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AMC1200, AMC1200B
SBAS542D – APRIL 2011 – REVISED JULY 2015
AMC1200/B Fully-Differential Isolation Amplifier
1 Features
3 Description
•
The AMC1200 and AMC1200B are precision isolation
amplifiers with an output separated from the input
circuitry by a silicon dioxide (SiO2) barrier that is
highly resistant to magnetic interference. This barrier
has been certified to provide galvanic isolation of up
to 4250 VPEAK (AMC1200B) or 4000 VPEAK
(AMC1200) according to UL1577 and VDE V 088410. Used in conjunction with isolated power supplies,
these devices prevent noise currents on a high
common mode voltage line from entering the local
ground and interfering with or damaging sensitive
circuitry.
1
•
•
•
•
•
•
•
•
•
•
•
±250-mV Input Voltage Range Optimized for
Shunt Resistors
Very Low Nonlinearity: 0.075% Maximum at 5 V
Low Offset Error: 1.5 mV Maximum
Low Noise: 3.1 mVRMS Typical
Low High-Side Supply Current:
8 mA Maximum at 5 V
Input Bandwidth: 60 kHz Minimum
Fixed Gain: 8 (0.5% accuracy)
High Common Mode Rejection Ratio: 108 dB
3.3-V Operation on Low-Side
Certified Galvanic Isolation:
– UL1577 and VDE V 0884-10 Approved
– Isolation Voltage: 4250 VPEAK (AMC1200B)
– Working Voltage: 1200 VPEAK
– Transient Immunity: 10 kV/µs Minimum
Typical 10-Year Lifespan at Rated Working
Voltage (see Application Report SLLA197)
Fully Specified Over the Extended Industrial
Temperature Range
2 Applications
•
Shunt Resistor Based Current Sensing in:
– Motor Control
– Green Energy
– Frequency Inverters
– Uninterruptible Power Supplies
The input of the AMC1200 or AMC1200B is optimized
for direct connection to shunt resistors or other low
voltage level signal sources. The excellent
performance of the device supports accurate current
control resulting in system-level power saving and,
especially in motor-control applications, lower torque
ripple. The common mode voltage of the output
signal is automatically adjusted to either the 3-V or
5-V low-side supply.
The AMC1200 and AMC1200B are fully specified
over the extended industrial temperature range of
–40°C to 105°C and are available in a wide-body
SOIC-8 package (DWV) and a gullwing-8 package
(DUB).
Device Information(1)
PART NUMBER
AMC1200,
AMC1200B
PACKAGE
BODY SIZE (NOM)
SOP (8)
9.50 mm × 6.57 mm
SOIC (8)
5.85 mm × 7.50 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
VDD1
VDD2
5V
2.55 V
0V
VINP
VOUTP
VINN
VOUTN
2V
250 mV
3.3 V
1.29 V
GND1
2V
GND2
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
AMC1200, AMC1200B
SBAS542D – APRIL 2011 – REVISED JULY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
6
Absolute Maximum Ratings .....................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 11
7.1 Overview ................................................................. 11
7.2 Functional Block Diagram ....................................... 11
7.3 Feature Description................................................. 11
7.4 Device Functional Modes........................................ 13
8
Application and Implementation ........................ 15
8.1 Application Information............................................ 15
8.2 Typical Applications ................................................ 15
9 Power Supply Recommendations...................... 18
10 Layout................................................................... 18
10.1 Layout Guidelines ................................................. 18
10.2 Layout Example .................................................... 19
11 Device and Documentation Support ................. 20
11.1
11.2
11.3
11.4
11.5
11.6
Documentation Support ........................................
