BIDD05N60T

T 60 5N D0 K 0 2 Features Applications ■ 600V, 5A, Low VCE(sat) ■ Switch-Mode Power Supplies (SMPS) ■ Novel field stop technology ■ Uninterruptible Power Sources (UPS) ■ Optimized for conduction ■ Power Factor Correction (PFC) ■ Robust ■ RoHS compliant* BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) General Information Additional Information Click these links for more information: ® The Bourns Model BIDD05N60T IGBT device combines technology from a MOS gate and a bipolar transistor, resulting in an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics while resulting in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure increases the robustness of the device. PRODUCT TECHNICAL INVENTORY SAMPLES SELECTOR LIBRARY CONTACT Maximum Electrical Ratings (TC = 25 °C, unless otherwise specified) Parameter Collector-Emitter Voltage Symbol Value Unit VCES 600 V Continuous Collector Current (TC = 25 °C), limited by Tjmax IC 10 A Continuous Collector Current (TC = 100 °C), limited by Tjmax IC 5 A Pulsed Collector Current, tp limited by Tjmax ICP 15 A Gate-Emitter Voltage VGE ±30 V IF 10 A Short-circuit Withstand Time (VCE = 300 V, VGE = 15 V) TSC 10 μs Total Power Dissipation Ptotal 82 W Storage Temperature TSTG -55 to +150 °C Tj -55 to +150 °C Symbol Max Unit IGBT Thermal Resistance Junction - Case Rth(j-c)_IGBT 1.51 °C/W Diode Thermal Resistance Junction - Case Rth(j-c)_Diode 2.14 °C/W Continuous Forward Current (TC = 25 °C), limited by Tjmax Operating Junction Temperature Thermal Resistance Parameter Typical Part Marking Internal Circuit 2 2 MFR’S TRADEMARK D05N60T YYYYYYY *1 DEVICE CODE 1 LOT ID: 1ST CHARACTER INDICATES PRODUCTION LINE 2ND CHARACTER INDICATES GRADE 3RD CHARACTER INDICATES YEAR OF MANUFACTURE 4TH CHARACTER INDICATES MONTH OF MANUFACTURE 5TH, 6TH & 7TH CHARACTERS INDICATE SERIAL NO. (7TH CHARACTER COULD BE OMITTED) *1 – BUILT-IN FRD 3 1 WARNING Cancer and Reproductive Harm www.P65Warnings.ca.gov 1 – GATE 2 – COLLECTOR 3 – EMITTER 3 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) Static Electrical Characteristics (TC = 25 °C, Unless Otherwise Specified) Value Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Diode Forward On-Voltage Gate Threshold Voltage Symbol BVCES VCE(sat) VF VGE(th) Conditions Unit Min. Typ. Max. VGE = 0 V, IC = 250 μA 600 — — VGE = 15 V, IC = 5 A TC= 25 °C — 1.5 2.0 VGE = 15 V, IC = 5 A TC= 125 °C — 1.7 — IF = 5 A, TC = 25 °C — 1.3 1.8 V IF = 5 A, TC = 125 °C — 1.1 — V VCE = VGE, IC = 250 μA 3.5 5.5 6.5 V V V Collector Cut-off Current ICES VGE = 0 V, VCE = 600 V — — 200 μA Gate-Emitter Leakage Current IGES VCE = 0 V, VGE = ± 20 V — — ±400 nA Dynamic Electrical Characteristics (TC = 25 °C, Unless Otherwise Specified) Value Parameter Input Capacitance Symbol Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge Conditions VCE = 30 V, VGE = 0 V, f = 1 MHz Qg Gate-Emitter Charge Qge Gate-Collector Charge Qgc VCE = 400 V, VGE = 15 V IC = 5.0 A Unit Min. Typ. Max. — 340 — — 26 — — 7.6 — — 18.5 — — 5.1 — — 8.6 — pF nC IGBT Switching Characteristics (Inductive Load, TC = 25 °C, unless otherwise specified) Value Parameter (TC = 25 °C) Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Symbol Conditions Unit Min. Typ. Max. td(on) — 