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ADS8555SPMR

ADS8555SPMR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    LQFP64

  • 描述:

    IC ADC 16BIT SAR 64LQFP

  • 数据手册
  • 价格&库存
ADS8555SPMR 数据手册
Sample & Buy Product Folder Support & Community Tools & Software Technical Documents Reference Design ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 ADS8555 16-Bit, Six-Channel, Simultaneous Sampling Analog-to-Digital Converter 1 Features 3 Description • • The ADS8555 device contains six low-power, 16-bit, successive approximation register (SAR)-based analog-to-digital converters (ADCs) with true bipolar inputs. Each channel contains a sample-and-hold circuit that allows simultaneous high-speed multichannel signal acquisition. 1 • • • • • • • • Six SAR ADCs Grouped in Three Pairs Maximum Data Rate Per Channel With Internal Clock and Reference: 630 kSPS (Parallel) or 450 kSPS (Serial) Maximum Data Rate Per Channel With External Clock and Reference: 800 kSPS (Parallel) or 500 kSPS (Serial) Pin-Selectable or Programmable Input Voltage Ranges: Up to ±12 V Excellent AC Performance: 91.5-dB SNR, –94-dB THD Programmable and Buffered Internal Reference: 0.5 V to 2.5 V and 0.5 V to 3 V Comprehensive Power-Down Modes: – Deep Power Down (Standby Mode) – Auto-Nap Power Down Selectable Parallel or Serial Interface Operating Temperature Range: –40°C to 125°C LQFP-64 Package The ADS8555 device supports data rates of up to 630 kSPS in parallel interface mode or up to 450 kSPS if the serial interface is used. The bus width of the parallel interface can be set to eight or 16 bits. In serial mode, up to three output channels can be activated. The ADS8555 device is specified over the extended industrial temperature range of –40°C to 125°C and is available in an LQFP-64 package. Device Information(1) PART NUMBER ADS8555 Block Diagram HVDD Power Quality Measurements Protection Relays Multi-Axis Motor Controls Programmable Logic Controllers Industrial Data Acquisition CH_A0 AGND Signal-to-Noise Ratio (dB) 92 CONVST_B 90 REFC_B CH_B1 AGND 88 86 84 CH_C0 AGND 82 CONVST_C 80 72 BVDD SAR ADC Control Logic REFC_A CH_A1 AGND CH_B0 AGND 74 AVDD CONVST_A 94 76 HVSS Clock Generator SNR vs Temperature 78 BODY SIZE (NOM) 10.00 mm × 10.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. 2 Applications • • • • • PACKAGE LQFP (64) SAR ADC SAR ADC Config Register SAR ADC SAR ADC CS/FS RD DB[15:0] WORD/BYTE PAR/SER I/O REFC_C CH_C1 AGND AVDD = BVDD = 5V HVSS = -15V, HVDD = 15V fSIGNAL = 10kHz, fDATA = Max Range = ±4 ´ VREF Internal Reference BUSY/INT RANGE/XCLK HW/SW REFEN/WR STBY RESET SAR ADC String DAC REF_IO 2.5V/3V REF 70 -40 -25 -10 5 20 35 50 65 Temperature (°C) 80 95 110 125 AGND BGND 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com Table of Contents 1 2 3 4 5 6 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 6 6.1 6.2 6.3 6.4 6.5 6.6 6.7 Absolute Maximum Ratings ...................................... 6 ESD Ratings.............................................................. 7 Recommended Operating Conditions....................... 7 Thermal Information .................................................. 7 Electrical Characteristics........................................... 8 Serial Interface Timing Requirements..................... 11 Parallel Interface Timing Requirements (Read Access) .................................................................... 11 6.8 Parallel Interface Timing Requirements (Write Access) .................................................................... 11 6.9 Typical Characteristics ............................................ 14 7 Detailed Description ............................................ 19 7.1 Overview ................................................................. 19 7.2 7.3 7.4 7.5 8 Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ Register Maps ......................................................... 19 20 25 29 Applications and Implementation ...................... 31 8.1 Application Information............................................ 31 8.2 Typical Application .................................................. 31 9 Power Supply Recommendations...................... 35 10 Layout................................................................... 35 10.1 Layout Guidelines ................................................. 35 10.2 Layout Example .................................................... 36 11 Device and Documentation Support ................. 37 11.1 11.2 11.3 11.4 11.5 Documentation Support ....................................... Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 37 37 37 37 37 12 Mechanical, Packaging, and Orderable Information ........................................................... 37 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision C (October 2015) to Revision D • Changed Figure 36: changed capacitor values from 820 nF to 820 pF .............................................................................. 32 Changes from Revision B (February 2011) to Revision C • Page Page Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ................................................................................................. 1 Changes from Revision A (January 2011) to Revision B Page • Changed description of pin 18 in Pin Descriptions table........................................................................................................ 5 • Added clarification of INT in BUSY/INT section ................................................................................................................... 23 • Updated Table 4 ................................................................................................................................................................... 28 • Changed bit C20 in Table 5.................................................................................................................................................. 30 Changes from Original (December 2010) to Revision A Page • Changed description of CONVST_C, CONVST_B, and CONVST_A pins in Pin Descriptions table .................................... 5 • Changed description of CONVST_x section ........................................................................................................................ 22 • Changed first paragraph of BUSY/INT section..................................................................................................................... 23 2 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 5 Pin Configuration and Functions DB15 REFEN/WR HW/SW PAR/SER AVDD AGND REFC_C AGND REFC_B AGND REFC_A AGND AGND REFIO AVDD AGND PM Package 64-Pin LQFP Top View 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 DB14/REFBUFEN 1 48 CH_C1 DB13/SDI 2 47 AVDD DB12 3 46 AVDD DB11 4 45 CH_C0 DB10/SDO_C 5 44 AGND DB9/SDO_B 6 43 AGND DB8/SDO_A 7 42 CH_B1 BGND 8 BVDD 9 ADS8555 41 AVDD 40 AVDD DB7/HBEN/DCEN 10 39 CH_B0 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 RESET WORD/BYTE HVSS HVDD AGND 33 CH_A0 RANGE/XCLK DB1/SEL_B 16 AVDD 34 AVDD AGND DB2/SEL_C 15 STBY 35 AVDD CONVST_A DB3/DCIN_C 14 CONVST_B 36 CH_A1 CONVST_C DB4/DCIN_B 13 RD 37 AGND CS/FS DB5/DCIN_A 12 BUSY/INT 38 AGND DB0/SEL_A DB6/SCLK 11 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 3 ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com Pin Functions PIN NAME NO. DB14/REFBUFEN 1 DESCRIPTION TYPE (1) DIO/DI PARALLEL INTERFACE (PAR/SER = 0) Data bit 14 input/output SERIAL INTERFACE (PAR/SER = 1) Hardware mode (HW/SW = 0): Reference buffers enable input. When low, all reference buffers are enabled (mandatory if internal reference is used). When high, all reference buffers are disabled. Software mode (HW/SW = 1):Connect to BGND or BVDD. The reference buffers are controlled by bit C24 (REFBUF) in control register (CR). Hardware mode (HW/SW = 0): Connect to BGND DB13/SDI 2 DIO/DI Data bit 13 input/output DB12 3 DIO Data bit 12 input/output Connect to BGND DB11 4 DIO Data bit 11 input/output Connect to BGND DB10/SDO_C 5 DIO/DO Data bit 10 input/output When SEL_C = 1, data output for channel C When SEL_C = 0, tie this pin to BGND DB9/SDO_B 6 DIO/DO Data bit 9 input/output When SEL_B = 1, data output for channel B When SEL_B = 0, tie this pin to BGND When SEL_C = 0, data from channel C1 are also available on this output Data bit 8 input/output Data output for channel A When SEL_C = 0, data from channel C0 are also available on this output When SEL_C = 0 and SEL_B = 0, SDO_A acts as the single data output for all channels Software mode (HW/SW = 1): Serial data input DB8/SDO_A 7 DIO/DO BGND 8 P Buffer I/O ground, connect to digital ground plane BVDD 9 P Buffer I/O supply, connect to digital supply (2.7 V to 5.5 V). Decouple with a 1-μF ceramic capacitor or a combination of 100-nF and 10-μF ceramic capacitors to BGND. Word mode (WORD/BYTE = 0): Data bit 7 input/output DB7/HBEN/DCEN 10 DIO/DI/DI DB6/SCLK 11 DIO/DI DB5/DCIN_A 12 DIO/DI DB4/DCIN_B DB3/DCIN_C DB2/SEL_C DB1/SEL_B (1) 4 13 14 15 16 DIO/DI DIO/DI DIO/DI DIO/DI Byte mode (WORD/BYTE = 1): High byte enable input. When high, the high byte is output first on DB[15:8]. When low, the low byte is output first on DB[15:8]. Word mode (WORD/BYTE = 0): Data bit 6 input/output Byte mode (WORD/BYTE = 1): Connect to BGND or BVDD Word mode (WORD/BYTE = 0): Data bit 5 input/output Byte mode (WORD/BYTE = 1): Connect to BGND or BVDD Word mode (WORD/BYTE = 0): Data bit 4 input/output Byte mode (WORD/BYTE = 1): Connect to BGND or BVDD Word mode (WORD/BYTE = 0): Data bit 3 input/output Byte mode (WORD/BYTE = 1): Connect to BGND or BVDD Word mode (WORD/BYTE = 0): Data bit 2 input/output Byte mode (WORD/BYTE = 1): Connect to BGND or BVDD Word mode (WORD/BYTE = 0): Data bit 1 input/output Byte mode (WORD/BYTE = 1): Connect to BGND or BVDD Daisy-chain enable input. When high, DB[5:3] serve as daisy-chain inputs DCIN[A:C]. If daisy-chain mode is not used, connect to BGND. Serial interface clock input (36 MHz, max) When DCEN = 1, daisy-chain data input for channel A When DCEN = 0, connect to BGND When SEL_B = 1 and DCEN = 1, daisy-chain data input for channel B When DCEN = 0, connect to BGND When SEL_C = 1 and DCEN = 1, daisy-chain data input for channel C When DCEN = 0, connect to BGND Select SDO_C input. When high, SDO_C is active. When low, SDO_C is disabled. Select SDO_B input. When high, SDO_B is active. When low, SDO_B is disabled. AI = analog input; AIO = analog input/output; DI = digital input; DO = digital output; DIO = digital input/output; and P = power supply. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 Pin Functions (continued) PIN NAME DB0/SEL_A NO. 17 TYPE (1) DIO/DI BUSY/INT 18 DO CS/FS 19 DI/DI RD 20 DI CONVST_C CONVST_B 21 22 DI DI DESCRIPTION PARALLEL INTERFACE (PAR/SER = 0) Word mode (WORD/BYTE = 0): Data bit 0 (LSB) input/output Byte mode (WORD/BYTE = 1): Connect to BGND or BVDD SERIAL INTERFACE (PAR/SER = 1) Select SDO_A input. When high, SDO_A is active. When low, SDO_A is disabled. Must always be high. When CR bit C21 = 0 (BUSY/INT), converter busy status output. Transitions high when a conversion starts and remains high during the entire process. Transitions low when the conversion data of all six channels are latched to the output register and remains low thereafter. In sequential mode (SEQ = 1 in the CR), the BUSY output transitions high when a conversion starts and goes low for a single conversion clock cycle (tCCLK) whenever a channel pair conversion completes. When bit C21 = 1 (BUSY/INT in CR), interrupt output. This bit transitions high after a conversion completes and goes low with the first read data access. The polarity of BUSY/INT output can be changed using bit C20 (BUSY L/H) in the control register. Chip select input. When low, the parallel interface is enabled. When high, the interface is disabled. Frame synchronization. The falling edge of FS controls the frame transfer. Read data input. When low, the parallel data output is enabled. When high, the data output is disabled. Connect to BGND Hardware mode (HW/SW = 0): Conversion start of channel pair C. The rising edge of this signal initiates simultaneous conversion of analog signals at inputs CH_C[1:0]. Software mode (HW/SW = 1): Conversion start of channel pair C in sequential mode (CR bit C23 = 1) only; connect to BGND or BVDD otherwise Hardware mode (HW/SW = 0): Conversion start of channel pair B. The rising edge of this signal initiates simultaneous conversion of analog signals at inputs CH_B[1:0]. Software mode (HW/SW = 1): Conversion start of channel pair B in sequential mode (CR bit C23 = 1) only; connect to BGND or BVDD otherwise Hardware mode (HW/SW = 0): Conversion start of channel pair A. The rising edge of this signal initiates simultaneous conversion of analog signals at inputs CH_A[1:0]. CONVST_A 23 DI STBY 24 DI Standby mode input. When low, the entire device is powered down (including the internal clock and reference). When high, the device operates in normal mode. AGND 25, 32, 37, 38, 43, 44, 49, 52, 53, 55, 57, 59 P Analog ground, connect to analog ground plane Pin 25 can have a dedicated ground if the difference between its potential and AGND is always kept within ±300 mV. AVDD 26, 34, 35, 40, 41, 46, 47, 50, 60 P Analog power supply (4.5 V to 5.5 V). Decouple each pin with a 100-nF ceramic capacitor to AGND. Use an additional 10-μF capacitor to AGND close to the device but without compromising the placement of the smaller capacitor. Pin 26 can have a dedicated power supply if the difference between its potential and AVDD is always kept within ±300 mV. RANGE/XCLK 27 DI/DIO RESET 28 DI Reset input, active high. Aborts any ongoing conversions. Resets the internal control register to 0x000003FF. The RESET pulse must be at least 50 ns long. Software mode (HW/SW = 1): Conversion start of all selected channels except in sequential mode (CR bit C23 = 1): Conversion start of channel pair A only Hardware mode (HW/SW = 0): Input voltage range select input. When low, the analog input range is ±4 VREF. When high, the analog input range is ±2 VREF. Software mode (HW/SW = 1): External conversion clock input, if CR bit C11 (CLKSEL) is set high or internal conversion clock output, if CR bit C10 (CLKOUT_EN) is set high. If not used, connect to BVDD or BGND. WORD/BYTE 29 DI Output mode selection input. When low, data are transferred in word mode using DB[15:0]. When high, data are transferred in byte Connect to BGND mode using DB[15:8] with the byte order controlled by HBEN pin when two accesses are required for a complete 16-bit transfer. HVSS 30 P Negative supply voltage for the analog inputs (–16.5 V to –5 V). Decouple with a 10-0nF ceramic capacitor to AGND placed next to the device and a 10-μF capacitor to AGND close to the device but without compromising the placement of the smaller capacitor. HVDD 31 P Positive supply voltage for the analog inputs (5 V to 16.5 V). Decouple with a 100-nF ceramic capacitor to AGND placed next to the device and a 10-μF capacitor to AGND close to the device but without compromising the placement of the smaller capacitor. CH_A0 33 AI Analog input of channel A0. The input voltage range is controlled by RANGE pin in hardware mode or CR bit C26 (RANGE_A) in software mode. CH_A1 36 AI Analog input of channel A1. The input voltage range is controlled by RANGE pin in hardware mode or CR bit C26 (RANGE_A) in software mode. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 5 ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com Pin Functions (continued) PIN NAME NO. DESCRIPTION TYPE (1) PARALLEL INTERFACE (PAR/SER = 0) SERIAL INTERFACE (PAR/SER = 1) CH_B0 39 AI Analog input of channel B0. The input voltage range is controlled by RANGE pin in hardware mode or CR bit C27 (RANGE_B) in software mode. CH_B1 42 AI Analog input of channel B1. The input voltage range is controlled by RANGE pin in hardware mode or CR bit C27 (RANGE_B) in software mode. CH_C0 45 AI Analog input of channel C0. The input voltage range is controlled by RANGE pin in hardware mode or CR bit C28 (RANGE_C) in software mode. CH_C1 48 AI Analog input of channel C1. The input voltage range is controlled by RANGE pin in hardware mode or CR bit C28 (RANGE_C) in software mode. REFIO 51 AIO Reference voltage input/output (0.5 V to 3.025 V). The internal reference is enabled through REFEN/WR pin in hardware mode or CR bit C25 (REFEN) in software mode. The output value is controlled by the internal DAC (CR bits C[9:0]). Connect a 470-nF ceramic decoupling capacitor between this pin and pin 52. REFC_A 54 AI Decoupling capacitor for reference of channels A. Connect a 10-μF ceramic decoupling capacitor between this pin and pin 53. REFC_B 56 AI Decoupling capacitor for reference of channels B. Connect a 10-μF ceramic decoupling capacitor between this pin and pin 55. REFC_C 58 AI Decoupling capacitor for reference of channels C. Connect a 10-μF ceramic decoupling capacitor between this pin and pin 57. PAR/SER 61 DI Interface mode selection input. When low, the parallel interface is selected. When high, the serial interface is enabled. HW/SW 62 DI Mode selection input. When low, the hardware mode is selected and the device works according to the settings of external pins. When high, the software mode is selected in which the device is configured by writing into the control register. REFEN/WR DB15 63 64 DI DIO Hardware mode (HW/SW = 0): Internal reference enable input. When high, the internal reference is enabled (the reference buffers are to be enabled). When low, the internal reference is disabled and an external reference is applied at REFIO. Hardware mode (HW/SW = 0): Internal reference enable input. When high, the internal reference is enabled (the reference buffers are to be enabled). When low, the internal reference is disabled and an external reference must be applied at REFIO. Software mode (HW/SW = 1): Write input. The parallel data input is enabled when CS and WR are low. The internal reference is enabled by the CR bit C25 (REFEN). Software mode (HW/SW = 1): Connect to BGND or BVDD. The internal reference is enabled by CR bit C25 (REFEN). Data bit 15 (MSB) input/output Connect to BGND 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT –0.3 18 V Supply voltage, HVSS to AGND –18 0.3 V Supply voltage, AVDD to AGND –0.3 6 V Supply voltage, BVDD to BGND –0.3 6 V Analog input voltage HVSS – 0.3 HVDD + 0.3 V Reference input voltage with respect to AGND AGND – 0.3 AVDD + 0.3 V Digital input voltage with respect to BGND BGND – 0.3 BVDD + 0.3 V Supply voltage, HVDD to AGND Ground voltage difference AGND to BGND Input current to all pins except supply –10 Maximum virtual junction temperature, TJ Storage temperature, Tstg (1) 6 –65 ±0.3 V 10 mA 150 °C 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±500 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions MIN NOM MAX 4.5 5 5.5 Low-voltage levels 2.7 3 3.6 5-V logic levels 4.5 5 5.5 Supply voltage, AVDD to AGND Supply voltage, BVDD to BGND Input supply voltage, HVDD to AGND Input supply voltage, HVSS to AGND Input range = ±2 × VREF 2 × VREF 16.5 Input range = ±4 × VREF 4 × VREF 16.5 Input range = ±2 × VREF –16.5 –2 × VREF Input range = ±4 × VREF –16.5 –4 × VREF Input range = ±2 × VREF –2 × VREF 2 × VREF Input range = ±4 × VREF –4 × VREF 4 × VREF –40 125 Reference input voltage (VREF) Analog inputs (also see the Analog Inputs section) 0.5 Operating ambient temperature, TA 2.5 3 UNIT V V V V V V °C 6.4 Thermal Information ADS8555 THERMAL METRIC (1) PM (LQFP) UNIT 64 PINS RθJA Junction-to-ambient thermal resistance 48 °C/W RθJC(top) Junction-to-case (top) thermal resistance 16 °C/W RθJB Junction-to-board thermal resistance N/A °C/W ψJT Junction-to-top characterization parameter N/A °C/W ψJB Junction-to-board characterization parameter N/A °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 7 ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com 6.5 Electrical Characteristics over recommended operating free-air temperature range of –40°C to 125°C, AVDD = 4.5 V to 5.5 V, BVDD = 2.7 V to 5.5 V, HVDD = 10 V to 15 V, HVSS = –15 V to –10 V, VREF = 2.5 V (internal), and fDATA = maximum (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT DC ACCURACY Resolution 16 No missing codes Bits 16 Integral linearity error INL Differential linearity error DNL Bits At TA = –40°C to 85°C –3 ±1.5 3 At TA = –40°C to 125°C –4 ±1.5 4 At TA = –40°C to 85°C –1 ±0.75 1.5 At TA = –40°C to 125°C –1 ±0.75 2 –4 ±0.8 4 Offset error Offset error drift mV Gain error Referenced to voltage at REFIO Gain error drift Referenced to voltage at REFIO ±6 ppm/°C At output code FFFFh, related to AVDD 60 dB Power-supply rejection ratio PSRR ±0.25 LSB μV/°C ±3.5 –0.75 LSB 0.75 %FSR SAMPLING DYNAMICS Acquisition time tACQ Conversion time per ADC tCONV Internal conversion clock period tCCLK Throughput rate fDATA 280 ns 1.26 μs 18.5 tCCLK 68 Parallel interface, internal clock and reference 630 Serial interface, internal clock and reference 450 ns kSPS AC ACCURACY Signal-to-noise ratio SNR Signal-to-noise ratio + distortion SINAD Total harmonic distortion (2) THD Spurious-free dynamic range SFDR Channel-to-channel isolation At fIN = 10 kHz, TA = –40°C to 85°C 90 91.5 At fIN = 10 kHz, TA = –40°C to 125°C 89 91.5 87 89.5 86.5 89.5 At fIN = 10 kHz, TA = –40°C to 85°C At fIN = 10 kHz, TA = –40°C to 125°C dB At fIN = 10 kHz, TA = –40°C to 85°C –94 –90 At fIN = 10 kHz, TA = –40°C to 125°C –94 –89.5 At fIN = 10 kHz, TA = –40°C to 85°C At fIN = 10 kHz, TA = –40°C to 125°C 90 95 89.5 95 At fIN = 10 kHz –3-dB small-signal bandwidth dB dB 100 Input range = ±4 × VREF 48 Input range = ±2 × VREF 24 dB dB MHz ANALOG INPUT Bipolar full-scale range CHXX Input capacitance Input leakage current RANGE pin, RANGE bit = 0 –4 × VREF 4 × VREF RANGE pin, RANGE bit = 1 –2 × VREF 2 × VREF Input range = ±4 × VREF 10 Input range = ±2 × VREF 20 No ongoing conversion Aperture delay matching pF ±1 Aperture delay Common CONVST for all channels Aperture jitter V μA 5 ns 250 ps 50 ps EXTERNAL CLOCK INPUT (XCLK) External clock frequency fXCLK An external reference must be used for fXCLK > fCCLK External clock duty cycle (1) (2) 8 1 45% 18 20 MHz 55% All values are at TA = 25°C. Calculated on the first nine harmonics of the input frequency. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 Electrical Characteristics (continued) over recommended operating free-air temperature range of –40°C to 125°C, AVDD = 4.5 V to 5.5 V, BVDD = 2.7 V to 5.5 V, HVDD = 10 V to 15 V, HVSS = –15 V to –10 V, VREF = 2.5 V (internal), and fDATA = maximum (unless otherwise noted) MIN TYP (1) MAX 2.5-V operation, REFDAC = 0x3FF 2.485 2.5 2.515 2.5-V operation, REFDAC = 0x3FF at 25°C 2.496 2.5 2.504 3-V operation, REFDAC = 0x3FF 2.985 3 3.015 3-V operation, REFDAC = 0x3FF at 25°C 2.995 3 3.005 PARAMETER TEST CONDITIONS UNIT REFERENCE VOLTAGE OUTPUT (REFOUT) Reference voltage VREF Reference voltage drift dVREF/dT Power-supply rejection ratio PSRR Output current IREFOUT Short circuit current (3) IREFSC 50 mA Turnon settling time tREFON 10 ms μF External load capacitance Tuning range REFDAC ±10 V ppm/°C 73 With dc current 2 At CREF_x pins 4.7 10 At REFIO pins 100 470 Internal reference output voltage range REFDAC resolution dB –2 nF 0.2 × VREF VREF 10 REFDAC differential nonlinearity DNLDAC REFDAC integral nonlinearity INLDAC REFDAC offset error VOSDAC –1 VREF = 0.5 V (DAC = 0x0CC) mA V Bits ±0.1 1 LSB –2 ±0.1 2 LSB –4 ±0.65 4 LSB 2.5 3.025 REFERENCE VOLTAGE INPUT (REFIN) Reference input voltage VREFIN 0.5 Input resistance 100 Input capacitance V MΩ 5 pF Reference input current 1 μA SERIAL CLOCK INPUT (SCLK) Serial clock input frequency fSCLK 0.1 36 MHz Serial clock period tSCLK 0.0278 10 μs 40% 60% Serial clock duty cycle DIGITAL INPUTS (4) Logic family CMOS with Schmitt-Trigger High-level input voltage 0.7 × BVDD BVDD + 0.3 Low-level input voltage BGND – 0.3 0.3 × BVDD V –50 50 nA Input current VI = BVDD to BGND Input capacitance 5 V pF DIGITAL OUTPUTS (4) Logic family CMOS High-level output voltage IOH = 100 μA Low-level output voltage IOH = –100 μA High-impedance-state output current Output capacitance BVDD BGND BGND + 0.4 V –50 50 nA 5 Load capacitance (3) (4) BVDD – 0.6 V pF 30 pF Reference output current is not limited internally. Specified by design. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 9 ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com Electrical Characteristics (continued) over recommended operating free-air temperature range of –40°C to 125°C, AVDD = 4.5 V to 5.5 V, BVDD = 2.7 V to 5.5 V, HVDD = 10 V to 15 V, HVSS = –15 V to –10 V, VREF = 2.5 V (internal), and fDATA = maximum (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT POWER-SUPPLY REQUIREMENTS Analog supply voltage AVDD 4.5 5 5.5 V Buffer I/O supply voltage BVDD 2.7 3 5.5 V Input positive supply voltage HVDD 5 10 16.5 V Input negative supply voltage HVSS –16.5 –10 –5 V fDATA = maximum 30 36 fDATA = 250 kSPS (auto-NAP mode) 14 16.5 4 6 Power-down mode 0.1 50 fDATA = maximum 0.9 2 fDATA = 250 kSPS (auto-NAP mode) 0.5 1.5 Auto-NAP mode, no ongoing conversion, internal conversion clock 0.1 10 Power-down mode 0.1 10 Analog supply current (5) Buffer I/O supply current IAVDD (6) IBVDD Auto-NAP mode, no ongoing conversion, internal conversion clock fDATA = maximum Input positive supply current (7) Input negative supply current (8) IHVDD IHVSS Power dissipation (9) (5) (6) (7) (8) (9) 10 3 3.5 fDATA = 250 kSPS (auto-NAP mode) 1.6 2 Auto-NAP mode, no ongoing conversion, internal conversion clock 0.2 0.3 Power-down mode 0.1 10 fDATA = maximum 3.6 4 fDATA = 250 kSPS (auto-NAP mode) 1.8 2.2 Auto-NAP mode, no ongoing conversion, internal conversion clock 0.2 0.25 Power-down mode 0.1 10 fDATA = maximum 251.7 298.5 fDATA = 250 kSPS (auto-NAP mode) 122.5 150 Auto-NAP mode, no ongoing conversion, internal conversion clock 26 38.3 Power-down mode 3.8 580 mA μA mA μA mA μA mA μA mW μW At AVDD = 5 V. At BVDD = 3 V, parallel mode, load capacitance = 6 pF per pin. At HVDD = 15 V. At HVSS = –15 V. At AVDD = 5 V, BVDD = 3 V, HVDD = 15 V, and HVSS = –15 V. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 6.6 Serial Interface Timing Requirements over recommended operating free-air temperature range at –40°C to 125°C, AVDD = 5 V, and BVDD = 2.7 V to 5.5 V (unless otherwise noted) (1) MIN MAX Acquisition time tCONV Conversion time t1 CONVST_x low time t2 BUSY low to FS low time t3 Bus access finished to next conversion start time tD1 CONVST_x high to BUSY high delay 5 20 ns tD2 FS low to SDO_x active delay 5 12 ns tD3 SCLK rising edge to new data valid delay 15 ns tD4 FS high to SDO_x 3-state delay 10 ns tH1 Input data to SCLK falling edge hold time 5 ns tH2 Output data to SCLK rising edge hold time 5 ns tS1 Input data to SCLK falling edge setup time 3 ns tS3 CONVST_x high to XCLK falling or rising edge setup time 6 tSCLK Serial clock period (1) 280 UNIT tACQ ns 1.26 µs 20 ns 0 ns 40 ns 0.0278 ns 10 μs All input signals are specified with tR = tF = 1.5 ns (10% to 90% of BVDD) and timed from a voltage level of (VIL + VIH) / 2. 6.7 Parallel Interface Timing Requirements (Read Access) over recommended operating free-air temperature range at –40°C to 125°C, AVDD = 5 V, and BVDD = 2.7 V to 5.5 V (unless otherwise noted) (1) MIN tACQ Acquisition time tCONV Conversion time t1 CONVST_x low time t2 BUSY low to CS low time t3 Bus access finished to next conversion start time (2) t4 t5 t6 MAX UNIT 1.26 µs 280 ns 20 ns 0 ns 40 ns CS low to RD low time 0 ns RD high to CS high time 0 ns RD pulse width 30 ns t7 Minimum time between two read accesses 10 ns tD1 CONVST_x high to BUSY high delay tD5 RD falling edge to output data valid delay tH3 Output data to RD rising edge hold time (1) (2) 5 20 ns 20 ns 5 ns All input signals are specified with tR = tF = 1.5 ns (10% to 90% of BVDD) and timed from a voltage level of (VIL + VIH) / 2. Refer to the CS signal or RD, whichever occurs first. 