TIPL791A-S

TIPL791, TIPL791A NPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar Construction 4 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100°C 1000 Volt Blocking Capability This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) TIPL791 Emitter-base voltage Continuous collector current TIPL791A V CBO E T E L O S B O Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) SYMBOL Peak collector current (see Note 1) TIPL791 TIPL791A TIPL791 TIPL791A VCES VCEO VEBO IC ICM Continuous device dissipation at (or below) 25°C case temperature Ptot Storage temperature range Tstg Operating junction temperature range NOTE Tj VALUE 850 1000 850 1000 400 450 10 4 8 75 -65 to +150 -65 to +150 UNIT V V V V A A W °C °C 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIPL791, TIPL791A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES ICEO IEBO hFE V CE(sat) VBE(sat) ft Cob Collector-emitter sustaining voltage TEST CONDITIONS IC = 100 mA L = 25 mH MIN (see Note 2) TIPL791 400 TIPL791A 450 TYP MAX V VCE = 850 V VBE = 0 TIPL791 Collector-emitter VCE = 1000 V VBE = 0 TIPL791A cut-off current VCE = 850 V VBE = 0 TC = 100°C TIPL791 200 TC = 100°C TIPL791A 200 5 5 VCE = 1000 V VBE = 0 Collector cut-off VCE = 400 V IB = 0 TIPL791 5 current VCE = 450 V IB = 0 TIPL791A 5 VEB = 10 V IC = 0 VCE = 5V Emitter cut-off current Forward current transfer ratio 1 IC = 0.5 A IB = 0.2 A IC = Collector-emitter IB = 0.5 A IC = 2.5 A saturation voltage IB = 1A Base-emitter saturation voltage Current gain bandwidth product Output capacitance (see Notes 3 and 4) 20 4A IB = 1A IC = 4A IB = 0.2 A IC = 1A 0.5 A IC = 2.5 A IB = 1A IC = 4A IB = 1A IC = 4A µA mA 0.5 (see Notes 3 and 4) 1.0 2.5 TC = 100°C V 5.0 1.0 E T E L O S B O IB = µA 60 1A IC = UNIT (see Notes 3 and 4) 1.2 1.4 TC = 100°C V 1.3 VCE = 10 V IC = 0.5 A f= 1 MHz 12 MHz VCB = 20 V IE = 0 f = 0.1 MHz 110 pF NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 1.66 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER † TEST CONDITIONS † MIN MAX UNIT Voltage storage time trv Voltage rise time tfi Current fall time tti Current tail time txo Cross over time tsv Voltage storage time 2.5 µs trv Voltage rise time 400 ns tfi Current fall time 200 ns tti Current tail time txo Cross over time IC = 4 A VBE(off) = -5 V IB(on) = 0.8A IC = 4 A IB(on) = 0.8A VBE(off) = -5 V TC = 100°C (see Figures 1 and 2) (see Figures 1 and 2) 2 µs 200 ns 100 ns 50 ns 200 ns 50 ns 600 ns Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
 2 TYP tsv  
 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIPL791, TIPL791A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 33 Ω BY205-400 RB (on) 1 pF 180 µH V Gen 1 kΩ 68 Ω 0.02 µF vcc 2N2222 BY205-400 Vclamp = 400 V TUT 1 kΩ +5V 270 Ω E T E L O S B O BY205-400 5X BY205-400 1 kΩ 2N2904 Adjust pw to obtain IC D44H11 47 Ω For IC < 6 A VCC = 50 V For IC ≥ 6 A VCC = 100 V V 100 Ω BE(off) Figure 1. Inductive-Load Switching Test Circuit I B(on) A - B = tsv B - C = trv D - E = tfi E - F = tti A (90%) IB Base Current C B - E = txo V CE B 90% 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms
  
 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIPL791, TIPL791A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCP791AA 100 TC = 125°C TC = 25°C TC = -65°C VCE = 5 V hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 10 1·0 0·1 TCP791AB 5 TC = 25°C IC = 1 A IC = 2 A IC = 3 A IC = 4 A 4 3 2 1 E T E L O S B O 0 1·0 10 0 0·5 IC - Collector Current - A 1·0 1·5 2·0 2·5 IB - Base Current - A Figure 3. Figure 4. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAP791AA 1·0 0.1 tp = 100 µs 1 ms tp = tp = 10 ms DC Operation 0·01 1·0 TIPL791 TIPL791A 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 5.
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 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIPL791, TIPL791A NPN SILICON POWER TRANSISTORS ZθJC/RθJC - Normalised Transient Thermal Impedance THERMAL INFORMATION THERMAL RESPONSE JUNCTION TO CASE vs POWER PULSE DURATION TCP791AC 1·0 50% 20% 10% 0·1 5% 0% duty cycle = t1/t2 Read time at end of t1, t1 t2 E T E L O S B O TJ(max) - TC = PD(peak) · 0·01 10-5 10-4 10-3 ( ) 10-2 ZθJC RθJC · R θJC(max) 10-1 100 t1 - Power Pulse Duration - s Figure 6.
  
 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5 TIPL791, TIPL791A NPN SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C E T E L O S B O 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 0,64 0,41 2,90 2,40 5,28 4,88 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
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 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.