AMC1200BDUBR

Product Folder Sample & Buy Support & Community Tools & Software Technical Documents Reference Design AMC1200, AMC1200B SBAS542D – APRIL 2011 – REVISED JULY 2015 AMC1200/B Fully-Differential Isolation Amplifier 1 Features 3 Description • The AMC1200 and AMC1200B are precision isolation amplifiers with an output separated from the input circuitry by a silicon dioxide (SiO2) barrier that is highly resistant to magnetic interference. This barrier has been certified to provide galvanic isolation of up to 4250 VPEAK (AMC1200B) or 4000 VPEAK (AMC1200) according to UL1577 and VDE V 088410. Used in conjunction with isolated power supplies, these devices prevent noise currents on a high common mode voltage line from entering the local ground and interfering with or damaging sensitive circuitry. 1 • • • • • • • • • • • ±250-mV Input Voltage Range Optimized for Shunt Resistors Very Low Nonlinearity: 0.075% Maximum at 5 V Low Offset Error: 1.5 mV Maximum Low Noise: 3.1 mVRMS Typical Low High-Side Supply Current: 8 mA Maximum at 5 V Input Bandwidth: 60 kHz Minimum Fixed Gain: 8 (0.5% accuracy) High Common Mode Rejection Ratio: 108 dB 3.3-V Operation on Low-Side Certified Galvanic Isolation: – UL1577 and VDE V 0884-10 Approved – Isolation Voltage: 4250 VPEAK (AMC1200B) – Working Voltage: 1200 VPEAK – Transient Immunity: 10 kV/µs Minimum Typical 10-Year Lifespan at Rated Working Voltage (see Application Report SLLA197) Fully Specified Over the Extended Industrial Temperature Range 2 Applications • Shunt Resistor Based Current Sensing in: – Motor Control – Green Energy – Frequency Inverters – Uninterruptible Power Supplies The input of the AMC1200 or AMC1200B is optimized for direct connection to shunt resistors or other low voltage level signal sources. The excellent performance of the device supports accurate current control resulting in system-level power saving and, especially in motor-control applications, lower torque ripple. The common mode voltage of the output signal is automatically adjusted to either the 3-V or 5-V low-side supply. The AMC1200 and AMC1200B are fully specified over the extended industrial temperature range of –40°C to 105°C and are available in a wide-body SOIC-8 package (DWV) and a gullwing-8 package (DUB). Device Information(1) PART NUMBER AMC1200, AMC1200B PACKAGE BODY SIZE (NOM) SOP (8) 9.50 mm × 6.57 mm SOIC (8) 5.85 mm × 7.50 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Schematic VDD1 VDD2 5V 2.55 V 0V VINP VOUTP VINN VOUTN 2V 250 mV 3.3 V 1.29 V GND1 2V GND2 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. AMC1200, AMC1200B SBAS542D – APRIL 2011 – REVISED JULY 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 4 4 4 4 5 6 Absolute Maximum Ratings ..................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description ............................................ 11 7.1 Overview ................................................................. 11 7.2 Functional Block Diagram ....................................... 11 7.3 Feature Description................................................. 11 7.4 Device Functional Modes........................................ 13 8 Application and Implementation ........................ 15 8.1 Application Information............................................ 15 8.2 Typical Applications ................................................ 15 9 Power Supply Recommendations...................... 18 10 Layout................................................................... 18 10.1 Layout Guidelines ................................................. 18 10.2 Layout Example .................................................... 