CDNBS16-T24

CDNBS16-T24

  • 厂商:

    BOURNS(伯恩斯)

  • 封装:

    SOIC16_150MIL

  • 描述:

    CDNBS16-T24

  • 详情介绍
  • 数据手册
  • 价格&库存
CDNBS16-T24 数据手册
*R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features ■ ■ ■ ■ Applications Lead free device (RoHS Compliant*) Protects 8 lines Unidirectional & bidirectional configurations ESD protection ■ ■ ■ ■ Audio/video inputs RS-232, RS-422 & RS-423 data lines Portable electronics Medical sensors CDNBS16-T03~T36C – TVS Diode Array Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. UNIDIRECTIONAL Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD protection applications, in 16 Lead Narrow Body SOIC package size format. The Transient Voltage Suppressor Array series offer a choice of voltage types ranging from 3 V to 36 V in unidirectional and bidirectional configurations. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 Uni- Bi- BIDIRECTIONAL The Bourns device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge) requirements. ® Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Operating Temperature Storage Temperature Symbol Max. Unit TJ -55 to +150 °C TSTG -55 to +150 °C Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) CDNBS16Parameter Symbol Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Unit T03 T03C T05 T05C T08 T08C T12 T12C T15 T15C T24 T24C T36 T36C Minimum Breakdown Voltage @ 1 mA VBR 4.5 6.0 8.5 13.3 16.7 26.7 40.0 V Working Peak Voltage VWM 3.0 5.0 8.0 12.0 15.0 24.0 36.0 V VC 8.0 9.8 13.4 19.0 25.5 40.0 53.0 V VC 23 V @ 43 A 24 V @ 42 A 26 V @ 30 A 33 V @ 21 A 39 V @ 15 A 57 V @ 10 A 72 V @7A V ID 125 20 10 2 2 2 2 µA Maximum Clamping Voltage VC @ IP = 1 A1 Maximum Clamping Voltage @ 8/20 µs VC @ IPP1 Maximum Leakage Current @ VWM Maximum Capacitance @ 0 V, 1 MHz 15 C j(SD) Temperature Coefficient -3 of VBR 3 9 16 pF 17 26 36 mV/°C Peak Pulse Power (tp = 8/20 µs)2 PPP 500 W Forward Voltage @ 100 mA, 300 µs – Square Wave3 VF 1.5 V Notes: 1. See Pulse Wave Form. 2. See Peak Pulse Power vs. Pulse Time. 3. Only applies to unidirectional devices. 4. Part numbers with a “C” suffix are bidirectional devices, i.e., CDNBS16-T03C. *RoHS Directive 2002/95/EC Jan 27, 2003 including Annex. Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CDNBS16-T03~T36C – TVS Diode Array Series Mechanical Characteristics This is a molded JEDEC Narrow Body SO-16 package with lead free 100 % Sn plating on the lead frame. It weighs approximately 30 mg and has a flammability rating of UL 94V-0. Product Dimensions Recommended Footprint 9.80 - 10.00 (0.386 - 0.393) 16 1.27 TYP. (0.050) 0.76 ±0.13 (0.030 ±0.005) 9 3.80 - 4.00 (0.150 - 0.157) 1 5.80 - 6.20 (0.229 - 0.244) 8 4.06 ±0.13 (0.160 ±0.005) 6.22 MIN. (0.245) 1.27 (0.05) 1.35 - 1.75 (0.054 - 0.068) R x 45 ° 0°-7° 0.35 - 0.49 (0.014 - 0.019) 16 PLCS. 0.10 - 0.25 (0.004 - 0.009) 0.19 - 0.25 (0.008 - 0.009) 1.14 ±0.13 (0.045 ±0.005) 0.40 - 1.25 (0.016 - 0.049) How To Order DIMENSIONS = MILLIMETERS (INCHES) Typical Part Marking CDNBS16-T03 ............................................................CDNBS16-T03 CDNBS16-T05 ............................................................CDNBS16-T05 CDNBS16-T08 ............................................................CDNBS16-T08 CDNBS16-T12 ............................................................CDNBS16-T12 CDNBS16-T15 ............................................................CDNBS16-T15 CDNBS16-T24 ............................................................CDNBS16-T24 CDNBS16-T36 ............................................................CDNBS16-T36 