PTVS6-066C-M

T PL IA N OM Features Applications n 6 kA, 8/20 µs surge capability n High power DC bus protection *R oH S C n Low clamping voltage under surge n Bidirectional TVS n Surface mount package LE AD F RE E n Excellent overtemperature performance PTVS6-xxxC-M Series High Current TVS Diodes General Information Ro VE LEA HS RS D C ION FRE OM S E PL AR IA E NT * Bourns® Model PTVS6-xxxC-M high current bidirectional TVS diodes are designed for use in high power DC bus clamping applications. These devices offer bidirectional port protection and are available with standoff voltage ratings of 66 V and 76 V. The devices are RoHS* compliant and are designed to meet IEC 61000-4-5 8/20 μs current surge requirements. Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Rating PTVS6-066C-M PTVS6-076C-M Repetitive Standoff Voltage Peak Current Rating per 8/20 µs IEC 61000-4-5 Operating Junction Temperature Range Symbol Value Unit VWM 66 76 V IPPM 6 kA -55 to +125 °C -55 to +150 °C TJ Storage Temperature Range TS Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter ID Standby Current Test Conditions VD = VWM V(BR) Breakdown Voltage IBR = 10 mA PTVS6-066C-M PTVS6-076C-M VC IPP = 6 kA PTVS6-066C-M PTVS6-076C-M F = 10 kHz, Vd = 1 Vrms PTVS6-066C-M PTVS6-076C-M Clamping Voltage V(BR) Temperature Coefficient C Capacitance Min. 72 85 Typ. 76 90 Max. Unit 10 µA 80 95 V 120 135 V 0.1 %/°C 4.1 3.3 nF Asia-Pacific: Tel: +886-2 2562-4117 • Email: asiacus@bourns.com EMEA: Tel: +36 88 520 390 • Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 • Email: americus@bourns.com www.bourns.com *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.  PTVS6-xxxC-M Series High Current TVS Diodes Performance Graphs Typical VBR vs. Junction Temperature Normalized to 25 °C 6 4 2 0 -2 -4 -6 -8 -10 -12 -40 -20 0 20 40 12 10 8 VBR Change vs. Temperature (%) 12 10 8 VBR Change vs. Temperature (%) V-I Characteristic Normalized to 25 °C 6 4 2 0 -2 -4 -6 -8 60 80 -10 100 120 -20 0 -12(°C) Junction Temperature -40 Percent of Rated Value Percent of Rated Value 120 110 100 90 80 70 60 50 40 30 20 25 50 75 100 125 150 175 10 Ambient Temperature (°C) 0 25 versus 50 75 0 derating This graph shows the typical device surge current ambient temperature when subjected to the 8/20 µs current waveform Ambient per the IEC 61000-4-5 specification. This device is not intended for continuous operation at temperatures above 125 °C. Application 120 80 60 40 125 Exposed DC Power Interface 0 5 150 175 10 15 8 80 40 + Exposed DC Power Interface Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. td = t|IPP/2 20 20 t – Time (µs)0 Temperature (°C) - 60 Test Wave tt = 8 µs td = 20 µs 100 + A typical application for Power TVS products includes DC power line protection. 40 td = t|IPP/2 60 20 0 100 Test Waveform Parameters tt = 8 µs td = 20120 µs 100 IPP – Peak Pulse Current (% of IPP) 120 110 100 90 80 70 60 50 40 30 20 10 0 0 20 Junction Temperature ( Current 8/20 µs Waveform per IEC 61000-4-5 IPP – Peak Pulse Current (% of IPP) Typical Surge Current Derating 140 0 25 5 30 10 15 t – Time (µs) 2  PTVS6-xxxC-M Series High Current TVS Diodes Product Dimensions Recommended Pad Layout This is an RoHS compliant*, molded package with 100 % Sn on the terminations, and a flammability rating ofE UL 94-V-0. E 5.33 (0.210) 1.35 5.33 (0.053) (0.210) 1.35 (0.053) 2.54 (0.100) D D 3.51 (0.138) E1 10.80 (0.425) 3.51 (0.138) 18.31 (0.721) E1 13.72 10.80 (0.540) (0.425) 13.72 (0.540) 18.31 (0.721) DIMENSIONS: A 2.54 (0.100) MM (INCHES) A C L C L PTVS6-066C-M......................................................................... 6066 PTVS6-076C-M......................................................................... 6076 b b b1 b1 L1 L1 L2 L2 Dim. A b b1 C D E E1 L L1 L2 Min. 6.94 (0.273) 5.15 (0.203) 10.55 (0.415) 0.37 (0.015) 13.45 (0.530) 17.85 (0.703) 15.50 (0.610) 2.30 (0.091) 3.35 (0.132) 13.16 (0.518) Typical Part Marking How to Order PTVS 6 - xxx C-M Series PTVS = Power TVS High Current Diode Peak Current Rating 6 = 6 kA Max. 7.24 (0.285) 5.65 (0.222) 11.05 (0.435) 0.45 (0.018) 14.60 (0.575) 18.72 (0.737) 16.05 (0.632) 2.80 (0.110) 3.75 (0.148) 13.76 (0.518) Repetitive Standoff Voltage 066 = 66 V 076 = 76 V Suffix C = Bidirectional Device M = Surface Mount Mold flash or protrusion shall not exceed 0.25 mm. DIMENSIONS: MM (INCHES) *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.  PTVS6-xxxC-M Series High Current TVS Diodes Packaging Information The product will be dispensed in tape and reel format (see diagram below). 2.00 ± 0.10 (.079 ± .004) 4.00 ±0.10 (.157 ± .004) 1.50 +0.1/-0 DIA. (.059 +.004/-0) 20.00 ± 0.10 (.787 ± .004) 1.75 ± 0.10 (.069 ± .004) 14.20 ± 0.10 (.559 ± .004) 32.00 ± 0.30 (1.260 ± .012) 18.95 (.746) 28.40 ± 0.10 (1.118 ± .004) 8.00 (.315) 14.20 (.559) 17.80 (.701) 2.00 DIA. (.079) 7.45 (.039) DIMENSIONS: MM (INCHES) USER DIRECTION OF FEED 400 PCS. PER REEL 330.0 ± 1.5 DIA. (12.992 ± .059) 38.40 (1.512) MAX. 2.2 ± 0.2 (.087 ± .008) SEE DETAIL A 13.0 +0.5/-0.2 (.512 +.020/-.008) DIA. 17.2 ± 0.2 (.677 ± .008) DETAIL A 03/17 32.40 + 2.00/-0 (1.276 ±.079/-.0) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 100.0 ± 1.5 (3.937 ± .059) DIA.