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ADS8319
SLAS600C – MAY 2008 – REVISED DECEMBER 2016
ADS8319 16-Bit, 500-kSPS, Serial Interface, Micropower, Miniature,
SAR Analog-to-Digital Converter
1 Features
3 Description
•
•
•
•
•
The ADS8319 device is a 16-bit, 500-kSPS, analogto-digital converter (ADC) that operates with a 2.25-V
to 5.5-V external reference. The device includes a
capacitor-based, successive-approximation register
(SAR) ADC with inherent sample and hold.
1
•
•
•
•
•
500-kHz Sample Rate
16-Bit Resolution
Zero Latency at Full Speed
Unipolar, Single-Ended Input Range: 0 V to VREF
SPI-Compatible Serial Interface With Daisy-Chain
Option
Excellent Performance:
– 93.6-dB SNR (Typical) at 10-kHz Input
– –106-dB THD (Typical) at 10-kHz Input
– ±1.5-LSB (Maximum) INL
– ±1-LSB (Maximum) DNL
Low Power Dissipation:
18 mW (Typical) at 500 kSPS
Power Scales Linearly with Speed:
3.6 mW / 100 kSPS
Power Dissipation During Power-Down State:
0.25 µW (Typical)
10-Pin VSSOP and VSON Packages
The device includes a 50-MHz, SPI-compatible serial
interface. The interface is designed to support daisychaining or cascading of multiple devices.
Furthermore, a Busy Indicator makes synchronizing
with the digital host easy.
The device unipolar, single-ended input
supports an input swing of 0 V to +VREF.
Device operation is optimized for very-low power
operation and the power consumption directly scales
with speed. This feature makes the device attractive
for lower-speed applications. The device is available
in 10-pin VSSOP and VSON packages.
Device Information(1)
PART NUMBER
ADS8319
2 Applications
•
•
•
•
•
range
PACKAGE
BODY SIZE (NOM)
VSSOP (10)
3.00 mm × 3.00 mm
VSON (10)
3.00 mm × 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Battery-Powered Equipment
Data Acquisition Systems
Instrumentation and Process Controls
Medical Electronics
Optical Networking
Simplified Schematic
+VA
SAR
O/P
Drive
COMP
I/P
Shift
Reg
IN+
CDAC
+VBD
IN-
REFIN
Conversion and I/O
Control Logic
ADS8319
GND
SDO
SDI
SCLK
CONVST
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ADS8319
SLAS600C – MAY 2008 – REVISED DECEMBER 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
4
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
4
4
4
4
5
7
7
9
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Timing Requirements: +VBD ≥ 4.5 V........................
Timing Requirements: 4.5 V > +VBD ≥ 2.375 V ......
Typical Characteristics ..............................................
Detailed Description ............................................ 16
8.1 Overview ................................................................. 16
8.2 Functional Block Diagram ....................................... 16
8.3 Feature Description................................................. 17
8.4 Device Functional Modes........................................ 19
9
Application and Implementation ........................ 27
9.1 Application Information............................................ 27
9.2 Typical Application .................................................. 27
10 Power Supply Recommendations ..................... 29
11 Layout................................................................... 29
11.1 Layout Guidelines ................................................. 29
11.2 Layout Example .................................................... 30
12 Device and Documentation Support ................. 31
12.1
12.2
12.3
12.4
12.5
12.6
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
31
31
31
31
31
31
13 Mechanical, Packaging, and Orderable
Information ........................................................... 31
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (December 2015) to Revision C
Page
•
Added ESD Ratings table, Recommended Operating Conditions table, Thermal Information table, Functional Block
Diagram, Application and Implementation section, Power Supply Recommendations section, and Layout section ............. 1
•
Changed all references of MSOP to VSSOP ........................................................................................................................ 1
•
Changed all references of SON to VSON ............................................................................................................................. 1
•
Moved Operation temperature From: Electrical Characteristics table To: Recommended Operating Conditions table ....... 4
•
Changed Thermal impedance, RθJA, values in Thermal Information table From: 180°C/W To: 107.5°C/W (VSSOP)
and From: 70°C/W To: 87.2°C/W (VSON) ............................................................................................................................. 4
Changes from Revision A (September 2013) to Revision B
Page
•
Deleted data from the Device Comparison Table this is repeated in the POA ...................................................................... 3
•
Changed External Reference Input, VREF parameter maximum specification ........................................................................ 6
•
Changed VDD to +VA in first sentence fo the Reference section .......................................................................................... 18
•
Changed Figure 51: added +VBD to device SDI connection ............................................................................................... 21
•
Changed Figure 57: changed device number for device blocks .......................................................................................... 24
•
Changed Figure 58: changed SDO #2 trace ........................................................................................................................ 25
•
Changed Figure 59: changed device number for device blocks .......................................................................................... 25
•
Changed Figure 60: changed SDO #2 trace ........................................................................................................................ 26
Changes from Original (May 2008) to Revision A
Page
•
Changed CBC to CEN in Ordering Information...................................................................................................................... 3
•
Changed CBE to CEP in Ordering Information ...................................................................................................................... 3
2
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SLAS600C – MAY 2008 – REVISED DECEMBER 2016
5 Device Comparison Table
DEVICE
MAXIMUM INTEGRAL
LINEARITY (LSB)
MAXIMUM DIFFERENTIAL
LINEARITY (LSB)
NO MISSING CODES AT
RESOLUTION (Bits)
ADS8319I
±2.5
1.5, –1
16
ADS8319IB
±1.5
±1
16
6 Pin Configuration and Functions
DGS Package
10-Pin VSSOP
Top View
DRC Package
10-Pin VSON With Exposed Thermal Pad
Top View
REFIN
1
10
+VBD
+VA
2
9
SDI
+IN
3
8
SCLK
–IN
4
7
SDO
GND
5
6
CONVST
REFIN
1
10
+VA
2
9
SDI
+IN
3
8
SCLK
–IN
4
7
SDO
GND
5
6
CONVST
PAD
+VBD
Not to scale
Not to scale
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
CONVST
6
Input
Convert input. CONVST also functions as the CS input in 3-wire interface mode. See CS Mode for more
details.
GND
5
Power
Device ground. This pin is a common ground for both analog power supply (+VA) and digital I/O supply
(+VBD).
+IN
3
Analog
Input
Noninverting analog signal input
–IN
4
Analog
Input
Inverting analog signal input. This input is limited to ±0.1 V and is typically grounded at the input
decoupling capacitor.
REFIN
1
Analog
Input
Reference (positive) input. Decouple to GND with a 0.1-µF bypass capacitor and a 10-µF storage
capacitor.
SCLK
8
Input
SDO
7
Output
SDI
9
Input
Serial data input. The SDI level at the start of a conversion selects the mode of operation (such as CS or
daisy-chain mode). This pin also serves as the CS input in 4-wire interface mode. See CS Mode for more
details.
+VA
2
Power
Analog power supply. Decouple to GND.
+VBD
10
Power
Digital I/O power supply. Decouple to GND.
Serial I/O clock input. Data (on the SDO output are synchronized with this clock.
