PTVS10-320C-TH

Features Applications n Low clamping voltage under surge n High power DC bus protection n 10 kA, 8/20 µs surge capability n AC line protection n Bidirectional TVS n Excellent performance over temperature PTVS10-xxxC-TH Series High Voltage, High Current TVS Diodes General Information Additional Information Click these links for more information: The Model PTVS10-xxxC-TH high voltage, high current, bidirectional TVS diode series is designed for use in AC line and high power DC bus clamping applications. The devices are RoHS* compliant. They also meet IEC 61000-4-5 8/20 μs current surge requirements. PRODUCT TECHNICAL INVENTORY SELECTOR LIBRARY SAMPLES CONTACT Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Rating PTVS10-170C-TH PTVS10-320C-TH PTVS10-380C-TH PTVS10-430C-TH PTVS10-470C-TH Repetitive Standoff Voltage Peak Current Rating per 8/20 µs IEC 61000-4-5 Operating Junction Temperature Range Symbol Value Unit VWM 170 320 380 430 470 V IPPM 10 kA -55 to +125 °C -55 to +150 °C 260 °C TJ Storage Temperature Range TS Lead Temperature, Soldering (10 s) Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter ID Standby Current V(BR) Breakdown Voltage VC Clamping Voltage (1) Test Conditions VD = VWM IBR = 10 mA PTVS10-170C-TH PTVS10-320C-TH PTVS10-380C-TH PTVS10-430C-TH PTVS10-470C-TH IPP = 10 kA PTVS10-170C-TH PTVS10-320C-TH PTVS10-380C-TH PTVS10-430C-TH PTVS10-470C-TH F = 10 kHz, Vd = 1 Vrms PTVS10-170C-TH PTVS10-320C-TH PTVS10-380C-TH PTVS10-430C-TH PTVS10-470C-TH V(BR) Temperature Coefficient C Capacitance Min. 190 336 401 440 470 Typ. 200 352 422 465 500 Max. Unit 10 µA 210 368 442 490 530 V 260 440 520 580 630 V 0.1 %/°C 2.5 1.4 1.2 1.1 1.0 nF (1) V measured at the time which is coincident with the peak surge current. C WARNING Cancer and Reproductive Harm - www.P65Warnings.ca.gov *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.  PTVS10-xxxC-TH Series High Voltage, High Current TVS Diodes 16 14 Percent of VChange Percent of VBR BR Percent of VChange Change BR of Percent VBR Change Percent of VBR Change Performance Graphs V-I Characteristic 1612 1410 Typical VBR vs. Junction Temperature 16 12 8 1616 14 106 1414 25 °C 12 8124 12 10 6102 8 10 25 °C 80 684 25 °C 6 462-4 25 °C 4 25 °C 2 0-6 42 0-4-8 2 0 -40 -20 0 20 40 60 80 100 120 140 160 -4-6 0-4 Junction Temperature (TJ) - °C -6 -8 -4-6-40 -20 0 20 40 60 80 100 120 140 160 -8 -8 -20 0 20 40 60 80 100 120 140 160 -6-40 -40 -20Junction 0 20 Temperature 40 60 80 100 140 160 (TJ120 ) - °C -8 Junction Temperature (TJ) - °C -40 -20 Junction 0 20 Temperature 40 60 80(T100 120 140 160 J) - °C + + + 120 Test Waveform Parameters tt = 8 µs td = 20 µs TestTest Waveform Parameters Waveform Parameters Parameters 8etttµs tt =Test =Waveform 8 µs td =tt 20 t=d 8=µsµs 20 µs Current 8/20 µs Waveform tt per IEC 61000-4-5 100 120 120 120 80 100 100 100 60 120 8080 80 40 100 60 6060 20 40 80 4040 0 20 60 2020 0 0 4000 0 0 Percent of Rated Value Percent of Rated Value Percent Percent of RatedofValue Rated Percent ofValue Rated Value IPP –Current Peak Pulse Current (% of of IIPP PP) IPP – Peak IPulse (%Current of IPP) (% PP – Peak Pulse ) – Peak Pulse IPP – PeakIPP Pulse Current (%Current of IPP) (% of IPP) Junction Temperature (TJ) - °C 120 110 Typical Surge