TISP4500H3BJR-S

TISP4500H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4500H3BJ Overvoltage Protector SMBJ Package (Top View) Non-Conductive During K.20/21/45 Power Contact Test - Off-State Voltage ..................>245 V rms - For Controlled Environment ........................................... 0 °C to 70 °C Additional Information Click these links for more information: R 1 2 T Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge MD-SMB-004-a Device VDRM V @ 0 °C V(BO) V @ 70 °C TISP4500H3BJ 350 500 Device Symbol PRODUCT TECHNICAL INVENTORY SAMPLES SELECTOR LIBRARY CONTACT Agency Recognition T Description UL Rated for International Surge Wave Shapes File Number: E215609 ............UL Recognized Component Wave Shape Standard IPPSM A 2/10 μs GR-1089-CORE 500 10/250 μs GR-1089-CORE 230 10/700 μs ITU-T K.20/21/45 200 10/1000 μs GR-1089-CORE 100 R SD-TISP4xxx-001-a Description This device is designed to limit overvoltages on the telephone line to ±500 V over the temperature range. The minimum off-state voltage of ±350 V allows a.c. power contact voltages of up to 245 V rms to occur without clipping. The combination of these two voltages gives protection for components having ratings of 500 V or above and ensures the protector is non-conducting for the ITU-T recommendations K.20/21/45 230 V rms power cross test condition (test number 2.3.1). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as the diverted current subsides. How To Order Device TISP4500H3BJ Package SMB (DO-214AA) Carrier Order As Embossed Tape Reeled TISP4500H3BJR-S Marking Code Std. Qty. 4500H3 3000 WARNING Cancer and Reproductive Harm www.P65Warnings.ca.gov APRIL 2001 – REVISED JULY 2019 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4500H3BJ Overvoltage Protector Absolute Maximum Ratings, 0 °C ≤ TA ≤ 70 °C (Unless Otherwise Noted) Rating Repetitive peak off-state voltage Symbol Value Unit VDRM ±350 V Non-repetitive peak on-state pulse current (see Notes 1 and 2) TA = 25 °C TA = 25 °C 2/10 (Telcordia GR-1089-CORE, 2/10 μs voltage wave shape) 10/250 (Telcordia GR-1089-CORE, 10/250 μs voltage wave shape) 10/700 (ITU-T K.20/21/45, 5/310 s current wave shape) 10/1000 (Telcordia GR-1089-CORE, 10/1000 μs voltage wave shape) 500 230 200 100 IPPSM TA = 25 °C A Non-repetitive peak on-state current (see Notes 1, 2 and 3) ITSM ±55 ±2.0 A Junction temperature TJ -40 to +150 °C Storage temperature range Tstg -65 to +150 °C 50 Hz, 20 ms (1 cycle) 50 Hz, 1000 s NOTES: 1. Initially the device must be in thermal equilibrium. 2. The surge may be repeated after the device returns to its initial conditions. 3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Electrical Characteristics, 0 °C ≤ TA ≤ 70 °C (Unless Otherwise Noted) Parameter IDRM V(BO) V(BO) Test Conditions Repetitive peak offstate current Breakover voltage Impulse breakover voltage VD = VDRM dv/dt = ±250 V/ms, Max ±5 TA = 70 °C ±10 RSOURCE = 300 Ω Figure A.3-1/K.44 10/700 impulse generator Unit μA ±500 V ±500 V ±0.6 A ±10 μA Charge Voltage = ±4 kV Breakover current IH Holding current IT = ±5 A, di/dt = -/+30 mA/ms ID Off-state current VD = ±50 V Off-state capacitance Typ ITU-T recommendation K.44 (02/2000) I(BO) Coff Min TA = 25 °C dv/dt = ±250 V/ms, RSOURCE = 300 Ω ±0.15 A TA = 70 °C f = 1 MHz, Vd = 1 V rms, VD = 0 84 f = 1 MHz, Vd = 1 V rms, VD = -1 V 67 f = 1 MHz, Vd = 1 V rms, VD = -2 V 62 f = 1 MHz, Vd = 1 V rms, VD = -50 V 31 pF Thermal Characteristics Parameter Test Conditions Min Typ EIA/JESD51-3 PCB, IT = ITSM(1000), RθJA Junction to free air thermal resistance 4-layer PCB, IT = ITSM(1000), TA = 25 °C Unit 113 TA = 25 °C, (see Note 5) 265 mm x 210 mm populated line card, Max °C/W 50 NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. APRIL 2001 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4500H3BJ Overvoltage Protector Parameter Measurement Information +i Quadrant I IPPSM Switching Characteristic ITSM V(BO) I(BO) IH VD -v V(BR) I(BR) ID ID I(BR) V(BR) VD +v IH I(BO) V(BO) ITSM Quadrant III IPPSM Switching Characteristic -i PM4XAD Figure 1. Voltage-current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal APRIL 2001 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4500H3BJ Overvoltage Protector MECHANICAL DATA Recommended Printed Wiring Land Pattern Dimensions SMB Land Pattern 2.54 (.100) 2.40 (.094) 2.16 (.085) DIMENSIONS ARE: MM (INCHES) MDXXBIB Device Symbolization Code Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified. Device Symbolization Code TISP4500H3BJ 4500H3 Asia-Pacific: Tel: +886-2 2562-4117 • Email: asiacus@bourns.com EMEA: Tel: +36 88 885 877 • Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 • Email: americus@bourns.com www.bourns.com “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in the U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. APRIL 2001 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Legal Disclaimer Notice This legal disclaimer applies to purchasers and users of Bourns® products manufactured by or on behalf of Bourns, Inc. and P[ZHɉSPH[LZJVSSLJ[P]LS`¸)V\YUZ¹ Unless otherwise expressly indicated in writing, Bourns® products and data sheets relating thereto are subject to change ^P[OV\[UV[PJL