BS616UV2021DC

BSI FEATURES Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable DESCRIPTION BS616UV2021 • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.08uA (Typ.) CMOS standby current Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 2.0V -10 100ns (Max.) at Vcc = 2.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1, CE2 and OE options • I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616UV2021 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.08uA and maximum access time of 70/100ns in 2.0V operation. Easy memory expansion is provided by active HIGH chip enable2(CE2), active LOW chip enable1(CE1), active LOW output enable(OE) and three-state output drivers. The BS616UV2021 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616UV2021 is available in DICE form and 48-pin BGA type. PRODUCT FAMILY PRODUCT FAMILY BS616UV2021DC BS616UV2021AC BS616UV2021DI BS616UV2021AI OPERATING TEMPERATURE +0 O C to +70 O C -40 O C to +85 O C Vcc RANGE 1.8V ~ 3.6V 1.8V ~ 3.6V SPEED ( ns ) Vcc= 2.0V (ICCSB1, Max ) Vcc= 2.0V POWER DISSIPATION STANDBY Operating (ICC, Max ) Vcc= 3.0V Vcc= 2.0V Vcc= 3.0V PKG TYPE DICE BGA-48-0608 DICE BGA-48-0608 70 / 100 70 / 100 0.5uA 1uA 0.7uA 1.5uA 15mA 20mA 20mA 25mA PIN CONFIGURATION BLOCK DIAGRAM A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 2048 D0 16(8) Data Input Buffer 16(8) Column I/O Address Input Buffer 20 Row Decoder 1024 Memory Array 1024 x 2048 . . . . D15 CE1 CE2 WE OE UB LB CIO Vdd Vss . . . . Write Driver 16(8) Sense Amp 128(256) Column Decoder 16(8) Data Output Buffer 14(16) Control Address Input Buffer A16 A0 A1 A2 A3 A4 A5 (SAE) Brilliance Semiconductor Inc. reserves the right to modify document contents without notice. R0201-BS616UV2021 1 Revision 2.4 April 2002 BSI PIN DESCRIPTIONS BS616UV2021 Name A0-A16 Address Input SAE Address Input CIO x8/x16 select input Function These 17 address inputs select one of the 131,072 x 16-bit words in the RAM. This address input incorporates with the above 17 address input select one of the 262,144 x 8-bit bytes in the RAM if the CIO is LOW. Don't use when CIO is HIGH. This input selects the organization of the SRAM. 131,072 x 16-bit words configuration is selected if CIO is HIGH. 262,144 x 8-bit bytes configuration is selected if CIO is LOW. CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active to read from or write to the device. If either chip enable is not active, the device is deselected and is in a standby power mode. The DQ pins will be in the high impedance state when the device is deselected. WE Write Enable Input The write enable input is active LOW and controls read and write operations. With the chip selected, when WE is HIGH and OE is LOW, output data will be present on the DQ pins; when WE is LOW, the data present on the DQ pins will be written into the selected memory location. OE Output Enable Input The output enable input is active LOW. If the output enable is active while the chip is selected and the write enable is inactive, data will be present on the DQ pins and they will be