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BL-PWA-SJS-C10

BL-PWA-SJS-C10

  • 厂商:

    BRIGHT(博瑞泰)

  • 封装:

  • 描述:

    BL-PWA-SJS-C10 - Power DOMILED AlInGaP High brightness surface mount LED. - BRIGHT LED ELECTRONICS C...

  • 数据手册
  • 价格&库存
BL-PWA-SJS-C10 数据手册
AMERICAN BRIGHT OPTOELECTRONICS CORP. Power DOMILED AlInGaP BL-PW Series • Feature: 1. High brightness surface mount LED. 2. 120° viewing angle. 3. Small package outline (LxWxH) of 2.8 x 3.2 x 1.8 mm. 4. Qualified according to JEDEC moisture sensitivity Level 2. 5. Compatible to both IR reflow soldering and TTW soldering. • Package Dimension: Recommended Solder Pad V.6 Page: 1 of 7 AMERICAN BRIGHT OPTOELECTRONICS CORP. • Power DOMILED AlInGaP BL-PW Series Optical Characteristics: Part Number Chip Technology Color AlInGaP / Super Red, 632nm Viewing angle 120 Total Flux @ IF=50mA, mlm (typ) 750 Luminous Intensity @ IF=50mA 180.0 – 450.0 180.0 – 224.0 224.0 – 285.0 285.0 – 355.0 355.0 – 450.0 BL-PWS-SJS-C10 • • • • BIN S1 BIN S2 BIN T1 BIN T2 BL-PWR-SJS-C10 • • • • BIN T1 BIN T2 BIN U1 BIN U2 AlInGaP / Red, 625nm 120 900 285.0 – 715.0 285.0 – 355.0 355.0 – 450.0 450.0 – 560.0 560.0 – 715.0 BL-PWR-TJS-C10 • • • • BIN U1 BIN U2 BIN V1 BIN V2 TS AlInGaP / Red, 625nm 120 2000 450.0 – 1125.0 450.0 – 560.0 560.0 – 715.0 715.0 – 900.0 900.0 – 1125.0 BL-PWA-SJS-C10 • • • • BIN U1 BIN U2 BIN V1 BIN V2 AlInGaP / Amber, 615nm 120 1400 450.0 – 1125.0 450.0 – 560.0 560.0 – 715.0 715.0 – 900.0 900.0 – 1125.0 BL-PWA-TJS-C10 • • • • BIN V1 BIN V2 BIN W1 BIN W2 TS AlInGaP / Amber, 615nm 120 3000 715.0 – 1800.0 715.0 – 900.0 900.0 – 1125.0 1125.0 – 1400.0 1400.0 – 1800.0 BL-PWO-SJS-C10 • • • • BIN U1 BIN U2 BIN V1 BIN V2 AlInGaP / Orange, 605nm 120 1400 450.0 – 1125.0 450.0 – 560.0 560.0 – 715.0 715.0 – 900.0 900.0 – 1125.0 BL-PWY-SJS-C10 • • • BIN U1 BIN U2 BIN V1 AlInGaP / Yellow, 587nm 120 1000 450.0 – 900.0 450.0 – 560.0 560.0 – 715.0 715.0 – 900.0 BL-PWY-TJS-C10 • • • • BIN U1 BIN U2 BIN V1 BIN V2 TS AlInGaP / Yellow, 587nm 120 1600 450.0 – 1125.0 450.0 – 560.0 560.0 – 715.0 715.0 – 900.0 900.0 – 1125.0 V.6 Page: 2 of 7 AMERICAN BRIGHT OPTOELECTRONICS CORP. Power DOMILED AlInGaP BL-PW Series Note: 1. Other luminous intensity groups are also available upon request. 2. Luminous intensity is measured with an accuracy of ±11%. 3. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel. 4. An optional Vf binning is also available upon request. Binning scheme is as per following table. • Absolute Maximum Ratings: Maximum Value 70 100 5 125 -40 … +100 -40 … +100 225 Unit mA mA V °C °C °C mW Parameter DC forward current. Peak pulse current; (tp ≤ 10 µs, Duty cycle = 0.1) Reverse voltage. LED junction temperature. Operating temperature. Storage temperature. Power dissipation (at room temperature) • Vf Binning: Vf Bin @ 50mA Standard Forward voltage (V) 2.1 (typ. - AlInGaP), 2.5 (typ. – TS AlInGaP), 3.20 (max) 50 51 52 53 54 1.70 … 2.00 2.00 … 2.30 2.30 … 2.60 2.60 … 2.90 2.90 … 3.20 Forward voltage, Vf is measured with an accuracy of ±0.1 V. V.6 Page: 3 of 7 AMERICAN BRIGHT OPTOELECTRONICS CORP. • Power DOMILED AlInGaP BL-PW Series Wavelength Grouping: Color BL-PWS, Super-red BL-PWR-SJ, Red BL-PWR-TJ; Red (TS) BL-PWA, Amber Group Full Full Full Full W X BL-PWO, Orange Full W X Y Z BL-PWY, Yellow Full W X Y Z Wavelength is measured with an accuracy of ±1 nm. Wavelength distribution (nm) 625 – 640 620 – 630 620 - 635 610 – 621 610 - 615 615 - 621 600 - 612 600 - 603 603 - 606 606 - 609 609 - 612 582 - 594 582 - 585 585 - 588 588 - 591 591 - 594 V.6 Page: 4 of 7 AMERICAN BRIGHT OPTOELECTRONICS CORP. • Power DOMILED AlInGaP BL-PW Series Typical electro-optical characteristics curves: Fig.1 Relative luminous intensity vs. forward current. Intensity vs. DC Forward Current 90 Fig.2 Forward current vs. forward voltage. Forw ard Current (m A) vs. Forw ard Voltage Relative intensity. Normalized at 50 mA. 1.4 1.2 Forward Current (mA) 80 70 60 50 TS AlInGaP 40 30 20 A S AlInG aP 1 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 70 80 FORWARD CURRENT (mA) 10 0 1.5 2 2.5 Forw ard Voltage (V) 3 Fig.3 Radiation pattern. 30° 20° 10° 0° 1.0 Fig.4 Maximum forward current vs. ambient temperature. 80 70 40° 0.8 Forward Current, If 60 50 50° 0.6 40 MTTF > 10000 h 60° 70° 80° 90° 0.4 30 20 0.2 10 0 0 0 10 20 30 40 50 60 70 80 90 100 Am bient Tem perature Fig.5 Relative Intensity vs. Wavelength Relative Spectra Emission 1.0 0.9 Orange 0.8 Relative Intensity 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 500 Green Amber Red Super Red Hyper Red 550 600 650 700 750 800 Wavelength (nm) V.6 Page: 5 of 7 AMERICAN BRIGHT OPTOELECTRONICS CORP. Power DOMILED AlInGaP BL-PW Series Fig.6 Recommended IR-reflow Soldering Profile (acc. To IPC 9501). Fig.7 Recommended TTW Soldering Profile (acc. to CECC 00802). V.6 Page: 6 of 7 AMERICAN BRIGHT OPTOELECTRONICS CORP. Power DOMILED AlInGaP BL-PW Series • Taping And Orientation: Reels come in quantity of 2000 units. Reel diameter is 180 mm. V.6 Page: 7 of 7
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