ADC11DL066
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SNAS223C – MARCH 2004 – REVISED MARCH 2013
ADC11DL066 Dual 11-Bit, 66 MSPS, 450 MHz Input Bandwidth A/D Converter w/Internal
Reference
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FEATURES
DESCRIPTION
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The ADC11DL066 is a dual, low power monolithic
CMOS analog-to-digital converter capable of
converting analog input signals into 11-bit digital
words at 66 Megasamples per second (MSPS),
minimum. This converter uses a differential, pipeline
architecture with digital error correction and an onchip sample-and-hold circuit to minimize die size and
power consumption while providing excellent dynamic
performance and a 450 MHz Full Power Bandwidth.
Operating on a single 3.3V power supply, the
ADC11DL066 achieves 10.3 effective bits and
consumes just 686 mW at 66 MSPS, including the
reference current. The Power Down feature reduces
power consumption to 75 mW.
1
2
Binary or 2’s Complement Output Format
Single +3.3V Supply Operation
Outputs 2.4V to 3.3V Compatible
Power Down Mode
On-Chip Reference
APPLICATIONS
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Ultrasound and Imaging
Instrumentation
Communications Receivers
Sonar/Radar
xDSL
Cable Modems
DSP Front Ends
KEY SPECIFICATIONS
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Resolution 11 Bits
DNL ±0.25 LSB (typ)
SNR (fIN = 10 MHz) 64 dB (typ)
SFDR (fIN = 10 MHz) 80 dB (typ)
Data Latency 6 Clock Cycles
Power Consumption
– Operating 686 mW (typ)
– Power Down 75 mW (typ)
The differential inputs provide a full scale differential
input swing equal to 2 times VREF with the possibility
of a single-ended input. Full use of the differential
input is recommended for optimum performance. The
digital outputs from the two ADCs are available on
separate 11-bit buses with an output data format
choice of offset binary or two’s complement.
To ease interfacing to lower voltage systems, the
digital output driver power pins of the ADC11DL066
can be connected to a separate supply voltage in the
range of 2.4V to the digital supply voltage.
This device is available in the 64-lead TQFP package
and will operate over the industrial temperature range
of −40°C to +85°C. An evaluation board is available
to ease the evaluation process.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2013, Texas Instruments Incorporated
ADC11DL066
SNAS223C – MARCH 2004 – REVISED MARCH 2013
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Connection Diagram
2
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ADC11DL066
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SNAS223C – MARCH 2004 – REVISED MARCH 2013
Stage
1
Stage
2
Stage
3
Stage
n
| |
S/H
VIN A-
Stage
9
Stage
10
2
||
2
VA
Stage
11
AGND
2
||
VIN A+
| |
Block Diagram
22
Timing
Control
11-Stage Pipeline Converter
3
CLK
VD
Digital Correction
DGND
11
11
VRP A
Output
Buffers
VRM A
DA0-DA10
OEA
VRN A
VDR
INT/EXT REF
DR GND
Bandgap
Reference
VREF
VRP B
OF
11
Output
Buffers
VRM B
VRN B
DB0-DB10
OEB
11
DGND
PD
Digital Correction
VD
3
11-Stage Pipeline Converter
Timing
Control
22
Stage
2
Stage
3
Stage
n
2
| |
Stage
1
2
| |
S/H
VIN B+
||
||
2
VIN B-
Stage
9
Stage
10
Stage
11
VA
AGND
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ADC11DL066
SNAS223C – MARCH 2004 – REVISED MARCH 2013
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Pin Descriptions and Equivalent Circuits
Pin No.
Symbol
Equivalent Circuit
Description
ANALOG I/O
15
2
VINA+
VINB+
16
1
VINA−
VINB−
7
VREF
11
INT/EXT REF
Differential analog Inputs. With a 1.0V reference voltage the
differential full-scale input signal level is 2.0 VP-P with each input pin
voltage centered on a common mode voltage, VCM. The negative
input pins may be connected to VCM for single-ended operation, but
a differential input signal is required for best performance.
VA
Reference input. This pin should be bypassed to AGND with a 0.1
µF capacitor when an external reference is used. VREF is 1.0V
nominal and should be between 0.8V to 1.5V.
Reference source select pin. With a logic low at this pin the internal
1.0V reference is selected and the VREF pin need not be driven.
With a logic high on this pin an external reference voltage should
be applied to VREF input pin 7.
DGND
13
5
VRPA
VRPB
14
4
VRMA
VRMB
These pins are high impedance reference bypass pins; they are not
reference output pins. Bypass per Reference Pins. DO NOT LOAD
these pins.
