TISP4C290H3BJR-S

TISP4C115H3BJ THRU TISP4C350H3BJ LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4CxxxH3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region - Precise and Stable Voltage - Low Voltage Overshoot under Surge - Low Off-State Capacitance Agency Recognition Description VDRM V(BO) 90 115 TISP4C145H3BJ † TISP4C165H3BJ 120 135 145 165 TISP4C220H3BJ † TISP4C250H3BJ † 180 190 220 250 Device Name V TISP4C115H3BJ † TISP4C125H3BJ † V 100 TISP4C180H3BJ † File Number: E215609 SMB Package (Top View) 125 145 TISP4C290H3BJ † TISP4C350H3BJ † UL R 1 2 T 180 220 275 MD-SMB-004-a 290 350 Device Symbol T Rated for International Surge Wave Shapes IPPSM Wave Shape Standard 2/10 GR-1089-CORE 500 10/700 ITU-T K.20/21/45 150 10/1000 GR-1089-CORE 10/160 10/560 A 200 TIA-968-A R SD-TISP4xxx-001-a 100 TIA-968-A 100 .................................................... UL Recognized Component Description This device is designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current hellps prevent d.c. latchup as the diverted current subsides. Please contact your Bourns representative if the protection voltage you require is not listed. How to Order Device TISP4CxxxH3BJ Package SMB Carrier Embossed Tape Reeled Insert xxx corresponding to device name. Order As TISP4CxxxH3BJR-S Marking Code 4CxxxH SEPTEMBER 2004 – REVISED JULY 2019 WARNING Cancer and Reproductive Harm www.P65Warnings.ca.gov Std. Qty. 3000 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.  TISP4CxxxH3BJ Overvoltage Protector Series Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Symbol Value Unit VDRM ±90 ±100 ±120 ±135 ±145 ±180 ±190 ±220 ±275 V 2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape) 10/160 μs (TIA-968-A, 10/160 μs voltage wave shape) 5/310 μs (ITU-T K.44, 10/700 μs voltage wave shape used in K.20/21/45) 10/560 μs (TIA-968-A, 10/560 μs voltage wave shape) 10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape) IPPSM ±500 ±200 ±150 ±100 ±100 A 20 ms, 50 Hz (full sine wave) 1000 s, 50 Hz ITSM 30 2.1 A TJ -40 to +150 °C '4C115H3BJ '4C125H3BJ '4C145H3BJ '4C165H3BJ '4C180H3BJ '4C220H3BJ '4C250H3BJ '4C290H3BJ '4C350H3BJ Repetitive peak off-state voltage Non-repetitive peak impulse current (see Notes 1 and 2) Non-repetitive peak on-state current (see Notes 1, 2 and 3) Junction temperature Storage temperature range -65 to +150 Tstg °C NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C. 2. The surge may be repeated after the device returns to its initial conditions. 3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter IDRM V(BO) Repetitive peak off-state current Breakover voltage V(BO) Impulse breakover voltage I(BO) Breakover current VT IH CO On-state voltage Holding current Off-state capacitance Test Conditions VD = VDRM dv/dt = ±250 V/ms, RSOURCE = 300 Ω dv/dt ≤ ±1000 V/μs, Linear voltage ramp, Maximum ramp value = ±500 V di/dt = ±10 A/μs, Linear current ramp, Maximum ramp value = ±10 A dv/dt = ±250 V/ms, RSOURCE = 300 Ω TA = 25 °C TA = 85 °C Min f = 1 MHz, Vd = 1 V rms, VD = -2 V Unit ±5 ±10 μA ±115 ±125 ±145 ±165 ±180 ±220 ±250 ±290 ±350 '4C115H3BJ '4C125H3BJ '4C145H3BJ '4C165H3BJ '4C180H3BJ '4C220H3BJ '4C250H3BJ '4C290H3BJ '4C350H3BJ ±125 ±135 ±155 ±175 ±190 ±230 ±260 ±300 ±360 ±600 ±3 ±150 ±600 '4C115H3BJ '4C125H3BJ 50 '4C145H3BJ '4C165H3BJ '4C180H3BJ '4C220H3BJ '4C250H3BJ 45 '4C290H3BJ '4C350H3BJ SEPTEMBER 2004 – REVISED JULY 2019 Max '4C115H3BJ '4C125H3BJ '4C145H3BJ '4C165H3BJ '4C180H3BJ '4C220H3BJ '4C250H3BJ '4C290H3BJ '4C350H3BJ IT = ±5 A,t w = 100 μs IT = ±5 A, di/dt = ±30 mA/ms Typ V V mA V mA pF 40 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.  TISP4CxxxH3BJ Overvoltage Protector Series Thermal Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter RθJA Test Conditions Min EIA/JESD51-3 PCB, IT = ITSM(1000) (see Note 4) Junction to ambient thermal resistance Max Unit 113 °C/W 265 mm x 210 mm populated line card, 50 4-layer PCB, IT = ITSM(1000) NOTE: Typ 4. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. Parameter Measurement Information +i I PPSM Quadrant I Switching Characteristic ITSM ITRM IT V(BO) VT I(BO) IH V (BR)M V DRM -v I(BR) V (BR) VD V (BR) I(BR) IDRM ID ID IDRM VD +v V DRM V (BR)M IH I(BO) VT V(BO) IT ITRM ITSM Quadrant III Switching Characteristic I PPSM -i PM-TISP4xxx-001-a Figure 1. Voltage-Current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal SEPTEMBER 2004 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.  TISP4CxxxH3BJ TISP4xxxF3LM Overvoltage Protector Series Typical Characteristics NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE TC-TISP4C-002-a 1.1 Capacitance Normalized to VD = 2 V 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 TJ = 25 °C Vd = 1 Vrms 0.1 0.0 1 10 VD - Off-state Voltage - V 100 Asia-Pacific: Tel: +886-2 2562-4117 • Email: asiacus@bourns.com Europe: Tel: +36 88 885 877 • Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 • Email: americus@bourns.com www.bourns.com SEPTEMBER 2004 – REVISED JULY 2019 “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is registered in the U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Legal Disclaimer Notice This legal disclaimer applies to purchasers and users of Bourns® products manufactured by or on behalf of Bourns, Inc. and P[ZHɉSPH[LZJVSSLJ[P]LS`¸)V\YUZ¹ Unless otherwise expressly indicated in writing, Bourns® products and data sheets relating thereto are subject to change ^P[OV\[UV[PJL