CD214A-B340LF

PL IA N T Features OM n RoHS compliant* *R oH S C n SMA package n Surface mount LE AD F RE E n High current capability CD214A-B320 ~ B360 Schottky Barrier Rectifier Chip Diode General Information Ro VE LEA HS RS D C ION FRE OM S E PL AR IA E NT * The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AC (SMA) size format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 3 A with a choice of repetitive peak reverse voltage of 20 V up to 60 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Forward Voltage (Max.) (lf = 3 A) Typical Junction Capacitance** Reverse Current (Max.) at Rated VR) Symbol B320 B330 B340 VF 0.5 0.5 0.5 CT 250 250 IR 0.5 0.5 CD214AB340L Unit B350 B360 0.45 0.7 0.7 V 250 300 250 250 pF 0.5 1.0 0.5 0.5 mA B350 B360 ** Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC. Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Maximum RMS Voltage Avg. Forward Current Forward Current, Surge Peak (60 Hz, 1 cycle) Typical Thermal Resistance*** Storage Temperature Junction Temperature Symbol CD214AB340L Unit B320 B330 B340 VRRM 20 30 40 40 50 60 V VR 20 30 40 40 50 60 V VRMS IO 14 21 28 3 28 35 42 V A Isurge 100 100 100 70 100 100 A RƟJL 10 10 10 20 10 10 °C/W TSTG TJ *** Thermal resistance junction to lead. -55 to +150 °C -55 to +125 °C How to Order CD 214A - B 3 40 L LF Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 EMEA: Tel: +36 88 520 390 • Fax: +36 88 520 211 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Common Code Chip Diode Package 214A = SMA/DO-214AC Model B = Schottky Barrier Series Average Forward Current (IO) Code 3 = 3 A (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 30 = 30 V 40 = 40 V 60 = 60 V Forward Voltage Suffix (Applies to -B340L only) L = Low Forward Voltage Vf (-B340L only) No Space in P/N = Not Low Forward Voltage Terminations LF = 100 % Sn (RoHS Compliant*)  CD214A-B320 ~ B360 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves: CD214A-B320, CD214A-B330, CD214A-B340, CD214A-B350 & CD214A-B360 Forward Characteristics 10 Reverse Characteristics 100 10 B350 to B360 B350 to B360 1 0.1 0.1 10 Tj=125 °C Tj=125 °C Instantaneous Reverse Current (mA) 1 10 Instantaneous Reverse Current (mA) Forward Current (Amps) Forward Current (Amps) B320 to B340 B320 to B340 100 1 Tj=25 °CTj=25 °C 1 Tj=100 °C Tj=100 °C 0.1 0.1 0.01 0.01 Tj=25 °CTj=25 °C PULSEWIDTH 300 �s PULSEWIDTH 300 �s 0.01 0.01 0.0 0.0 0.2 0.2 0.4 0.4 0.6 0.6 0.8 0.8 1.0 1.0 0.001 0.001 0 0 10 10 Forward Voltage (Volts) Forward Voltage (Volts) 20 20 30 30 40 40 50 50 Rated Peak Reverse Voltage (V) Rated Peak Reverse Voltage (V) Derating Curve Capacitance Between Terminals 3.50 1000 F = 1 MHz Ta = 25 ϒC 900 3.00 700 Capacitance (pF) Average Forward Current (Amps) 800 2.50 2.00 1.50 1.00 500 400 300 200 0.50 0.00 600 Single Phase Half Wave 60 Hz Resistive or Inductive Load 25 50 75 100 100 Lead Temperature (ϒC) 125 150 0 0 20 40 60 Reverse Voltage (Volts) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 80 100  CD214A-B320 ~ B360 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves: CD214A-B340L Forward Characteristics 10 Reverse Characteristics 1000 1000 10 1 Tj=25 °CTj=25 °C 100 Reverse Current (mAmps) 1 Reverse Current (mAmps) Forward Current (Amps) Forward Current (Amps) 100 10 Tj=125 °C Tj=125 °C Tj=100 °C 10 1 1 0.1 0.1 Tj=100 °C Tj=25 °C Tj=25 °C Tj=125 °C Tj=125 °C 0.1 0 0.1 Tj=100 °C Tj=100 °C PULSEWIDTH 300 s PULSEWIDTH 300�s 0.01 