PL
IA
N
T
Features
This series is currently available but
not recommended for new designs.
The Model CD214C-FS3x Series
is the recommended replacement.
OM
n RoHS compliant*
*R
oH
S
C
n Glass passivated chip
n Low reverse leakage current
n Low forward voltage drop
LE
AD
F
RE
E
n High current capability
CD214C-F350~F3600 Fast Response Rectifiers
General Information
Ro VE LEA
HS RS D
C ION FRE
OM S E
PL AR
IA E
NT
*
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications, in compact chip
DO-214AB (SMC) size format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Glass
Passivated Rectifier Diodes offer a forward current of 3.0 A with a choice of repetitive peak reverse voltage of 50 V up to 600 V.
Bourns Chip Diodes® conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat
configuration minimizes roll away.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Maximum Repetitive
Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current (@TL = 100 °C)1
DC Reverse Current @ Rated DC
Blocking Voltage @TJ = 25 °C)
DC Reverse Current @ Rated DC
Blocking Voltage @TJ = 125 °C)
Typical Junction Capacitance 2
Maximum Instantaneous
Forward Voltage @ 3 A
Typical Thermal Resistance 3
Typical Thermal Resistance 4
Peak Forward Surge Current 8.3 ms
Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
Maximum Reverse Recovery Time
F350
F3100
CD214CF3200
F3400
F3600
VRRM
50
100
200
400
600
V
VRMS
VDC
35
50
70
100
140
200
280
400
420
600
V
V
Symbol
Unit
I(AV)
3.0
A
IR
10.0
µA
IR
500.0
µA
CJ
45
pF
VF
RƟJA
RƟJL
0.92
1.25
50
10
IFSM
Trr
1.30
°C/W
15
100
25
V
°C/W
A
35
ns
Notes:
1 See Forward Derating Curve.
2 Measured at 1 MHz and an applied reverse voltage of 4.0 V.
3 Thermal resistance from junction to ambient.
4 Thermal resistance from junction to lead.
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Operating Temperature Range
Storage Temperature Range
Symbol
TJ
TSTG
CD214C-F350~F3600
-55 to +150
-55 to +150
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Unit
°C
°C
CD214C-F350~F3600 Fast Response Rectifiers
Product Dimensions
Recommended Pad Layout
This is an RoHS compliant product using 100 % Sn termination. It
is a molded plastic package. A cathode band indicates the polarity. The package weighs approximately 0.21 g. The package and
dimensions are shown below.
5.60
(0.220)
6.60 - 7.11
(0.260 - 0.280)
4.00
(0.157)
2.92 - 3.18
(0.115 - 0.125)
5.59 - 6.22
(0.220 - 0.240)
DIMENSIONS:
MM
(INCHES)
2.30
(0.91)
How to Order
CD 214C - F 3 50
Common Code
CD = Chip Diode
Package
214C = SMC/DO-214AB
2.01 - 2.62
(0.080 - 0.103)
Model Series
F = Fast Rectifier
0.05 - 0.20
(0.002 - 0.008)
0.76 - 1.52
(0.03 - 0.06)
7.75 - 8.13
(0.305 - 0.320)
MMMM
DIMENSIONS:
DIMENSIONS: (INCHES)
(INCHES)
0.15 - 0.31
(0.006 - 0.012)
Forward Current I(AV)
3=3A
Reverse Voltage
50 = 50 V
100 = 100 V
200 = 200 V
400 = 400 V
600 = 600 V
Typical Part Marking
CD214C-F350............................................................................. F3A
CD214C-F3100...........................................................................F3B
CD214C-F3200...........................................................................F3D
CD214C-F3400...........................................................................F3G
