TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ
TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ
VERY LOW VOLTAGE
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Agency Recognition
Low Capacitance
‘4015......................................................................................... 28 pF
‘4030......................................................................................... 27 pF
‘4040......................................................................................... 23 pF
Description
UL
Digital Line Signal Level Protection
- ISDN
- xDSL
SMA Package (Top View)
Safety Extra Low Voltage, SELV, values
VDRM
V(BO)
V
V
‘4015
±8
± 15
‘4030
± 15
± 30
‘4040
± 25
± 40
Device
File Number: E215609
R (B) 1
2 T (A)
MDXXCCE
SMB Package (Top View)
30 A “L” Series specified for:
- ITU-T recommendations K.20, K.45, K.21
- FCC Part 68 and GR-1089-CORE
Wave Shape
Standard
2/10 µs
8/20 µs
10/160 µs
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K.20/45/21
FCC Part 68
FCC Part 68
GR-1089-CORE
10/700 µs
10/560 µs
10/1000 µs
R(B) 1
2 T(A)
ITSP
MDXXBGF
A
150
120
65
Device Symbol
T
45
35
30
Available in SMA and SMB Packages
SMA Saves 25 % Placement Area Over SMB
R
SD4XAA
T erminals T and R correspond to the
alternative line designators of A and B
Description
These devices are designed to limit overvoltages on digital
.................................................. UL Recognized Components
telecommunication lines. Overvoltages are normally caused by a.c.
power system or lightning flash disturbances which are induced or
conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of transformer
windings and low voltage electronics.
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state condition. This low-voltage on state
causes the current resulting from the overvoltage to be safely diverted through the device. The device switches off when the diverted current
falls below the holding current value.
How to Order
Device
TISP40xxL1
Package
Carrier
SMA/ DO-214AC J- Bend (AJ) Embo ssed Tape Reeled
(R)
SMB / DO-214AA J- Bend (BJ)
Order As
TISP40xxL1AJR-S
TISP40xxL1BJR-S
Insert xx value cor respond ing to p rotection volt ages of 15 V, 30 V and 40 V.
WARNING Cancer and Reproductive Harm
www.P65Warnings.ca.gov
AUGUST 1999 – REVISED JULY 2019
*RoHS Directive 2015/863, Mar 31, 2015 and Annex.
Specifications are subject to change without notice.
Users should verify actual device performance in their
specific applications.
The products described herein and this document are
subject to specific legal disclaimers as set forth on the last
page of this document, and at
www.bourns.com/docs/legal/disclaimer.pdf.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
‘4015
‘4030
‘4040
Repetitive peak off-state voltage
Symbol
Value
Unit
VDRM
±8
±15
±25
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
2/10 µs (Telcordia GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, comb ination wave generator, 1.2/50 voltage, 8/20 current)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/310 µs (ITU-T K.20/45/21, 10/700 µs voltage wave shape)
5/320 µs (FCC Part 68, 9/720 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape)
±150
±120
± 65
± 45
± 45
± 35
± 30
ITSP
A
Non-repetitive peak on-state current (see Notes 1 and 2)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
0.2 s 50 Hz/60 Hz a.c.
2 s 50 Hz/60 Hz a.c.
1000 s 50 Hz/60 Hz a.c.
20
22
13
5
1.8
ITSM
A
Initial rate of rise of current (2/10 waveshape)
di/d t
130
A/µs
Maximum junction temperature
TJM
150
°C
-65 to +150
°C
Storage temperature range
NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 °C.