Related Links ........................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
20
20
20
20
20
20
12 Mechanical, Packaging, and Orderable
Information ........................................................... 21
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (September 2013) to Revision D
•
Page
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
Changes from Revision B (August 2012) to Revision C
Page
•
Deleted device graphic ........................................................................................................................................................... 1
•
Added DWV (SOIC-9) package to document......................................................................................................................... 1
•
Changed last paragraph of Description section ..................................................................................................................... 1
•
Added DWV pin out drawing .................................................................................................................................................. 3
•
Added DWV column to Thermal Information table ................................................................................................................. 4
•
Added row for DWV package to L(I01) and L(I02) parameters in Package Characteristics table ....................................... 12
Changes from Revision A (August 2011) to Revision B
Page
•
Changed Isolation Voltage feature bullet................................................................................................................................ 1
•
Added AMC1200B device to data sheet ................................................................................................................................ 1
•
Changed title for Figure 25 ................................................................................................................................................... 10
•
Changed CTI parameter minimum value in Electrical Characteristics from ≥ 175 to ≥ 400................................................. 12
Changes from Original (April 2011) to Revision A
Page
•
Changed sign for maximum junction temperature from minus to plus (typo)......................................................................... 4
•
Added "0.5-V step" to test condition for Rise/fall time parameter .......................................................................................... 5
•
Changed Figure 12................................................................................................................................................................. 6
•
Changed Figure 13................................................................................................................................................................. 7
•
Changed surge immunity parameter from ±4000 to ±6000.................................................................................................. 12
2
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SBAS542D – APRIL 2011 – REVISED JULY 2015
5 Pin Configuration and Functions
DUB Package
8-Pin SOP
Top View
DWV Package
8-Pin SOIC
Top View
VDD1
1
8
VDD2
VINP
2
7
VINN
3
GND1
4
VDD1
1
8
VDD2
VOUTP
VINP
2
7
VOUTP
6
VOUTN
VINN
3
6
VOUTN
5
GND2
GND1
4
5
GND2
Pin Functions
PIN
I/O
DESCRIPTION
NO.
NAME
1
VDD1
Power
2
VINP
Analog input
Noninverting analog input
3
VINN
Analog input
Inverting analog input
4
GND1
Power
High-side analog ground
5
GND2
Power
Low-side analog ground
6
VOUTN
Analog output
Inverting analog output
7
VOUTP
Analog output
Noninverting analog output
8
VDD2
Power
High-side power supply
Low-side power supply
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SBAS542D – APRIL 2011 – REVISED JULY 2015
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6 Specifications
6.1 Absolute Maximum Ratings
Over the operating ambient temperature range, unless otherwise noted. (1)
Supply voltage, VDD1 to GND1 or VDD2 to GND2
Analog input voltage at VINP, VINN
Input current to any pin except supply pins
MIN
MAX
UNIT
–0.5
6
V
GND1 – 0.5
VDD1 + 0.5
V
–10
10
mA
150
°C
150
°C
Maximum junction temperature, TJ Max
Storage Temperature, Tstg
(1)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute
maximum rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM) JEDEC standard 22, test method A114C.01 (1)
±2500
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
TA
Operating ambient temperature range
–40
VDD1
High-side power supply
4.5
VDD2
Low-side power supply
2.7
NOM
MAX
UNIT
105
°C
5
5.5
V
5
5.5
V
6.4 Thermal Information
AMC1200, AMC1200B
THERMAL METRIC
(1)