enabled. The DQ pins will be in the high impedance state when OE is inactive. LB and UB Data Byte Control Input D0 - D15 Data Input/Output Ports Vcc Gnd Lower byte and upper byte data input/output control pins. The chip is deselected when both LB and UB pins are HIGH. These 16 bi-directional ports are used to read data from or write data into the RAM. Power Supply Ground R0201-BS616UV2021 2 Revision 2.4 April 2002 BSI TRUTH TABLE MODE CE1 H Fully Standby X Output Disable L L H H H X CE2 X X X X X X L Read from SRAM ( WORD mode ) L H L H H H L L Write to SRAM ( WORD mode ) L H X L H H L Read from SRAM ( BYTE Mode ) Write to SRAM ( BYTE Mode ) L H L H L X X X H L L H L L X A-1 X X X OE WE CIO LB X UB X X SAE BS616UV2021 D0~7 D8~15 VCC Current High-Z High-Z ICCSB, ICCSB1 High-Z Dout High-Z Dout Din X Din Dout High-Z High-Z Dout Dout X Din Din High-Z ICC ICC ICC ICC L H X L L X X A-1 Din X ICC ABSOLUTE MAXIMUM RATINGS(1) SYMBOL VTERM TBIAS TSTG PT IOUT PARAMETER Terminal Voltage Respect to GND with OPERATING RANGE UNITS V O RATING -0.5 to Vcc+0.5 -40 to +125 -60 to +150 1.0 20 RANGE Commercial Industrial AMBIENT TEMPERATURE 0 O C to +70 O C -40 O C to +85 O C Vcc 1.8V 1.8V ~ ~ 3.6V 3.6V Temperature Under Bias Storage Temperature Power Dissipation DC Output Current C C O W mA CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz) SYMBOL 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CIN CDQ PARAMETER Input Capacitance Input/Output Capacitance CONDITIONS MAX. UNIT VIN=0V VI/O=0V 6 8 pF pF 1. This parameter is guaranteed and not tested. R0201-BS616UV2021 3 Revision 2.4 April 2002 BSI DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC) PARAMETER NAME V IL V IH I IL I OL V OL V OH I CC BS616UV2021 PARAMETER Guaranteed Input Low Voltage(2) Guaranteed Input High Voltage(2) Input Leakage Current Output Leakage Current Output Low Voltage Output High Voltage Operating Power Supply Current Standby Current-TTL TEST CONDITIONS Vcc=2V Vcc=3V Vcc=2V Vcc=3V MIN. TYP.(1) MAX. -0.5 1.4 2.0 ---1.6 2.4 ----------------0.08 0.1 0.6 0.8 Vcc+0.2 UNITS V V uA uA V V mA Vcc = Max, VIN = 0V to Vcc Vcc = Max, CE1 = V IH or CE2=VIL or OE = VIH, 1 1 0.4 -15 20 0.5 1 0.5 V I/O= 0V to Vcc Vcc = Max, I OL = 2mA Vcc = Min, IOH = -1mA Vcc = Max, CE1= V IL, CE2=V IH I DQ = 0mA, F = Fmax(3) Vcc = Max, CE1 = VIH or CE2=VIL IDQ = 0mA Vcc = Max, CE1 Vcc-0.2V or CE2 0.2V, Other inputs Vcc - 0.2V or VIN 0.2V Vcc=2V Vcc=3V Vcc=2V Vcc=3V Vcc=2V Vcc=3V Vcc=2V Vcc=3V Vcc=2V Vcc=3V I CCSB mA I CCSB1 Standby Current-CMOS uA 0.7 1. Typical characteristics are at TA = 25oC. 2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included. 