12
6
VRNA
VRNB
DIGITAL I/O
60
CLK
VD
22
41
OEA
OEB
59
PD
21
OF
OEA and OEB are the output enable pins that, when low, holds
their respective data output pins in the active state. When either of
these pins is high, the corresponding outputs are in a high
impedance state.
PD is the Power Down input pin. When high, this input puts the
converter into the power down mode. When this pin is low, the
converter is in the active mode.
DGND
4
Digital clock input. The range of frequencies for this input is as
specified in the electrical tables with ensured performance at 66
MHz. The input is sampled on the rising edge of this input.
Output Format pin. A logic low on this pin causes output data to be
in offset binary format. A logic high on this pin causes the output
data to be in 2’s complement format.
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Pin No.
Symbol
25 – 29
34 – 39
DA0–DA10
43–47
52–57
Equivalent Circuit
DB0–DB10
Description
Digital data output pins that make up the 11-bit conversion results
of their respective converters. DA0 and DB0 are the LSBs, while
DA10 and DB10 are the MSBs of the output words. Output levels
are TTL/CMOS compatible.
ANALOG POWER
9, 18, 19, 62,
63
VA
3, 8, 10, 17,
20, 61, 64
AGND
Positive analog supply pins. These pins should be connected to a
quiet +3.3V source and bypassed to AGND with 0.1 µF capacitors
located within 1 cm of these power pins, and with a 10 µF
capacitor.
The ground return for the analog supply.
DIGITAL POWER
Positive digital supply pin. This pin should be connected to the
same quiet +3.3V source as is VA and be bypassed to DGND with
a 0.1 µF capacitor located within 1 cm of the power pin and with a
10 µF capacitor.
33, 48
VD
32, 49
DGND
The ground return for the digital supply.
24, 42
DGND
These two pins are grounded internally and may be grounded or
left unconnected.
30, 51
23, 31, 40,
50, 58
VDR
DR GND
Positive digital supply pin for the ADC11DL066's output drivers.
This pin should be connected to a voltage source of +2.4V to VD
and be bypassed to DR GND with a 0.1 µF capacitor. If the supply
for this pin is different from the supply used for VA and VD, it should
also be bypassed with a 10 µF capacitor. VDR should never exceed
the voltage on VD. All bypass capacitors should be located within 1
cm of the supply pin.
The ground return for the digital supply for the ADC11DL066's
output drivers. These pins should be connected to the system
digital ground, but not be connected in close proximity to the
ADC11DL066's DGND or AGND pins. See LAYOUT AND
GROUNDING for more details.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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ADC11DL066
SNAS223C – MARCH 2004 – REVISED MARCH 2013
Absolute Maximum Ratings
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(1) (2) (3)
VA, VD, VDR
4.2V
≤ 100 mV
|VA–VD|
−0.3V to (VA or VD +0.3V)
Voltage on Any Input or Output Pin
Input Current at Any Pin
Package Input Current
(4)
±25 mA
(4)
±50 mA
Package Dissipation at TA = 25°C
ESD Susceptibility
See
Human Body Model
Machine Model
Soldering Temperature,
Infrared, 10 sec.
(6)
2500V
(6)
250V
(7)
235°C
−65°C to +150°C
Storage Temperature
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(5)
All voltages are measured with respect to GND = AGND = DGND = 0V, unless otherwise specified.
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the
Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
When the input voltage at any pin exceeds the power supplies (that is, VIN < AGND, or VIN > VA), the current at that pin should be
limited to 25 mA. The 50 mA maximum package input current rating limits the number of pins that can safely exceed the power supplies
with an input current of 25 mA to two.
The absolute maximum junction temperature (TJmax) for this device is 150°C. The maximum allowable power dissipation is dictated by
TJmax, the junction-to-ambient thermal resistance (θJA), and the ambient temperature, (TA), and can be calculated using the formula
PDMAX = (TJmax - TA ) / θJA. The values for maximum power dissipation will only be reached when the device is operated in a severe
fault condition (e.g. when input or output pins are driven beyond the power supply voltages, or the power supply polarity is reversed).
Obviously, such conditions should always be avoided.
Human body model is 100 pF capacitor discharged through a 1.5 kΩ resistor. Machine model is 220 pF discharged through 0Ω.
The 235°C reflow temperature refers to infrared reflow. For Vapor Phase Reflow (VPR), the following Conditions apply: Maintain the
temperature at the top of the package body above 183°C for a minimum 60 seconds. The temperature measured on the package body
must not exceed 220°C. Only one excursion above 183°C is allowed per reflow cycle.