DUB (SOP)
DWV (SOIC)
8 PINS
8 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
75.1
102.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
61.6
49.8
°C/W
RθJB
Junction-to-board thermal resistance
39.8
56.6
°C/W
ψJT
Junction-to-top characterization parameter
27.2
16
°C/W
ψJB
Junction-to-board characterization parameter
39.4
55.2
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics
All minimum/maximum specifications at TA = –40°C to 105°C and within the specified voltage range, unless otherwise noted.
Typical values are at TA = 25°C, VDD1 = 5 V, and VDD2 = 3.3 V.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT
Maximum input voltage before
clipping
VINP – VINN
Differential input voltage
VINP – VINN
±320
mV
–250
250
–0.16
VDD1
mV
VCM
Common mode operating range
VOS
Input offset voltage
–1.5
±0.2
1.5
mV
TCVOS
Input offset thermal drift
–10
±1.5
10
µV/K
CMRR
Common mode rejection ratio
CIN
Input capacitance to GND1
CIND
Differential input capacitance
RIN
Differential input resistance
VIN from 0 V to 5 V at 0 Hz
VIN from 0 V to 5 V at 50 kHz
VINP or VINN
Small-signal bandwidth
60
V
108
dB
95
dB
3
pF
3.6
pF
28
kΩ
100
kHz
OUTPUT
Nominal gain
GERR
Gain error
TCGERR
Gain error thermal drift
Nonlinearity
8
Initial, at TA = 25°C
–0.5%
±0.05%
0.5%
–1%
±0.05%
1%
±56
4.5 V ≤ VDD2 ≤ 5.5 V
–0.075%
±0.015%
0.075%
2.7 V ≤ VDD2 ≤ 3.6 V
–0.1%
±0.023%
0.1%
Nonlinearity thermal drift
Output noise
PSRR
Power-supply rejection ratio
Rise/fall time
VIN to VOUT signal delay
CMTI
ROUT
2.4
ppm/K
VINP = VINN = 0 V
3.1
mVRMS
vs VDD1, 10-kHz ripple
80
dB
vs VDD2, 10-kHz ripple
61
0.5-V step, 10% to 90%
3.66
6.6
µs
0.5-V step, 50% to 10%, unfiltered output
1.6
3.3
µs
0.5-V step, 50% to 50%, unfiltered output
3.15
5.6
µs
0.5-V step, 50% to 90%, unfiltered output
5.26
9.9
µs
Common mode transient immunity VCM = 1 kV
Output common mode voltage
ppm/K
dB
10
15
2.7 V ≤ VDD2 ≤ 3.6 V
1.15
1.29
1.45
kV/µs
V
4.5 V ≤ VDD2 ≤ 5.5 V
2.4
2.55
2.7
V
Short circuit current
20
mA
Output resistance
2.5
Ω
POWER SUPPLY
VDD1
High-side supply voltage
4.5
VDD2
Low-side supply voltage
2.7
IDD1
High-side supply current
IDD2
Low-side supply current
PDD1
High-side power dissipation
PDD2
Low-side power dissipation
5
5.5
V
5
5.5
5.4
8
mA
2.7 V < VDD2 < 3.6 V
3.8
6
mA
4.5 V < VDD2 < 5.5 V
4.4
7
mA
27
44
mW
2.7 V < VDD2 < 3.6 V
11.4
21.6
mW
4.5 V < VDD2 < 5.5 V
22
38.5
mW
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6.6 Typical Characteristics
At VDD1 = VDD2 = 5 V, VINP = –250 mV to 250 mV, and VINN = 0 V, unless otherwise noted.
2
2
1.5
1.5
1
1
Input Offset (mV)
Input Offset (mV)
VDD2 = 2.7 V to 3.6 V
0.5
0
−0.5
0.5
0
−0.5
−1
−1
−1.5
−1.5
−2
4.5
4.75
5
VDD1 (V)
5.25
−2
2.7
5.5
3
3.3
3.6
VDD2 (V)
Figure 1. Input Offset vs High-Side Supply Voltage
Figure 2. Input Offset vs Low-Side Supply Voltage
2
2
1.5
1
1
Input Offset (mV)
Input Offset (mV)
VDD2 = 4.5 V to 5.5 V
1.5
0.5
0
−0.5
0.5
0
−0.5
−1
−1
−1.5
−1.5
−2
4.5
4.75
5
VDD2 (V)
5.25
−2
−40 −25 −10
5.5
130
40
120
30
110
20
100
90
80
−30
Figure 5. Common Mode Rejection Ratio vs Input Frequency
6
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110 125
−10
60
100
95
0
−20
1
10
Input Frequency (kHz)
80
10
70
50
0.1
20 35 50 65
Temperature (°C)
Figure 4. Input Offset vs Temperature
Input Current (µA)
CMRR (dB)
Figure 3. Input Offset vs Low-Side Supply Voltage
5
−40
−400
−300
−200
−100
0
100
Input Voltage (mV)
200
300
400
Figure 6. Input Current vs Input Voltage
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Typical Characteristics (continued)
At VDD1 = VDD2 = 5 V, VINP = –250 mV to 250 mV, and VINN = 0 V, unless otherwise noted.
120
1
0.8
0.6
0.4
100
Gain Error (%)
Input Bandwidth (kHz)
110
90
80
0.2
0
−0.2
−0.4
−0.6
70
−0.8
60
−40 −25 −10
5
20 35 50 65
Temperature (°C)
80
95
−1
4.5
110 125
Figure 7. Input Bandwidth vs Temperature
5.25
5.5
1
VDD2 = 2.7 V to 3.6 V
0.6
0.6
0.4
0.4
0.2
0
−0.2
0.2
0
−0.2
−0.4
−0.4
−0.6
−0.6
−0.8
−0.8
−1
2.7
3
3.3
VDD2 = 4.5 V to 5.5 V
0.8
Gain Error (%)
Gain Error (%)
5
VDD1 (V)
Figure 8. Gain Error vs High-Side Supply Voltage
1
0.8
−1
4.5
3.6
VDD2 (V)
Figure 9. Gain Error vs Low-Side Supply Voltage
0.8
0
0.6
−10
Normalized Gain (dB)
10
0.2
0
−0.2
−0.4
−50
−70
80
95
Figure 11. Gain Error vs Temperature
110 125
5.5
−40
−0.8
20 35 50 65
Temperature (°C)
5.25
−30
−60
5
5
VDD2 (V)
−20
−0.6
−1
−40 −25 −10
4.75
Figure 10. Gain Error vs Low-Side Supply Voltage
1
0.4
Gain Error (%)
4.75
−80
1
10
100
Input Frequency (kHz)
500
Figure 12. Normalized Gain vs Input Frequency
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Typical Characteristics (continued)
At VDD1 = VDD2 = 5 V, VINP = –250 mV to 250 mV, and VINN = 0 V, unless otherwise noted.
