CD216A-B140LF

T PL IA N M CO Features This series is currently available, but not recommended for new designs. The Model CD123D-B Series is the recommended replacement. ■ RoHS compliant* *R oH S ■ Low profile ■ Surface mount ■ Very low forward voltage drop CD216A-B120L~B140 MITE Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications in compact DO-216AA size chip package formats, which offer PCB real estate savings and are considerably smaller than competitive parts. The Schottky Barrier Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 40 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and their flat configuration minimizes roll away. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Forward Voltage (Max.) (lf = 1 A) Typical Junction Capacitance** Reverse Current (Max.) (@ Rated VR) Symbol VF CT IR B120L 0.45 90 400 CD216B120R B130L 0.53 0.38 75 70 10 410 B140 0.55 60 500 Unit V pF μA **Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage RMS Voltage Average Forward Current @ TL = 130 °C Peak Forward Surge Current*** Max. Instantaneous Forward Voltage**** @ IF = 0.1 A @ IF = 1.0 A @ IF = 2.0 A @ IF = 3.0 A Max. Instantaneous Reverse Current @ VR = 40 V @ VR = 30 V @ VR = 20 V @ VR = 10 V @ VR = 5 V Thermal Resistance Junction to Lead (Anode) Junction to Tab (Cathode) Junction to Ambient Storage Temperature Junction Temperature Symbol VRRM VDC VRMS IO IFSM VF B120L 20 20 14 CD216B120R B130L 20 30 20 30 14 21 1 50 50 B140 40 40 28 Unit 40 V V V A A 0.30 0.38 0.36 0.55 V 0.65 0.52 0.85 0.4 0.1 0.41 0.13 0.05 50 0.34 0.45 0.455 0.53 0.595 0.50 IR RƟJL RƟJTAB RƟJA TSTG TJ 0.0100 0.0010 0.0005 35 20 250 -55 to +150 -55 to +125 mA 0.15 °C/W °C °C ***Surge Current 8.3 ms single phase, half sine wave, 60 Hz (JEDEC Method). ****Pulse Test; Pulse Width = 300 μS, Duty Cycle = 2 %. WARNING Cancer and Reproductive Harm - www.P65Warnings.ca.gov *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Applications ■ Cellular phones ■ PDAs ■ Desktop PCs and notebooks ■ Digital cameras ■ MP3 players CD216A-B120L~B140 MITE Chip Diode Product Dimensions Recommended Pad Layout H A TAB 1 A B B K C J D Dimension DO-216AA A 2.67 (0.105) B 2.54 (0.100) C 1.27 (0.050) D 0.625 (0.025) E 0.762 (0.030) C G I G F E D Dimension DO-216AA A 1.75 - 2.05 (0.069 - 0.081) B 1.80 - 2.20 (0.071 - 0.087) C 0.95 - 1.15 (0.037 - 0.045) D 0.42 - 0.68 (0.017 - 0.027) E 0.70 - 1.00 (0.028 - 0.039) F 0.05 - 0.10 (0.002 - 0.004) G 0.10 - 0.25 (0.004 - 0.010) H 3.65 - 3.95 (0.144 - 0.156) I 0.40 - 0.70 (0.016 - 0.028) J 1.10 - 1.50 (0.043 - 0.059) K 0.20 - 0.80 (0.008 - 0.060) E Physical Specifications Case ............................................. JEDEC 20-216AA Molded plastic Polarity............................................... Cathode designated by TAB 1 Weight ...................................................Approximately 0.016 grams Mounting Position ............................................................... One way Typical Part Marking CD216A-B120L .......................................................................... B2L CD216A-B120R..........................................................................B2E CD216A-B130L .......................................................................... B3L CD216A-B140 ............................................................................B4S How to Order CD 216A - B 1 20 L LF Common Code Chip Diode Package • 216A = DO-216AA Model B = Schottky Barrier Series Average Forward Current (IO) Code 1 = 1 A (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 20 = 20 V 30 = 30 V 40 = 40 V Forward Voltage Suffix L = Low Forward Voltage Vf (CD216-B120L, CD216-B130L) R = Low Leakage Current IR (CD216-B120R) Terminations LF = 100 % Sn (RoHS Compliant) MM (INCHES) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. DIMENSIONS: CD216A-B120L~B140 MITE Chip Diode Rating & Characteristic Curves: CD216A-B120L Forward Characteristics Reverse Characteristics 10 100 Ta = 25 °C Pulsewidth: 300 µs 125 °C 10 Reverse Current (µA) Forward Current (Amps) 100 °C 1 1 0.1 25 °C 0.01 125 °C 0.1 100 °C 0.0 0.001 25 °C 0.2 0.4 0.6 0 0.8 5 10 15 20 25 Reverse Voltage (Volts) Forward Voltage (Volts) Derating Curve Capacitance Between Terminals 1.25 200 180 F = 1 MHz Ta = 25 ϒC 160 140 0.75 Capacitance (pF) Average Forward Current (Amps) 1.00 0.50 120 100 80 60 0.25 Single Phase Half Wave 60 Hz Resistive or