7 — ns tr — 14 — ns td(off) tf VCE = 400 V, VGE = 15 V IC = 5.0 A, RG = 10 Ω — 18 — ns — 145 — ns Turn-on Switching Energy Eon — 0.2 — mJ Turn-off Switching Energy Eoff — 0.07 — mJ Total Switching Energy Ets — 0.27 — mJ Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) Diode Switching Characteristics (TC = 25 °C, unless otherwise specified) Value Parameter (TC = 25 °C) Symbol Conditions Unit Min. Reverse Recovery Time trr Reverse Recovery Charge Qrr dlF/dt = 200 A/μs IF = 5.0 A Typ. Max. — 40 — ns — 80 — nC Electrical Characteristic Performance Typical Output Characteristics Forward Bias Safe Operating Area 40 30 15 V Collector Current – IC (A) Collector Current – IC (A) 102 17 V Common Emitter TC = 25 °C 13 V 20 11 V 10 101 100 10 100 0 1 2 3 4 5 6 7 8 9 10 100 Collector-emitter Voltage – VCE (V) 102 103 Typical Transfer Characteristics 30 20 Common Emitter VGE = 15 V Common Emitter VCE = 10 V 25 Collector Current – IC (A) 16 Collector Current – IC (A) 101 Collector-emitter Voltage – VCE (V) Typical Saturation Voltage Characteristics TC = 25 °C 12 TC = 125 °C 8 4 0 1m s ms Note: TC = 25 °C 10-2 11 µs 10-1 VGE = 9 V 0 10 µs TC = 25 °C 20 15 TC = 125 °C 10 5 0 1 2 3 Collector-emitter Voltage – VCE (V) 4 0 0 5 10 15 Gate-emitter Voltage – VGE (V) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) Electrical Characteristic Performance (continued) Typical VCE(sat) vs VGE @ TC = 25 °C 15 Common Emitter TC = 25 °C Collector-emitter Voltage – VCE(sat) (V) Collector-emitter Voltage – VCE(sat) (V) 15 Typical VCE(sat) vs VGE @ TC = 125 °C IC = 2.5 A IC = 5 A IC = 10 A 10 5 0 Common Emitter TC = 125 °C IC = 2.5 A IC = 5 A IC = 10 A 10 5 0 4 8 12 16 20 4 8 Gate-emitter Voltage – VGE (V) Typical VCE(sat) vs Case Temperature 16 20 Typical Capacitance Characteristics 700 Common Emitter VGE = 15 V Common Emitter VGE = 0 V, f = 1 MHz TC = 25 °C 600 2.5 Cies 500 10 A Capacitance (pF) Collector-emitter Voltage – VCE(sat) (V) 3.0 12 Gate-emitter Voltage – VGE (V) 2.0 5A 400 300 Coes 200 1.5 IC = 2.5 A Cres 100 1.0 0 25 50 75 Case Temperature – TC (°C) 100 125 1 10 100 Collector-emitter Voltage – VCE (V) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) Electrical Characteristic Performance (continued) Typical Gate Charge Characteristic 1000 Common Emitter TC = 25 °C Common Emitter VCC = 400 V, VGE = 15 V RG = 10 Ω, TC = 25 °C 12 tf Switching Time (ns) Gate-emitter Voltage – VGE (V) 15 Typical Switching Time Characteristics vs IC 9 6 100 t d(off) 10 VCC = 100 V VCC = 200 V VCC = 300 V 3 td(on) 0 0 10 1 20 0 2 Gate Charge – Qg (nC) 6 8 10 Typical Switching Loss vs RG 1000 1000 Common Emitter VCC = 400 V, VGE = 15 V IC = 5 A, TC = 25 °C Common Emitter VCC = 400 V, VGE = 15 V IC = 5 A, TC = 25 °C tf Switching Loss (µJ) Switching Time (ns) 4 Collector Current – IC (A) Typical Switching Time Characteristics vs RG 100 td(off) tr 10 tr E(on) 100 E(off) td(on) 10 1 0 10 20 30 Gate Resistance – RG (Ω) 40 50 0 10 20 30 40 50 Gate Resistance – RG (Ω) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) Electrical Characteristic Performance (continued) Typical Switching Loss Characteristics vs IC Typical Diode IF vs VF 10 10000 Forward Current – IF (A) Switching Loss (µJ) Common Emitter VCC = 400 