Operating Ratings
(1) (2)
Operating Temperature
−40°C ≤ TA ≤ +85°C
Supply Voltage (VA, VD)
+3.0V to +3.6V
Output Driver Supply (VDR)
+2.4V to VD
VREF Input
0.8V to 1.5V
−0.05V to (VD + 0.05V)
CLK, PD, OE
0V to (VA − 0.5V)
Analog Input Pins
Common Mode Input Voltage
VCM
0.5V to 1.8V
≤100mV
|AGND–DGND|
(1)
(2)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the
Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
All voltages are measured with respect to GND = AGND = DGND = 0V, unless otherwise specified.
Package Thermal Resistance
6
Package
θJ-A
64-Lead TQFP
50°C / W
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Converter Electrical Characteristics
Unless otherwise specified, the following specifications apply for AGND = DGND = DR GND = 0V, VA = VD = +3.3V, VDR =
+2.5V,PD = 0V, INT/EXT REF pin = +3.3V, VREF = +1.0V, fCLK = 66 MHz, fIN = 10 MHz, tr = tf = 2 ns, CL = 15 pF/pin. Boldface
limits apply for TJ = TMIN to TMAX: all other limits TJ = 25°C (1) (2) (3)
Symbol
Parameter
Conditions
Typical
Limits
11
Bits (min)
±0.5
±1.6
LSB (max)
±0.25
±0.68
LSB (max)
0.4
±4
%FS (max)
−0.1
±3.6
%FS (max)
+1.3
-1.6
%FS (max)
%FS (min)
(4)
(4)
Units
(Limits)
STATIC CONVERTER CHARACTERISTICS
Resolution with No Missing Codes
(5)
INL
Integral Non Linearity
DNL
Differential Non Linearity
PGE
Positive Gain Error
NGE
Negative Gain Error
TC GE
Gain Error Tempco
−40°C ≤ TA ≤ +85°C
VOFF
Offset Error (VIN+ = VIN−)
TC VOFF
Offset Error Tempco
0.5
−0.18
−40°C ≤ TA ≤ +85°C
ppm/°C
0.1
ppm/°C
Under Range Output Code
0
0
Over Range Output Code
2047
2047
REFERENCE AND ANALOG INPUT CHARACTERISTICS
VCM
Common Mode Input Voltage
CIN
VIN Input Capacitance (each pin to GND)
VREF
Reference Voltage
1.0
VIN = 2.5 Vdc + 0.7 Vrms
(CLK LOW)
8
(CLK HIGH)
7
(6)
1.00
Reference Input Resistance
0.5
V (min)
1.8
V (max)
pF
pF
0.8
V (min)
1.5
V (max)
100
MΩ
0 dBFS Input, Output at −3 dB
450
MHz
fIN = 1 MHz, VIN = −0.5 dBFS
64
fIN = 10 MHz, VIN = −0.5 dBFS
64
fIN = 33 MHz, VIN = −0.5 dBFS
62
DYNAMIC CONVERTER CHARACTERISTICS
FPBW
SNR
Full Power Bandwidth
Signal-to-Noise Ratio
dB
62
dB (min)
dB
(1)
The inputs are protected as shown below. Input voltage magnitudes above VA or below GND will not damage this device, provided
current is limited per Note 4 under Absolute Maximum Ratings. However, errors in the A/D conversion can occur if the input goes above
VA or below GND by more than 100 mV. As an example, if VA is +3.3V, the full-scale input voltage must be ≤+3.4V to ensure accurate
conversions.
(2)
(3)
(4)
To specify accuracy, it is required that |VA–VD| ≤ 100 mV and separate bypass capacitors are used at each power supply pin.
With the test condition for VREF = +1.0V (2VP-P differential input), the 11-bit LSB is 976 µV.
Typical figures are at TJ = 25°C, and represent most likely parametric norms. Test limits are specified to TI's AOQL (Average Outgoing
Quality Level).
Integral Non Linearity is defined as the deviation of the analog value, expressed in LSBs, from the straight line that passes through
positive and negative full-scale.
Optimum performance will be obtained by keeping the reference input in the 0.8V to 1.5V range. The LM4051CIM3-ADJ (SOT-23
package) is recommended for external reference applications.