6.8 Parallel Interface Timing Requirements (Write Access) over recommended operating free-air temperature range at –40°C to 125°C, AVDD = 5 V, and BVDD = 2.7 V to 5.5 V (unless otherwise noted) (1) MIN MAX UNIT t8 CS low to WR low time 0 ns t9 WR low pulse duration 15 ns t10 WR high pulse duration 10 ns t11 WR high to CS high time 0 ns tS2 Output data to WR rising edge setup time 5 ns tH4 Data output to WR rising edge hold time 5 ns (1) All input signals are specified with tR = tF = 1.5 ns (10% to 90% of BVDD) and timed from a voltage level of (VIL + VIH) / 2. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 11 ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com XCLK (C11 = 1) tS3 tS3 t1 CONVST_x tACQ tCONV tD1 BUSY (C20 = C21 = 0) t3 t2 FS tSCLK 32 1 SCLK tD3 tD4 tD2 ADS8556 SDO_x tH2 CH_x1 D3 CH_x0 MSB tS1 SDI or DCIN_x D31 Don’t Care D3 CH_x1 D2 tH1 CH_x1 D1 CH_x1 LSB D2 D1 D0 Don’t Care Figure 1. Serial Operation Timing Diagram (All Three SDOs Active) t1 CONVST_A CONVST_B CONVST_C tCONV tACQ tD1 BUSY (C20 = C21 = 0) t3 t2 CS t4 t6 t5 t7 RD tD5 CH A0 DB[15:0] CH A1 CH B0 CH B1 tH3 CH C0 CH C1 Figure 2. Parallel Read Access Timing Diagram 12 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 CS t9 t10 t11 t8 WR tS2 tH4 DB[15:0] C [31:16] C [15:0] Word Mode (WORD/BYTE = 0) Don’t Care C [31:24] C [23:16] C [15:8] C [7:0] Byte Mode (WORD/BYTE = 1) Figure 3. Parallel Write Access Timing Diagram Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 13 ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com 6.9 Typical Characteristics 3.0 3.0 2.5 2.5 2.0 2.0 Integral Nonlinearity (LSB) Integral Nonlinearity (LSB) at 25°C, over entire supply voltage range, VREF = 2.5 V (internal), and fDATA = maximum (unless otherwise noted) 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.0 -2.5 -2.5 -3.0 -3.0 0 0 8190 16380 24570 32760 40950 49140 57330 65520 8190 16380 24570 32760 40950 49140 57330 65520 Code Code Figure 4. INL vs Code (±10-VIN Range) Figure 5. INL vs Code (±5-VIN Range) 1.5 Differential Nonlinearity (LSB) Differential Nonlinearity (LSB) 1.5 1.0 0.5 0 -0.5 1.0 0.5 0 -0.5 -1.0 -1.0 0 0 8190 16380 24570 32760 40950 49140 57330 65520 8190 16380 24570 32760 40950 49140 57330 65520 Code Code Figure 6. DNL vs Code (±10-VIN Range) Figure 7. DNL vs Code (±5-VIN Range) 4 0.75 3 0.50 Gain Error (%) Offset Error (mV) 2 1 0 -1 0.25 0 -0.25 -2 -0.50 -3 -0.75 -4 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 Temperature (°C) 20 35 50 65 80 95 110 125 Temperature (°C) Figure 8. Offset Error vs Temperature 14 5 Submit Documentation Feedback Figure 9. Gain Error vs Temperature Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 Typical Characteristics (continued) at 25°C, over entire supply voltage range, VREF = 2.5 V (internal), and fDATA = maximum (unless otherwise noted) 1.40 1.35 -40 Conversion Time (ms) Power-Supply Rejection Ratio (dB) -30 -50 -60 -70 1.30 1.25 1.20 1.15 1.10 1.05 1.00 -80 0.95 -90 0.90 0 20 40 60 80 100 120 140 160 180 -40 -25 -10 200 5 5500 94 5000 92 4500 90 4000 3500 3000 2500 2000 1500 1000 95 110 125 84 82 80 AVDD = BVDD = 5V HVSS = -15V, HVDD = 15V fSIGNAL = 10kHz, fDATA = Max Range = ±4 ´ VREF Internal Reference 78 76 74 -2 -1 0 1 -40 -25 -10 2 5 20 35 50 65 80 95 110 125 Temperature (°C) Figure 12. Code Histogram (8192 Hits) Figure 13. SNR vs Temperature 94 -86 AVDD = BVDD = 5V, HVSS = -15V, HVDD = 15V fSIGNAL = 10kHz, fDATA = Max, Range = ±4 ´ VREF Internal Reference 92 Total Harmonic Distortion (dB) Signal-to-Noise Ratio and Distortion (dB) 80 86 Code 90 88 86 84 82 80 72 65 70 -3 74 50 88 72 500 76 35 Figure 11. Conversion Time vs Temperature Signal-to-Noise Ratio (dB) Number of Occurrences Figure 10. PSRR vs AVDD Noise Frequency 78 20 Temperature (°C) AVDD Noise Frequency (kHz) AVDD = BVDD = 5V HVSS = -15V, HVDD = 15V fSIGNAL = 10kHz, fDATA = Max Range = ±4 ´ VREF Internal Reference -88 -90 -92 -94 -96 -98 70 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 20 35 50 65 80 95 Temperature (°C) Temperature (°C) Figure 14. SINAD vs Temperature Figure 15. THD vs Temperature 110 125 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 15 ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com Typical Characteristics (continued) at 25°C, over entire supply voltage range, VREF = 2.5 V (internal), and fDATA = maximum (unless otherwise noted) 0 -20 98 -40 96 Amplitude (dB) Spurious-Free Dynamic Range (dB) 100 94 92 AVDD = BVDD = 5V HVSS = -15V, HVDD = 15V fSIGNAL = 10kHz, fDATA = Max Range = ±4 ´ VREF Internal Reference 90 88 5 20 35 50 65 80 95 -80 -100 -120 -140 -160 86 -40 -25 -10 -60 -180 110 125 0 25 50 75 Temperature (°C) 100 125 150 175 200 225 250 Frequency (kHz) fIN = 10 kHz Figure 17. Frequency Spectrum (2048-Point FFT, ±10-VIN Range) 0 120 -20 115 -40 110 -60 Isolation (dB) Amplitude (dB) Figure 16. SFDR vs Temperature -80 -100 -120 105 100 95 90 -140 85 -160 80 -180 0 25 50 75 100 125 150 175 200 225 250 30 0 60 90 Frequency (kHz) 120 150 180 210 240 270 300 Noise Frequency (kHz) fIN = 10 kHz Figure 19. Channel-to-Channel Isolation vs Input Noise Frequency 2.504 2.504 2.503 2.503 2.502 2.502 2.501 VREF (V) VREF (V) Figure 18. Frequency Spectrum (2048-Point FFT, ±5-VIN Range) VREF 2.500 2.501 2.500 2.499 2.499 2.498 2.498 2.497 2.497 2.496 2.496 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 -40 -25 -10 Figure 20. Internal Reference Voltage vs Analog Supply Voltage (2.5-V Mode) 16 5 20 35 50 65 80 95 110 125 Temperature (°C) AVDD (V) Figure 21. Internal Reference Voltage vs Temperature (2.5-V Mode) Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 Typical Characteristics (continued) at 25°C, over entire supply voltage range, VREF = 2.5 V (internal), and fDATA = maximum (unless otherwise noted) 3.005 3.004 3.003 IAVDD (mA) VREF (V) 3.002 3.001 3.000 2.999 2.998 2.997 2.996 2.995 -40 -25 -10 5 20 35 50 65 80 95 36 34 32 30 28 26 24 22 20 18 16 14 12 10 110 125 fDATA = Max fDATA = 250kSPS (A-NAP) -40 -25 -10 5 20 Temperature (°C) A-NAP Mode 1.4 1.2 fDATA = Max 1.0 0.8 0.6 fDATA = 250kSPS (A-NAP) 0.4 0.2 -40 -25 -10 45 90 135 180 225 270 315 360 405 450 495 540 585 630 5 20 35 50 65 80 95 110 125 Temperature (°C) Figure 24. Analog Supply Current vs Data Rate Figure 25. Buffer I/O Supply Current vs Temperature 4.5 IHVSS (fDATA = Max) 4.0 3.50 Input Supply Current (mA) Input Supply Current (mA) 110 125 1.6 4.00 IHVDD (fDATA = Max) 2.75 2.50 2.25 IHVSS (250kSPS A-NAP) 1.75 1.50 95 1.8 Sample Rate (kSPS) 2.00 80 Normal Operation 0 3.00 65 2.0 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 3.25 50 Figure 23. Analog Supply Current vs Temperature IBVDD (mA) IAVDD (mA) Figure 22. Internal Reference Voltage vs Temperature (3-V Mode) 3.75 35 Temperature (°C) IHVDD (250kSPS A-NAP) IHVSS (fDATA = Max) 3.5 3.0 IHVDD (fDATA = Max) 2.5 2.0 1.5 1.0 IHVSS (250kSPS A-NAP) 0.5 1.25 IHVDD (250kSPS A-NAP) 0 1.00 -40 -25 -10 5 20 35 50 65 80 95 110 125 5 6 7 8 9 10 11 12 13 14 15 HVDD, |HVSS| (V) Temperature (°C) Figure 26. Input Supply Current vs Temperature Figure 27. Input Supply Current vs Input Supply Voltage Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 17 ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com Typical Characteristics (continued) at 25°C, over entire supply voltage range, VREF = 2.5 V (internal), and fDATA = maximum (unless otherwise noted) 3.6 IHVSS 3.3 3.0 IHVSS (A-NAP) IHVxx (mA) 2.7 2.4 2.1 IHVDD (A-NAP) 1.8 1.5 IHVDD 1.2 0.9 0.6 0.3 0 0 90 180 270 360 450 540 630 Data Rate (kSPS) Figure 28. Input Supply Current vs Data Rate 18 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 7 Detailed Description 7.1 Overview The ADS8555 device includes six 16-bit analog-to-digital converters (ADCs) that operate based on the successive approximation register (SAR) principle. The architecture is designed on the charge redistribution principle that inherently includes a sample-and-hold function. The six analog inputs are grouped into three channel pairs. These channel pairs can be sampled and converted simultaneously, preserving the relative phase information of the signals of each pair. Separate conversion start signals allow simultaneous sampling on each channel pair, on four channels or on all six channels. These devices accept single-ended, bipolar analog input signals in the selectable ranges of ±4 VREF or ±2 VREF with an absolute value of up to ±12 V; see the Analog Inputs section for more details. The devices offer an internal 2.5-V, 3-V reference source followed by a 10-bit, digital-to-analog converter (DAC) that allows the reference voltage VREF to be adjusted in 2.44-mV or 2.93-mV steps, respectively. The ADS8555 device also offers a selectable parallel or serial interface that can be used in hardware or software mode; see the Device Configuration section for details. 7.2 Functional Block Diagram HVDD HVSS AVDD BVDD Clock Generator CH_A0 AGND SAR ADC CONVST_A Control Logic REFC_A CH_A1 AGND SAR ADC CH_B0 AGND BUSY/INT RANGE/XCLK HW/SW REFEN/WR STBY RESET SAR ADC CONVST_B Config Register REFC_B CH_B1 AGND SAR ADC CH_C0 AGND SAR ADC CONVST_C CS/FS RD DB[15:0] WORD/BYTE PAR/SER I/O REFC_C CH_C1 AGND SAR ADC String DAC REF_IO AGND 2.5V/3V REF BGND Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 19 ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com 7.3 Feature Description 7.3.1 Analog This section addresses the analog input circuit, the ADCs and control signals, and the reference design of the device. 