TISP4350T3BJR-S

TISP4290T3BJ, TISP4350T3BJ, TISP4400T3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxT3BJ Overvoltage Protector Series MODEM Protection against: -TIA/EIA-IS-968 Type A & B surge -UL 60950, Clause 6. power cross -CSA 22.2 No. 60950, Clause 6. power cross SMB Package (Top View) Additional Information Click these links for more information: R 1 2 T Low Differential Capacitance ... 23 pF typ. Ion-Implanted Breakdown Region -Precise and Stable Voltage -Low Voltage Overshoot Under Surge VDRM V(BO) V V '4290T3 220 290 '4350T3 '4400T3 275 335 350 400 Device PRODUCT TECHNICAL INVENTORY SAMPLES SELECTOR LIBRARY CONTACT MDXXCM Agency Recognition Device Symbol Description T UL File Number: E215609 ............UL Recognized Component SD4XAA R Rated for International Surge Wave Shapes IPPSM Wave Shape Standard 2/10 GR-1089-CORE 250 A 8/20 IEC 61000-4-5 250 10/160 TIA/EIA-IS-968 150 10/700 ITU-T K.20/.21/.45 120 9/720 TIA/EIA-IS-968 120 10/560 TIA/EIA-IS-968 100 10/1000 GR-1089-CORE 80 How to Order Device TISP4xxxT3BJ Package Carrier Order As BJ (SMB/DO-214AA J-Bend) R (Embossed Tape Reeled TISP4xxxT3BJR-S Description These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as the diverted current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in both polarities. After a TIA/EIA-IS-968 (replaces FCC Part 68) Type A surge the equipment can be faulty, provided that the fault mode causes the equipment to be unusable. There are two wave shapes used: 10/160 for longitudinal surges and 10/560 for metallic surges. For modems with a TISP4350T3BJ connected between the Ring and Tip wires (and without overvoltage protection to ground), the longitudinal 10/160 applied to both Ring and Tip will not activate the TISP4350T3BJ, giving an operational pass. The metallic 10/560 is applied between Ring and Tip wires and will operate the TISP4350T3BJ. As the TISP4350T3BJ has a current rating of 100 A, 10/560 it will survive the FCC Part Type A 100 A, 10/560 metallic surge giving an operational pass. WARNING Cancer and Reproductive Harm www.P65Warnings.ca.gov DECEMBER 2001 – REVISED JULY 2019 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxT3BJ Overvoltage Protector Series Description (Continued) After a TIA/EIA-IS-968 Type B surge the equipment must be operational. As the TISP4350T3BJ has a current rating of 120 A, it will survive both Type B surges, metallic (25 A, 9/720) and longitudinal (37.5 A, 9/720), giving an operational pass to FCC Part 68 Type B surges. The TIA/EIA-IS-968 B type ringer has voltages of 56.5 V d.c. and up to 150 V rms a.c., giving a peak voltage of 269 V. The TISP4350T3BJ will not clip the B type ringing voltage as it has a high impedance up to 275 V. Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Repetitive peak off-state voltage (see Note 1) Symbol '4290T3 '4350T3 '4400T3 VDRM Value Unit ±220 ±275 ±335 V Non-repetitive peak on-state pulse current (see Notes 1 and 2) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) ±250 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 volt age wave shape) ±250 10/160 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/160 voltage wave shape) ±150 5/310 (ITU-T K.44, 10/700 voltage wave shape used in K.20/45/21) IPPSM ±120 5/320 (TIA/EIA-IS-968 (replaces FCC Part 68), 9/720 voltage wave shape) ±120 10/560 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/560 voltage wave shape) ±100 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) ±80 A Non-repetitive peak on-state current (see Notes 1, 2 and 3) 20 ms (50 Hz), full sine wave ITSM 16.7 ms (60 Hz), full sine wave 25 30 A 2.1 1000 s 50 Hz/60 Hz Initial rate of rise of on-s tate current, Linear current ramp, Maximum ramp value < 50 A Junction temperature Storage temperature range di T /dt 500 A/μs TJ -40 to +150 °C Tstg -65 to +150 °C NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 °C. 2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its initial conditions. 