V, VGE = 15 V RG = 10 Ω, TC = 25 °C 1000 E(on) E(off) 100 Tc = 125 °C Tc = 25 °C 1 10 0 2 4 6 8 0 10 0.5 1.0 Typical Reverse Recovery Time vs IF 2.0 2.5 Typical Reverse Recovery Charge vs IF 120 Reverse Recovery Charge – Qrr (nC) 60 Reverse Recovery Time – trr (ns) 1.5 Forward Voltage – VF (V) Collector Current – IC (A) 50 di/dt = 100 A/µs 40 di/dt = 200 A/µs 30 20 100 di/dt = 200 A/µs 80 60 di/dt = 100 A/µs 40 20 0 3 4 5 6 7 Forward Current – IF (A) 8 9 10 3 4 5 6 7 8 9 10 Forward Current – IF (A) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) Electrical Characteristic Performance (continued) IGBT Transient Thermal Impedance vs tp(on) Duration (D=tp/T) Transient Thermal Impedance - ZthJC (°C/W) 101 100 50 % 10 % 10-1 5% 1% 10-2 Single Pulse 10-3 10-6 10-5 10-4 10-3 10-2 10-1 10-2 10-1 tp, Pulse Duration (s) Diode Transient Thermal Impedance vs tp(on) Duration (D=tp/T) Transient Thermal Impedance - ZthJC (°C/W) 101 50 % 100 10 % 10-1 5% 1% 10-2 Single Pulse 10-3 10-6 10-5 10-4 10-3 tp, Pulse Duration (s) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) Inductive Load Test Circuit How to Order B I D D 05 N 60 T B = Bourns® D I = IGBT L Type D = Discrete Packaging Code D = TO-252 (DPAK) IC VCE RG VCC Current Rating 05 = 5 A Device Type N = N-channel D.U.T. Nominal Voltage (divided by 10) 60 = 600 V VGE Optimization T = Medium Speed Environmental Characteristics L = 11.2 mH, VCE = 400 V, VGE = 15 V, IC = 5 A, RG = 10 Ω Moisture Sensitivity Level ...........................................................3 ESD Class (HBM) .................................................................... 1B Product Dimensions E A b1 c1 H Symbol Min. Nom. Max. A 2.10 (.083) 2.30 (.091) 2.50 (.098) A1 0 — 0.127 (.005) b 0.66 (.026) 0.76 (.030) 0.89 (.035) b1 5.10 (.201) 5.33 (.210) 5.46 (.215) c 0.45 (.018) — 0.65 (.026) c1 0.45 (.018) — 0.65 (.026) D 5.80 (.228) 6.10 (.240) 6.40 (.252) E 6.30 (.248) 6.60 (.260) 6.90 (.272) D A1 L1 L2 e L b DIMENSIONS: c MM (INCHES) 2.30 TYP (.091) e Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. H 9.60 (.378) 10.10 (.398) 10.60 (.417) L 1.40 (.055) 1.50 (.059) 1.70 (.067) 2.90 REF (.114) L1 L2 0.60 (.024) 0.80 (.031) 1.00 (.039) BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) Packaging Specifications 16.5 ± 0.2 (.650 ± .008) 332 (13.071) MAX. 2.0 ± 0.2 (.079 ± .008) 1.75 ± 0.1 (.069 ± .004) 4.0 ± 0.2 (.157 ± .008) 8.0 ± 0.2 (.315 ± .008) 1.5 DIA. MIN. (.059) 0.3 ± 0.05 (.012 ± .002) 7.5 ± 0.1 (.295 ± .004) 16 ± 0.3 (.630 ± .012) 1.5 (.059) DIA. MIN. 2.7 ± 0.2 (.106 ± .008) 6.9 ± 0.2 (.272 ± .008) DIMENSIONS: MM (INCHES) 10.5 ± 0.3 (.413 ± .012) USER DIRECTION OF FEED QTY: 2500 PCS PER REEL Asia-Pacific: Tel: +886-2 2562-4117 • Email: asiacus@bourns.com EMEA: Tel: +36 88 885 877 • Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 • Email: americus@bourns.com www.bourns.com REV. 07/22 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Legal Disclaimer Notice This legal disclaimer applies to purchasers and users of Bourns® products manufactured by or on behalf of Bourns, Inc. and P[ZHɉSPH[LZJVSSLJ[P]LS`¸)V\YUZ¹ Unless otherwise expressly indicated in writing, Bourns® products and data sheets relating thereto are subject to change ^P[OV\[UV[PJL