CD214B-B160

oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features ■ ■ ■ ■ ■ Lead free versions available RoHS compliant (lead free version)* Reverse voltage from 20 to 60 V Forward current of 1 A High current capability ■ For use in low voltage high frequency inverters, free wheeling and polarity protection applications *R CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AA (SMB) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Schottky Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 60 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration minimizes roll away. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CD214BB120 B130 B140 B150 B160 Unit Forward Voltage (Max.) (If = 2 A) Typical Junction Capacitance* Reverse Current (Max.) at Rated VR) VF CT IR 0.5 0.5 0.5 110 0.5 0.7 0.7 V pF mA * Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CD214BB120 B130 B140 B150 B160 Unit Repetitive Peak Reverse Voltage Reverse Voltage Maximum RMS Voltage Avg. Forward Current Forward Current, Surge Peak (60 Hz, 1 cycle) Typical Thermal Resistance** Storage Temperature Junction Temperature VRRM VR VRMS IO Isurge RΘJL TSTG TJ 20 20 14 30 30 21 40 40 28 1 30 50 50 35 60 60 42 V V V A A 20 -55 to +150 -55 to +125 °C/W °C °C ** Thermal resistance junction to lead. Reliable Electronic Solutions Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 Europe: Tel: +41-41 768 5555 • Fax: +41-41 768 5510 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode Product Dimensions A Recommended Pad Layout A B C B DIMENSIONS: G MM (INCHES) C Dimension A (Max.) H F E D B (Min.) C (Min.) SMB (DO-214AA) 2.69 (0.106) 2.10 (0.083) 1.27 (0.050) Dimension A B C D E F G H SMB (DO-214AA) 4.06 - 4.57 (0.160 - 0.180) 3.30 - 3.94 (0.130 - 0.155) 1.96 - 2.21 (0.078 - 0.087) 0.15 - 0.31 (0.006 - 0.112) 5.21 - 5.59 (0.205 - 0.220) 0.05 - 0.20 (0.002 - 0.008) 2.01 - 2.62 (0.080 - 0.103) 0.76 - 1.52 (0.030 - 0.060) Physical Specifications Case ............................................................................Molded plastic Polarity ....................................................Indicated by cathode band Weight ....................................................0.003 ounces / 0.093 grams Typical Part Marking CD214B-B220 ...................................................................... CD214B-B230 ...................................................................... CD214B-B240 ...................................................................... CD214B-B250 ...................................................................... CD214B-B260 ...................................................................... 120B 130B 140B 150B 160B How To Order MM DIMENSIONS: (INCHES) CD 214B - B 1 30 __ Common Code Chip Diode Package • 214B = SMB/DO-214AA Model B = Schottky Barrier Series Average Forward Current (Io) Code 1 = 1 A (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 20 = 20 V 30 = 30 V 40 = 40 V 50 = 50 V 60 = 60 V Terminations LF = 100 % Sn (lead free) Blank = Sn/Pb *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves Forward Current Derating Curve 1.00 Average Forward Current (Amps) Maximum Non-Repetitive Surge Current Peak Forward Surge Current (Amps) 30 0.75 20 0.50 10 Pulse Width 8.3 ms Single Half Sine-Wave (JEDEC Method) 0 1 2 5 10 20 50 100 Number of Cycles at 60 Hz 0.25 Single Phase Half Wave 60 Hz Resistive or Inductive Load 0.00 20 40 60 80 100 120 140 Lead Temperature (°C) Typical Forward Characteristics 10 Typical Junction Capacitance 1000 Instantaneous Forward Current (Amps) B120 to B140 1.0 Ta = 25 °C Pulsewidth: 300 µs Capacitance (pF) B150 to B160 100 0.1 .01 0 0.2 0.4 0.6 0.8 1.0 F = 1 MHz TJ = 25 °C 0 0.1 1.0 4.0 10.0 100 Reverse Voltage (Volts) Instantaneous Forward Voltage (Volts) Typical Reverse Characteristics 100 10 Instantaneous Reverse Current (mA) Ta = 125 °C 1.0 Ta = 100 °C 0.1 0.01 Ta = 25 °C 0.001 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode Packaging Information The product will be dispensed in Tape and Reel format (see diagram below). P 0 P 1 E Index Hole 120 ° F W B D2 D1 D T d P Trailer A Device C Leader W1 Start DIMENSIONS: MM (INCHES) End ....... ....... ....... ....... ....... ....... ....... ....... 10 pitches (min.) 10 pitches (min.) Direction of Feed Devices are packed in accordance with EIA standard RS-481-A and specifications shown here. Symbol A B C d D D1 D2 E F P P0 P1 T W W1 -SMB (DO-214AA) 4.94 ± 0.10 (0.194 - 0.004) 5.57 ± 0.10 (0.219 - 0.004) 2.36 ± 0.10 (0.093 - 0.004) 1.55 ± 0.05 (0.061 - 0.002) 330 (12.992) 50.0 MIN. (1.969) 13.0 ± 0.20 (0.512 - 0.008) 1.75 ± 0.10 (0.069 - 0.004)) 5.50 ± 0.05 (0.217 - 0.002) 4.00 ± 0.10 (0.157 - 0.004) 4.00 ± 0.10 (0.157 - 0.004) 2.00 ± 0.05 (0.079 - 0.002) 0.30 ± 0.10 (0.012 - 0.004) 12.00 ± 0.20 (0.472 - 0.008) 18.4 MAX. (0.724) 3,000 *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Item Carrier Width Carrier Length Carrier Depth Sprocket Hole Reel Outside Diameter Reel Inner Diameter Feed Hole Diameter Sprocket Hole Position Punch Hole Position Punch Hole Pitch Sprocket Hole Pitch Embossment Center Overall Tape Thickness Tape Width Reel Width Quantity per Reel REV. 04/05