TISP4070H3BJ THRU TISP4115H3BJ,
TISP4125H3BJ THRU TISP4220H3BJ,
TISP4240H3BJ THRU TISP4400H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxH3BJ Overvoltage Protector Series
TISP4xxxH3BJ Overview
Additional Information
®
This TISP device series protects central office, access and customer premise
equipment against overvoltages on the telecom line. The TISP4xxxH3BJ is available
in a wide range of voltages and has a high current capability, allowing minimal series
resistance to be used. These protectors have been specified mindful of the following
standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950,
IEC 60950, ITU-T K.20, K.21 and K.45. The TISP4350H3BJ meets the FCC Part 68 “B”
ringer voltage requirement and survives the Type A and B impulse tests. These devices
are housed in a surface mount SMB (DO-214AA) package.
Click these links for more information:
PRODUCT TECHNICAL INVENTORY SAMPLES
SELECTOR LIBRARY
CONTACT
Agency Recognition
Description
UL
File Number: E215609
Summary Electrical Characteristics
Part #
TISP4070H3
TISP4080H3
TISP4095H3
TISP4115H3
TISP4125H3
TISP4145H3
TISP4165H3
TISP4180H3
TISP4200H3
TISP4220H3
TISP4240H3
TISP4250H3
TISP4265H3
TISP4290H3
TISP4300H3
TISP4350H3
TISP4395H3
TISP4400H3
VDRM
V
58
65
75
90
100
120
135
145
155
160
180
190
200
220
230
275
320
300
V(BO)
V
70
80
95
115
125
145
165
180
200
220
240
250
265
290
300
350
395
400
VT @ IT
V
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
IDRM
μA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
I(BO)
mA
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
IT
A
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
IH
mA
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Co @ -2 V
pF
120
120
120
120
65
65
65
65
65
65
55
55
55
55
55
55
55
55
Functionally
Replaces
P0640SC†
P0720SC†
P0900SC†
P1100SC†
ITSM
A
1 cycle 60 Hz
60
di/dt
A/μs
2/10 Wavefront
400
P1300SC†
P1500SC
P1800SC
P2300SC†
P2600SC†
P3100SC
P3500SC
† Bourns part has an improved protection voltage
Summary Current Ratings
ITSP
A
Parameter
Waveshape
Value
2/10
500
1.2/50, 8/20
300
10/160
250
5/320
200
10/560
160
10/1000
100
NOVEMBER 1997 – REVISED MARCH 2021
WARNING Cancer and Reproductive Harm
www.P65Warnings.ca.gov
*RoHS Directive 2015/863, Mar 31, 2015 and Annex.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last
page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH3BJ Overvoltage Protector Series
ITU-T K.20/21 Rating . . . . . . . . . . . . . 8 kV 10/700, 200 A 5/310
SMBJ Package (Top View)
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Device
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
VDRM
V(BO)
V
58
65
75
90
100
120
135
145
155
160
180
190
200
220
230
275
320
300
V
70
80
95
115
125
145
165
180
200
220
240
250
265
290
300
350
395
400
R(B) 1
2
T(A)
MDXXBG
Device Symbol
T
SD4XAA
R
Terminals T and R correspond to the
alternative line designators of A and B
Rated for International Surge Wave Shapes
Low Differential Capacitance ........................................ 67 pF max.
......................................................UL Recognized Component
Waveshape
Standard
2/10 μs
8/20 μs
10/160 μs
10/700 μs
10/560 μs
10/1000 μs
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K.20/21
FCC Part 68
GR-1089-CORE
ITSP
A
500
300
250
200
160
100
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.
This TISP4xxxH3BJ range consists of eighteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are
in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding
current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is available.
How to Order
Device
TISP4xxxH3BJ
Package
BJ (J-Bend DO-214AA/SMB)
Order As
Carrier
Embossed Tape Reeled
Bulk Pack
TISP4xxxH3BJR-S
TISP4xxxH3BJ-S
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc.
NOVEMBER 1997 – REVISED MARCH 2021
Specifications are subject to change without notice. Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage, (see Note 1)
Symbol
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape)
8/20 μs (IEC 61000-4-5, 1.2/50 μs voltage, 8/20 current combination wave generator)
10/160 μs (FCC Part 68, 10/160 μs voltage wave shape)
5/200 μs (VDE 0433, 10/700 μs voltage wave shape)
0.2/310 μs (I3124, 0.5/700 μs voltage wave shape)
5/310 μs (ITU-T K.20/21, 10/700 μs voltage wave shape)
5/310 μs (FTZ R12, 10/700 μs voltage wave shape)
10/560 μs (FCC Part 68, 10/560 μs voltage wave shape)
10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
NOTES: 1.