Serial data output
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ADS8319
SLAS600C – MAY 2008 – REVISED DECEMBER 2016
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
+IN pin voltage
MIN
MAX
UNIT
–0.3
+VA + 0.3
V
±130
mA
+IN pin current
–IN pin voltage
–0.3
–IN pin current
0.3
V
±130
mA
+VA to AGND
–0.3
7
V
+VBD to BDGND
–0.3
7
V
Digital input voltage to GND
–0.3
+VBD + 0.3
V
Digital output to GND
–0.3
+VBD + 0.3
V
260
°C
260
°C
85
°C
150
°C
150
°C
Maximum VSSOP reflow temperature (2)
Maximum VSON reflow temperature (2)
Operating free-air temperature, TA
–40
Junction temperature, TJ(MAX)
Storage temperature, Tstg
(1)
(2)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The device is rated to MSL2 260°C, as per the JSTD-020 specification.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
4.5
5
5.5
V
2.375
3.3
5.5
V
Reference voltage
2.25
4.096
+VA + 0.1
V
Operating temperature
–40
85
°C
+VA
Analog power-supply voltage
+VBD
Digital I/O-supply voltage
VREF
TA
UNIT
7.4 Thermal Information
ADS8319
THERMAL METRIC (1)
DGS (VSSOP)
DRC (VSON)
10 PINS
10 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
107.5
87.2
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
21.8
31.1
°C/W
RθJB
Junction-to-board thermal resistance
24.2
25.5
°C/W
ψJT
Junction-to-top characterization parameter
0.6
1
°C/W
ψJB
Junction-to-board characterization parameter
24.4
29.2
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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SLAS600C – MAY 2008 – REVISED DECEMBER 2016
7.5 Electrical Characteristics
TA = –40°C to 85°C, +VA = 5 V, +VBD = 5 V to 2.375 V, VREF = 4 V, and fSAMPLE = 500 kHz, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
ANALOG INPUT
Full-scale input span (1)
Operating input
+IN – (–IN)
0
VREF
+IN
–0.1
VREF + 0.1
–IN
–0.1
0.1
Input capacitance
Input leakage current
During acquisition
V
59
pF
1000
pA
16
Bits
SYSTEM PERFORMANCE
Resolution
No missing codes
INL
Integral linearity (2)
DNL
Differential linearity
EO
Offset error (4)
EG
Gain error
16
Bits
ADS8319I
–2.5
±1.2
2.5
ADS8319IB
–1.5
±1
1.5
ADS8319I
–1
±0.65
1.5
ADS8319IB
–1
±0.5
1
–1.5
±0.3
1.5
–0.03
±0.0045
At 16-bit level
CMRR
Common-mode rejection ratio
With common-mode input
signal = 200 mVPP at 500 kHz
PSRR
Power-supply rejection ratio
At FFF0h output code
LSB
mV
0.03 %FSR
78
Transition noise
LSB (3)
dB
80
dB
0.5
LSB
SAMPLING DYNAMICS
tCONV
Conversion time
Acquisition time
+VBD = 5 V
1400
+VBD = 3 V
1400
+VBD = 5 V
600
+VBD = 3 V
600
ns
Maximum throughput rate with
or without latency
0.5
Aperture delay
Aperture jitter, RMS
ns
MHz
2.5
ns
6
ps
Step response
Settling to 16-bit accuracy
600
ns
Overvoltage recovery
Settling to 16-bit accuracy
600
ns
DYNAMIC CHARACTERISTICS
THD
Total harmonic distortion (5)
VIN 0.4 dB below FS at 1 kHz, VREF = 5 V
–111
VIN 0.4 dB below FS at 10 kHz, VREF = 5 V
–106
VIN 0.4 dB below FS at 100 kHz, VREF = 5 V
–89
ADS8319IB, VIN 0.4 dB below FS at 1 kHz,
VREF = 5 V
SNR
SINAD
(1)
(2)
(3)
(4)
(5)
Signal-to-noise ratio
Signal-to-noise + distortion
dB
92
VIN 0.4 dB below FS at 1 kHz, VREF = 5 V
93.9
VIN 0.4 dB below FS at 10 kHz, VREF = 5 V
93.6
VIN 0.4 dB below FS at 100 kHz, VREF = 5 V
92.2
VIN 0.4 dB below FS at 1 kHz, VREF = 5 V
93.8
VIN 0.4 dB below FS at 10 kHz, VREF = 5 V
93.4
VIN 0.4 dB below FS at 100 kHz, VREF = 5 V
87.4
dB
dB
Ideal input span, does not include gain or offset error.
This parameter is endpoint INL, not best fit.
LSB means least significant bit.
Measured relative to actual measured reference.
Calculated on the first nine harmonics of the input frequency.
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ADS8319
SLAS600C – MAY 2008 – REVISED DECEMBER 2016
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Electrical Characteristics (continued)
TA = –40°C to 85°C, +VA = 5 V, +VBD = 5 V to 2.375 V, VREF = 4 V, and fSAMPLE = 500 kHz, unless otherwise noted.
PARAMETER
SFDR
Spurious-free dynamic range
TEST CONDITIONS
MIN
TYP
VIN 0.4 dB below FS at 1 kHz, VREF = 5 V
113
VIN 0.4 dB below FS at 10 kHz, VREF = 5 V
107
VIN 0.4 dB below FS at 100 kHz, VREF = 5 V
90
–3-dB small-signal bandwidth
MAX
UNIT
dB
15
MHz
EXTERNAL REFERENCE INPUT
VREF
Reference input
Reference input current (6)
2.25
During conversion
4.096
+VA + 0.1
250
V
µA
POWER SUPPLY REQUIREMENTS
Power-supply voltage
+VBD
+VA
2.375
3.3
5.5
4.5
5
5.5
V
Supply current
+VA, 500-kHz sample rate
3.6
4.5
mA
PVA
Power dissipation
+VA = 5 V, 500-kHz sample rate
18
22.5
mW
IVApd
Device power-down current (7)
+VA = 5 V
50
300
nA
LOGIC FAMILY CMOS
VIH
Input HIGH logic level
IIH = 5 µA
+(0.7 × VBD)
+VBD + 0.3
VIL
Input LOW logic level
IIL = 5 µA
–0.3
+(0.3 × VBD)
VOH
Output HIGH logic level
IOH = 2 TTL loads
+VBD – 0.3
+VBD
VOL
Output LOW logic level
IOL = 2 TTL loads
0
0.4
(6)
(7)
6
V
Can vary by ±20%.
The device automatically enters a power-down state at the end of every conversion and remains in a power-down state during the
acquisition phase.
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SLAS600C – MAY 2008 – REVISED DECEMBER 2016
7.6 Timing Requirements: +VBD ≥ 4.5 V
All specifications are typical at –40°C to 85°C, +VA = 5 V, and +VBD ≥ 4.5 V, unless otherwise noted.
REFERENCE FIGURE
MIN
MAX
UNIT
SAMPLING AND CONVERSION RELATED
tACQ
Acquisition time
tcnv
Conversion time
tcyc
Time between conversions
t1
Pulse duration, CONVST high
t6
Pulse duration, CONVST low
600
Figure 50, Figure 52, Figure 53, Figure 55
ns
1400
ns
2000
ns
Figure 50, Figure 52
10
ns
Figure 53, Figure 55, Figure 58
20
ns
20
ns
9
ns
9
ns
I/O RELATED
tclk
SCLK period
tclkl
SCLK low time
tclkh
SCLK high time
t2
SCLK falling edge to data remains valid
t3
SCLK falling edge to next data valid delay
ten
Enable time, CONVST or SDI low to MSB valid
tdis
Disable time, CONVST or SDI high or last SCLK
falling edge to SDO 3-state (CS mode)
t4
Setup time, SDI valid to CONVST rising edge
t5
Hold time, SDI valid from CONVST rising edge
t7
Setup time, SCLK valid to CONVST rising edge
t8
Hold time, SCLK valid from CONVST rising edge
Figure 50, Figure 52, Figure 53, Figure 55,
Figure 58, Figure 60
5
ns
16
ns
Figure 50, Figure 53
15
ns
Figure 50, Figure 52, Figure 53, Figure 55
12
ns
Figure 53, Figure 55
Figure 58
5
ns
5
ns
5
ns
5
ns
7.7 Timing Requirements: 4.5 V > +VBD ≥ 2.375 V
All specifications are typical at –40°C to 85°C, +VA = 5 V, and +4.5 V > +VBD ≥ 2.375 V, unless otherwise noted.
