BH616UV1611BI55

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit Pb-Free and Green package materials are compliant to RoHS BH616UV1611 n FEATURES Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 10mA (Max.) at 55ns 2mA (Max.) at 1MHz Standby current : 5.0uA (Typ.) at 3.0V/25OC VCC = 1.2V Data retention current : 1.5uA(Typ.) at 25OC Ÿ High speed access time : -55 55ns (Max.) at VCC=1.65~3.6V -70 70ns (Max.) at VCC=1.65~3.6V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three state outputs and TTL compatible Ÿ Fully static operation, no clock, no refresh Ÿ Data retention supply voltage as low as 1.0V n DESCRIPTION The BH616UV1611 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 by 16 bits and operates in a wide range of 1.65V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical operating current of 1.5mA at 1MHz at 3.0V/25OC and maximum access time of 55ns at 1.65V/85OC. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers. The BH616UV1611 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BH616UV1611 is available in DICE form, JEDEC standard 48-pin TSOP-I and 48-ball BGA package. n POWER CONSUMPTION POWER DISSIPATION PRODUCT FAMILY BH616UV1611DI BH616UV1611BI BH616UV1611TI Industrial -40OC to +85OC 30uA 25uA 2mA 6mA 10mA 1.5mA 5mA 8mA OPERATING TEMPERATURE STANDBY (ICCSB1, Max) Operating (ICC, Max) PKG TYPE VCC=1.8V 10MHz fMax. VCC=3.6V VCC=1.8V 1MHz VCC=3.6V 10MHz fMax. 1MHz DICE BGA-48-0810 TSOP I-48 n PIN CONFIGURATIONS A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE CE2 NC UB LB A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 1 A B C D E F G H LB DQ8 DQ9 VSS VCC DQ14 DQ15 A18 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 5 A2 CE1 DQ1 DQ3 DQ4 DQ5 WE A11 6 CE2 DQ0 DQ2 VCC VSS DQ6 DQ7 NC A16 BYTE VSS DQ15/A20 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE VSS CE1 A0 n BLOCK DIAGRAM A15 A14 A13 A12 A11 A10 A9 A8 A19 A18 Address Input Buffer 10 Row Decoder 1024 Memory Array 1024 x 16384 BH616UV1611TI 16384 DQ0 . . . . . . DQ15 . . . . . . 16 Data Input Buffer Data Output Buffer 16 1024 Column Decoder 10 Control Address Input Buffer 16 Column I/O Write Driver Sense Amp 16 2 OE UB DQ10 DQ11 DQ12 DQ13 A19 A8 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 CE2, CE1 WE OE UB LB VCC VSS A16 A0 A17 A7 A6 A5 A4 A3 A2 A1 48-ball BGA top view Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice. Detailed product characteristic test report is available upon request and being accepted. R0201-BH616UV1611 1 Revision 1.3 Otc. 2006 BH616UV1611 n PIN DESCRIPTIONS Name Function A0 to A19 Address Input (word mode) These 20 address inputs select one of the 1,024K x 16 bit in the RAM, if BYTE is HIGH A0 to A20 Address Input (byte mode) These 21 address inputs select one of the 2,048K x 8 bit in the RAM, If BYTE is LOW (TSOP only) CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when CE1 Chip Enable 1 Input data read from or write to the device. If either chip enable is not active, the device is CE2 Chip Enable 2 Input deselected and is in standby power mode. The DQ pins will be in the high impedance state when the device is deselected. WE Write Enable Input The write enable input is active LOW and controls read and write operations. With the chip selected, when WE is HIGH and OE is LOW, output data will be present on the DQ pins; when WE is LOW, the data present on the DQ pins will be written into the selected memory location. The output enable input is active LOW. If the output enable is active while the chip is selected and the write enable is inactive, data will be present on the DQ pins and they will be enabled. The DQ pins will be in the high impendence state when OE is inactive. Lower byte and upper byte data input/output control pins. OE Output Enable Input LB and UB Data Byte Control Input BYTE Byte Enable Input (TSOP only) DQ0-DQ15 Data Input/Output Ports VCC VSS This input selects the organization of the SRAM. 1,024K x 16-bit configuration is selected if BYTE is HIGH. 2,048K x 8-bit configuration is selected if BYTE is LOW 16 bi-directional ports are used to read data from or write data into the RAM. Power Supply Ground R0201-BH616UV1611 2 Revision 1.3 Otc. 2006 BH616UV1611 n TRUTH TABLE Byte Mode (TSOP only) MODE Chip De-selected (Power Down) Output Disabled Read (byte mode) Write (byte mode) CE1 H X L L L CE2 X L H H H WE X X H H L OE X X H L X LB X X X X X UB X X X X X BYTE DQ0~DQ7 DQ8~DQ14 DQ15 L L L L L High Z High Z High Z DOUT DIN High Z High Z High Z High Z X High Z High Z High Z A20 A20 VCC CURRENT ICCSB, ICCSB1 ICCSB, ICCSB1 ICC ICC ICC Word Mode MODE Chip De-selected (Power Down) Output Disabled Read (word mode) CE1 H X X L CE2 X L X H WE X X X H OE X X X H LB X X H X L UB X X H X L L H L L H BYTE DQ0~DQ7 DQ8~DQ14 DQ15 H H H H H H H H H H High Z High Z High Z High Z DOUT High Z DOUT DIN X DIN High Z High Z High Z High Z DOUT DOUT High Z DIN DIN X High Z High Z High Z High Z DOUT DOUT High Z DIN DIN X VCC CURRENT ICCSB, ICCSB1 ICCSB, ICCSB1 ICCSB, ICCSB1 ICC ICC ICC ICC ICC ICC ICC L H H L H L L Write (word mode) L H L X H L NOTES: H means VIH; L means VIL; X means don’t care (Must be VIH or VIL state) 48BGA ignore BYTE condition. R0201-BH616UV1611 3 Revision 1.3 Otc. 2006 BH616UV1611 n ABSOLUTE MAXIMUM RATINGS SYMBOL VTERM TBIAS TSTG PT IOUT (1) n OPERATING RANGE UNITS V O PARAMETER Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation DC Output Current RATING -0.5(2) to 4.6V -40 to +125 -60 to +150 1.0 20 RANG Industrial AMBIENT TEMPERATURE -40OC to + 85OC VCC 1.65V ~ 3.6V C C O n CAPACITANCE (1) (TA = 25 C, f = 1.0MHz) O W SYMBOL PAMAMETER CONDITIONS MAX. UNITS mA CIN 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. –2.0V in case of AC pulse width less than 30 ns CIO Input Capacitance Input/Output Capacitance VIN = 0V VI/O = 0V 6 8 pF pF 1. This parameter is guaranteed and not 100% tested. n DC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C) PARAMETER NAME VCC VIL VIH IIL PARAMETER Power Supply VCC=1.8V O O TEST CONDITIONS MIN. 1.65 -0.3(2) 1.4 2.2 -- TYP.(1) -- MAX. 3.6 0.4 0.8 UNITS V Input Low Voltage VCC=3.6V VCC=1.8V -- V Input High Voltage VCC=3.6V -- VCC+0.3(3) V Input Leakage Current VIN = 0V to VCC, CE1 = VIH or CE2 = VIL VI/O = 0V to V CC, CE1 = VIH or CE2 = VIL or OE = VIH or UB = LB = VIH V CC = Max, IOL = 0.2mA V CC = Max, IOL = 2.0mA VCC=1.8V -- 1 uA ILO Output Leakage Current -- -- 1 0.2 0.4 uA VOL VOH ICC ICC1 ICCSB ICCSB1 Output Low Voltage -VCC=3.6V VCC=1.8V VCC=3.6V VCC=1.8V -- V Output High Voltage Operating Power Supply Current Operating Power Supply Current Standby Current – TTL V CC = Min, IOH = -0.1mA V CC = Min, IOH = -1.0mA CE1 = VIL and CE2 = VIH, IDQ = 0mA, f = FMAX(4) VCC-0.2 2.4 -- -6 8 -8 10 1.5 2.0 0.5 1.0 V mA VCC=3.6V VCC=1.8V CE1 = VIL and CE2 = VIH, IDQ = 0mA, f = 1MHz CE1 = VIH, or CE2 = VIL, IDQ = 0mA -VCC=3.6V VCC=1.8V 1.0 1.5 mA -VCC=3.6V VCC=1.8V -4.0 5.0(5) mA Standby Current – CMOS CE1≧ VCC-0.2V or CE2≦ 0.2V, VIN≧ V CC-0.2V or VIN≦ 0.2V -VCC=3.6V 25 30 uA 1. Typical characteristics are at TA=25OC and not 100% tested. 