3. Fmax = 1/tRC . R0201-BS616UV2021 4 Revision 2.4 April 2002 BSI DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC ) SYMBOL VDR BS616UV2021 TEST CONDITIONS CE1 VIN CE1 VIN Vcc - 0.2V or CE2 0.2V or Vcc - 0.2V or VIN 0.2V Vcc - 0.2V or CE2 0.2V Vcc - 0.2V or VIN 0.2V PARAMETER Vcc for Data Retention MIN. TYP. 1.5 -- (1) MAX. -- UNITS V ICCDR Data Retention Current Chip Deselect to Data Retention Time -- 0.05 0.5 uA tCDR tR 0 See Retention Waveform TRC (2) --- --- ns ns Operation Recovery Time 1. Vcc = 1.5V, TA = + 25OC 2. tRC = Read Cycle Time LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled ) Data Retention Mode Vcc VIH Vcc VDR 1.5V Vcc t CDR CE1 Vcc - 0.2V tR VIH CE1 LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled ) Data Retention Mode Vcc Vcc VDR 1.5V Vcc t CDR tR CE2 0.2V CE2 VIL VIL R0201-BS616UV2021 5 Revision 2.4 April 2002 BSI AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Vcc/0V 5ns 0.5Vcc WAVEFORM BS616UV2021 KEY TO SWITCHING WAVEFORMS INPUTS MUST BE STEADY MAY CHANGE FROM H TO L 1333 Ω OUTPUTS MUST BE STEADY WILL BE CHANGE FROM H TO L WILL BE CHANGE FROM L TO H CHANGE : STATE UNKNOWN CENTER LINE IS HIGH IMPEDANCE ”OFF ”STATE AC TEST LOADS AND WAVEFORMS 2V OUTPUT 100PF INCLUDING JIG AND SCOPE 1333 Ω 2V OUTPUT MAY CHANGE FROM L TO H DON T CARE: ANY CHANGE PERMITTED DOES NOT APPLY , 5PF 2000 Ω INCLUDING JIG AND SCOPE 2000 Ω FIGURE 1A THEVENIN EQUIVALENT 800 Ω FIGURE 1B OUTPUT 1.2V ALL INPUT PULSES Vcc GND 10% 90% 90% 10% → ← → ← 5ns FIGURE 2 AC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC, Vcc =2.0V ) READ CYCLE JEDEC PARAMETER NAME PARAMETER NAME DESCRIPTION Read Cycle Time Address Access Time Chip Select Access Time Chip Select Access Time Data Byte Control Access Time Output Enable to Output Valid Chip Select to Output Low Z Data Byte Control to Output Low Z Output Enable to Output in Low Z Chip Deselect to Output in High Z Data Byte Control to Output High Z Output Disable to Output in High Z Output Disable to Address Change BS616UV2021-70 MIN. TYP. MAX. BS616UV2021-10 MIN. TYP. MAX. UNIT ns ns ns ns ns ns ns ns ns ns ns ns ns tAVAX tAVQV t E1LQV t E2LQV tBA tGLQV tELQX tBE tGLQX tEHQZ tBDO tGHQZ tAXOX tRC tAA t ACS1 t ACS2 tBA(1) tOE tCLZ tBE tOLZ tCHZ tBDO tOHZ tOH 70 -(CE1) (CE2) (LB,UB) ----(CE1,CE2) (LB,UB) 10 10 10 (CE1,CE2) (LB, UB) 0 0 0 10 -------------- -70 70 70 35 35 ---35 35 30 -- 100 -----15 15 15 0 0 0 15 -------------- -100 100 100 50 50 ---40 40 35 -- NOTE : 1. tBA is 35ns/50ns (@speed=70ns/100ns) with address toggle . tBA is 70ns/100ns (@speed=70ns/100ns) without address toggle . R0201-BS616UV2021 6 Revision 2.4 April 2002 BSI SWITCHING WAVEFORMS (READ CYCLE) READ CYCLE1 (1,2,4) ADDRESS BS616UV2021 t RC t OH AA t D OUT t OH READ CYCLE2 (1,3,4) CE2 t t ACS2 ACS1 CE1 t D OUT (5) CLZ t CHZ (5) READ CYCLE3 (1,4) ADDRESS t RC t OE AA t CE2 OE t OH t t t t (5) CLZ ACS2 CE1 OLZ ACS1 t t OHZ CHZ (5) (1,5) LB,UB t BE t t BA BDO D OUT NOTES: 1. WE is high in read Cycle. 2. Device is continuously selected when CE1 = VIL and CE2 = VIH. 3. Address valid prior to or coincident with CE1 transition low and CE2 transition high. 4. OE = VIL . 