TISP61089HDMR-S

TISP61089HDMR-S

  • 厂商:

    BOURNS(伯恩斯)

  • 封装:

    SOIC8_150MIL

  • 描述:

  • 详情介绍
  • 数据手册
  • 价格&库存
TISP61089HDMR-S 数据手册
TISP61089HDM DUAL FORWARD-CONDUCTING P-GATE THYRISTOR PROGRAMMABLE OVERVOLTAGE PROTECTOR TISP61089HDM Overvoltage Protector Additional Information Intended for Use in GR-1089-CORE Issue 3 Compliant Line Cards Click these links for more information: Dual, Voltage-Programmable SLIC Protector – Low 15 mA max. Gate Triggering Current – Supports Battery Voltages Down to -155 V – High 150 mA min. Holding Current PRODUCT TECHNICAL INVENTORY SAMPLES SELECTOR LIBRARY Agency Recognition Rated for GR-1089-CORE Issue 3 Conditions GR-1089-CORE Test Impulse Waveshape Section 4.6.7 4.6.8 2/10 4.6.7 4.6.7.1 10/1000 Test # 4 1 1, 3 1 IPPSM A 500 100 Meets GR-1089-CORE First Level A.C. Power Fault Conditions GR-1089-CORE Section 4.6.10 Test # I RMS Power Fault Duration A s 2 0.33 0.17 900 1 3 4 1 1 8 3 1.1 5 File Number: E215609 8-SOIC (210 mil) Package (Top View) 1 8 K1 (Tip) 2 7 A (Ground) NC 3 6 A (Ground) K2 4 5 K2 (Ring) K1 (Tip) (Gate) G (Ring) NC - No internal connection Terminal typical application names shown in parenthesis 1 30 9 UL 1 0.5 2.2 Description 900 6 7 CONTACT MD-8SOIC(210)-001-b 2 Device Symbol 0.4 K1 K1 GR-1089-CORE Second Level A.C. Power Fault Conditions are Detailed in the ‘Applications Information’ Section ����������������������������������������������������� UL Recognized Component A G A K2 K2 The negative protection voltage is controlled by the voltage, VGG, applied to the G terminal. SD-TISP6-001-a How To Order Device TISP61089HDM Package 8-SOIC (210 mil) Carrier Embossed Tape Reeled Order As TISP61089HDMR-S MAY 2004 – REVISED APRIL 2022 WARNING Cancer and Reproductive Harm www.P65Warnings.ca.gov Marking Code 61089H Standard Quantity 2000 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP61089HDM Overvoltage Protector Description The TISP61089HDM is a dual forward-conducting buffered p-gate thyristor (SCR) overvoltage protector. It is designed to protect monolithic SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. The TISP61089HDM limits voltages that exceed the SLIC supply rail voltage. The TISP61089HDM parameters are specified to allow equipment compliance with Telcordia GR-1089-CORE, Issue 3 and ITU-T recommendations K.20, K.21 and K.45. The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of -20 V to -155 V. The protector gate is connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. The protection voltage will then track the negative supply voltage and the overvoltage stress on the SLIC is minimized. Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then the protector SCR will switch into a low voltage on-state condition. As the overvoltage subsides the high holding current of TISP61089HDM SCR prevents d.c. latchup. The TISP61089HDM is designed to be used with a pair of Bourns® SF-3812TM125T-2 fuses for overcurrent protection. Level 2 power fault compliance requires the series overcurrent element to become open-circuit or high impedance. For equipment compliant to ITU-T recommendations K.20, K.21 or K.45 only, the series resistor value is set by the coordination requirements. For coordination with a 400 V limit GDT, a minimum series resistor value of 6.5 Ω is recommended. Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Repetitive peak off-state voltage, VGK = 0 Rating Symbol Value Unit VGKRM -167 V IPPSM 100 150 100 500 500 A ITSM 7.7 6.1 4.8 3.7 2.8 2.6 A TJ -40 to +150 °C -65 to +150 °C VDRM Repetitive peak gate-cathode voltage, VKA = 0 Non-repetitive peak impulse current (see Notes 1, 2 and 3) 10/1000 μs (Telcordia GR-1089-CORE, Issue 3) 5/310 μs (ITU-T K.20, K.21 & K.45, K.44 open-circuit voltage wave shape 10/700 μs) 10/360 μs (Telcordia GR-1089-CORE, Issue 3) 1.2/50 μs voltage waveshape (Telcordia GR-1089-CORE, Issue 3), including 3 Ω non-inductive resistor 2/10 μs (Telcordia GR-1089-CORE, Issue 3) Non-repetitive peak on-state current, 50 Hz / 60 Hz (see Notes 1, 2, 3 and 4) 0.5 s 1s 2s 5s 30 s 900 s Junction temperature Storage temperature range Tstg -170 V NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the device returns to its initial conditions. 2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair). Ratings are obtained by using the gate circuitry as shown in Fig. 3. 3. Rated currents only apply if pins 1 & 8 (T ip) are connected together, pins 4 & 5 (Ring) are connected together and pins 6 & 7 (Anode) are connected together. 4. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm printed wiring track widths. Parameter ID Off-state current Gate-cathode impulse VGK(BO) MAY 2004 – REVISED breakover APRIL 2022 voltage Test Conditions VD = VDRM, VGK = 0 10/1000 μs, ITM = 100 A, VGG = -100 V 5/310 μs, ITM = 150 A, VGG = -100 V 2/10 μs, ITM = 200 A, VGG = -100 V (see Note 5) TA = 25 °C TA = 85 °C Min Typ Max Unit -5 A -50 12 12 20 V 6 7 10 V Specifications are subject to change without notice. Users should performance in their specific applications. Forward voltage IF = 5 A, tW = 200 μs 3 V VF verify actual device The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. VFRM Peak forward recovery voltage 10/1000 μs, IF = 100 A, VGG = -100 V 5/310 μs, IF = 150 A, VGG = -100 V 2/10 μs, IF = 200 A, VGG = -100 V (see Note 5) Storage temperature range -65 to +150 Tstg °C NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the device returns to its initial conditions. 2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair). Ratings are obtained by using the gate circuitry as shown in Fig. 3. 3. Rated currents only apply if pins 1 & 8 (T ip) are connected together, pins 4 & 5 (Ring) are connected together and pins 6 & 7 (Anode) are connected together. 4. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm printed wiring track widths. TISP61089HDM Overvoltage Protector Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter Test Conditions ID Off-state current VGK(BO) Gate-cathode impulse breakover voltage VF Forward voltage VFRM Peak forward recovery voltage IH Holding current IGKS Gate reverse current VGG = VGK = VGKRM, VKA = 0 Gate trigger current IT = -3 A, tp(g) ≥ 20 μs, VGG = -100 V IGT VGT CKA NOTE: Gate-cathode trigger voltage Cathode-anode off-state capacitance VD = VDRM, VGK = 0 10/1000 μs, ITM = 100 A, VGG = -100 V 5/310 μs, ITM = 150 A, VGG = -100 V 2/10 μs, ITM = 200 A, VGG = -100 V (see Note 5) TA = 25 °C TA = 85 °C Min Typ Max Unit -5 µA -50 IF = 5 A, tW = 200 μs 10/1000 μs, IF = 100 A, VGG = -100 V 5/310 μs, IF = 150 A, VGG = -100 V 2/10 μs, IF = 200 A, VGG = -100 V (see Note 5) IT = -1 A, di/dt = 1 A/ms, VGG = -100 V 12 12 20 V 3 V 6 7 10 V -150 mA TA = 25 °C TA = 85 °C I T = -3 A, tp(g) ≥ 20 μs, VGG = -100 V f = 1 MHz, Vd = 1 V rms, VD = -50 V, IG = 0 -5 -50 µA 15 mA 2.5 V 40 pF 5. Voltage measurements should be made with an oscilloscope with limited bandwidth (20 MHz) to avoid high frequency noise. Thermal Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter RθJA NOTE Test Conditions EIA/JESD51-7 PCB, EIA/JESD51-2 Environment, PTOT = 4 W Junction to ambient thermal resistance (See Note 6) Min Typ Max Unit 55 °C/W 6. EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm printed wiring track widths. MAY 2004 – REVISED APRIL 2022 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP61089HDM Overvoltage Protector Parameter Measurement Information IPPSM +i Quadrant I Forward Conduction Characteristic IFSM (= |ITSM|) IF VF V GK(BO) V GG -v VD +v ID I(BO) IH IS V(BO) VT VS IT ITSM Quadrant III IPPSM Switching Characteristic -i PM-TISP6-001-a Figure 1. Voltage-Current Characteristic Unless Otherwise Noted, All Voltages are Referenced to the Anode Thermal Information ITSM(t) - Non-Repetitive Peak On-State Current - A NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION TI-TISP6-001-a 15 V GEN = 600 Vrms, 50/60 Hz RGEN = 1.4 x V GEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-7 PCB, TA = 25 °C SIMULTANEOUS OPERATION OF R AND T TERMINALS. 10 9 8 7 6 5 4 3 2 1.5 1 0.1 1 10 100 1000 t - Current Duration - s Figure 2. MAY 2004 – REVISED APRIL 2022 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP61089HDM Overvoltage Protector APPLICATIONS INFORMATION SLIC SLIC PROTECTOR Fuse Tip F1a SF-3812TM125T-2 Ring F1b SF-3812TM125T-2 TISP 61089HDM 10 kΩ 1.0 Ω C1 220 nF D1 D2 -V BAT AI-TISP6-001-b Figure 3. Line Protection with TISP61089HDM Figure 3 illustrates how a typical SLIC protection circuit may look for a TISP61089HDM and a pair of Bourns® SinglFuse™ Telefuse™ Telecom Protectors. This is a generic circuit that is designed to withstand both lightning surge testing and AC power fault testing. As applications can differ, it is recommended you contact your Bourns representative for detailed applications guidance on your specific design. MAY 2004 – REVISED APRIL 2022 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP61089HDM Overvoltage Protector APPLICATIONS INFORMATION (Continued) 15 PEAK AC vs CURRENT DURATION 60 50 40 AI-TISP6-002-a 20 TISP61089HDM ITSM 3 2 1.5 1 0.7 0.6 0.5 0.4 10 8 7 6 5 4 3 GR-1089 First Level Tests TISP61089HDM SF-3812TM125T-2 2 0.3 0.2 0.15 0.1 AI-TISP6-003-a 30 7 6 5 4 RMS Current - A Peak 50 Hz / 60 Hz Current - A 10 TYPICAL TIME TO OPEN vs CURRENT 1 10 100 1000 1 0.01 t - Current Duration - s Figure 4. 