CD214A-B190LF

PL IA N T Features This series is currently available but not recommended for new designs. The Model CD214A-B1xR Series is the recommended replacement. OM n RoHS compliant* *R oH S C n SMA package n Surface mount LE AD F RE E n Very low forward voltage drop CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode General Information Ro VE LEA HS RS D C ION FRE OM S E PL AR IA E NT * The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AC (SMA) size format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 100 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Forward Voltage (Max.) (lf = 1 A) Typical Junction Capacitance** Reverse Current (Max.) at Rated VR) Symbol CD214AB150 B160 B120 B120L B130 B130L B140 VF 0.5 0.41 0.5 0.41 0.5 0.7 CT 110 100 110 100 110 IR 500 1000 500 1000 500 Unit B170 B180 B190 B1100 0.7 0.79 0.79 0.79 0.79 V 110 110 30 30 30 30 pF 500 500 500 500 500 500 µA B170 B180 B190 B1100 ** Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC. Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Maximum RMS Voltage Avg. Forward Current Forward Current, Surge Peak (60 Hz, 1 cycle) Typical Thermal Resistance*** Storage Temperature Junction Temperature Symbol CD214AB150 B160 Unit B120 B120L B130 B130L B140 VRRM 20 20 30 30 40 50 60 70 80 90 100 V VR VRMS IO 20 14 20 14 30 21 30 21 40 28 50 35 1 60 42 70 49 80 56 90 63 100 70 V V A Isurge 30 25 30 25 30 30 30 30 30 30 30 A RƟJL 20 35 20 35 20 20 20 25 25 25 25 °C/W TSTG TJ *** Thermal resistance junction to lead. -55 to +150 -55 to +125 °C °C How to Order CD 214A - B 1 30 L LF Asia-Pacific: Tel: +886-2 2562-4117 • Email: asiacus@bourns.com EMEA: Tel: +36 88 520 390 • Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 • Email: americus@bourns.com www.bourns.com *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Common Code Chip Diode Package 214A = SMA/DO-214AC Model B = Schottky Barrier Series Average Forward Current (IO) Code 1 = 1 A (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 30 = 30 V 40 = 40 V 100 = 100 V Forward Voltage Suffix (Applies to -B120L & -B130L only) L = Low Forward Voltage Vf (-B120L & -B130L only) No Space in P/N = Not Low Forward Voltage Terminations LF = 100 % Sn (RoHS Compliant*)  CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Product Dimensions Recommended Pad Layout A B A A C B A B C C G G H H F Dimension A D F E D Dimension SMA (DO-214AC) A 2.90 (0.114) B 2.40 (0.094) C 2.30 (0.091) E SMA (DO-214AC) MM DIMENSIONS: 4.06 - 4.57MM DIMENSIONS: (INCHES) (INCHES) (0.160 - 0.180) B 2.29 - 2.92 (0.090 - 0.115) C 1.27 - 1.63 (0.050 - 0.064) D 0.15 - 0.31 (0.006 - 0.110) E 4.83 - 5.59 (0.190 - 0.220) F 0.05 - 0.20 (0.002 - 0.008) G 2.01 - 2.62 (0.080 - 0.103) H 0.76 - 1.52 (0.030 - 0.060) MM DIMENSIONS: (INCHES) B C MM DIMENSIONS: (INCHES) Physical Specifications Case............................................................................Molded plastic Polarity.................................................... Indicated by cathode band Weight................................................... 0.002 ounces / 0.064 grams Typical Part Marking CD214A-B120........................................................................B120 CD214A-B120L......................................................................B120L CD214A-B130........................................................................B130 CD214A-B130L......................................................................B130L CD214A-B140........................................................................B140 CD214A-B150........................................................................B150 CD214A-B160........................................................................B160 CD214A-B170........................................................................B170 CD214A-B180........................................................................B180 CD214A-B190........................................................................B190 CD214A-B1100.......................................................................B1100 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.  CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves: CD214A-B120, CD214A-B130, CD214A-B140, CD214A-B150 & CD214A-B160 Forward Characteristics 10 Reverse Characteristics 10 B150 to B160 B150 to B160 1 0.1 0.1 Tj=25 °C Tj=25 °C 0.01 0.01 0.2 0.0 0.0 0.4 0.2 0.6 0.4 0.8 0.6 1.0 0.8 1.2 1.0 1.4 1.2 100 10 10 Reverse Current (mAmps) 1 Reverse Current (mAmps) Forward Current (Amps) Forward Current (Amps) B120 to B140 B120 to B140 100 Tj=125 °C Tj=125 °C 1 1 0.1 0.1 0.01 0.01 Tj=100 °C Tj=100 °C Tj=25 °C Tj=25 °C 1.6 1.4 1.8 1.6 0.001 0.001 0 0 20 1.8 2040 40 60 60 80 80100 120 100 120140 140 Percent of Rated Peak Reverse Voltage (%) Percent of Rated Peak Reverse Voltage (%) Forward Voltage (Volts) Forward Voltage (Volts) Derating Curve Capacitance Between Terminals 1.25 1000 0.75 Capacitance (pF) Average Forward Current (Amps) 1.00 0.50 100 0.25 Single Phase Half Wave 60 Hz Resistive or Inductive Load 0.00 Tj = 25 °C F = 1 MHz 0 25 50 75 100 Lead Temperature (ϒC) 125 150 0.1 1.0 4.0 10.0 Reverse Voltage (Volts) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 100  CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves: CD214A-B120L, CD214A-B130L Forward Characteristics Reverse Current (mAmps) Forward Current (Amps) 1.0 1.0 0.1 0.0 0.0 0.2 0.2 0.4 0.4 0.6 0.6 0.8 100 10 10 Tj=125 °C Tj=125 °C 1 1 0.1 0.1 Tj=100 °C Tj=100 °C 0.01 0.01 Tj = 25 °C Tj = 25 °C 0.1 100 Reverse Current (mAmps) 10 10 Forward Current (Amps) Reverse Characteristics Tj=25 °C Tj=25 °C 0.8 1.0 1.0 0.001 0.001 0 20 0 Forward Voltage (Volts) Forward Voltage (Volts) 20 40 40 60 60 80 80100 100120 120140 140 Percent of Rated Peak Reverse Voltage (%) Percent of Rated Peak Reverse Voltage (%) Derating Curve Capacitance Between Terminals 1.25 1000 0.75 Capacitance (pF) Average Forward Current (Amps) 1.00 0.50 100 0.25 Single Phase Half Wave 60 Hz Resistive or Inductive Load 0.00 25 50 75 Tj = 25 °C F = 1 MHz 100 Lead Temperature (ϒC) 125 150 0 0.1 1.0 4.0 10.0 Reverse Voltage (Volts) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 100  CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves: CD214A-B170, CD214A-B180, CD214A-B190 & CD214A-B1100 Forward Characteristics 1 1 0.1 0.1 Tj=25 °CTj=25 °C 100 100 10 10 Reverse Current (mAmps) Forward Current (Amps) Reverse Current (mAmps) 10 10 Forward Current (Amps) Reverse Characteristics 1 Tj=125 °C Tj=125 °C 1 Tj=100 °C Tj=100 °C 0.1 0.1 0.01 0.01 Tj=25 °CTj=25 °C 0.01 0.01 0.0 0.2 0.0 0.2 0.4 0.4 0.6 0.6 0.8 0.8 1.0 1.0 1.2 1.2 1.4 1.4 1.6 1.6 1.8 0.001 0.001 1.8 020 0 Forward Voltage (Volts) Forward Voltage (Volts) 2040 4060 6080 80 100 100 120 120 140 140 Percent of Rated Peak Reverse Voltage (%) Percent of Rated Peak Reverse Voltage (%) Derating Curve Capacitance Between Terminals 1.25 1000 0.75 Capacitance (pF) Average Forward Current (Amps) 1.00 0.50 100 0.25 Single Phase Half Wave 60 Hz Resistive or Inductive Load 0.00 Tj = 25 °C F = 1 MHz 25 50 75 100 Lead Temperature (ϒC) 125 150 0 0.1 1.0 4.0 10.0 Reverse Voltage (Volts) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 100  3312 - 2 mm~ B1100 SMD Trimming Potentiometer CD214A-B120 Schottky Barrier Rectifier Chip Diode Packaging Information The product is dispensed in tape and reel format (see diagram below). P 0 P 1 d T E Index Hole Pin 1 Location 120 ° F D2 W B D1 D P A Trailer ....... ....... End C Device ....... ....... Leader ....... ....... ....... ....... 10 pitches (min.) 10 pitches (min.) Start W1 MM DIMENSIONS: (INCHES) Direction of Feed Item Symbol SMA (DO-214AC) Carrier Width A 2.90 ± 0.10 (0.114 ± 0.004) Carrier Length B 5.59 ± 0.10 (0.220 ± 0.004) Carrier Depth C 2.36 ± 0.10 (0.093 ± 0.004) Sprocket Hole d 1.55 ± 0.05 (0.061 ± 0.002) Reel Outside Diameter D 3.30 (12.992) Reel Inner Diameter D1 Feed Hole Diameter D2 13.0 ± 0.20 (0.512 ± 0.008) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 5.50 ± 0.05 (0.217 ± 0.002) Punch Hole Pitch P 4.00 ± 0.10 (0.157 ± 0.004) Sprocket Hole Pitch P0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P1 2.00 ± 0.05 (0.079 ± 0.002) Overall Tape Thickness T 0.30 ± 0.10 (0.012 ± 0.004) Tape Width W 12.00 ± 0.20 (0.472 ± 0.008) Reel Width W1 Quantity per Reel -- Devices are packed in accordance with EIA standard RS-481-A and specifications shown here. 50.0 MIN. (1.969) 18.4 MAX. (0.724) 5,000 REV. 01/18 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.