5. Transition is measured ± 500mV from steady state with CL = 30pF as shown in Figure 1B. The parameter is guaranteed but not 100% tested. R0201-BS616UV2021 7 Revision 2.4 April 2002 BSI AC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC, Vcc =2.0V ) WRITE CYCLE JEDEC PARAMETER NAME PARAMETER NAME DESCRIPTION Write Cycle Time Chip Select to End of Write Address Setup Time Address Valid to End of Write Write Pulse Width Write recovery Time (CE2,CE1,WE) BS616UV2021-70 MIN. TYP. MAX. BS616UV2021 BS616UV2021-10 MIN. TYP. MAX. UNIT ns ns ns ns ns ns ns ns ns ns ns ns tAVAX t E1LWH tAVWL tAVWH tWLWH tWHAX tBW tWLQZ tDVWH tWHDX tGHQZ tWHOX tWC tCW t AS t AW tWP tWR tBW(1) tWHZ tDW tDH tOHZ tOW 70 70 0 70 35 0 30 0 30 0 0 5 (LB,UB) ------------- -------30 --30 -- 100 100 0 100 50 0 40 0 40 0 0 10 ------------- -------40 --40 -- Date Byte Control to End of Write Write to Output in High Z Data to Write Time Overlap Data Hold from Write Time Output Disable to Output in High Z End of Write to Output Active NOTE : 1. tBW is 30ns/40ns (@speed=70ns/100ns) with address toggle. ; tBW is 70ns/100ns (@speed=70ns/100ns) without address toggle . SWITCHING WAVEFORMS (WRITE CYCLE) WRITE CYCLE1 (1) ADDRESS t WC t OE (3) WR CE2 (5) t CW CE1 (5) (11) t LB,UB (5) BW t WE AW (3) t AS (4,10) t WP (2) t OHZ D OUT t t DW DH D IN R0201-BS616UV2021 8 Revision 2.4 April 2002 BSI WRITE CYCLE2 (1,6) BS616UV2021 t WC ADDRESS CE2 (11) CE1 (5) t t CW BW LB,UB (5) t WE AW t WP t WR (3) (2) t AS (4,10) t DH (7) (8) t WHZ D OUT t DW t DH (8,9) D IN NOTES: 1. WE must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE2, CE1 and WE low. All signals must be active to initiate a write and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second transition edge of the signal that terminates the write. 3. TWR is measured from the earlier of CE2 going low, or CE1 or WE going high at the end of write cycle. 4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. 5. If the CE2 high transition or CE1 low transition or LB,UB low transition occurs simultaneously with the WE low transitions or after the WE transition, output remain in a high impedance state. 6. OE is continuously low (OE = VIL ). 7. DOUT is the same phase of write data of this write cycle. 8. DOUT is the read data of next address. 9. If CE2 is high or CE1 is low during this period, DQ pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 10. Transition is measured ± 500mV from steady state with CL = 30pF as shown in Figure 1B. The parameter is guaranteed but not 100% tested. 11. TCW is measured from the later of CE2 going high or CE1 going low to the end of write. R0201-BS616UV2021 9 Revision 2.4 April 2002 BSI ORDERING INFORMATION BS616UV2021 BS616UV2021 XX -- Y Y SPEED 70: 70ns 10: 100ns GRADE C: +0oC ~ +70oC I: -40oC ~ +85oC PACKAGE A :BGA - 48 PIN(6x8mm) D :DICE PACKAGE DIMENSIONS NOTES: 1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS. 2: PIN#1 DOT MARKING BY LASER OR PAD PRINT. 3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS. 1.4 Max. BALL PITCH e = 0.75 D 8.0 E 6.0 N 48 D1 5.25 E1 3.75 D1 e VIEW A 48 mini-BGA (6 x 8mm) R0201-BS616UV2021 E1 10 Revision 2.4 April 2002 BSI REVISION HISTORY Revision 2.2 2.3 2.4 BS616UV2021 Description 2001 Data Sheet release Modify Standby Current (Typ. and Max.) Modify some AC parameters Date Apr. 15, 2001 Jun. 29, 2001 April,15,2002 Note R0201-BS616UV2021 11 Revision 2.4 April 2002