BDW74C

BDW74C

  • 厂商:

    BOURNS(伯恩斯)

  • 封装:

  • 描述:

    BDW74C - PNP SILICON POWER DARLINGTONS - Bourns Electronic Solutions

  • 详情介绍
  • 数据手册
  • 价格&库存
BDW74C 数据手册
BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW73, BDW73A, BDW73B, BDW73C and BDW73D 80 W at 25°C Case Temperature B TO-220 PACKAGE (TOP VIEW) ● ● ● 1 2 3 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A C E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDW74 BDW74A Collector-base voltage (IE = 0) BDW74B BDW74C BDW74D BDW74 BDW74A Collector-emitter voltage (IB = 0) (see Note 1) BDW74B BDW74C BDW74D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. VEBO IC IB Ptot Ptot ½LIC2 Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -8 -0.3 80 2 75 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = - 20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS BDW74 V(BR)CEO Collector-emitter breakdown voltage BDW74A IC = -30 mA IB = 0 (see Note 5) BDW74B BDW74C BDW74D VCE = -30 V ICEO Collector-emitter cut-off current VCE = -30 V VCE = -40 V VCE = -50 V VCE = -60 V VCB = -45 V VCB = -60 V VCB = -80 V VCB = -100 V ICBO Collector cut-off current VCB = -120 V VCB = -45 V VCB = -60 V VCB = -80 V VCB = -100 V VCB = -120 V IEBO hFE VBE(on) VCE(sat) VEC Emitter cut-off current Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Parallel diode forward voltage VEB = VCE = VCE = VCE = IB = IB = IE = -5 V -3 V -3 V -3 V -12 mA -80 mA -8 A IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = -3 A IC = -8 A IC = -3 A IC = -3 A IC = -8 A IB = 0 (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 750 100 -2.5 -2.5 -4 -3.5 V V V TC = 150°C TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDW74 BDW74A BDW74B BDW74C BDW74D BDW74 BDW74A BDW74B BDW74C BDW74D BDW74 BDW74A BDW74B BDW74C BDW74D MIN -45 -60 -80 -100 -120 -0.5 -0.5 -0.5 -0.5 -0.5 -0.2 -0.2 -0.2 -0.2 -0.2 -5 -5 -5 -5 -5 -2 20000 mA mA mA V TYP MAX UNIT NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.56 62.5 UNIT °C/W °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER ton toff † TEST CONDITIONS IC = -3 A VBE(off) = 3.5 V IB(on) = -12 mA RL = 1 0 Ω † MIN IB(off) = 12 mA tp = 20 µs, dc ≤ 2% TYP 1 5 MAX UNIT µs µs Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 50000 TCS135AD COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -2·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 TCS135AB hFE - Typical DC Current Gain TC = -40°C TC = 25°C TC = 100°C 10000 -1·5 1000 -1·0 VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 -1·0 IC - Collector Current - A -10 TC = -40°C TC = 25°C TC = 100°C -0·5 -0·5 -1·0 IC - Collector Current - A -10 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -3·0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40°C TC = 25°C TC = 100°C TCS135AC -2·5 -2·0 -1·5 -1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 IC - Collector Current - A -10 Figure 3. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -10 SAS135AF IC - Collector Current - A -1·0 -0·1 BDW74 BDW74A BDW74B BDW74C BDW74D -0.01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 100 Ptot - Maximum Power Dissipation - W TIS130AA 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE 5 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP
BDW74C
### 物料型号 - BDW74, BDW74A, BDW74B, BDW74C, BDW74D

### 器件简介 - 这些是PNP硅功率达林顿晶体管,设计用于与BDW73系列互补使用。它们能够承受80W在25°C的壳温,连续集电极电流8A。

### 引脚分配 - Pin 2与安装底座电气接触。

### 参数特性 - 绝对最大额定值:包括集电极-基极电压(VCBO)从-45V到-120V不等,发射极-基极电压(VEBO)为-5V,连续集电极电流(Ic)为-8A,连续基极电流(IB)为-0.3A,总功耗(Ptot)为80W(在25°C壳温下)。 - 电气特性:在3V、3A条件下,最小电流增益(hFE)为750。还包括了不同集电极电流下的电压、电流和电流增益等参数。 - 热特性:结到壳热阻(ReJC)最小值为1.56°C/W,结到自由空气热阻(ReJA)最大值为62.5°C/W。 - 电阻负载开关特性:包括最小和典型开通时间(ton)和关断时间(toff)。

### 功能详解 - 这些晶体管适用于高功率应用,能够在较高的集电极电流和功耗下工作。它们具有较高的电流增益和能够在极端温度下工作的能力。

### 应用信息 - 产品信息部分提到了这些晶体管的规格可能会变更,且自1978年8月以来已修订至2002年9月。

### 封装信息 - 使用TO-220 3引脚塑料法兰安装封装。这种单列直插式封装包括一个电路安装在引线框架上,并被封装在塑料化合物内。该化合物能够承受焊接温度而不变形,在高湿度条件下运行时电路性能特性保持稳定。引脚在使用焊接组装时不需要额外的清洁或处理。
BDW74C 价格&库存

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