74CBTD3384CDGVRG4

     

  
   

    
  SCDS133A −SEPTEMBER 2003 − REVISED OCTOBER 2003 D Undershoot Protection for Off-Isolation on D Data I/Os Support 0 to 5-V Signaling Levels A and B Ports Up To −2 V Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift Bidirectional Data Flow, With Near-Zero Propagation Delay Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical) Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical) Data and Control Inputs Provide Undershoot Clamp Diodes VCC Operating Range From 4.5 V to 5.5 V (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V) Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs Ioff Supports Partial-Power-Down Mode Operation Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II ESD Performance Tested Per JESD 22 − 2000-V Human-Body Model (A114-B, Class II) − 1000-V Charged-Device Model (C101) Supports Both Digital and Analog Applications: Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating D D D D D D D D D D D DB, DBQ, DGV, DW, OR PW PACKAGE (TOP VIEW) 1OE 1B1 1A1 1A2 1B2 1B3 1A3 1A4 1B4 1B5 1A5 GND 1 24 2 23 3 22 4 21 5 20 6 19 7 18 8 17 9 16 10 15 11 14 12 13 VCC 2B5 2A5 2A4 2B4 2B3 2A3 2A2 2B2 2B1 2A1 2OE description/ordering information ORDERING INFORMATION SOIC − DW SSOP − DB −40°C to 85°C ORDERABLE PART NUMBER PACKAGE† TA SSOP (QSOP) − DBQ TSSOP − PW Tube SN74CBTD3384CDW Tape and reel SN74CBTD3384CDWR Tube SN74CBTD3384CDB Tape and reel SN74CBTD3384CDBR Tape and reel SN74CBTD3384CDBQR Tube SN74CBTD3384CPW Tape and reel SN74CBTD3384CPWR TOP-SIDE MARKING CBTD3384C CC384C CBTD3384C CC384C TVSOP − DGV Tape and reel SN74CBTD3384CDGVR CC384C † Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Copyright  2003, Texas Instruments Incorporated   !"#$%&" ' ()##*& %' "! +),-(%&" .%&*/ #".)(&' ("!"#$ &" '+*(!(%&"' +*# &0* &*#$' "! *1%' '&#)$*&' '&%.%#. 2%##%&3/ #".)(&" +#"(*''4 ."*' "& *(*''%#-3 (-).* &*'&4 "! %-- +%#%$*&*#'/ POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 
     

  
   

    
  SCDS133A −SEPTEMBER 2003 − REVISED OCTOBER 2003 description/ordering information (continued) The SN74CBTD3384C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3384C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The SN74CBTD3384C is organized as two 5-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 5-bit bus switches or as one 10-bit bus switch. When OE is low, the associated 5-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 5-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. FUNCTION TABLE (each 5-bit bus switch) INPUT OE INPUT/OUTPUT A FUNCTION L B A port = B port H Z Disconnect logic diagram (positive logic) 2 3 1A1 1B1 SW 10 11 1A5 1B5 SW 1 1OE 14 2A1 15 2B1 SW 22 2A5 23 SW 13 2OE 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 2B5 
     

  
   

    
  SCDS133A −SEPTEMBER 2003 − REVISED OCTOBER 2003 simplified schematic, each FET switch (SW) A B Undershoot Protection Circuit EN† † EN is the internal enable signal applied to the switch. absolute maximum ratings over operating free-air temperature range (unless otherwise noted)‡ Supply voltage range, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 7 V Control input voltage range, VIN (see Notes 1 and 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 7 V Switch I/O voltage range, VI/O (see Notes 1, 2, and 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 7 V Control input clamp current, IIK (VIN < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 mA I/O port clamp current, II/OK (VI/O < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 mA ON-state switch current, II/O (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±128 mA Continuous current through VCC or GND terminals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±100 mA Package thermal impedance, θJA (see Note 5): DB package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63°C/W DBQ package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61°C/W DGV package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86°C/W DW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46°C/W PW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88°C/W Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C ‡ Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltages are with respect to ground unless otherwise specified. 2. The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed. 3. VI and VO are used to denote specific conditions for VI/O. 4. II and IO are used to denote specific conditions for II/O. 5. The package thermal impedance is calculated in accordance with JESD 51-7. recommended operating conditions (see Notes 6 and 7) MIN MAX UNIT VCC VIH Supply voltage 4.5 5.5 V High-level control input voltage 2 5.5 V VIL VI/O Low-level control input voltage 0 0.8 V Data input/output voltage 0 5.5 V TA Operating free-air temperature −40 85 °C NOTES: 6. All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004. 7. In applications with fast edge rates, multiple outputs switching, and operating at high frequencies, the output may have little or no level-shifting effect. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 3 
     

