PTVS6-076C-TH

PTVS6-076C-TH

  • 厂商:

    BOURNS(伯恩斯)

  • 封装:

    插件

  • 描述:

  • 详情介绍
  • 数据手册
  • 价格&库存
PTVS6-076C-TH 数据手册
Features Applications ■ 6 kA, 8/20 µs surge capability ■ High power DC bus protection ■ Low clamping voltage under surge ■ Bidirectional TVS ■ Excellent performance over temperature PTVS6-xxxC-TH Series High Current TVS Diodes General Information Additional Information Click these links for more information: The Model PTVS6-xxxC-TH Series high current bidirectional TVS diodes are designed for use in high power DC bus clamping applications. These devices offer bidirectional port protection and are available with standoff voltage ratings of 58 V and 76 V. PRODUCT TECHNICAL INVENTORY SAMPLES SELECTOR LIBRARY The devices are RoHS* compliant. They also meet IEC 61000-4-5 8/20 μs current surge requirements. CONTACT Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Rating PTVS6-058C-TH PTVS6-076C-TH Repetitive Standoff Voltage Peak Current Rating per 8/20 μs IEC 61000-4-5 Symbol Value Unit VWM 58 76 V IPPM 6 kA Operating Junction Temperature Range TJ -55 to +125 °C Storage Temperature Range TS -55 to +150 °C 260 °C Lead Temperature, Soldering (10 s) Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter ID Standby Current V(BR) Breakdown Voltage VC Clamping Voltage (1) per IEC61000-4-5 (8/20 μs current waveform) Test Conditions IBR = 10 mA PTVS6-058C-TH PTVS6-076C-TH IPP = 6 kA PTVS6-058C-TH PTVS6-076C-TH F = 10 kHz, Vd = 1 Vrms PTVS6-058C-TH PTVS6-076C-TH V(BR) Temperature Coefficient C Capacitance Min. Typ. VD = VWM 64 85 66 92 Max. Unit 10 μA 70 95 V 110 140 V 0.1 %/°C 4.5 3.3 nF (1) V measured at the time which is coincident with the peak surge current. C Asia-Pacific: Tel: +886-2 2562-4117 • Email: asiacus@bourns.com Europe: Tel: +36 88 885 877 • Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 • Email: americus@bourns.com www.bourns.com WARNING Cancer and Reproductive Harm - www.P65Warnings.ca.gov *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. PTVS6-xxxC-M Series High Current TVS Diodes Performance Graphs Percentage VBR Change vs. Junction Temperature VBR Change vs. Temperature (%) V-I Characteristic 12 10 8 Normalized to 25 °C 6 4 2 0 -2 -4 -6 -8 -10 -12 -40 -20 0 20 40 -60 -80 100 120 140 Junction Temperature (°C) Percent of Rated Value 120 110 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 Ambient Temperature (°C) This graph shows the typical device surge current derating versus ambient temperature when subjected to the 8/20 μs current waveform per the IEC 61000-4-5 specification. This device is not intended for continuous operation at temperatures above 125 °C. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. PTVS6-xxxC-M Series High Current TVS Diodes Product Dimensions Epoxy encapsulation materials conform to UL 94V-0. Silver plated lead finish conforms to the solderability requirements of JESD22-B102, Pb free solder. Package dimensions are shown below: G Dim. F A B D C C D H E B E A DIMENSIONS: MM (INCHES) F G H Typical Part Marking PTVS6-058C-TH ........................................................................ 6058 PTVS6-076C-TH ........................................................................ 6076 PTVS6-058C-TH PTVS6-076C-TH 24.15 ± 0.72 (0.951 ± 0.028) 2.40 ± 0.50 (0.094 ± 0.020) 1.75 ± 1.25 (0.069 ± 0.049) 12.00 Max. (0.472) 1.25 ± 0.05 (0.049 ± 0.002) 11.50 Max. (0.453) 5.00 6.00 Max. Max. (0.236) (0.197) 6.00 ± 1.00 (0.236 ± 0.039) How to Order PTVS 6 - 076 C - T H Series PTVS = Power TVS High Current Diode Peak Current Rating 6 = 6 kA Repetitive Standoff Voltage 058 = 58 V 076 = 76 V Suffix C = Bidirectional Device Package T = Through-Hole Temperature H = High Temperature Series REV. 11/15 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Legal Disclaimer Notice This legal disclaimer applies to purchasers and users of Bourns® products manufactured by or on behalf of Bourns, Inc. and P[ZHɉSPH[LZJVSSLJ[P]LS`¸)V\YUZ¹ Unless otherwise expressly indicated in writing, Bourns® products and data sheets relating thereto are subject to change ^P[OV\[UV[PJL
PTVS6-076C-TH
物料型号:PTVS6-xxxC-TH 器件简介:PTVS6-xxxC-TH系列高电流双向TVS二极管,用于高功率直流总线钳位应用,提供双向端口保护,具有58V和76V的隔离电压等级。

引脚分配:未提供 参数特性: - 重复隔离电压:PTVS6-058C-TH为58V,PTVS6-076C-TH为76V - 峰值电流额定值:6kA,符合IEC 61000-4-5 8/20μs电流冲击要求 - 工作结温范围:-55至+125°C - 存储温度范围:-55至+150°C - 引脚焊接温度(10s):260°C - 待机电流:在隔离电压下为10μA - 击穿电压:PTVS6-058C-TH为66至95V,PTVS6-076C-TH为64至85V - 钳位电压:在6kA峰值电流下,PTVS6-058C-TH为110V,PTVS6-076C-TH为140V - 电容:PTVS6-058C-TH为4.5nF,PTVS6-076C-TH为3.3nF 功能详解:提供低钳位电压下的浪涌保护,符合RoHS标准,满足IEC 61000-4-5 8/20μs电流冲击要求。

应用信息:用于高功率直流总线保护。

封装信息:封装形式为通孔(Through-Hole),符合UL 94V-0的环氧树脂封装材料,符合JESD22-B102无铅焊料的银镀引脚表面处理。


以上信息摘自Bourns的PDF文档,具体应用时请参考最新的产品规格书。
PTVS6-076C-TH 价格&库存

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PTVS6-076C-TH
  •  国内价格
  • 1+224.25812
  • 2+212.07474
  • 5+211.99072
  • 50+205.77300
  • 200+203.84046

库存:0