CD214A-B130LLF

oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features ■ ■ ■ ■ ■ Lead free versions available RoHS compliant (lead free version)* SMA package Surface mount Very low forward voltage drop *R CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AC (SMA) size format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 100 V. Bourns® Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration makes roll away much more difficult. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol B120 B130 B130L B140 CD214B150 B160 B170 B180 B190 B1100 Unit Forward Voltage (Max.) (If = 1 A) Typical Junction Capacitance* Reverse Current (Max.) at Rated VR) VF CT IR 0.5 110 500 0.5 110 500 0.41 100 1000 0.5 110 500 0.7 110 500 0.7 110 500 0.79 30 500 0.79 30 500 0.79 30 500 0.79 30 500 V pF µA * Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol B120 B130 B130L B140 CD214B150 B160 B170 B180 B190 B1100 Unit Repetitive Peak Reverse Voltage Reverse Voltage Maximum RMS Voltage Avg. Forward Current Forward Current, Surge Peak (60 Hz, 1 cycle) Typical Thermal Resistance** Storage Temperature Junction Temperature VRRM VR VRMS IO Isurge RθJL TSTG TJ 20 20 14 30 30 21 30 30 21 40 40 28 50 50 35 1 60 60 42 70 70 49 80 80 56 90 90 63 100 100 70 V V V A 30 20 30 20 25 35 30 20 30 20 30 20 30 25 30 25 30 25 30 25 A °C/W °C °C -55 to +150 -55 to +125 How To Order ** Thermal resistance junction to lead. CD 214A - B 1 30 L __ Reliable Electronic Solutions Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 Europe: Tel: +41-41 768 5555 • Fax: +41-41 768 5510 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Common Code Chip Diode Package • 214A = SMA/DO-214AC Model B = Schottky Barrier Series Average Forward Current (Io) Code 1 = 1 A (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 30 = 30 V 40 = 40 V 100 = 100 V Forward Voltage Suffix L = Low Forward Voltage Vf (CD214-B130L) Terminations LF = 100 % Sn (lead free) Blank = Sn/Pb CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Product Dimensions A Recommended Pad Layout A B C B C G Dimension A (Max.) H F E D B (Min.) C (Min.) Dimension A B C D E F G H SMA (DO-214AC) 4.06 - 4.57 (0.160 - 0.180) 2.29 - 2.92 (0.090 - 0.115) 1.27 - 1.63 (0.050 - 0.064) 0.15 - 0.31 (0.006 - 0.110) 4.83 - 5.59 (0.190 - 0.220) 0.05 - 0.20 (0.002 - 0.008) 2.01 - 2.62 (0.080 - 0.103) 0.76 - 1.52 (0.030 - 0.060) MM (INCHES) SMA (DO-214AC) 2.69 (0.106) 2.10 (0.083) 1.27 (0.050) MM (INCHES) DIMENSIONS: Physical Specifications Case ............................................................................Molded plastic Polarity ....................................................Indicated by cathode band Weight ....................................................0.002 ounces / 0.064 grams Typical Part Marking CD214A-B120 ...................................................................... CD214A-B130 ...................................................................... CD214A-B130L .................................................................... CD214A-B140 ...................................................................... CD214A-B150 ...................................................................... CD214A-B160 ...................................................................... CD214A-B170 ...................................................................... CD214A-B180 ...................................................................... CD214A-B190 ...................................................................... CD214A-B1100 .................................................................... 