BUX84

BUX84 NPN SILICON POWER TRANSISTOR ● ● ● ● ● 40 W at 25°C Case Temperature 2 A Continuous Collector Current 3 A Peak Collector Current Typical tf = 200 ns at 25°C B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. SYMBOL VCBO VCES V CEO IC ICM Ptot Tj Tstg VALUE 800 800 400 2 3 40 -65 to +150 -65 to +150 UNIT V V V A A W °C °C AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BUX84 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE VCE(sat) VBE(sat) ft Cob NOTES: 2. 3. 4. 5. Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance IC = 0.1 A TEST CONDITIONS L = 25 mH VBE = 0 VBE = 0 IC = 0 IC = 0.1 A IC = 0.3 A IC = IC = 1A 1A (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) 12 f = 0.1 MHz 60 35 0.8 1 1.1 V V MHz pF TC = 125°C (see Note 2) MIN 400 0.2 1 1 TYP MAX UNIT V mA mA VCE = 800 V VCE = 800 V VEB = VCE = IB = IB = IB = VCE = VCB = 5V 5V 0.03 A 0.2 A 0.2 A 10 V 20 V IC = 0.2 A IE = 0 Inductive loop switching measurement. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [h ] = 1. FE thermal characteristics PARAMETER RθJC Junction to case thermal resistance MIN TYP MAX 2.5 UNIT °C/W resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER ton ts tf tf † TEST CONDITIONS IC = 1 A VCC = 250 V IC = 1 A VCC = 250 V IB(on) = 0.2 A † MIN IB(off) = -0.4 A TYP 0.25 1.8 0.2 MAX 0.5 UNIT µs µs µs Turn on time Storage time Fall time Fall time (see Figures 1 and 2) IB(on) = 0.2 A TC = 95°C IB(off) = -0.4 A 0.4 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BUX84 NPN SILICON POWER TRANSISTOR PARAMETER MEASUREMENT INFORMATION +25 V BD135 120 Ω 680 µF 100 Ω T V1 tp 47 Ω 100 µF V cc = 250 V TUT 15 Ω V1 100 Ω BD136 82 Ω 680 µF tp = 20 µs Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Ω Figure 1. Resistive-Load Switching Test Circuit C IC A - B = td B - C = tr E - F = tf D - E = ts A - C = ton D - F = t off B 90% 90% E 10% 10% F 0% 90% IB D dIB ≥ 2 A/µ s dt I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BUX84 NPN SILICON POWER TRANSISTOR TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 100 TCP741AJ COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE 10 TCP741AK ICES - Collector Cut-off Current - µA VCE = 5 V TC = 25°C hFE - Typical DC Current Gain VCE = 800 V VBE = 0 1·0 10 0·1 0·01 1·0 0·1 1·0 IC - Collector Current - A 5·0 0·001 -60 -30 0 30 60 90 120 150 TC - Case Temperature - °C Figure 3. Figure 4. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 SAP770AB IC - Collector Current - A 1·0 0·1 0.01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 5. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BUX84 NPN SILICON POWER TRANSISTOR THERMAL INFORMATION THERMAL RESPONSE JUNCTION TO CASE vs POWER PULSE DURATION 1·0 50% TCP741AL ZθJC / Rθ JC - Normalised Transient Thermal Impedance 20% 10% 0·1 5% duty cycle = t1/t2 Read time at end of t1, TJ(max) - TC = PD(peak) · 0·01 10-5 10-4 10-3 t1 t2 () ZθJC Rθ JC · R θJC(max) 100 10-2 10-1 t1 - Power Pulse Duration - s Figure 6. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5 BUX84 NPN SILICON POWER TRANSISTOR MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE 6 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP