SLAS384 − JUNE 2003
FEATURES
APPLICATIONS
D DWDM
D Instrumentation
D High-Speed, High-Resolution, Zero Latency
D 2-MHz Sample Rate
D 16-Bit NMC Ensured Over Temperature
D Zero Latency
Data Acquisition Systems
D Unipolar Differential Input Range: Vref to −Vref
D Onboard Reference
D Onboard Reference Buffer
D Transducer Interface
D Medical Instruments
D Communication
D High-Speed Parallel Interface
DESCRIPTION
D Power Dissipation: 175 mW at 2 MHz Typ
The ADS8412 is a 16-bit, 2 MHz A/D converter with an
internal 4.096-V reference. The device includes a 16-bit
capacitor-based SAR A/D converter with inherent sample
and hold. The ADS8412 offers a full 16-bit interface and an
8-bit option where data is read using two 8-bit read cycles.
D Wide Digital Supply
D 8-/16-Bit Bus Transfer
D 48-Pin TQFP Package
D ESD Sensitive − HBM Capability of 500 V,
1000 V at All Input Pins
SAR
+IN
−IN
+
_
The ADS8412 has a unipolar differential input. It is
available in a 48-lead TQFP package and is characterized
over the industrial −40°C to 85°C temperature range.
Output
Latches
and
3-State
Drivers
CDAC
BYTE
16-/8-Bit
Parallel DATA
Output Bus
Comparator
RESET
REFIN
REFOUT
4.096-V
Internal
Reference
Clock
Conversion
and
Control Logic
CONVST
BUSY
CS
RD
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
!"#$ % &'!!($ #% )'*+$ ,#$(- !,'&$%
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Copyright 2003, Texas Instruments Incorporated
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SLAS384 − JUNE 2003
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during
storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
MODEL
MAXIMUM
INTEGRAL
LINEARITY
(LSB)
MAXIMUM
DIFFERENTIAL
LINEARITY (LSB)
NO MISSING
CODES
RESOLUTION
(BIT)
PACKAGE
TYPE
PACKAGE
DESIGNATOR
TEMPERATURE
RANGE
ADS8412I
−6 ~ 6
−2~+3
15
48 Pin TQFP
PFB
−40°C to
85°C
ADS8412IB
−3.5 ~ 3.5
−1~+2
16
48 Pin TQFP
PFB
−40°C to
85°C
ORDERING
INFORMATION
TRANSPORT
MEDIA
QUANTITY
ADS8412IPFBT
Tape and reel
250
ADS8412IPFBR
Tape and reel
1000
ADS8412IBPFBT
Tape and reel
250
ADS8412IBPFBR
Tape and reel
1000
NOTE: For the most current specifications and package information, refer to our website at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted(1)
Voltage
Voltage range
+IN to AGND
−0.4 V to +VA + 0.1 V
−IN to AGND
−0.4 V to +VA + 0.1 V
+VA to AGND
−0.3 V to 7 V
+VBD to BDGND
+VA to +VBD
−0.3 V to 7 V
−0.3 V to 2.55 V
Digital input voltage to BDGND
−0.3 V to +VBD + 0.3 V
Digital output voltage to BDGND
−0.3 V to +VBD + 0.3 V
Operating free-air temperature range, TA
−40°C to 85°C
Storage temperature range, Tstg
−65°C to 150°C
Junction temperature (TJ max)
Power dissipation
TQFP package
θJA thermal impedance
Vapor phase (60 sec)
Lead temperature, soldering
Infrared (15 sec)
150°C
(TJMax − TA)/θJA
86°C/W
215°C
220°C
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2
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SLAS384 − JUNE 2003
SPECIFICATIONS
TA = −40°C to 85°C, +VA = 5 V, +VBD = 3 V or 5 V, Vref = 4.096 V, fSAMPLE = 2 MHz (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Analog Input
Full-scale input voltage (see Note 1)
+IN − −IN
Absolute input voltage
Common-mode input range
+IN
−Vref
−0.2
−IN
−0.2
ADS8412I
(Vref/2) − 0.2
Input capacitance
Input leakage current
Vref
Vref + 0.2
Vref + 0.2
Vref/2
25
(Vref/2) + 0.2
V
V
V
pF
0.5
nA
16
Bits
System Performance
Resolution
No missing codes
Integral linearity
(see Notes 2 and 3)
Differential linearity
ADS8412I
15
ADS8412IB
16
−6
±4
6
−3.5
±2
3.5
ADS8412I
−2
±1
3
ADS8412IB
−1
±0.8
2
ADS8412I
ADS8412IB
ADS8412I
Offset error (see Note 4)
ADS8412IB
ADS8412I
Gain error (see Notes 4 and 5)
Common-mode rejection ratio
ADS8412IB
LSB
LSB
−3
±1
3
mV
−1.5
±0.5
1.5
mV
−0.15
0.15
−0.098
0.098
At dc (±0.2 V around Vref/2)
80
+IN − −IN = 1 Vpp at 1 MHz
80
Noise
DC Power supply rejection ratio
Bits
At 7FFFh output code,
+VA = 4.75 V to 5.25 V,
Vref = 4.096 V, See Note 4
%FS
dB
60
µV RMS
1
LSB
Sampling Dynamics
Conversion time
Acquisition time
360
100
ns
Throughput rate
Aperture delay
ns
2
MHz
2
ns
Aperture jitter
25
ps
Step response
100
ns
100
ns
Overvoltage recovery
(1) Ideal input span, does not include gain or offset error.
