BUT11-S

BUT11 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature TO-220 PACKAGE (TOP VIEW) 5 A Continuous Collector Current This series isOBSOLETEAND not recommended for new designs. B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current SYMBOL VALUE UNIT VCBO 850 V VCES E T E L O S B O Peak collector current (see Note 1) V CEO VEBO IC ICM Continuous device dissipation at (or below) 25°C case temperature Ptot Storage temperature range Tstg Operating junction temperature range NOTE Tj 850 400 V V 10 V 10 A 5 100 -65 to +150 -65 to +150 A W °C °C 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BUT11 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE V CE(sat) VBE(sat) ft Cob Collector-emitter sustaining voltage TEST CONDITIONS IC = 0.1 A L = 25 mH Collector-emitter VCE = 850 V VBE = 0 cut-off current VCE = 850 V VBE = 0 VEB = 10 V IC = 0 VCE = 5V Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance MIN (see Note 2) TYP MAX 400 V 50 TC = 125°C 500 1 IC = 0.5 A (see Notes 3 and 4) UNIT 20 µA mA 60 IB = 0.6 A IC = 3A (see Notes 3 and 4) 1.5 V IB = 0.6 A IC = 3A (see Notes 3 and 4) 1.3 V VCE = 10 V IC = 0.5 A f= 1 MHz 12 MHz VCB = 20 V IE = 0 f = 0.1 MHz 110 pF NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics E T E L O S B O PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 1.25 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER † tsv Voltage storage time tfi Current fall time tsv Voltage storage time tfi Current fall time TEST CONDITIONS † IC = 3 A IB(on) = 0.6A VCC = 50 V (see Figures 1 and 2) IC = 3 A IB(on) = 0.6A VCC = 50 V TC = 100°C MIN VBE(off) = -5 V VBE(off) = -5 V MAX UNIT 1.4 µs 150 ns 1.5 µs 300 ns Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUT11 NPN SILICON POWER TRANSISTOR PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 33 Ω BY205-400 RB (on) 1 pF 180 µH V Gen 1 kΩ 68 Ω 0.02 µF vcc 2N2222 BY205-400 Vclamp = 400 V TUT 1 kΩ +5V 270 Ω E T E L O S B O BY205-400 5X BY205-400 1 kΩ 2N2904 Adjust pw to obtain IC D44H11 47 Ω For IC < 6 A VCC = 50 V For IC ≥ 6 A VCC = 100 V V 100 Ω BE(off) Figure 1. Inductive-Load Switching Test Circuit I B(on) A - B = tsv B - C = trv D - E = tfi E - F = tti A (90%) IB Base Current C B - E = txo V CE B 90% 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms
  
 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BUT11 NPN SILICON POWER TRANSISTOR MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAP791AB 10 1·0 0.1 tp = 10 µs tp = 100 µs 1 ms tp = tp = 10 ms DC Operation E T E L O S B O 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 3.
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 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.