  
   

    
  SCDS133A −SEPTEMBER 2003 − REVISED OCTOBER 2003 electrical characteristics over recommended operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS VIK Control inputs VCC = 4.5 V, VIKU Data inputs VCC = 5 V, VOH IIN Control inputs IIN = −18 mA 0 mA > II ≥ −50 mA, VIN = VCC or GND, MIN TYP† Switch OFF MAX UNIT −1.8 V −2 V ±1 µA ±10 µA See Figures 4 and 5 VCC = 5.5 V, IOZ‡ VCC = 5.5 V, Ioff VCC = 0, ICC VCC = 5.5 V, VIN = VCC or GND VO = 0 to 5.5 V, VI = 0, Switch OFF, VIN = VCC or GND VO = 0 to 5.5 V, II/O = 0, VIN = VCC or GND, VI = 0 10 µA Switch ON or OFF 1.5 mA VCC = 5.5 V, VIN = 3 V or 0 One input at 3.4 V, Other inputs at VCC or GND 2.5 mA Cio(OFF) VI/O = 3 V or 0, Switch OFF, Cio(ON) VI/O = 3 V or 0, Switch ON, ron¶ VCC = 4.5 V VI = 0 IO = 64 mA IO = 30 mA ∆ICC§ Cin Control inputs Control inputs 3.5 pF VIN = VCC or GND 5 pF VIN = VCC or GND 12.5 pF 3 6 3 6 Ω VI = 2.4 V, IO = −15 mA 8 20 VIN and IIN refer to control inputs. VI, VO, II, and IO refer to data pins. † All typical values are at VCC = 5 V (unless otherwise noted), TA = 25°C. ‡ For I/O ports, the parameter IOZ includes the input leakage current. § This is the increase in supply current for each input that is at the specified voltage level, rather than VCC or GND. ¶ Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is determined by the lower of the voltages of the two (A or B) terminals. switching characteristics over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3) PARAMETER tpd# ten FROM (INPUT) TO (OUTPUT) A or B B or A OE A or B VCC = 5 V ± 0.5 V MIN 1.5 UNIT MAX 0.15 ns 4.8 ns tdis A or B 1.5 4.8 ns OE # The propagation delay is the calculated RC time constant of the typical ON-state resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance). 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 
     

  
   

    
  SCDS133A −SEPTEMBER 2003 − REVISED OCTOBER 2003 undershoot characteristics (see Figures 1 and 2) PARAMETER TEST CONDITIONS VOUTU VCC = 5.5 V, Switch OFF, † All typical values are at VCC = 5 V (unless otherwise noted), TA = 25°C. VCC Input Generator Ax VS DUT TYP† 2 VOH−0.3 VIN = VCC or GND MAX UNIT V 11 V Input (Open Socket) 100 kΩ 50 Ω MIN Bx 100 kΩ 90 % 2 ns 10 % −2 V 20 ns Output (VOUTU) POST OFFICE BOX 655303 5.5 V 2 ns 10 % 10 pF Figure 1. Device Test Setup 90 % VOH VOH − 0.3 Figure 2. Transient Input Voltage (VI) and Output Voltage (VOUTU) Waveforms (Switch OFF) • DALLAS, TEXAS 75265 5 
     

  
   