(2) LSB means least significant bit
(3) This is endpoint INL, not best fit
(4) Measured relative to an ideal full-scale input (+IN − −IN) of 8.192 V
(5) This specification does not include the internal reference voltage error and drift.
3
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SLAS384 − JUNE 2003
SPECIFICATIONS (CONTINUED)
TA = −40°C to 85°C, +VA = +5 V, +VBD = 3 V or 5 V, Vref = 4.096 V, fSAMPLE = 2 MHz (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Dynamic Characteristics
Total harmonic distortion (THD) (see Note 1)
Signal-to-noise ratio (SNR)
Signal-to-noise + distortion (SINAD)
Spurious free dynamic range (SFDR)
VIN = 8 Vpp at 100 kHz
VIN = 8 Vpp at 500 kHz
−95
dB
−90
dB
VIN = 8 Vpp at 100 kHz
VIN = 8 Vpp at 100 kHz
90
dB
88
dB
VIN = 8 Vpp at 100 kHz
VIN = 8 Vpp at 500 kHz
95
dB
−3dB Small signal bandwidth
93
dB
5
MHz
External Voltage Reference Input
Reference voltage at REFIN, Vref
3.9
4.096
Reference resistance (see Note 2)
4.2
500
V
kΩ
Internal Reference Output
Internal reference start-up time
From 95% (+VA), with 1 µF
storage capacity
120
4.065
4.096
ms
Vref range
Source Current
IOUT = 0
Line Regulation
+VA = 4.75 ~ 5.25 V
0.6
mV
Drift
IOUT = 0
36
PPM/C
Static load
4.13
V
10
µA
Digital Input/Output
Logic family
Logic level
CMOS
VIH
VIL
IIH = 5 µA
IIL = 5 µA
VOH
VOL
IOH = 2 TTL loads
IOL = 2 TTL loads
+VBD−1
+VBD + 0.3
−0.3
0.8
+VBD − 0.6
+VBD
0
0.4
V
2’s
Complement
Data format
Power Supply Requirements
+VBD
Power supply voltage
+VA
+VA Supply current (see Note 3)
Power dissipation (see Note 3)
2.7
3
5.25
V
4.75
5
5.25
V
fs = 2 MHz
fs = 2 MHz
35
40
mA
175
200
mW
85
°C
Temperature Range
Operating free-air
−40
(1) Calculated on the first nine harmonics of the input frequency
(2) Can vary ±20%
(3) This includes only VA+ current. +VBD current is typically 1 mA with 5 pF load capacitance on output pins.
4
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SLAS384 − JUNE 2003
TIMING CHARACTERISTICS
All specifications typical at −40°C to 85°C, +VA = +VBD = 5 V (see Notes 1, 2, and 3)
PARAMETER
MIN
TYP
MAX
UNIT
360
ns
tCONV
tACQ
Conversion time
tHOLD
tpd1
Sampling capacitor hold time
25
ns
CONVST low to BUSY high
40
ns
tpd2
tpd3
Propagation delay time, end of conversion to BUSY low
15
ns
Propagation delay time, from start of conversion (internal state) to rising edge of BUSY
15
ns
tw1
tsu1
Pulse duration, CONVST low
tw2
Pulse duration, CONVST high
Acquisition time
Setup time, CS low to CONVST low
100
20
ns
0
ns
20
CONVST falling edge jitter
tw3
tw4
th1
Pulse duration, BUSY signal low
ns
10
Min(tACQ)
Pulse duration, BUSY signal high
Hold time, first data bus data transition (RD low, or CS low for read cycle, or BYTE input
changes) after CONVST low
ns
ps
ns
360
ns
40
ns
0
ns
0
ns
td1
tsu2
Delay time, CS low to RD low
tw5
ten
Pulse duration, RD low time
td2
td3
Delay time, data hold from RD high
0
Delay time, BYTE rising edge or falling edge to data valid
2
tw6
tw7
Pulse duration, RD high
20
ns
Pulse duration, CS high time
20
ns
th2
tpd4
Hold time, last RD (or CS for read cycle ) rising edge to CONVST falling edge
50
ns
Propagation delay time, BUSY falling edge to next RD (or CS for read cycle) falling edge
0
ns
tsu3
th3
Setup time, BYTE transition to RD falling edge
0
ns
Hold time, BYTE transition to RD falling edge
0
ns
tdis
Disable time, RD high (CS high for read cycle) to 3-stated data bus
20
ns
td5
Delay time, BUSY low to MSB data valid
10
ns
tsu4
td6
Byte transition setup time, from BYTE transition to the next BYTE transition
50
ns
Delay time, CS rising edge to BUSY falling edge
50
ns
td7
Delay time, BUSY falling edge to CS rising edge
50
ns
tsu(AB)
Setup time, from the falling edge of CONVST (used to start the valid conversion) to the
next falling edge of CONVST (when CS = 0 and CONVST used to abort) or to the next
falling edge of CS (when CS is used to abort)
60
Setup time, RD high to CS high
50
Enable time, RD low (or CS low for read cycle) to data valid
ns
20
ns
ns
20
340
ns
ns
(1) All input signals are specified with tr = tf = 5 ns (10% to 90% of +VBD) and timed from a voltage level of (VIL + VIH)/2.