120 130 130L 140 150 160 170 180 190 1100 DIMENSIONS: Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves: CD214A-B120, CD214A-B130, CD214A-B140, CD214A-B150 & CD214A-B160 Forward Characteristics 10 Reverse Characteristics 100 B120 to B140 1 B150 to B160 Reverse Current (mAmps) Forward Current (Amps) 10 Tj=125 °C Tj=100 °C 1 0.1 0.1 Tj=75 °C PULSEWIDTH 300µs 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 Tj=25 °C 0.001 0 20 40 60 80 100 120 140 Forward Voltage (Volts) Percent of Rated Peak Reverse Voltage (%) Derating Curve 1.25 Capacitance Between Terminals 1000 900 F = 1 MHz Ta = 25 °C 1.00 Average Forward Current (Amps) 800 700 0.75 Capacitance (pF) Single Phase Half Wave 60 Hz Resistive or Inductive Load 600 500 400 300 0.50 0.25 200 100 0 25 50 75 100 125 150 0 20 40 60 80 100 0.00 Lead Temperature (°C) Reverse Voltage (Volts) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves: CD214A-B130L Forward Characteristics 10 Reverse Characteristics 100 10 Reverse Current (mAmps) Tj=125 °C Tj=100 °C Forward Current (Amps) 1 1 0.1 0.1 Tj=75 °C PULSEWIDTH 300µs 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 Tj=25 °C 0.001 0 20 40 60 80 100 120 140 Forward Voltage (Volts) Percent of Rated Peak Reverse Voltage (%) Derating Curve 1.25 Capacitance Between Terminals 1000 F = 1 MHz Ta = 25 °C 900 1.00 Average Forward Current (Amps) 800 700 0.75 Capacitance (pF) Single Phase Half Wave 60 Hz Resistive or Inductive Load 0.00 25 50 75 100 125 150 0 0 20 40 60 Lead Temperature (°C) 600 500 400 300 200 100 0.50 0.25 80 100 Reverse Voltage (Volts) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves: CD214A-B170, CD214A-B180, CD214A-B190 & CD214A-B1100 Forward Characteristics 10 Reverse Characteristics 100 10 Reverse Current (mAmps) Forward Current (Amps) 1 Tj=125 °C 1 Tj=100 °C 0.1 0.1 0.01 Tj=75 °C PULSEWIDTH 300µs 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.001 0 20 40 60 80 100 120 140 Tj=25 °C Forward Voltage (Volts) Percent of Rated Peak Reverse Voltage (%) Derating Curve 1.25 Capacitance Between Terminals 1000 900 F = 1 MHz Ta = 25 °C 1.00 Average Forward Current (Amps) 800 700 0.75 Capacitance (pF) Single Phase Half Wave 60 Hz Resistive or Inductive Load 600 500 400 300 0.50 0.25 200 100 0 0 20 40 60 80 100 0.00 25 50 75 100 125 150 Lead Temperature (°C) Reverse Voltage (Volts) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Packaging Information The product will be dispensed in Tape and Reel format (see diagram below). P 0 P 1 E Index Hole 120 ° F W B D2 D1 D T d P Trailer A Device C Leader W1 Start DIMENSIONS: MM (INCHES) End ....... ....... ....... ....... ....... ....... ....... ....... 10 pitches (min.) 10 pitches (min.) Direction of Feed Devices are packed in accordance with EIA standard RS-481-A and specifications shown here. Symbol A B C d D D1 D2 E F P P0 P1 T W W1 -SMA (DO-214AC) 2.90 ± 0.10 (0.114 - 0.004) 5.59 ± 0.10 (0.220 - 0.004) 2.36 ± 0.10 (0.093 - 0.004) 1.55 ± 0.05 (0.061 - 0.002) 330 (12.992) 50.0 MIN. (1.969) 13.0 ± 0.20 (0.512 - 0.008) 1.75 ± 0.10 (0.069 - 0.004)) 5.50 ± 0.05 (0.217 - 0.002) 4.00 ± 0.10 (0.157 - 0.004) 4.00 ± 0.10 (0.157 - 0.004) 2.00 ± 0.05 (0.079 - 0.002) 0.30 ± 0.10 (0.012 - 0.004) 12.00 ± 0.20 (0.472 - 0.008) 18.4 MAX. (0.724) 5,000 REV. 02/05 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Item Carrier Width Carrier Length Carrier Depth Sprocket Hole Reel Outside Diameter Reel Inner Diameter Feed Hole Diameter Sprocket Hole Position Punch Hole Position Punch Hole Pitch Sprocket Hole Pitch Embossment Center Overall Tape Thickness Tape Width Reel Width Quantity per Reel