CDNBS16-T03C ......................................................CDNBS16-T03C CDNBS16-T05C ......................................................CDNBS16-T05C CDNBS16-T08C ......................................................CDNBS16-T08C CDNBS16-T12C ......................................................CDNBS16-T12C CDNBS16-T15C ......................................................CDNBS16-T15C CDNBS16-T24C ......................................................CDNBS16-T24C CDNBS16-T36C ......................................................CDNBS16-T36C Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD NBS16 - T 03 C Common Code Chip Diode Package NBS16 = 16L NSOIC Package Model T = Transient Voltage Supressor Working Peak Reverse Voltage 03 = 3 VRWM (Volts) Suffix C = Bidirectional Diode CDNBS16-T03~T36C – TVS Diode Array Series Performance Graphs Peak Pulse Power vs Pulse Time Pulse Wave Form 120 IPP – Peak Pulse Current (% of IPP) PPP – Peak Pulse Current (W) 10,000 500 W, 8/20 µs Waveform 1,000 100 Test Waveform Parameters tt = 8 µs td = 20 µs tt 100 80 et 60 40 td = t|IPP/2 20 0 10 0.1 1 10 100 1,000 0 10,000 5 10 Block Diagram UNIDIRECTIONAL 80 15 2 14 13 3 4 12 11 5 6 10 7 % of Rated Power 100 1 20 25 30 Power Derating Curve The device block diagrams below include the pin names and basic electrical connections associated with each channel. 16 15 t – Time (µs) td – Pulse Duration (µs) 9 Peak Pulse Power 8/20 µs 60 40 20 8 Average Power BIDIRECTIONAL 16 15 14 13 12 0 11 10 0 9 25 50 75 100 TL – Lead Temperature (°C) 1 2 3 4 5 6 7 8 Device Pinout Pin Function Pin Function 1 GND 9 I/O 1 2 GND 10 I/O 2 3 GND 11 I/O 3 4 GND 12 I/O 4 5 GND 13 I/O 5 6 GND 14 I/O 6 7 GND 15 I/O 7 8 GND 16 I/O 8 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 125 150 CDNBS16-T03~T36C – TVS Diode Array Series Packaging Specifications The product will be dispensed in Tape and Reel format (see diagram below). P 0 P 1 d T E Index Hole 120 ° F D2 W B D1 D P Trailer A C Device Leader ....... ....... ....... ....... ....... ....... ....... ....... End W1 Start DIMENSIONS: 10 pitches (min.) 10 pitches (min.) Direction of Feed Item Symbol Carrier Width A Carrier Length B Carrier Depth C Sprocket Hole d Reel Outside Diameter D Reel Inner Diameter D1 Feed Hole Diameter D2 Sprocket Hole Position E Punch Hole Position F Punch Hole Pitch P Sprocket Hole Pitch P0 Embossment Center P1 Overall Tape Thickness T Tape Width W Reel Width W1 Quantity per Reel - NSOIC 16L 6.7 ± 0.10 (0.264 ± 0.004) 10.5 ± 0.10 0.413 ± 0.004 2.10 ± 0.10 0.083 ± 0.004 1.55 ± 0.05 (0.061 ± 0.002) 330 (12.992) 80.0 (3.1500) MIN. 13.0 ± 0.20 (0.512 ± 0.008) 1.75 ± 0.10 (0.069 ± 0.004) 3.50 ± 0.05 (0.138 ± 0.002) 8.00 ± 0.10 (0.315 ± 0.004) 4.00 ± 0.10 (0.157 ± 0.004) 2.00 ± 0.05 (0.079 ± 0.002) 0.20 ± 0.10 (0.008 ± 0.004) 16.00 ± 0.20 (0.630 ± 0.008) 18.4 (0.724) MAX. 2500 REV. 07/11 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. MM (INCHES) Devices are packed in accordance with EIA standard RS-481-A.
CDNBS16-T24
物料型号:CDNBS16-T03~T36C 器件简介:这是一系列瞬态电压抑制二极管阵列,用于浪涌和ESD保护应用,提供3V至36V的电压类型,包括单向和双向配置。

引脚分配:1-8为GND,9-16为I/O 参数特性:包括工作电压、最大钳位电压、最小击穿电压、最大漏电流、最大电容、温度系数等。

功能详解:器件符合IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) 和 IEC 61000-4-5 (Surge) 要求,保护8线路,适用于单向和双向配置。

应用信息:适用于音视频输入、RS-232、RS-422 & RS-423数据线、便携电子设备、医疗传感器等。

封装信息:采用16引脚窄体SOIC封装,无铅设备,符合RoHS标准。

封装尺寸和典型标记信息已提供。
CDNBS16-T24 价格&库存

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CDNBS16-T24
  •  国内价格 香港价格
  • 5000+14.356845000+1.85835

库存:0