PTVS3-380C-TH

Features Applications n Low clamping voltage under surge n High power DC bus protection n 3 kA, 8/20 µs surge capability n AC line protection n Bidirectional TVS n Excellent performance over temperature PTVS3-xxxC-TH Series High Voltage, High Current TVS Diodes General Information Additional Information Click these links for more information: The Model PTVS3-xxxC-TH high voltage, bidirectional TVS diode series is designed for use in AC line and high power DC bus clamping applications. The devices are RoHS* compliant. They also meet IEC 61000-4-5 8/20 μs current surge requirements. PRODUCT TECHNICAL INVENTORY SAMPLES SELECTOR LIBRARY CONTACT Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Rating PTVS3-380C-TH PTVS3-430C-TH Repetitive Standoff Voltage Peak Current Rating per 8/20 µs IEC 61000-4-5 Symbol Value Unit VWM 380 430 V IPPM Operating Junction Temperature Range TJ Storage Temperature Range TS Lead Temperature, Soldering (10 s) 3 kA -55 to +125 °C -55 to +150 °C 260 °C Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter ID Standby Current V(BR) Breakdown Voltage VC Clamping Voltage (1) V(BR) Temperature Coefficient C Capacitance Test Conditions VD = VWM IBR = 10 mA PTVS3-380C-TH PTVS3-430C-TH IPP = 3 kA PTVS3-380C-TH PTVS3-430C-TH F = 10 kHz, Vd = 1 Vrms PTVS3-380C-TH PTVS3-430C-TH Min. Typ. Max. Unit 10 µA 401 440 422 465 443 490 V 520 580 V 0.1 %/°C 0.35 0.40 nF (1) V measured at the time which is coincident with the peak surge current. C WARNING Cancer and Reproductive Harm - www.P65Warnings.ca.gov * RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.  PTVS3-xxxC-TH Series High Voltage, High Current TVS Diodes 16 14 Performance Graphs of VBR Change Percent ofPercent VChange Percent of VBR BR Percent of VChange BR Change 1216 Typical V BR vs. Junction Temperature 1014 16 812 1616 14 61014 14 12 25 °C 4 812 12 10 28610 10 25 °C 064 8 8 25 °C 6 -4462 25 °C 4 25 °C -6240 2 -80-4 20 -40 -20 0 20 40 60 80 100 120 140 160 -4-6 0-4 -6 Junction Temperature (TJ) - °C -8 -4-6 20 40 60 80 100 120 140 160 -8 -40 -20 0 -8 -20 0 20 40 60 80 100 120 140 160 -6-40 -40 -20Junction 0 20 Temperature 40 60 80 100 140 160 (TJ120 ) - °C Percent of VBR Change V-I Characteristic -8 Junction Temperature (TJ) - °C -40 -20 Junction 0 20 Temperature 40 60 80(T100 120 140 160 J) - °C Junction Temperature (TJ) - °C 90 40 60 80 30 50 70 20 40 60 10 30 50 020 400 10 30 0 20 0 10 0 0 25 tt 100 120 120 120 80 100 100 100 60 120 8080 80 40 100 60 6060 20 40 80 4040 20 0 60 2020 0 0 4000 0 IPP – Peak Pulse Current (% of IPP) 110120 110 100 100 90 90 80 80 70 70 60 60 50 40 50 40 30 30 20 10 20 1025 0 00 0 IPP –Pulse Peak Pulse Current IPP –Current Peak Current (% of of IIPP PP(% )) of IPP) IPP – Peak IPulse (%Current of IPP) (% PP – Peak Pulse 90 110 80 100 120 7090 110 6080 100 5070 120 Parameters Current 8/20 µs Waveform per Test IECWaveform 61000-4-5 Percent of Rated Value Percent of Rated Value Percent of Rated Percent Percent of Rated ofValue Rated Value Value 120 Typical Surge Current Derating 110 100 120 120 50 25 25 75 100 125 150 50 75 100 (°C) 125 Ambient Temperature 50 75 100 125 150 150 Ambient Temperature (°C) 150 75 100 125 Ambient Temperature (°C) 50 175 175 175 175 Ambient Temperature (°C) 20 t t tt tt - td = t|IPP = 20 µs td /2 td = t|IPP et/2 tdtd==t|tI|PPIPP /2/2 5 00 5 10 55 15 20 25 30 10 20 25 30 ttd–=15Time t|IPP/2(µs) 10 15 20 10 20 25 25 30 30 t – Time 15 (µs) t – Time (µs) t – Time (µs) 0 5 0 10 Typical Waveform Under Surge 15 20 25 30 t – Time (µs) Current + + + + Exposed Exposed disclaimer.pdf. td = 20 µs et etTest Waveform Parameters et tt = 8 µs tt This graph shows the typical device surge current derating versus when 25 ambient 50 temperature 75 100 subjected 125 to the 1508/20 µs 175 current waveform per theTemperature IEC 61000-4-5 specification. Ambient (°C) This device is not intended for continuous operation at temperatures above 125 °C. DC Exposed DC DC Power Power Exposed + Power Interface Interface DC Interface Power Exposed -Interface Specifications are subject to change without - DCnotice. Users should verify actual device performance in their specific applications. Power The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of Interfaceand at www.bourns.com/docs/legal/ - this document, tt = 8 µs td = 20 µs TestTest Waveform Parameters Waveform Parameters Parameters 8ttµs tet t=Test =Waveform 8 µs t = 8 µs t td = 20 td =µs20 µs Voltage 0 10 20 30 t – Time (µs) 40 50  PTVS3-xxxC-TH Series High Voltage, High Current TVS Diodes Product Dimensions Epoxy encapsulation materials conform to UL 94V-0. Silver plated lead finish conforms to the solderability requirements of JESD22-B102, Pb free solder. Package dimensions are shown below: G Dim. F A B D C C D H E B E A MM DIMENSIONS: (INCHES) F G H Typical Part Marking PTVS3-380C-TH........................................................................3380 PTVS3-430C-TH........................................................................3430 PTVS3-380C-TH PTVS3-430C-TH 24.15 ± 0.72 (0.951 ± 0.028) 2.40 ± 0.50 (0.094 ± 0.020) 1.75 ± 1.25 (0.069 ± 0.049) 10.80 Max. (0.425) 1.25 ± 0.05 (0.049 ± 0.002) 9.30 Max. (0.366) 16.50 Max. (0.650) 6.00 ± 1.00 (0.236 ± 0.039) How to Order PTVS 3 - 380 C - T H Series PTVS = Power TVS High Current Diode Peak Current Rating 3 = 3 kA Repetitive Standoff Voltage 380 = 380 V 430 = 430 V Suffix C = Bidirectional Device Package T = Through-Hole Temperature H = High Temperature Series REV. 04/17 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. 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