0
5
−30
4.5
−60
VOUTP
VOUTN
4
Output Voltage (V)
Output Phase (°)
−90
−120
−150
−180
−210
−240
3.5
3
2.5
2
1.5
−270
1
−300
0.5
−330
−360
1
10
100
Input Frequency (kHz)
0
−400
1000
Figure 13. Output Phase vs Input Frequency
−200
−100
0
100
Input Voltage (mV)
200
300
400
Figure 14. Output Voltage vs Input Voltage
3.6
3.3
−300
0.1
VDD2 = 2.7 V to 3.6 V
VOUTP
VOUTN
3
0.08
0.06
2.4
Nonlinearity (%)
Output Voltage (V)
2.7
2.1
1.8
1.5
1.2
0.04
0.02
0
−0.02
−0.04
0.9
−0.06
0.6
−0.08
0.3
0
−400
−300
−200
−100
0
100
Input Voltage (mV)
200
300
−0.1
4.5
400
Figure 15. Output Voltage vs Input Voltage
VDD2 = 2.7 V to 3.6 V
5.5
0.06
0.06
0.04
0.04
0.02
0
−0.02
−0.04
0.02
0
−0.02
−0.04
−0.06
−0.06
−0.08
−0.08
3
3.3
3.6
VDD2 = 4.5 V to 5.5 V
0.08
Nonlinearity (%)
Nonlinearity (%)
5.25
0.1
0.08
−0.1
4.5
4.75
VDD2 (V)
Figure 17. Nonlinearity vs Low-Side Supply Voltage
8
5
VDD1 (V)
Figure 16. Nonlinearity vs High-Side Supply Voltage
0.1
−0.1
2.7
4.75
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VDD2 (V)
5.25
5.5
Figure 18. Nonlinearity vs Low-Side Supply Voltage
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Typical Characteristics (continued)
At VDD1 = VDD2 = 5 V, VINP = –250 mV to 250 mV, and VINN = 0 V, unless otherwise noted.
0.1
0.1
VDD2 = 3 V
VDD2 = 5 V
0.08
0.06
0.06
0.04
0.04
Nonlinearity (%)
Nonlinearity (%)
0.08
0.02
0
−0.02
−0.04
0.02
0
−0.02
−0.04
−0.06
−0.06
−0.08
−0.08
−0.1
−250 −200 −150 −100 −50
0
50 100
Input Voltage (mV)
150
200
−0.1
−40 −25 −10
250
2600
100
2400
90
2200
80
2000
70
1800
1600
1400
110 125
20
800
10
100
VDD1
VDD2
40
30
10
95
50
1000
1
80
60
1200
600
0.1
20 35 50 65
Temperature (°C)
Figure 20. Nonlinearity vs Temperature
PSRR (dB)
Noise (nV/sqrt(Hz))
Figure 19. Nonlinearity vs Input Voltage
5
0
1
10
Ripple Frequency (kHz)
Frequency (kHz)
Figure 21. Output Noise Density vs Frequency
100
Figure 22. Power-Supply Rejection Ratio vs Ripple
Frequency
10
Output Rise/Fall Time (µs)
9
8
500 mV/div
7
6
5
4
200 mV/div
3
2
500 mV/div
1
0
−40 −25 −10
5
20 35 50 65
Temperature (°C)
80
95
Time (2 ms/div)
110 125
Figure 23. Output Rise and Fall Time vs Temperature
Figure 24. Full-Scale Step Response
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Typical Characteristics (continued)
At VDD1 = VDD2 = 5 V, VINP = –250 mV to 250 mV, and VINN = 0 V, unless otherwise noted.