7.3.1.1 Analog Inputs The inputs and the converters are of the single-ended, bipolar type. The absolute voltage range can be selected using the RANGE pin (in hardware mode) or RANGE_x bits (in software mode) in the control register (CR, see Table 5) to either ±4 VREF or ±2 VREF. With the reference set to 2.5 V (CR bit C18 = 0), the input voltage range can be ±10 V or ±5 V. With the reference source set to 3 V (CR bit C18 = 1), an input voltage range of ±12 V or ±6 V can be configured. The logic state of the RANGE pin is latched with the falling edge of BUSY (if CR bit C20 = 0). The input current on the analog inputs depends on the actual sample rate, input voltage, and signal source impedance. Essentially, the current into the analog inputs charges the internal capacitor array only during the sampling period (tACQ). The source of the analog input voltage must be able to charge the input capacitance of 10 pF in ±4-VREF mode or 20 pF in ±2-VREF mode to a 12-, 14-, 16-bit accuracy level within the acquisition time of 280 ns at maximum data rate, as shown in Figure 29. Input range: ±2VREF RSER = 200W Input range: ±4VREF RSW = 130W RSER = 200W CH_XX RSW = 130W CH_XX CS = 20pF CS = 10pF VDC CPAR = 5pF CPAR = 5pF VDC CS = 20pF AGND CS = 10pF AGND RSER = 200W RSW = 130W RSER = 200W RSW = 130W Figure 29. Equivalent Input Circuits During the conversion period, there is no further input current flow and the input impedance is greater than 1 MΩ. To ensure a defined start condition, the sampling capacitors of the ADS8555 device are precharged to a fixed internal voltage, before switching into sampling mode. To maintain the linearity of the converter, the inputs must always remain within the specified range of HVSS – 0.2 V to HVDD + 0.2 V. The minimum –3-dB bandwidth of the driving operational amplifier can be calculated using Equation 1: ln(2) ´ (n + 1) f-3dB = 2p ´ tACQ where • n = 16 (n is the resolution of the device) (1) With a minimum acquisition time of tACQ = 280 ns, the required minimum bandwidth of the driving amplifier is 6.7 MHz. The required bandwidth can be lower if the application allows a longer acquisition time. A gain error occurs if a given application does not fulfill the bandwidth requirement shown in Equation 1. 20 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 Feature Description (continued) A driving operational amplifier may not be required if the impedance of the signal source (RSOURCE) fulfills the requirement of Equation 2: tACQ RSOURCE < - (RSER + RSW) CS ln(2) ´ (n + 1) where • • • • n = 16 (n is the resolution of the ADC) CS = 10 pF is the sample capacitor value for VIN = ±4 × VREF mode RSER = 200 Ω is the input resistor value RSW = 130 Ω is the switch resistance value (2) With tACQ = 280 ns, the maximum source impedance must be less than 2 kΩ in VIN = ±4-VREF mode or less than 0.9 kΩ in VIN = ±2-VREF mode. The source impedance can be higher if the application allows longer acquisition time. 7.3.1.2 Analog-to-Digital Converter (ADC) The devices include six ADCs that operate with either an internal or an external conversion clock. The conversion time is 1.26 μs with the internal conversion clock. When an external clock and reference are used, the minimum conversion time is 925 ns. 7.3.1.3 Conversion Clock The device uses either an internally-generated or an external (XCLK) conversion clock signal (in software mode only). In default mode, the device generates an internal clock. When the CLKSEL bit is set high (bit C11 in Table 5), an external conversion clock of up to 20 MHz (maximum) can be applied on pin 27. In both cases, 18.5 clock cycles are required for a complete conversion including the precharging of the sample capacitors. The external clock can remain low between conversions. The conversion clock duty cycle must be 50%. However, the ADS8555 device functions properly with a duty cycle from 45% to 55%. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 21 ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com Feature Description (continued) 7.3.1.4 CONVST_x The analog inputs of each channel pair (CH_x0, CH_x1) are held with the rising edge of the corresponding CONVST_x signal. Only in software mode (except sequential mode), CONVST_A is used for all six ADCs. The conversion automatically starts with the next edge of the conversion clock. A conversion start must not be issued during an ongoing conversion on the same channel pair. However, conversions are allowed to be initiated on other input pairs; see the Sequential Mode section for more details. If a parallel interface is used, the behavior of the output port depends on which CONVST_x signals are issued. Figure 30 shows examples of different scenarios. BUSY (C20 = C21 = 0) CS CONVST_A CONVST_C CONVST_B RD DB[15:0] CH A0 CH A1 CH C0 CH C1 CH A0 CH A1 CH C0 CH B0 CH B1 CH B0 CH B1 CH B0 CH B1 CH B0 CONVST_B CONVST_A CONVST_B RD DB[15:0] NOTE: Boxed areas indicate the minimum required frame to acquire all data. Figure 30. Data Output vs CONVST_x 22 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 Feature Description (continued) 7.3.1.5 BUSY/INT The BUSY signal indicates if a conversion is in progress. The BUSY signal goes high with a rising edge of any CONVST_x signal and goes low when the output data of the last channel pair are available in the respective output register. The readout of the data can be initiated immediately after the falling edge of BUSY. In sequential mode, the BUSY signal goes low only for one clock cycle; see the Sequential Mode section for more details. The INT output goes high at completion of a conversion process and remains high after first read data access. The polarity of the BUSY/INT signal can be changed using Table 5 bit C20. 7.3.1.6 Reference The ADS8555 device provides an internal, low-drift, 2.5-V reference source. To increase the input voltage range, the reference voltage can be switched to 3-V mode using the VREF bit (bit C18 in the CR). The reference feeds a 10-bit string-DAC controlled by bits C[9:0] in the control register. The buffered DAC output is connected to the REFIO pin. In this way, the voltage at this pin is programmable in 2.44 mV (2.92 mV in 3-V mode) steps and adjustable to the application needs without additional external components. The actual output voltage can be calculated using Equation 3: Range ´ (Code + 1) VREF = 1024 where • • Range = the chosen maximum reference voltage output range (2.5 V or 3 V) Code = the decimal value of the DAC register content (3) Table 1 lists some examples of internal reference DAC settings with a reference range set to 2.5 V. However, to ensure proper performance, the DAC output voltage should not be programmed below 0.5 V. Decouple the buffered output of the DAC with a 100-nF capacitor (minimum); for best performance, TI recommends a 470-nF capacitor. If the internal reference is placed into power-down (default), an external reference voltage can drive the REFIO pin. The voltage at the REFIO pin is buffered with three internal amplifiers, one for each ADC pair. The output of each buffer must be decoupled with a 10-μF capacitor between pin pairs 53 and 54, 55 and 56, and 57 and 58. The 10-μF capacitors are available as ceramic 0805-SMD components and in X5R quality. The internal reference buffers can be powered down to decrease the power dissipation of the device. In this case, external reference drivers can be connected to REFC_A, REFC_B, and REFC_C pins. With 10-μF decoupling capacitors, the minimum required bandwidth can be calculated using Equation 4. ln(2) f-3dB = 2p ´ tCONV (4) With the minimum tCONV of 1.26 μs, the external reference buffers require a minimum bandwidth of 88 kHz. Table 1. DAC Setting Examples (2.5-V Operation) VREF OUT (V) DECIMAL CODE BINARY CODE HEXADECIMAL CODE 0.5 204 00 1100 1100 CC 1.25 511 01 1111 1111 1FF 2.5 1023 11 1111 1111 3FF Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 23 ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com 7.3.2 Digital This section describes the digital control and the timing of the device in detail. 7.3.2.1 Device Configuration Depending on the desired mode of operation, the ADS8555 device can be configured using the external pins or the control register (see Table 5), as shown in Table 2. Table 2. ADS8555 Configuration Settings INTERFACE MODE HARDWARE MODE (HW/SW = 0) CONVERSION START CONTROLLED BY SEPARATE CONVST_x PINS SOFTWARE MODE (HW/SW = 1) CONVERSION START CONTROLLED BY CONVST_A PIN ONLY, EXCEPT IN SEQUENTIAL MODE Parallel (PAR/SER = 0) Configuration using pins, optionally, control bits C[22:18], C[15:13], and C[9:0] Configuration using control register bits C[31:0] only; status of pins 27 (only if used as RANGE input) and 63 is disregarded Serial (PAR/SER = 1) Configuration using pins, optionally, control bits C[22:18], C[15:13], and C[9:0]; bits C[31:24] are disregarded Configuration using control register bits C[31:0] only; status of pins 1, 27 (only if used as RANGE input), and 63 is disregarded; each access requires a control register update through SDI (see the Serial Interface section for details) 7.3.2.2 Parallel Interface To use the device with the parallel interface, hold the PAR/SER pin low. The maximum achievable data throughput rate using the internal clock is 630 kSPS in this case. Access to the ADS8555 device is controlled as illustrated in Figure 2 and Figure 3. The device can either operate with a 16-bit (WORD/BYTE pin set low) or an 8-bit (WORD/BYTE pin set high) parallel interface. If 8-bit operation is used, the HBEN pin selects if the low-byte (DB7 low) or the high-byte (DB7 high) is available on the data output DB[15:8] first. 