BPT-NP03C1

BRIGHT LED ELECTRONICS CORP. SINCE 1981 DATA SHEET ● SHEET DATE 2002.04.01 2003.04.04 2004.08.06 2004.10.20 DEVICE NUMBER：BPT-NP03C1 3 4 CONTENTS Initial Released Date﹑Tosl﹑Dimensions Formats Of Sheets 1 2 1.0 1.0 1.0 1.0 1.1 1.1 1.1 1.0 2.0 2.0 2.0 2.1 2.0 2.0 Features 佰鴻工業股份有限公司 BRIGHT LED ELECTRONICS CORP. 台北縣板橋市和平路 19 號 3 樓 3F., No. 19, Ho Ping Road, Pan Chiao City, Taipei, Taiwan, R. O. C. Tel: 886-2-29591090 Fax: 886-2-29547006/29558809 www.brtled.com. APPROVED DRAWER 賈遠慶 肖美艷 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPT-NP03C1 SIDE- LOOK PACKAGE PHOTOTRANSISTOR ● Features 1. 2. 3. Wide range of collector current. High sensitivity. Low cost plastic package. 1.2(.047) 0.1 5.7(.224) R0.76(.030) 1.52(.060) 4.4(.173)±0.1 1.5(.059) ● Package Dimensions: 4. Lens Appearance: Water Clear. 5. This product doesn't contain restriction substance, comply ROHS standard 16.5(0.650) 0.40(.160) ● Description The BPT-NP03C1 is a NPN silicon phototransistor mounted in a lensed ,water clear plastic package . The lensing effect of the package allows an acceptance half view angle of 50∘that is measured from the optical axis to the half power point . 1 1.0(.04)MIN. 2 0.40(.160) 2.54(.10) NOM. 1.Emitter 2.Collector NOTES: 1.All dimensions are in millimeters (inches). 2.Tolerance is ±0.25mm (0.01’) unless otherwise specified. 3.Lead spacing is measured where the leads emerge from the package 4.Specifications are subject to change without notice ● Absolute Maximum Ratings(Ta=25℃) Parameter Power Dissipation Collector- Emitter Voltage Emitter- Collector Voltage Operating Temperature Storage Temperature Range Lead Soldering Temperature Maximum Rating 100 30 5 -45℃~+85℃ -45℃~+100℃ Unit mW V V 260℃ for 5 seconds Rev:2.1 Page1 of 3 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPT-NP03C1 ● Electrical Characteristics (TA=25℃ unless otherwise noted) PARAMETER Collector- Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector- Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current Light Current SYMBOL V(BR)CEO V(BR)ECO VCE(SAT) Tr Tf Id IC (ON) MIN 30 5 TYP 10 15 3.5 MAX 0.5 100 UNITS V V V μS nA mA TEST CONDITIONS IC=0.1 mA Ee=0mW/cm2 IR=0.1mA Ee=0 mW/cm2 IC=0.1mA Ee=1.0mW/cm2 VCE =5V RL=1KΩ F=100HZ VCE=10V Ee=0 mW/cm2 VCE=5V Ee=1.0mW/cm2 ● Typical Optical-Electrical Characteristic Curves (uA) 10000 1000 FIG.1 Dark Current Vs. Ambient Temperature (mW) 120 100 Power Dissipation Pd 80 60 40 20 0 FIG.2 Power Dissipation Vs. Ambient Temperature 100 Dark Current 10 1 0.1 0.01 0 20 60 80 100 40 Ambient Temperature 120 (°C) -25 0 25 50 75 100 Ambient Temperature 125 (°C) (us) FIG.3 Rise And Fall Time Vs. Load Resistance 20 16 Vcc=5V FIG.4 Relative Collector Current Vs. Irradiance 2.5 Relative Collector Current Vce=5V F=100Hz Tf Tr 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 2 3.0 (mW/cm ) Rise and Fall Time 12 8 4 0 0 0.2 0.4 0.6 0.8 1.0 (K ) Irradiance Load Resistance Rev:2.1 Page2 of 3 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPT-NP03C1 ● Tapping and packaging specifications(Units: mm) ● Packaging Bag Dimensions Notes: 1、1000pcs per bag, 8Kpcs per box. 2、All dimensions are in millimeters(inches). 3、Specifications are subject to change without notice. Rev:2.1 Page3 of 3 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPT-NP03C1 Phototransistor Specification Commodity: Phototransistor Collector Current Bin Limits (At 1mW/ cm2) BIN CODE P0 P1 P2 P3 P4 P5 Min.(mA) 1.440 2.552 3.192 3.640 4.280 5.632 Max.(mA) 3.828 4.788 5.460 6.420 6.852 8.808