CD214C-F3600........................................................................... F3J
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214C-F350~F3600 Fast Response Rectifiers
Performance Graphs
Forward Current Derating Curve
Maximum Non-Repetitive Surge Current
2.5
3.0
2.0
2.5
1.5
2.0
1.0
1.5
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
0.5
1.0
0.50
0
25
Single Phase Half Wave 60 Hz
50
75
100
Resistive or Inductive Load
25
125
Lead Temperature (°C)
75
100
125
50
150
150
175
Peak Forward Surge Current (Amps)
Peak Forward Surge Current (Amps)
Average Forward Current (Amps)
Average Forward Current (Amps)
3.0
175
100
100
80
60
80
40
60
20
40
200
0
1
1
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
Pulse Width 8.3 ms
Single Half Sine-Wave
2
5
10
20
(JEDEC Method)
Number of Cycles at 60 Hz
2
5
10
20
Lead Temperature (°C)
F350-F3200
1.0
F3600
F3600
1.0
0.1
0.1
Pulsewidth: 300 µs
TJ = 25 °C
0.01
0.01
0
0
0.2
0.2
Pulsewidth: 300 µs
1.0 TJ = 25 °C
1.2
1.4
1.6
Instantaneous Forward Voltage (Volts)
0.4 0.6
0.8
1.0
1.2
1.4
1.6
0.4
0.6
100
1000
F3400
F3400
50
1000Reverse Characteristics
Typical
0.8
Instantaneous Forward Voltage (Volts)
1.8
Instantaneous Reverse Leakage Current (mA)
Instantaneous Reverse Leakage Current (mA)
Instantaneous Forward Current (Amps)
Instantaneous Forward Current (Amps)
F350-F3200
100
Number of Cycles at 60 Hz
10.0 Forward Characteristics
Typical
10.0
50
100
TJ = 125 °C
100
TJ = 125 °C
10
10
1.0
TJ = 25 °C
1.0
0.1
0.1
1.8
TJ = 25 °C
0
20
120
140
0
Percent of Rated Peak Reverse Voltage (%)
20
40
60
80
100
120
40
60
80
100
140
Percent of Rated Peak Reverse Voltage (%)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214C-F350~F3600 Fast Response Rectifiers
Packaging Information
The product is dispensed in Tape and Reel format (see diagram below).
P
0
P
1
d
T
E
Index Hole
Pin 1
Location
120 °
F
D2
W
B
D1 D
P
A
Trailer
.......
.......
End
C
Device
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min.)
10 pitches (min.)
Direction of Feed
Item
Symbol
SMC (DO-214AB)
Carrier Width
A
6.22 ± 0.10
(0.245 ± 0.004)
Carrier Length
B
8.31 ± 0.10
(0.327 ± 0.004)
Carrier Depth
C
2.49 ± 0.10
(0.098 ± 0.004)
Sprocket Hole
d
1.55 ± 0.05
(0.061 ± 0.002)
Reel Outside Diameter
D
330
(12.992)
Reel Inner Diameter
D1
1.00 ± 2.0
(0.039 ± 0.079)
Feed Hole Diameter
D2
13.0 ± 0.20
(0.512 ± 0.008)
Sprocket Hole Position
E
1.75 ± 0.10
(0.069 ± 0.004)
Punch Hole Position
F
7.50 ± 0.10
(0.295 ± 0.004)
Punch Hole Pitch
P
8.00 ± 0.10
(0.1315 ± 0.004)
Sprocket Hole Pitch
P0
4.00 ± 0.10
(0.157 ± 0.004)
Embossment Center
P1
2.00 ± 0.10
(0.079 ± 0.004)
Overall Tape Thickness
T
Tape Width
W
Reel Width
W1
Quantity per Reel
--
Start
W1
MM
DIMENSIONS:
(INCHES)
Devices are packed in accordance with EIA standard RS-481-A
and specifications shown here.
Asia-Pacific:
Tel: +886-2 2562-4117
Fax: +886-2 2562-4116
EMEA:
Tel: +36 88 520 390
Fax: +36 88 520 211
The Americas:
Tel: +1-951 781-5500
Fax: +1-951 781-5700
www.bourns.com
0.40
MAX.
(0.016)
16.00 ± 0.30
(0.630 ± 0.012)
22.4
MAX.
(0.882)
3000
REV. 01/18
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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