10
5
8
Signal Delay (µs)
7
6
5
4
3
2
1
0
−40 −25 −10
5
20 35 50 65
Temperature (°C)
80
95
VDD2 rising
VDD2 falling
Output Common−Mode Voltage (V)
50% to 10%
50% to 50%
50% to 90%
9
4
3
2
1
0
3.5
110 125
Figure 25. Output Signal Delay Time vs Temperature
3.7
3.8
3.9
4
4.1
VDD2 (V)
4.2
4.3
4.4
4.5
Figure 26. Output Common Mode Voltage vs Low-Side
Supply Voltage
5
8
VDD2 = 2.7 V to 3.6 V
VDD2 = 4.5 V to 5.5 V
Output Common−Mode Voltage (V)
3.6
IDD1
IDD2
7
Supply Current (mA)
4
3
2
6
5
4
3
2
1
1
0
−40 −25 −10
5
20 35 50 65
Temperature (°C)
80
95
0
4.5
110 125
Figure 27. Output Common Mode Voltage vs Temperature
4.75
5
Supply Voltage (V)
5.25
5.5
Figure 28. Supply Current vs Supply Voltage
8
8
7
6
6
Supply Current (mA)
IDD2 (mA)
VDD2 = 2.7 V to 3.6 V
7
5
4
3
2
1
0
2.7
5
4
3
2
1
3
3.3
3.6
IDD1
IDD2
0
−40 −25 −10
VDD2 (V)
Figure 29. Low-Side Supply Current vs Low-Side Supply
Voltage
10
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20 35 50 65
Temperature (°C)
80
95
110 125
Figure 30. Supply Current vs Temperature
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7 Detailed Description
7.1 Overview
The AMC1200 is a fully-differential precision isolation amplifier. The analog input signal is converted to a digital
signal and then transferred across a capacitive isolation barrier. The digital modulation used in the AMC1200
together with the isolation barrier characteristics result in excellent reliability and transient immunity.
After processing the digital signal with a low-pass filter, an analog signal is provided at the outputs. The main
building blocks are shown in the Functional Block Diagram section.
The SiO2-based capacitive isolation barrier supports a high level of magnetic field immunity, as described in
application report, ISO72x Digital Isolator Magnetic-Field Immunity (SLLA181), available for download at
www.ti.com.
7.2 Functional Block Diagram
VDD1
VDD2
Isolation
Barrier
2.5-V
Reference
2.56-V
Reference
DATA
TX
RX
VINP
VOUTP
Retiming and
3rd order
active
low-pass filter
û-Modulator
VINN
TX
VOUTN
RX
CLK
RC oscillator
GND1
GND2
7.3 Feature Description
7.3.1 Insulation Characteristics
PARAMETER
VIORM
VPR
VIOTM
VISO
RS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
1200
VPEAK
Qualification test: after Input/Output Safety Test
Subgroup 2/3 VPR = VIORM × 1.2, t = 10 s, partial
discharge < 5 pC
1140
VPEAK
Qualification test: method a, after environmental tests
subgroup 1, VPR = VIORM × 1.6, t = 10 s, partial
discharge < 5 pC
1920
VPEAK
100% production test: method b1, VPR = VIORM x 1.875,
t = 1 s, partial discharge < 5 pC
2250
VPEAK
AMC1200
4000
VPEAK
AMC1200B
4250
VPEAK
Qualification test: VTEST = VISO,
t = 60 s
AMC1200
4000
VPEAK
AMC1200B
4250
VPEAK
100% production test: VTEST =
1.2 x VISO, t = 1 s
AMC1200
4800
VPEAK
5100
VPEAK
Maximum working
insulation voltage
Input to output test voltage
Transient overvoltage
Qualification test: t = 60 s
Insulation voltage per UL
Insulation resistance
AMC1200B
VIO = 500 V at TS
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Feature Description (continued)
PARAMETER
PD
TEST CONDITIONS
MIN
TYP
Pollution degree
MAX
UNIT
2
°
7.3.2 IEC 61000-4-5 Ratings
PARAMETER
VIOSM
TEST CONDITIONS
Surge immunity
1.2-μs/50-μs voltage surge and 8-μs/20-μs current surge
VALUE
UNIT
±6000
V
7.3.3 IEC 60664-1 Ratings (1)
PARAMETER
TEST CONDITIONS
Basic isolation group
Installation classification
(1)
SPECIFICATION
Material group
II
Rated mains voltage ≤ 150 VRMS
I-IV
Rated mains voltage ≤ 300 VRMS
I-IV
Rated mains voltage ≤ 400 VRMS
I-III
Rated mains voltage < 600 VRMS
I-III
Over operating free-air temperature range (unless otherwise noted).