2.
3.
4.
5.
VDRM
ITSP
Value
± 58
± 65
± 75
± 90
± 100
± 120
± 135
± 145
± 155
± 160
± 180
± 190
± 200
± 220
± 230
± 275
± 320
± 300
500
300
250
220
200
200
200
160
100
Unit
V
A
ITSM
55
60
2.1
A
diT/dt
TJ
Tstg
400
-40 to +150
-65 to +150
A/μs
°C
°C
See Applications Information and Figure 10 for voltage values at lower temperatures.
Initially, the TISP4xxxH3BJ must be in thermal equilibrium with TJ = 25 °C
The surge may be repeated after the TISP4xxxH3BJ returns to its initial conditions.
See Applications Information and Figure 11 for current ratings at other temperatures.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/ °C for ambient
temperatures above 25 °C.
NOVEMBER 1997 – REVISED MARCH 2021
Specifications are subject to change without notice. Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH3BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
IDRM
Parameter
Repetitive peak offstate current
VD = VDRM
V(BO)
Breakover voltage
dv/dt = 750 V/ms,
V(BO)
Impulse breakover
voltage
dv/dt ≤ ±1000V/μs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/μs, Linear current ramp,
Maximum ramp value = ±10 A
I(BO)
VT
IH
dv/dt
ID
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Test Conditions
RSOURCE = 300 Ω
Min.
TA = 25 °C
TA = 85 °C
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
dv/dt = ±750 V/ms, RSOURCE = 300 Ω
IT = ±5 A, tW = 100 μs
IT = ±5A , di/dt = - /+30 mA/ms
±0.15
±0 .15
Linear voltage ramp, Maximum ramp value < 0.85VDRM
VD = ±50 V
Typ.
Max.
±5
±10
±70
±80
±95
±115
±125
±145
±165
±180
±200
±220
±240
±250
±265
±290
±300
±350
±395
±400
±78
±88
±103
±124
±134
±154
±174
±189
±210
±230
±250
±261
±276
±301
±311
±362
±408
±413
±0.6
±3
±0.6
±5
TA = 85 °C
Unit
μA
V
V
A
V
A
kV/μs
±10
μA
NOVEMBER 1997 – REVISED MARCH 2021
Specifications are subject to change without notice. Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH3BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (Continued)
Parameter
Test Conditions
f = 100 kHz, Vd = 1 V rms, VD = 0,
f = 100 kHz, Vd = 1 V rms, VD = -1V
Coff
Off-state capacitance
f = 100 kHz, Vd = 1 V rms, VD = -2 V
f = 100 kHz, Vd = 1 V rms, VD = -50 V
f = 100 kHz, Vd = 1 V rms, VD = -100 V
(see Note 6)
Min.
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4125 thru ‘4220
‘4240 thru ‘4400
Typ.
145
80
70
130
71
60
120
65
55
62
30
24
28
22
Max.
170
90
84
150
79
67
140
74
62
73
35
28
33
26
Unit
Typ.
Max.
Unit
pF
NOTE 6: To avoid possible voltage clipping, the ‘4125 is tested with VD = -98 V.
Thermal Characteristics
Parameter
R θJA
NOTE
Junction to free air thermal resistance
Test Conditions
Min.
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 7)
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °C
113
°C/W
50
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
NOVEMBER 1997 – REVISED MARCH 2021
Specifications are subject to change without notice. Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH3BJ Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
ITSP
Switching
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
VDRM
-v
IDRM
ID
VD
ID
IDRM
VD
VDRM
+v
IH
I(BO)
VT
V(BO)
IT
ITSM
Quadrant III
ITSP
Switching
Characteristic
-i
PMXXAAB
Figure 1. Voltage-current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
NOVEMBER 1997 – REVISED MARCH 2021
Specifications are subject to change without notice. Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH3BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
TCHAG
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TC4HAF
1.10
VD = ±50 V
Normalized Breakover Voltage
|ID| - Off-State Current - μA
10
1
0·1
0·01
1.05
1.00
0.95
0·001
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
-25
150
Figure 2.
200
150
100
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
TA = 25 °C
tW = 100 μs
Normalized Holding Current
IT - On-State Current - A
2
1.5
1
0.7
'4125
THRU
'4220
'4240
THRU
'4400
1
TC4HAD
1.5
20
15
5
4
3
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
2.0
TC4HACB
50
40
30
7
150
Figure 3.
70
10
0
25
50
75
100 125
TJ - Junction Temperature - °C
'4070
THRU
'4115
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.5
2
3
4 5
VT - On-State Voltage - V
Figure 4.
7
10
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
150
Figure 5.
