CDNBS08-T24C

CDNBS08-T24C

  • 厂商:

    BOURNS(伯恩斯)

  • 封装:

    SOIC8_150MIL

  • 描述:

    TVS DIODE 24VWM 49VC SMD

  • 详情介绍
  • 数据手册
  • 价格&库存
CDNBS08-T24C 数据手册
Features Applications ■ RoHS compliant* ■ Audio/video inputs ■ Protects four lines ■ RS-232, RS-422 and RS-423 data lines ■ Unidirectional and bidirectional ■ Portable electronics configurations ■ ESD protection: 30 kV max. ■ Medical sensors CDNBS08-T03~T36C - TVS Diode Array Series General Information Additional Information 8 The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Steering Diode/Transient Voltage Suppressor Array diodes for surge and ESD protection applications in an eight lead narrow body SOIC package size format. TheTransient Voltage Suppressor Array series offer a choice of voltage types ranging from 3 V to 36 V in unidirectional and bidirectional configurations. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. 7 6 5 Click these links for more information: PRODUCT TECHNICAL INVENTORY SAMPLES SELECTOR LIBRARY The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge) requirements. 1 2 3 4 8 7 6 5 1 2 3 WARNING Cancer and Reproductive Harm 4 www.P65Warnings.ca.gov *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Max. Unit TJ -55 to +150 °C TSTG -55 to +150 °C Operating Temperature Storage Temperature CONTACT Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) CDNBS08Parameter Symbol Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- UniT03 T03C T05 T05C T08 T08C T12 T12C T15 T15C T24 T24C T36 BiT36C Unit Min. Breakdown Voltage @ 1 mA VBR 3.3 6.0 8.5 13.3 16.7 26.7 40.0 V Working Peak Voltage VWM 3.0 5.0 8.0 12.0 15.0 24.0 36.0 V Max. Clamping Voltage VC @ IP = 1 A 1 VC 8.0 9.8 13.4 19.0 24.0 43.0 51.0 V Typ. Clamping Voltage @ 8/20 μs VC @ IPP 1 VC 10.9 V @ 43 A 13.5 V @ 42 A 16.9 V @ 34 A 25.9 V @ 21 A 30.0 V @ 17 A 49.0 V @ 12 A 76.8 V @9A V Max. Leakage Current @ VWM ID 125 20 10 1 1 1 1 μA Max. Cap. Bidirectional @ 0 V, 1 MHz CJ(SD) 450 308 300 105 80 50 45 pF ESD Protection per IEC 61000-4-2 Contact - Min. Contact - Max. Air - Min. Air - Max. Peak Pulse Power (tp = 8/20 μs) 2 Forward Voltage @ 100 mA, 300 μs - Square Wave 3 ESD ±8 ±30 ±15 ±30 kV PPP 500 W VF 1.5 V Notes: 1. See Pulse Wave Form. 2. See Peak Pulse Power vs. Pulse Time. 3. Only applies to unidirectional devices. 4. Part numbers with a “C” suffix are bidirectional devices, i.e. CDNBS08-T03C. CDNBS08-T03~T36C - TVS Diode Array Series Product Dimensions Recommended Footprint This is an RoHS compliant molded JEDEC narrow body SO-8 package with 100 % Sn plating on the lead frame. It weighs approximately 15 mg and has a flammability rating of UL 94V-0. A B A J G 45 ° NOM. D C B C 4°±4° H I E 7 ° NOM. 4 PLCS. D Dimensions DIMENSIONS = MILLIMETERS (INCHES) 7 ° NOM. 3 PLCS. E F K L A 1.143 - 1.397 (0.045 - 0.065) B 0.635 - 0.889 (0.025 - 0.035) C 6.223 Min. (0.245) Min. D 3.937 - 4.191 (0.155 - 0.165) E 1.016 - 1.27 (0.040 - 0.050) Dimensions A 4.80 - 5.00 (0.189 - 0.197) B 3.81 - 4.00 (0.150 - 0.157) C 5.80 - 6.20 (0.228 ± 0.244) D 0.36 - 0.51 (0.014 - 0.020) E 1.35 - 1.75 (0.053 - 0.069) F 0.102 - 0.203 (0.004 - 0.008) G 0.25 - 0.50 (0.010 - 0.020) H 0.51 - 1.12 (0.020 - 0.044) I 0.190 - 0.229 (0.0075 - 0.0090) J 4.60 - 5.21 (0.181 - 0.205) K 0.28 - 0.79 (0.011 - 0.031) L 1.27 (0.050) DIMENSIONS: MM (INCHES) Typical Part Marking CDNBS08-T03....................SDL CDNBS08-T03C ............... SDM CDNBS08-T05................... SDA CDNBS08-T05C ................ SDB CDNBS08-T08....................SDJ CDNBS08-T08C ................ SDK CDNBS08-T12...................SDC CDNBS08-T12C ................SDD CDNBS08-T15................... SDE CDNBS08-T15C ................ SDF CDNBS08-T24...................SDG CDNBS08-T24C ................SDH CDNBS08-T36...................SDN CDNBS08-T36C ................ SDP How to Order CD NBS08 - T 03 C Common Code Chip Diode Package NBS08 = Narrow Body SOIC8 Package Model T = Transient Voltage Suppressor Working Peak Voltage 03 = 3 VRWM (Volts) Suffix C = Bidirectional Diode Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. CDNBS08-T03~T36C - TVS Diode Array Series Performance Graphs Pulse Waveform Peak Pulse Power vs Pulse Time 120 IPP – Peak Pulse Current (% of IPP) PPP – Peak Pulse Power (W) 10,000 500 W, 8/20 µs Waveform 1,000 100 Test Waveform Parameters tt = 8 µs td = 20 µs tt 100 80 et 60 40 td = t|IPP/2 20 0 10 0.01 1 10 100 1,000 0 10,000 10 5 td – Pulse Duration (µs) Block Diagram Bidirectional 6 5 8 7 1 2 25 30 100 6 3 4 1 2 3 Peak Pulse Power 8/20 µs 5 % of Rated Power 7 20 Power Derating Curve Unidirectional 8 15 t – Time (µs) 4 80 60 40 20 Average Power 0 0 Device Pinout Pin Function 1 I/O 1 2 I/O 2 3 I/O 3 4 I/O 4 5 GND 6 GND 7 GND 8 GND 25 50 75 100 125 150 TL – Lead Temperature (°C) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. CDNBS08-T03~T36C - TVS Diode Array Series Packaging Information The product is packaged in tape and reel format per EIA-481 standard. P 0 P 1 d PART ORIENTATION T E Index Hole 120 ° F D2 W B PIN 1 D1 D P A Trailer ....... ....... End C Device ....... ....... 10 pitches (min.) ....... ....... Leader ....... ....... 10 pitches (min.) W1 Start DIMENSIONS: MM (INCHES) Direction of Feed Item Symbol NSOIC 8L Carrier Width A 6.7 ± 0.10 (0.264 ± 0.004) Carrier Length B 5.5 ± 0.10 (0.217 ± 0.004) Carrier Depth C 2.10 ± 0.10 (0.083 ± 0.004) Sprocket Hole d 1.55 ± 0.05 (0.061 ± 0.002) Reel Outside Diameter D 330 (12.992) Reel Inner Diameter D1 Feed Hole Diameter D2 13.0 ± 0.20 (0.512 ± 0.008) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 3.50 ± 0.05 (0.138 ± 0.002) Punch Hole Pitch P 8.00 ± 0.10 (0.315 ± 0.004) Sprocket Hole Pitch P0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P1 2.00 ± 0.05 (0.079 ± 0.002) Overall Tape Thickness T 0.20 ± 0.10 (0.008 ± 0.004) Tape Width W 12.00 ± 0.20 (0.472 ± 0.008) Reel Width W1 Quantity per Reel -- 80.0 MIN. (3.1500) 18.4 MAX. (0.724) 2500 Asia-Pacific: Tel: +886-2 2562-4117 Email: asiacus@bourns.com EMEA: Tel: +36 88 885 877 Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 Email: americus@bourns.com www.bourns.com REV. 08/19 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Legal Disclaimer Notice This legal disclaimer applies to purchasers and users of Bourns® products manufactured by or on behalf of Bourns, Inc. and P[ZHɉSPH[LZJVSSLJ[P]LS`¸)V\YUZ¹ Unless otherwise expressly indicated in writing, Bourns® products and data sheets relating thereto are subject to change ^P[OV\[UV[PJL
CDNBS08-T24C
物料型号: - CDNBS08-T03至CDNBS08-T36C