7.3.4 Package Characteristics (1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
L(I01)
Minimum air gap (clearance)
Shortest terminal to terminal
distance through air
DWV package
DUB package
7
mm
Minimum external tracking
(creepage)
Shortest terminal to terminal
distance across the package
surface
DWV package
8
mm
L(I02)
DUB package
7
mm
CTI
Tracking resistance
(comparative tracking index)
DIN IEC 60112/VDE 0303 part 1
≥ 400
V
Minimum internal gap
(internal clearance)
Distance through the insulation
0.014
mm
RIO
Isolation resistance
8
mm
Input to output, VIO = 500 V, all pins on each side of
the barrier tied together to create a two-terminal
device, TA < 85°C
> 1012
Ω
Input to output, VIO = 500 V,
85°C ≤ TA < TA max
> 1011
Ω
CIO
Barrier capacitance input to
output
VI = 0.5 VPP at 1 MHz
1.2
pF
CI
Input capacitance to ground
VI = 0.5 VPP at 1 MHz
3
pF
(1)
Creepage and clearance requirements should be applied according to the specific equipment isolation standards of a specific
application. Take care to maintain the creepage and clearance distance of the board design to ensure that the mounting pads of the
isolator on the printed-circuit-board (PCB) do not reduce this distance. Creepage and clearance on a PCB become equal according to
the measurement techniques shown in the TI Isolation Glossary. Techniques such as inserting grooves and/or ribs on the PCB are used
to help increase these specifications.
7.3.5 IEC Safety Limiting Values
Safety limiting intends to prevent potential damage to the isolation barrier upon failure of input or output (I/O)
circuitry. A failure of the I/O circuitry can allow low resistance to ground or the supply and, without current
limiting, dissipate sufficient power to overheat the die and damage the isolation barrier, potentially leading to
secondary system failures.
PARAMETER
IS
Safety input, output, or supply current
TC
Maximum case temperature
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TEST CONDITIONS
MIN
θJA = 246°C/W, VIN = 5.5 V, TJ = 150°C, TA = 25°C
TYP
MAX
UNIT
10
mA
150
°C
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The safety-limiting constraint is the operating virtual junction temperature range specified in the Absolute
Maximum Ratings table. The power dissipation and junction-to-air thermal impedance of the device installed in
the application hardware determine the junction temperature. The assumed junction-to-air thermal resistance in
the Thermal Information table is that of a device installed in the JESD51-3, Low Effective Thermal Conductivity
Test Board for Leaded Surface Mount Packages and is conservative. The power is the recommended maximum
input voltage times the current. The junction temperature is then the ambient temperature plus the power times
the junction-to-air thermal resistance.
7.3.6 Regulatory Information
VDE/IEC
UL
Certified according to VDE V 0884-10
Recognized under 1577 component recognition program
Certificate number: 40016131
File number: E181974
7.3.7 Isolation Amplifier
The AMC1200 device consists of a second order delta-sigma modulator input stage including an internal
reference and clock generator. The output of the modulator and clock signal are differentially transmitted over the
integrated capacitive isolation barrier that separates the high- and low-voltage domains. The received bitstream
and clock signals are synchronized and processed by a third-order analog filter with a nominal gain of 8 on the
low-side and presented as a differential output of the device, as shown in Functional Block Diagram section.
7.3.8 Analog Input
The analog input range is tailored to directly accommodate a voltage drop across a shunt resistor used for
current sensing. However, there are two restrictions on the analog input signals, VINP and VINN. If the input
voltage exceeds the range AGND – 0.5 V to AVDD + 0.5 V, the input current must be limited to 10 mA to prevent
the implemented input protection diodes from damage. In addition, the linearity and the noise performance of the
device are ensured only when the differential analog input voltage remains within ±250 mV.
The differential analog input of the AMC1200 and AMC1200B devices is a switched-capacitor circuit based on a
second-order modulator stage that digitizes the input signal into a 1-bit output stream. These devices compare
the differential input signal (VIN = VINP – VINN) against the internal reference of 2.5 V using internal capacitors
that are continuously charged and discharged with a typical frequency of 10 MHz. With the S1 switches closed,
CIND charges to the voltage difference across VINP and VINN. For the discharge phase, both S1 switches open
first and then both S2 switches close. CIND discharges to approximately AGND + 0.8 V during this phase.
Figure 31 shows the simplified equivalent input circuitry.
VDD1
GND1
GND1
CINP = 3pF
3pF
400W
VINP
S1
S2
Equivalent
Circuit
AGND + 0.8V
VINP
CIND = 3.6pF
S1
400W
VINN
RIN = 28kW
S2
VINN
AGND + 0.8V
3pF
CINN = 3pF
GND1
RIN =
GND1
1
fCLK · CDIFF
GND1
(fCLK = 10MHz)
Figure 31. Equivalent Input Circuit
7.4 Device Functional Modes
The AMC1200 is operational when the power supplies VDD1 and VDD2 are applied as specified in the
Recommended Operating Conditions section.