2. Undershoot: -1.0V in case of pulse width less than 20 ns. 3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns. 4. FMAX=1/tRC. 5. VCC=3.0V R0201-BH616UV1611 4 Revision 1.3 Otc. 2006 BH616UV1611 n DATA RETENTION CHARACTERISTICS (TA = -40 C to +85 C) SYMBOL VDR ICCDR tCDR tR PARAMETER VCC for Data Retention O O TEST CONDITIONS CE1≧VCC-0.2V or CE2≦0.2V, VIN≧VCC-0.2V or VIN≦0.2V CE1≧VCC-0.2V or CE2≦0.2V, VIN≧VCC-0.2V or VIN≦0.2V VCC=1.2V MIN. 1.0 TYP. (1) -- MAX. -- UNITS V Data Retention Current Chip Deselect to Data Retention Time -- 1.5 15 uA 0 See Retention Waveform tRC (2) -- -- ns Operation Recovery Time -- -- ns 1. Typical characteristics are at TA=25OC and not 100% tested. 2. tRC = Read Cycle Time. n LOW VCC DATA RETENTION WAVEFORM (1) (CE1 Controlled) Data Retention Mode VCC VIH VCC VDR≧1.0V VCC tCDR CE1≧VCC - 0.2V tR VIH CE1 n LOW VCC DATA RETENTION WAVEFORM (2) (CE2 Controlled) Data Retention Mode VCC VDR≧1.0V VCC VCC tCDR tR CE2≦0.2V CE2 VIL VIL n AC TEST CONDITIONS (Test Load and Input/Output Reference) Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level tCLZ1, tCLZ2, tBE, tOLZ, tCHZ1, tCHZ2, tBDO, tOHZ, tWHZ, tOW Output Load Others VCC / 0V 1V/ns 0.5Vcc CL = 5pF+1TTL CL = 30pF+1TTL ALL INPUT PULSES 1 TTL Output CL(1) VCC GND 10% 90% 90% 10% n KEY TO SWITCHING WAVEFORMS WAVEFORM INPUTS MUST BE STEADY MAY CHANGE FROM “H” TO “L” MAY CHANGE FROM “L” TO “H” DON’T CARE ANY CHANGE PERMITTED DOES NOT APPLY OUTPUTS MUST BE STEADY WILL BE CHANGE FROM “H” TO “L” WILL BE CHANGE FROM “L” TO “H” CHANGE : STATE UNKNOW CENTER LINE IS HIGH INPEDANCE “OFF” STATE →← Rise Time: 1V/ns →← Fall Time: 1V/ns 1. Including jig and scope capacitance. R0201-BH616UV1611 5 Revision 1.3 Otc. 2006 BH616UV1611 n BYTE FUNCTION PARAMETER NAME tBS tBR BYTE Setup Time BYTE Recovery Time PARAMETER MIN. 5 5 MAX. --- UNITS ms ms CE2 CE1 tBS tBR BYTE n AC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C) READ CYCLE JEDEC PARANETER PARAMETER NAME NAME CYCLE TIME : 55ns DESCRIPTION Read Cycle Time Address Access Time Chip Select Access Time Chip Select Access Time Data Byte Control Access Time Output Enable to Output Valid Chip Select to Output Low Z Chip Select to Output Low Z Data Byte Control to Output Low Z Output Enable to Output Low Z Chip Deselect to Output High Z Chip Deselect to Output High Z (CE1) (CE2) (CE1) (CE2) (LB, UB) (CE1) (CE2) (LB, UB) MIN. 55 -----10 10 10 5 ----10 TYP. ---------------M AX. -55 55 55 55 25 ----25 25 25 25 -CYCLE TIME : 70ns MIN. 70 -----10 10 10 5 ----10 TYP. ---------------M AX. -70 70 70 70 35 ----35 35 35 30 -UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns O O tAVAX tAVQX tE1LQV tE2LQV tBLQV tGLQV tE1LQX tE2LQX tBLQX tGLQX tE1HQZ tE2HQZ tBHQZ tGHQZ tAVQX tRC tAA tACS1 tACS2 tBA tOE tCLZ1 tCLZ2 tBE tOLZ tCHZ1 tCHZ2 tBDO tOHZ tOH Data Byte Control to Output High Z (LB, UB) Output Disable to Output High Z Data Hold from Address Change R0201-BH616UV1611 6 Revision 1.3 Otc. 2006 BH616UV1611 n SWITCHING WAVEFORMS (READ CYCLE) READ CYCLE 1 (1,2,4) tRC ADDRESS tOH DOUT (1,3,4) tAA tOH READ CYCLE 2 CE1 tACS1 CE2 tCLZ DOUT (6) tACS2 (5,6) tCHZ (5, 6) READ CYCLE 3 (1, 4) tRC ADDRESS tAA OE tOE CE1 tCLZ1 CE2 tCLZ2 LB, UB (5) (5) tOH tOLZ tACS1 tOHZ tCHZ (5) (1,5) tACS2 tCHZ2 tBA tBE tBDO (2,5) DOUT NOTES: 1. WE is high in read Cycle. 