REFERENCE FIGURE
MIN
MAX
UNIT
SAMPLING AND CONVERSION RELATED
tACQ
Acquisition time
tcnv
Conversion time
600
tcyc
Time between conversions
2000
ns
t1
Pulse width CONVST high
Figure 50, Figure 52
10
ns
t6
Pulse width CONVST low
Figure 53, Figure 55, Figure 58
20
ns
Figure 50, Figure 52, Figure 53, Figure 55
ns
1400
ns
I/O RELATED
tclk
SCLK period
30
ns
tclkl
SCLK low time
13
ns
tclkh
SCLK high time
13
ns
t2
SCLK falling edge to data remains valid
t3
SCLK falling edge to next data valid delay
ten
CONVST or SDI low to MSB valid
tdis
CONVST or SDI high or last SCLK falling edge to
Figure 50, Figure 52, Figure 53, Figure 55
SDO 3-state (CS mode)
t4
SDI valid setup time to CONVST rising edge
t5
SDI valid hold time from CONVST rising edge
t7
SCLK valid setup time to CONVST rising edge
t8
SCLK valid hold time from CONVST rising edge
Figure 50, Figure 52, Figure 53, Figure 55,
Figure 58, Figure 60
5
Figure 50, Figure 53
Figure 53, Figure 55
Figure 58
ns
24
ns
22
ns
15
ns
5
ns
5
ns
5
ns
5
ns
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ADS8319
SLAS600C – MAY 2008 – REVISED DECEMBER 2016
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500µA
I ol
From
SDO
1.4V
20pF
500µA
I oh
Figure 1. Load Circuit for Digital Interface Timing
0.7 VBD
0.3 VBD
t DELAY
tDELAY
2V
2V
0.8V
0.8V
Figure 2. Voltage Levels for Timing
8
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SLAS600C – MAY 2008 – REVISED DECEMBER 2016
7.8 Typical Characteristics
0.005
-0.2
0.0045
-0.25
0.004
-0.35
-0.4
+VBD = 2.7 V,
Vref = 4.096 V,
fs = 500 KSPS,
TA = 30°C
-0.45
-0.5
4.5
4.75
5
5.25
0.0035
Gain Error - %FSR
Offset Error - mV
-0.3
0.003
0.0025
0.002
0.0015
0.0005
0
4.5
5.5
+VA - Supply Voltage - V
4.75
5.25
5.5
Figure 4. Gain Error vs Supply Voltage
0.0045
0
+VBD = 2.7 V,
+VA = 5 V,
fs = 500 KSPS,
TA = 30°C
-0.05
0.004
0.0035
Gain Error - %FSR
-0.1
-0.15
-0.2
-0.25
0.003
0.0025
0.002
0.0015
+VBD = 2.7 V,
+VA = 5 V,
fs = 500 KSPS,
TA = 30°C
0.001
-0.3
0.0005
-0.35
2
2.5
3
3.5
4
4.5
Vref - Reference Voltage - V
0
5
2
Figure 5. Offset Error vs Reference Voltage
-0.2
5
0.01
+VA = 5 V,
+VBD = 2.7 V,
Vref = 5 V,
fs = 500 KSPS
0.009
0.008
Gain Error - %FSR
-0.3
-0.4
-0.5
-0.6
-0.7
0.007
0.005
0.004
0.003
0.002
-0.9
0.001
-25 -10
5
20
35
50
65
0
-40 -25 -10 5
20
35 50 65
TA - Free-Air Temperature - °C
80
TA - Free-Air Temperature - °C
Figure 7. Offset Error vs Free-Air Temperature
+VA = 5 V,
+VBD = 2.7 V,
Vref = 5 V,
fs = 500 KSPS
0.006
-0.8
-1
-40
2.5
3
3.5
4
4.5
Vref - Reference Voltage - V
Figure 6. Gain Error vs Reference Voltage
0
-0.1
Offset Error - mV
5
+VA - Supply Voltage - V
Figure 3. Offset Error vs Supply Voltage
Offset Error - mV
+VBD = 2.7 V,
Vref = 4.096 V,
fs = 500 KSPS,
TA = 30°C
0.001
80
Figure 8. Gain Error vs Free-Air Temperature
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Typical Characteristics (continued)
25
14
+VA = 5 V,
+VBD = 2.7 V,
Vref = 5 V,
fs = 500 KSPS
10
20
8
6
4
3
10
5
5
5
1
0
0
0
0
0
0
1
0
0
0
-0.5 -0.4-0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5
ppm/°C
0.6
0
0
0
0
0
Figure 10. Offset Error Drift Histogram
1.5
INL - Integral Nonlinearity LSBs
+VBD = 2.7 V,
Vref = 4.096 V,
fs = 500 KSPS,
TA = 30°C
0.8
0
-0.5 -0.4 -0.3-0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5
ppm/°C
Figure 9. Gain Error Drift Histogram
1
DNL - Differential Nonlinearity - LSBs
20
15
3
2
DNLMAX
0.4
0.2
0
-0.2
DNLMIN
-0.4
-0.6
INLMAX
1
0.5
+VBD = 2.7 V,
Vref = 4.096 V,
fs = 500 KSPS,
TA = 30°C
0
-0.5
INLMIN
-1
-0.8
-1
4.5
4.75
5
5.25
+VA - Supply Voltage - V
-1.5
4.5
5.5
5
5.25
5.5
Figure 12. Integral Nonlinearity vs Supply Voltage
1.5
1
0.8
INL - Integral Nonlinearity LSBs
DNL - Differential Nonlinearity LSBs
4.75
+VA - Supply Voltage - V
Figure 11. Differential Nonlinearity vs Supply Voltage
DNLMAX
0.6
0.4
+VA = 5 V,
+VBD = 2.7 V,
fs = 500 KSPS,
TA = 30°C
0.2
0
-0.2
DNLMIN
-0.4
-0.6
INLMAX
1
0.5
+VA = 5 V,
+VBD = 2.7 V,
fs = 500 KSPS,
TA = 30°C
0
-0.5
INLMIN
-1
-0.8
-1.5
-1
2
2.5
3
3.5
4
4.5
Vref - Reference Voltage - V
2
5
Figure 13. Differential Nonlinearity vs Reference Voltage
10
+VA = 5 V
+VBD = 2.7 V,
Vref = 5 V,
fs = 500 KSPS
12 12
Number of Devices
Number of Devices
12
2.5
3
3.5
4
4.5
Vref - Reference Voltage - V
5
Figure 14. Integral Nonlinearity vs Reference Voltage
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1
1
0.8
0.8
0.6
INL - Integral Nonlinearity - LSBs
INL - Integral Nonlinearity LSBs
Typical Characteristics (continued)
DNLMAX
0.4
0.2
0
-0.2
DNLMIN
-0.4
+VA = 5 V
+VBD = 2.7 V,
Vref = 5 V,
fs = 500 KSPS
-0.6
-0.8
-1
-40
-25 -10 5
20 35 50 65
TA - Free-Air Temperature - °C
0.6
0.4
0
-0.2
-0.4
-0.6
-0.8
15.7
15.5
15.4
15.3
15.2
15.1
4.75
5
5.25
+VA - Supply Voltage - V
15.6
15.4
15.2
15
14.8
14.6
14.4
14.2
15.6
15.5
15.4
15.3
15.2
15.1
-10
5
20 35
50 65
TA - Free-Air Temperature - °C
2.5
3
3.5
4
4.5
5
Figure 18. Effective Number of Bits vs Reference Voltage
SFDR - Spurious Free Dynamic Range - dB
+VA = 5 V,
+VBD = 2.7 V,
Vref = 5 V,
fs = 500 KSPS,
fi = 1.9 kHz
15
-40 -25
2
Vref - Reference Voltage - V
16
ENOB - Effective Number Of Bits - LSBs
+VA = 5 V,
+VBD = 2.7 V,
fs = 500 KSPS,
fi = 1.9 kHz,
TA = 30°C
15.8
5.5
Figure 17. Effective Number of Bits vs Supply Voltage
15.7
80
14
15
4.5
15.8
-10
5
20 35
50 65
TA - Free-Air Temperature - °C
16
+VBD = 2.7 V,
Vref = 4.096 V,
fs = 500 KSPS,
fi = 1.9 kHz,
TA = 30°C
15.6
15.9
-25
Figure 16. Integral Nonlinearity vs Free-Air Temperature
ENOB - Effective Number Of Bits - LSBs
ENOB - Effective Number Of Bits - LSBs
15.8
INLMIN
-1
-40
16
15.9
+VA = 5 V
+VBD = 2.7 V,
Vref = 5 V,
fs = 500 KSPS
0.2
80
Figure 15. Differential Nonlinearity vs Free-Air Temperature
INLMAX
80
Figure 19. Effective Number of Bits vs Free-Air Temperature
119
