SN54AC00-SP
SCHS367C – OCTOBER 2008 – REVISED APRIL 2022
SN54AC00-SP Radiation Hardened Quad 2 Input NAND Gate
1 Features
3 Description
•
The SN54AC00 device contains four independent 2input NAND gates. Each gate performs the Boolean
function of Y = A • B or Y = A + B in positive logic.
•
•
•
•
5962R87549:
– Radiation hardness assurance (RHA) up to TID
100 krad (Si)
– SEL immune to 86 MeV×cm2/mg
5962-87549:
– Total ionizing dose 50 krad (Si)
2 V to 6 V VCC operation
Inputs accept voltages to 6 V
Maximum tpd of 7 ns at 5 V
Device Information(1)
PART NUMBER
SN54AC00-SP
2 Applications
(1)
•
•
•
.
Satellite payloads
Satellite power on reset logic
RHA known good Die (KGD) offering for space
hybrids
Pin Functions (Each Gate)
INPUTS
A
B
OUTPUT
Y
H
H
L
L
X
H
X
L
H
A
PACKAGE
BODY SIZE (NOM)
CDIP (14)
5.97 mm × 9.21 mm
CFP (14)
6.67 mm × 19.56 mm
KGD (0)
Not applicable
For all available packages, see the orderable addendum at
the end of the data sheet.
.
1A
1B
1Y
2A
2B
2Y
GND
1
14
2
13
3
12
4
11
5
10
6
9
7
8
VCC
4B
4A
4Y
3B
3A
3Y
Y
B
Logic Diagram (Positive Logic)
J or W Package
(Top View)
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SN54AC00-SP
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SCHS367C – OCTOBER 2008 – REVISED APRIL 2022
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Bare Die Information....................................................... 3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 Recommended Operating Conditions.........................4
6.3 Thermal Information....................................................5
6.4 Electrical Characteristics.............................................5
6.5 Switching Characteristics, VCC = 3.3 V....................... 6
6.6 Switching Characteristics, VCC = 5 V.......................... 6
6.7 Operating Characteristics........................................... 6
7 Parameter Measurement Information............................ 7
8 Device and Documentation Support..............................8
8.1 Receiving Notification of Documentation Updates......8
8.2 Support Resources..................................................... 8
8.3 Trademarks................................................................. 8
8.4 Electrostatic Discharge Caution..................................8
8.5 Glossary......................................................................8
9 Mechanical, Packaging, and Orderable Information.... 8
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (October 2015) to Revision C (April 2022)
Page
• Updated the numbering format for tables, figures, and cross-references throughout the document..................1
• Removed SEU from the Features section.......................................................................................................... 1
• Changed SEL immune to 86 MeV×cm2/mg........................................................................................................1
Changes from Revision A (December 2013) to Revision B (February 2015)
Page
• Added KGD package information ...................................................................................................................... 1
• Added Device and Documentation Support section and Mechanical, Packaging, and Orderable Information
section ............................................................................................................................................................... 1
• Added Bare Die Information, image, and Bond Pad Coordinates in Microns .................................................... 3
• Added parameter information for KGD to Section 6.5 and Section 6.6 ............................................................. 6
Changes from Revision * (October 2008) to Revision A (December 2013)
Page
• Changed Features bullets...................................................................................................................................1
• Deleted Ordering Information table.....................................................................................................................1
2
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SCHS367C – OCTOBER 2008 – REVISED APRIL 2022
5 Bare Die Information
DIE THICKNESS
BACKSIDE FINISH
BACKSIDE
POTENTIAL
BOND PAD
METALLIZATION COMPOSITION
BOND PAD THICKNESS
15 mils
Silicon with backgrind
Floating
TiW/AlCu2
15800 nm
Bond Pad Coordinates in Microns
DESCRIPTION
PAD NUMBER
X MIN
Y MIN
X MAX
Y MAX
1A
1
96.3
510.5
201.3
615.5
1B
2
95
94
200
199
1Y
3
508
94
613
199
2A
4
1149
94
1254
199
2B
5
1562
94
1667
199
2Y
6
1841.5
145.5
1946.5
250.5
GND
7
1841.5
445.5
1946.5
550.5
3Y
8
1841
783
1946
888
3A
9
1750.5
991
1855.5
1096
3B
10
1176.5
991
1281.5
1096
4Y
11
921
991
1026
1096
4A
12
736
991
841
1096
4B
13
95
991
200
1096
VCC
14
102.5
692
207.5
797
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
VCC
MIN
MAX
UNIT
Supply voltage
–0.5
7
V
voltage(2)
–0.5
VCC + 0.5
V
–0.5
VCC + 0.5
V
VI
Input
VO
Output voltage(2)
IIK
Input clamp current
VI < 0 or VI > VCC
±20
mA
IOK
Output clamp current
VO < 0 or VO > VCC
±20
mA
IO
Continuous output current
VO = 0 to VCC
Continuous current through VCC or GND
TJ
Junction temperature
Tstg
Storage temperature
(1)
(2)
–65
±50
mA
±200
mA
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
6.2 Recommended Operating Conditions
VCC
Supply voltage
VCC = 3 V
VIH
High-level input voltage
MIN
MAX
2
6
VCC = 4.5 V
3.15
VCC = 5.5 V
3.85
V
0.9
VCC = 4.5 V
1.35
VCC = 5.5 V
1.65
V
VI
Input voltage
0
VCC
V
VO
Output voltage
0
VCC
V
IOH
High-level output current
IOL
4
Low-level input voltage
V
2.1
VCC = 3 V
VIL
UNIT
Low-level output current
Δt/Δv
Input transition rise or fall rate
TA
Operating free-air temperature
VCC = 3 V
12
VCC = 4.5 V
24
VCC = 5.5 V
24
VCC = 3 V
12
VCC = 4.5 V
24
VCC = 5.5 V
24
8
–55
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125
mA
mA
ns/V
°C
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SCHS367C – OCTOBER 2008 – REVISED APRIL 2022
6.3 Thermal Information
SN54AC00-SP
THERMAL
METRIC(1) (2)
J
W
14 PINS
14 PINS
RθJA
Junction-to-ambient thermal resistance
83.1
125.4
RθJC(top)
Junction-to-case (top) thermal resistance
26.6
30.85
RθJB
Junction-to-board thermal resistance
47.9
43.4
ψJT
Junction-to-top characterization parameter
N/A
N/A
ψJB
Junction-to-board characterization parameter
N/A
N/A
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
(1)
(2)
UNIT
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
The package thermal impedance is calculated in accordance with JESD 51-7 and Mil Std 883 method 1012.1 (see www.JEDEC.org).