(2) See timing diagrams.
(3) All timings are measured with 20 pF equivalent loads on all data bits and BUSY pins.
5
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SLAS384 − JUNE 2003
TIMING CHARACTERISTICS
All specifications typical at −40°C to 85°C, +VA = 5 V, +VBD = 3 V (see Notes 1, 2, and 3)
PARAMETER
MIN
TYP
MAX
UNIT
360
ns
tCONV
tACQ
Conversion time
tHOLD
tpd1
Sampling capacitor hold time
25
ns
CONVST low to conversion started (BUSY high)
50
ns
tpd2
tpd3
Propagation delay time, end of conversion to BUSY low
25
ns
Propagation delay time, from start of conversion (internal state) to rising edge of BUSY
25
ns
tw1
tsu1
Pulse duration, CONVST low
tw2
Pulse duration, CONVST high
Acquisition time
Setup time, CS low to CONVST low
100
20
ns
0
ns
20
CONVST falling edge jitter
tw3
tw4
th1
Pulse duration, BUSY signal low
ns
10
Min(tACQ)
Pulse duration, BUSY signal high
Hold time, first data bus transition (RD low, or CS low for read cycle, or BYTE or BUS
16/16 input changes) after CONVST low
ns
ps
ns
360
ns
40
ns
0
ns
0
ns
td1
tsu2
Delay time, CS low to RD low
tw5
ten
Pulse duration, RD low
td2
td3
Delay time, data hold from RD high
0
Delay time, BYTE rising edge or falling edge to data valid
2
tw6
tw7
Pulse duration, RD high time
20
ns
Pulse duration, CS high time
20
ns
th2
tpd4
Hold time, last RD (or CS for read cycle ) rising edge to CONVST falling edge
50
ns
Propagation delay time, BUSY falling edge to next RD (or CS for read cycle) falling edge
0
ns
tsu3
th3
Setup time, BYTE transition to RD falling edge
0
ns
Hold time, BYTE transition to RD falling edge
0
ns
tdis
Disable time, RD high (CS high for read cycle) to 3-stated data bus
30
ns
td5
Delay time, BUSY low to MSB data valid delay time
10
ns
tsu4
td6
Byte transition setup time, from BYTE transition to the next BYTE transition
50
ns
Delay time, CS rising edge to BUSY falling edge
50
ns
td7
Delay time, BUSY falling edge to CS rising edge
50
ns
tsu(AB)
Setup time, from the falling edge of CONVST (used to start the valid conversion) to the
next falling edge of CONVST (when CS = 0 and CONVST used to abort) or to the next
falling edge of CS (when CS is used to abort)
70
Setup time, RD high to CS high
50
Enable time, RD low (or CS low for read cycle) to data valid
(1) All input signals are specified with tr = tf = 5 ns (10% to 90% of +VBD) and timed from a voltage level of (VIL + VIH)/2.
(2) See timing diagrams.
(3) All timings are measured with 10 pF equivalent loads on all data bits and BUSY pins.
6
ns
30
ns
ns
30
350
ns
ns
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SLAS384 − JUNE 2003
PIN ASSIGNMENTS
BUSY
BDGND
+VBD
DB0
DB1
DB2
DB3
DB4
DB5
DB6
DB7
BDGND
PFB PACKAGE
(TOP VIEW)
36 35 34 33 32 31 30 29 28 27 26 25
37
24
38
23
39
22
40
21
41
20
42
19
43
18
44
17
45
16
46
15
47
14
48
3
4 5
6 7 8
13
9 10 11 12
REFIN
REFOUT
NC
+VA
AGND
+IN
−IN
AGND
+VA
+VA
1 2
+VBD
DB8
DB9
DB10
DB11
DB12
DB13
DB14
DB15
AGND
AGND
+VA
AGND
AGND
+VBD
RESET
BYTE
CONVST
RD
CS
+VA
AGND
AGND
+VA
REFM
REFM
NC − No connection
7
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SLAS384 − JUNE 2003
TERMINAL FUNCTIONS
NAME
AGND
BDGND
NO.
I/O
5, 8, 11, 12,
14, 15, 44, 45
−
Analog ground
DESCRIPTION
25, 35
−
Digital ground for bus interface digital supply
BUSY
36
O
Status output. High when a conversion is in progress.
BYTE
39
I
Byte select input. Used for 8-bit bus reading.
0: No fold back
1: Low byte D[7:0] of the 16 most significant bits is folded back to high byte of the 16 most significant
pins DB[15:8].
CONVST
40
I
Convert start. The falling edge of this input ends the acquisition period and starts the hold period.