117
115
+VBD = 2.7 V,
Vref = 4.096 V,
fs = 500 KSPS,
fi = 1.9 kHz,
TA = 30°C
113
111
109
107
105
4.5
4.75
5
5.25
+VA - Supply Voltage - V
5.5
Figure 20. Spurious-Free Dynamic Range vs Supply Voltage
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Typical Characteristics (continued)
94.5
+VBD = 2.7 V,
Vref = 4.096 V,
fs = 500 KSPS,
fi = 1.9 kHz,
TA = 30°C
94
SNR - Signal-to-Noise Ratio - dB
SINAD - Signal-to-Noise and Distortion - dB
94.5
93.5
93
92.5
92
4.5
4.75
5
5.25
+VA - Supply Voltage - V
111
109
107
4.75
5
5.25
+VA - Supply Voltage - V
117
113
111
109
107
105
2
5.5
95
94.5
93
92.5
92
91.5
91
90.5
3
3.5
4
4.5
Vref - Reference Voltage - V
5
94
93.5
93
+VA = 5 V,
+VBD = 2.7 V,
fs = 500 KSPS,
fi = 1.9 kHz,
TA = 30°C
92.5
92
91.5
91
90.5
90
2
12
SNR - Signal-to-Noise Ratio - dB
SINAD - Signal-to-Noise + Distortion - dB
95
93.5
2.5
Figure 24. Spurious-Free Dynamic Range
vs Reference Voltage
94.5
+VA = 5 V,
+VBD = 2.7 V,
fs = 500 KSPS,
fi = 1.9 kHz,
TA = 30°C
5.5
+VA = 5 V,
+VBD = 2.7 V,
fs = 500 KSPS,
fi = 1.9 kHz,
TA = 30°C
115
Figure 23. Total Harmonic Distortion vs Supply Voltage
94
4.75
5
5.25
+VA - Supply Voltage - V
Figure 22. Signal-to-Noise Ratio vs Supply Voltage
113
105
4.5
+VBD = 2.7 V,
Vref = 4.096 V,
fs = 500 KSPS,
fi = 1.9 kHz,
TA = 30°C
92.5
SFDR - Spurious Free Dynamic Range - dB
THD - Total Harmonic Distortion - dB
115
93
92
4.5
+VBD = 2.7 V,
Vref = 4.096 V,
fs = 500 KSPS,
fi = 1.9 kHz,
TA = 30°C
117
93.5
5.5
Figure 21. Signal-to-Noise + Distortion vs Supply Voltage
119
94
2.5
3
3.5
4
4.5
5
90
2
Vref - Reference Voltage - V
2.5
3
3.5
4
4.5
Vref - Reference Voltage - V
Figure 25. Signal-to-Noise + Distortion vs Reference Voltage
Figure 26. Signal-to-Noise Ratio vs Reference Voltage
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THD - Total Harmonic Distortion - dB
117
SFDR - Spurious Free Dynamic Range - dB
Typical Characteristics (continued)
+VA = 5 V,
+VBD = 2.7 V,
fs = 500 KSPS,
fi = 1.9 kHz,
TA = 30°C
115
113
111
109
107
105
2
2.5
3
3.5
4
4.5
Vref - Reference Voltage - V
117
115
113
SFDR
111
5
109
107
105
103
-40
96
80
96
95
SINAD
94
93
+VA = 5 V,
+VBD = 2.7 V,
Vref = 5 V,
fs = 500 KSPS,
fi = 1.9 kHz
92
91
90
-40
-25
-10
5
20
35
50
65
SNR - Signal-to-Noise Ratio - dB
SINAD - Signal-to-noise + Distortion - dB
-25 -10
5
20 35 50 65
TA - Free-Air Temperature - °C
Figure 28. Spurious-Free Dynamic Range
vs Free-Air Temperature
Figure 27. Total Harmonic Distortion vs Reference Voltage
95
93
92
+VA = 5 V,
+VBD = 2.7 V,
Vref = 5 V,
fs = 500 KSPS,
fi = 1.9 kHz
91
90
-40
80
Figure 29. Signal-to-Noise + Distortion
vs Free-Air Temperature
SNR
94
TA - Free-Air Temperature - °C
-25
-10
5
20 35 50 65
TA - Free-Air Temperature - °C
80
Figure 30. Signal-to-Noise Ratio vs Free-Air Temperature
117
SINAD - Signal-To-Noise + Distortion - dB
95
+VA = 5 V,
+VBD = 2.7 V,
Vref = 5 V,
fs = 500 KSPS,
fi = 1.9 kHz
115
THD - Total Harmonic Distortion
+VA = 5 V,
+VBD = 2.7 V,
Vref = 5 V,
fs = 500 KSPS,
fi = 1.9 kHz
113
111
THD
109
107
105
103
-40
-25
-10
5
20 35 50 65
TA - Free-Air Temperature - °C
80
94
SINAD @ -10 dB
93
92
SINAD @ -0.5 dB
91
90
+VA = 5 V
+VBD = 2.7 V,
Vref = 5 V,
fs = 500 KSPS,
TA = 30°C
89
88
87
1
Figure 31. Total Harmonic Distortion
vs Free-Air Temperature
10
fi - Signal Input Frequency - kHz
100
Figure 32. Signal-to-Noise + Distortion
vs Signal Input Frequency
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Typical Characteristics (continued)
300000
+VA = 5 V,
+VBD = 2.7 V,
250000 Vref = 5 V,
fs = 500 KSPS,
T = 30°C
200000 A
+VA = 5 V
+VBD = 2.7 V,
Vref = 5 V,
fs = 500 KSPS,
TA = 30°C
125
115
Hits
THD - Total Harmonic Distortion - dB
135
THD @ -0.5 dB
105
95
150000
100000
THD @ -10 dB
85
50000
75
1
10
fi - Signal Input Frequency - kHz
0
100
Figure 33. Total Harmonic Distortion
vs Signal Input Frequency
0
32766
Codes
32767
Figure 34. DC Histogram of ADC Close to Center Code
3.85
0 pF
3.8
112
110
Iavdd - Supply Current - mA
THD - Total Harmonic Distortion - dB
101
32765
114
680 pF
100 pF
108
+VA = 5V, +VBD = 2.7 V,
Vref = 5 V, fi = 1.9 kHz,
fs = 500 KSPS, TA = 30°C
106
104
3.75
3.7
+VBD = 2.7 V,
Vref = 4.096 V,
fs = 500 KSPS,
TA = 30°C
3.65
3.6
3.55
3.5
3.45
102
3.4
100
0
100
200
300
400
500
3.35
4.5
600
Source Resistance - W
4.75
5
5.25
+VA - Supply Voltage - V
Figure 35. Total Harmonic Distortion vs Source Resistance
Figure 36. Supply Current vs Supply Voltage
3.9
3.7
3500
+VA = 5 V
+VBD = 2.7 V,
fs = 500 KSPS
3.6
3.5
3.4
3.3
3.2
3000
+VA = 5 V,
+VBD = 2.7 V,
TA = 30°C
2500
2000
1500
1000
500
3.1
3.0
-40
5.5
4000
Iavdd - Supply Current - mA
Iavdd - Supply Current - mA
3.8
-25 -10 5
20 35 50 65
TA - Free-Air Temperature - °C
0
0
80
Figure 37. Supply Current vs Free-Air Temperature
14
262043
100
200
300
400
fs - sampling frequency - kSPS
500
Figure 38. Supply Current vs Sampling Frequency
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Typical Characteristics (continued)
200
+VA = 5 V,
+VBD = 2.7 V,
Vref = 5 V,
TA = 30°C
18
16
Iavdd-pd - Powerdown Current - nA
Iavdd*VA - Power Dissipation - mW
20
14
12
10
8
6
4
2
180
160
140
120
100
80
60
40
20
0
0
100
200
300
400
fs - sampling frequency - kSPS
0
4.5
500
Figure 39. Power Dissipation vs Sampling Frequency
400
350
300
250
200
1
0.8
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-1
+VA = 5 V, +VBD = 2.7 V,
Vref = 5 V, fs = 500 KSPS,
TA = 30°C
0
150
10000
20000
30000
Codes
50000
60000
50
-25
-10 5
20 35
50 65
TA - Free-Air Temperature - °C
80
Figure 42. DNL
Figure 41. Power-Down Current vs Free-Air Temperature
INL
1
0.8
0.6
0.4
0.2
FFT
+VA = 5 V, +VBD = 2.7 V,
Vref = 5 V, fs = 500 KSPS,
TA = 30°C
Amplitude - dB
INL - LSB
40000
100
0
-40
0
-0.2
-0.4
-0.6
-0.8
-1
0
5.5
DNL
+VA = 5 V
+VBD = 2.7 V,
Vref = 4.096 V,