6.4 Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
IOH = –50 μA
VOH
IOH = –12 mA
IOH = –24 mA
IOH = –50
mA(1)
IOL = 50 μA
VOL
IOL = 12 mA
IOL = 24 mA
VCC
TA = 25°C
MIN
TYP
MAX
MIN
3V
2.9
2.9
4.5 V
4.4
4.4
5.5 V
5.4
5.4
3V
2.56
2.4
4.5 V
3.86
3.7
5.5 V
4.86
4.7
5.5 V
MAX
UNIT
V
3.85
3V
0.1
0.1
4.5 V
0.1
0.1
5.5 V
0.1
0.1
3V
0.36
0.5
4.5 V
0.36
0.5
5.5 V
0.36
V
0.5
IOL = 50 mA(1)
5.5 V
II
VI = VCC or GND
5.5 V
±0.1
±1
μA
ICC
VI = VCC or GND, IO = 0
5.5 V
4
40
μA
Ci
VI = VCC or GND
(1)
5V
1.65
2.6
pF
Not more than one output should be tested at a time, and the duration of the test should not exceed 2 ms.
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6.5 Switching Characteristics, VCC = 3.3 V
over recommended operating free-air temperature range, VCC = 3.3 V ±0.3 V (unless otherwise noted) (see Figure 7-1)
PARAMETER
tPLH
tPHL
tPLH (KGD only)(1)
tPHL (KGD
(1)
only)(1)
FROM
(INPUT)
TO
(OUTPUT)
A or B
Y
A or B
Y
TA = 25°C
MIN
MAX
9.5
1
11
5.5
8
1
9
1
7
9.5
1
11
1
5.5
9.5
1
11
MIN
TYP
MAX
2
7
1.5
UNIT
ns
ns
Specification limits for KGD are based on SMD 5962-8754903
6.6 Switching Characteristics, VCC = 5 V
over recommended operating free-air temperature range, VCC = 5 V ±0.5 V (unless otherwise noted) (see Figure 7-1)
PARAMETER
tPLH
tPHL
tPLH (KGD only)(1)
tPHL (KGD only)(1)
(1)
FROM
(INPUT)
TO
(OUTPUT)
A or B
Y
A or B
Y
TA = 25°C
MIN
TYP
MAX
MIN
MAX
1.5
6
8
1
8.5
1.5
4.5
6.5
1
7
1.5
6
8
1
8.5
1.5
4.5
8
1
8.5
UNIT
ns
ns
Specification limits for KGD are based on SMD 5962-8754903
6.7 Operating Characteristics
VCC = 5 V, TA = 25°C
PARAMETER
Cpd
6
Power dissipation capacitance
TEST CONDITIONS
CL = 50 pF, ƒ = 1 MHz
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TYP
40
UNIT
pF
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SCHS367C – OCTOBER 2008 – REVISED APRIL 2022
7 Parameter Measurement Information
TEST
S1
tPLH/tPHL
Open
VCC
Input
(see Note B)
50% VCC
50% VCC
0V
tPHL
tPLH
2 × VCC
From Output
Under Test
CL = 50 pF
(see Note A)
500 Ω
S1
Open
In-Phase
Output
50% VCC
tPLH
tPHL
500 Ω
Out-of-Phase
Output
LOAD CIRCUIT
VOH
50% VCC
VOL
50% VCC
VOH
50% VCC
VOL
VOLTAGE WAVEFORMS
NOTES: A. CL includes probe and jig capacitance.
B. All input pulses are supplied by generators having the following characteristics: PRR ≤ 1 MHz, ZO = 50 Ω, tr ≤ 2.5 ns, tf ≤ 2.5 ns.
C. The outputs are measured one at a time with one input transition per measurement.
Figure 7-1. Load Circuit and Voltage Waveforms
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SCHS367C – OCTOBER 2008 – REVISED APRIL 2022
8 Device and Documentation Support
8.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
8.2 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
8.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
8.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
8.5 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
9 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
8
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PACKAGE OPTION ADDENDUM
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5-Apr-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
(3)
Device Marking
(4/5)
(6)
5962-8754903VCA
ACTIVE
CDIP
J
14
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
5962-8754903VC
A
SNV54AC00J
5962-8754903VDA
ACTIVE
CFP
W
14
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
5962-8754903VD
A
SNV54AC00W
5962R8754903V9A
ACTIVE
XCEPT
KGD
0
95
RoHS & Green
Call TI
N / A for Pkg Type
-55 to 125
5962R8754903VCA
ACTIVE
CDIP
J
14
25
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
5962R8754903VC
A
SNVR54AC00J
5962R8754903VDA
ACTIVE
CFP
W
14
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
5962R8754903VD
A
SNVR54AC00W
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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