0.05 0.05 0.15 0.10 0.20 0.15 0.25 0.20 0.30 0.25 0.35 0.30 0.40 0.35 0.45 0.40 0.50 0.45 0.55 0.50 0 0.10 0.01 05 0 0.55 10 1015 20 20 25 30 30 35 4040 45 45 Rated Peak Reverse Voltage (V) Rated Peak Reverse Voltage (V) Forward Voltage (Volts) Forward Voltage (Volts) Derating Curve Capacitance Between Terminals 3.50 1000 F = 1 MHz Ta = 25 ϒC 900 3.00 700 Capacitance (pF) Average Forward Current (Amps) 800 2.50 2.00 1.50 1.00 500 400 300 200 0.50 0.00 600 Single Phase Half Wave 60 Hz Resistive or Inductive Load 25 50 75 100 100 Lead Temperature (ϒC) 125 150 0 0 20 40 60 80 100 Reverse Voltage (Volts) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.  CD214A-B320 ~ B360 Schottky Barrier Rectifier Chip Diode Product Dimensions Recommended Pad Layout A A B A A C B B C C G G H H Dimension A F D F E E SMA (DO-214AC) MM DIMENSIONS: 4.06 - 4.57 MM (INCHES) DIMENSIONS: (INCHES) (0.160 - 0.180) B 2.29 - 2.92 (0.090 - 0.115) C 1.27 - 1.63 (0.050 - 0.064) D 0.15 - 0.31 (0.006 - 0.110) E 4.83 - 5.59 (0.190 - 0.220) F 0.05 - 0.20 (0.002 - 0.008) G 2.01 - 2.62 (0.080 - 0.103) H 0.76 - 1.52 (0.030 - 0.060) DIMENSIONS: MM (INCHES) D Dimension SMA (DO-214AC) A 2.90 (0.114) B 2.40 (0.094) C 2.30 (0.091) DIMENSIONS: B C MM (INCHES) Physical Specifications Case............................................................................Molded plastic Polarity.................................................... Indicated by cathode band Weight................................................... 0.002 ounces / 0.064 grams Typical Part Marking CD214A-B320......................................................................B CD214A-B330......................................................................B CD214A-B340......................................................................B CD214A-B340L....................................................................B CD214A-B350......................................................................B CD214A-B360......................................................................B 320A 330A 340A 340LA 350A 360A Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.  3312 - 2 mm~ B360 SMDSchottky Trimming Potentiometer CD214A-B320 Barrier Rectifier Chip Diode Packaging Information The product is dispensed in tape and reel format (see diagram below). P 0 P 1 d T E Index Hole Pin 1 Location 120 ° F D2 W B D1 D P A Trailer ....... ....... End C Device ....... ....... Leader ....... ....... ....... ....... 10 pitches (min.) 10 pitches (min.) W1 Start DIMENSIONS: MM (INCHES) Direction of Feed Item Symbol SMA (DO-214AC) Carrier Width A 2.90 ± 0.10 (0.114 ± 0.004) Carrier Length B 5.59 ± 0.10 (0.220 ± 0.004) Carrier Depth C 2.36 ± 0.10 (0.093 ± 0.004) Sprocket Hole d 1.55 ± 0.05 (0.061 ± 0.002) Reel Outside Diameter D 3.30 (12.992) Reel Inner Diameter D1 Feed Hole Diameter D2 13.0 ± 0.20 (0.512 ± 0.008) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 5.50 ± 0.05 (0.217 ± 0.002) Punch Hole Pitch P 4.00 ± 0.10 (0.157 ± 0.004) Sprocket Hole Pitch P0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P1 2.00 ± 0.05 (0.079 ± 0.002) Overall Tape Thickness T 0.30 ± 0.10 (0.012 ± 0.004) Tape Width W 12.00 ± 0.20 (0.472 ± 0.008) Reel Width W1 Quantity per Reel -- Devices are packed in accordance with EIA standard RS-481-A and specifications shown here. 50.0 MIN. (1.969) 18.4 MAX. (0.724) 5,000 REV. 03/16 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.