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Device Functional Modes (continued)
The AMC1200 does not have any additional functional modes.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The AMC1200 and AMC1200B devices offer unique linearity, high input common mode rejection, low DC errors
and low temperature drift. These features make the AMC1200 a robust, high-performance isolation amplifier for
industrial applications where high voltage isolation is required.
8.2 Typical Applications
8.2.1 Motor Control
Figure 32 shows a typical operation of the AMC1200 and AMC1200B devices in a motor-control application.
Measurement of the motor phase current is done through the shunt resistor, RSHUNT (in this case, a two-terminal
shunt).
HV+
Floating
Power Supply
Gated
Drive
Circuit
Isolation
Barrier
R1
VDD1
D1
5.1V
C5(1)
0.1mF
VINP
To Load
VOUTP
C2(1)
330pF
C3
10pF
(optional)
Power
Supply
VDD2
C1(1)
0.1mF
R2
12W
R3
12W
RSHUNT
TMC320
C/F28xxx
AMC1200
AMC1200B
ADC
C4
10pF
(optional)
VINN VOUTN
GND1
GND2
Gated
Drive
Circuit
HV-
(1)
Place these capacitors as close as possible to the AMC device.
Figure 32. Typical Application Diagram
The high-side power supply (VDD1) for the AMC1200 and AMC1200B are derived from the power supply of the
upper gate driver. Further details are provided in the Power Supply Recommendations section.
The high transient immunity of the AMC1200 and AMC1200B ensures reliable and accurate operation even in
high-noise environments such as the power stages of the motor drives.
As shown in Figure 37, TI recommends placing the bypass and filter capacitors as close as possible to the AMC
device to ensure best performance.
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Typical Applications (continued)
8.2.1.1 Design Requirements
For better performance, the differential input signal is filtered using RC filters (components R2, R3, and C2).
Optionally, C3 and C4 can be used to reduce charge dumping from the inputs. In this case, take care when
choosing the quality of these capacitors; mismatch in values of these capacitors leads to a common mode error
at the modulator input. If implemented, TI recommends using NP0 capacitors for C2, C3 and C4.
Isolation
Barrier
Phase
TMC320
C/F28xxx
R1
Device
1
C1(1)
0.1 mF
R2
12 W
RSHUNT
R3
12 W
2
VDD1
VINP
VDD2
VOUTP
14
13
C5(1)
0.1 mF R
(1)
C2
330 pF
C
3
C3
10 pF
(optional)
C4
10 pF
(optional)
4
VINN VOUTN
GND1
GND2
11
ADC
R
9
Figure 33. Shunt-Based Current Sensing with the AMC1200
Similar to the current measurements, isolated voltage measurements can be performed as described in the .
8.2.1.2 Detailed Design Procedure
The floating ground reference (GND1) is derived from the end of the shunt resistor, which is connected to the
negative input of the AMC1200 (VINN). If a four-terminal shunt is used, the inputs of the AMC1200 are
connected to the inner leads and GND1 is connected to one of the outer shunt leads. The differential input of the
AMC1200 ensures accurate operation even in noisy environments.
TI recommends limiting the value of resistors R2 and R3 to less than 24 Ω to avoid the incomplete settling of the
AMC1200 input circuitry. The section provides more details on the AMC1200 input circuitry.
The differential output of the AMC1200 can either directly drive an analog-to-digital converter (ADC) input or can
be further filtered before being processed by the ADC. For more information on the general procedure to design
the filtering and driving stages for SAR ADCs, consult the TI Precision Designs 18 bit, 1Msps Data Acquisition
Block Optimized for Lowest Distortion and Noise (SLAU515), and 18 bit Data Acquisition Block Optimized for
Lowest Power (SLAU513) available for download at www.ti.com
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Typical Applications (continued)
8.2.1.3 Application Curve
In frequency inverter applications the power switches must be protected in case of an overcurrent condition. To
allow fast powering off of the system, low delay caused by the isolation amplifier is required. Figure 34 shows the
typical full-scale step response of the AMC1200.
500 mV/div
200 mV/div
500 mV/div
Time (2 ms/div)
Figure 34. Typical Step Response of the AMC1200
8.2.2 Isolated Voltage Measurement
The AMC1200 and AMC1200B can also be used for isolated voltage measurement applications, as shown in a
simplified way in Figure 35. In such applications, usually a resistor divider (R1 and R2 in Figure 35) is used to
match the relatively small input voltage range of the AMC device. R2 and the input resistance RIN of the
AMC1200 also create a resistance divider that results in additional gain error. With the assumption that R1 and
RIN have a considerably higher value than R2, the resulting total gain error can be estimated using Equation 1:
R
GERRTOT = GERR + 2
RIN
where
•
GERR = the gain error of AMC device.