19 11 Device and Documentation Support ................. 20 11.1 11.2 11.3 11.4 11.5 11.6 Documentation Support ........................................ Related Links ........................................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 20 20 20 20 20 20 12 Mechanical, Packaging, and Orderable Information ........................................................... 21 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision C (September 2013) to Revision D • Page Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ................................................................................................. 1 Changes from Revision B (August 2012) to Revision C Page • Deleted device graphic ........................................................................................................................................................... 1 • Added DWV (SOIC-9) package to document......................................................................................................................... 1 • Changed last paragraph of Description section ..................................................................................................................... 1 • Added DWV pin out drawing .................................................................................................................................................. 3 • Added DWV column to Thermal Information table ................................................................................................................. 4 • Added row for DWV package to L(I01) and L(I02) parameters in Package Characteristics table ....................................... 12 Changes from Revision A (August 2011) to Revision B Page • Changed Isolation Voltage feature bullet................................................................................................................................ 1 • Added AMC1200B device to data sheet ................................................................................................................................ 1 • Changed title for Figure 25 ................................................................................................................................................... 10 • Changed CTI parameter minimum value in Electrical Characteristics from ≥ 175 to ≥ 400................................................. 12 Changes from Original (April 2011) to Revision A Page • Changed sign for maximum junction temperature from minus to plus (typo)......................................................................... 4 • Added "0.5-V step" to test condition for Rise/fall time parameter .......................................................................................... 5 • Changed Figure 12................................................................................................................................................................. 6 • Changed Figure 13................................................................................................................................................................. 7 • Changed surge immunity parameter from ±4000 to ±6000.................................................................................................. 