    
  SCDS133A −SEPTEMBER 2003 − REVISED OCTOBER 2003 PARAMETER MEASUREMENT INFORMATION FOR LEVEL SHIFTER VCC Input Generator VIN 50 Ω 50 Ω VG1 TEST CIRCUIT DUT 7V Input Generator S1 RL VO VI GND 50 Ω 50 Ω VG2 CL (see Note A) RL VCC S1 RL VI CL tpd(s) 5 V ± 0.5 V Open 500 Ω VCC or GND 50 pF tPLZ/tPZL 5 V ± 0.5 V 7V 500 Ω GND 50 pF 0.3 V tPHZ/tPZH 5 V ± 0.5 V Open 500 Ω VCC 50 pF 0.3 V TEST Output Control (VIN) V∆ 3V 1.5 V 3V 1.5 V 1.5 V 0V tPLH VOH Output 1.5 V Output Waveform 1 S1 at 7 V (see Note B) tPLZ 3.5 V 1.5 V tPZH tPHL 1.5 V VOL Output Waveform 2 S1 at Open (see Note B) VOLTAGE WAVEFORMS PROPAGATION DELAY TIMES (tpd(s)) 1.5 V 0V tPZL Output Control (VIN) Open VOL + V∆ VOL tPHZ 1.5 V VOH − V∆ VOH 0V VOLTAGE WAVEFORMS ENABLE AND DISABLE TIMES NOTES: A. CL includes probe and jig capacitance. B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control. Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control. C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr ≤ 2.5 ns, tf ≤ 2.5 ns. D. The outputs are measured one at a time with one transition per measurement. E. tPLZ and tPHZ are the same as tdis. F. tPZL and tPZH are the same as ten. G. tPLH and tPHL are the same as tpd(s). The tpd propagation delay is the calculated RC time constant of the typical ON-state resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance). H. All parameters and waveforms are not applicable to all devices. Figure 3. Test Circuit and Voltage Waveforms 6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 
     

  
   

    
  SCDS133A −SEPTEMBER 2003 − REVISED OCTOBER 2003 TYPICAL CHARACTERISTICS OUTPUT VOLTAGE HIGH vs SUPPLY VOLTAGE OUTPUT VOLTAGE HIGH vs SUPPLY VOLTAGE 4 3.25 100 µA 6 mA 12 mA 3.5 100 µA 3.25 6 mA 12 mA 3 24 mA 24 mA 3 2.75 2.5 2.25 2 1.75 1.5 4.5 TA = 25°C VI = VCC 3.75 VOH − Output Voltage High − V 3.5 2.75 2.5 2.25 2 1.75 4.75 5 5.25 5.5 1.5 4.5 5.75 4.75 VCC − Supply Voltage − V 5 5.25 5.5 5.75 VCC − Supply Voltage − V OUTPUT VOLTAGE HIGH vs SUPPLY VOLTAGE 4 TA = 0°C VI = VCC 3.75 VOH − Output Voltage High − V VOH − Output Voltage High − V 3.75 4 TA = 85°C VI = VCC 3.5 100 µA 3.25 6 mA 12 mA 3 24 mA 2.75 2.5 2.25 2 1.75 1.5 4.5 4.75 5 5.25 5.5 5.75 VCC − Supply Voltage − V Figure 4. VOH Values POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 7 
     

  
   

    
  SCDS133A −SEPTEMBER 2003 − REVISED OCTOBER 2003 TYPICAL CHARACTERISTICS (continued) OUTPUT VOLTAGE vs INPUT VOLTAGE 3.5 VCC = 5 V TA = 25°C VO − Output Voltage − V 3 100 µA 6 mA 12 mA 24 mA 2.5 2 1.5 1 5 0 0 1 2 3 4 5 VI − Input Voltage − V Figure 5. Data Output Voltage vs Data Input Voltage 8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 PACKAGE OPTION ADDENDUM www.ti.com 14-Oct-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) 74CBTD3384CDGVRE4 ACTIVE TVSOP DGV 24 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 CC384C Samples 74CBTD3384CDGVRG4 ACTIVE TVSOP DGV 24 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 CC384C Samples SN74CBTD3384CDBQR ACTIVE SSOP DBQ 24 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 CBTD3384C Samples SN74CBTD3384CDBR ACTIVE SSOP DB 24 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 CC384C Samples SN74CBTD3384CDGVR ACTIVE TVSOP DGV 24 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 CC384C Samples SN74CBTD3384CDW ACTIVE SOIC DW 24 25 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 CBTD3384C Samples SN74CBTD3384CDWR ACTIVE SOIC DW 24 2000 RoHS & Green NIPDAU | SN Level-1-260C-UNLIM -40 to 85 CBTD3384C Samples SN74CBTD3384CDWRG4 ACTIVE SOIC DW 24 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 CBTD3384C Samples SN74CBTD3384CPW ACTIVE TSSOP PW 24 60 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 CC384C Samples SN74CBTD3384CPWR ACTIVE TSSOP PW 24 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 CC384C Samples SN74CBTD3384CPWRE4 ACTIVE TSSOP PW 24 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 CC384C Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of