ADS4449
ADS4449
SBAS603B – APRIL 2013 – REVISED NOVEMBER
2020
SBAS603B – APRIL 2013 – REVISED NOVEMBER 2020
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ADS4449 Quad-Channel, 14-Bit, 250-MSPS, Low-Power ADC
1 Features
3 Description
•
•
•
•
The ADS4449 is a high-linearity, quad-channel, 14-bit,
250-MSPS,
analog-to-digital
converter
(ADC).
Designed for low power consumption and high
spurious-free dynamic range (SFDR), the device has
low-noise performance and outstanding SFDR over a
large input frequency range.
•
•
•
•
Quad Channel
14-Bit Resolution
Maximum Sampling Data Rate: 250 MSPS
Power Dissipation:
– 365 mW per Channel
Spectral Performance at 170-MHz IF (typ):
– SNR: 69 dBFS
– SFDR: 86 dBc
DDR LVDS Digital Output Interface
Internal Dither
Package: 144-Terminal NFBGA (10.00 mm ×
10.00 mm)
Device Information
PACKAGE(1)
PART NUMBER
ADS4449
(1)
NFBGA (144)
BODY SIZE (NOM)
10.00 mm × 10.00 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
2 Applications
•
Multi-Carrier GSM Cellular Infrastructure Base
Stations
• RADAR and Smart Antenna Arrays
• Multi-Carrier Multi-Mode Cellular Infrastructure
Base Stations
• Active Antenna Arrays for Wireless Infrastructures
• Communications Test Equipment
spacer
spacer
0
fIN = 170 MHz
SFDR = 89 dBc
SINAD = 68.9 dBFS
SNR = 69 dBFS
THD = 85 dBc
Amplitude (dB)
−20
−40
−60
−80
−100
−120
0
25
50
75
Frequency (MHz)
100
125
G005
Spectrum for 170-MHz Input Frequency
An©IMPORTANT
NOTICEIncorporated
at the end of this data sheet addresses availability, warranty, changes, use in
safety-critical
applications,
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2020 Texas Instruments
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SBAS603B – APRIL 2013 – REVISED NOVEMBER 2020
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 5
6.1 Absolute Maximum Ratings........................................ 5
6.2 ESD Ratings............................................................... 5
6.3 Recommended Operating Conditions.........................5
6.4 Thermal Information....................................................6
6.5 Electrical Characteristics.............................................7
6.6 Digital Characteristics................................................. 9
6.7 Timing Requirements................................................ 10
6.8 Timing Characteristics, Serial interface.....................10
6.9 Typical Characteristics.............................................. 12
6.10 Typical Characteristics: Contour............................. 18
7 Parameter Measurement Information.......................... 19
7.1 LVDS Output Timing................................................. 19
8 Detailed Description......................................................21
8.1 Overview................................................................... 21
8.2 Functional Block Diagram......................................... 21
8.3 Feature Description...................................................22
8.4 Device Functional Modes..........................................24
8.5 Programming............................................................ 27
8.6 Register Maps...........................................................29
9 Application and Implementation.................................. 43
9.1 Application Information............................................. 43
9.2 Typical Application.................................................... 43
10 Power Supply Recommendations..............................48
11 Layout........................................................................... 49
11.1 Layout Guidelines................................................... 49
11.2 Layout Example...................................................... 49
12 Device and Documentation Support..........................50
12.1 Device Nomenclature..............................................50
12.2 Documentation Support.......................................... 51
12.3 Receiving Notification of Documentation Updates..51
12.4 Support Resources................................................. 51
12.5 Trademarks............................................................. 51
12.6 Electrostatic Discharge Caution..............................51
12.7 Glossary..................................................................51
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (April 2013) to Revision B (November 2020)
Page
• Added Low Sampling Rate mode to Table 8-2 ................................................................................................ 24
Changes from Revision * (April 2013) to Revision A (January 2016)
Page
• Added Internal Dither Features bullet ................................................................................................................ 1
• Added ESD Ratings table, Feature Description section, Device Functional Modes section, Application and
Implementation section, Power Supply Recommendations section, Layout section, Device and
Documentation Support section, and Mechanical, Packaging, and Orderable Information section................... 1
• Deleted Package and Ordering Information because the data is repeated in the Package Option Addendum 1
• Deleted SNRB from the configuration registers block in the functional block diagram ......................................1
• Changed Clock Inputs, Input clock sample rate parameter minimum specification in Recommended Operating
Conditions table.................................................................................................................................................. 5
• Changed Table 8-1 .......................................................................................................................................... 23
2
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5 Pin Configuration and Functions
1
2
3
4
5
6
7
8
9
10
11
12
A
AVDD
AVDD
CINM
CINP
AVDD
VCM
VCM
AVDD
BINM
BINP
AVDD
AVDD
B
DINP
AVSS
AVDD
AVDD
AVSS
AVDD33
AVDD33
AVSS
AVDD
AVDD
AVSS
AINM
C
DINM
AVSS
AVSS
AVSS
AVSS
CLKINM
CLKINP
AVSS
AVSS
AVSS
AVSS
AINP
D
AVDD
AVDD
VCM
AVSS
AVSS
AVSS
AVSS
AVSS
AVSS
VCM
AVDD
AVDD
E
AVDD33
AVDD33
NC
DRVSS
DRVSS
DRVSS
DRVSS
DRVSS
DRVSS
PDN
AVDD33
AVDD33
F
DCD13M
DCD13P
DRVDD
DRVSS
DRVSS
DRVSS
DRVSS
DRVSS
DRVSS
DRVDD
DAB13P
DAB13M
G
DCD12M
DCD12P
NC
NC
NC
RESET
SCLK
SDATA
SEN
SDOUT
DAB12P
DAB12M
H
DCD11M
DCD11P
DCD6P
DCD6M
DRVDD
DRVDD
DRVDD
DRVDD
DAB6M
DAB6P
DAB11P
DAB11M
J
DCD10M
DCD10P
DCD5P
DCD5M
DCD2P
DRVDD
DRVDD
DAB2M
DAB5M
DAB5P
DAB10P
DAB10M
K
DCD9M
DCD9P
DCD4P
DCD4M
DCD2M
DRVDD
DRVDD
DAB2P
DAB4M
DAB4P
DAB9P
DAB9M
L
DCD8M
DCD8P
DCD3P
DCD3M
DCD1P
DCD1M
DAB1M
DAB1P
DAB3M
DAB3P
DAB8P
DAB8M
M
DCD7M
DCD7P
CLKOUT
CDP
CLKOUT
CDM
DCD0P/
OVRCDP
DCD0M/
OVRCDM
DAB0M/
OVRABM
DAB0P/
OVRABP
CLKOUT
ABM
CLKOUT
ABP
DAB7P
DAB7M
Figure 5-1. ZCR Package, 144-Pin NFBGA, Top View
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Table 5-1. Pin Functions
PIN
NAME
I/O
DESCRIPTION
AINM
B12
I
Negative differential analog input for channel A
AINP
C12
I
Positive differential analog input for channel A
AVDD33
B6, B7, E1, E2, E11, E12
I
Analog 3.3-V power supply
AVDD
A1, A2, A5, A8, A11, A12,
B3, B4, B9, B10, D1, D2,
D11, D12
I
Analog 1.9-V power supply
AVSS
B2, B5, B8, B11, C2-C5,
C8-C11, D4-D9
I
Analog ground
BINM
A9
I
Negative differential analog input for channel B
BINP
A10
I
Positive differential analog input for channel B
CINM
A3
I
Negative differential analog input for channel C
CINP
A4
I
Positive differential analog input for channel C
CLKINM
C6
I
Negative differential clock input
CLKINP
C7
I
Positive differential clock input
CLKOUTABM
M9
O
Negative differential LVDS clock output for channel A and B
CLKOUTABP
M10
O
Positive differential LVDS clock output for channel A and B
CLKOUTCDM
M4
O
Negative differential LVDS clock output for channels C and D
CLKOUTCDP
M3
O
Positive differential LVDS clock output for channels C and D
DAB[13:1]P, DAB0P/
OVRABP,
DAB[13:1]M, DAB0M/
OVRABM
F11, F12, G11, G12,
H9-H12, J8-J12, K8-K12,
L7-L12, M7, M8, M11, M12
O
DDR LVDS outputs for channels A and B.
DCD[13:1]P, DCD0P/
OVRCDP,
DCD[13:1]M, DCD0M/
OVRCDM
F1, F2, G1, G2, H1-H4,
J1-J5, K1-K5, L1-L6, M1,
M2, M5, M6
O
DDR LVDS outputs for channels C and D.
DINM
C1
I
Negative differential analog input for channel D
DINP
B1
I
Positive differential analog input for channel D
F3, F10, H5-H8, J6, J7, K6,
K7
I
Digital 1.8-V power supply
DRVDD
DRVSS
E4-E9, F4-F9
I
Digital ground
E3, G3, G4, G5
-
Do not connect
PDN
E10
I
Power-down control; active high. Logic high is power down.
RESET
G6
I
Hardware reset; active high
SCLK
G7
I
Serial interface clock input
SDATA
G8
I
Serial interface data input
SDOUT
G10
O
Serial interface data output
SEN
G9
I
Serial interface enable
VCM
A6, A7, D3, D10
O
Common-mode voltage for analog inputs. All VCM terminals are internally connected together.
NC
4
NO.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
Supply voltage
Voltage between
Voltage applied to input terminals
Temperature
MIN
MAX
AVDD33
–0.3
3.6
AVDD
–0.3
2.1
DRVDD
–0.3
2.1
AVSS and DRVSS
–0.3
0.3
AVDD and DRVDD
–2.4
2.4
AVDD33 and DRVDD
–2.4
3.9
AVDD33 and AVDD
–2.4
3.9
XINP, XINM
–0.3
minimum (1.9, AVDD +
0.3)
CLKP, CLKM(2)
–0.3
minimum (1.9, AVDD +
0.3)
RESET, SCLK, SDATA, SEN, PDN
–0.3
3.9
Operating free-air, TA
–40
(2)
V
V
V
85
Operating junction, TJ
°C
150
Storage, Tstg
(1)
UNIT
–65
150
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Section 6.3.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
When AVDD is turned off, TI recommends switching off the input clock (or ensuring the voltage on CLKP and CLKM is less than
| 0.3 V |). This recommendation prevents the ESD protection diodes at the clock input terminals from turning on.
6.2 ESD Ratings
VALUE
Human-body model (HBM), per ANSI/ESDA/JEDEC
V(ESD)
(1)
(2)
Electrostatic discharge
JS-001(1)
UNIT
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101(2)
V
±500
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
3.15
3.3
3.45
V
1.8
1.9
2
V
1.7
1.8
2
V
SUPPLIES
AVDD33
AVDD
Supply voltage
DRVDD
ANALOG INPUTS
Differential input voltage range
VIC
2
Input common-mode voltage
VPP
VCM ± 0.025
Analog input common-mode current (per input terminal of each channel)
V
1.5
VCM current capability
µA/MSPS
5
Maximum analog input frequency
amplitude(2)
400
1.4-VPP input amplitude
500
2-VPP input
mA
MHz
CLOCK INPUTS
Input clock sample rate
(1)
10
250
MSPS
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6.3 Recommended Operating Conditions (continued)
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
0.2
1.5
Sine wave, ac-coupled
Input clock amplitude differential
(VCLKP – VCLKM)
LVPECL, ac-coupled
1.6
LVDS, ac-coupled
0.7
LVCMOS, single-ended, ac-coupled
Input clock duty cycle
MAX
UNIT
VPP
1.8
40%
50%
60%
DIGITAL OUTPUTS
CLOAD
Maximum external load capacitance from each output terminal to DRVSS
(default strength)
3.3
pF
RLOAD
Differential load resistance between the LVDS output pairs (LVDS mode)
100
Ω
TEMPERATURE RANGE
TA
Operating free-air temperature
TJ
Operating junction temperature
(1)
(2)
–40
85
Recommended
Maximum rated
105
(2)
125
°C
°C
When input clock sample rate is below 200 MSPS Low Sample Rate Mode is required.