fs = 0.0 KSPS
DNL - LSB
450
5
+VA - Supply Voltage - V
Figure 40. Power-Down Current vs Supply Voltage
500
Iavdd-PD - Powerdown Current - nA
+VBD = 2.7 V,
Vref = 4.096 V,
fs = 0.0 KSPS,
TA = 30°C
10000
20000
30000
40000
50000
60000
0
-20
-40
-60
-80
+VA = 5 V, +VBD = 2.7 V,
Vref = 5 V, fi = 1.9 kHz,
fs = 500 KSPS, TA = 30°C
-100
-120
-140
-160
-180
-200
0
50000
100000
150000
200000
250000
f - Frequency - Hz
Codes
Figure 43. INL
Figure 44. FFT
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8 Detailed Description
8.1 Overview
The ADS8319 is a high-speed, low-power, successive approximation register (SAR) analog-to-digital converter
(ADC) that uses an external reference. The architecture is based on charge redistribution, which inherently
includes a sample and hold function.
The ADS8319 is a single channel device. The analog input is provided to two input pins: +IN and –IN where –IN
is a pseudo differential input and is limited to ±0.1 V. When a conversion is initiated, the differential input on
these pins is sampled on the internal capacitor array. While a conversion is in progress, both +IN and –IN inputs
are disconnected from any internal function.
The ADS8319 has an internal clock that is used to run the conversion, and hence the conversion requires a fixed
amount of time. After a conversion is completed, the device reconnects the sampling capacitors to the +IN and
–IN pins, and the device is in the acquisition phase. During this phase the device is powered down and
conversion data can be read.
The device digital output is available in SPI compatible format. It easily interfaces with microprocessors, DSPs, or
FPGAs.
This is a low pin count device; however, it offers six different options for the interface. They can be grossly
classified as CS mode (3 or 4-wire interface) and daisy chain mode. In both modes it can either be with or
without a busy indicator, where the busy indicator is a bit preceeding the 16-bit serial data.
The 3-wire interface CS mode is useful for applications which require galvanic isolation on-board, where as
4-wire interface CS mode makes it easy to control an individual device while having multiple devices on-board.
The daisy chain mode is provided to hook multiple devices in a chain like a shift register and is useful to reduce
component count and the number of signal traces on the board.
8.2 Functional Block Diagram
+VBD
+VA
SAR
O/P
Drive
COMP
I/P
Shift
Reg
IN+
CDAC
IN-
REFIN
Conversion and I/O
Control Logic
ADS8319
SDO
SDI
SCLK
CONVST
GND
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8.3 Feature Description
8.3.1 Analog Input
When the converter samples the input, the voltage difference between the +IN and –IN inputs is captured on the
internal capacitor array. The voltage on +IN is limited to GND – 0.1 V to VREF + 0.1 V and on –IN it is limited to
GND – 0.1 to GND + 0.1 V; where as the differential signal is [(+IN) – (–IN)]. This allows the input to reject small
signals which are common to both the +IN and –IN inputs.
Device in Hold Mode
218 W
+IN
55 pF
4 pF
+VA
AGND
4 pF
218 W
-IN
55 pF
Figure 45. Input Equivalent Circuit
The (peak) input current through the analog inputs depends upon a number of factors: sample rate, input
voltage, and source impedance. The current into the ADS8319 charges the internal capacitor array during the
sample period. After this capacitance has been fully charged, there is no further input current. The source of the
analog input voltage must be able to charge the input capacitance (59 pF) to a 18-bit settling level within the
minimum acquisition time. When the converter goes into hold mode, the input impedance is greater than 1 GΩ.
Take care regarding the absolute analog input voltage. To maintain linearity of the converter, the +IN and –IN
inputs and the span [(+IN) – (–IN)] must be within the limits specified. Outside of these ranges, converter linearity
may not meet specifications.
Ensure that the output impedance of the sources driving the +IN and –IN inputs are matched. If this is not
observed, the two inputs could have different settling times. This may result in an offset error, gain error, and
linearity error which change with temperature and input voltage. Typically the –IN input is grounded at the input
decoupling capacitor.
8.3.2 Driver Amplifier Choice
The analog input to the converter must be driven with a low noise op-amp like the THS4031 or OPA211. TI
recommends a 5-Ω resitor and a 1-nF capacitor as a RC filter at the input pins to low-pass filter the noise from
the source. The input to the converter is a unipolar input voltage from 0 V to VREF. The minimum –3-dB
bandwidth of the driving operational amplifier can be calculated with Equation 1.
f–3
dB
= (ln(2) × (n + 2)) / (2π × tACQ)
where
•
n is equal to 16, the resolution of the ADC (in the case of the ADS8319)
(1)
When tACQ = 600 ns (minimum acquisition time), the minimum bandwidth of the driving circuit is approximately 3
MHz (including RC following the driver OPA). The bandwidth can be relaxed if the acquisition time is increased
by the application.
Typically a low noise OPA with ten times or higher bandwidth is selected. The driving circuit bandwidth is
adjusted (to the required value) with a RC following the OPA. TI recommends the OPA211 or THS4031 for
driving high-resolution high-speed ADCs.
8.3.3 Driver Amplifier Configurations
It is better to use a unity gain, noninverting buffer configuration. As explained before a RC following the OPA
limits the input circuit bandwidth just enough for 16-bit settling. Higher bandwidth reduces the settling time
(beyond what is required) but increases the noise in the ADC sampled signal, and hence the ADC output.