0.1 1 10 100 1000 t - Current Duration - s Figure 5. GR-1089-CORE Issue A.C. Power Fault testing has been comprehended in the design of the TISP61089HDM. For compliance, circuit designs must pass both First Level and Second Level A.C. Power Fault testing. First Level Power Fault testing requires that the equipment shall not be damaged and continues to operate correctly without disruption to other parts of the system. In laboratory tests it has been shown that the circuit shown in Figure 3 can pass these tests without damage. Figure 4 shows the TISP61089HDM ITSM rating to be above the level of GR-1089-CORE First Level tests. Second Level Power Fault testing may result in the equipment becoming non-operational, but any component failure should not allow the equipment to become a hazard. The system should not burn, fragment, or become an electrical safety hazard. The test data in Figure 5 illustrates that the TISP61089HDM and the SF-3812TM125T-2 are current coordinated, as the fuse interrupt time is shorter than the time it takes to damage the TISP61089HDM package for a given current. Asia-Pacific: Tel: +886-2 2562-4117 • Email: asiacus@bourns.com EMEA: Tel: +36 88 885 877 • Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 • Email: americus@bourns.com www.bourns.com “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in the U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. MAY 2004 – REVISED APRIL 2022 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Legal Disclaimer Notice This legal disclaimer applies to purchasers and users of Bourns® products manufactured by or on behalf of Bourns, Inc. and its affiliates (collectively, “Bourns”). Unless otherwise expressly indicated in writing, Bourns® products and data sheets relating thereto are subject to change without notice. Users should check for and obtain the latest relevant information and verify that such information is current and complete before placing orders for Bourns® products. The characteristics and parameters of a Bourns® product set forth in its data sheet are based on laboratory conditions, and statements regarding the suitability of products for certain types of applications are based on Bourns’ knowledge of typical requirements in generic applications. The characteristics and parameters of a Bourns® product in a user application may vary from the data sheet characteristics and parameters due to (i) the combination of the Bourns® product with other components in the user’s application, or (ii) the environment of the user application itself. The characteristics and parameters of a Bourns® product also can and do vary in different applications and actual performance may vary over time. Users should always verify the actual performance of the Bourns® product in their specific devices and applications, and make their own independent judgments regarding the amount of additional test margin to design into their device or application to compensate for differences between laboratory and real world conditions. Unless Bourns has explicitly designated an individual Bourns® product as meeting the requirements of a particular industry standard (e.g., ISO/TS 16949) or a particular qualification (e.g., UL listed or recognized), Bourns is not responsible for any failure of an individual Bourns® product to meet the requirements of such industry standard or particular qualification. Users of Bourns® products are responsible for ensuring compliance with safety-related requirements and standards applicable to their devices or applications. Bourns® products are not recommended, authorized or intended for use in nuclear, lifesaving, life-critical or life-sustaining applications, nor in any other applications where failure or malfunction may result in personal injury, death, or severe property or environmental damage. Unless expressly and specifically approved in writing by two authorized Bourns representatives on a case-by-case basis, use of any Bourns® products in such unauthorized applications might not be safe and thus is at the user’s sole risk. Life-critical applications include devices identified by the U.S. Food and Drug Administration as Class III devices and generally equivalent classifications outside of the United States. 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Further, Bourns® products and Bourns technology and technical data may not under any circumstance be exported or re-exported to countries subject to international sanctions or embargoes. Bourns® products may not, without prior authorization from Bourns and/or the U.S. Government, be resold, transferred, or re-exported to any party not eligible to receive U.S. commodities, software, and technical data. To the maximum extent permitted by applicable law, Bourns disclaims (i) any and all liability for special, punitive, consequential, incidental or indirect damages or lost revenues or lost profits, and (ii) any and all implied warranties, including implied warranties of fitness for particular purpose, non-infringement and merchantability. For your convenience, copies of this Legal Disclaimer Notice with German, Spanish, Japanese, Traditional Chinese and Simplified Chinese bilingual versions are available at: Web Page: http://www.bourns.com/legal/disclaimers-terms-and-policies PDF: http://www.bourns.com/docs/Legal/disclaimer.pdf C1753 05/17/18R
TISP61089HDMR-S
物料型号:TISP61089HDM