Prolonged use at this junction temperature may increase the device failure-in-time (FIT) rate.
6.4 Thermal Information
ADS4449
THERMAL
METRIC(1)
ZCR (NFBGA)
UNIT
144 PINS
RθJA
Junction-to-ambient thermal resistance
35.9
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
5.1
°C/W
RθJB
Junction-to-board thermal resistance
12.6
°C/W
ψJT
Junction-to-top characterization parameter
0.1
°C/W
ψJB
Junction-to-board characterization parameter
12.4
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
6
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics
Typical values are at TA = 25°C, full temperature range is TMIN = –40°C to TMAX = 85°C, ADC clock frequency = 250 MHz,
50% clock duty cycle, AVDD33V = 3.3 V, AVDD = 1.9 V, DRVDD = 1.8 V, and –1-dBFS differential input, unless otherwise
noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
RESOLUTION
Default resolution
14
Bits
2
VPP
ANALOG INPUTS
Differential input full-scale
VCM
Common mode input voltage
1.15
RIN
Input resistance, differential
V
At 170-MHz input frequency
700
Ω
CIN
Input capacitance, differential
At 170-MHz input frequency
3.3
pF
Analog input bandwidth, 3 dB
with a 50-Ω source driving the ADC analog
inputs
500
MHz
DYNAMIC ACCURACY
EO
EG
Offset error
Gain error(2)
Specified across devices and channels
–15
15
As a result of internal
reference inaccuracy
alone
Specified across devices and channels
–5
5
Of channel alone
Specified across channels within a device
mV
%FS
±0.2
Channel gain error temperature coefficient(2)
0.001
Δ%/°C
POWER SUPPLY(1)
IAVDD33
IAVDD
3.3-V analog supply
Supply current
51
mA
1.9-V analog supply
350
mA
IDRVDD
1.8-V digital supply
355
mA
PTOTAL
Total
1.47
PDISS(standby) Power dissipation
Standby
400
PDISS(global)
Global power-down
6
1.6
W
mW
52
mW
DYNAMIC AC CHARACTERISTICS
fIN = 40 MHz
71.1
fIN = 70 MHz
71
fIN = 140 MHz
SNR
Signal-to-noise ratio
fIN = 170 MHz
69.5
67.5
68.5
fIN = 307 MHz
67.5
fIN = 350 MHz
SINAD
Signal-to-noise and distortion ratio
70.9
fIN = 70 MHz
70.8
fIN = 140 MHz
69.3
fIN = 170 MHz
Spurious-free dynamic range
66.9
68.8
fIN = 220 MHz
68.3
fIN = 307 MHz
66.8
fIN = 350 MHz
66.3
fIN = 40 MHz
84
fIN = 70 MHz
87
fIN = 170 MHz
dBFS
67
fIN = 40 MHz
fIN = 140 MHz
SFDR
69
fIN = 220 MHz
dBFS
85
78.5
86
fIN = 220 MHz
84
fIN = 307 MHz
78
fIN = 350 MHz
77
dBc
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6.5 Electrical Characteristics (continued)
Typical values are at TA = 25°C, full temperature range is TMIN = –40°C to TMAX = 85°C, ADC clock frequency = 250 MHz,
50% clock duty cycle, AVDD33V = 3.3 V, AVDD = 1.9 V, DRVDD = 1.8 V, and –1-dBFS differential input, unless otherwise
noted.
PARAMETER
TEST CONDITIONS
MIN
83
fIN = 70 MHz
84
fIN = 140 MHz
THD
Total harmonic distortion
Second-order harmonic distortion(3) (4)
75
Third-order harmonic distortion
Worst spur
(non HD2, HD3)
82
fIN = 307 MHz
76
fIN = 350 MHz
75
fIN = 40 MHz
96
fIN = 70 MHz
87
Differential nonlinearity
INL
Integral nonlinearity
PSRR
(1)
(2)
(3)
(4)
8
UNITS
dBc
86
fIN = 170 MHz
78.5
dBc
86
fIN = 220 MHz
84
fIN = 307 MHz
78
fIN = 350 MHz
77
fIN = 40 MHz
83
fIN = 70 MHz
89
85
fIN = 170 MHz
79.5
86
fIN = 220 MHz
85
fIN = 307 MHz
80
fIN = 350 MHz
78
fIN = 40 MHz
100
fIN = 70 MHz
100
fIN = 140 MHz
dBc
95
fIN = 170 MHz
87
95
fIN = 220 MHz,
95
fIN = 307 MHz
85
fIN = 350 MHz
DNL
83
fIN = 220 MHz
fIN = 140 MHz
HD3
MAX
82
fIN = 170 MHz
fIN = 140 MHz
HD2
TYP
fIN = 40 MHz
dBc
85
–0.95
±0.5
±1.5
LSBs
±5.25
LSBs
Input overload recovery
Recovery to within 1% (of final value) for 6dB output overload with sine-wave input
1
Clock
cycle
Crosstalk
with a full-scale, 220-MHz signal on
aggressor channel and no signal on victim
channel
90
dB
AC power-supply rejection ratio
For 50-mVPP signal on AVDD supply
< 30
dB
A 185-MHz, full-scale, sine-wave input signal is applied to all four channels.
There are two sources of gain error: internal reference inaccuracy and channel gain error.
Phase and amplitude imbalances onboard must be minimized to obtain good performance.
The minimum value across temperature is ensured by bench characterization.
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6.6 Digital Characteristics
The dc specifications refer to the condition where the digital outputs are not switching, but are permanently at a valid logic
level 0 or 1. AVDD33 = 3.3 V, AVDD = 1.9 V, and DRVDD = 1.8 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DIGITAL INPUTS(1) (RESET, SCLK, SDATA, SEN, PDN)
VIH
High-level input voltage
All digital inputs support 1.8-V logic
levels. SPI supports 3.3-V logic levels.
VIL
Low-level input voltage
All digital inputs support 1.8-V logic
levels. SPI supports 3.3-V logic levels.
IIH
High-level input
current
IIL
Low-level input
current
1.25
V
0.45
RESET, SCLK, PDN
terminals
VHIGH = 1.8 V
10
SEN(2)
VHIGH = 1.8 V
0
RESET, SCLK, PDN
terminals
VLOW = 0 V
0
SEN terminal
VLOW = 0 V
10
terminal
V
µA
µA
DIGITAL OUTPUTS (SDOUT)
VOH
High-level output voltage
VOL
Low-level output voltage
DRVDD –
0.1
DRVDD
V
0
0.1
V
DIGITAL OUTPUTS, LVDS INTERFACE
(DAB[13:0]P, DAB[13:0]M, DCD[13:0]P, DCD[13:0]M, CLKOUTABP, CLKOUTABM, CLKOUTCDP, CLKOUTCDM)
High-level output differential voltage(3)
Standard-swing LVDS
270
350
465
mV
VODL
Low-level output differential
Standard-swing LVDS
–465
–350
–270
mV
VOCM
Output common-mode voltage
VODH
(1)
(2)
(3)
1.05
V
RESET, SDATA, and SCLK have an internal 150-kΩ pull-down resistor.
SEN has an internal 150-kΩ pull-up resistor to DRVDD.
with an external 100-Ω termination.
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6.7 Timing Requirements
Typical values are at 25°C, AVDD33 = 3.3 V, AVDD = 1.9 V, DRVDD = 1.8 V, sine-wave input clock, CLOAD = 3.3 pF(2), and R
(3)
LOAD = 100 Ω , unless otherwise noted.
Minimum and maximum values are across the full temperature range of TMIN = –40°C to TMAX = 85°C.
See Note (1)
tA
Aperture delay
tJ
Aperture delay matching
Between any two channels of the same device
Variation of aperture delay
Between two devices at the same temperature and
DRVDD supply
MIN
NOM
MAX
0.7
1.2
1.6
ps
±150
ps
140
fs rms
Time to valid data after coming out of global power
down
ADC latency(4) (5)
ns
±70
Aperture jitter
Wake up time
UNIT
100
µs
Time to valid data after coming out of channel power
down
10
Default latency in 14-bit mode
10
Digital gain enabled
13
Digital gain and offset correction enabled
14
Output clock cycles
OUTPUT TIMING(6)
tSU
Data setup time(7) (8) (9)
Data valid to CLKOUTxxP zero-crossing
0.6
0.85
ns
tH
Data hold time(7) (8) (9)
CLKOUTxxP zero-crossing to data becoming invalid
0.6
0.84
ns
LVDS bit clock duty cycle
Differential clock duty cycle (CLKOUTxxP –
CLKOUTxxM)
tPDI
Clock propagation delay(5)
Input clock falling edge cross-over to output clock
falling edge cross-over, 184 MSPS ≤ sampling
frequency ≤ 250 MSPS
tdelay
Delay time
Input clock falling edge cross-over to output clock
falling edge cross-over, 184 MSPS ≤ sampling
frequency ≤ 250 MSPS
tRISE, t
Data rise and fall time
Rise time measured from –100 mV to 100 mV
0.1
ns
Rise time measured from –100 mV to 100 mV
0.1
ns
FALL
tCLKRISE, Output clock rise and fall
tCLKFALL time
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
50%
0.25 × tS + tdelay
6.9
8.65
ns
10.5
ns
Timing parameters are ensured by design and characterization and are not tested in production.
CLOAD is the effective external single-ended load capacitance between each output terminal and ground.
RLOAD is the differential load resistance between the LVDS output pair.
ADC latency is given for channels B and D. For channels A and C, latency reduces by half of the output clock cycles.
Overall latency = ADC latency + tPDI.
Measurements are done with a transmission line of 100-Ω characteristic impedance between the device and load. Setup and hold time
specifications take into account the effect of jitter on the output data and clock.
Data valid refers to a logic high of 100 mV and a logic low of –100 mV.
Note that these numbers are taken with delayed output clocks by writing the following registers: address A9h, value 02h; and
address ACh, value 60h. Refer to the section. By default after reset, minimum setup time and minimum hold times are 520 ps each.
The setup and hold times of a channel are measured with respect to the same channel output clock.
6.8 Timing Characteristics, Serial interface
see Figure 6-1
fSCLK
SCLK frequency (equal to 1 / tSCLK)
MIN
> dc
NOM
MAX
UNIT
20
MHz
tSLOADS
SEN to SCLK setup time
25
ns
tSLOADH
SCLK to SEN hold time
25
ns
tDSU
SDI setup time
25
ns
tDH
SDI hold time
25
ns
10
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Table 6-1. LVDS Timings Across Lower Sampling Frequencies
SETUP TIME (ns)
SAMPLING FREQUENCY
(MSPS)
MIN
TYP
210
0.89
185
1.06
HOLD TIME (ns)
MAX
MIN
TYP
1.03
0.82
1.01
1.21
0.95
1.15
Register Address
SDATA
A7
A6
A5
A4
A3
MAX
Register Data
A2
A1
A0
D7
D6
D5
D4
D3
D2
D1
D0
tDH
tSCLK
tDSU
SCLK
tSLOADS
tSLOADH
SEN
RESET
Figure 6-1. Serial Interface Timing
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6.9 Typical Characteristics
0
0
−20
−20
Amplitude (dBFS)
Amplitude (dBFS)
At 25°C, AVDD = 1.9 V, AVDD3V = 3.3 V, DRVDD = 1.8 V, rated sampling frequency, 0-dB gain, sine-wave input
clock, 1.5-V PP differential clock amplitude, 50% clock duty cycle, –1-dBFS differential analog input, DDR LVDS
output interface, and 32k-point FFT, unless otherwise noted.