7.3.2.3 Serial Interface The serial interface mode is selected by setting the PAR/SER pin high. In this case, each data transfer starts with the falling edge of the frame synchronization input (FS). The conversion results are presented on the serial data output pins SDO_A, SDO_B, and SDO_C depending on the selections made using the SEL_x pins. Starting with the most significant bit (MSB), the output data are changed at the rising edge of SCLK, so that the host processor can read it at the following falling edge. Serial data input SDI are latched at the falling edge of SCLK. The serial interface can be used with one, two, or three output ports. These ports are enabled with pins SEL_A, SEL_B, and SEL_C. If all three serial data output ports (SDO_A, SDO_B, and SDO_C) are selected, the data can be read with either two 16-bit data transfers or with one 32-bit data transfer. The data of channels CH_x0 are available first, followed by data from channels CH_x1. The maximum achievable data throughput rate is 450 kSPS in this case. If the application allows a data transfer using two ports only, SDO_A and SDO_B outputs are used. The device outputs data from channel CH_A0 followed by CH_A1 and CH_C0 on SDO_A, and data from channel CH_B0 followed by CH_B1 and CH_C1 occurs on SDO_B. In this case, a data transfer of three consecutive 16-bit words or one continuous 48-bit word is supported. The maximum achievable data throughput rate is 375 kSPS. The output SDO_A is selected if only one serial data port is used in the application. The data are available in the following order: CH_A0, CH_A1, CH_B0, CH_B1, CH_C0, and, finally CH_C1. Data can be read using six 16-bit transfers, three 32-bit transfers, or a single 96-bit transfer. The maximum achievable data throughput rate is 250 kSPS in this case. Figure 1 (the serial operation timing diagram) and Figure 31 illustrate all possible scenarios in more detail. 24 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 CONVST_A CONVST_B CONVST_C BUSY (C20 = C21 = 0) 48 SCLKs SEL_A = SEL_B = 1, SEL_C = 0 FS SDO_A CHA0 CHA1 CHC0 SDO_B CHB0 CHB1 CHC1 SEL_A = 1, SEL_B = SEL_C = 0 96 SCLKs FS SDO_A CHA0 CHA1 CHB0 CHB1 CHC0 CHC1 Figure 31. Serial Interface: Data Output With One or Two Active SDOs 7.3.2.4 Output Data Format The data output format of the ADS8555 is binary twos complement, as shown in Table 3. Table 3. Output Data Format DESCRIPTION INPUT VOLTAGE VALUE BINARY CODE (HEXADECIMAL CODE) 0111 1111 1111 1111 (7FFF) Positive full-scale 4 VREF or 2 VREF Midscale + 0.5 LSB VREF / (2 × resolution) 0000 0000 0000 0000 (0000) Midscale – 0.5 LSB –VREF / (2 × resolution) 1111 1111 1111 1111 (FFFF) Negative full-scale –4 VREF or –2 VREF 1000 0000 0000 0000 (8000) 7.4 Device Functional Modes 7.4.1 Hardware Mode With the HW/SW input (pin 62) set low, the device functions are controlled through the pins and, optionally, control register bits C[22:18], C[15:13], and C[9:0]. Generally, the device can be used in hardware mode and switched into software mode to initialize or adjust the control register settings (for example, the internal reference DAC) and then switched back to hardware mode thereafter. 7.4.2 Software Mode When the HW/SW input is set high, the device operates in software mode with functionality set only by the control register bits (corresponding pin settings are ignored). If parallel interface is used, an update of all control register settings is performed by issuing two 16-bit write accesses on pins DB[15:0] in word mode or four 8-bit accesses on pins DB[15:8] in byte mode (to avoid losing data, the entire sequence must be finished before starting a new conversion). Hold CS low during the two or four write accesses to completely update the configuration register. Updating only the upper eight bits (C[31:24]) is possible using a single write access and pins DB[15:8] in both word and byte modes. In word mode, the first write access updates only the upper eight bits and stores the lower eight bits (C[23:16]) for an update that takes place with the second write access along with C[15:0]. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 25 ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com Device Functional Modes (continued) If the serial interface is used, input data containing control register contents are required with each read access to the device in this mode (combined read/write access). For initialization purposes, all 32 bits of the register must be set (bit C16 must be set to 1 during that access to allow the update of the entire register content). To minimize switching noise on the interface, an update of the first eight bits (C[31:24]) with the remaining bits held low can be performed thereafter. Figure 35 illustrates the different control register update options. 7.4.3 Daisy-Chain Mode (In Serial Mode Only) The serial interface of the ADS8555 device supports a daisy-chain feature that allows cascading of multiple devices to minimize the board space requirements and simplify routing of the data and control lines. In this case, pins DB5/DCIN_A, DB4/DCIN_B, and DB3/DCIN_C are used as serial data inputs for channels A, B, and C, respectively. Figure 32 shows an example of a daisy-chain connection of three devices sharing a common CONVST line to allow simultaneous sampling of 18 analog channels along with the corresponding timing diagram. To activate the daisy-chain mode, the DCEN pin must be pulled high. As a result of the time specifications tS1, tH1, and tD3, the maximum SCLK frequency that may be used in daisy-chain mode is 27.78 MHz (assuming 50% duty cycle). CONVST FS SCLK ADS8555 #1 ADS8555 #2 ADS8555 #3 CONVST_A CONVST_A CONVST_A FS SCLK FS SCLK FS SCLK DCIN_A DCIN_B DCIN_C SDO_A SDO_B SDO_C DCEN = ‘0’ SDO_A SDO_B SDO_C DCIN_A DCIN_B DCIN_C DCEN = ‘1’ SDO_A SDO_B SDO_C To Processing Unit DCEN = ‘1’ CONVST BUSY (C20 = C21 = 0) FS SDO_x #3 Don’t Care 16-Bit Data CHx0 ADS8555 #3 16-Bit Data CHx1 ADS8555 #3 16-Bit Data CHx0 ADS8555 #2 16-Bit Data CHx1 ADS8555 #2 16-Bit Data CHx0 ADS8555 #1 16-Bit Data CHx1 ADS8555 #1 Figure 32. Example of Daisy-Chaining Three ADS8555 Devices 26 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 Device Functional Modes (continued) 7.4.4 Sequential Mode (In Software Mode With External Conversion Clock Only) The three channel pairs of the ADS8555 device can be run in sequential mode, with the corresponding CONVST_x signals interleaved, when an external clock is used. To activate the device in sequential mode, CR bits C11 (CLKSEL) and C23 (SEQ) must be asserted. In this case, the BUSY output indicates a finished conversion by going low (when C20 = 0) or high (when C20 = 1) for only a single conversion clock cycle in case of ongoing conversions of any other channel pairs. Figure 33 shows the behavior of the BUSY output in this mode. Initiate each conversion start during the high phase of the external clock, as shown in Figure 33. The minimum time required between two CONVST_x pulses is the time required to read the conversion result of a channel (pair). XCLK EOC CHBx (1) EOC CHAx (1) CONVST_A EOC CHCx (1) CONVST_B CONVST_C tCCLK BUSY (C20 = 0) CS RD CH A0 D[15:0] (1) CH A1 CH B0 CH B1 CH C0 CH C1 EOC = end of conversion (internal signal). Figure 33. Sequential Mode Timing 7.4.5 Reset and Power-Down Modes The device supports two reset mechanisms: a power-on reset (POR) and a pin-controlled reset (RESET) that can be issued using pin 28. Both the POR and RESET act as a master reset that causes any ongoing conversion to be interrupted, the control register content to be set to the default value, and all channels to be switched into sample mode. When the device is powered up, the POR sets the device in default mode when AVDD reaches 1.5 V. When the device is powered down, the POR circuit requires AVDD to remain below 125 mV at least 350 ms to ensure proper discharging of internal capacitors and to ensure correct behavior of the device when powered up again. If the AVDD drops below 400 mV but remains above 125 mV (see the undefined zone in Figure 34), the internal POR capacitor does not discharge fully and the device requires a pin-controlled reset to perform correctly after the recovery of AVDD. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 27 ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com Device Functional Modes (continued) AVDD (V) 5.500 Specified Supply Voltage Range 5.000 4.500 4.000 3.000 2.000 POR Trigger Level 1.500 1.000 0.400 0.125 Undefined Zone 0.350 0 t (s) Figure 34. POR: Relevant Voltage Levels The entire device, except the digital interface, can be powered down by pulling the STBY pin low (pin 24). Because the digital interface section remains active, data can be retrieved when in stand-by mode. To power the device on again, the STBY pin must be brought high. The device is ready to start a new conversion after the 10 ms required to activate and settle the internal circuitry. This user-controlled approach can be used in applications that require lower data throughput rates and lowest power dissipation. The content of CR is not changed during standby mode. A pin-controlled reset is not required after returning to normal operation. Although the standby mode affects the entire device, each device channel pair can also be individually switched off by setting control register bits C[15:13] (PD_x). When reactivated, the relevant channel pair requires 10 ms to fully settle before starting a new conversion. The internal reference remains active, except all channels are powered down at the same time. The auto-NAP power-down mode is enabled by asserting the A-NAP bit (C22) in the control register. If the autoNAP mode is enabled, the ADS8555 device automatically reduces the current requirement to 6 mA after finishing a conversion; thus, the end of conversion actually activates the power-down mode. Triggering a new conversion by applying a positive CONVST_x edge puts the device back into normal operation, starts the acquisition of the analog input, and automatically starts a new conversion six conversion clock cycles later. Therefore, a complete conversion cycle takes 24.5 conversion clock cycles; thus, the maximum throughput rate in auto-NAP powerdown mode is reduced to a maximum of 380 kSPS in serial mode, and 500 kSPS in parallel mode. The internal reference remains active during the auto-NAP mode. Table 4 compares the analog current requirements of the device in the different modes. Table 4. Maximum Analog Current (IAVDD) Demand of the ADS8555 OPERATIONAL MODE ANALOG CURRENT (IAVDD) ENABLED BY ACTIVATED BY NORMAL OPERATION TO POWERDOWN DELAY RESUMED BY POWER UP TO NORMAL OPERATION DELAY POWER UP TO NEXT CONVERSION START TIME DISABLED BY Normal operation 12mA/channel pair (maximum data rate) Power on CONVST_x — — — — Power off Auto-NAP 6mA A-NAP = 1 (CR bit) Each end of conversion At falling edge of BUSY CONVST_x Immediate 6 × tCCLK A-NAP = 0 (CR bit) Power down of channel pair x 16μA (channel pair x) HW/SW = 1 PD_x = 1 (CR bit) Immediate PD_x = 0 (CR bit) Immediate after completing register update 10ms HW/SW = 0 Stand-by 50μA Power on STBY = 0 Immediate STBY = 1 Immediate 10ms Power off 28 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 7.5 Register Maps 7.5.1 Control Register (CR); Default Value = 0x000003FF The control register settings can only be changed in software mode and are not affected when switching to hardware mode thereafter. The register values are independent from input pin settings. Changes are active with the rising edge of WR in parallel interface mode or with the 32nd falling SCLK edge of the access in which the register content has been updated in serial mode. Optionally, the register can also be partially updated by writing only the upper eight bits (C[31:24]). The CR content is defined in Table 5. RESET (or Power-Up) BUSY (C20 = C21 = 0) PAR/SER = 1 FS C[31:0] Initialization Data SDI Continuous Update Continuous Update C [31:24] C [31:24] PAR/SER = 0; WORD/BYTE = 0 CS WR Initialization Data DB[15:0] C [31:16] Update C [15:0] C [31:24] C [15:0] PAR/SER = 0; WORD/BYTE = 1 WR Initialization Data DB[15:8] C [31:24] C [23:16] C [15:8] Update C [31:24] C [7:0] C [23:16] Figure 35. Control Register Update Options Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 29 ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com Register Maps (continued) Table 5. Control Register (CR) Map 30 ACTIVE IN HARDWARE MODE BIT NAME DESCRIPTION C31 CH_C 0 = Channel pair C disabled for next conversion (default) 1 = Channel pair C enabled No C30 CH_B 0 = Channel pair B disabled for next conversion (default) 1 = Channel pair B enabled No C29 CH_A 0 = Channel pair A disabled for next conversion (default) 1 = Channel pair A enabled No C28 RANGE_C 0 = Input voltage range selection for channel pair C: 4 VREF (default) 1 = Input voltage range selection for channel pair C: 2 VREF No C27 RANGE_B 0 = Input voltage range selection for channel pair B: 4 VREF (default) 1 = Input voltage range selection for channel pair B: 2 VREF No C26 RANGE_A 0 = Input voltage range selection for channel pair A: 4 VREF (default) 1 = Input voltage range selection for channel pair A: 2 VREF No C25 REFEN 0 = Internal reference source disabled (default) 1 = Internal reference source enabled No C24 REFBUF 0 = Internal reference buffers enabled (default) 1 = Internal reference buffers disabled No C23 SEQ 0 = Sequential convert start mode disabled (default) 1 = Sequential convert start mode enabled (bit 11 must be 1 in this case) No C22 A-NAP 0 = Normal operation (default) 1 = Auto-NAP feature enabled Yes C21 BUSY/INT 0 = BUSY/INT pin in normal mode (BUSY) (default) 1 = BUSY/INT pin in interrupt mode (INT) Yes C20 BUSY L/H 0 = BUSY/INT active high (default) 1 = BUSY/INT active low Yes C19 Don’t use This bit is always set to 0 — 0 = Internal reference voltage: 2.5 V (default) 1 = Internal reference voltage: 3 V Yes C18 VREF C17 READ_EN 0 = Normal operation (conversion results available on SDO_x) (default) 1 = Control register contents output on SDO_x with next access Yes C16 C23:0_EN 0 = Control register bits C[31:24] update only (serial mode only) (default) 1 = Entire control register update enabled (serial mode only) Yes C15 PD_C 0 = Normal operation (default) 1 = Power down for channel pair C enabled (bit 31 must be 0 in this case) Yes C14 PD_B 0 = Normal operation (default) 1 = Power down for channel pair B enabled (bit 30 must be 0 in this case) Yes C13 PD_A 0 = Normal operation (default) 1 = Power down for channel pair A enabled (bit 29 must be 0 in this case) Yes C12 Don't use This bit is always 0 — C11 CLKSEL 0 = Normal operation with internal conversion clock (mandatory in hardware mode) (default) 1 = External conversion clock (applied through pin 27) used No C10 CLKOUT_EN 0 = Normal operation (default) 1 = Internal conversion clock available at pin 27 No C9 REFDAC[9] Bit 9 (MSB) of reference DAC value; default = 1 Yes C8 REFDAC[8] Bit 8 of reference DAC value; default = 1 Yes C7 REFDAC[7] Bit 7 of reference DAC value; default = 1 Yes C6 REFDAC[6] Bit 6 of reference DAC value; default = 1 Yes C5 REFDAC[5] Bit 5 of reference DAC value; default = 1 Yes C4 REFDAC[4] Bit 4 of reference DAC value; default = 1 Yes C3 REFDAC[3] Bit 3 of reference DAC value; default = 1 Yes C2 REFDAC[2] Bit 2 of reference DAC value; default = 1 Yes C1 REFDAC[1] Bit 1 of reference DAC value; default = 1 Yes C0 REFDAC[0] Bit 0 (LSB) of reference DAC value; default = 1 Yes Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 8 Applications and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The ADS8555 device enables high-precision measurement of up to six analog signals simultaneously. The following sections summarize some of the typical use cases for the ADS8555 device and the main steps and components used around the analog-to-digital converter. 8.2 Typical Application 8.2.1 Measurement of Electrical Variables in a 3-Phase Power System The accurate measurement of electrical variables in a power grid is extremely critical because it helps determine the operating status and running quality of the grid. Such accurate measurements also help diagnose problems with the power network thereby enabling prompt solutions and minimizing down time. The key electrical variables measured in 3-phase power systems are the three line voltages and the three line currents; see Figure 36. These variables enable metrology and power automation systems to determine the amplitude, frequency and phase information to perform harmonic analysis, power factor calculation and power quality assessment among others. