TISP61089HDM
DUAL FORWARD-CONDUCTING P-GATE THYRISTOR
PROGRAMMABLE OVERVOLTAGE PROTECTOR
TISP61089HDM Overvoltage Protector
Additional Information
Intended for Use in GR-1089-CORE Issue 3 Compliant
Line Cards
Click these links for
more information:
Dual, Voltage-Programmable SLIC Protector
– Low 15 mA max. Gate Triggering Current
– Supports Battery Voltages Down to -155 V
– High 150 mA min. Holding Current
PRODUCT TECHNICAL INVENTORY SAMPLES
SELECTOR LIBRARY
Agency Recognition
Rated for GR-1089-CORE Issue 3 Conditions
GR-1089-CORE Test
Impulse Waveshape
Section
4.6.7
4.6.8
2/10
4.6.7
4.6.7.1
10/1000
Test #
4
1
1, 3
1
IPPSM
A
500
100
Meets GR-1089-CORE First Level A.C. Power Fault Conditions
GR-1089-CORE
Section 4.6.10
Test #
I RMS
Power Fault Duration
A
s
2
0.33
0.17
900
1
3
4
1
1
8
3
1.1
5
File Number: E215609
8-SOIC (210 mil) Package (Top View)
1
8
K1 (Tip)
2
7
A
(Ground)
NC
3
6
A
(Ground)
K2
4
5
K2 (Ring)
K1
(Tip)
(Gate) G
(Ring)
NC - No internal connection
Terminal typical application names shown in
parenthesis
1
30
9
UL
1
0.5
2.2
Description
900
6
7
CONTACT
MD-8SOIC(210)-001-b
2
Device Symbol
0.4
K1
K1
GR-1089-CORE Second Level A.C. Power Fault Conditions are
Detailed in the ‘Applications Information’ Section
����������������������������������������������������� UL Recognized Component
A
G
A
K2
K2
The negative protection voltage is
controlled by the voltage, VGG,
applied to the G terminal.
SD-TISP6-001-a
How To Order
Device
TISP61089HDM
Package
8-SOIC (210 mil)
Carrier
Embossed Tape Reeled
Order As
TISP61089HDMR-S
MAY 2004 – REVISED APRIL 2022
WARNING Cancer and Reproductive Harm
www.P65Warnings.ca.gov
Marking Code
61089H
Standard Quantity
2000
*RoHS Directive 2015/863, Mar 31, 2015 and Annex.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of
this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP61089HDM Overvoltage Protector
Description
The TISP61089HDM is a dual forward-conducting buffered p-gate thyristor (SCR) overvoltage protector. It is designed to protect monolithic
SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction.
The TISP61089HDM limits voltages that exceed the SLIC supply rail voltage. The TISP61089HDM parameters are specified to allow
equipment compliance with Telcordia GR-1089-CORE, Issue 3 and ITU-T recommendations K.20, K.21 and K.45.
The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of -20 V to -155 V. The protector gate is
connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. The protection voltage will
then track the negative supply voltage and the overvoltage stress on the SLIC is minimized.
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC
negative supply rail value. If sufficient current is available from the overvoltage, then the protector SCR will switch into a low voltage on-state
condition. As the overvoltage subsides the high holding current of TISP61089HDM SCR prevents d.c. latchup.
The TISP61089HDM is designed to be used with a pair of Bourns® SF-3812TM125T-2 fuses for overcurrent protection. Level 2 power fault
compliance requires the series overcurrent element to become open-circuit or high impedance. For equipment compliant to ITU-T recommendations K.20, K.21 or K.45 only, the series resistor value is set by the coordination requirements. For coordination with a 400 V limit GDT, a
minimum series resistor value of 6.5 Ω is recommended.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Repetitive peak off-state voltage, VGK = 0
Rating
Symbol
Value
Unit
VGKRM
-167
V
IPPSM
100
150
100
500
500
A
ITSM
7.7
6.1
4.8
3.7
2.8
2.6
A
TJ
-40 to +150
°C
-65 to +150
°C
VDRM
Repetitive peak gate-cathode voltage, VKA = 0
Non-repetitive peak impulse current (see Notes 1, 2 and 3)
10/1000 μs (Telcordia GR-1089-CORE, Issue 3)
5/310 μs (ITU-T K.20, K.21 & K.45, K.44 open-circuit voltage wave shape 10/700 μs)
10/360 μs (Telcordia GR-1089-CORE, Issue 3)
1.2/50 μs voltage waveshape (Telcordia GR-1089-CORE, Issue 3), including 3 Ω non-inductive resistor
2/10 μs (Telcordia GR-1089-CORE, Issue 3)
Non-repetitive peak on-state current, 50 Hz / 60 Hz (see Notes 1, 2, 3 and 4)
0.5 s
1s
2s
5s
30 s
900 s
Junction temperature
Storage temperature range
Tstg
-170
V
NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the device returns to its initial
conditions.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the
rated current value of an individual terminal pair). Ratings are obtained by using the gate circuitry as shown in Fig. 3.