2. The surge may be repeated after the device returns to its initial conditions.
Tstg
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
±5
µA
IDRM
Repetitive peak offstate current
VD = VDRM
V(BO)
Breakover voltage
di/dt = ±0.8 A/ms
‘4015
‘4030
‘4040
±15
±30
±40
V
V(BO)
Impulse breakover
voltage
dv/dt = ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±5 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘4015
‘4030
‘4040
±34
±50
±63
V
I(BO)
Breakover current
di/dt = ±0.8 A/ms
±0.8
A
ID
Off- state current
±2
µA
IH
Holding current
VD = ± 6 V
VD = ± 13 V
VD = ± 22 V
IT = ±5 A, di/dt = +/-30 mA/ms
AUGUST 1999 – REVISED JULY 2019
‘4015
‘4030
‘4040
±50
mA
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
f = 1 MHz, Vd = 1 V rms, VD = 0
Coff
Off-state capacitance
f = 1 MHz, Vd = 1 V rms, VD = 1 V
f = 1 MHz, Vd = 1 V rms, VD = 2 V
Min
‘4015
‘4030
‘4040
‘4015
‘4030
‘4040
‘4015
‘4030
‘4040
Typ
Max
Unit
28
27
23
25
24
20
23
22
18
36
35
29
33
31
26
30
29
24
pF
Typ
Max
Unit
Thermal Characteristics
Parameter
RθJA
Junctio n to free air thermal resistance
Min
Test Conditions
EIA/JESD51-3 PCB, IT = ITSM(1000) ,
TA = 25 °C, (see Note 3)
125
120
SMA
SMB
265 mm x 210 mm populated line card, SMA
4-layer PCB, IT = ITSM(1000), TA = 25 °C SMB
60
55
°C/W
NOTE 3: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
AUGUST 1999 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Parameter Measurement Information
+i
ITSP
Quadrant I
Switching
Characteristic
ITSM
V(BO)
I(BO)
IH
V DRM
-v
VD
IDRM
ID
ID
IDRM
VD
V DRM
+v
IH
I(BO)
V(BO)
ITSM
I
Quadrant III
ITSP
Switching
Characteristic
-i
PM4AC
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
AUGUST 1999 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
1.10
TC4LVC
1000
'4040L1
Normalized Breakover Voltage
ID – Off-State Current - nA
10000
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE TC4LVE
1.05
100
10
'4015L1
1.00
'4030L1
'4040L1
1
'4030L1
'4015L1
0.1
0
50
100
TA – Ambient Temperature – °C
150
0.95
-25
Figure 2.
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
70
50
TC4LVB
2.0
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE TC4LVD
1.5
Normalized Holding Current
IT – On-State Current – A
150
Figure 3.
30
20
10
7
5
3
2
1
0.7
0.5
0.3
0.2
0.1
0
25
50
75
100
125
TJ - Junction Temperature - °C
1.0
0.9
0.8
0.7
0.6
0.5
1
2
3
4
VT – On-State Voltage – V
Figure 4.
AUGUST 1999 – REVISED JULY 2019
5
6
0.4
-25
0
25
50
75
100
TJ - Junction Temperature - °C
125
150
Figure 5.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Typical Characteristics
30
CAPACITANCE
vs
OFF-STATE VOLTAGE
TC4L1AA
Coff – Capacitance – pF
TJ = 25 °C
Vd = 1 V
'4015
20
'4030
15
'4040
10
0.01 0.02 0.05 0.1 0.2
0.5
1
2 3 5
10 20 30
VD - Off-state Voltage - V
Figure 6.
AUGUST 1999 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Rating and Thermal Information
ITSM(t) - Non-Repetitive Peak On-State Current - A
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
TI4MAI
30
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
20
15
10
9
8
7
6
5
4
3
2
1.5
0.01
0.1
1
10
100
1000
t - Current Duration - s
Figure 7.
1.00
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
TI4LVA
'4015L1
Derating Factor
0.99
0.98
'4030L1
'4040L1
0.97
0.96
0.95
-40 -35 -30 -25 -20 -15 -10 -5
0
5
10 15 20 25
TAMIN - Minimum Ambient Temperature - °C
AUGUST 1999 – REVISED JULY 2019
Figure 8.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
APPLICATIONS INFORMATION
Transformer Protection
The inductance of a transformer winding reduces considerably when the magnetic core material saturates. Saturation occurs when the
magnetizing current through the winding inductance exceeds a certain value. It should be noted that this is a different current to the
transformed current component from primary to secondary. The standard inductance-current
relationship is:
di
(( ((
E = – L ---di----E = – L dt
dt
where:
L = unsaturated inductance value in H
di = current change in A
dt = time period in s for current change di
E = winding voltage in V
Rearranging this equation and working large Δ changes to saturation gives the useful circuit relationship of:
E x ∆t = L x ∆i
E x ∆t = L x ∆i
A transformer winding volt-second value for saturation gives the designer an idea of circuit operation under overvoltage conditions. The
volt-second value is not normally quoted, but most manufacturers should provide it on request. A 50 Vµs winding will support rectangular
voltage pulses of 50 V for 1 µs, 25 V for 2 µs, 1 V for 50 µs and so on. Once the transformer saturates, primary to secondary coupling will be
lost and the winding resistance, RW, shunts the overvoltage protector, Th1 - see Figure 9. This saturated condition is a concern for long
duration impulses and a.c. fault conditions because the current capability of the winding wire may be exceeded. For example, if the on-state
voltage of the protector is 1 V and the winding resistance is 0.2 Ω, the winding would bypass a current of 1/0.2 = 5 A, even though the
protector was in the low voltage condition.
T1
UNSATURATED
Th1
T1
L
SATURATED
Th1 RW
AI4XAO
Figure 9. Transformer Saturation
Figure 10 shows a generic protection arrangement. Resistors R1 and R2, together with the overcurrent protection, prevent excessive winding
current flow under a.c. conditions. Normally these resistors would only be needed for special cases, e.g. some T1/E1 designs. Alternatively, a
split winding could be used with a single resistor connecting the windings. This resistor could be by-passed by a small capacitor to reduce
signal attenuation.
