PTVS10-058C-SH

Features Applications ■ 10 kA, 8/20 µs surge capability ■ High power DC bus protection ■ Low clamping voltage under surge ■ Bidirectional TVS ■ Surface mount package ■ Excellent performance over temperature PTVS10-xxxC-SH Series High Current TVS Diodes General Information Additional Information Click these links for more information: The PTVS10-xxxC-SH range of high current bidirectional TVS diodes is designed for use in high power DC bus clamping applications. These devices offer bidirectional port protection and are available with standoff voltage ratings of 58 V and 76 V. PRODUCT TECHNICAL INVENTORY SAMPLES SELECTOR LIBRARY The devices are RoHS* compliant. They also meet IEC 61000-4-5 8/20 μs current surge requirements. CONTACT Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Rating PTVS10-058C-SH PTVS10-076C-SH Repetitive Standoff Voltage Peak Current Rating per 8/20 μs IEC 61000-4-5 Symbol Value Unit VWM 58 76 V IPPM 10 kA Operating Junction Temperature Range TJ -55 to +125 °C Storage Temperature Range TS -55 to +150 °C Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter ID Standby Current V(BR) Breakdown Voltage VC Clamping Voltage (1) Test Conditions IBR = 10 mA PTVS10-058C-SH PTVS10-076C-SH IPP = 10 kA PTVS10-058C-SH PTVS10-076C-SH F = 10 kHz, Vd = 1 Vrms PTVS10-058C-SH PTVS10-076C-SH V(BR) Temperature Coefficient C Capacitance Min. Typ. VD = VWM 64 85 67 90 Max. Unit 10 μA 70 95 V 110 140 V 0.1 %/°C 8 6 nF (1) VC measured at the time which is coincident with the peak surge current. Asia-Pacific: Tel: +886-2 2562-4117 • Email: asiacus@bourns.com Europe: Tel: +36 88 885 877 • Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 • Email: americus@bourns.com www.bourns.com WARNING Cancer and Reproductive Harm - www.P65Warnings.ca.gov *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. PTVS10-xxxC-SH Series High Current TVS Diodes Product Dimensions This is a Pb free product, with epoxy encapsulations meeting UL Class 94V-0. Ag plated leads meet solderability requirements of JESD22-B102. Package dimensions are shown below. 18.60 ± 0.50 (.733 ± .020) 14.00 MAX. (.551) Recommended Printed Wiring Land Pattern Dimensions 3.5 (.138) 11.00 (.433) 14.50 (.571) MAX. 12.60 (.496) 10.00 ± 0.20 (.394 ± .008) DIMENSIONS: MM (INCHES) Typical Part Marking PTVS10-058C-SH .............................10058 PTVS10-076C-SH .............................10076 D How to Order 2.80 ± 0.20 (.110 ± .0008) Device MIN. 2.00 (.079) PTVS 10 - xxx C - S H 2.00 (.079) MIN. 0.50 ± 0.05 (.020 ± .002) Dimension D PTVS10-058C-SH 11.00 Max. (0.433) PTVS10-076C-SH 12.00 Max. (0.472) DIMENSIONS: MM (INCHES) Series PTVS = Power TVS High Current Diode Peak Current Rating 10 = 10 kA Repetitive Standoff Voltage 058 = 58 V 076 = 76 V Suffix C = Bidirectional Device Application Package S = Surface Mount A typical application for Power TVS products includes DC power line protection. Temperature H = High Temperature Series + Exposed DC Power Interface - Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. PTVS10-xxxC-SH Series High Current TVS Diodes Performance Graphs V-I Characteristic Typical VBR vs. Junction Temperature 16 Percent of VBR Change 14 12 10 8 6 25 °C 4 2 0 -4 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (TJ) - °C Typical Surge Current Derating Current 8/20 μs Waveform per IEC 61000-4-5 IPP – Peak Pulse Current (% of IPP) Percent of Rated Value 120 110 100 90 80 70 60 50 40 30 20 10 120 Test Waveform Parameters tt = 8 µs td = 20 µs tt 100 80 et 60 40 td = t|IPP/2 20 0 0 0 0 25 50 75 100 125 150 175 Ambient Temperature (°C) 5 10 15 20 25 30 t – Time (µs) This graph shows the typical device surge current derating versus ambient temperature when subjected to the 8/20 μs current waveform per the IEC 61000-4-5 specification. This device is not intended for continuous operation at temperatures above 125 °C. REV. 11/15 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Legal Disclaimer Notice This legal disclaimer applies to purchasers and users of Bourns® products manufactured by or on behalf of Bourns, Inc. and P[ZHɉSPH[LZJVSSLJ[P]LS`¸)V\YUZ¹ Unless otherwise expressly indicated in writing, Bourns® products and data sheets relating thereto are subject to change ^P[OV\[UV[PJL