12 2 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B AMC1200, AMC1200B www.ti.com SBAS542D – APRIL 2011 – REVISED JULY 2015 5 Pin Configuration and Functions DUB Package 8-Pin SOP Top View DWV Package 8-Pin SOIC Top View VDD1 1 8 VDD2 VINP 2 7 VINN 3 GND1 4 VDD1 1 8 VDD2 VOUTP VINP 2 7 VOUTP 6 VOUTN VINN 3 6 VOUTN 5 GND2 GND1 4 5 GND2 Pin Functions PIN I/O DESCRIPTION NO. NAME 1 VDD1 Power 2 VINP Analog input Noninverting analog input 3 VINN Analog input Inverting analog input 4 GND1 Power High-side analog ground 5 GND2 Power Low-side analog ground 6 VOUTN Analog output Inverting analog output 7 VOUTP Analog output Noninverting analog output 8 VDD2 Power High-side power supply Low-side power supply Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B Submit Documentation Feedback 3 AMC1200, AMC1200B SBAS542D – APRIL 2011 – REVISED JULY 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings Over the operating ambient temperature range, unless otherwise noted. (1) Supply voltage, VDD1 to GND1 or VDD2 to GND2 Analog input voltage at VINP, VINN Input current to any pin except supply pins MIN MAX UNIT –0.5 6 V GND1 – 0.5 VDD1 + 0.5 V –10 10 mA 150 °C 150 °C Maximum junction temperature, TJ Max Storage Temperature, Tstg (1) –65 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM) JEDEC standard 22, test method A114C.01 (1) ±2500 Charged-device model (CDM), per JEDEC specification JESD22C101 (2) ±1000 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN TA Operating ambient temperature range –40 VDD1 High-side power supply 4.5 VDD2 Low-side power supply 2.7 NOM MAX UNIT 105 °C 5 5.5 V 5 5.5 V 6.4 Thermal Information AMC1200, AMC1200B THERMAL METRIC (1) DUB (SOP) DWV (SOIC) 8 PINS 8 PINS UNIT RθJA Junction-to-ambient thermal resistance 75.1 102.8 °C/W RθJC(top) Junction-to-case (top) thermal resistance 61.6 49.8 °C/W RθJB Junction-to-board thermal resistance 39.8 56.6 °C/W ψJT Junction-to-top characterization parameter 27.2 16 °C/W ψJB Junction-to-board characterization parameter 39.4 55.2 °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B AMC1200, AMC1200B www.ti.com SBAS542D – APRIL 2011 – REVISED JULY 2015 6.5 Electrical Characteristics All minimum/maximum specifications at TA = –40°C to 105°C and within the specified voltage range, unless otherwise noted. Typical values are at TA = 25°C, VDD1 = 5 V, and VDD2 = 3.3 V. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT Maximum input voltage before clipping VINP – VINN Differential input voltage VINP – VINN ±320 mV –250 250 –0.16 VDD1 mV VCM Common mode operating range VOS Input offset voltage –1.5 ±0.2 1.5 mV TCVOS Input offset thermal drift –10 ±1.5 10 µV/K CMRR Common mode rejection ratio CIN Input capacitance to GND1 CIND Differential input capacitance RIN Differential input resistance VIN from 0 V to 5 V at 0 Hz VIN from 0 V to 5 V at 50 kHz VINP or VINN Small-signal bandwidth 60 V 108 dB 95 dB 3 pF 3.6 pF 28 kΩ 100 kHz OUTPUT Nominal gain GERR Gain error TCGERR Gain error thermal drift Nonlinearity 8 Initial, at TA = 25°C –0.5% ±0.05% 0.5% –1% ±0.05% 1% ±56 4.5 V ≤ VDD2 ≤ 5.5 V –0.075% ±0.015% 0.075% 2.7 V ≤ VDD2 ≤ 3.6 V –0.1% ±0.023% 0.1% Nonlinearity thermal drift Output noise PSRR Power-supply rejection ratio Rise/fall time VIN to VOUT signal delay CMTI ROUT 2.4 ppm/K VINP = VINN = 0 V 3.1 mVRMS vs VDD1, 10-kHz ripple 80 dB vs VDD2, 10-kHz ripple 61 0.5-V step, 10% to 90% 3.66 6.6 µs 0.5-V step, 50% to 10%, unfiltered output 1.6 3.3 µs 0.5-V step, 50% to 50%, unfiltered output 3.15 5.6 µs 0.5-V step, 50% to 90%, unfiltered output 5.26 9.9 µs Common mode transient immunity VCM = 1 kV Output common mode voltage ppm/K dB 10 15 2.7 V ≤ VDD2 ≤ 3.6 V 1.15 1.29 1.45 kV/µs V 4.5 V ≤ VDD2 ≤ 5.5 V 2.4 2.55 2.7 V Short circuit current 20 mA Output resistance 2.5 Ω POWER SUPPLY VDD1 High-side supply voltage 4.5 VDD2 Low-side supply voltage 2.7 IDD1 High-side supply current IDD2 Low-side supply current PDD1 High-side power dissipation PDD2 Low-side power dissipation 5 5.5 V 5 5.5 5.4 8 mA 2.7 V < VDD2 < 3.6 V 3.8 6 mA 4.5 V < VDD2 < 5.5 V 4.4 7 mA 27 44 mW 2.7 V < VDD2 < 3.6 V 11.4 21.6 mW 4.5 V < VDD2 < 5.5 V 22 38.5 mW Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B Submit Documentation Feedback V 5 AMC1200, AMC1200B SBAS542D – APRIL 2011 – REVISED JULY 2015 www.ti.com 6.6 Typical Characteristics At VDD1 = VDD2 = 5 V, VINP = –250 mV to 250 mV, and VINN = 0 V, unless otherwise noted. 