OVERAI4XAN
CURRENT
PROTECT ION
R1
T1
LINE
Th1
R2
SIGNAL
Figure 10. Transformer Winding Protection
Overcurrent protection upstream from the overvoltage protector can be fuse, PTC or thick film resistor based. For very high frequency circuits,
fuse inductance due to spiral wound elements may need to be evaluated.
TISP® Device Voltage Selection
Normally, the working voltage value of the protector, VDRM, would be chosen to be just greater than the peak signal amplitude over the
equipment temperature range. This would give the lowest possible protection voltage, V(BO). This would minimize the peak voltage applied to
the transformer winding and increase the time to core saturation.
In high frequency circuits, there are two further considerations. Low voltage protectors have a higher capacitance than high voltage protectors.
AUGUST 1999 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
TISP® Device Voltage Selection (Continued)
So a higher voltage protector might be chosen specifically to reduce the protector capacitive effects on the signal.
Low energy short duration spikes will be clipped by the protector. This will extend the spike duration and the data loss time. A higher protector
voltage will reduce the data loss time. Generally, this will not be a significant factor for inter-conductor protection.
However, clipping is significant for protection to ground, where there is continuous low-level a.c. common mode induction. In some cases the
induced a.c. voltage can be over 10 V. Repetitive clipping at the induced a.c. peaks by the protector would cause severe data corruption. The
expected a.c. voltage induced should be added to the maximum signal level for setting the protector VDRM value.
2-Wire Digital Systems
Typical systems using a single twisted pair connection are: Integrated Services Digital Network (ISDN) and Pair Gain.
Signal level protection at the transformer winding is given by protectors Th3 and Th5. Typically these could be TISP4015L1 type devices with
a 15 V voltage protection level.
LINE
SIGNAL
T1
T2
Th1
C1
Th3
Th2
DC FEED
OVERCURRENT
PROTECTION
OVERCURRENT
PROTECTION
Th4
TRANSFORMER COUPLED TWO-WIRE INTERFACE
SIGNAL
C2
Th5
DC SUPPLY
AI4XAL
Figure 11. 2-Wire System
Two line protection circuits are given; one referenced to ground using Th1 and Th2 (left) and the other inter-wire using protector Th4
(right) - see Figure 11. For ISDN circuits compliant to ETSI ETR 080:1993, ranges 1 and 2 can be protected by the following device types:
TISP4095M3, TISP4095H3, TISP3095H3 (combines Th1 and Th2) and TISP7095H3 (combines Th1, Th2 and Th4). Ranges 4 through 5 can be
protected by: TISP4145M3, TISP4145H3, TISP3145H3 (combines Th1 and Th2) and TISP7145H3 (combines Th1, Th2 and Th4). Device surge
requirement, H or M, will be set by the overcurrent protection components and the standards complied with. Protection of just the d.c. feed to
ETSI ranges is covered in the TISP5xxxH3 data sheet.
When loop test voltages exceed the normal d.c. feed levels, higher voltage protectors need to be selected. For two terminal protectors, for
levels up to 190 V (135 V rms) the TISP4250, H3 or M3, can be used and for 210 V (150 V rms) the TISP4290, H3 or M3, can be used.
In Pair Gain systems, the protector VDRM is normally set by the d.c. feed value. The following series of devices have a 160 V working voltage
at 25 °C: TISP4220M3, TISP4220H3, TISP3210H3 (combines Th1 and Th2) and TISP7210H3 (combines Th1, Th2 and Th4). These devices
can be used on 150 V d.c. feed voltages down to an ambient temperature of -25 °C. Where the subscriber equipment may be exposed to
POTS (Plain Old Telephone Service) voltage levels, protector Th4 needs a higher working voltage of about 275 V. Suitable device types are:
TISP4350M3, TISP4350H3, TISP3350H3 (combines Th1 and Th2) and TISP7350H3 (combines Th1, Th2 and Th4).
The overcurrent protection for the overvoltage protector can be fuse, PTC or thick film resistor based. Its a.c. limiting capability should be less
than the ratings of the intended overvoltage protector. Equipment complying with the year 2000 international K.20, K.21 and K.45
recommendations from the ITU-T, may be required to demonstrate protection coordination with the intended primary protector. Without
adding series resistance, a simple series fuse overcurrent protection is likely to fail the equipment for this part of the recommendation.
If the d.c. feed consists of equal magnitude positive and negative voltage supplies, appropriately connected TISP5xxxH3 unidirectional
protectors could replace Th1 and Th2.
4-Wire Digital Systems
A typical system using a two twisted pair connection is the High-bit-rate Digital Subscriber Line (HDSL) and the “S” interface of ISDN.