3. Rated currents only apply if pins 1 & 8 (T ip) are connected together, pins 4 & 5 (Ring) are connected together and pins 6 & 7
(Anode) are connected together.
4. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm
printed wiring track widths.
Parameter
ID
Off-state current
Gate-cathode impulse
VGK(BO)
MAY
2004 – REVISED breakover
APRIL 2022
voltage
Test Conditions
VD = VDRM, VGK = 0
10/1000 μs, ITM = 100 A, VGG = -100 V
5/310 μs, ITM = 150 A, VGG = -100 V
2/10 μs, ITM = 200 A, VGG = -100 V (see Note 5)
TA = 25 °C
TA = 85 °C
Min Typ Max Unit
-5
A
-50
12
12
20
V
6
7
10
V
Specifications are subject to change without notice.
Users should
performance
in their specific applications.
Forward
voltage
IF = 5 A, tW = 200 μs
3
V
VF verify actual device
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
VFRM
Peak forward recovery voltage
10/1000 μs, IF = 100 A, VGG = -100 V
5/310 μs, IF = 150 A, VGG = -100 V
2/10 μs, IF = 200 A, VGG = -100 V (see Note 5)
Storage temperature range
-65 to +150
Tstg
°C
NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the device returns to its initial
conditions.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the
rated current value of an individual terminal pair). Ratings are obtained by using the gate circuitry as shown in Fig. 3.
3. Rated currents only apply if pins 1 & 8 (T ip) are connected together, pins 4 & 5 (Ring) are connected together and pins 6 & 7
(Anode) are connected together.
4. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm
printed wiring track widths.
TISP61089HDM Overvoltage Protector
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
ID
Off-state current
VGK(BO)
Gate-cathode impulse
breakover voltage
VF
Forward voltage
VFRM
Peak forward recovery voltage
IH
Holding current
IGKS
Gate reverse current
VGG = VGK = VGKRM, VKA = 0
Gate trigger current
IT = -3 A, tp(g) ≥ 20 μs, VGG = -100 V
IGT
VGT
CKA
NOTE:
Gate-cathode trigger voltage
Cathode-anode off-state capacitance
VD = VDRM, VGK = 0
10/1000 μs, ITM = 100 A, VGG = -100 V
5/310 μs, ITM = 150 A, VGG = -100 V
2/10 μs, ITM = 200 A, VGG = -100 V (see Note 5)
TA = 25 °C
TA = 85 °C
Min Typ Max Unit
-5
µA
-50
IF = 5 A, tW = 200 μs
10/1000 μs, IF = 100 A, VGG = -100 V
5/310 μs, IF = 150 A, VGG = -100 V
2/10 μs, IF = 200 A, VGG = -100 V (see Note 5)
IT = -1 A, di/dt = 1 A/ms, VGG = -100 V
12
12
20
V
3
V
6
7
10
V
-150
mA
TA = 25 °C
TA = 85 °C
I T = -3 A, tp(g) ≥ 20 μs, VGG = -100 V
f = 1 MHz, Vd = 1 V rms, VD = -50 V, IG = 0
-5
-50
µA
15
mA
2.5
V
40
pF
5. Voltage measurements should be made with an oscilloscope with limited bandwidth (20 MHz) to avoid high frequency noise.
