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BDW84D

BDW84D

  • 厂商:

    BOURNS(伯恩斯)

  • 封装:

  • 描述:

    BDW84D - PNP SILICON POWER DARLINGTONS - Bourns Electronic Solutions

  • 详情介绍
  • 数据手册
  • 价格&库存
BDW84D 数据手册
BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D 150 W at 25°C Case Temperature 15 A Continuous Collector Current C B SOT-93 PACKAGE (TOP VIEW) 1 ● ● ● 2 Minimum hFE of 750 at 3V, 6 A E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDW84 BDW84A Collector-base voltage (IE = 0) BDW84B BDW84C BDW84D BDW84 BDW84A Collector-emitter voltage (IB = 0) (see Note 1) BDW84B BDW84C BDW84D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. VEBO IC IB Ptot Ptot ½LIC2 Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -15 -0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = - 20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS BDW84 V(BR)CEO Collector-emitter breakdown voltage BDW84A IC = -30 mA IB = 0 (see Note 5) BDW84B BDW84C BDW84D VCE = -30 V ICEO Collector-emitter cut-off current VCE = -30 V VCE = -40 V VCE = -50 V VCE = -60 V VCB = -45 V VCB = -60 V VCB = -80 V VCB = -100 V ICBO Collector cut-off current VCB = -120 V VCB = -45 V VCB = -60 V VCB = -80 V VCB = -100 V VCB = -120 V IEBO hFE VBE(on) VCE(sat) VEC Emitter cut-off current Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Parallel diode forward voltage VEB = VCE = VCE = VCE = IB = -5 V -3 V -3 V -3 V -12 mA IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = -6 A IC = -15 A IC = -6 A IC = -6 A IC = -15 A IB = 0 (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 750 100 -2.5 -2.5 -4 -3.5 V V V TC = 150°C TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D MIN -45 -60 -80 -100 -120 -1 -1 -1 -1 -1 -0.5 -0.5 -0.5 -0.5 -0.5 -5 -5 -5 -5 -5 -2 20000 mA mA mA V TYP MAX UNIT IB = -150 mA IE = -15 A NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 0.83 35.7 UNIT °C/W °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER ton toff † TEST CONDITIONS IC = -10 A VBE(off) = 4.2 V IB(on) = -40 mA RL = 3 Ω † MIN IB(off) = 40 mA tp = 20 µs, dc ≤ 2% TYP 0.9 7 MAX UNIT µs µs Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 10000 TCS145AG COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 -1·5 TCS145AH hFE - Typical DC Current Gain TC = -40°C TC = 25°C TC = 100°C 1000 -1·0 -0·5 TC = -40°C TC = 25°C TC = 100°C 0 -0·5 -1·0 IC - Collector Current - A -10 -20 VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 -1·0 IC - Collector Current - A -10 -20 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -3·0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40°C TC = 25°C -2·5 TC = 100°C TCS145AI -2·0 -1·0 -1·5 -0·5 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0 -0·5 -1·0 IC - Collector Current - A -10 -20 Figure 3. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -100 SAS145AB IC - Collector Current - A -10 -1·0 BDW84 BDW84A BDW84B BDW84C BDW84D -0·1 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 160 Ptot - Maximum Power Dissipation - W 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C TIS140AB Figure 5. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 4,1 4,0 15,2 14,7 1,37 1,17 3,95 4,15 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 1,30 1,10 2 3 0,78 0,50 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW 5 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP
BDW84D
物料型号: - BDW84, BDW84A, BDW84B, BDW84C, BDW84D

器件简介: - 这些是PNP型硅功率达林顿晶体管,由BoURNS生产,设计用于与BDW83系列互补使用。它们能在25°C的壳温下承受150W的功率,并且具有15A的连续集电极电流和最小hFE为750(在3V、6A条件下)。

引脚分配: - Pin 2与安装底座电气连接。

参数特性: - 绝对最大额定值(在25°C壳温下,除非另有说明): - 集电极-基极电压(Ice=0):BDW84为-45V,BDW84A为-60V,BDW84B为-80V,BDW84C为-100V,BDW84D为-120V。 - 集电极-发射极电压(Ic=0):BDW84为-45V,BDW84A为-60V,BDW84B为-80V,BDW84C为-100V,BDW84D为-120V。 - 发射极-基极电压:-5V。 - 连续集电极电流:-15A。 - 连续基极电流:-0.5A。 - 25°C壳温下的连续器件耗散功率:150W。 - 25°C自由空气温度下的连续器件耗散功率:3.5W。 - 未钳位感性负载能量:100mJ。 - 工作结温范围:-65至+150°C。 - 存储温度范围:-65至+150°C。 - 工作自由空气温度范围:-65至+150°C。

功能详解: - 这些晶体管具有高电流增益和高电压承受能力,适用于高功率开关和放大应用。

应用信息: - 产品信息显示这些晶体管自1978年8月开始生产,并于2002年9月修订。规格如有变更,恕不另行通知。

封装信息: - 使用SOT-93 3引脚塑料翼型安装封装。这种单列封装由电路安装在引线框架上并封装在塑料化合物内组成。该化合物能承受焊接温度而不变形,在高湿度条件下运行时电路性能特性保持稳定。引脚在使用焊接组装时不需要额外清洁或处理。
BDW84D 价格&库存

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