器件简介:TISP61089HDM是一款双正向导电缓冲P-GATE可控硅过压保护器,设计用于保护单片SLIC(用户线路接口电路)免受雷电、交流电源接触和感应引起的电话线上过电压。它限制了超过SLIC供电轨电压的电压。该器件的参数被指定以允许设备符合Telcordia GR-1089-CORE Issue 3和ITU-T建议K.20、K.21和K.45。

引脚分配:8-SOIC (210 mil)封装,引脚1为K1(Tip),引脚8为K1(Ground),引脚7为G(Gate),引脚6和7为A(Anode),引脚4和5为K2(Ring)。

参数特性:包括但不限于关态电流、门-阴极脉冲反向击穿电压、正向电压、峰值正向恢复电压、保持电流、门反向电流、门触发电流、门-阴极触发电压和阴极-阳极关态电容等。

功能详解:TISP61089HDM通过将保护电压参考到负电源电压来最小化对SLIC的过电压压力。正向过电压通过二极管正向导电被钳位到地,负向过电压最初被钳位接近SLIC负电源轨值。如果过电压提供足够的电流,则保护器SCR将切换到低电压导通状态条件。随着过电压的消退,TISP61089HDM SCR的高保持电流防止直流锁定。

应用信息:TISP61089HDM设计用于与Bourns® SF-3812TM125T-2保险丝配对使用,以提供过流保护。第二级电源故障合规性要求串联过流元件变为开路或高阻抗。对于仅符合ITU-T建议K.20、K.21或K.45的设备,串联电阻值由协调要求设置。对于与400V限制GDT协调,建议最小串联电阻值为6.5Ω。

封装信息:8-SOIC (210 mil)封装,标记代码为61089H,标准数量为000。
TISP61089HDMR-S 价格&库存

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TISP61089HDMR-S
    •  国内价格
    • 1+4.07808
    • 50+3.97440
    • 500+3.87072

    库存:0

    TISP61089HDMR-S
    •  国内价格
    • 1+1.98240

    库存:4