Figure 12 shows a generic two line system. HDSL tends to have ground referenced protection at both ends of the lines (Th1, Th2, Th3 and
Th4). The ISDN “S” interface is often inside the premises and simple inter-wire protection is used at the terminating adaptor (Th7 and Th8). In
all cases, signal protection, Th5, Th6, Th9 and Th10, can be TISP4015L1 type devices with a 15 V voltage protection level.
AUGUST 1999 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
4-Wire Digital Systems (Continued)
SIGNAL
LINE 1
T1
Th1
Th5
Th2
OVERCURRENT
PROTECTION
T3
OVERCURRENT
PROTECTION
Th 9
Th7
DC SUPPLY
DC FEED
SIGNAL
SIGNAL
LINE 2
T2
Th 3
Th 6
Th4
OVERCURRENT
PROTECTION
T4
OVERCURRENT
PROTECTION
SIGNAL
Th10
Th8
AI4XAM
TRANSFORMER COUPLED FOUR-WIRE INTERFACE
Figure 12. 4-Wire System
For an HDSL d.c. feed voltage of 180 V or less and operation down to an ambient of -25 °C, the following Th1, Th2, Th3 and Th4 protectors
are suitable: TISP4250M3 or TISP4250H3, TISP3250H3 (combines Th1 and Th2 or Th3 and Th4) and TISP7250H3 (combines Th1, Th2 and
Th7 or Th3, Th4 and Th8). Possible overcurrent protection components are covered in the 2-wire digital systems clause.
For ISDN interfaces powered with ±40 V (ETSI, ETS 300 012 1992) the following Th1, Th2, Th3 and Th4 protectors are suitable: TISP4070M3
or TISP4070H3 or TISP4070L3, TISP3070F3 or TISP3070H3 (combines Th1 and Th2 or Th3 and Th4) and TISP7070F3 or TISP7070H3
(combines Th1, Th2 and Th7 or Th3, Th4 and Th8). At the terminating adaptor, the Th7 and Th8 protectors do not “see” the d.c. feed voltage
and should be selected to not clip the maximum signal level. Generally, the TISP40xxL1 series will be suitable.
Internal ISDN lines are not exposed to high stress levels and the chances of a.c. power intrusion are low (ETSI EN 300 386-2 1997).
Accordingly, the equipment port protection needs are at a lower level than ports connected to outside lines.
Home Phone Networking
Using the existing house telephone wiring, home phone networking systems place the local network traffic in a high band above the POTS
and ADSL (Asymmetrical Digital Subscriber Line) spectrum. Local network rates are 1 Mbps or more. To reject noise and harmonics, an in-line
protection and 5 MHz to 10 MHz bandpass filter module is used for the equipment. These modules are available from magnetic component
manufacturers (e.g. Bel Fuse Inc.) A typical circuit for the telephone line magnetics module is shown in Figure 13. Transformer T1 isolates the
equipment from the house wiring. The isolated winding output is voltage limited by a very low-voltage protector, Th1. With a differential
voltage of about 12 V peak to peak, the TISP4015L1 could be used for Th1. After filtering, connection is made to the differential transceiver of
the processing IC.
HRTRX+
Th1
HRTRXAI4XAP
TIP
T1
FILTER
PROTECTION
C1
RING
Figure 13. Home Phone Networking Isolation/filter/protection Circuit
AUGUST 1999 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
MECHANICAL DATA
Recommended Printed Wiring Land Pattern Dimensions
SMA Land Pattern
2.34
(. 092)
1.90
(.075)
DIMENSIONS ARE:
2.16
(.085)
MILLIMETERS
(INCHES)
MDXX BIC
SMB Land Pattern
2.54
(.100)
2.40
(.095)
DIMENSIONS ARE:
2.16
(.085)
MILLIMETERS
(INCHES)
MDXX BIB
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Device
TISP4015L1AJ
TISP4030L1AJ
TISP4040L1AJ
Symbolization
Code
4015L
4030L
4040L
Device
TISP4015L1BJ
TISP4030L1BJ
TISP4040L1BJ
Symbolization
Code
4015L1
4030L1
4040L1
Carrier Information
For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.
Package
SMA
SMB
Carrier
Embossed Tape Reel Pack
Standard Quantity
5000
3000
AUGUST 1999 – REVISED JULY 2019
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is registered in the U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
Legal Disclaimer Notice
This legal disclaimer applies to purchasers and users of Bourns® products manufactured by or on behalf of Bourns, Inc. and
P[ZHɉSPH[LZJVSSLJ[P]LS`¸)V\YUZ¹
Unless otherwise expressly indicated in writing, Bourns® products and data sheets relating thereto are subject to change
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