−40
−60
−80
−100
−120
0
25
50
75
Frequency (MHz)
100
−80
−120
125
SFDR = 84 dBc
SNR = 71.1 dBFS
SINAD = 70.9 dBFS
THD = 84 dBc
25
fIN = 70 MHz
50
75
Frequency (MHz)
100
125
G002
SFDR = 87 dBc
SNR = 70.9 dBFS
SINAD = 70.8 dBFS
THD = 84 dBc
Figure 6-3. FFT for 70-MHz Input Signal
0
−20
−20
−40
−40
Amplitude (dB)
0
−60
−80
−100
−120
0
G001
Figure 6-2. FFT for 40-MHz Input Signal
Amplitude (dBFS)
−60
−100
fIN = 40 MHz
−60
−80
−100
0
fIN = 100 MHz
25
50
75
Frequency (MHz)
100
125
−120
0
G003
SFDR = 85 dBc
SNR = 70.2 dBFS
SINAD = 70.1 dBFS
THD = 84 dBc
Figure 6-4. FFT for 100-MHz Input Signal
12
−40
fIN = 140 MHz
25
50
75
Frequency (MHz)
100
125
G004
SFDR = 87 dBc
SNR = 69.7 dBFS
SINAD = 69.6 dBFS
THD = 84 dBc
Figure 6-5. FFT for 140-MHz Input Signal
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0
0
−20
−20
−40
−40
Amplitude (dB)
Amplitude (dB)
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−60
−80
0
25
50
75
Frequency (MHz)
fIN = 170 MHz
100
125
−120
0
25
SFDR = 89 dBc
SNR = 69 dBFS
SINAD = 68.9 dBFS
THD = 85 dBc
fIN = 230 MHz
−20
−20
Amplitude (dBFS)
0
−40
−60
−80
0
25
50
75
Frequency (MHz)
100
G006
SFDR = 86 dBc
SNR = 68.9 dBFS
SINAD = 68.5 dBFS
THD = 84 dBc
−40
−60
−80
fIN2 = 50 MHz
−120
125
0
25
G007
Each Tone at –7-dBFS Amplitude
fIN1 = 45 MHz
50
75
Frequency (MHz)
100
125
G008
Each Tone at –36-dBFS Amplitude
SFDR = 92 dBFS
fIN1 = 45 MHz
2-Tone IMD = 87 dBFS
fIN2 = 50 MHz
SFDR = 99 dBFS
2-Tone IMD = 99 dBFS
Figure 6-8. FFT for Two-Tone Input Signal
Figure 6-9. FFT for Two-Tone Input Signal
0
0
−20
−20
−40
−40
Amplitude (dB)
Amplitude (dB)
125
−100
−100
−60
−80
−100
−120
100
Figure 6-7. FFT for 230-MHz Input Signal
0
−120
50
75
Frequency (MHz)
G005
Figure 6-6. FFT for 170-MHz Input Signal
Amplitude (dBFS)
−80
−100
−100
−120
−60
−60
−80
−100
0
25
50
75
Frequency (MHz)
100
125
Each Tone at –7-dBFS Amplitude
fIN1 = 185.1 MHz
fIN2 = 190.1 MHz
−120
0
25
G009
50
75
Frequency (MHz)
100
125
G010
Each Tone at –36-dBFS Amplitude
SFDR = 102 dBFS
fIN1 = 185.1 MHz
2-Tone IMD = 97 dBFS
fIN2 = 190.1 MHz
SFDR = 100 dBFS
2-Tone IMD = 101 dBFS
Figure 6-10. FFT for Two-Tone Input Signal
Figure 6-11. FFT for Two-Tone Input Signal
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93
25
Temperature = −40°C
Temperature = 25°C
Temperature = 85°C
91
20
85
Count (%)
SFDR (dBc)
88
82
79
15
10
76
5
73
40
80
120
160 200 240 280
Input Frequency (MHz)
320
360
−108
−105
−104
−103
−102
−101
−100
−99
−98
−97
−96
−95
−94
−93
−92
−91
−90
−89
−88
−87
−86
−85
−84
−83
−82
0
70
400
HD2 (dBc)
G011
Figure 6-12. Spurious-Free Dynamic Range vs
Input Frequency
G039
Input Frequency = 170 MHz
Figure 6-13. HD2 Distribution over Multiple Devices
72
104
40 MHz
100 MHz
130 MHz
100
71
96
350 MHz
400 MHz
450 MHz
92
SFDR (dBc)
SNR (dBFS)
70
170 MHz
230 MHz
300 MHz
69
68
88
84
80
76
67
72
66
40
80
120
160 200 240 280
Input Frequency (MHz)
320
360
64
400
Figure 6-14. Signal-to-Noise Ratio vs Input
Frequency
1
1.5
2
2.5 3 3.5 4
Digital Gain (dB)
4.5
5
5.5
6
G013
130
75.5
40 MHz
100 MHz
130 MHz
73
72
71
70
170 MHz
230 MHz
300 MHz
350 MHz
400 MHz
450 MHz
SNR(dBFS)
SFDR(dBc)
SFDR(dBFS)
75
74.5
120
110
100
74
SNR (dBFS)
SNR (dBFS)
0.5
Figure 6-15. Spurious-Free Dynamic Range vs
Digital Gain
74
69
68
67
66
65
64
63
62
0
G012
0
0.5
1
1.5
2
2.5 3 3.5 4
Digital Gain (dB)
4.5
5
5.5
6
73.5
90
73
80
72.5
70
72
60
71.5
50
71
40
70.5
30
70
−70
−60
G014
Figure 6-16. Signal-to-Noise Ratio vs Digital Gain
−50
−40
−30
−20
Amplitude (dBFS)
−10
0
SFDR (dBc,dBFS)
65
68
20
Input Frequency = 70 MHz
Figure 6-17. Performance vs Input Amplitude
14
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ADS4449
74
94
72
110
73.5
92
71.5
100
73
90
71
88
70.5
86
70
84
69.5
90
72.5
80
72
70
71.5
60
71
50
70.5
SFDR (dBc)
SFDR (dBFS)
SNR
40
30
20
−50
−40
SFDR (dBc)
120
−10
0
69
78
0.7
68.5
68
1.3
0.9
1
1.1
1.2
Input Common−Mode Voltage (V)
G017
Input Frequency = 185 MHz
Figure 6-18. Performance vs Input Amplitude
Figure 6-19. Performance vs Input Common-Mode
Voltage
90
71
DRVDD = 1.7 V
DRVDD = 1.8 V
DRVDD = 1.9 V
DRVDD = 2 V
89
DRVDD = 1.7 V
DRVDD = 1.8 V
DRVDD = 1.9 V
DRVDD = 2 V
70.5
SNR (dBFS)
88
SFDR (dBc)
0.8
G016
Input Frequency = 185 MHz
87
86
85
70
69.5
69
68.5
84
83
−40
−15
10
35
Temperature (°C)
60
68
−40
85
−15
G018
Input Frequency = 185 MHz
10
35
Temperature (°C)
60
85
G019
Input Frequency = 185 MHz
Figure 6-20. Spurious-Free Dynamic Range vs
DRVDD Supply and Temperature
Figure 6-21. Signal-to-Noise Ratio vs DRVDD
Supply and Temperature
90
71
AVDD = 1.8 V
AVDD = 1.9 V
AVDD = 2 V
89
AVDD = 1.8 V
AVDD = 1.9 V
AVDD = 2 V
70.5
SNR (dBFS)
88
SFDR (dBc)
SFDR
SNR
80
69.5
−30
−20
Amplitude (dBFS)
69
82
70
SNR (dBFS)
SBAS603B – APRIL 2013 – REVISED NOVEMBER 2020
SNR (dBFS)
SFDR (dBc,dBFS)
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87
86
85
70
69.5
69
84
68.5
83
82
−40
−15
10
35
Temperature (°C)
60
85
68
−40
G020
Input Frequency = 185 MHz
−15
10
35
Temperature (°C)
60
85
G021
Input Frequency = 185 MHz
Figure 6-22. Spurious-Free Dynamic Range vs
AVDD Supply and Temperature
Figure 6-23. Signal-to-Noise Ratio vs AVDD Supply
and Temperature
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71
90
89
AVDD3V = 3.15 V
AVDD3V = 3.3 V
AVDD3V = 3.45 V
70.5
SNR (dBFS)
87
86
85
84
AVDD3V = 3.15 V
AVDD3V = 3.3 V
AVDD3V = 3.45 V
83
82
−40
−15
10
35
Temperature (°C)
60
70
69.5
69
68.5
68
−40
85
Input Frequency = 185 MHz
0.8
1.1
1.4
1.7
Differential Clock Amplitudes (Vpp)
2
92
72
SNR
THD
SNR (dBFS)
90
70.5
89
70
88
69.5
87
69
86
68.5
85
68
84
67.5
83
25
30
G024
35
40
45
50
55
60
Input Clock Duty Cycle (%)
65
70
75
82
G025
Input Frequency = 185 MHz
Figure 6-27. Performance vs Clock Duty Cycle
0
−20
Amplitude (dB)
CMRR (dB)
91
71
67
Figure 6-26. Performance vs Clock Amplitude
−40
−60
−80
−100
−120
0
50
100
150
200
250
Frequency of Input Common-Mode Signal (MHz)
G026
0
25
50
75
Frequency (MHz)
fIN = 185 MHz
300
Input Frequency = 185 MHz
100
125
G027
Amplitude (fIN – fCM) = –80.9 dBFS
Amplitude (fIN) = –1 dBFS
Amplitude (fCM) = –95 dBFS
fCM = 10 MHz, 50 mVPP
Amplitude (fIN + fCM) = –77.2 dBFS
SFDR = 76 dBc
50-mVPP Signal Superimposed on VCM
Figure 6-28. Common-Mode Rejection Ratio
Spectrum
16
85
G023
71.5
SNR (dBFS)
SFDR (dBc)
71
70.5
70
69.5
69
68.5
68
67.5
67
66.5
66
65.5
65
2.3
Input Frequency = 185 MHz
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
60
Figure 6-25. Signal-to-Noise Ratio vs AVDD3V
Supply and Temperature
SFDR
SNR
0.5
10
35
Temperature (°C)
Input Frequency = 185 MHz
Figure 6-24. Spurious-Free Dynamic Range vs
AVDD3V Supply and Temperature
100
98
96
94
92
90
88
86
84
82
80
78
76
0.2
−15
G022
THD (dBc)
SFDR (dBc)
88
Figure 6-29. Common-Mode Rejection Ratio vs
Test Signal Frequency
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0
−20
PSRR on AVDD Supply
PSRR on AVDD3V Supply
−25
−20
−30
Amplitude (dB)
PSRR (dB)
−35
−40
−45
−50
−40
−60
−80
−55
−100
−60
−65
−70
−120
0
50
100
150
200
250
Frequency of Signal on Supply (MHz)
0
10
300
G028
20
30
Frequency (MHz)
40
50
G029
Amplitude (fIN) = –1 dBFS
Amplitude (fPSRR) = –87 dBFS
Input Frequency = 10 MHz
fIN = 10 MHz
Amplitude (fIN + fPSRR) = –60.6 dBFS
50-mVPP Signal Superimposed on Supply
fPSRR = 2 MHz, 50 mVPP
Amplitude (fIN – fPSRR) = –60 dBFS
Figure 6-31. Power-Supply Rejection Ratio vs Test
Signal Frequency
1.6
800
1.4
700
Analog Power (mW)
Total Power (W)
Figure 6-30. Power-Supply Rejection Ratio
Spectrum for AVDD
1.2
1.0
0.8
0.6
0.4
0.2
AVDD Power
AVDD3V Power
DRVDD Power
600
500
400
300
200
100
1
26
51
76 101 126 151 176 201 226 250
Sampling Speed (MSPS)
G030
Input Frequency = 185 MHz
0
1
26
51
76 101 126 151 176 201 226 250
Sampling Speed (MSPS)
G031
Input Frequency = 185 MHz
Figure 6-32. Total Power vs Sampling Frequency
Figure 6-33. Power Breakup vs Sampling
Frequency
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6.10 Typical Characteristics: Contour
At 25°C, AVDD = 1.9 V, AVDD3V = 3.3 V, DRVDD = 1.8 V, rated sampling frequency, 0-dB gain, sine-wave input
clock,
1.5-V PP differential clock amplitude, 50% clock duty cycle, –1-dBFS differential analog input, DDR LVDS output
interface, and 32k-point FFT, unless otherwise noted.