(5)
(6)
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Converter Electrical Characteristics (continued)
Unless otherwise specified, the following specifications apply for AGND = DGND = DR GND = 0V, VA = VD = +3.3V, VDR =
+2.5V,PD = 0V, INT/EXT REF pin = +3.3V, VREF = +1.0V, fCLK = 66 MHz, fIN = 10 MHz, tr = tf = 2 ns, CL = 15 pF/pin. Boldface
limits apply for TJ = TMIN to TMAX: all other limits TJ = 25°C (1) (2) (3)
Symbol
SINAD
ENOB
THD
H2
H3
SFDR
Parameter
Conditions
Typical
(4)
Limits
(4)
Units
(Limits)
fIN = 1 MHz, VIN = −0.5 dBFS
63
fIN = 10 MHz, VIN = −0.5 dBFS
63
fIN = 33 MHz, VIN = −0.5 dBFS
62
dB
fIN = 1 MHz, VIN = −0.5 dBFS
10.3
Bits
fIN = 10 MHz, VIN = −0,5 dBFS
10.3
fIN = 33 MHz, VIN = −0,5 dBFS
10.1
fIN = 1 MHz, VIN = −0.5 dBFS
−78
fIN = 10 MHz, VIN = −0.5 dBFS
−78
fIN = 33 MHz, VIN = −0.5 dBFS
−78
fIN = 1 MHz, VIN = −0.5 dBFS
−84
fIN = 10 MHz, VIN = −0.5 dBFS
−84
fIN = 33 MHz, VIN = −0.5 dBFS
−84
fIN = 1 MHz, VIN = −0.5 dBFS
−84
fIN = 10 MHz, VIN = −0.5 dBFS
−84
fIN = 33 MHz, VIN = −0.5 dBFS
−83
fIN = 1 MHz, VIN = −0.5 dBFS
80
fIN = 10 MHz, VIN = −0.5 dBFS
80
fIN = 33 MHz, VIN = −0.5 dBFS
74
dB
Channel—Channel Offset Match
±0.03
%FS
Channel—Channel Channel gain Match
±0.1
%FS
10 MHz Tested, Channel;
20 MHz Other Channel
80
dB
10 MHz Tested, Channel;
195 MHz Other Channel
63
dB
Signal-to-Noise and Distortion
Effective Number of Bits
Total Harmonic Distortion
Second Harmonic
Third Harmonic
Spurious Free Dynamic Range
dB
62
10.0
dB (min)
Bits (min)
Bits
dB
-69.7
dB (max)
dB
dB
−73.5
dB (max)
dB
dB
−73.3
dB (max)
dB
dB
73.5
dB (min)
INTER-CHANNEL CHARACTERISTICS
Crosstalk
8
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DC and Logic Electrical Characteristics
Unless otherwise specified, the following specifications apply for AGND = DGND = DR GND = 0V, VA = VD = +3.3V, VDR =
+2.5V, PD = 0V, INT/EXT REF pin = 3.3V, VREF = +1.0V, fCLK = 66 MHz, fIN = 10 MHz, tr = tf = 2 ns, CL = 15 pF/pin. Boldface
limits apply for TJ = TMIN to TMAX: all other limits TJ = 25°C (1) (2) (3)
Symbol
Parameter
Conditions
Typical
(4)
Limits
(4)
Units
(Limits)
CLK, PD, OE DIGITAL INPUT CHARACTERISTICS
VIN(1)
Logical “1” Input Voltage
VD = 3.6V
2.0
V (min)
VIN(0)
Logical “0” Input Voltage
VD = 3.0V
1.0
V (max)
IIN(1)
Logical “1” Input Current
VIN = 3.3V
10
µA
IIN(0)
Logical “0” Input Current
VIN = 0V
−10
µA
CIN
Digital Input Capacitance
5
pF
D0–D11 DIGITAL OUTPUT CHARACTERISTICS
VOUT(1)
Logical “1” Output Voltage
IOUT = −0.5 mA
VOUT(0)
Logical “0” Output Voltage
IOUT = 1.6 mA, VDR = 3V
IOZ
TRI-STATE Output Current
+ISC
Output Short Circuit Source Current
−ISC
Output Short Circuit Sink Current
COUT
Digital Output Capacitance
VDR = 2.5V
2.3
V (min)
VDR = 3V
2.7
V (min)
0.4
V (max)
VOUT = 2.5V or 3.3V
100
nA
VOUT = 0V
−100
nA
VOUT = 0V
−20
mA
VOUT = VDR
20
mA
5
pF
POWER SUPPLY CHARACTERISTICS
IA
Analog Supply Current
PD Pin = DGND, VREF = 1.0V
PD Pin = VDR
197
14
237
mA (max)
mA
ID
Digital Supply Current
PD Pin = DGND
PD Pin = VDR, fCLK = 0
11
8.7
35
mA (max)
mA
Digital Output Supply Current
PD Pin = DGND, CL = 0 pF
PD Pin = VDR, fCLK = 0
(5)
IDR