NOVEMBER 1997 – REVISED MARCH 2021
Specifications are subject to change without notice. Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH3BJ Overvoltage Protector Series
Typical Characteristics
TC4HABB
Capacitance Normalized to VD = 0
0.7
0.6
0.5
'4070 THRU '4115
0.4
0.3
'4125 THRU '4220
'4240 THRU '4400
0.2
0.5
'4145
'4165
'4180
'4200
'4220
'4240
'4250
'4265
'4290
'4300
'4350
'4395
'4400
'4115
70
'4125
TJ = 25 °C
Vd = 1 Vrms
0.8
'4095
0.9
TCHAEB
75
'4070
'4080
1
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
C - Differential Off-State Capacitance - pF
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
65
60
55
C = Coff(-2 V) - Coff(-50 V)
50
45
40
35
30
1
2
3
5
10
20 30
VD - Off-state Voltage - V
Figure 6.
50
100150
50
60 70 80 90100
150
200 250 300
VDRM - Repetitive Peak Off-State Voltage - V
Figure 7.
NOVEMBER 1997 – REVISED MARCH 2021
Specifications are subject to change without notice. Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH3BJ Overvoltage Protector Series
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
TI4HAC
30
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
20
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
15
10
9
8
7
6
5
4
3
2
1.5
0·1
1
10
100
THERMAL IMPEDANCE
vs
POWER DURATION
150
Z θJA(t) - Transient Thermal Impedance - C/W
ITSM(t) - Non-Repetitive Peak On-State Current - A
Rating and Thermal Infomation
100
70
50
40
30
20
15
10
7
5
4
3
ITSM(t) APPLIED FOR TIME t
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
2
1.5
1
0·1
1000
t - Current Duration - s
1
10
1000
Figure 9.
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE TI4HADB
700
600
0.99
500
0.98
400
Impulse Current - A
Derating Factor
100
t - Power Duration - s
Figure 8.
1.00
TI4HAE
0.97
'4070 THRU '4115
0.96
0.95
IMPULSE RATING
vs
AMBIENT TEMPERATURE
TC4HAA
BELLCORE 2/10
IEC 1.2/50, 8/20
300
FCC 10/160
250
ITU-T 10/700
200
FCC 10/560
150
'4125 THRU '4220
120
0.94
BELLCORE 10/1000
'4240 THRU '4440
0.93
-40 -35 -30 -25 -20 -15 -10 -5
0
5
10 15 20 25
TAMIN - Minimum Ambient Temperature - °C
Figure 10.
100
90
-40 -30 -20 -10 0
10 20 30 40 50 60 70 80
TA - Ambient Temperature - °C
Figure 11.
NOVEMBER 1997 – REVISED MARCH 2021
Specifications are subject to change without notice. Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH3BJ Overvoltage Protector Series
APPLICATIONS INFORMATION
Deployment
These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors (Figure 12) or
in multiples to limit the voltage at several points in a circuit (Figure 13).
Th3
Th1
Th1
Th2
Figure 12. Two Point Protectio n
Figure 13. Multi-point Protection
In Figure 12, protector Th1 limits the maximum voltage between the two conductors to ±V(BO). This configuration is normally used to protect
circuits without a ground reference, such as modems. In Figure 13, protectors Th2 and Th3 limit the maximum voltage between each conductor
and ground to the ±V(BO) of the individual protector. Protector Th1 limits the maximum voltage between the two conductors to its ±V(BO) value.
If the equipment being protected has all its vulnerable components connected between the conductors and ground, then protector Th1 is not
required.
Impulse Testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms.
The table below shows some common values.
Standard
Peak Voltage
Setting
V
Voltage
Waveform
μs
2/10
10/1000
10/160
10/560
9/720 †
9/720 †
0.5/700
Peak Current
Value
A
Current
Waveform
μs
TISP4xxxH3
25 °C Rating
A
Series
Resistance
Ω
2500
500
2/10
500
0
1000
100
10/1000
100
1500
200
10/160
250
0
800
100
10/560
160
0
FCC Part 68
(March 1998)
1500
37.5
5/320 †
200
0
1000
25
5/320 †
200
0
I3124
1500
37.5
0.2/310
200
0
37.5
1500
5/310
200
0
10/700
ITU-T K.20/K.21
100
4000
† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator
GR-1089-CORE
If the impulse generator current exceeds the protector’s current rating, then a series resistance can be used to reduce the current to the
protector’s rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following
calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated
current. The impulse generator’s fictive impedance (generators peak voltage divided by peak short circuit current) is then subtracted from the
minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over a
temperature range. By using the rated waveform values from Figure 11, the appropriate series resistor value can be calculated for ambient
temperatures in the range of -40 °C to 85 °C.