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 31 ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com Typical Application (continued) 0.1 F HVDD OPA2277 50 k ADS8555 From reference block REFIO 49.9 0.47 F BVDD CH_A1 HVSS 100 k From analog front ends of CH_B1 and CH_C1 370 pF 0.1 F 100 k 820 pF To analog front ends of CH_B1 and CH_C1 REFEN/WR HW/SW HVSS PT3 370 pF PAR/SER +15 V WORD/BYTE HVDD 100 k 820 pF 10 F 0.1 F 10 F 0.1 F -15 V AGND HVSS +5 V AVDD CT1 40 F Phase A AGND +3.3 V Phase B CT2 BVDD 1 F Neutral BGND REFCP Load Three Phase Power System CH_C1 CH_A0 100 k PT2 STBY RANGE HVDD OPA2277 49.9 50 k PT1 CH_B1 Phase C CT3 10 F From analog front end of CH_C0 CH_C0 REFBP 10 F To analog front ends of CH_B0 and CH_C0 From analog front end of CH_B0 REFBN CH_B0 REFAP 10 F Host controller REFCN REFAN CONVST_A CONVST_B CONVST_C RESET CS RD DB[15:0] Figure 36. Simultaneous Acquisition of Voltage and Current in a 3-Phase Power System 32 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 Typical Application (continued) 8.2.1.1 Design Requirements To • • • • • • begin the design process, a few parameters must be decided upon. The designer must know the following: Output range of the potential transformers (elements labeled PT1, PT2, and PT3 in Figure 36) Output range of the current transformers (elements labeled CT1, CT2, and CT3 in Figure 36) Input impedance required from the analog front end for each channel Fundamental frequency of the power system Number of harmonics that must be acquired Type of signal conditioning required from the analog front end for each channel 8.2.1.2 Detailed Design Procedure Figure 37 shows the topology chosen to meet the design requirements. A feedback capacitor CF is included to provide a low-pass filter characteristic and attenuate signals outside the band of interest. C1 R1 HVDD R2 Vout RIN To ADS8555 input C2 HVSS RF Vin From PT or CT CF Figure 37. Op Amp in an Inverting Configuration The potential transformers (PTs) and current transformers (CTs) used in the system depicted in Figure 36 provide the six input variables required. These transformers have a ±10-V output range. Although the PTs and CTs provide isolation from the power system, the value of RIN is selected as 100 kΩ to provide an additional, high-impedance safety element to the input of the ADC. Moreover, selecting a low-frequency gain of –1 V/V (as shown in Equation 5) provides a ±10-V output that can be fed into the ADS8555 device; therefore, the value of RF is selected as 100 kΩ. V out Low f RF V in R IN 100 k : Vin 100 k : V in (5) The primary goal of the acquisition system depicted in Figure 36 is to measure up to 20 harmonics in a 60-Hz power network. Thus, the analog front-end must have sufficient bandwidth to detect signals up to 1260 Hz, as shown in Equation 6. f MAX ( 20 1) 60 Hz 1260 Hz (6) Based on the bandwidth found in Equation 6 the ADS8555 device is set to simultaneously sample all six channels at 15.36 kSPS, which provides enough samples to clearly resolve even the highest harmonic required. The passband of the configuration shown in Figure 37 is determined by the –3-dB frequency according to Equation 7. The value of CF is selected as 820 pF, which is a standard capacitance value available in 0603 size (surface-mount component) and such values, combined with that of RF, result in sufficient bandwidth to accommodate the required 20 harmonics (at 60 Hz). f 3 dB 1 2S R F C F 1 2S (100 k : )( 820 pF ) 1940 Hz (7) The value of R1 is selected as the parallel combination of RIN and RF to prevent the input bias current of the operational amplifier from generating an offset error. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 33 ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com Typical Application (continued) The value of component C1 is chosen as 0.1 µF to provide a low-impedance path for noise signals that can be picked up by R1; the 0.1-µF capacitance value improves the EMI robustness and noise performance of the system. The OPA2277 device is chosen for its low input offset voltage, low drift, bipolar swing, sufficient gain-bandwidth product and low quiescent current. For additional information on the procedure to select SAR ADC input drivers, see reference guide TIDU181. The charge injection damping circuit is composed of R2 (49.9 Ω) and C2 (370 pF); these components reject highfrequency noise and meet the settling requirements of the ADS8555 device input. Figure 38 shows the reference block used in this design. REF5025 AVDD 10 VIN 10 F 0.1 F OPA211 OUT 100 To REFIO 1 GND TRIM 47 F AGND 47 F 10 nF AVDD 47 F 1 F 10 nF 22 F 49.9 Figure 38. Op Amp in an Inverting Configuration For more information on the design of charge injection damping circuits and reference driving circuits for SAR ADCs, consult reference guide TIDU014. 8.2.1.3 Application Curve Figure 39 shows the frequency spectrum of the data acquired by the ADS8555 device for a sinusoidal, 20-VPP input at 60 Hz. Figure 39. Frequency Spectrum for a Sinusoidal 20-VPP Signal at 60 Hz The ac performance parameters are: 34 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 Typical Application (continued) • • • • SNR: 91.9 dB THD: –99.68 dB SNDR: 91.23 dB SFDR: 103.65 dB 9 Power Supply Recommendations The ADS8555 device requires four separate supplies: the analog supply for the ADC (AVDD), the buffer I/O supply for the digital interface (BVDD), and the two high-voltage supplies driving the analog input circuitry (HVDD and HVSS). Generally, there are no specific requirements with regard to the power sequencing of the device. However, when HVDD is supplied before AVDD, the internal ESD structure conducts, increasing IHVDD beyond the specified value. The AVDD supply provides power to the internal circuitry of the ADC. AVDD can be set in the range of 4.5 V to 5.5 V. Because the supply current of the device is typically 30 mA, a passive filter cannot be used between the digital board supply of the application and the AVDD pin. TI recommends a linear regulator to generate the analog supply voltage. Decouple each AVDD pin to AGND with a 100-nF capacitor. In addition, place a single 10-μF capacitor close to the device but without compromising the placement of the smaller capacitor. Optionally, each supply pin can be decoupled using a 1-μF ceramic capacitor without the requirement for a 10-μF capacitor. The BVDD supply is only used to drive the digital I/O buffers and can be set in the range of 2.7 V to 5.5 V. This range allows the device to interface with most state-of-the-art processors and controllers. To limit the noise energy from the external digital circuitry to the device, filter BVDD. A 10-Ω resistor can be placed between the external digital circuitry and the device because the current drawn is typically below 2 mA (depending on the external loads). Place a bypass ceramic capacitor of 1 μF (or alternatively, a pair of 100-nF and 10-μF capacitors) between the BVDD pin and pin 8. The high-voltage supplies (HVSS and HVDD) are connected to the analog inputs. Noise and glitches on these supplies directly couple into the input signals. Place a 100-nF ceramic decoupling capacitor, located as close to the device as possible, between each of pins 30, 31, and AGND. An additional 10-μF capacitor is used that must be placed close to the device but without compromising the placement of the smaller capacitor. 10 Layout 10.1 Layout Guidelines All GND pins must be connected to a clean ground reference. This connection must be kept as short as possible to minimize the inductance of this path. TI recommends using vias connecting the pads directly to the ground plane. In designs without ground planes, keep the ground trace as wide as possible. Avoid connections that are too close to the grounding point of a microcontroller or digital signal processor. Depending on the circuit density on the board, placement of the analog and digital components, and the related current loops, a single solid ground plane for the entire printed-circuit-board (PCB) or a dedicated analog ground area can be used. In case of a separated analog ground area, ensure a low-impedance connection between the analog and digital ground of the ADC by placing a bridge underneath (or next) to the ADC. Otherwise, even short undershoots on the digital interface lower than –300 mV lead to the conduction of ESD diodes causing current flow through the substrate and degrading the analog performance. During PCB layout, take care to avoid any return currents crossing sensitive analog areas or signals. Figure 40 illustrates a layout recommendation for the ADS8555 device along with the proper decoupling and reference capacitor placement and connections. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 35 ADS8555 SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 www.ti.com 10.2 Layout Example ADS8555 Top View To AVDD To AVDD AVDD Source To DUT 10 mF AVDD 51 0.1mF AGND 54 0.47mF AGND 56 10mF AGND 58 10mF AGND 61 AGND 62 10mF 1 48 2 AVDD 3 AVDD 4 45 5 AGND 6 AGND 7 42 BGND AVDD BVDD AVDD AGND 13 36 14 AVDD 15 AVDD 16 33 17 18 19 20 21 22 23 24 0.1mF LEGEND To AVDD 27 28 29 0.1 mF To AVDD 0.1 mF 0.1 mF To AVDD 0.1 mF 0.1 mF To AVDD 0.1 mF AGND 12 HVDD AGND HVSS 39 11 AVDD 10 AGND 1 mF To BVDD 63 AVDD 64 AGND 0.1mF 0.1mF 0.1mF 10mF 10mF To HVSS/HVDD TOP layer; copper pour and traces Lower layer; AGND area Lower layer; BGND area Via (1) All 0.1-μF, 0.47-μF, and 1-μF capacitors must be placed as close to the ADS8555 device as possible. (2) All 10-μF capacitors must be close to the device but without compromising the placement of the smaller capacitors. Figure 40. Layout Recommendation 36 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 ADS8555 www.ti.com SBAS531D – DECEMBER 2010 – REVISED FEBRUARY 2016 11 Device and Documentation Support 11.1 Documentation Support 11.1.1 Related Documentation For related documentation see the following: • OPA2277 Data Sheet, SBOS079 • REF5025 Data Sheet, SBOS410 • Power-Optimized 16-Bit 1-MSPS Data Acquisition Block Design Guide, TIDU014 • 16-Bit 400-KSPS 4-Channel Multiplexed Data Acquisition System Design Guide, TIDU181 11.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.3 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 11.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: ADS8555 37 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) ADS8555SPM ACTIVE LQFP PM 64 160 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 ADS 8555 ADS8555SPMR ACTIVE LQFP PM 64 1000 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 ADS 8555 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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