2. Device is continuously selected when CE1 = VIL and CE2= VIH. 3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high. 4. OE = VIL. 5. Transition is measured ± 500mV from steady state with CL = 5pF. The parameter is guaranteed but not 100% tested. R0201-BH616UV1611 7 Revision 1.3 Otc. 2006 BH616UV1611 n AC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C) WRITE CYCLE JEDEC PARANETER PARAMETER NAME NAME DESCRIPTION Write Cycle Time Address Set up Time Address Valid to End of Write Chip Select to End of Write Data Byte Control to End of Write Write Pulse Width Write Recovery Time Write Recovery Time Write to Output High Z Data to Write Time Overlap Data Hold from Write Time Output Disable to Output in High Z End of Write to Output Active (CE1, WE) (CE2) (LB, UB) CYCLE TIME : 55ns MIN. 55 0 40 40 40 30 0 0 -25 0 -5 TYP. -------------M AX. --------20 --25 -CYCLE TIME : 70ns MIN. 70 0 60 60 60 35 0 0 -30 0 -5 TYP. -------------M AX. --------30 --30 -ns ns ns ns ns ns ns ns ns ns ns ns ns UNITS O O tAVAX tAVWL tAVWH tELWH tBLWH tWLWH tWHAX tE2LAX tWLQZ tDVWH tWHDX tGHQZ tWHQX tWC tAS tAW tCW tBW tWP tWR1 tWR2 tWHZ tDW tDH tOHZ tOW n SWITCHING WAVEFORMS (WRITE CYCLE) WRITE CYCLE 1 (1) tWC ADDRESS OE tCW CE1 (5) (11) tWR1 (3) CE2 (5) tCW LB, UB tAW WE tAS tOHZ DOUT (4,10) (11) tBW tWR2 (3) tWP (2) tDH tDW DIN R0201-BH616UV1611 8 Revision 1.3 Otc. 2006 BH616UV1611 WRITE CYCLE 2 ADDRESS tCW (11) (1,6) tWC CE1 (5) CE2 (5) tCW LB, UB (12) (11) tBW tAW tWR (3) WE tAS tWHZ DOUT (4,10) tWP (2) tOW tDW tDH (8,9) (7) (8) DIN NOTES: 1. WE must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and WE low. All signals must be active to initiate a write and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second transition edge of the signal that terminates the write. 3. tWR is measured from the earlier of CE1 or WE going high or CE2 going low at the end of write cycle. 4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. 5. If the CE1 low transition or the CE2 high transition occurs simultaneously with the WE low transitions or after the WE transition, output remain in a high impedance state. 6. OE is continuously low (OE = VIL). 7. DOUT is the same phase of write data of this write cycle. 8. DOUT is the read data of next address. 9. If CE1 is low and CE2 is high during this period, DQ pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 10. Transition is measured ± 500mV from steady state with CL = 5pF. The parameter is guaranteed but not 100% tested. 11. tCW is measured from the later of CE1 going low or CE2 going high to the end of write. R0201-BH616UV1611 9 Revision 1.3 Otc. 2006 BH616UV1611 n ORDERING INFORMATION BH616UV1611 X X Z YY SPEED 55: 55ns 70: 70ns PKG MATERIAL -: Normal G: Green, RoHS Compliant P: Pb free, RoHS Compliant GRADE I: -40oC ~ +85oC PACKAGE D: Dice B: BGA-48-0810 T: TSOP I-48 Note: Brilliance Semiconductor Inc. (BSI) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support systems and critical medical instruments. n PACKAGE DIMENSIONS 0.25 ± 0.05 NOTES: 1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS. 2: PIN#1 DOT MARKING BY LASER OR PAD PRINT. 3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS. 1.2 Max. SIDE VIEW D 0.1 D1 N 48 D 10.0 E 8.0 D1 5.25 E1 3.75 e 0.75 SOLDER BALL 0.35 ± 0.05 e VIEW A 48 mini-BGA (8 x 10mm) E ± 0.1 E1 R0201-BH616UV1611 10 Revision 1.3 Otc. 2006 BH616UV1611 n PACKAGE DIMENSIONS TSOP I-48 Pin (12mm x 20mm) R0201-BH616UV1611 11 Revision 1.3 Otc. 2006 BH616UV1611 n Revision History Revision No. 1.0 1.1 History Initial Production Version Change I-grade operation temperature range - from –25OC to –40OC Add Part Number for 70ns Add DICE form and 48 TSOP-I package type Change BGA package dimension for single chip solution - form 6x8 mm to 8x10mm Improve Spec. - ICC(MAX.) from 12mA to 10mA for VCC=3.6V - ICCsb1(TYP.) from 5.0uA to 4.0uA for VCC=1.8V - ICCDR(TYP.) from 2.5uA to 1.5uA for VCC=1.2V - tOE(MIN.) from 30ns to 25ns - tAW(MIN.) from 45ns to 40ns - tCW(MIN.) from 45ns to 40ns - tBW(MIN.) from 45ns to 40ns Draft Date May 10,2006 May 25, 2006 Remark Initial 1.2 1.3 July 21, 2006 Otc 22, 2006 R0201-BH616UV1611 12 Revision 1.3 Otc. 2006