器件简介: - 这是一个TVS二极管阵列系列,用于浪涌和ESD保护应用,采用八引脚窄体SOIC封装。该系列产品提供从3V到36V的电压类型选择,包括单向和双向配置。Bourns®芯片二极管符合JEDEC标准,易于在标准拾放设备上操作,其扁平配置减少了滚动丢失。

引脚分配: - 1: I/O1 - 2: I/O2 - 3: I/O3 - 4: I/O4 - 5: GND - 6: GND - 7: GND - 8: GND

参数特性: - 工作温度范围:-55至+150°C - 存储温度范围:-55至+150°C - 最小击穿电压@1mA(VBR):3.3V至36V不等,具体取决于型号 - 工作峰值电压(VWM):3.0V至36.0V不等,具体取决于型号 - 最大钳位电压@1A(Vc):8.0V至51.0V不等,具体取决于型号 - 典型8/20μs钳位电压(Vc):10.9V@43A至76.8V@9A不等,具体取决于型号 - 最大漏电流@VWM:125μA至1μA不等,具体取决于型号 - 双向最大电容@0V, 1MHz(CJ(SD)):450pF至45pF不等,具体取决于型号

功能详解: - 该系列产品满足IEC 61000-4-2(ESD)、IEC 61000-4-4(EFT)和IEC 61000-4-5(浪涌)的要求,提供30kV最大ESD保护。 - 峰值脉冲功率(t=8/20μs):500W(单向设备) - 正向电压@100mA, 300μs方波:1.5V(单向设备)

应用信息: - 音频/视频输入 - RS-232、RS-422和RS-423数据线 - 便携电子设备 - 医疗传感器

封装信息: - 该产品采用符合RoHS的塑封JEDEC窄体SO-8封装,100%锡镀框架,重量约为15mg,阻燃等级为UL 94V-0。
CDNBS08-T24C 价格&库存

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CDNBS08-T24C
  •  国内价格 香港价格
  • 1+20.683571+2.67810
  • 10+18.6763010+2.41820
  • 100+16.23267100+2.10180
  • 250+14.92359250+1.93230
  • 1000+13.876321000+1.79670
  • 2500+12.916322500+1.67240
  • 10000+12.3054110000+1.59330

库存:0

CDNBS08-T24C
  •  国内价格 香港价格
  • 10000+10.1827910000+1.31847

库存:0

CDNBS08-T24C
  •  国内价格
  • 1+19.28331
  • 10+12.36735
  • 25+11.63507
  • 10000+11.47235

库存:0