250
250
83
Sampling Frequency, MSPS
87
230
91
83
95
200
91
80
75
87
87
190
87
50
87
100
70
150
75
80
220
400
85
88
86
84
82
79
76
90
90
88
50
100
95 74
76
150
82
200
250
300
350
Input Frequency, MHz
78
80
82
84
79
76
400
86
450
88
90
Figure 6-35. Spurious-Free Dynamic Range (6-dB
Gain)
250
69
68.5
68
67.5
66.5
67
64.5
66
240
Sampling Frequency, MSPS
70.2 69.8 69.4
240
Sampling Frequency, MSPS
84
200
Figure 6-34. Spurious-Free Dynamic Range (0-dB
Gain)
70.6
230
220
70.2
69.8
69.4 69 68.5
68
67.5
67
66.5
200
190
50
69.4 6968.568
69.8
70.2
100
66
150
67.5
67
66.5
200
250
300
350
Input Frequency, MHz
400
67
68
69
66
450
70
Figure 6-36. Signal-to-Noise Ratio (0-dB Gain)
64.1
63.7
63.3
64.9
230
62.5
62.9
64.7
65.5
220
64.5
64.1 63.7
66
210
18
86
210
450
250
76
90
70
70
200
250
300
350
Input Frequency, MHz
79
82
230
190
75
80
83
91
88 86 84
90
240
87
87
87
210
70
75
87
91
220
80
Sampling Frequency, MSPS
87
240
210
64.9
63.3
64.7
62.9
64.7
200
190
64.5
63.3
63.7
64.1
64.5
50
100
62.5
150
62.9
62.5
200
250
300
350
Input Frequency, MHz
63
63.5
64
400
450
64.5
Figure 6-37. Signal-to-Noise Ratio (6-dB Gain)
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7 Parameter Measurement Information
7.1 LVDS Output Timing
Figure 7-1 shows a timing diagram of the LVDS output voltage levels. Figure 7-2 shows the latency described in
the Section 6.7 table.
DxnP
Logic 0
VODL
Logic 1
VODH
DxnM
VOCM
GND
Figure 7-1. LVDS Output Voltage Levels
Input
Signal
N+3
N+2
N+1
Sample
N
N+4
N+12
N+11
N+10
tA
CLKINM
Input
Clock
CLKINP
CLKOUTABM
(CLKOUTCDM)
CLKOUTABP
(CLKOUTCDP)
10 Clock Cycles
DDR
LVDS
tPDI
Output Data
DABP, DABM
(DCDP, DCDM)
Ch B
Ch A
Ch B
Ch A
Ch B
Ch A
Ch B
Ch A
Ch B
Ch A
(Ch D) (Ch C) (Ch D) (Ch C) (Ch D) (Ch C) (Ch D) (Ch C) (Ch D) (Ch C)
N-10
N-9
N-8
N-7
Ch A
Ch B
Ch A
Ch B
Ch A
Ch B
Ch A
Ch B
Ch A
(Ch C) (Ch D) (Ch C) (Ch D) (Ch C) (Ch D) (Ch C) (Ch D) (Ch C)
N-1
N
N+1
Figure 7-2. Latency Timing
All 14 data bits of one channel are included in the digital output interface at the same time, as shown in Figure
7-3. Channel A and C data are output on the rising edge of the output clock while channels B and D are output
on the falling edge of the output clock.
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CLKOUTABM
CLKOUTABP
DAB[13:0]P,
DAB[13:0]M
DA[13:0]P,
DA[13:0]M
DB[13:0]P,
DB[13:0]M
Sample N
DA[13:0]P,
DA[13:0]M
DB[13:0]P,
DB[13:0]M
DA[13:0]P,
DA[13:0]M
Sample N + 1
DB[13:0]P,
DB[13:0]M
Sample N + 2
CLKOUTCDM
CLKOUTCDP
DCD[13:0]P,
DCD[13:0]M
DC[13:0]P,
DC[13:0]M
DD[13:0]P,
DD[13:0]M
Sample N
DC[13:0]P,
DC[13:0]M
DD[13:0]P,
DD[13:0]M
DC[13:0]P,
DC[13:0]M
Sample N + 1
DD[13:0]P,
DD[13:0]M
Sample N + 2
Figure 7-3. LVDS Output Interface Timing
20
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8 Detailed Description
8.1 Overview
The ADS4449 belong to TI’s low-power family of quad-channel, 14-bit, analog-to-digital converters (ADCs). High
performance is maintained while power is reduced for power-sensitive applications. In addition to its low power
and high performance, the ADS4449 has a number of digital features and operating modes to enable design
flexibility.
At every falling edge of the input clock, the analog input signal for each channel is sampled simultaneously. The
sampled signal in each channel is converted by a pipeline of low-resolution stages. In each stage, the sampledand-held signal is converted by a high-speed, low-resolution, flash sub-ADC. The difference (residue) between
the stage input and quantized equivalent is gained and propagates to the next stage. At every clock, each
subsequent stage resolves the sampled input with greater accuracy. The digital outputs from all stages are
combined in a digital correction logic block and are digitally processed to create the final code, after a data
latency of 10 clock cycles. The digital output is available in a double data rate (DDR) low-voltage differential
signaling (LVDS) interface and is coded in binary twos complement format.
The ADS4449 can be configured with a serial programming interface (SPI), as described in the Section 8.5.1
section. In addition, the device has control terminals that control power-down.
8.2 Functional Block Diagram
DAB0P, DAB0M or
OVRABP, OVRABM
14-Bit
ADC
AINP,
AINM
14
Digital
Block
CLKOUTABP,
CLKOUTABM
14-Bit
ADC
BINP,
BINM
DAB[13:1]P,
DAB[13:1]M
Output
Formatter
CLKINP,
CLKINM
DDR
LVDS
14-Bit
ADC
CINP,
CINM
DCD0P, DCD0M or
OVRCDP, OVRCDM
Digital
Block
14-Bit
ADC
DINP,
DINM
VCM
14
DCD[13:1]P,
DCD[13:1]M
CLKOUTCDP,
CLKOUTCDM
Common
Mode
PDN
SDATA
SDOUT
SEN
SCLK
RESET
Configuration Registers
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8.3 Feature Description
8.3.1 Overrange Indication (OVRxx)
After reset, all serial interface register "ALWAYS WRITE 1". Bits must be set to 1. Afterwards, 13-bit data are
output on the Dxx13P, Dxx13M to Dxx1P, Dxx1M terminals and overrange information is output on the Dxx0P
and Dxx0M terminals (where xx = channels A and B or channels C and D).
When the DIS OVR ON LSB bit is set to 1, 14-bit data are output on the Dxx13P, Dxx13M to Dxx0P, Dxx0M
terminals without overrange information on the LSB bits.
The OVR timing diagram (13-bit data with OVR) is shown in Figure 8-1. In 14-bit mode, OVR is disabled by
setting the DIS OVR ON LSB bit to 1, as shown in Figure 8-2.
CLKOUTM
CLKOUTP
DA[13:1]P, DA[13:1]M
DB[13:1]P, DB[13:1]M
DAB0P, DAB0M
DA[13:1]P,
DA[13:1]M
DB[13:1]P,
DB[13:1]M
OVR A
OVR B
Sample N
DA[13:1]P,
DA[13:1]M
DB[13:1]P,
DB[13:1]M
OVR A
OVR B
13-Bit Output
Overrange Indicator
Sample N+1
Figure 8-1. 13-Bit Data with OVR (Register Bits ALWAYS WRITE 1 = 1 and DIS OVR ON LSB = 0)
CLKOUTM
CLKOUTP
DA[13:0]P, DA[13:0]M
DB[13:0]P, DB[13:0]M
DA[13:0]P,
DA[13:0]M
Sample N
DB[13:0]P,
DB[13:0]M
DA[13:0]P,
DA[13:0]M
DB[13:0]P,
DB[13:0]M
14-Bit Output
Sample N+1
Figure 8-2. 14-Bit Mode (Register Bits ALWAYS WRITE 1 = 1 and DIS OVR ON LSB = 1)
Normal overrange indication (OVR) shows the event of the device digital output being saturated when the input
signal exceeds the ADC full-scale range. Normal OVR has the same latency as digital output data. However, an
overrange event can be indicated earlier (than normal latency) by using the fast OVR mode. The fast OVR mode
(enabled by default) is triggered seven clock cycles after the overrange condition that occurred at the ADC input.
The fast OVR thresholds are programmable with the FAST OVR THRESH PROG bits (refer to Table 8-3, register
address C3h). At any time, either normal or fast OVR mode can be programmed on the Dxx0P and Dxx0M
terminals.
22
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8.3.2 Gain for SFDR and SNR Trade-Off
The device includes gain settings that can be used to obtain improved SFDR performance. The gain is
programmable from 0 dB to 6 dB (in 0.5-dB steps) using the DIGITAL GAIN CH X register bits. For each gain
setting, the analog input full-scale range scales proportionally, as shown in Table 8-1.
Table 8-1. Full-Scale Range Across Gains
GAIN (dB)
TYPE
FULL-SCALE (VPP)
0
Default after reset
2
0.5
Fine, programmable
1.89
1
Fine, programmable
1.78
1.5
Fine, programmable
1.68
2
Fine, programmable
1.59
2.5
Fine, programmable
1.5
3
Fine, programmable
1.42
3.5
Fine, programmable
1.34
4
Fine, programmable
1.26
4.5
Fine, programmable
1.19
5
Fine, programmable
1.12
5.5
Fine, programmable
1.06
6
Fine, programmable
1
SFDR improvement is achieved at the expense of SNR; for each gain setting, SNR degrades by approximately
0.5 dB to 1 dB. SNR degradation is diminished at high input frequencies. As a result, fine gain is very useful at
high input frequencies because SFDR improvement is significant with marginal degradation in SNR. Therefore,
fine gain can be used to trade-off between SFDR and SNR.
After a reset, the gain function is disabled. To use fine gain:
• First, program the DIGITAL ENABLE bits to enable digital functions.
• This setting enables the gain for all four channels and places the device in a 0-dB gain mode.
• For other gain settings, program the DIGITAL GAIN CH X register bits.
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8.4 Device Functional Modes
8.4.1 Special Performance Modes
Best performance can be achieved by writing certain modes depending upon source impedance, band of
operation and sampling speed. Table 8-2 summarizes the different these modes.
Table 8-2. High-Performance Modes Summary
SPECIAL MODES SUMMARY(1)
SPECIAL MODE NAME
ADDRESS (Hex)
DATA (Hex)
INPUT FREQUENCIES
(Up to 125 MHz)
INPUT FREQUENCIES
(> 125 MHz)
High-frequency mode
F1
20
Not required
Must
58
20
Optional
Optional
70
20
Optional
Optional
88
20
Optional
Optional
A0
20
Optional
Optional
ADDRESS (Hex)
DATA (Hex)
SAMPLING RATE (Up to
200 MSPS)
SAMPLING RATE
(>200MHz)
4A
1
Must
Not required
High SNR mode(2)
SPECIAL MODE NAME
Low Sampling Rate mode
(1)
(2)
62
1
Must
Not required
7A
1
Must
Not required
92
1
Must
Not required
See the Section 8.5.1 section for details.
High SNR mode improves SNR typically by 1 dB at 170 MHz input frequency. See the Section 8.4.3 section.
8.4.2 Digital Output Information
The device provides 14-bit digital data for each channel and two output clocks in LVDS mode. Output terminals
are shared by a pair of channels that are accompanied by one dedicated output clock.
8.4.2.1 DDR LVDS Outputs
In the LVDS interface mode, the data bits and clock are output using LVDS levels. The data bits of two channels
are multiplexed and output on each LVDS differential pair of terminals; see Figure 8-3 and Figure 8-4.