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Feature Description (continued)
0-Vref
+VA
+
THS4031
or OPA211
ADS8319
5W
+IN
1nF
50 W
-IN
5W
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Figure 46. Input Drive Configuration
8.3.4 Reference
The ADS8319 can operate with an external reference from 2.25 V to +VA + 0.1 V. A clean, low noise, welldecoupled reference voltage on this pin is required to ensure good performance of the converter. A low noise
band-gap reference like the REF5040 or REF5050 can be used to drive this pin. A ceramic decoupling capacitor
is required between the REF+ and GND pins of the converter, as shown in Figure 47. The capacitor must be
placed as close as possible to the pins of the device.
50 W
REF5050
OUT
+
+
-
47 mF,
1.5 W ESR
(High ESR)
10 mF
OPA365
REFIN
TRIM
+
-
4.7 mF,
Low ESR
IN +
ADS8319
IN -
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Figure 47. External Reference Driving Circuit
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Feature Description (continued)
REF5050
OUT
+
-
22 mF
47 mF,
1.5 W ESR
(High ESR)
REFIN
TRIM
+
-
4.7 mF,
Low ESR
IN +
ADS8319
IN -
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Figure 48. Direct External Reference Driving Circuit
8.3.5 Power Saving
The ADS8319 has an auto power-down feature. The device powers down at the end of every conversion. The
input signal is acquired on sampling capacitors while the device is in the power-down state, and at the same time
the conversion results are available for reading. The device powers up by itself on the start of the conversion. As
discussed before, the conversion runs on an internal clock and takes a fixed time. As a result, device power
consumption is directly proportional to the speed of operation.
8.3.6 Digital Output
The device digital output is SPI compatible, see CS Mode for more information. Table 1 lists the output codes
corresponding to various analog input voltages.
Table 1. Output Codes
DESCRIPTION
ANALOG VALUE (V)
DIGITAL OUTPUT STRAIGHT BINARY (1)
BINARY CODE
HEX CODE
Positive full scale
+VREF – 1 LSB
1111 1111 1111 1111
FFFF
Midscale
VREF / 2
1000 0000 0000 0000
8000
Midscale – 1 LSB
VREF / 2 – 1 LSB
0111 1111 1111 1111
7FFF
Zero
0
0000 0000 0000 0000
0000
(1)
Output codes apply for Full-scale = VREF and Least-significant bit (LSB) = VREF / 65536
8.3.7 SCLK Input
The device uses SCLK for serial data output. Data is read after the conversion is over and the device is in the
acquisition phase. It is possible to use a free running SCLK for the device, but TI recommends stopping the clock
during a conversion, as the clock edges can couple with the internal analog circuit and can affect conversion
results.
8.4 Device Functional Modes
8.4.1 CS Mode
CS Mode is selected if SDI is high at the rising edge of CONVST. As indicated before there are four different
interface options available in this mode, namely 3-wire CS mode without busy indicator, 3-wire CS mode with
busy indicator, 4-wire CS mode without busy indicator, and 4-wire CS mode with busy indicator.
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Device Functional Modes (continued)
8.4.1.1 3-Wire CS Mode Without Busy Indicator
The three-wire interface option in CS mode is selected if SDI is tied to +VBD, as shown in Figure 49. In the
three-wire interface option, CONVST acts like CS. The device samples the input signal and enters the
conversion phase on the rising edge of CONVST, at the same time SDO goes to 3-state; see Figure 50.
Conversion is done with the internal clock and it continues irrespective of the state of CONVST. As a result it is
possible to bring CONVST (acting as CS) low after the start of the conversion to select other devices on the
board. But it is absolutely necessary that CONVST is high again before the minimum conversion time (tcnv) is
elapsed. A high level on CONVST at the end of the conversion ensures the device does not generate a busy
indicator.
Digital Host
ADS8319
+VBD
CONVST
CNV
SCLK
CLK
SDO
SDI
SDI
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Figure 49. Connection Diagram, 3-Wire CS Mode Without Busy Indicator (SDI = 1)
tcyc
t1
CONVST
tacq
tcnv
ACQUISITION
CONVERSION
ACQUISITION
tclkl
t2
SCLK
1
ten
2
t3
SDO
D15
16
15
tclkh
D14
tdis
tclk
D1
D0
Figure 50. Interface Timing Diagram, 3-Wire CS Mode Without Busy Indicator (SDI = 1)
When the conversion is over, the device enters the acquisition phase and powers down. On the falling edge of
CONVST, SDO comes out of three state, and the device outputs the MSB of the data. After this, the device
outputs the next lower data bits on every falling edge of SCLK. SDO goes to 3-state after the 16th falling edge of
SCLK or CONVST high, whichever occurs first. A minimum of 15 falling edges of SCLK must occur during the
low period of CONVST.
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Device Functional Modes (continued)
8.4.1.2 3-Wire CS Mode With Busy Indicator
The three-wire interface option in CS mode is selected if SDI is tied to +VBD, as shown in Figure 51. In the
three-wire interface option, CONVST acts like CS. The device samples the input signal and enters the
conversion phase on the rising edge of CONVST, at the same time SDO goes to 3-state; see Figure 52.
Conversion is done with the internal clock and it continues irrespective of the state of CONVST. As a result it is
possible to toggle CONVST (acting as CS) after the start of the conversion to select other devices on the board.
But it is absolutely necessary that CONVST is low again before the minimum conversion time (tcnv) is elapsed
and continues to stay low until the end of maximum conversion time. A low level on the CONVST input at the
end of a conversion ensures the device generates a busy indicator.
Digital Host
Device
CNV
CONVST
+VBD
SDI
SCLK
+VBD
SDO
CLK
SDI
IRQ
Figure 51. Connection Diagram, 3-Wire CS Mode With Busy Indicator
tcyc
t1
CONVST
tacq
tcnv
ACQUISITION
CONVERSION
ACQUISITION
tclkl
t2
SCLK
1
2
3
t3
SDO
D15
D14
16
tclk
D1
17
tclkh
tdis
D0
Figure 52. Interface Timing Diagram, 3-Wire CS Mode With Busy Indicator (SDI = 1)
When the conversion is over, the device enters the acquisition phase and powers down, and the device forces
SDO out of three state and outputs a busy indicator bit (low level). The device outputs the MSB of data on the
first falling edge of SCLK after the conversion is over and continues to output the next lower data bits on every
subsequent falling edge of SCLK. SDO goes to three state after the 17th falling edge of SCLK or CONVST high,
whichever occurs first. A minimum of 16 falling edges of SCLK must occur during the low period of CONVST.
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Device Functional Modes (continued)
8.4.1.3 4-Wire CS Mode Without Busy Indicator
As mentioned before for selecting CS mode it is necessary that SDI is high at the time of the CONVST rising
edge. Unlike in three-wire interface option, SDI is controlled by digital host and acts like CS. As shown in
Figure 53, SDI goes to a high level before the rising edge of CONVST. The rising edge of CONVST while SDI is
high selects CS mode, forces SDO to three state, samples the input signal, and the device enters the conversion
phase. In the 4-wire interface option CONVST must be at a high level from the start of the conversion until all of
the data bits are read. Conversion is done with the internal clock and it continues irrespective of the state of SDI.
As a result it is possible to bring SDI (acting as CS) low to select other devices on the board. But it is absolutely
necessary that SDI is high again before the minimum conversion time (tcnv) is elapsed.
