TIC106S-S

TIC106 SERIES SILICON CONTROLLED RECTIFIERS 5 A Continuous On-State Current 30 A Surge-Current TO-220 PACKAGE (TOP VIEW) Glass Passivated Wafer 400 V to 800 V Off-State Voltage K 1 Max IGT of 200 µA A 2 G 3 This series is obsolete and not recommended for new designs. Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL Repetitive peak off-state voltage (see Note 1) TIC106M TIC106S VDRM E T E L O S B O TIC106N TIC106D Repetitive peak reverse voltage Continuous on-state curr ent at (or below) 80°C case temperature (see Note 2) TIC106M TIC106S TIC106N Average on-state current (180° conduction angle) at (or below) 80°C case temperature (see Note 3) Surge on-state current at (or below) 25°C (see Note 4) Peak positive gate current (pulse width ≤ 300 µs) Peak gate power dissipation (pulse width ≤ 300 µ s) Average gate power dissipation (see Note 5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds VALUE UNIT 400 TIC106D VRRM IT(RMS) IT(AV) ITSM 600 700 800 400 600 700 800 V 5 A 3.2 A 30 IGM 0.2 PG(AV) 0.3 PGM V A A 1.3 W TC -40 to +110 °C TL 230 °C Tstg -40 to +125 W °C NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ. 2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate linearly to zero at 110°C. 4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 20 ms. APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIC106 SERIES SILICON CONTROLLED RECTIFIERS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER IDRM IRRM IGT VGT IH Repetitive peak off-state current Repetitive peak reverse current Gate trigger current Gate trigger voltage Holding current TEST CONDITIONS MIN TYP VT dv/dt NOTE voltage Critical rate of rise of off-state voltage RGK = 1 kΩ TC = 110°C 400 µA VR = rated VRRM IG = 0 TC = 110°C 1 mA VAA = 12 V RL = 100 Ω tp(g) ≥ 20 µs 200 µA VAA = 12 V RL = 100 Ω TC = - 40°C tp(g) ≥ 20 µs RGK = 1 kΩ VAA = 12 V RL = 100 Ω tp(g) ≥ 20 µs RGK = 1 kΩ VAA = 12 V RL = 100 Ω tp(g) ≥ 20 µs RGK = 1 kΩ VAA = 12 V RGK = 1 kΩ 5 1.2 0.4 TC = 110°C 0.6 IT = 5 A TC = - 40°C 8 mA RGK = 1 kΩ 5 (See Note 6) 1.7 E T E L O S B O VD = rated VD RGK = 1 kΩ V 0.2 Initiating IT = 10 mA VAA = 12 V 1 TC = 110°C 10 V V/µs 6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. thermal characteristics PARAMETER RθJC Junction to case thermal resistance RθJA Junction to free air thermal resistance MIN
 2 UNIT VD = rated VDRM Initiating IT = 10 mA Peak on-state MAX TYP MAX UNIT 3.5 °C/W 62.5 °C/W  
 APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIC106 SERIES SILICON CONTROLLED RECTIFIERS THERMAL INFORMATION AVERAGE ANODE ON-STATE CURRENT ANODE POWER DISSIPATED vs ON-STATE CURRENT TI20AA 6 TJ = 110°C Continuous DC 5 4 Φ = 180º 3 2 0° Angle 0 30 10 E T E L O S B O 180° Φ Conduction 1 1 40 50 60 70 80 90 100 110 1 10 100 TC - Case Temperature - °C IT - On-State Current - A Figure 1. Figure 2. SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION TRANSIENT THERMAL RESISTANCE vs CYCLES OF CURRENT DURATION TI20AC 100 10 RθJC(t) - Transient Thermal Resistance - °C/W TC ≤ 80 °C ITM - Peak Half-Sine-Wave Current - A TI20AB 100 PA - Anode Power Dissipated - W IT(AV) - Maximum Average Anode Forward Current - A DERATING CURVE No Prior Device Conduction Gate Control Guaranteed 10 1 TI20AD 1 0·1 1 10 100 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles Consecutive 50 Hz Half-Sine-Wave Cycles Figure 3. Figure 4.
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 APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIC106 SERIES SILICON CONTROLLED RECTIFIERS TYPICAL CHARACTERISTICS GATE TRIGGER VOLTAGE vs HOLDING CURRENT vs CASE TEMPERATURE CASE TEMPERATURE TC20AB 1 10 0·8 VAA = 12 V RL = 100 Ω RGK = 1 kΩ RGK = 1 kΩ Initiating IT = 10 mA IH - Holding Current - mA VGT - Gate Trigger Voltage - V VAA = 12 V tp(g) ≥ 20 µs 0·6 0·4 0·2 0 -50 -25 0 25 TC20AD 1 E T E L O S B O 50 75 100 0.1 -50 125 -25 0 25 50 75 TC - Case Temperature - °C TC - Case Temperature - °C Figure 5. Figure 6. 100 125 PEAK ON-STATE VOLTAGE vs PEAK ON-STATE CURRENT TC20AE VTM - Peak On-State Voltage - V 2.5 2.0 TC = 25 °C t p = 300 µs Duty Cycle ≤ 2 % 1.5 1.0 0.5 0.0 0·1 1 10 ITM - Peak On-State Current - A Figure 7.
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 APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.