CS
42
I
Chip select. The falling edge of this input starts the acquisition period.
8-Bit Bus
Data Bus
BYTE = 0
16-Bit Bus
BYTE = 1
BYTE = 0
DB15
16
O
D15 (MSB)
D7
D15 (MSB)
DB14
17
O
D14
D6
D14
DB13
18
O
D13
D5
D13
DB12
19
O
D12
D4
D12
DB11
20
O
D11
D3
D11
DB10
21
O
D10
D2
D10
DB9
22
O
D9
D1
D9
DB8
23
O
D8
D0 (LSB)
D8
DB7
26
O
D7
All ones
D7
DB6
27
O
D6
All ones
D6
DB5
28
O
D5
All ones
D5
DB4
29
O
D4
All ones
D4
DB3
30
O
D3
All ones
D3
DB2
31
O
D2
All ones
D2
DB1
32
O
D1
All ones
D1
DB0
33
O
D0 (LSB)
All ones
D0 (LSB)
−IN
7
I
Inverting input channel
+IN
6
I
Non inverting input channel
NC
3
−
No connection
REFIN
1
I
Reference input
REFM
47, 48
I
Reference ground
REFOUT
2
O
Reference output. Add 1 µF capacitor between the REFOUT pin and REFM pin when internal reference
is used.
RESET
38
I
Current conversion is aborted and output latches are cleared (set to zeros) when this pin is asserted low.
RESET works independantly of CS.
RD
41
I
Synchronization pulse for the parallel output. When CS is low, this serves as the output enable and puts
the previous conversion result on the bus.
+VA
4, 9, 10, 13,
43, 46
−
Analog power supplies, 5-V dc
24, 34, 37
−
Digital power supply for bus
+VBD
8
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SLAS384 − JUNE 2003
TIMING DIAGRAMS
tw2
tw1
CONVST
tpd1
tpd2
tw4
tw3
BUSY
tsu1
CS
tpd3
CONVERT†
tHOLD
tw7
td7
td6
tCONV
tCONV
SAMPLING†
(When CS Toggle)
tACQ
BYTE
tsu(AB)
tsu(AB)
tsu4
th1
tsu2
tpd4
th2
td1
RD
tdis
ten
DB[15:8]
Hi−Z
Hi−Z
D [15:8]
DB[7:0]
Hi−Z
D [7:0]
Hi−Z
D [7:0]
†Signal internal to device
Figure 1. Timing for Conversion and Acquisition Cycles With CS and RD Toggling
9
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SLAS384 − JUNE 2003
tw1
tw2
CONVST
tpd1
tw4
tpd2
tw3
BUSY
tw7
tsu1
td7
CS
tpd3
CONVERT†
td6
tCONV
tCONV
tHOLD
SAMPLING†
(When CS Toggle)
tACQ
tsu(AB)
tsu(AB)
BYTE
tsu4
th1
tpd4
th2
RD = 0
DB[15:8]
DB[7:0]
Hi−Z
Previous
D [15:8]
Hi−Z
Previous
D [7:0]
ten
ten
tdis
Hi−Z
Hi−Z
tdis
D [15:8]
D [7:0]
D [7:0]
Hi−Z
Repeated
D [15:8]
Hi−Z
Repeated
D [7:0]
ten
†Signal internal to device
Figure 2. Timing for Conversion and Acquisition Cycles With CS Toggling, RD Tied to BDGND
10
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SLAS384 − JUNE 2003
tw1
tw2
CONVST
tpd1
tpd2
tw4
tw3
BUSY
tsu1
CS = 0
tpd3
tw7
td7
td6
CONVERT†
tCONV
tCONV
tHOLD
t(ACQ)
SAMPLING†
(When CS = 0)
tsu(AB)
tsu(AB)
BYTE
tsu4
th1
tpd4
th2
RD
tdis
ten
DB[15:8]
DB[7:0]
Hi−Z
Hi−Z
D [15:8]
D [7:0]
D [7:0]
Hi−Z
Hi−Z
†Signal internal to device
Figure 3. Timing for Conversion and Acquisition Cycles With CS Tied to BDGND, RD Toggling
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SLAS384 − JUNE 2003
tw2
tw1
CONVST
tpd1
tw4
tpd2
tw3
BUSY
CS = 0
CONVERT†
tCONV
tCONV
tpd3
tpd3
tHOLD
tHOLD
t(ACQ)
SAMPLING†
(When CS = 0)
tsu(AB)
tsu(AB)
BYTE
th1
RD = 0
tsu4
tsu4
th1
tdis
td3
td5
DB[15:8]
Previous D [7:0]
Next D [15:8]
D [7:0]
D [15:8]
DB[7:0]
Next D [7:0]
D [7:0]
†Signal internal to device
Figure 4. Timing for Conversion and Acquisition Cycles With CS and RD Tied to BDGND—Auto Read
CS
RD
tsu4
BYTE
ten
DB[15:0]
td3
tdis
tdis
ten
Hi−Z
Valid
Hi−Z
Valid
Valid
Figure 5. Detailed Timing for Read Cycles
12
Hi−Z
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SLAS384 − JUNE 2003
TYPICAL CHARACTERISTICS†
