BM-10EG57ND

BRIGHT LED ELECTRONICS CORP. SINCE 1981 BM-10EG57ND ● 1. 2. 3. 4. 5. 6. Features : 1.539 inch (39.10mm) matrix height. Dot size 3.0mm. Low power requirement. Excellent characters appearance. Multi state reliability. Multiplex drive , column cathode com. and row anode com. ● Package Dimensions : 7. 8. 9. Multi color available. Categorized for luminous intensity. Stackable vertically and horizontally. ● 1. 2. Description : The BM-10EG57ND is a39.10mm(1.539") matrix height 5×7 dot matrix display. This product use hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate. Notes: 1. All dimensions are in millimeters(inches). 2. Tolerance is ±0.25mm(.01")unless otherwise specified. 3. Specifications are subject to change without notice. 3. 4. This product have a black face and white dots. This product doesn't contain restriction substance, comply ROHS standard. ● Internal Circuit Diagram : 佰鴻工業股份有限公司 http://www.brtled.com Ver.1.0 Page 1 of 3 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BM-10EG57ND ● Absolute Maximum Ratings(Ta=25℃) Parameter Power Dissipation Per Dot Forward Current Per Dot Peak Forward Current Per Dot Reverse Voltage Per Dot Operating Temperature Storage Temperature Soldering Temperature (1/16" From Body) Symbol Pd IF IFP (Duty 1/10, 1KHZ) VR Topr Tstg Tsol Hi-Eff Red 80 30 150 5 Green 80 30 150 Unit mW mA mA V - -40℃~80℃ -40℃~85℃ 260℃ For 5 Seconds ● Electrical And Optical Characteristics(Ta=25℃) Hi-Eff Red Parameter Forward Voltage Per Dot Luminous Intensity Per Dot Reverse Current Per Dot Peak Wave Length Dominant Wave Length Spectral Line Half-width Symbol Condition VF Iv IR λp λd ∆λ IF=10mA IF=10mA VR=5V IF=10mA IF=10mA IF=10mA Min. 626 - Typ. 1.9 8.0 640 40 Max. 2.5 100 636 - Unit V mcd µA nm nm nm Green Parameter Forward Voltage Per Dot Luminous Intensity Per Dot Reverse Current Per Dot Peak Wave Length Symbol Condition VF Iv IR IF=10mA IF=10mA VR=5V Min. - Typ. 2.1 8.0 - Max. 2.5 - Unit V mcd µA nm nm nm Dominant Wave Length Spectral Line Half-width 佰鴻工業股份有限公司 http://www.brtled.com λp IF=10mA 568 λd IF=10mA 569 ∆λ IF=10mA 30 - 100 574 Ver.1.0 Page 2 of 3 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BM-10EG57ND ● Typical Electro-Optical Characteristics Curves (25℃ Ambient Temperature Unless Otherwise Noted) 1.0 Fig.1 Relative Radiant Intensity VS. Wavelength (G) (E) Relative Radiant Intensity 0.5 0 530 560 590 Wavelength(nm) 620 650 680 710 (E) (G) Relative Luminous Intensity (@20mA) 3 4 5 50 Fig.2 Forward Current VS. Forward Voltage 3.0 2.5 2.0 1.5 1.0 0.5 Fig.3 Relative Luminous Intensity VS. Ambient Temperature Forward Current (mA) 40 30 20 10 0 1 2 Forward Voltage (V) Fig.4 Relative Luminous Intensity VS. Forward Current 0 -40 Ambient Temperature Ta( C) Fig.5 Forward Current Derating Curve VS. Ambient Temperature -20 0 20 40 60 Relative Luminous Intensity (@20mA) 3.0 2.0 (G) (E) Forward Current(mA) 1.0 佰鴻工業股份有限公司 http://www.brtled.com 40 30 20 10 0 0 10 20 30 40 50 50 0.0 Forward Current(mA) Ambient Temperature Ta( C) 20 40 60 80 100 120 Ver.1.0 Page 3 of 3