24
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CLKOUTxxP,
CLKOUTxxM
Dxx0P,
Dxx0M
Dxx1P,
Dxx1M
Dxx2P,
Dxx2M
14-Bit Output
Dxx12P,
Dxx12M
Dxx13P,
Dxx13M
Device
NOTE: xx = channels A and B or C and D.
Figure 8-3. DDR LVDS Interface
CLKOUTABM
CLKOUTABP
DAB[13:0]P,
DAB[13:0]M
DA[13:0]P,
DA[13:0]M
DB[13:0]P,
DB[13:0]M
Sample N
DA[13:0]P,
DA[13:0]M
DB[13:0]P,
DB[13:0]M
DA[13:0]P,
DA[13:0]M
Sample N + 1
DB[13:0]P,
DB[13:0]M
Sample N + 2
CLKOUTCDM
CLKOUTCDP
DCD[13:0]P,
DCD[13:0]M
DC[13:0]P,
DC[13:0]M
DD[13:0]P,
DD[13:0]M
Sample N
DC[13:0]P,
DC[13:0]M
DD[13:0]P,
DD[13:0]M
DC[13:0]P,
DC[13:0]M
Sample N + 1
DD[13:0]P,
DD[13:0]M
Sample N + 2
Figure 8-4. DDR LVDS Interface Timing Diagram
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8.4.2.1.1 LVDS Output Data and Clock Buffers
The equivalent circuit of each LVDS output buffer is shown in Figure 8-5. After reset, the buffer presents an
output impedance of 100 Ω to match with the external 100-Ω termination.
The VDIFF voltage is nominally 350 mV, resulting in an output swing of ±350 mV with 100-Ω external termination.
The V DIFF voltage is programmable using the LVDS SWING register bits (refer to Table 8-3, register address
01h). The buffer output impedance behaves similar to a source-side series termination. By absorbing reflections
from the receiver end, the source-side termination helps improve signal integrity.
VDIFF(high)
High
Low
OUTP
External
100-W Load
OUTM
1.1 V
ROUT
VDIFF(low)
High
Low
Figure 8-5. LVDS Buffer Equivalent Circuit
8.4.2.1.2 Output Data Format
The device transmits data in binary twos complement format. In the event of an input voltage overdrive, the
digital outputs go to the appropriate full-scale level. For a positive overdrive, the output code is 3FFh. For a
negative input overdrive, the output code is 400h.
8.4.3 Using High SNR Mode Register Settings
0
0
−20
−20
Amplitude (dBFS)
Amplitude (dBFS)
The HIGH SNR MODE register settings can be used to further improve the SNR. However, there is a trade off
between improved SNR and degraded THD when these settings are used. These settings shut down the internal
spectrum-cleaning algorithm, resulting in THD performance degradation. Figure 8-6 and Figure 8-7 show the
effect of using HIGH SNR MODE. SNR improves by approximately 1 dB and THD degrades by 3 dB.
−40
−60
−80
−100
−120
−60
−80
−100
0
25
50
75
Frequency (MHz)
fIN = 170 MHz
SFDR = 93 dBc
SINAD = 69 dBFS
THD = 89 dBc
100
125
−120
0
G036
SNR = 69.1 dBFS
Figure 8-6. FFT (Default) at 170 MHz
26
−40
25
50
75
Frequency (MHz)
fIN = 170 MHz
SFDR = 89 dBc
SINAD = 70 dBFS
THD = 86 dBc
100
125
G037
SNR = 70.1 dBFS
Figure 8-7. FFT with High SNR Mode at 170 MHz
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Figure 8-8 shows SNR versus input frequency with and without these settings.
72
Default
HIGH SNR MODE Enable
71
SNR (dBFS)
70
69
68
67
66
65
64
40
90
140
190 240 290 340
Input Frequency (MHz)
390
440
490
G038
Figure 8-8. SNR vs Input Frequency with High SNR Mode
To obtain best performance, TI recommends keeping termination impedance between INP and INM low (for
instance, at 50 Ω differential). This setting helps absorb the kickback noise component of the spectrum-cleaning
algorithm. However, when higher termination impedances (such as 100 Ω) are required, shutting down the
spectrum-cleaning algorithm by using the HIGH SNR MODE register settings can be helpful.
8.4.4 Input Common Mode
To ensure a low-noise, common-mode reference, the VCM terminal should be filtered with a 0.1-µF, lowinductance capacitor connected to ground. The VCM terminal is designed to directly bias the ADC inputs (refer
to Figure 9-4 to Figure 9-7).
Each ADC input terminal sinks a common-mode current of approximately 1.5 µA per MSPS of clock frequency.
When a differential amplifier is used to drive the ADC (with dc-coupling), ensure that the output common-mode
of the amplifier is within the acceptable input common-mode range of the ADC inputs (VCM ± 25 mV).
8.5 Programming
8.5.1 Serial Interface
The device has a set of internal registers that can be accessed by the serial interface formed by the SEN (serial
interface enable), SCLK (serial interface clock), SDATA (serial interface input data), and SDOUT (serial interface
readback data) terminals. Serially shifting bits into the device is enabled when SEN is low. Serial data (SDATA)
are latched at every SCLK falling edge when SEN is active (low). Serial data are loaded into the register at every
16th SCLK falling edge when SEN is low. When the word length exceeds a multiple of 16 bits, the excess bits
are ignored. Data can be loaded in multiples of 16-bit words within a single active SEN pulse. The first eight bits
form the register address and the remaining eight bits are the register data. The interface can function with
SCLK frequencies from 20 MHz down to very low speeds (of a few hertz) and also with a non-50% SCLK duty
cycle.
8.5.1.1 Register Initialization
After power-up, the internal registers must be initialized to the default values. This initialization can be
accomplished in one of two ways:
1. Either through a hardware reset by applying a high pulse on the RESET terminal (of widths greater than
10ns), as shown in Figure 6-1; or
2. By applying a software reset. When using the serial interface, set the RESET bit (D1 in register 00h) high.
This setting initializes the internal registers to the default values and then self-resets the RESET bit low. In
this case, the RESET terminal is kept low.
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8.5.1.2 Serial Register Readout
The device includes a mode where the contents of the internal registers can be read back, as shown in Figure
8-9. This readback mode can be useful as a diagnostic check to verify the serial interface communication
between the external controller and ADC.
1. Set the READOUT register bit to 1. This setting disables any further writes to the registers except register
address 00h.
2. Initiate a serial interface cycle specifying the address of the register (A[7:0]) whose content must be read.
3. The device outputs the contents (D[7:0]) of the selected register on the SDOUT terminal (terminal G10).
4. The external controller can latch the contents at the SCLK falling edge.
5. To enable register writes, reset the READOUT register bit to 0.
Note that the contents of register 00h cannot be read back because the register contains RESET and READOUT
bits. When the READOUT bit is disabled, the SDOUT terminal is in a high-impedance state. If serial readout is
not used, the SDOUT terminal must not be connected (must float).
Register Address A[7:0] = 00h
SDATA
A7
A6
A5
A4
A3
A2
Register Data D[7:0] = 01h
A1
A0
D7
D6
D5
D4
D3
D2
D1
D0
SCLK
SEN
The SDOUT pin is in a high-impedance state (READOUT = 0).
SDOUT
a) Enable serial readout (READOUT = 1)
Register Address A[7:0] = 45h
SDATA
A7
A6
A5
A4
A3
A2
Register Data D[7:0] = XX (don’t care)
A1
A0
D7
D6
D5
D4
D3
D2
D1
D0
0
0
0
0
0
1
0
0
SCLK
SEN
SDOUT
The SDOUT pin functions as a serial readout (READOUT = 1).
b) Read contents of Register 45h. This register is initialized with 04h.
Figure 8-9. Serial Readout Timing Diagram
SDOUT comes out at the SCLK rising edge with an approximate delay (t SD_DELAY) of 8 ns, as shown in Figure
8-10.
SCLK
tSD_DELAY
SDOUT
Figure 8-10. Sdout Delay Timing
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8.6 Register Maps
Table 8-3 summarizes the device registers.
Table 8-3. Register Map
REGISTER DATA
REGISTER ADDRESS
A[7:0] (Hex)
D7
D6
D5
D4
D3
D2
D1
D0
00
0
0
0
0
0
0
RESET
READOUT
0
0
01
LVDS SWING
25
DIGITAL GAIN CH B
DIGITAL GAIN BYPASS
CH B
2B
DIGITAL GAIN CH A
DIGITAL GAIN BYPASS
CH A
TEST PATTERN CH A
31
DIGITAL GAIN CH D
DIGITAL GAIN BYPASS
CH D
TEST PATTERN CH D
37
DIGITAL GAIN CH C
DIGITAL GAIN BYPASS
CH C
TEST PATTERN CH C
3D
0
0
3F
0
0
OFFSET CORR EN1
0
0
42
0
0
0
0
45
0
0
0
DIS OVR ON LSB
4A
0
0
0
62
0
0
0
7A
0
0
TEST PATTERN CH B
0
0
0
DIGITAL ENABLE
0
0
0
SEL OVR
GLOBAL POWER DOWN
0
CONFIG PDN PIN
0
0
0
0
LSR MODE CH A
0
0
0
0
LSR MODE CH B
0
0
0
0
0
LSR MODE CH D
0
0
0
LSR MODE CH C
CUSTOM PATTERN[13:8]
40
CUSTOM PATTERN[7:0]
92
0
0
0
0
A9
0
0
0
0
AC
0
CLOCKOUT DELAY PROG CH AB
CLOCKOUT DELAY PROG CH CD
0
0
ALWAYS WRITE 1
FAST OVR THRESH PROG
C3
C4
EN FAST OVR THRESH
0
0
0
0
0
0
0
CF
0
0
0
0
OFFSET CORR EN2
0
0
0
D6
ALWAYS WRITE 1
0
0
0
0
0
0
0
D7
0
0
0
0
ALWAYS WRITE 1
ALWAYS WRITE 1
0
0
F1
0
0
HIGH FREQ MODE
0
0
58
0
0
HIGH SNR MODE CH A
0
0
0
0
0
59
ALWAYS WRITE 1
0
0
0
0
0
0
0
70
0
0
HIGH SNR MODE CH B
0
0
0
0
0
71
ALWAYS WRITE 1
0
0
0
0
0
0
0
88
0
0
HIGH SNR MODE CH D
0
0
0
0
0
89
ALWAYS WRITE 1
0
0
0
0
0
0
0
A0
0
0
HIGH SNR MODE CH C
0
0
0
0
0
A1
ALWAYS WRITE 1
0
0
0
0
0
0
0
FE
0
0
0
0
PDN CH D
PDN CH C
PDN CH A
PDN CH B
ENABLE LVDS SWING PROG
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8.6.1 Register Description
8.6.1.1 Register Address 00h (Default = 00h)
7
6
5
4
3
2
1
0
0
0
0
0
0
0
RESET
READOUT
Bits 7-2
Always write 0
Bit 1
RESET: Software reset applied
This bit resets all internal registers to the default values and self-clears to 0.
Bit 0
READOUT: Serial readout
This bit sets the serial readout of the registers.
0 = Serial readout of registers disabled; the SDOUT terminal is placed in a high-impedance state. (default)
1 = Serial readout enabled; the SDOUT terminal functions as a serial data readout with CMOS logic levels
running from the DRVDD supply.
8.6.1.2 Register Address 01h (Default = 00h)
7
6
5
4
3
LVDS SWING
Bits 7-2
2
1
0
0
0
LVDS SWING: LVDS swing programmability
These bits program the LVDS swing only after the ENABLE LVDS SWING PROG bits are set to 11.
