TISP4C115H3BJ THRU TISP4C350H3BJ
LOW CAPACITANCE
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4CxxxH3BJ Overvoltage Protector Series
SMB Package (Top View)
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
- Low Voltage Overshoot under Surge
- Low Off-State Capacitance
Click these links for more information:
R 1
Device Name
VDRM
V
V(BO)
V
TISP4C115H3BJ †
TISP4C125H3BJ †
TISP4C145H3BJ †
TISP4C165H3BJ
TISP4C180H3BJ †
TISP4C220H3BJ †
TISP4C250H3BJ †
TISP4C290H3BJ †
TISP4C350H3BJ †
90
100
120
135
145
180
190
220
275
115
125
145
165
180
220
250
290
350
Additional Information
2 T
PRODUCT TECHNICAL INVENTORY SAMPLES
SELECTOR LIBRARY
CONTACT
MD-SMB-004-a
Agency Recognition
Device Symbol
Description
T
UL
File Number: E215609
............UL Recognized Component
R
SD-TISP4xxx-001-a
Rated for International Surge Wave
Shapes
Description
Wave
Shape
Standard
IPPSM
A
2/10
GR-1089-CORE
500
10/160
TIA-968-A
200
10/700
ITU-T K.20/21/45
150
10/560
TIA-968-A
100
10/1000
GR-1089-CORE
100
This device is designed to limit overvoltages on the telephone line. Overvoltages are
normally caused by a.c. power system or lightning flash disturbances which are induced
or conducted on to the telephone line. A single device provides 2-point protection and is
typically used for the protection of 2-wire telecommunication equipment (e.g. between the
Ring and Tip wires for telephones and modems). Combinations of devices can be used for
multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages
are initially clipped by breakdown clamping until the voltage rises to the breakover level,
which causes the device to crowbar into a low-voltage on state. This low-voltage on state
causes the current resulting from the overvoltage to be safely diverted through the device.
The high crowbar holding current hellps prevent d.c. latchup as the diverted current
subsides.
Please contact your Bourns representative if the protection voltage you require is not listed.
How to Order
Device
Package
Carrier
TISP4CxxxH3BJ
SMB
Embossed Tape Reeled
Order As
TISP4CxxxH3BJR-S
Marking
Code
Std. Qty.
4CxxxH
3000
Insert xxx corresponding to device name.
SEPTEMBER 2004 – REVISED JULY 2019
WARNING Cancer and Reproductive Harm
www.P65Warnings.ca.gov
*RoHS Directive 2015/863, Mar 31, 2015 and Annex.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of
this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4CxxxH3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
'4C115H3BJ
'4C125H3BJ
'4C145H3BJ
'4C165H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
'4C290H3BJ
'4C350H3BJ
Repetitive peak off-state voltage
Symbol
Value
Unit
VDRM
±90
±100
±120
±135
±145
±180
±190
±220
±275
V
IPPSM
±500
±200
±150
±100
±100
A
ITSM
30
2.1
A
TJ
-40 to +150
°C
Tstg
-65 to +150
°C
Non-repetitive peak impulse current (see Notes 1 and 2)
2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape)
10/160 μs (TIA-968-A, 10/160 μs voltage wave shape)
5/310 μs (ITU-T K.44, 10/700 μs voltage wave shape used in K.20/21/45)
10/560 μs (TIA-968-A, 10/560 μs voltage wave shape)
10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape)
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
20 ms, 50 Hz (full sine wave)
1000 s, 50 Hz
Junction temperature
Storage temperature range
NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C.
2. The surge may be repeated after the device returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths.
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
IDRM
V(BO)
Repetitive peak off-state current
Breakover voltage
Test Conditions
VD = VDRM
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
dv/dt ≤ ±1000 V/μs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±10 A/μs, Linear current ramp,
Maximum ramp value = ±10 A
V(BO)
Impulse breakover voltage
I(BO)
Breakover current
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
VT
On-state voltage
IT = ±5 A,t w = 100 μs
IH
Holding current
IT = ±5 A, di/dt = ±30 mA/ms
CO
Off-state capacitance
f = 1 MHz, Vd = 1 V rms, VD = -2 V
Max
Unit
TA = 25 °C
TA = 85 °C
Min
±5
±10
μA
'4C115H3BJ
'4C125H3BJ
'4C145H3BJ
'4C165H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
'4C290H3BJ
'4C350H3BJ
±115
±125
±145
±165
±180
±220
±250
±290
±350
'4C115H3BJ
'4C125H3BJ
'4C145H3BJ
'4C165H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
'4C290H3BJ
'4C350H3BJ
±125
±135
±155
±175
±190
±230
±260
±300
±360
±600
±150
Typ
V
mA
±3
V
±600
mA
'4C115H3BJ
'4C125H3BJ
50
'4C145H3BJ
'4C165H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
45
'4C290H3BJ
'4C350H3BJ
V
pF
40
SEPTEMBER 2004 – REVISED JULY 2019
Specifications are subject to change without notice. Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4CxxxH3BJ Overvoltage Protector Series
Thermal Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
RθJA
Test Conditions
Min
Junction to ambient thermal resistance
Max
Unit
113
°C/W
265 mm x 210 mm populated line card,
50
4-layer PCB, IT = ITSM(1000)
NOTE:
Typ
EIA/JESD51-3 PCB, IT = ITSM(1000)
(see Note 4)
4. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Parameter Measurement Information
+i
I PPSM
Quadrant I
Switching
Characteristic
ITSM
ITRM
IT
V(BO)
VT
I(BO)
IH
V (BR)M
V DRM
-v
I(BR)
V (BR)
V (BR)
I(BR)
IDRM
VD
ID
ID
IDRM
VD
+v
V DRM
V (BR)M
IH
I(BO)
VT
V(BO)
IT
ITRM
ITSM
Quadrant III
Switching
Characteristic
I PPSM
-i
PM-TISP4xxx-001-a
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
SEPTEMBER 2004 – REVISED JULY 2019
Specifications are subject to change without notice. Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4CxxxH3BJ Overvoltage Protector Series
Typical Characteristics
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE TC-TISP4C-002-a
1.1
Capacitance Normalized to VD = 2 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
TJ = 25 ϒC
Vd = 1 Vrms
0.1
0.0
1
10
VD - Off-state Voltage - V
100
Asia-Pacific: Tel: +886-2 2562-4117 • Email: asiacus@bourns.com
EMEA: Tel: +36 88 885 877 • Email: eurocus@bourns.com
The Americas: Tel: +1-951 781-5500 • Email: americus@bourns.com
www.bourns.com
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in the U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
SEPTEMBER 2004 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
Legal Disclaimer Notice
This legal disclaimer applies to purchasers and users of Bourns® products manufactured by or on behalf of Bourns, Inc. and
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Unless otherwise expressly indicated in writing, Bourns® products and data sheets relating thereto are subject to change
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