CONVST
t6
SDI (CS) #1
t4
t5
SDI (CS) #2
tcnv
ACQUISITION
tacq
CONVERSION
ten
ACQUISITION
tclkl
t2
SCLK
1
ten
2
t3
SDO
D15#1
17
16
15
tclkh
tclk
D14#1
D1#1
31
18
D15#2 D14#2
D0#1
32
tdis
tdis
D1#2
D0#2
Figure 53. Interface Timing Diagram, 4-Wire CS Mode Without Busy Indicator
When the conversion is over, the device enters the acquisition phase and powers down. SDI falling edge can
occur after the maximum conversion time (tcnv). It is necessary that SDI be high at the end of the conversion, so
that the device does not generate a busy indicator. The falling edge of SDI brings SDO out of 3-state and the
device outputs the MSB of the data. Subsequent to this the device outputs the next lower data bits on every
falling edge of SCLK. SDO goes to three state after the 16th falling edge of SCLK or SDI (CS) high, whichever
occurs first. As shown in Figure 54, it is possible to hook multiple devices on the same data bus. In this case the
second device SDI (acting as CS) can go low after the first device data is read and device 1 SDO is in three
state.
CS1
CS2
CNV
CONVST
SDI
CONVST
SDO
SCLK
SDI
SDO
SDI
SCLK
CLK
ADS8319#1
ADS8319#2
Digital Host
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Figure 54. Connection Diagram, 4-Wire CS Mode Without Busy Indicator
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Device Functional Modes (continued)
Ensure that CONVST and SDI are not low together at any time during the cycle.
8.4.1.4 4-Wire CS Mode With Busy Indicator
As mentioned before for selecting CS mode it is necessary that SDI is high at the time of the CONVST rising
edge. Unlike in the three-wire interface option, SDI is controlled by the digital host and acts like CS. SDI goes to
a high level before the rising edge of CONVST; see Figure 55. The rising edge of CONVST while SDI is high
selects CS mode, forces SDO to three state, samples the input signal, and the device enters the conversion
phase. In the 4-wire interface option CONVST must be at a high level from the start of the conversion until all of
the data bits are read. Conversion is done with the internal clock and it continues irrespective of the state of SDI.
As a result it is possible to toggle SDI (acting as CS) to select other devices on the board. But it is absolutely
necessary that SDI is low before the minimum conversion time (tcnv) is elapsed and continues to stay low until
the end of the maximum conversion time. A low level on the SDI input at the end of a conversion ensures the
device generates a busy indicator.
tcyc
t6
CNVST
t5
SDI (CS) t
4
tacq
tcnv
ACQUISITION
CONVERSION
ACQUISITION
tclkh
t2
1
SCLK
2
3
t3
SDO
D15
17
16
tclkl
tdis
tclk
D14
D1
D0
Figure 55. Interface Timing Diagram, 4-Wire CS Mode With Busy Indicator
CS
SDI
CNV
CONVST
+ VBD
SDO
ADS8319
CLK
SDI
IRQ
Digital Host
Copyright © 2016, Texas Instruments Incorporated
Figure 56. Connection Diagram, 4-Wire CS Mode With Busy Indicator
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Device Functional Modes (continued)
When the conversion is over, the device enters the acquisition phase and powers down, forces SDO out of three
state, and outputs a busy indicator bit (low level). The device outputs the MSB of the data on the first falling edge
of SCLK after the conversion is over and continues to output the next lower data bits on every falling edge of
SCLK. SDO goes to three state after the 17th falling edge of SCLK or SDI (CS) high, whichever occurs first.
Ensure that CONVST and SDI are not low together at any time during the cycle.
8.4.2 Daisy-Chain Mode
Daisy chain mode is selected if SDI is low at the time of CONVST rising edge. This mode is useful to reduce
wiring and hardware like digital isolators in the applications where multiple (ADC) devices are used. In this mode
all of the devices are connected in a chain (SDO of one device connected to the SDI of the next device) and data
transfer is analogous to a shift register.
Like CS mode even this mode offers operation with or without a busy indicator.
8.4.2.1 Daisy-Chain Mode Without Busy Indicator
Figure 57 shows the connection diagram. SDI for device 1 is tied to ground, SDO of device 1 goes to SDI of
device 2, and so on. SDO of the last device in the chain goes to the digital host. CONVST for all of the devices in
the chain are tied together. In this mode there is no CS signal. The device SDO is driven low when SDI low
selects daisy chain mode and the device samples the analog input and enters the conversion phase. It is
necessary that SCLK is low at the rising edge of CONVST so that the device does not generate a busy indicator
at the end of the conversion. In this mode CONVST continues to be high from the start of the conversion until all
of the data bits are read. Once started, conversion continues irrespective of the state of SCLK.
CNV
CONVST
SDI
CONVST
SDO
SDI
SDO
SCLK
SCLK
Device 1
Device 2
SDI
CLK
Digital Host
Figure 57. Connection Diagram, Daisy-Chain Mode Without Busy Indicator (SDI = 0)
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Device Functional Modes (continued)
tcyc
t6
CONVST
tacq
tcnv
ACQUISITION
ACQUISITION
CONVERSION
t7
tclkl
t2
SCLK
1
2
tclk
#1-D15
SDO #1, SDI #2
#1-D14
17
18
#1-D15
#1-D14
16
15
t8
32
31
tclkh
#1-D1
#1-D0
#2-D1
#2-D0
t3
#2-D15
SDO #2
#2-D14
#1-D1
#1-D0
Figure 58. Interface Timing Diagram, Daisy-Chain Mode Without Busy Indicator
At the end of the conversion, every device in the chain initiates output of its conversion data starting with the
MSB bit. Further the next lower data bit is output on every falling edge of SCLK. While every device outputs its
data on the SDO pin, it also receives previous device data on the SDI pin (other than device #1) and stores it in
the shift register. The device latches incoming data on every falling edge of SCLK. SDO of the first device in the
chain goes low after the 16th falling edge of SCLK. All subsequent devices in the chain output the stored data
from the previous device in MSB first format immediately following their own data word.
It requires 16 × N clocks to read data for N devices in the chain.
8.4.2.2 Daisy-Chain Mode With Busy Indicator
Figure 59 shows the connection diagram. SDI for device 1 is wired to its CONVST and CONVST for all the
devices in the chain are wired together. SDO of device 1 goes to SDI of device 2, and so on. SDO of the last
device in the chain goes to the digital host. In this mode there is no CS signal. On the rising edge of CONVST,
all of the device in the chain sample the analog input and enter the conversion phase. For the first device, SDI
and CONVST are wired together, and the setup time of SDI to rising edge of CONVST is adjusted so that the
device still enters chain mode even though SDI and CONVST rise together. It is necessary that SCLK is high at
the rising edge of CONVST so that the device generates a busy indicator at the end of the conversion. In this
mode, CONVST continues to be high from the start of the conversion until all of the data bits are read. Once
started, conversion continues irrespective of the state of SCLK.
CNV
CONVST
SDI
CONVST
SDO
SDI
IRQ
SDO
SCLK
SCLK
Device 1
Device 2
SDI
CLK
Digital Host
Figure 59. Connection Diagram, Daisy-Mode With Busy Indicator (SDI = 0)
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Device Functional Modes (continued)
tcyc
t6
CONVST
tacq
tcnv
ACQUISITION
ACQUISITION
CONVERSION
t7
tclkl
t2
1
SCLK
2
3
16
t8
SDO #1, SDI #2
17
18
19
32
33
#1-D15
#1-D14
#1-D1
#1-D0
tclk
tclkh
#1-D15
#1-D14
#1-D1
#1-D0
#2-D1
#2-D0
t3
SDO #2
#2-D15
#2-D14
Figure 60. Interface Timing Diagram, Daisy-Chain Mode With Busy Indicator
At the end of the conversion, all the devices in the chain generate busy indicators. On the first falling edge of
SCLK following the busy indicator bit, all of the devices in the chain output their conversion data starting with the
MSB bit. After this the next lower data bit is output on every falling edge of SCLK. While every device outputs its
data on the SDO pin, it also receives the previous device data on the SDI pin (except for device 1) and stores it
in the shift register. Each device latches incoming data on every falling edge of SCLK. SDO of the first device in
the chain goes high after the 17th falling edge of SCLK. All subsequent devices in the chain output the stored
data from the pervious device in MSB first format immediately following their own data word. It requires 16 × N +
1 clock pulses to read data for N devices in the chain.
