BUX84-S

BUX84 NPN SILICON POWER TRANSISTOR 40 W at 25°C Case Temperature TO-220 PACKAGE (TOP VIEW) 2 A Continuous Collector Current 3 A Peak Collector Current B 1 Typical tf = 200 ns at 25°C C 2 E 3 This series is obsolete and not recommended for new designs. Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Continuous collector current SYMBOL VALUE UNIT VCBO 800 V 400 V VCES E T E L O S B O Peak collector current (see Note 1) V CEO IC ICM Continuous device dissipation at (or below) 25°C case temperature Ptot Storage temperature range Tstg Operating junction temperature range NOTE Tj 800 2 3 40 -65 to +150 -65 to +150 V A A W °C °C 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BUX84 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE V CE(sat) VBE(sat) ft Cob NOTES: 2. 3. 4. 5. Collector-emitter sustaining voltage TEST CONDITIONS IC = 0.1 A L = 25 mH Collector-emitter VCE = 800 V VBE = 0 cut-off current VCE = 800 V VBE = 0 VEB = 5V IC = 0 VCE = 5V IC = 0.1 A IC = 0.3 A Emitter cut-off current Forward current transfer ratio IB = 0.03 A saturation voltage IB = 0.2 A IC = 1A IB = 0.2 A IC = 1A VCE = 10 V IC = 0.2 A VCB = 20 V IE = 0 saturation voltage Current gain bandwidth product Output capacitance (see Note 2) MAX 400 V 0.2 TC = 125°C 1 (see Notes 3 and 4) UNIT mA mA 35 0.8 (see Notes 3 and 4) 1 (see Notes 3 and 4) 1.1 f = 0.1 MHz V V 12 MHz 60 pF Inductive loop switching measurement. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1. thermal characteristics E T E L O S B O PARAMETER RθJC TYP 1 Collector-emitter Base-emitter MIN MIN TYP Junction to case thermal resistance MAX UNIT 2.5 °C/W resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER ton Turn on time ts Storage time tf Fall time tf † Fall time TEST CONDITIONS † IC = 1 A IB(on) = 0.2 A VCC = 250 V (see Figures 1 and 2) IC = 1 A IB(on) = 0.2 A VCC = 250 V TC = 95°C MIN IB(off) = -0.4 A IB(off) = -0.4 A MAX 0.25 0.5 UNIT µs 1.8 µs 0.2 µs 0.4 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUX84 NPN SILICON POWER TRANSISTOR PARAMETER MEASUREMENT INFORMATION +25 V BD135 680 µF 120 Ω T V1 100 Ω 100 µF 47 Ω tp V cc = 250 V TUT 15 Ω V1 100 Ω 680 µF 82 Ω BD136 tp = 20 µs Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Ω Figure 1. Resistive-Load Switching Test Circuit E T E L O S B O C 90% 90% E IC A - B = td B - C = tr E - F = tf D - E = ts A - C = ton D - F = t off B 10% 10% 90% D F 0% dIB ≥ 2 A/µs dt IB I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms
  
 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BUX84 NPN SILICON POWER TRANSISTOR TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE TCP741AJ 100 10 ICES - Collector Cut-off Current - µA hFE - Typical DC Current Gain VCE = 5 V TC = 25°C 10 1·0 0·1 TCP741AK VCE = 800 V VBE = 0 1·0 0·1 0·01 E T E L O S B O 1·0 5·0 0·001 -60 -30 IC - Collector Current - A 0 30 60 90 120 150 TC - Case Temperature - °C Figure 3. Figure 4. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAP770AB 1·0 0·1 0.01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 5.
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 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUX84 NPN SILICON POWER TRANSISTOR ZθJC / RθJC - Normalised Transient Thermal Impedance THERMAL INFORMATION THERMAL RESPONSE JUNCTION TO CASE vs POWER PULSE DURATION TCP741AL 1·0 50% 20% 10% 0·1 5% duty cycle = t1/t2 Read time at end of t1, t1 t2 E T E L O S B O TJ(max) - TC = PD(peak) · 0·01 10-5 10-4 10-3 ( ) 10-2 ZθJC RθJC · R θJC(max) 10-1 100 t1 - Power Pulse Duration - s Figure 6.
  
 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5