BUV47A

BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● ● ● Rugged Triple-Diffused Planar Construction 9 A Continuous Collector Current 1000 Volt Blocking Capability B SOT-93 PACKAGE (TOP VIEW) 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-emitter voltage (VBE = -2.5 V) Collector-emitter voltage (RBE = 10 Ω) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 5 ms, duty cycle ≤ 2%. BUV47 BUV47A BUV47 BUV47A BUV47 BUV47A SYMBOL VCEX VCER VCEO IC ICM IB IBM Ptot Tj Tstg VALUE 850 1000 850 1000 400 450 9 15 3 6 120 -65 to +150 -65 to +150 UNIT V V V A A A A W °C °C AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BUV47, BUV47A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) V(BR)EBO Collector-emitter sustaining voltage Base-emitter breakdown voltage Collector-emitter cut-off current IC = 200 mA IE = 50 mA TEST CONDITIONS L = 25 mH IC = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 RBE = 10 Ω RBE = 10 Ω RBE = 10 Ω RBE = 10 Ω IC = 0 IC = IC = IC = IC = IC = 0 5A 8A 5A 0.5 A (see Notes 3 and 4) (see Notes 3 and 4) f= 1 MHz 8 105 TC = 125°C TC = 125°C TC = 125°C TC = 125°C (see Note 2) (see Note 3) BUV47 BUV47A BUV47 BUV47A BUV47 BUV47A BUV47 BUV47A BUV47 BUV47A MIN 400 450 7 30 0.15 0.15 1.5 1.5 0.4 0.4 3.0 3.0 1 1.5 3.0 1.6 mA V V MHz pF mA mA TYP MAX UNIT V V VCE = 850 V ICES VCE = 1000 V VCE = 850 V VCE = 1000 V VCE = 850 V ICER Collector-emitter cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance VCE = 1000 V VCE = 850 V VCE = 1000 V IEBO VCE(sat) VBE(sat) ft Cob VEB = IB = IB = IB = VCE = VCB = 5V 1A 2.5 A 1A 10 V 20 V f = 0.1 MHz NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC Junction to case thermal resistance MIN TYP MAX 1 UNIT °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER ton ts tf † TEST CONDITIONS IC = 5 A VCC = 150 V IB(on) = 1 A † MIN IB(off) = -1 A TYP MAX 1.0 3.0 0.8 UNIT µs µs µs Turn on time Storage time Fall time (see Figures 1 and 2) Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER tsv tfi Voltage storage time Current fall time IC = 5 A TC = 100°C TEST CONDITIONS IB(on) = 1 A (see Figures 3 and 4) † MIN VBE(off) = -5 V TYP MAX 4.0 0.4 UNIT µs µs 2 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BUV47, BUV47A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION +25 V BD135 120 Ω 680 µF 100 Ω V cc V= 250 V CC T V1 tp 47 Ω 100 µF TUT 15 Ω V1 100 Ω BD136 82 Ω 680 µF tp = 20 µs Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Ω Figure 1. Resistive-Load Switching Test Circuit C IC A - B = td B - C = tr E - F = tf D - E = ts A - C = ton D - F = t off B 90% 90% E 10% 10% F 0% 90% IB D dIB ≥ 2 A/µ s dt I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BUV47, BUV47A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 BY205-400 33 Ω 1 pF RB (on) 180 µ H vcc V Gen 68 Ω 1 kΩ 0.02 µ F +5V 1 kΩ 2N2222 TUT BY205-400 Vclamp = 400 V 270 Ω BY205-400 1 kΩ 2N2904 5X BY205-400 Adjust pw to obtain IC 47 Ω For IC < 6 A For IC ≥ 6 A VCC = 50 V VCC = 100 V 100 Ω D44H11 V BE(off) Figure 3. Inductive-Load Switching Test Circuit I B(on) A - B = tsv B - C = trv D - E = tfi E - F = tti B - E = txo IB A (90%) Base Current C 90% V CE B 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF. B. Resistors must be noninductive types. Figure 4. Inductive-Load Switching Waveforms 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BUV47, BUV47A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 100 VCE = 5 V TCP762AA COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 5·0 TCP762AB hFE - Typical DC Current Gain TC = 125°C TC = 25°C TC = -65°C 4·0 TC = 25°C IC = 8 A IC = 6 A IC = 4 A IC = 2 A 3·0 10 2·0 1·0 1·0 0·1 0 1·0 IC - Collector Current - A 10 0 0·5 1·0 1·5 2·0 2·5 IB - Base Current - A Figure 5. Figure 6. COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 0·5 TCP762AK COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE 10 TCP762AC 0·4 ICES - Collector Cut-off Current - µA TC = 100°C IC = 8 A IC = 6 A IC = 4 A IC = 2 A 1·0 BUV47A VCE = 1000 V 0·1 BUV47 VCE = 850 V 0·01 0·3 0·2 0·1 0 0 0·5 1·0 1·5 2·0 2·5 IB - Base Current - A 0·001 -80 -60 -40 -20 0 20 40 60 80 100 120 140 TC - Case Temperature - °C Figure 7. Figure 8. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5 BUV47, BUV47A NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAP762AA IC - Collector Current - A 10 1·0 0.1 tp = 100 µ s 1 ms tp = tp = 10 ms DC Operation 10 BUV47 BUV47A 100 1000 0·01 1·0 VCE - Collector-Emitter Voltage - V Figure 9. THERMAL INFORMATION THERMAL RESPONSE JUNCTION TO CASE vs POWER PULSE DURATION 1·0 50% 20% 0·1 10% 5% 2% 1% 0·01 0% t1 ZθJC / Rθ JC - Normalised Transient Thermal Impedance TCP762AD duty cycle = t1/t2 Read time at end of t1, TJ(max) - TC = PD(peak) · 10-4 10-3 ZθJC Rθ JC t2 () 10-2 · R θJC(max) 10-1 0·001 10-5 t1 - Power Pulse Duration -s Figure 10. 6 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BUV47, BUV47A NPN SILICON POWER TRANSISTORS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 4,1 4,0 15,2 14,7 1,37 1,17 3,95 4,15 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 1,30 1,10 2 3 0,78 0,50 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 7