TIP42-S

TIP42, TIP42A, TIP42B, TIP42C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the TIP41 Series TO-220 PACKAGE (TOP VIEW) 65 W at 25°C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available E 3 This series is obsolete and not recommended for new designs. Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL TIP42 Collector-base voltage (IE = 0) TIP42A V CBO TIP42C TIP42 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current TIP42A TIP42B TIP42C UNIT -80 E T E L O S B O TIP42B VALUE VCEO VEBO IC -100 V -120 -140 -40 -60 V -80 -100 -5 V -6 A Peak collector current (see Note 1) ICM -10 Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W ½LIC2 62.5 mJ Continuous base current Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. IB Ptot -3 2 Tj -65 to +150 TL 250 Tstg -65 to +150 A A W °C °C °C This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω, V BE(off) = 0, RS = 0.1 Ω, VCC = -20 V. DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP42, TIP42A, TIP42B, TIP42C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = -30 mA MIN IB = 0 (see Note 5) TIP42 -40 TIP42A -60 TIP42B -80 TIP42C -100 TYP MAX UNIT V VCE = -80 V VBE = 0 TIP42 -0.4 Collector-emitter VCE = -100 V VBE = 0 TIP42A -0.4 cut-off current VCE = -120 V VBE = 0 TIP42B -0.4 VCE = -140 V VBE = 0 TIP42C -0.4 Collector cut-off VCE = -30 V IB = 0 TIP42/42A -0.7 current VCE = -60 V IB = 0 TIP42B/42C -0.7 VEB = -5 V IC = 0 Forward current VCE = -4 V IC = -0.3 A transfer ratio VCE = -4 V IC = - 3A -0.6 A IC = -6 A (see Notes 5 and 6) -1.5 V -4 V IC = -6 A (see Notes 5 and 6) -2 V Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio IB = VCE = -1 (see Notes 5 and 6) mA mA mA 30 15 E T E L O S B O VCE = -10 V IC = -0.5 A f = 1 kHz 20 VCE = -10 V IC = -0.5 A f = 1 MHz 3 75 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.92 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = -6 A IB(on) = -0.6 A IB(off) = 0.6 A 0.4 µs toff Turn-off time VBE(off) = 4 V RL = 5 Ω tp = 20 µs, dc ≤ 2% 0.7 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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 DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP42, TIP42A, TIP42B, TIP42C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS634AD VCE = -4 V TC = 25°C tp = 300 µs, duty cycle < 2% 100 10 1·0 -0·01 -0·1 TCS634AE -10 VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - DC Current Gain 1000 COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT IC = -300 mA IC = -1 A IC = -3 A IC = -6 A -1·0 -0·1 E T E L O S B O -1·0 -10 -0·01 -0·001 IC - Collector Current - A -0·01 -0·1 -1·0 -10 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1·2 TCS634AF VBE - Base-Emitter Voltage - V VCE = -4 V TC = 25°C -1·1 -1·0 -0·9 -0·8 -0·7 -0·6 -0·1 -1·0 -10 IC - Collector Current - A Figure 3.
  
 DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP42, TIP42A, TIP42B, TIP42C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -100 SAS634AB tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation -10 -1·0 -0·1 TIP42 TIP42A TIP42B TIP42C E T E L O S B O -0·01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS633AB Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5.
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 DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.