Thermal Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
RθJA
NOTE
Test Conditions
EIA/JESD51-7 PCB, EIA/JESD51-2 Environment, PTOT = 4 W
Junction to ambient thermal resistance
(See Note 6)
Min Typ Max
Unit
55
°C/W
6. EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm printed wiring track widths.
MAY 2004 – REVISED APRIL 2022
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP61089HDM Overvoltage Protector
Parameter Measurement Information
IPPSM
+i
Quadrant I
Forward
Conduction
Characteristic
IFSM (= |ITSM|)
IF
VF
V GK(BO)
V GG
-v
VD
+v
ID
I(BO)
IH
IS
V(BO)
VT
VS
IT
ITSM
Quadrant III
IPPSM
Switching
Characteristic
-i
PM-TISP6-001-a
Figure 1. Voltage-Current Characteristic
Unless Otherwise Noted, All Voltages are Referenced to the Anode
Thermal Information
ITSM(t) - Non-Repetitive Peak On-State Current - A
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
TI-TISP6-001-a
15
V GEN = 600 Vrms, 50/60 Hz
RGEN = 1.4 x V GEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-7 PCB, TA = 25 °C
SIMULTANEOUS OPERATION
OF R AND T TERMINALS.
10
9
8
7
6
5
4
3
2
1.5
1
0.1
1
10
100
1000
t - Current Duration - s
Figure 2.
MAY 2004 – REVISED APRIL 2022
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP61089HDM Overvoltage Protector
APPLICATIONS INFORMATION
SLIC
SLIC
PROTECTOR
Fuse
Tip
F1a
SF-3812TM125T-2
Ring
F1b
SF-3812TM125T-2
TISP
61089HDM
10 kΩ
1.0 Ω
C1
220 nF
D1
D2
-V BAT
AI-TISP6-001-b
Figure 3. Line Protection with TISP61089HDM
Figure 3 illustrates how a typical SLIC protection circuit may look for a TISP61089HDM and a pair of Bourns® SinglFuse™ Telefuse™ Telecom
Protectors. This is a generic circuit that is designed to withstand both lightning surge testing and AC power fault testing. As applications can
differ, it is recommended you contact your Bourns representative for detailed applications guidance on your specific design.
MAY 2004 – REVISED APRIL 2022
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP61089HDM Overvoltage Protector
APPLICATIONS INFORMATION (Continued)
15
PEAK AC
vs
CURRENT DURATION
60
50
40
AI-TISP6-002-a
20
TISP61089HDM ITSM
3
2
1.5
1
0.7
0.6
0.5
0.4
10
8
7
6
5
4
3
GR-1089 First Level Tests
TISP61089HDM
SF-3812TM125T-2
2
0.3
0.2
0.15
0.1
AI-TISP6-003-a
30
7
6
5
4
RMS Current - A
Peak 50 Hz / 60 Hz Current - A
10
TYPICAL TIME TO OPEN
vs
CURRENT
1
10
100
1000
1
0.01
t - Current Duration - s
Figure 4.
0.1
1
10
100
1000
t - Current Duration - s
Figure 5.
GR-1089-CORE Issue A.C. Power Fault testing has been comprehended in the design of the TISP61089HDM. For compliance, circuit designs
must pass both First Level and Second Level A.C. Power Fault testing.
First Level Power Fault testing requires that the equipment shall not be damaged and continues to operate correctly without disruption to other
parts of the system. In laboratory tests it has been shown that the circuit shown in Figure 3 can pass these tests without damage. Figure 4
shows the TISP61089HDM ITSM rating to be above the level of GR-1089-CORE First Level tests.
Second Level Power Fault testing may result in the equipment becoming non-operational, but any component failure should not allow the
equipment to become a hazard. The system should not burn, fragment, or become an electrical safety hazard. The test data in Figure 5
illustrates that the TISP61089HDM and the SF-3812TM125T-2 are current coordinated, as the fuse interrupt time is shorter than the time it
takes to damage the TISP61089HDM package for a given current.
Asia-Pacific: Tel: +886-2 2562-4117 • Email: asiacus@bourns.com
EMEA: Tel: +36 88 885 877 • Email: eurocus@bourns.com
The Americas: Tel: +1-951 781-5500 • Email: americus@bourns.com
www.bourns.com
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in the U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
MAY 2004 – REVISED APRIL 2022
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
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C1753 05/17/18R