000000 = Default LVDS swing; ±350 mV with an external 100-Ω termination (default)
011011 = ±420-mV LVDS swing with an external 100-Ω termination
110010 = ±470-mV LVDS swing with an external 100-Ω termination
010100 = ±560-mV LVDS swing with an external 100-Ω termination
001111 = ±160-mV LVDS swing with an external 100-Ω termination
Bits 1-0
30
Always write 0
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8.6.1.3 Register Address 25h (Default = 00h)
7
6
5
4
DIGITAL GAIN
BYPASS CH B
DIGITAL GAIN CH B
Bits 7-4
3
2
1
0
TEST PATTERN CH B
DIGITAL GAIN CH B: Channel B digital gain programmability
These bits set the digital gain programmability from 0 dB to 6 dB in 0.5-dB steps for channel B. Set the DIGITAL
ENABLE bit to 1 beforehand to enable this feature.
0000 = 0-dB gain (default)
0001 = 0.5-dB gain
0010 = 1-dB gain
0011 = 1.5-dB gain
0100 = 2-dB gain
0101 = 2.5-dB gain
0110 = 3-dB gain
0111 = 3.5-dB gain
1000 = 4-dB gain
1001 = 4.5-dB gain
1010 = 5-dB gain
1011 = 5.5-dB gain
1100 = 6-dB gain
Bit 3
DIGITAL GAIN BYPASS CH B: Channel B digital gain bypass
0 = Normal operation (default)
1 = Digital gain feature for channel B is bypassed
Bits 2-0
TEST PATTERN CH B: Channel B test pattern programmability
These bits program the test pattern for channel B.
000 = Normal operation (default)
001 = Outputs all 0s
010 = Outputs all 1s
011 = Outputs toggle pattern
Output data ([D:0]) are an alternating sequence of 01010101010101 and 10101010101010.
100 = Outputs digital ramp
Output data increments by one 14-bit LSB every clock cycle from code 0 to code 16383
101 = Outputs custom pattern
To program a test pattern, use the CUSTOM PATTERN D[13:0] bits of registers 3Fh and 40h.
110 = Unused
111 = Unused
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8.6.1.4 Register Address 2bh (Default = 00h)
7
6
5
4
DIGITAL GAIN
BYPASS CH A
DIGITAL GAIN CH A
Bits 7-4
3
2
1
0
TEST PATTERN CH A
DIGITAL GAIN CH A: Channel A digital gain programmability
These bits set the digital gain programmability from 0 dB to 6 dB in 0.5-dB steps for channel A. Set the DIGITAL
ENABLE bit to 1 beforehand to enable this feature.
0000 = 0-dB gain (default)
0001 = 0.5-dB gain
0010 = 1-dB gain
0011 = 1.5-dB gain
0100 = 2-dB gain
0101 = 2.5-dB gain
0110 = 3-dB gain
0111 = 3.5-dB gain
1000 = 4-dB gain
1001 = 4.5-dB gain
1010 = 5-dB gain
1011 = 5.5-dB gain
1100 = 6-dB gain
Bit 3
DIGITAL GAIN BYPASS CH A: Channel A digital gain bypass
0 = Normal operation (default)
1 = Digital gain feature for channel A is bypassed
Bits 2-0
TEST PATTERN CH A: Channel A test pattern programmability
These bits program the test pattern for channel A.
000 = Normal operation (default)
001 = Outputs all 0s
010 = Outputs all 1s
011 = Outputs toggle pattern
Output data ([D:0]) are an alternating sequence of 01010101010101 and 10101010101010.
100 = Outputs digital ramp
Output data increments by one 14-bit LSB every clock cycle from code 0 to code 16383
101 = Outputs custom pattern
To program a test pattern, use the CUSTOM PATTERN D[13:0] bits of registers 3Fh and 40h.
110 = Unused
111 = Unused
32
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8.6.1.5 Register Address 31h (Default = 00h)
7
6
5
4
DIGITAL GAIN
BYPASS CH D
DIGITAL GAIN CH D
Bits 7-4
3
2
1
0
TEST PATTERN CH D
DIGITAL GAIN CH D: Channel D digital gain programmability
These bits set the digital gain programmability from 0 dB to 6 dB in 0.5-dB steps for channel D. Set the
DIGITAL ENABLE bit to 1 beforehand to enable this feature.
0000 = 0-dB gain (default)
0001 = 0.5-dB gain
0010 = 1-dB gain
0011 = 1.5-dB gain
0100 = 2-dB gain
0101 = 2.5-dB gain
0110 = 3-dB gain
0111 = 3.5-dB gain
1000 = 4-dB gain
1001 = 4.5-dB gain
1010 = 5-dB gain
1011 = 5.5-dB gain
1100 = 6-dB gain
Bit 3
DIGITAL GAIN BYPASS CH D: Channel D digital gain bypass
0 = Normal operation (default)
1 = Digital gain feature for channel A is bypassed
Bits 2-0
TEST PATTERN CH D: Channel D test pattern programmability
These bits program the test pattern for channel D.
000 = Normal operation (default)
001 = Outputs all 0s
010 = Outputs all 1s
011 = Outputs toggle pattern
Output data ([D:0]) are an alternating sequence of 01010101010101 and 10101010101010.
100 = Outputs digital ramp
Output data increments by one 14-bit LSB every clock cycle from code 0 to code 16383
101 = Outputs custom pattern
To program test pattern, use the CUSTOM PATTERN D[13:0] bits of registers 3Fh and 40h.
110 = Unused
111 = Unused
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8.6.1.6 Register Address 37h (Default = 00h)
7
6
5
4
DIGITAL GAIN
BYPASS CH C
DIGITAL GAIN CH C
Bits 7-4
3
2
1
0
TEST PATTERN CH C
DIGITAL GAIN CH C: Channel C digital gain programmability
These bits set the digital gain programmability from 0 dB to 6 dB in 0.5-dB steps for channel C. Set the
DIGITAL ENABLE bit to 1 beforehand to enable this feature.
0000 = 0-dB gain (default)
0001 = 0.5-dB gain
0010 = 1-dB gain
0011 = 1.5-dB gain
0100 = 2-dB gain
0101 = 2.5-dB gain
0110 = 3-dB gain
0111 = 3.5-dB gain
1000 = 4-dB gain
1001 = 4.5-dB gain
1010 = 5-dB gain
1011 = 5.5-dB gain
1100 = 6-dB gain
Bit 3
DIGITAL GAIN BYPASS CH C: Channel C digital gain bypass
0 = Normal operation (default)
1 = Digital gain feature for channel A is bypassed
Bits 2-0
TEST PATTERN CH C: Channel C test pattern programmability
These bits program the test pattern for channel C.
000 = Normal operation (default)
001 = Outputs all 0s
010 = Outputs all 1s
011 = Outputs toggle pattern
Output data ([D:0]) are an alternating sequence of 01010101010101 and 10101010101010.
100 = Outputs digital ramp
Output data increments by one 14-bit LSB every clock cycle from code 0 to code 16383
101 = Outputs custom pattern
To program a test pattern, use the CUSTOM PATTERN D[13:0] bits of registers 3Fh and 40h.
110 = Unused
111 = Unused
34
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8.6.1.7 Register Address 3dh (Default = 00h)
7
6
5
4
3
2
1
0
0
0
OFFSET CORR
EN1
0
0
0
0
0
Bits 7-6
Always write 0
Bit 5
OFFSET CORR EN1: Offset correction setting
This bit enables the offset correction feature for all four channels after the DIGITAL ENABLE bit is set to ‘1,’
correcting mid-code to 8191. In addition, write the OFFSET CORR EN2 bit (register CFh, value 08h) for proper
operation of the offset correction feature.
0 = Offset correction disabled (default)
1 = Offset correction enabled
Bits 4-0
Always write 0
8.6.1.8 Register Address 3fh (Default = 00h)
7
6
5
4
3
2
1
0
0
0
CUSTOM
PATTERN D13
CUSTOM
PATTERN D12
CUSTOM
PATTERN D11
CUSTOM
PATTERN D10
CUSTOM
PATTERN D9
CUSTOM
PATTERN D8
Bits 7-6
Always write 0
Bits 5-0
CUSTOM PATTERN D[13:8]
Set the custom pattern using these bits for all four channels.
8.6.1.9 Register Address 40h (Default = 00h)
7
6
5
4
3
2
1
0
CUSTOM
PATTERN D7
CUSTOM
PATTERN D6
CUSTOM
PATTERN D5
CUSTOM
PATTERN D4
CUSTOM
PATTERN D3
CUSTOM
PATTERN D2
CUSTOM
PATTERN D1
CUSTOM
PATTERN D0
Bits 7-0
CUSTOM PATTERN D[7:0]
Set the custom pattern using these bits for all four channels.
8.6.1.10 Register Address 42h (Default = 00h)
7
0
6
5
0
0
Bits 7-4
Always write 0
Bit 3
DIGITAL ENABLE
4
3
2
1
0
0
DIGITAL
ENABLE
0
0
0
1 = Digital gain and offset correction features disabled
1 = Digital gain and offset correction features enabled
Bits 2-0
Always write 0
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8.6.1.11 Register Address 45h (Default = 00h)
7
6
5
4
3
2
1
0
0
0
0
DIS OVR ON
LSB
SEL OVR
GLOBAL
POWER DOWN
0
CONFIG PDN
PIN
Bits 7-5
Always write 0
Bit 4
DIS OVR ON LSB
0 = Effective ADC resolution is 13 bits (the LSB of a 14-bit output is OVR) (default)
1 = ADC resolution is 14 bits
Bit 3
SEL OVR: OVR selection
0 = Fast OVR selected (default)
1 = Normal OVR selected. See the Section 8.3.1 section for details.
Bit 2
GLOBAL POWER DOWN
0 = Normal operation (default)
1 = Global power down. All ADC channels, internal references, and output buffers are powered down. Wakeup
time from this mode is slow (100 µs).
Bit 1
Always write 0
Bit 0
CONFIG PDN PIN
Use this bit to configure PDN terminal.
0 = The PDN terminal functions as a standby terminal. All channels are put in standby. Wake-up time from
standby mode is fast (10 µs). (default)
1 = The PDN terminal functions as a global power-down terminal. All ADC channels, internal references, and
output buffers are powered down. Wake-up time from global power mode is slow (100 µs).
8.6.1.12 Register Address 4ah (Defalut = 00h)
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
LSR CH A
Bits 7-1
Always write 0
Bit 0
LSR CH A
Use this bit to put Channel A into Low Sampling Rate Mode when sampling at a rate below 200MSPS.
8.6.1.13 Register Address 62h (Default = 00h)
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
LSR CH B
Bits 7-1
Always write 0
Bit 0
LSR CH B: Enables Low Sampling Rate Mode for channel B
Use this bit to put Channel B into Low Sampling Rate Mode when sampling at a rate below 200MSPS.
8.6.1.14 Register Address 7ah (Default = 00h)
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
LSR CH D
Bits 7-1
Always write 0
Bit 0
LSR CH D: Enables Low Sampling Rate Mode for channel D
Use this bit to put Channel D into Low Sampling Rate Mode when sampling at a rate below 200MSPS.
36
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8.6.1.15 Register Address 92h (Default = 00h)
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
LSR CH C
Bits 7-1
Always write 0
Bit 0
LSR CH C: Enables Low Sampling Rate Mode for channel C
Use this bit to put Channel C into Low Sampling Rate Mode when sampling at a rate below 200MSPS.
8.6.1.16 Register Address A9h (Default = 00h)
7
6
5
4
0
0
0
0
Bits 7-4
Always write 0
Bits 3-0
CLOCKOUT DELAY PROG CH AB
3
2
1
0
CLOCKOUT DELAY PROG CH AB
These bits program the clock out delay for channels A and B, see Table 8-4.
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8.6.1.17 Register Address Ach (Default = 00h)
7
6
5
0
4
3
CLOCKOUT DELAY PROG CH CD
Bit 7
Always write 0
Bits 6-4
CLOCKOUT DELAY PROG CH CD
2
1
0
0
0
ALWAYS
WRITE 1
These bits program the clock out delay for channels C and D, as shown in Table 8-4 .
