BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS
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Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C 80 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 750 at 3V, 5 A
B C E
TO-220 PACKAGE (TOP VIEW)
1 2 3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING BDW94 Collector-base voltage (IE = 0) BDW94A BDW94B BDW94C BDW94 Collector-emitter voltage (IB = 0) BDW94A BDW94B BDW94C Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Operating junction temperature range Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -12 -0.3 80 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT
SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BDW94 V(BR)CEO IC = -100 mA IB = 0 (see Note 3) BDW94A BDW94B BDW94C VCB = -40 V ICEO Collector-emitter cut-off current VCB = -60 V VCB = -80 V VCB = -80 V VCB = -45 V VCB = -60 V VCB = -80 V ICBO Collector cut-off current VCB = -100 V VCB = -45 V VCB = -60 V VCB = -80 V VCB = -100 V IEBO Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Parallel diode forward voltage VEB = VCE = VCE = VCE = IB = IB = IE = IE = -5 V -3 V -3 V -3 V -20 mA -20 mA -5 A -10 A IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = IC = IC = IC = IB = 0 IB = 0 -3 A (see Notes 3 and 4) -5 A -5 A -5 A (see Notes 3 and 4) (see Notes 3 and 4) 1000 100 750 20000 -2 -3 -2.5 -4 -2 -4 V V V TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDW94 BDW94A BDW94B BDW94C BDW94 BDW94A BDW94B BDW94C BDW94 BDW94A BDW94B BDW94C MIN -45 -60 -80 -100 -1 -1 -1 -1 -0.1 -0.1 -0.1 -0.1 -5 -5 -5 -5 -2 mA mA mA V TYP MAX UNIT
hFE
IC = -10 A
VCE(sat) VBE(sat) VEC
IB = -100 mA IB = -100 mA
IC = -10 A IC = -10 A
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.56 62.5 UNIT °C/W °C/W
2
SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 50000
TCS135AE
COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
-3·0
TCS135AG
hFE - Typical DC Current Gain
TC = -40°C TC = 25°C TC = 100°C 10000
TC = -40°C TC = 25°C -2·5 TC = 100°C
-2·0
-1·5
1000
-1·0
VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 -1·0 IC - Collector Current - A -10 -20
-0·5 tp = 300 µs, duty cycle < 2% IB = IC / 100 0 -0·5 -1·0 IC - Collector Current - A -10 -20
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
-3·0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40°C TC = 25°C TC = 100°C
TCS135AI
-2·5
-2·0
-1·5
-1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 IC - Collector Current - A -10 -20
Figure 3.
SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
100 Ptot - Maximum Power Dissipation - W
TIS130AA
80
60
40
20
0 0 25 50 75 100 125 150 TC - Case Temperature - °C
Figure 4.
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SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS
MECHANICAL DATA TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20
ø
3,96 3,71
10,4 10,0
2,95 2,54 6,6 6,0 15,90 14,55
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
2,74 2,34 5,28 4,88 2,90 2,40
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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