2 2 1.5 1.5 1 1 Input Offset (mV) Input Offset (mV) VDD2 = 2.7 V to 3.6 V 0.5 0 −0.5 0.5 0 −0.5 −1 −1 −1.5 −1.5 −2 4.5 4.75 5 VDD1 (V) 5.25 −2 2.7 5.5 3 3.3 3.6 VDD2 (V) Figure 1. Input Offset vs High-Side Supply Voltage Figure 2. Input Offset vs Low-Side Supply Voltage 2 2 1.5 1 1 Input Offset (mV) Input Offset (mV) VDD2 = 4.5 V to 5.5 V 1.5 0.5 0 −0.5 0.5 0 −0.5 −1 −1 −1.5 −1.5 −2 4.5 4.75 5 VDD2 (V) 5.25 −2 −40 −25 −10 5.5 130 40 120 30 110 20 100 90 80 −30 Figure 5. Common Mode Rejection Ratio vs Input Frequency 6 Submit Documentation Feedback 110 125 −10 60 100 95 0 −20 1 10 Input Frequency (kHz) 80 10 70 50 0.1 20 35 50 65 Temperature (°C) Figure 4. Input Offset vs Temperature Input Current (µA) CMRR (dB) Figure 3. Input Offset vs Low-Side Supply Voltage 5 −40 −400 −300 −200 −100 0 100 Input Voltage (mV) 200 300 400 Figure 6. Input Current vs Input Voltage Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B AMC1200, AMC1200B www.ti.com SBAS542D – APRIL 2011 – REVISED JULY 2015 Typical Characteristics (continued) At VDD1 = VDD2 = 5 V, VINP = –250 mV to 250 mV, and VINN = 0 V, unless otherwise noted. 120 1 0.8 0.6 0.4 100 Gain Error (%) Input Bandwidth (kHz) 110 90 80 0.2 0 −0.2 −0.4 −0.6 70 −0.8 60 −40 −25 −10 5 20 35 50 65 Temperature (°C) 80 95 −1 4.5 110 125 Figure 7. Input Bandwidth vs Temperature 5.25 5.5 1 VDD2 = 2.7 V to 3.6 V 0.6 0.6 0.4 0.4 0.2 0 −0.2 0.2 0 −0.2 −0.4 −0.4 −0.6 −0.6 −0.8 −0.8 −1 2.7 3 3.3 VDD2 = 4.5 V to 5.5 V 0.8 Gain Error (%) Gain Error (%) 5 VDD1 (V) Figure 8. Gain Error vs High-Side Supply Voltage 1 0.8 −1 4.5 3.6 VDD2 (V) Figure 9. Gain Error vs Low-Side Supply Voltage 0.8 0 0.6 −10 Normalized Gain (dB) 10 0.2 0 −0.2 −0.4 −50 −70 80 95 Figure 11. Gain Error vs Temperature 110 125 5.5 −40 −0.8 20 35 50 65 Temperature (°C) 5.25 −30 −60 5 5 VDD2 (V) −20 −0.6 −1 −40 −25 −10 4.75 Figure 10. Gain Error vs Low-Side Supply Voltage 1 0.4 Gain Error (%) 4.75 −80 1 10 100 Input Frequency (kHz) 500 Figure 12. Normalized Gain vs Input Frequency Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B Submit Documentation Feedback 7 AMC1200, AMC1200B SBAS542D – APRIL 2011 – REVISED JULY 2015 www.ti.com Typical Characteristics (continued) At VDD1 = VDD2 = 5 V, VINP = –250 mV to 250 mV, and VINN = 0 V, unless otherwise noted. 0 5 −30 4.5 −60 VOUTP VOUTN 4 Output Voltage (V) Output Phase (°) −90 −120 −150 −180 −210 −240 3.5 3 2.5 2 1.5 −270 1 −300 0.5 −330 −360 1 10 100 Input Frequency (kHz) 0 −400 1000 Figure 13. Output Phase vs Input Frequency −200 −100 0 100 Input Voltage (mV) 200 300 400 Figure 14. Output Voltage vs Input Voltage 3.6 3.3 −300 0.1 VDD2 = 2.7 V to 3.6 V VOUTP VOUTN 3 0.08 0.06 2.4 Nonlinearity (%) Output Voltage (V) 2.7 2.1 1.8 1.5 1.2 0.04 0.02 0 −0.02 −0.04 0.9 −0.06 0.6 −0.08 0.3 0 −400 −300 −200 −100 0 100 Input Voltage (mV) 200 300 −0.1 4.5 400 Figure 15. Output Voltage vs Input Voltage VDD2 = 2.7 V to 3.6 V 5.5 0.06 0.06 0.04 0.04 0.02 0 −0.02 −0.04 0.02 0 −0.02 −0.04 −0.06 −0.06 −0.08 −0.08 3 3.3 3.6 VDD2 = 4.5 V to 5.5 V 0.08 Nonlinearity (%) Nonlinearity (%) 5.25 0.1 0.08 −0.1 4.5 4.75 VDD2 (V) Figure 17. Nonlinearity vs Low-Side Supply Voltage 8 5 VDD1 (V) Figure 16. Nonlinearity vs High-Side Supply Voltage 0.1 −0.1 2.7 4.75 Submit Documentation Feedback 5 VDD2 (V) 5.25 5.5 Figure 18. Nonlinearity vs Low-Side Supply Voltage Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B AMC1200, AMC1200B www.ti.com SBAS542D – APRIL 2011 – REVISED JULY 2015 Typical Characteristics (continued) At VDD1 = VDD2 = 5 V, VINP = –250 mV to 250 mV, and VINN = 0 V, unless otherwise noted. 