SIGNAL-TO-NOISE RATIO
vs
FREE-AIR TEMPERATURE
HISTOGRAM (DC Code Spread)
HALF SCALE 131071 CONVERSIONS
90.4
80000
+VA = 5 V,
+VBD = 3.3 V,
TA = 25°C,
Code = 65292
60000
SNR − Signal-to-Noise Ratio − dB
70000
50000
40000
30000
20000
10000
90.2
90.1
90
89.9
89.8
89.7
89.6
89.5
−40
65295
65292
65289
0
Figure 6
80
SIGNAL-TO-NOISE AND DISTORTION
vs
FREE-AIR TEMPERATURE
14.02
SINAD − Signal-to-Nois and Distortion − dB
86.2
14.015
14.01
14.005
14
13.995
fi = 50 kHz,
+VA = 5 V,
+VBD = 3.3 V,
TA = 25°C,
Internal
Reference
13.99
13.985
13.98
−40
−20
0
20
40
60
TA − Free-Air Temperature − °C
Figure 7
EFFECTIVE NUMBER OF BITS
vs
FREE-AIR TEMPERATURE
ENOB − Effective Number of Bits − Bits
fi = 50 kHz,
+VA = 5 V,
+VBD = 3.3 V,
TA = 25°C,
Internal
Reference
90.3
−20
0
20
40
60
TA − Free-Air Temperature − °C
Figure 8
80
86.15
86.1
86.05
fi = 50 kHz,
+VA = 5 V,
+VBD = 3.3 V,
Internal
Reference
86
85.95
85.9
−40
−20
0
20
40
60
TA − Free-Air Temperature − °C
80
Figure 9
† At −40°C to 85°C, +VA = 5 V, +VBD = 5 V, REFIN = 4.096 V (internal reference used) and fsample = 2 MHz (unless otherwise noted)
13
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SLAS384 − JUNE 2003
TOTAL HARMONIC DISTORTION
vs
FREE-AIR TEMPERATURE
SPURIOUS FREE DYNAMIC RANGE
vs
FREE-AIR TEMPERATURE
−93.8
fi = 100 kHz,
+VA = 5 V,
+VBD = 3.3 V,
Internal
Reference
100.5
100
fi = 100 kHz,
+VA = 5 V,
+VBD = 3.3 V,
Internal
Reference
−94
THD − Total Harmonic Distortion − dB
SFDR − Spurious Free Dynamic Range − dB
101
99.5
99
98.5
98
97.5
97
−94.2
−94.4
−94.6
−94.8
−95
−95.2
−95.4
−95.6
96.5
−40
−20
0
20
40
60
TA − Free-Air Temperature − °C
−95.8
−40
80
−20
0
20
40
60
TA − Free-Air Temperature − °C
Figure 10
Figure 11
EFFECTIVE NUMBER OF BITS
vs
INPUT FREQUENCY
SIGNAL-TO-NOISE RATIO
vs
INPUT FREQUENCY
14.45
+VA = 5 V,
+VBD = 3.3 V,
TA = 25°C,
Internal
Reference
91
90.8
ENOB − Effective Number of Bits − Bits
SNR − Signal-to-Noise Ratio − dB
91.2
90.6
90.4
90.2
90
89.8
+VA = 5 V,
+VBD = 3.3 V,
TA = 25°C,
Internal
Reference
14.4
14.35
14.3
14.25
14.2
14.15
14.1
14.05
14
13.95
13.9
0
20
40
60
80
fi − Input Frequency − kHz
Figure 12
14
80
100
0
20
40
60
80
fi − Input Frequency − kHz
Figure 13
100
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SIGNAL-TO-NOISE AND DISTORTION
vs
INPUT FREQUENCY
SPURIOUS FREE DYNAMIC RANGE
vs
INPUT FREQUENCY
103
+VA = 5 V,
+VBD = 3.3 V,
TA = 25°C,
Internal
Reference
88.5
88
SFDR − Spurious Free Dynamic Range − dB
SINAD − Signal-to-Nois and Distortion − dB
89
87.5
87
86.5
86
85.5
0
20
40
60
80
fi − Input Frequency − kHz
102
101
100
99
98
97
96
100
+VA = 5 V,
+VBD = 3.3 V,
TA = 25°C,
Internal
Reference
0
20
40
60
80
fi − Input Frequency − kHz
Figure 14
Figure 15
TOTAL HARMONIC DISTORTION
vs
INPUT FREQUENCY
SUPPLY CURRENT
vs
SAMPLE RATE
−93
−95
33.5
ICC − Supply Current − mA
THD − Total Harmonic Distortion − dB
34
+VA = 5 V,
+VBD = 3.3 V,
TA = 25°C,
Internal
Reference
−94
100
−96
−97
−98
−99
33
+VA = 5 V,
+VBD = 3.3 V,
TA = 25°C,
Internal
Referance
32.5
32
31.5
31
30.5
−100
30
−101
−102
29.5
0
20
40
60
80
fi − Input Frequency − kHz
Figure 16
100
29
500
1000
1500
Samply Rate − KSPS
2000
Figure 17
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GAIN ERROR
vs
SUPPLY VOLTAGE (VA+)
OFFSET ERROR
vs
SUPPLY VOLTAGE (VA+)
0.6
0.14
+VBD = 3.3 V,
TA = 25°C,
External