Inductive Load 40 0.00 25 50 75 100 Lead Temperature (ϒC) 125 150 20 0 0 10 20 30 40 Reverse Voltage (Volts) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. CD216A-B120L~B140 MITE Chip Diode Rating & Characteristic Curves: CD216A-B120R Forward Characteristics Reverse Characteristics 10 1000 Ta = 25 °C Pulsewidth: 300 µs 125 °C 100 Reverse Current (µA) Forward Current (Amps) 100 °C 1 10 1 25 °C 0.1 125 °C 0.1 100 °C 0.2 0.01 25 °C 0 0.4 0.6 5 10 0.8 15 20 25 Reverse Voltage (Volts) Forward Voltage (Volts) Capacitance Between Terminals 1.25 150 1.00 125 F = 1 MHz Ta = 25 ϒC 100 0.75 Capacitance (pF) Average Forward Current (Amps) Derating Curve 0.50 75 50 0.25 Single Phase Half Wave 60 Hz Resistive or Inductive Load 25 0.00 25 50 75 100 Lead Temperature (ϒC) 125 150 0 0 10 20 30 40 Reverse Voltage (Volts) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. CD216A-B120L~B140 MITE Chip Diode Rating & Characteristic Curves: CD216A-B130L Forward Characteristics Reverse Characteristics 10 100 Ta = 25 °C Pulsewidth: 300 µs 125 °C 10 Reverse Current (µA) Forward Current (Amps) 100 °C 1 1 0.1 25 °C 0.01 100 °C 125 °C 0.1 0 0.001 25 °C 0.2 0 0.4 0.6 0.8 5 10 1 15 20 25 30 35 Reverse Voltage (Volts) Forward Voltage (Volts) Capacitance Between Terminals 1.25 150 1.00 125 F = 1 MHz Ta = 25 ϒC 100 0.75 Capacitance (pF) Average Forward Current (Amps) Derating Curve 0.50 75 50 0.25 Single Phase Half Wave 60 Hz Resistive or Inductive Load 25 0.00 25 50 75 100 Lead Temperature (ϒC) 125 150 0 0 10 20 30 40 Reverse Voltage (Volts) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific disclaimers as set forth on the last page of this document, and at www.bourns.com/legal/disclaimer.pdf. CD216A-B120L~B140 MITE Chip Diode Rating & Characteristic Curves: CD216A-B140 Forward Characteristics Reverse Characteristics 10 10 Ta = 25 °C Pulsewidth: 300 µs 125 °C 1 Reverse Current (mA) Forward Current (Amps) 100 °C 1 0.1 0.01 25 °C 0.001 0.0001 0 100 °C 125 °C 0.1 0 0.2 5 10 15 20 25 30 35 40 45 Reverse Voltage (Volts) 25 °C 0.4 0.6 0.8 1 Forward Voltage (Volts) Capacitance Between Terminals 1.25 150 1.00 125 F = 1 MHz Ta = 25 ϒC 100 0.75 Capacitance (pF) Average Forward Current (Amps) Derating Curve 0.50 75 50 0.25 Single Phase Half Wave 60 Hz Resistive or Inductive Load 25 0.00 25 50 75 100 Lead Temperature (ϒC) 125 150 0 0 10 20 30 40 Reverse Voltage (Volts) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific disclaimers as set forth on the last page of this document, and at www.bourns.com/legal/disclaimer.pdf. CD216A-B120L~B140 MITE Chip Diode Packaging Information The product is dispensed in tape and reel format (see diagram below). P 0 P 1 d T E Index Hole Pin 1 Location 120 ° F D2 W B D1 D P A Trailer ....... ....... End C Device ....... ....... ....... ....... 10 pitches (min.) Leader ....... ....... W1 Start DIMENSIONS: 10 pitches (min.) Direction of Feed Item Symbol Carrier Width A Carrier Length B Carrier Depth C Sprocket Hole d Reel Outside Diameter D Reel Inner Diameter D1 Feed Hole Diameter D2 Sprocket Hole Position E Punch Hole Position F Punch Hole Pitch P Sprocket Hole Pitch P0 Embossment Center P1 Overall Tape Thickness T Tape Width W Reel Width W1 Quantity per Reel MM (INCHES) -- DO-216AA 2.90 ± 0.10 (0.114 ± 0.004) 5.30 ± 0.10 (0.209 ± 0.004) 1.37 ± 0.10 (0.054 ± 0.004) 1.55 ± 0.05 (0.061 ± 0.002) 178 (7.008) 75.0 (2.953) MIN. 13.0 ± 0.20 (0.512 ± 0.008) 1.75 ± 0.10 (0.069 ± 0.004) 5.50 ± 0.05 (0.217 ± 0.002) 4.00 ± 0.10 (0.157 ± 0.004) 4.00 ± 0.10 (0.157 ± 0.004) 2.00 ± 0.05 (0.079 ± 0.002) 0.40 ± 0.10 (0.016 ± 0.004) 12.00 ± 0.20 (0.472 ± 0.008) 18.4 (0.724) MAX. 3,000 Devices are packed in accordance with EIA standard RS-481-A and specifications shown here. Asia-Pacific: Tel: +886-2 2562-4117 Email: asiacus@bourns.com Europe: Tel: +36 88 885 877 Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 Email: americus@bourns.com www.bourns.com REV. 08/19 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific disclaimers as set forth on the last page of this document, and at www.bourns.com/legal/disclaimer.pdf. Legal Disclaimer Notice This legal disclaimer applies to purchasers and users of Bourns® products manufactured by or on behalf of Bourns, Inc. and P[ZHɉSPH[LZJVSSLJ[P]LS`¸)V\YUZ¹ Unless otherwise expressly indicated in writing, Bourns® products and data sheets relating thereto are subject to change ^P[OV\[UV[PJL