0.1 0.1 VDD2 = 3 V VDD2 = 5 V 0.08 0.06 0.06 0.04 0.04 Nonlinearity (%) Nonlinearity (%) 0.08 0.02 0 −0.02 −0.04 0.02 0 −0.02 −0.04 −0.06 −0.06 −0.08 −0.08 −0.1 −250 −200 −150 −100 −50 0 50 100 Input Voltage (mV) 150 200 −0.1 −40 −25 −10 250 2600 100 2400 90 2200 80 2000 70 1800 1600 1400 110 125 20 800 10 100 VDD1 VDD2 40 30 10 95 50 1000 1 80 60 1200 600 0.1 20 35 50 65 Temperature (°C) Figure 20. Nonlinearity vs Temperature PSRR (dB) Noise (nV/sqrt(Hz)) Figure 19. Nonlinearity vs Input Voltage 5 0 1 10 Ripple Frequency (kHz) Frequency (kHz) Figure 21. Output Noise Density vs Frequency 100 Figure 22. Power-Supply Rejection Ratio vs Ripple Frequency 10 Output Rise/Fall Time (µs) 9 8 500 mV/div 7 6 5 4 200 mV/div 3 2 500 mV/div 1 0 −40 −25 −10 5 20 35 50 65 Temperature (°C) 80 95 Time (2 ms/div) 110 125 Figure 23. Output Rise and Fall Time vs Temperature Figure 24. Full-Scale Step Response Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B Submit Documentation Feedback 9 AMC1200, AMC1200B SBAS542D – APRIL 2011 – REVISED JULY 2015 www.ti.com Typical Characteristics (continued) At VDD1 = VDD2 = 5 V, VINP = –250 mV to 250 mV, and VINN = 0 V, unless otherwise noted. 10 5 8 Signal Delay (µs) 7 6 5 4 3 2 1 0 −40 −25 −10 5 20 35 50 65 Temperature (°C) 80 95 VDD2 rising VDD2 falling Output Common−Mode Voltage (V) 50% to 10% 50% to 50% 50% to 90% 9 4 3 2 1 0 3.5 110 125 Figure 25. Output Signal Delay Time vs Temperature 3.7 3.8 3.9 4 4.1 VDD2 (V) 4.2 4.3 4.4 4.5 Figure 26. Output Common Mode Voltage vs Low-Side Supply Voltage 5 8 VDD2 = 2.7 V to 3.6 V VDD2 = 4.5 V to 5.5 V Output Common−Mode Voltage (V) 3.6 IDD1 IDD2 7 Supply Current (mA) 4 3 2 6 5 4 3 2 1 1 0 −40 −25 −10 5 20 35 50 65 Temperature (°C) 80 95 0 4.5 110 125 Figure 27. Output Common Mode Voltage vs Temperature 4.75 5 Supply Voltage (V) 5.25 5.5 Figure 28. Supply Current vs Supply Voltage 8 8 7 6 6 Supply Current (mA) IDD2 (mA) VDD2 = 2.7 V to 3.6 V 7 5 4 3 2 1 0 2.7 5 4 3 2 1 3 3.3 3.6 IDD1 IDD2 0 −40 −25 −10 VDD2 (V) Figure 29. Low-Side Supply Current vs Low-Side Supply Voltage 10 Submit Documentation Feedback 5 20 35 50 65 Temperature (°C) 80 95 110 125 Figure 30. Supply Current vs Temperature Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B AMC1200, AMC1200B www.ti.com SBAS542D – APRIL 2011 – REVISED JULY 2015 7 Detailed Description 7.1 Overview The AMC1200 is a fully-differential precision isolation amplifier. The analog input signal is converted to a digital signal and then transferred across a capacitive isolation barrier. The digital modulation used in the AMC1200 together with the isolation barrier characteristics result in excellent reliability and transient immunity. After processing the digital signal with a low-pass filter, an analog signal is provided at the outputs. The main building blocks are shown in the Functional Block Diagram section. The SiO2-based capacitive isolation barrier supports a high level of magnetic field immunity, as described in application report, ISO72x Digital Isolator Magnetic-Field Immunity (SLLA181), available for download at www.ti.com. 7.2 Functional Block Diagram VDD1 VDD2 Isolation Barrier 2.5-V Reference 2.56-V Reference DATA TX RX VINP VOUTP Retiming and 3rd order active low-pass filter û-Modulator VINN TX VOUTN RX CLK RC oscillator GND1 GND2 7.3 Feature Description 7.3.1 Insulation Characteristics PARAMETER VIORM VPR VIOTM