TIC236N-S

TIC236 SERIES SILICON TRIACS High Current Triacs TO-220 PACKAGE (TOP VIEW) 12 A RMS Glass Passivated Wafer MT1 1 400 V to 800 V Off-State Voltage MT2 2 G 3 Max IGT of 50 mA (Quadrants 1 - 3) Pin 2 is in electrical contact with the mounting base. This series is currently available, but not recommended for new designs. absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC236D TIC236M Repetitive peak off-state voltage (see Note 1) TIC236S Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2) TIC236N Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3) Peak gate current Operating case temperature range Storage temperature range SYMBOL 400 600 VDRM UNIT V 700 800 IT(RMS) 12 A ITSM 100 A TC -40 to +110 °C TL 230 °C IGM Tstg Lead temperature 1.6 mm from case for 10 seconds VALUE MDC2ACA ±1 -40 to +125 A °C NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 300 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. electrical characteristics at 25°C case temperature (unless otherwise noted ) PARAMETER IDRM IGT VGT VT Repetitive peak off-state current Gate trigger current Gate trigger voltage On-state voltage TEST CONDITIONS VD = Rated VDRM IG = 0 Vsupply = +12 V† RL = 10 Ω Vsupply = -12 V† RL = 10 Ω Vsupply = +12 V† Vsupply = -12 V† RL = 10 Ω tp(g) > 20 μs Vsupply = -12 V† RL = 10 Ω Vsupply = -12 V† ITM = ±17 A tp(g) > 20 μs tp(g) > 20 μs RL = 10 Ω tp(g) > 20 μs tp(g) > 20 μs RL = 10 Ω tp(g) > 20 μs RL = 10 Ω tp(g) > 20 μs IG = 50 mA TYP TC = 110°C RL = 10 Ω Vsupply = +12 V† Vsupply = +12 V† MIN tp(g) > 20 μs (see Note 4) 12 -19 -16 34 0.8 -0.8 -0.8 0.9 ±1.4 MAX UNIT ±2 mA 50 -50 -50 mA 2 -2 -2 2 ±2.1 V V † All voltages are with respect to Main Terminal 1. NOTE 4: This parameter must be measured using pulse techniques, t p = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIC236 SERIES SILICON TRIACS electrical characteristics at 25°C case temperature (unless otherwise noted) (continued) PARAMETER TEST CONDITIONS IH Holding current IL Latching current di/dt Init’ ITM = 100 mA 22 40 Vsupply = -12 V† IG = 0 Init’ ITM = -100 mA -12 -40 Vsupply = +12 V† off-state voltage dv/dt(c) MAX IG = 0 MIN VD = Rated VD UNIT mA 80 (see Note 5) Vsupply = -12 V† Critical rate of rise of dv/dt TYP Vsupply = +12 V† mA -80 IG = 0 TC = 110°C Critical rise of VD = Rated VD TC = 80°C commutation voltage di/dt = 0.5 IT(RMS)/ms IT = 1.4 IT(RMS) Critical rate of rise of VD = Rated VD on -state current diG/dt = 50 mA/µs IGT = 50 mA ±1.2 TC = 110°C ±400 V/µs ±9 V/µs ±100 A/µs † All voltages are with respect to Main Terminal 1. NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: R G = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz. thermal characteristics PARAMETER RθJC Junction to case thermal resistance RθJA Junction to free air thermal resistance MIN TYP MAX UNIT 2 °C/W 62.5 °C/W TYPICAL CHARACTERISTICS GATE TRIGGER VOLTAGE vs GATE TRIGGER CURRENT vs IGT - Gate Trigger Current - mA 100 10 1 0·1 -60 Vsupply IGTM + + + + -40 -20 CASE TEMPERATURE TC08AA 10 VGT - Gate Trigger Voltage - V CASE TEMPERATURE 1000 VAA = ± 12 V 1 Vsupply IGTM + + + + tp(g) = 20 µs 20 40 60 80 100 VAA = ± 12 V } RL = 10 Ω 0 120 0·1 -60 -40 -20 RL = 10 Ω tp(g) = 20 µs 0 20 40 60 80 TC - Case Temperature - °C TC - Case Temperature - °C Figure 1. Figure 2.
 2 TC08AB 100 120  
 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIC236 SERIES SILICON TRIACS TYPICAL CHARACTERISTICS HOLDING CURRENT vs LATCHING CURRENT vs CASE TEMPERATURE 10 1 TC08AE 1000 IL - Latching Current - mA IH - Holding Current - mA 100 CASE TEMPERATURE TC08AD 100 10 Vsupply IGTM Vsupply VAA = ± 12 V IG = 0 + 0.1 -60 -40 + + - Initiating ITM = 100 mA -20 0 20 40 60 80 100 120 1 -60 -40 + + VAA = ± 12 V -20 0 20 40 60 80 TC - Case Temperature - °C TC - Case Temperature - °C Figure 3. Figure 4.
 100 120  
 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3