Reference
0.12
EO − Offset Error − mV
E G − Gain Error − mV
0.5
0.4
0.3
0.2
0.1
0
4.75
0.10
0.08
0.06
0.04
+VBD = 3.3 V,
TA = 25°C,
External
Reference
0.02
4.85
4.95
5.05
5.15
VDD − Supply Voltage − V
0
4.75
5.25
4.85
Figure 18
5.05
5.15
5.25
Figure 19
INTERNAL VOLTAGE REFERENCE
vs
FREE-AIR TEMPERATURE
GAIN ERROR
vs
FREE-AIR TEMPERATURE
1
4.091
+VA = 5 V,
+VBD = 3.3 V
4.090
+VA = 5 V,
+VBD = 3.3 V,
External
Reference
0.8
0.6
E G − Gain Error − mV
Internal Voltage Reference − V
4.95
VDD − Supply Voltage − V
4.089
4.088
4.087
0.4
0.2
0
−0.2
−0.4
4.086
−0.6
4.085
−0.8
4.084
−40
−20
0
20
40
60
TA − Free-Air Temperature − °C
Figure 20
16
80
−1
−40
−20
0
20
40
60
TA − Free-Air Temperature − °C
Figure 21
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SLAS384 − JUNE 2003
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
OFFSET ERROR
vs
FREE-AIR TEMPERATURE
34.8
0.1
+VA = 5 V,
+VBD = 3.3 V,
External
Reference
EO − Offset Error − mV
0.06
0.04
0.02
0
−0.02
−0.04
34.4
34.2
34
33.8
33.6
33.4
−0.06
33.2
−0.08
−0.1
−40
−20
0
20
40
60
TA − Free-Air Temperature − °C
33
−40
80
Figure 22
80
INTEGRAL NONLINEARITY
vs
FREE-AIR TEMPERATURE
2
1.5
Max
INL − Integral Nonlinearity − LSBs
DNL − Differential Nonlinearity − LSBs
−20
0
20
40
60
TA − Free-Air Temperature − °C
Figure 23
DIFFERENTIAL NONLINEARITY
vs
FREE-AIR TEMPERATURE
+VA = 5 V,
+VBD = 3.3 V,
Internal
Reference
1
0.5
0
−0.5
Min
−1
−1.5
−40
+VA = 5 V,
+VBD = 3.3 V
34.6
ICC − Supply Current − mA
0.08
−20
0
20
40
60
TA − Free-Air Temperature − °C
Figure 24
80
1.5
Max
1
+VA = 5 V,
+VBD = 3.3 V,
Internal
Reference
0.5
0
−0.5
−1
−1.5
−2
−40
Min
−20
0
20
40
60
TA − Free-Air Temperature − °C
80
Figure 25
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SLAS384 − JUNE 2003
DNL
4
DNL − LSBs
3
2
1
0
−1
−2
−3
−4
0
16384
32768
49152
65536
Code
Figure 26
INL − LSBs
INL
3
2.5
2
1.5
1
0.5
0
−0.5
−1
−1.5
−2
−2.5
−3
0
16384
32768
49152
65536
Code
Figure 27
Magnitude − dB
FFT
0
−20
−40
−60
−80
−100
−120
−140
−160
−180
−200
0
100
200
300
400
500
600
Frequency − kHz
Figure 28
18
700
800
900
1000
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SLAS384 − JUNE 2003
APPLICATION INFORMATION
MICROCONTROLLER INTERFACING
ADS8412 to 8-Bit Microcontroller Interface
Figure 29 shows a parallel interface between the ADS8412 and a typical microcontroller using the 8-bit data bus.
The BUSY signal is used as a falling-edge interrupt to the microcontroller.
Analog 5 V
0.1 µF
AGND
10 µF
−IN
REFM
AGND
+IN
Analog Input
+VA
REFIN
Micro
Controller
Ext Ref Input
0.1 µF
1 µF
Digital 3 V
GPIO
ADS8412
CS
BYTE
GPIO
P[7:0]
DB[15:8]
RD
CONVST
BUSY
RD
GPIO
INT
0.1 µF
BDGND
BDGND
+VBD
Figure 29. ADS8412 Application Circuitry (using external reference)
Analog 5 V
0.1 µF
AGND
10 µF
0.1 µF
AGND
REFM
REFIN
REFOUT
+VA
1 µF
AGND
ADS8412
Figure 30. Use Internal Reference
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PRINCIPLES OF OPERATION
The ADS8412 is a high-speed successive approximation register (SAR) analog-to-digital converter (ADC). The
architecture is based on charge redistribution, which inherently includes a sample/hold function. See Figure 29 for
the application circuit for the ADS8412.
The conversion clock is generated internally. The conversion time of 360 ns is capable of sustaining a 2-MHz
throughput.