26
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
To maximize the performance of data acquisition (DAQ) system based on a high precision, successive
approximation register (SAR), analog-to-digital converter (ADC), the input driver and the reference driver circuits
must be designed properly and must be optimized. This section details some general principles for designing
these circuits, followed by an application circuit designed using the ADS8319.
9.2 Typical Application
This section describes a typical application circuit using the ADS8319. For simplicity, the power-supply circuit
and decoupling capacitors are not shown in this circuit diagram.
Copyright © 2016, Texas Instruments Incorporated
Figure 61. Unipolar Single-Ended Input DAQ System
9.2.1 Design Requirements
This application circuit for ADS8319 (as shown in Figure 61) is designed to achieve the key specific performance
at a maximum specified throughput of 500 kSPS below:
• SNR > 92 dB
• THD < 111 dB
• Lower power consumption
9.2.2 Detailed Design Procedure
The reference driver circuit illustrated in Figure 61 generates 5-V DC using a single supply. This circuit is suitable
to drive the reference at sampling rates of up to 500 kSPS. To keep the noise low and maximize the dynamic
range, a high-precision, low-noise REF5050 voltage reference is used in this DAQ system
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Typical Application (continued)
For the input driver, the distortion of the amplifier must be at least 10 dB less than the ADC distortion. The lowpower feature of ADS8319 makes it suitable for a low power DAQ system design. The THS4281 (low-power,
high-speed voltage-feedback operational amplifier) is a perfect choice for input and reference driver of ADS8319
to offer a very low quiescent current (less than 1 mA) across the supply and temperature and drive large
capacitive loads that regulate the voltage at the input and reference input pins of the ADC, its high bandwidth (40
MHz, specified at gain of 2) can make the signal settle quickly, also the Rail-to-Rail input and output feature can
maximize the dynamic range of ADC as a driver.
Finally, the components of the balanced low-pass RC filter are chosen such that the noise from the front-end
circuit is kept low without adding distortion to the input signal.
For detailed design information, see Low Power Input and Reference Driver Circuit for Reference Driver Circuit
for ADS8318 and ADS8319 (SBOA118).
9.2.3 Application Curves
This section presents the performance results obtained on several devices for the driver and shown in Figure 62
through Figure 64.
Table 2 summarizes the test results obtained for the circuit shown in Figure 61.
Table 2. Performance Results for ADS8319 DAQ System
ADS8319 DATA SHEET LIMITS
ADS8319 WITH THS4031
DNLMAX
PARAMETER
< 1.5
0.54
ADS8319 WITH THS4281
0.65
DNLMin
> –1
–0.5
–0.53
INLMAX
< 2.5
0.62
0.83
INLMIN
> –2.5
–0.95
–0.65
SNR
>92 dB
93.9 dB
92.5 dB
THD
–111 (typical)
–113 dB
–113 dB
SFDR
113 (typical)
115 dB
115 dB
SINAD
93.8 (typical)
93.8 dB
92.4 dB
—
205.6 mW
38.44 mW
Circuit power consumption
1.9-kHz input signal
Figure 62. FFT
28
Figure 63. Typical DNL Graph
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Figure 64. Typical INL Graph
10 Power Supply Recommendations
The ADS8319 is designed to operate using an analog supply voltage from 4.5 V to 5.5 V and a digital supply
voltage from 2.375 V to 5.5 V. Both supplies must be well regulated. The analog supply must always be greater
than or equal to the digital supply. A 1-µF ceramic decoupling capacitor is required at each supply pin and must
be placed as close as possible to the device.
11 Layout
11.1 Layout Guidelines
Figure 65 shows one of the board layouts as an example when using ADS8319 in a circuit.
• TI recommends a printed-circuit board (PCB) with at least four layers, and keeping all critical components on
the top layer.
• Analog input signals and the reference input signals must be kept away from noise sources. Crossing digital
lines with the analog signal path must be avoided. The analog input and the reference signals are routed on
to the left side of the board and the digital connections are routed on the right side of the device.
• Due to the dynamic currents that occur during conversion and data transfer, each supply pin (AVDD and
DVDD) must have a decoupling capacitor that keeps the supply voltage stable. TI recommends using one
1-µF ceramic capacitor at each supply pin.
• A layout that interconnects the converter and accompanying capacitors with the low inductance path is critical
for achieving optimal performance. Using 15-mil vias to interconnect components to a solid analog ground
plane at the subsequent inner layer minimizes stray inductance. Avoid placing vias between the supply pin
and the decoupling capacitor. Any inductance between the supply capacitor and the supply pin of the
converter must be kept to less than 5 nH by placing the capacitor within 0.2 inches from the supply or input
pins of the ADS8319 and by using 20-mil traces, as shown in Figure 65.
• Dynamic currents are also present at the REFIN pin during the conversion phase. Therefore, good decoupling
is critical to achieve optimal performance. The inductance between the reference capacitor and the REFIN pin
must be kept to less than 2 nH by placing the capacitor within 0.1 inches from the REFIN pin and by using
20-mil traces.
• TI recommends a single 10-µF, X7R-grade, 0805-size ceramic capacitor with at least a 10-V rating for good
performance over temperature range.
• A small, 0.1-Ω to 0.47-Ω, 0603-size resistor placed in series with the reference capacitor keeps the overall
impedance low and constant, especially at very high frequencies.
• Avoid using additional lower value capacitors because the interactions between multiple capacitors can affect
the ADC performance at higher sampling rates.
• Place the RC filters immediately next to the input pins. Among surface-mount capacitors, COG (NPO)
ceramic capacitors provide the best capacitance precision. The type of dielectric used in COG (NPO) ceramic
capacitors provides the most stable electrical properties over voltage, frequency, and temperature changes.
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R
AVDD
11.2 Layout Example
EF
GND
DVDD
REF
1: REF
Analog Input
GND
DVDD
GND
1PF
1PF
0.1O t 0.47O
AVDD
10PF
GND
47O
10: DVDD
2: AVDD
9: SDI
3: AINP
8: SCLK
4: AINN
7: SDO
5: GND
6: CONVST
47O
GND
SDO
47O
Figure 65. Board Layout Example
30
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation see the following:
Low Power Input and Reference Driver Circuit for Reference Driver Circuit for ADS8318 and ADS8319
(SBOA118)
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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7-Oct-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
ADS8319IBDGSR
ACTIVE
VSSOP
DGS
10
2500
RoHS & Green
Call TI
Level-2-260C-1 YEAR
-40 to 85
CEN
ADS8319IBDGST
ACTIVE
VSSOP
DGS
10
250
RoHS & Green
Call TI
Level-2-260C-1 YEAR
-40 to 85
CEN
ADS8319IBDRCR
ACTIVE
VSON
DRC
10
3000
RoHS & Green
Call TI
Level-3-260C-168 HR
-40 to 85
CEP
ADS8319IBDRCT
ACTIVE
VSON
DRC
10
250
RoHS & Green
Call TI
Level-3-260C-168 HR
-40 to 85
CEP
ADS8319IDGSR
ACTIVE
VSSOP
DGS
10
2500
RoHS & Green
Call TI
Level-2-260C-1 YEAR
-40 to 85
CEN
ADS8319IDGST
ACTIVE
VSSOP
DGS
10
250
RoHS & Green
Call TI
Level-2-260C-1 YEAR
-40 to 85
CEN
ADS8319IDRCT
ACTIVE
VSON
DRC
10
250
RoHS & Green
Call TI
Level-3-260C-168 HR
-40 to 85
CEP
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of