(1)
L1
R1
R2
RIN
L2
Figure 35. Voltage Measurement Application
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9 Power Supply Recommendations
In a typical frequency inverter application, the high-side power supply for the AMC1200 (VDD1) is derived from
the system supply, as shown in Figure 36. For lowest cost, a Zener diode can be used to limit the voltage to 5 V
± 10%. TI recommends using a 0.1-µF, low-ESR decoupling capacitor for filtering this power-supply. TI also
recommends using a 0.1-µF decoupling capacitor for filtering the power-supply on the VDD2 side. For best
performance, place these capacitors (C1 and C4) as close as possible to the VDD1 and VDD2 pins respectively.
If better filtering is required, an additional 1-µF to 10-µF capacitor can be used in parallel to C1 and C4.
HV+
Floating
Power Supply
20 V
R1
800
Gate Driver
Z1
1N751A
AMC1200
5.1 V
VDD1
VDD2
3.3 V, or 5.0 V
C4
0.1 F
C1
0.1 F
GND1
GND2
RSHUNT
VINP
to load
R2
12
ADS7263
VINN
Gate Driver
VOUTP
C3
330pF
VOUTN
R3
12
HV-
Figure 36. Zener Diode Based High-Side Supply
For higher power efficiency and better performance, a buck converter can be used; an example of such an
approach is based on the LM5017. A reference design including performance test results and layout
documentation can be downloaded at PMP9480, Isolated Bias Supplies + Isolated Amplifier Combo for Line
Voltage or Current Measurement.
10 Layout
10.1 Layout Guidelines
A layout recommendation showing the critical placement of the decoupling capacitors that be placed as close as
possible to the AMC1200 while maintaining a differential routing of the input signals is shown in Figure 37.
To maintain the isolation barrier and the high CMTI of the device, the distance between the high-side ground
(GND1) and the low-side ground (GND2) should be kept at maximum; that is, the entire area underneath the
device should be kept free of any conducting materials.
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10.2 Layout Example
Top View
12 W
SMD 0603
To Shunt
12 W
SMD 0603
330 pF
SMD
0603
LEGEND
Top layer; copper pour and traces
VDD1
VDD2
VINP
VOUTP
0.1 mF
SMD
1206
0.1mF
0.1 mF
SMD
1206
AMC1200
AMC1200B
VINN
VOUTN
GND1
GND2
To Filter or ADC
SMD
1206
Clearance area.
Keep free of any
conductive materials.
High-side area
Controller-side area
Via
Figure 37. Layout Recommendation
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
• TI Isolation Glossary, SLLA353
• 18 bit, 1Msps Data Acquisition Block Optimized for Lowest Distortion and Noise, SLAU515
• 18 bit Data Acquisition Block Optimized for Lowest Power, SLAU513
• High-Voltage Lifetime of the ISO72x Family of Digital Isolators, SLLA197
• ISO72x Digital Isolator Magnetic-Field Immunity, SLLA181
• AMC1100: Replacement of Input Main Sensing Transformer in Inverters with Isolate Amplifier, SLAA552
• Isolated Current Sensing Reference Design Solution, 5A, 2kV, TIPD121
• Isolated Bias Supplies + Isolated Amplifier Combo for Line Voltage or Current Measurement, PMP9480
• TPS62120 Data Sheet, SLVSAD5
• MSP430F471xx Data Sheet, SLAS626
• SN6501 Data Sheet, SLLSEA0
• LM5017 Data Sheet, SNVS783
11.2 Related Links
The following table lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 1. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
AMC1200
Click here
Click here
Click here
Click here
Click here
AMC1200B
Click here
Click here
Click here
Click here
Click here
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
AMC1200BDUB
ACTIVE
SOP
DUB
8
50
RoHS & Green
NIPDAU
Level-4-260C-72 HR
-40 to 105
1200B
AMC1200BDUBR
ACTIVE
SOP
DUB
8
350
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 105
1200B
AMC1200BDWV
ACTIVE
SOIC
DWV
8
64
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
AMC1200B
AMC1200BDWVR
ACTIVE
SOIC
DWV
8
1000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
AMC1200B
AMC1200SDUB
ACTIVE
SOP
DUB
8
50
RoHS & Green
NIPDAU
Level-4-260C-72 HR
-40 to 105
AMC1200
AMC1200SDUBR
ACTIVE
SOP
DUB
8
350
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 105
AMC1200
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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