The analog input is provided to two input pins: +IN and −IN. When a conversion is initiated, the differential input on
these pins is sampled on the internal capacitor array. While a conversion is in progress, both inputs are disconnected
from any internal function.
REFERENCE
The ADS8412 can operate with an external reference with a range from 3.9 V to 4.2 V. A 4.096-V internal reference
is included. When internal reference is used, pin 2 (REFOUT) should be connected to pin 1 (REFIN) with an 0.1 µF
decoupling capacitor and 1 µF storage capacitor between pin 2 (REFOUT) and pins 47 and 48 (REFM) (see Figure
33). The internal reference of the converter is double buffered. If an external reference is used, the second buffer
provides isolation between the external reference and the CDAC. This buffer is also used to recharge all of the
capacitors of the CDAC during conversion. Pin 2 (REFOUT) can be left unconnected (floating) if external reference
is used.
ANALOG INPUT
When the converter enters the hold mode, the voltage difference between the +IN and −IN inputs is captured on the
internal capacitor array. Both +IN and −IN input has a range of –0.2 V to Vref + 0.2 V. The input span
(+IN − (−IN)) is limited to −Vref to Vref.
The input current on the analog inputs depends upon a number of factors: sample rate, input voltage, and source
impedance. Essentially, the current into the ADS8412 charges the internal capacitor array during the sample period.
After this capacitance has been fully charged, there is no further input current. The source of the analog input voltage
must be able to charge the input capacitance (25 pF) to an 16-bit settling level within the acquisition time (100 ns)
of the device. When the converter goes into the hold mode, the input impedance is greater than 1 GΩ.
Care must be taken regarding the absolute analog input voltage. To maintain the linearity of the converter, the +IN
and −IN inputs and the span (+IN − (−IN)) should be within the limits specified. Outside of these ranges, the
converter’s linearity may not meet specifications. To minimize noise, low bandwidth input signals with low-pass filters
should be used.
Care should be taken to ensure that the output impedance of the sources driving +IN and −IN inputs are matched.
If this is not observed, the two inputs could have different setting time. This may result in offset error, gain error and
linearity error which varies with temperature and input voltage.
A typical input circuit using TI’s THS4503 is shown Figure 31. Input from a single-ended source may be converted
into differential signal for ADS8412 as shown in the figure. In case the source itself is differential then THS4503 may
be used in differential input and differential output mode.
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SLAS384 − JUNE 2003
68 pF
RS
RG
RT
50 Ω
1 kΩ
VCC+
+ _
20 pF
THS4503
IN−
ADS8412
_ +
+
_
IN+
OCM
VCC−
1 kΩ
RG, RS, and RT should be chosen such that
RG + RS || RT = 1 k Ω
VOCM = 2 V, +VCC = 7 V, and −VCC = −7 V
1 kΩ
50 Ω
68 pF
Figure 31. Using THS4503 With ADS8412
DIGITAL INTERFACE
Timing And Control
See the timing diagrams in the specifications section for detailed information on timing signals and their requirements.
The ADS8412 uses an internal oscillator generated clock which controls the conversion rate and in turn the
throughput of the converter. No external clock input is required.
Conversions are initiated by bringing the CONVST pin low for a minimum of 20 ns (after the 20 ns minimum
requirement has been met, the CONVST pin can be brought high), while CS is low. The ADS8412 switches from the
sample to the hold mode on the falling edge of the CONVST command. A clean and low jitter falling edge of this signal
is important to the performance of the converter. The BUSY output is brought high after CONVST goes low. BUSY
stays high throughout the conversion process and returns low when the conversion has ended.
Sampling starts with the falling edge of the BUSY signal when CS is tied low or starts with the falling edge of CS when
BUSY is low.
Both RD and CS can be high during and before a conversion with one exception (CS must be low when CONVST
goes low to initiate a conversion). Both the RD and CS pins are brought low in order to enable the parallel output bus
with the conversion.
Reading Data
The ADS8412 outputs full parallel data in two’s complement format as shown in Table 1. The parallel output is active
when CS and RD are both low. There is a minimal quiet zone requirement around the falling edge of CONVST. This
is 50 ns prior to the falling edge of CONVST and 40 ns after the falling edge. No data read should be attempted within
this zone. Any other combination of CS and RD sets the parallel output to 3-state. BYTE is used for multiword read
operations. BYTE is used whenever lower bits of the conversion result are output on the higher byte of the bus. Refer
to Table 1 for ideal output codes.
Table 1. Ideal Input Voltages and Output Codes
DESCRIPTION
Full Scale Range
Least significant bit (LSB)
+Full scale
ANALOG VALUE
2(+Vref)
2(+Vref)/65536
DIGITAL OUTPUT
TWOS COMPLEMENT
BINARY CODE
HEX CODE
(+Vref) − 1 LSB
0V
0111 1111 1111 1111
7FFF
Midscale
0000 0000 0000 0000
0000
Midscale − 1 LSB
0 V − 1 LSB
1111 1111 1111 1111
FFFF
−Full scale
(−Vref)
1000 0000 0000 0000
8000
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The output data is a full 16-bit word (D15−D0) on DB15–DB0 pins (MSB−LSB) if BYTE is low.
