TIC226M-S

TIC226 SERIES SILICON TRIACS 8 A RMS TO-220 PACKAGE (TOP VIEW) Glass Passivated Wafer 400 V to 800 V Off-State Voltage MT1 1 Max IGT of 50 mA (Quadrants 1 - 3) MT2 2 G 3 This series is currently available, but not recommended for new designs. Pin 2 is in electrical contact with the mounting base. absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC226D TIC226M Repetitive peak off-state voltage (see Note 1) TIC226S Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) TIC226N Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3) Peak gate current Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 μs) Average gate power dissipation at (or below) 85°C case temperature (see Note 4) Operating case temperature range Storage temperature range SYMBOL 400 600 VDRM 800 8 ITSM UNIT V 700 IT(RMS) A 70 A PGM 2.2 W TC -40 to +110 °C TL 230 °C IGM PG(AV) Tstg Lead temperature 1.6 mm from case for 10 seconds VALUE MDC2ACA ±1 A 0.9 -40 to +125 W °C NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at the rate of 320 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for a maximum averaging time of 20 ms. electrical characteristics at 25°C case temperature (unless otherwise noted ) PARAMETER IDRM IGT VGT VT Repetitive peak off-state current Gate trigger current Gate trigger voltage On-state voltage TEST CONDITIONS VD = rated VDRM IG = 0 Vsupply = +12 V† RL = 10 Ω Vsupply = -12 V† RL = 10 Ω Vsupply = +12 V† Vsupply = -12 V† RL = 10 Ω tp(g) > 20 μs Vsupply = -12 V† RL = 10 Ω Vsupply = -12 V† IT = ±12 A tp(g) > 20 μs tp(g) > 20 μs RL = 10 Ω tp(g) > 20 μs tp(g) > 20 μs RL = 10 Ω tp(g) > 20 μs RL = 10 Ω tp(g) > 20 μs IG = 50 mA TYP TC = 110°C RL = 10 Ω Vsupply = +12 V† Vsupply = +12 V† MIN tp(g) > 20 μs (see Note 5) 6 -12 -10 25 0.7 -0.8 -0.8 0.9 ±1.5 MAX UNIT ±2 mA 50 -50 -50 mA 2 -2 -2 2 ±2.1 V V † All voltages are with respect to Main Terminal 1. APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIC226 SERIES SILICON TRIACS electrical characteristics at 25°C case temperature (unless otherwise noted) (continued) PARAMETER TEST CONDITIONS IH Holding current IL Latching current Init’ ITM = 100 mA 10 30 Vsupply = -12 V† IG = 0 Init’ ITM = -100 mA -6 -30 Vsupply = +12 V† off-state voltage dv/dt(c) MAX IG = 0 Critical rise of commutation voltage MIN VDRM = Rated VDRM IG = 0 VDRM = Rated VDRM ITRM = ±12 A UNIT mA 50 (see Note 6) Vsupply = -12 V† Critical rate of rise of dv/dt TYP Vsupply = +12 V† mA -50 TC = 110°C ±100 TC = 85°C V/µs ±5 V/µs (see figure 7) † All voltages are with respect to Main Terminal 1. NOTES: 5. This parameter must be measured using pulse techniques, t p = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: R G = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz. thermal characteristics PARAMETER RθJC Junction to case thermal resistance RθJA Junction to free air thermal resistance MIN TYP MAX UNIT 1.8 °C/W 62.5 °C/W TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs CASE TEMPERATURE CASE TEMPERATURE TC01AA Vsupply IGTM VAA = ± 12 V + + - RL = 10 Ω tp(g) = 20 µs + + 100 10 1 -60 -40 -20 0 20 40 60 80 100 120 TC01AB 10 VAA = ± 12 V Vsupply IGTM VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA 1000 GATE TRIGGER VOLTAGE vs + + - + - - + RL = 10 Ω tp(g) = 20 µs } 1 0·1 -60 -40 -20 0 20 60 80 TC - Case Temperature - °C TC - Case Temperature - °C Figure 1. Figure 2.
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 APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIC226 SERIES SILICON TRIACS TYPICAL CHARACTERISTICS HOLDING CURRENT vs LATCHING CURRENT vs CASE TEMPERATURE 1000 VAA = ± 12 V Vsupply + - Vsupply IGTM IG = 0 Initiating ITM = 100 mA IL - Latching Current - mA IH - Holding Current - mA CASE TEMPERATURE TC01AD 1000 100 10 + + - + + -20 0 TC01AE VAA = ± 12 V 100 10 1 0·1 -60 -40 -20 0 20 40 60 80 100 1 -60 120 -40 TC - Case Temperature - °C 20 40 60 80 100 120 TC - Case Temperature - °C Figure 3. Figure 4. THERMAL INFORMATION MAX AVERAGE POWER DISSIPATED vs MAX RMS ON-STATE CURRENT vs CASE TEMPERATURE RMS ON-STATE CURRENT TI01AB P(av) - Maximum Average Power Dissipated - W IT(RMS) - Maximum On-State Current - A 10 9 8 7 6 5 4 3 2 1 0 32 TI01AC TJ = 110 °C 28 Conduction Angle = 360 ° Above 8 A rms See ITSM Figure 24 20 16 12 8 4 0 0 25 50 75 100 125 0 2 4 6 8 10 12 TC - Case Temperature - °C IT(RMS) - RMS On-State Current - A Figure 5. Figure 6.
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 APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIC226 SERIES SILICON TRIACS PARAMETER MEASUREMENT INFORMATION VAC VAC L1 ITRM IMT2 IMT2 C1 50 Hz VMT2 VDRM DUT RG See Note A R1 VMT2 10% dv/dt 63% IG IG NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed so that the off-state-voltage duration is approximately 800 µs. PMC2AA Figure 7.
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 APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.