3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C. Overload Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Symbol Value Unit See Figure 4 Peak overload on-state current, a.c. power line cross tests UL 60950 (see Note 4) IT(OV)M for current A rms versus time NOTE 4: These electrical stress levels may damage the device silicon chip. After test, the pass criterion is either that the device is functional or, if it is faulty, that it has a short circuit fault mode. In the short circuit fault mode, the following equipment is protected as the device is a permanent short across the line. The equipment would be unprotected if an open circuit fault mode developed. DECEMBER 2001 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxT3BJ Overvoltage Protector Series Recommended Operating Conditions Component Min Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68), 10/160 type A surge survival Max Unit 2.5 (T-G or R-G connection) RS Typ Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68), 10/560 type A surge survival 0 Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68), 9/720 type B surge survival 0 Series resistor for GR-1089-CORE first-level surge survival 5 Series resistor for K.20, K.21 and K.45 1.5 kV, 10/700 surge survival 0 Series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector 6 Ω Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter Test Conditions IDRM Repetitive peak offstate current VD = VDRM V(BO) AC breakover voltage dv/dt = 250 V/ms, RSOURCE = 300 I(BO) AC breakover current dv/dt = 250 V/ms, RSOURCE = 300 VT On-state voltage IT = 5 A, t IH Holding current IT = 5 A, di/dt = +/-30 mA/ms dv/dt ID Coff Critical rate of rise of off-state voltage W Max Unit TA = 25 C TA = 85 C Min Typ 5 10 A '4290T3 '4350T3 '4400T3 290 350 400 V 800 A 3 V = 100 s Linear voltage ramp, Maximum ramp value < 0.85 VDRM 0.15 A 5 kV/ s TA = 85 C Off-state current VD = 50 V 10 54 48 65 58 Off-state capacitance f = 1 MHz, Vd = 1 V rms, VD = 0, f = 1 MHz, Vd = 1 V rms, VD = -1 V f = 1 MHz, Vd = 1 V rms, VD = -2 V 43 52 f = 1 MHz, Vd = 1 V rms, VD = -50 V f = 1 MHz, Vd = 1 V rms, VD = -100 V 20 24 16 19 Typ Max A pF Thermal Characteristics Parameter Test Conditions Min EIA/JESD51-3 PCB, R θJA Junction to free air thermal resistance 115 TA = 25 °C, (see Note 5) 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000) , TA = 25 °C Unit °C/W 52 NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. DECEMBER 2001 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxT3BJ Overvoltage Protector Series Parameter Measurement Information +i Quadrant I IPPSM Switching Characteristic ITSM IT V(BO) VT I(BO) IH IDRM ID VD VDRM -v ID IDRM VD VDRM +v IH I(BO) VT V(BO) IT ITSM I Quadrant III IPPSM Switching Characteristic -i PM4XAG Figure 1. Voltage-Current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal DECEMBER 2001 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxT3BJ Overvoltage Protector Series Typical Characteristics NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE TC4TAA TYPICAL CAPACITANCE ASYMMETRY vs OFF-STATE VOLTAGE TC4TAB 1.0 |Coff(+VD) - C off(-VD) | — Capacitance Asymmetry – pF 1 0.9 TJ = 25 °C Vd = 1 Vrms Capacitance Normalized to VD = 0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.5 1 2 3 5 10 20 30 VD - Off-state Voltage - V Figure 2. 50 100150 0.9 0.8 0.7 Vd = 10 mV rms, 1 MHz 0.6 0.5 0.4 0.3 0.2 0.1 Vd = 1 V rms, 1 MHz 0.0 1 2 3 4 5 7 10 20 30 40 50 VD — Off-state Voltage - V Figure 3. DECEMBER 2001 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxT3BJ Overvoltage Protector Series Rating and Thermal Information IT(OV)M — Peak Overload On-State Current – A rms PEAK OVERLOAD ON-STATE CURRENT vs CURRENT DURATION TI4MAM 40 35 30 25 DEVICE WILL CARRY CURRENT OF TESTS 1 THRU 5 CLAUSE 6.4, UL 60950, FOR FULL TEST TIME 2 40 A 100 A s 20 15 7A 10 9 8 7 6 5 4 3.5 3 2.5 2 0·01 2.2 A WIRING SIMULATOR 0·1 1 10 t - Current Duration - s 100 1000 Figure 4. Peak Overload On-state Current against Duration Asia-Pacific: Tel: +886-2 2562-4117 • Email: asiacus@bourns.com EMEA: Tel: +36 88 885 877 • Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 • Email: americus@bourns.com www.bourns.com “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in the U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. DECEMBER 2001 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Legal Disclaimer Notice This legal disclaimer applies to purchasers and users of Bourns® products manufactured by or on behalf of Bourns, Inc. and P[ZHɉSPH[LZJVSSLJ[P]LS`¸)V\YUZ¹ Unless otherwise expressly indicated in writing, Bourns® products and data sheets relating thereto are subject to change ^P[OV\[UV[PJL