The result may also be read on an 8-bit bus for convenience. This is done by using only pins DB15−DB8. In this case
two reads are necessary: the first as before, leaving BYTE low and reading the 8 most significant bits on pins
DB15−DB8, then bringing BYTE high. When BYTE is high, the low bits (D7−D0) appears on pins DB15−D8.
These multiword read operations can be done with multiple active RD (toggling) or with RD tied low for simplicity.
Table 2. Conversion Data Readout
DATA READ OUT
BYTE
DB15−DB8 Pins
DB7−DB0 Pins
High
D7−D0
All one’s
Low
D15−D8
D7−D0
RESET
RESET is an asynchronous active low input signal (that works independantly of CS). Minimum RESET low time is
25 ns. Current conversion will be aborted no later than 50 ns after the converter is in the reset mode. In addition, all
output latches are cleared (set to zero’s) after RESET. The converter goes back to normal operation mode no later
than 20 ns after RESET input is brought high.
The converter starts the first sampling period 20 ns after the rising edge of RESET. Any sampling period except for
the one immediately after a RESET is started with the falling edge of the previous BUSY signal or the falling edge
of CS, whichever is later.
Another way to reset the device is through the use of the combination of CS and CONVST. This is useful when the
dedicated RESET pin is tied to the system reset but there is a need to abort only the conversion in a specific converter.
Since the BUSY signal is held high during the conversion, either one of these conditions triggers an internal self-clear
reset to the converter just the same as a reset via the dedicated RESET pin. The reset does not have to be cleared
as for the dedicated RESET pin. A reset can be started with either of the two following steps.
D Issue a CONVST when CS is low and a conversion is in progress. The falling edge of CONVST must satisfy the
timing as specified by the timing parameter tsu(AB) mentioned in the timing characteristics table to ensure a reset.
The falling edge of CONVST starts a reset. Timing is the same as a reset using the dedicated RESET pin except
the instance of the falling edge is replaced by the falling edge of CONVST.
D Issue a CS while a conversion is in progress. The falling edge of CS must satisfy the timing as specified by the
timing parameter tsu(AB) mentioned in the timing characteristics table to ensure a reset. The falling edge of
CONVST starts a reset. The falling edge of CS causes a reset. Timing is the same as a reset using the dedicated
RESET pin except the instance of the falling edge is replaced by the falling edge of CS.
POWER-ON INITIALIZATION
RESET is not required after power on. An internal power-on reset circuit generates the reset. To ensure that all of
the registers are cleared, three conversion cycles must be given to the converter after power on.
LAYOUT
For optimum performance, care should be taken with the physical layout of the ADS8412 circuitry.
As the ADS8412 offers single-supply operation, it is often used in close proximity with digital logic, microcontrollers,
microprocessors, and digital signal processors. The more digital logic present in the design and the higher the
switching speed, the more difficult it is to achieve good performance from the converter.
The basic SAR architecture is sensitive to glitches or sudden changes on the power supply, reference, ground
connections and digital inputs that occur just prior to latching the output of the analog comparator. Thus, driving any
single conversion for an n-bit SAR converter, there are at least n windows in which large external transient voltages
can affect the conversion result. Such glitches might originate from switching power supplies, nearby digital logic,
or high power devices.
The degree of error in the digital output depends on the reference voltage, layout, and the exact timing of the external
event.
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On average, the ADS8412 draws very little current from an external reference, as the reference voltage is internally
buffered. If the reference voltage is external and originates from an op amp, make sure that it can drive the bypass
capacitor or capacitors without oscillation. A 0.1-µF bypass capacitor and 1-µF storage capacitor are recommended
from pin 1 (REFIN) directly to pin 48 (REFM). REFM and AGND should be shorted on the same ground plane under
the device.
The AGND and BDGND pins should be connected to a clean ground point. In all cases, this should be the analog
ground. Avoid connections which are close to the grounding point of a microcontroller or digital signal processor. If
required, run a ground trace directly from the converter to the power supply entry point. The ideal layout consists of
an analog ground plane dedicated to the converter and associated analog circuitry.
As with the AGND connections, +VA should be connected to a 5-V power supply plane or trace that is separate from
the connection for digital logic until they are connected at the power entry point. Power to the ADS8412 should be
clean and well bypassed. A 0.1-µF ceramic bypass capacitor should be placed as close to the device as possible.
See Table 3 for the placement of the capacitor. In addition, a 1-µF to 10-µF capacitor is recommended. In some
situations, additional bypassing may be required, such as a 100-µF electrolytic capacitor or even a Pi filter made up
of inductors and capacitors—all designed to essentially low-pass filter the 5-V supply, removing the high frequency
noise.
Table 3. Power Supply Decoupling Capacitor Placement
POWER SUPPLY PLANE
SUPPLY PINS
CONVERTER ANALOG SIDE
CONVERTER DIGITAL SIDE
Pin pairs that require shortest path to decoupling capacitors
(4,5), (8,9), (10,11), (13,15),
(43,44), (45,46)
(24,25), (34, 35)
Pins that require no decoupling
12, 14
37
23
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