Bits 2-1
Always write 0
Bit 0
Always write 1
This bit is set to 0 by default. User must set it to 1 after reset or power-up.
Table 8-4. Clockout Delay Programmability For All Channels
CLOCKOUT DELAY PROG CHxx
DELAY (ps)
0000 (default)
0 (default)
0001
–30
0010
70
0011
30
0100
–150
0101
–180
0110
–70
0111
–110
1000
270
1001
230
1010
340
1011
300
1100
140
1101
110
1110
200
1111
170
8.6.1.18 Register Address C3h (Default = 00h)
7
6
5
4
3
2
1
0
FAST OVR THRESH PROG
Bits 7-0
FAST OVR THRESH PROG
The device has a fast OVR mode that indicates an overload condition at the ADC input. The input voltage level
at which the overload is detected is referred to as the threshold and is programmable using the FAST OVR
THRESH PROG bits.
FAST OVR is triggered seven output clock cycles after the overload condition occurs. To enable the FAST OVR
programmability, enable the EN FAST OVR THRESH register bit. The threshold at which fast OVR is triggered
is (full-scale × [the decimal value of the FAST OVR THRESH PROG bits] / 255).
After reset, when EN FAST OVR THRESH PROG is set, the default value of the FAST OVR THRESH PROG
bits is 230 (decimal).
38
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8.6.1.19 Register Address C4h (Default = 00h)
7
6
5
4
3
2
1
0
EN FAST OVR
THRESH
0
0
0
0
0
0
0
Bit 7
EN FAST OVR THRESH
This bit enables the device to be programmed to select the fast OVR threshold.
Bits 6-0
Always write 0
8.6.1.20 Register Address Cfh (Default = 00h)
7
6
5
4
3
2
1
0
0
0
0
0
OFFSET CORR
EN2
0
0
0
Bits 7-4
Always write 0
Bit 3
OFFSET CORR EN2
This bit must be set to ‘1’ when the OFFSET CORR EN1 bit is selected.
Bits 2-0
Always write 0
8.6.1.21 Register Address D6h (Default = 00h)
7
6
5
4
3
2
1
0
ALWAYS
WRITE 1
0
0
0
0
0
0
0
Bits 7
Always write 1
This bit is set to 0 by default. User must set it to 1 after reset or power-up.
Bits 6-0
Always write 0
8.6.1.22 Register Address D7h (Default = 00h)
7
6
5
4
3
2
1
0
0
0
0
0
ALWAYS
WRITE 1
ALWAYS
WRITE 1
0
0
Bits 7-4
Always write 0
Bits 3-2
Always write 1
This bit is set to 0 by default. User must set it to 1 after reset or power-up.
Bits 1-0
Always write 0
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8.6.1.23 Register Address F1h (Default = 00h)
7
6
5
4
3
0
0
HIGH FREQ
MODE
0
0
Bits 7-6
Always write 0
Bit 5
HIGH FREQ MODE
2
1
0
ENABLE LVDS SWING PROG
0 = Default (default)
1 = Use for input frequencies > 125 MHz
Bits 4-3
Always write 0
Bits 2-0
ENABLE LVDS SWING PROG
This bit enables the LVDS swing control with the LVDS SWING bits.
00 = LVDS swing control disabled (default)
01 = Do not use
10 = Do not use
11 = LVDS swing control enabled
8.6.1.24 Register Address 58h (Default = 00h)
7
0
6
5
4
3
2
1
0
0
HIGH SNR
MODE CH A
0
0
0
0
0
Bits 7-6
Always write 0
Bit 5
HIGH SNR MODE CH A
See the Section 8.4.3 section.
Bits 4-0
Always write 0
8.6.1.25 Register Address 59h (Default = 00h)
7
6
5
4
3
2
1
0
ALWAYS
WRITE 1
0
0
0
0
0
0
0
Bits 7
Always write 1
This bit is set to 0 by default. User must set it to 1 after reset or power-up.
Bits 6-0
40
Always write 0
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8.6.1.26 Register Address 70h (Default = 00h)
7
6
5
4
3
2
1
0
0
0
HIGH SNR
MODE CH B
0
0
0
0
0
Bits 7-6
Always write 0
Bit 5
HIGH SNR MODE CH B
See the Section 8.4.3 section.
Bits 4-0
Always write 0
8.6.1.27 Register Address 71h (Default = 00h)
7
6
5
4
3
2
1
0
ALWAYS
WRITE 1
0
0
0
0
0
0
0
Bits 7
Always write 1
This bit is set to 0 by default. User must set it to 1 after reset or power-up.
Bits 6-0
Always write 0
8.6.1.28 Register Address 88h (Default = 00h)
7
6
5
4
3
2
1
0
0
0
HIGH SNR
MODE CH D
0
0
0
0
0
Bits 7-6
Always write 0
Bit 5
HIGH SNR MODE CH D
See the Section 8.4.3 section.
Bits 4-0
Always write 0
8.6.1.29 Register Address 89h (Default = 00h)
7
6
5
4
3
2
1
0
ALWAYS
WRITE 1
0
0
0
0
0
0
0
Bits 7
Always write 1
This bit is set to 0 by default. User must set it to 1 after reset or power-up.
Bits 6-0
Always write 0
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8.6.1.30 Register Address A0h (Default = 00h)
7
6
5
4
3
2
1
0
0
0
HIGH SNR
MODE CH C
0
0
0
0
0
Bits 7-6
Always write 0
Bit 5
HIGH SNR MODE CH C
See the Section 8.4.3 section.
Bits 4-0
Always write 0
8.6.1.31 Register Address A1h (Default = 00h)
7
6
5
4
3
2
1
0
ALWAYS
WRITE 1
0
0
0
0
0
0
0
Bits 7
Always write 1
This bit is set to 0 by default. User must set it to 1 after reset or power-up.
Bits 6-0
Always write 0
8.6.1.32 Register Address Feh (Default = 00h)
7
6
5
4
3
2
1
0
0
0
0
0
PDN CH D
PDN CH C
PDN CH A
PDN CH B
Bits 7-4
Always write 0
Bit 3
PDN CH D: Power-down channel D
Channel D is powered down.
Bit 2
PDN CH C: Power-down channel C
Channel C is powered down.
Bit 1
PDN CH B: Power-down channel B
Channel B is powered down.
Bit 0
PDN CH A: Power-down channel A
Channel A is powered down.
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
9.1 Application Information
Typical applications involving transformer-coupled circuits are discussed in this section. Transformers (such as
ADT1-1WT or WBC1-1) can be used up to 250 MHz to achieve good phase and amplitude balances at ADC
inputs. While designing the dc driving circuits, the ADC input impedance must be considered. Figure 9-1 shows
that ADC input impedance is represented by parallel combination of resistance and capacitance.
XINP(1)
RIN
ZIN(2)
CIN
XINM(1)
A. X = A, B, C, or D.
B. ZIN = RIN || (1 / jωCIN).
Figure 9-1. ADC Equivalent Input Impedance
Figure 9-2 and Figure 9-3 show how input impedance (ZIN= RIN|| CIN) varies over input frequency.
Differential Input Capacitance, Cin (pF)
Differential Input Resistance, Rin (kΩ)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
100
200
300
Frequency (MHz)
400
500
6
5
4
3
2
1
0
100
G037
Figure 9-2. ADC Analog Input Resistance (RIN) vs
Frequency
200
300
Frequency (MHz)
400
500
G038
Figure 9-3. ADC Analog Input Capacitance (CIN) vs
Frequency
9.2 Typical Application
Depending on the input frequency, sampling rate, and input amplitude, one of these metrics plays a dominant
part in limiting performance. At very high input frequencies, SFDR is determined largely by the device sampling
circuit nonlinearity. At low input amplitudes, the quantizer nonlinearity typically limits performance. Glitches are
caused by opening and closing the sampling switches. The driving circuit should present a low source
impedance to absorb these glitches, otherwise these glitches may limit performance. A low impedance path
between the analog input terminals and VCM is required from the common-mode switching currents perspective
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mode voltage (VCM). The device includes an internal R-C filter from each input to ground. The purpose of this
filter is to absorb the sampling glitches inside the device itself. The R-C component values are also optimized to
support high input bandwidth (up to 500 MHz). However, using an external R-LC-R filter as a part of drive circuit
can improve glitch filtering, thus further resulting in better performance. In addition, the drive circuit may have to
be designed to provide a low insertion loss over the desired frequency range and matched source impedance. In
doing so, the ADC input impedance (shown in Figure 9-2 and Figure 9-3) must be considered.
9.2.1 Design Requirements
For optimum performance, the analog inputs must be driven differentially. An optional 5-Ω to 15-Ω resistor inseries with each input pin can be kept to damp out ringing caused by package parasitic. The drive circuit may
have to be designed to minimize the impact of kick-back noise generated by sampling switches opening and
closing inside the ADC, as well as ensuring low insertion loss over the desired frequency range and matched
impedance to the source.
9.2.2 Detailed Design Procedure
Two example driving circuits with a 50-Ω source impedance are shown in Figure 9-4 and Figure 9-5. The driving
circuit in Figure 9-4 is optimized for input frequencies in the second Nyquist zone (centered at 185 MHz),
whereas the circuit in Figure 9-5 is optimized for input frequencies in third Nyquist zone (centered at 310 MHz).
Note that both drive circuits are terminated by 50 Ω near the ADC side. This termination is accomplished with a
25-Ω resistor from each input to the 1.15-V common-mode (VCM) from the device. This architecture allows the
analog inputs to be biased around the required common-mode voltage.
The mismatch in the transformer parasitic capacitance (between the windings) results in degraded even-order
harmonic performance. Connecting two identical RF transformers back-to-back helps minimize this mismatch
and good performance is obtained for high-frequency input signals.
50 :
T1
T2
0.1 PF
10 :
INP
25 :
Band-Pass Filter
Centered at
f0 = 185 MHz
BW = 125 MHz
25 :
82 nH
RIN
10 pF
CIN
0.1 PF
25 :
25 :
INM
1:1
1:1
10 :
0.1 PF
VCM
Device
Figure 9-4. Driving Circuit for a 50-Ω Source Impedance and Input Frequencies in the Second Nyquist
Zone
50 :
T1
T2
0.1 PF
10 :
INP
25 :
Band-Pass Filter
Centered at
f0 = 310 MHz
BW = 125 MHz
25 :
27 nH
RIN
10 pF
CIN
0.1 PF
25 :
25 :
INM
1:1
1:1
0.1 PF
10 :
VCM
Device
Figure 9-5. Driving Circuit for a 50-Ω Source Impedance and Input Frequencies in the Third Nyquist Zone
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TI recommends terminating the drive circuit by a 50-Ω (or lower) impedance near the ADC for best performance.
However, in some applications higher impedances be required to terminate the drive circuit. Two example driving
circuits with 100-Ω differential termination are shown in Figure 9-6 and Figure 9-7. In these example circuits, the
1:2 transformer (T1) is used to transform the 50-Ω source impedance into a differential 100 Ω at the input of the
band-pass filter. In Figure 9-6, the parallel combination of two 68-Ω resistors and one 120-nH inductor and two
100-Ω resistors is used (100 Ω is the effective impedance in pass-band) for better performance.
T1
50 :
0.1 PF
T2
10 :
INP
68 :
Band-Pass Filter
Centered at
f0 = 185 MHz
BW = 125 MHz
25 :
100 :
120 nH
82 nH
RIN
10 pF
CIN
0.1 PF
100 :
68 :
25 :
10 :
1:2
INM
0.1 PF
1:1
VCM
Device
Figure 9-6. Driving Circuit for a 100-Ω Source Impedance and Input Frequencies in the Second Nyquist
Zone
50 :
T1
T2
0.1 PF
10 :
INP
25 :
50 :
Band-Pass Filter
Centered at
f0 = 310 MHz
BW = 125 MHz
27 nH
RIN
10 pF
CIN
0.1 PF
50 :
25 :
10 :
1:2
1:1
INM
0.1 PF
VCM
Device
Figure 9-7. Driving Circuit for a 100-Ω Source Impedance and Input Frequencies in the Third Nyquist
Zone
9.2.3 Application Curves
0
0
−20
−20
−40
−40
Amplitude (dB)
Amplitude (dB)
Figure 10 and Figure 11 below show performance obtained at 170-MHz and 230-MHz input frequencies
respectively using appropriate driving circuit.
