PTVS3-058C

PL IA N T Features The PTVS3-xxxC Series is currently available, but not recommended for new designs. The PTVSx-xxxC-TH Series is recommended. CO M ■ 3 kA, 8/20 µs surge capability *R oH S ■ Low clamping voltage under surge ■ Bidirectional TVS Applications ■ UL Recognized ■ AC line protection ■ High power DC bus protection PTVS3-xxxC Series High Current TVS Diodes General Information Agency Approval The PTVS3-xxxC range of high current bidirectional TVS diodes is designed for use in AC line protection and high power DC bus clamping applications. These devices offer bidirectional port protection from 58 volts to 430 volts. Description UL File Number: E313168 The devices are RoHS* and UL compliant while also meeting IEC 61000-4-5 8/20 µs current surge requirements. Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Rating Symbol Value Unit VWM 58 66 76 380 430 V IPPM 3 kA Operating Junction Temperature Range TJ -55 to +150 °C Storage Temperature Range TS -55 to +150 °C 260 °C PTVS3-058C PTVS3-066C PTVS3-076C PTVS3-380C PTVS3-430C Repetitive Standoff Voltage Peak Current Rating per 8/20 µs IEC 61000-4-5 Lead Temperature, Soldering (10 s) Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter ID Standby Current V(BR) Breakdown Voltage VC Clamping Voltage Test Conditions IBR = 10 mA PTVS3-058C PTVS3-066C PTVS3-076C PTVS3-380C PTVS3-430C IPP = 3 kA PTVS3-058C PTVS3-066C PTVS3-076C PTVS3-380C PTVS3-430C F = 10 kHz, Vd = 1 Vrms PTVS3-058C PTVS3-066C PTVS3-076C PTVS3-380C PTVS3-430C V(BR) Temperature Coefficient C Capacitance Min. Typ. Max. Unit 10 µA 66 77 92 420 470 70 82 95 443 490 V 85 100 110 510 560 100 120 130 570 620 V VD = VWM 64 72 85 401 440 0.1 2.0 1.7 1.5 0.7 0.6 *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. %/°C 2.3 2.2 2.0 1.2 1.0 nF 3312 - 2 mm SMD Trimming Potentiometer PTVS3-xxxC Series High Current TVS Diodes Product Dimensions The product is epoxy encapsulated per UL Class 94V-0 with Ag plated leads solderable per MIL-STD-750, Method 2026. The package dimensions and part marking are shown below. G Dim. F PTVS3058C A B D H C D C E F G B E A 5.0 (0.20) Max. H PTVS3066C PTVS3PTVS3076C 380C 24.15 ± 0.72 (0.950 ± 0.028) 2.40 Typ. (0.094) 15.0 Min. (0.59) 10.5 Max. (0.413) 1.25 ± 0.05 (0.049 ± 0.002) 10.5 Max. (0.413) 5.0 6.0 17.0 (0.67) (0.24) (0.20) Max. Max. Max. 6.60 Max. (0.26) DIMENSIONS: Typical Part Marking PTVS3-058C .............................................................................3058 PTVS3-066C .............................................................................3066 PTVS3-076C .............................................................................3076 PTVS3-380C .............................................................................3380 PTVS3-430C .............................................................................3430 Application A typical application for Power TVS products includes AC power line primary protection. PTVS3430C 17.0 (0.67) Max. MM (INCHES) How to Order PTVS 3 - xxx C Series PTVS = Power TVS High Current Diode Peak Current Rating 3 = 3 kA Repetitive Standoff Voltage 058 = 58 V 066 = 66 V 076 = 76 V 380 = 380 V 430 = 430 V Suffix C = Bidirectional Device Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 3312 - 2 mmSeries SMD High Trimming Potentiometer PTVS3-xxxC Current TVS Diodes Performance Graphs V-I Characteristic Typical VBR vs. Junction Temperature 16 VI Characteristic +i 14 IPPM VC V (BR) IT ID V WM -v +v ID IT V WM V (BR) VC Percent of VBR Change Quadrant I 12 10 8 6 25 °C 4 2 0 -4 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160 IPPM Quadrant III Junction Temperature (TJ) - °C -i Typical Peak Power Derating Percent of Rated Value 120 100 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature (°C) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. PTVS3-xxxC Series High Current TVS Diodes Performance Graphs (Continued) Surge Response (1.2/50, 8/20 Surge) - PTVS3-058C 120 3 120 2.5 100 2.5 100 Voltage 1.5 60 1 40 0.5 20 2 Current (kA) 80 2 Voltage (V) 3 1.5 60 1 40 0.5 20 0 0 -20 -0.5 0 4 8 12 16 20 24 28 32 36 0 0 -0.5 -20 0 40 8 4 12 16 20 24 28 32 36 40 Time (µs) Time (µs) Surge Response - PTVS3-380C Surge Response (1.2/50, 8/20 Surge) - PTVS3-380C 3.5 3.5 3.0 3.0 2.5 2.5 2.0 2.0 Current (A) Current (kA) 80 Voltage Voltage (V) Current Current Current (kA) 140 3.5 140 T 1.5 1.0 700 600 Current 500 400 Voltage 1.5 300 1.0 200 0.5 100 Voltage (V) 3.5 Surge Response (1.2/50, 8/20 Surge) - PTVS3-076C 0.5 0 0 0 -0.5 -100 0 -0.5 0 200 400 10 5 15 20 600 25 30 35 40 Time (µs) Voltage (V) Surge Response - PTVS3-430C Surge Response (1.2/50, 8/20 Surge) - PTVS3-430C 3.5 3.5 3.0 3.0 600 2.0 1.5 2.5 500 2.0 400 1.5 300 Voltage 1.0 200 1.0 0.5 100 0.5 0 0 -0.5 0 -100 0 -0.5 0 100 200 300 400 500 600 Voltage (V) Current (kA) Current 2.5 Current (kA) 700 10 20 30 40 50 Time (µs) REV. 01/14 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.