Current Derating 100 120 120 90 110120 110 80 100110 100 100 70 120 90 90 90 60 80 110 80 80 70 50 100 70 70 60 40 90 60 60 50 8030 50 40 50 7020 40 40 30 6010 30 30 20 50 0 20 10 20 50 75 100 125 150 175 10 25 40 0 10 0 Ambient Temperature (°C) 30 25 50 75 100 125 150 175 00 0 25 50 75 100 125 150 175 0 20 0 Ambient Temperature (°C) 150 25 50 75 100 125 175 Ambient Temperature (°C) 10 Ambient Temperature (°C) This graph shows the typical device surge current derating 0 versus ambient temperature when subjected to the 8/20 µs 25 50 75 100 125 150 175 0 current waveform per the IEC 61000-4-5 specification. Ambient Temperature (°C) This device is not intended for continuous operation at temperatures above 125 °C. 20 0 t t tt tt td = 20 µs et etTest Waveform Parameters et tt = 8 µs tt td = t|IPP/2 td = 20 µs td = t|IPP et/2 tdtd==t|tI|PPIPP /2/2 5 5 55 10 15 20 t – Time (µs) 5 Under 0 10 Surge 15 Typical Waveform 20 30 Current Current Current Current Voltage Voltage Voltage Current Voltage Interface - 25 t – Time (µs) Exposed Exposed DCExposed DC DC Power Power Exposed Power Interface Interface DC ers as set forth on the last page of this document, and at www.bourns.com/docs/legal/ disclaimer.pdf. 30 t – Time (µs) 0 ++ Power Exposed Interface - - - DC Specifications are subject to change without notice. Power Users should verify actual device performance in their specific applications. The products described herein and document are subject to specific legal disclaim- this Interface 25 t – Time (µs) 10 25 30 td =15t|IPP/2 20 10 15 20 10 20 25 25 30 30 t – Time 15 (µs) Voltage 00 0 0 10 10 10 10 20 20 30 30 20 30 t – Time (µs) t – Time (µs) t – Time (µs) 20 30 t – Time (µs) 40 40 40 40 50 50 50 50 PTVS10-xxxC-TH Series High Voltage, High Current TVS Diodes Product Dimensions Epoxy encapsulation materials conform to UL 94V-0. Silver plated lead finish conforms to the solderability requirements of JESD22-B102, Pb free solder. Package dimensions are shown below: F G D C H MM DIMENSIONS: (INCHES) E B A Dim. PTVS10-170C-TH PTVS10-320C-TH 8.80 Max. (0.346) 14.60 Max. (0.575) A B C D E F G H PTVS10-380C-TH 24.15 ± 0.72 (0.951 ± 0.028) 2.40 ± 0.50 (0.094 ± 0.020) 1.75 ± 1.25 (0.069 ± 0.049) 15.00 Max. (0.591) 1.25 ± 0.05 (0.049 ± 0.002) 14.00 Max. (0.551) 16.50 Max. (0.650) 6.00 ± 1.00 (0.236 ± 0.039) Typical Part Marking PTVS10-170C-TH....................................................................10170 PTVS10-320C-TH....................................................................10320 PTVS10-380C-TH....................................................................10380 PTVS10-430C-TH....................................................................10430 PTVS10-470C-TH....................................................................10470 PTVS10-430C-TH PTVS10-470C-TH 16.50 Max. (0.650) 19.40 Max. (0.764) How to Order PTVS 10 - 380 C - T H Series PTVS = Power TVS High Current Diode Peak Current Rating 10 = 10 kA Repetitive Standoff Voltage 170 = 170 V 320 = 320 V 380 = 380 V 430 = 430 V 470 = 470 V Suffix C = Bidirectional Device Package T = Through-Hole Temperature H = High Temperature Series REV. 11/15 Specifications are subject to change without notice. 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