−60
−80
−100
−120
−60
−80
−100
0
25
50
75
Frequency (MHz)
100
125
−120
0
G005
Figure 9-8. FFT For 170-MHz Input Signal
25
50
75
Frequency (MHz)
100
125
G006
Figure 9-9. FFT For 230MHz Input Signal
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9.2.4 Enabling 14-Bit Resolution
By default after reset, the device outputs 11-bit data on the Dxx13P, Dxx13M and Dxx3P, Dxx3M terminals and
OVR information on the Dxx0P, Dxx0M terminals. When the ALWAYS WRITE 1 bits are set, the ADC outputs 13bit data on the Dxx13P, Dxx13M and Dxx1P, Dxx1M terminals and OVR information on the Dxx0P, Dxx0M
terminals. To enable 14-bit resolution, the DIS OVR ON LSB register bit must be set to 1 as indicated in Table
9-1.
Table 9-1. ADC Configuration
DATA ON ADC TERMINALS
ADC TERMINAL
NAMES
AFTER RESET
ALWAYS WRITE 1 = 1
ALWAYS WRITE 1 = 1
DIS OVR ON LSB = 1
Dxx13
D13
D13
D13
—
—
—
—
Dxx3
D3
D3
D3
Dxx2
Logic 0
D2
D2
Dxx1
Logic 1
D1
D1
Dxx0
OVR
OVR
D0
Comments
11-bit data (D[13:3]) and OVR come on
ADC output terminals
13-bit data (D[13:1]) and OVR come
on ADC output terminals
14-bit data comes on ADC output
terminals
9.2.5 Analog Input
The analog input consists of a switched-capacitor-based differential sample-and-hold architecture. This
differential topology results in very good ac performance even for high input frequencies at high sampling rates.
The INP and INM terminals must be externally biased around a common-mode voltage of 1.15 V, available on
the VCM terminal. For a full-scale differential input, each input terminal (INP, INM) must swing symmetrically
between VCM + 0.5 V and VCM – 0.5 V, resulting in a 2-VPP differential input swing.
The input sampling circuit has a high 3-dB bandwidth that extends up to 500 MHz when a 50-Ω source drives the
ADC analog inputs.
9.2.6 Drive Circuit Requirements
This configuration improves the common-mode noise immunity and even-order harmonic rejection. A 5-Ω to 15Ω resistor in series with each input terminal is recommended to damp out ringing caused by package parasitics.
Glitches are caused by opening and closing the sampling switches. The driving circuit should present a low
source impedance to absorb these glitches, otherwise these glitches may limit performance. A low impedance
path between the analog input terminals and VCM is required from the common-mode switching currents
perspective as well. This impedance can be achieved by using two resistors from each input terminated to the
common-mode voltage (VCM).
The device includes an internal R-C filter from each input to ground. The purpose of this filter is to absorb the
sampling glitches inside the device itself. The R-C component values are also optimized to support high input
bandwidth (up to 500 MHz). However, using an external R-LC-R filter (refer to Figure 9-4, Figure 9-5, Figure 9-6,
Figure 9-7, and Figure 9-10) improves glitch filtering, thus further resulting in better performance.
In addition, the drive circuit may have to be designed to provide a low insertion loss over the desired frequency
range and matched source impedance. In doing so, the ADC input impedance must be considered. Figure 9-1,
Figure 9-2, and Figure 9-3 show the impedance (ZIN = RIN || CIN) at the ADC input terminals.
Spurious-free dynamic range (SFDR) performance can be limited because of several reasons (such as the effect
of sampling glitches, sampling circuit nonlinearity, and quantizer nonlinearity that follows the sampling circuit).
Depending on the input frequency, sampling rate, and input amplitude, one of these metrics plays a dominant
part in limiting performance. At very high input frequencies, SFDR is determined largely by the device sampling
circuit nonlinearity. At low input amplitudes, the quantizer nonlinearity typically limits performance.
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9.2.7 Clock Input
The device clock inputs can be driven differentially with a sine, LVPECL, or LVDS source with little or no
difference in performance between them. The common-mode voltage of the clock inputs is set to 0.95 V using
internal 5-kΩ resistors, as shown in Figure 9-10. This setting allows the use of transformer-coupled drive circuits
for sine-wave clock or ac-coupling for LVPECL, LVDS, and LVCMOS clock sources (see Figure 9-11, Figure
9-12, and Figure 9-13).
For best performance, the clock inputs must be driven differentially, thereby reducing susceptibility to commonmode noise. TI recommends keeping the differential voltage between clock inputs less than 1.8 V PP to obtain
best performance. A clock source with very low jitter is recommended for high input frequency sampling. Bandpass filtering of the clock source can help reduce the effects of jitter. With a non-50% duty cycle clock input,
performance does not change.
Clock Buffer
LPKG
~ 2 nH
20 Ω
CLKP
CBOND
~ 1 pF
CEQ
RESR
~ 100 Ω
CEQ
5 kΩ
0.95V
LPKG
~ 2 nH
5 kΩ
20 Ω
CLKM
CBOND
~ 1 pF
RESR
~ 100 Ω
NOTE: CEQ is 1 pF to 3 pF and is the equivalent input capacitance of the clock buffer.
Figure 9-10. Internal Clock Buffer
0.1 mF
CLKP
Differential
Sine-Wave
Clock Input
RT
0.1 mF
CLKM
A. RT is the termination resistor (optional).
Figure 9-11. Differential Sine-Wave Clock Driving Circuit
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ZO
0.1 mF
CLKP
150 W
Typical LVPECL
Clock Input
100 W
ZO
0.1 mF
CLKM
150 W
Figure 9-12. LVPECL Clock Driving Circuit
ZO
0.1 mF
CLKP
Typical LVDS
Clock Input
100 W
ZO
0.1 mF
CLKM
Figure 9-13. LVDS Clock Driving Circuit
0.1 mF
CLKP
CMOS
Clock Input
VCM
0.1 mF
CLKM
Figure 9-14. Typical LVCMOS Clock Driving Circuit
10 Power Supply Recommendations
The device requires a 1.8-V nominal supply for AVDD and DVDD. There are no specific sequence power-supply
requirements during device power-up. AVDD and DVDD can power up in any order.
48
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11 Layout
11.1 Layout Guidelines
The ADS4449 EVM layout can be used as a reference layout to obtain the best performance. A layout diagram
of the EVM top layer is provided in Figure 11-1. Some important points to remember during laying out the board
are:
• Analog inputs are located on opposite sides of the device pin out to ensure minimum crosstalk on the
package level. To minimize crosstalk onboard, the analog inputs should exit the pin out in opposite directions,
as shown in the reference layout of Figure 66 as much as possible.
• In the device pin out, the sampling clock is located on a side perpendicular to the analog inputs in order to
minimize coupling between them. This configuration is also maintained on the reference layout of Figure 66
as much as possible.
• Digital outputs should be kept away from the analog inputs. When these digital outputs exit the pin out, the
digital output traces should not be kept parallel to the analog input traces because this configuration may
result in coupling from digital outputs to analog inputs and degrade performance. All digital output traces to
the receiver [such as a field-programmable gate array (FPGA) or an application-specific integrated circuit
(ASIC)] should be matched in length to avoid skew among outputs.
• At each power-supply pin (AVDD and DVDD), a 0.1-µF decoupling capacitor should be kept close to the
device. A separate decoupling capacitor group consisting of a parallel combination of 10-µF, 1-µF, and 0.1-µF
capacitors can be kept close to the supply source.
11.2 Layout Example
Figure 11-1. ADS4449 Layout
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12 Device and Documentation Support
12.1 Device Nomenclature
Analog
Bandwidth
The analog input frequency at which the power of the fundamental is reduced by 3 dB with
respect to the low-frequency value.
Aperture Delay
The delay in time between the rising edge of the input sampling clock and the actual time
at which the sampling occurs. This delay is different across channels. The maximum
variation is specified as an aperture delay variation (channel-to-channel).
Aperture
Uncertainty
(Jitter)
The sample-to-sample variation in aperture delay.
Clock Pulse
Width and Duty
Cycle
The duty cycle of a clock signal is the ratio of the time the clock signal remains at a logic
high (clock pulse width) to the period of the clock signal. Duty cycle is typically expressed
as a percentage. A perfect differential sine-wave clock results in a 50% duty cycle.
Maximum
Conversion Rate
The maximum sampling rate at which specified operation is given. All parametric testing is
performed at this sampling rate, unless otherwise noted.
Minimum
Conversion Rate
The minimum sampling rate at which the ADC functions.
Differential
Nonlinearity
(DNL)
An ideal ADC exhibits code transitions at analog input values spaced exactly 1 LSB apart.
DNL is the deviation of any single step from this ideal value, measured in units of LSBs.
Integral
INL is the deviation of the ADC transfer function from a best-fit line determined by a leastNonlinearity (INL) squares curve fit of that transfer function, measured in units of LSBs.
Gain Error
Gain error is the deviation of the ADC actual input full-scale range from the ideal value.
Gain error is given as a percentage of the ideal input full-scale range. Gain error has two
components: error as a result of reference inaccuracy and error as a result of the channel.
Both errors are specified independently as EGREF and EGCHAN.
To a first-order approximation, the total gain error of E TOTAL is approximately E GREF + E
GCHAN.
For example, if ETOTAL = ±0.5%, the full-scale input varies from (1 – 0.5 / 100) × fS ideal to (1
+ 0.5 / 100) × fS ideal.
Offset Error
Offset error is the difference, given in number of LSBs, between the ADC actual average
idle channel output code and the ideal average idle channel output code. This quantity is
often mapped into millivolts.
Temperature Drift The temperature drift coefficient (with respect to gain error and offset error) specifies the
change per degree Celsius of the parameter from TMIN to TMAX. The coefficient is
calculated by dividing the maximum deviation of the parameter across the TMIN to TMAX
range by the difference of TMAX – TMIN.
Signal-to-Noise
Ratio (SNR)
SNR is the ratio of the power of the fundamental (PS) to the noise floor power (PN),
excluding the power at dc and the first nine harmonics.
SNR = 10Log10
PS
PN
(1)
SNR is either given in units of dBc (dB to carrier) when the absolute power of the
fundamental is used as the reference, or dBFS (dB to full-scale) when the power of the
fundamental is extrapolated to the converter full-scale range.
50
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Signal-to-Noise
and Distortion
(SINAD)
SINAD is the ratio of the power of the fundamental (PS) to the power of all other spectral
components, including noise (PN) and distortion (PD) but excluding dc.
SINAD = 10Log10
PS
PN + PD
(2)
SINAD is either given in units of dBc (dB to carrier) when the absolute power of the
fundamental is used as the reference, or dBFS (dB to full-scale) when the power of the
fundamental is extrapolated to the converter full-scale range.
12.2 Documentation Support
12.2.1 Related Documentation
For related documentation see the following:
•
•
•
ADS4449 User Guide, SLAU485
Design Considerations for Avoiding Timing Errors during High-Speed ADC, LVDS Data Interface with FPGA,
SLAA592
Why Oversample when Undersampling can do the Job?, SLAA594
12.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
12.4 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.5 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
12.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.7 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
ADS4449IZCR
ACTIVE
NFBGA
ZCR
144
184
RoHS & Green
SNAGCU
Level-3-260C-168 HR
-40 to 85
ADS4449I
ADS4449IZCRR
ACTIVE
NFBGA
ZCR
144
1000
RoHS & Green
SNAGCU
Level-3-260C-168 HR
-40 to 85
ADS4449I
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of