NOVEMBER 1997 – REVISED MARCH 2021
Specifications are subject to change without notice. Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH3BJ Overvoltage Protector Series
APPLICATIONS INFORMATION
AC Power Testing
The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be
terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent
protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere.
In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus
time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases, there may be a further time limit
imposed by the test standard (e.g. UL 1459 wiring simulator failure).
Capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V and -50 V. Where possible,
values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given
in Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly
dependent on connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias voltages will be about
-2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V.
Normal System Voltage Levels
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the line
connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the ring
trip circuit.
Figure 10 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated value should not be less than the
maximum normal system voltages. The TISP4265H3BJ, with a VDRM of 200 V, can be used for the protection of ring generators producing 100 V
r.m.s. of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However, this is
the open circuit voltage and the connection of the line, and its equipment will reduce the peak voltage. In the extreme case of an unconnected
line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at the temperature when the VDRM
has reduced to 190/200 = 0.95 of its 25 °C value. Figure 10 shows that this condition will occur at an ambient temperature of -22 °C. In this
example, the TISP4265H3BJ will allow normal equipment operation provided that the minimum expected ambient temperature does not fall
below -22 °C.
JESD51 Thermal Measurement Method
To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard
(JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board)
horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for
packages smaller than 27 mm (1.06 ˝) on a side and the other for packages up to 48 mm (1.89 ˝). The SMBJ measurements used the smaller
76.2 mm x 114.3 mm (3.0 ˝ x 4.5 ˝) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resistance)
and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and so can
dissipate higher power levels than indicated by the JESD51 values.
NOVEMBER 1997 – REVISED MARCH 2021
Specifications are subject to change without notice. Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH3BJ Overvoltage Protector Series
Typical Circuits
MODEM
TIP
WIRE
RING
FUSE
R1a
RING DETECTOR
Th3
HOOK SWITCH
TISP4350
PROTECTED
EQUIPMENT
Th1
D.C. SINK
Th2
SIGNAL
TIP
AI6XBMA
E.G. LINE CARD
R1b
RING
WIRE
AI6XBK
Figure 14. Modem In ter-wire Protection
Figure 15. Protection Module
R1a
Th3
SIGNAL
Th1
Th2
R1b
AI6XBL
D.C.
Figure 16. ISDN Protection
OVERCURRENT
PROTECTION
TIP
WIRE
RING/TEST
PROTECTION
TEST
RELAY
RING
RELAY
SLIC
RELAY
S3a
R1a
Th3
SLIC
PROTECTION
Th4
S2a
S1a
SLIC
Th1
Th2
RING
WIRE
Th5
R1b
S3b
S1b
S2b
TISP6xxxx,
TISPPBLx,
1/2TISP6NTP2
C1
220 nF
TEST
EQUIPMENT
RING
GENERATOR
VBAT
AI6XBJ
Figure 17. Line Card Ring/Test Protection
NOVEMBER 1997 – REVISED MARCH 2021
Specifications are subject to change without notice. Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH3BJ Overvoltage Protector Series
MECHANICAL DATA
Recommended Printed Wiring Footprint
SMB Pad Size
2.54
(0.10)
DIMENSIONS ARE:
2.40
(0.09)
METRIC
(INCHES)
2.16
(0.09)
MDXXBI
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Device
TISP4070H3BJ
TISP4080H3BJ
TISP4095H3BJ
TISP4115H3BJ
TISP4125H3BJ
TISP4145H3BJ
TISP4165H3BJ
TISP4180H3BJ
TISP4200H3BJ
TISP4220H3BJ
TISP4240H3BJ
TISP4250H3BJ
TISP4265H3BJ
TISP4290H3BJ
TISP4300H3BJ
TISP4350H3BJ
TISP4395H3BJ
TISP4400H3BJ
Symbolization
Code
4070H3
4080H3
4095H3
4115H3
4125H3
4145H3
4165H3
4180H3
4200H3
4220H3
4240H3
4250H3
4265H3
4290H3
4300H3
4350H3
4395H3
4400H3
Carrier Information
Devices are shipped in one of the carriers below. Unless a specific method of shipment is specified by the customer, devices will be shipped in
the most practical carrier. For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk
pack or embossed tape.
Carrier
Order As
Embossed Tape Reeled
TISP4xxxH3BJR-S
Bulk Pack
TISP4xxxH3BJ-S
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in the U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
NOVEMBER 1997 – REVISED MARCH 2021
Specifications are subject to change without notice. Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
Legal Disclaimer Notice
This legal disclaimer applies to purchasers and users of Bourns® products manufactured by or on behalf of Bourns, Inc. and
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Unless otherwise expressly indicated in writing, Bourns® products and data sheets relating thereto are subject to change
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