VISO RS TEST CONDITIONS MIN TYP MAX UNIT 1200 VPEAK Qualification test: after Input/Output Safety Test Subgroup 2/3 VPR = VIORM × 1.2, t = 10 s, partial discharge < 5 pC 1140 VPEAK Qualification test: method a, after environmental tests subgroup 1, VPR = VIORM × 1.6, t = 10 s, partial discharge < 5 pC 1920 VPEAK 100% production test: method b1, VPR = VIORM x 1.875, t = 1 s, partial discharge < 5 pC 2250 VPEAK AMC1200 4000 VPEAK AMC1200B 4250 VPEAK Qualification test: VTEST = VISO, t = 60 s AMC1200 4000 VPEAK AMC1200B 4250 VPEAK 100% production test: VTEST = 1.2 x VISO, t = 1 s AMC1200 4800 VPEAK 5100 VPEAK Maximum working insulation voltage Input to output test voltage Transient overvoltage Qualification test: t = 60 s Insulation voltage per UL Insulation resistance AMC1200B VIO = 500 V at TS Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B > 109 Submit Documentation Feedback Ω 11 AMC1200, AMC1200B SBAS542D – APRIL 2011 – REVISED JULY 2015 www.ti.com Feature Description (continued) PARAMETER PD TEST CONDITIONS MIN TYP Pollution degree MAX UNIT 2 ° 7.3.2 IEC 61000-4-5 Ratings PARAMETER VIOSM TEST CONDITIONS Surge immunity 1.2-μs/50-μs voltage surge and 8-μs/20-μs current surge VALUE UNIT ±6000 V 7.3.3 IEC 60664-1 Ratings (1) PARAMETER TEST CONDITIONS Basic isolation group Installation classification (1) SPECIFICATION Material group II Rated mains voltage ≤ 150 VRMS I-IV Rated mains voltage ≤ 300 VRMS I-IV Rated mains voltage ≤ 400 VRMS I-III Rated mains voltage < 600 VRMS I-III Over operating free-air temperature range (unless otherwise noted). 7.3.4 Package Characteristics (1) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT L(I01) Minimum air gap (clearance) Shortest terminal to terminal distance through air DWV package DUB package 7 mm Minimum external tracking (creepage) Shortest terminal to terminal distance across the package surface DWV package 8 mm L(I02) DUB package 7 mm CTI Tracking resistance (comparative tracking index) DIN IEC 60112/VDE 0303 part 1 ≥ 400 V Minimum internal gap (internal clearance) Distance through the insulation 0.014 mm RIO Isolation resistance 8 mm Input to output, VIO = 500 V, all pins on each side of the barrier tied together to create a two-terminal device, TA < 85°C > 1012 Ω Input to output, VIO = 500 V, 85°C ≤ TA < TA max > 1011 Ω CIO Barrier capacitance input to output VI = 0.5 VPP at 1 MHz 1.2 pF CI Input capacitance to ground VI = 0.5 VPP at 1 MHz 3 pF (1) Creepage and clearance requirements should be applied according to the specific equipment isolation standards of a specific application. Take care to maintain the creepage and clearance distance of the board design to ensure that the mounting pads of the isolator on the printed-circuit-board (PCB) do not reduce this distance. Creepage and clearance on a PCB become equal according to the measurement techniques shown in the TI Isolation Glossary. Techniques such as inserting grooves and/or ribs on the PCB are used to help increase these specifications. 7.3.5 IEC Safety Limiting Values Safety limiting intends to prevent potential damage to the isolation barrier upon failure of input or output (I/O) circuitry. A failure of the I/O circuitry can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheat the die and damage the isolation barrier, potentially leading to secondary system failures. PARAMETER IS Safety input, output, or supply current TC Maximum case temperature 12 Submit Documentation Feedback TEST CONDITIONS MIN θJA = 246°C/W, VIN = 5.5 V, TJ = 150°C, TA = 25°C TYP MAX UNIT 10 mA 150 °C Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B AMC1200, AMC1200B www.ti.com SBAS542D – APRIL 2011 – REVISED JULY 2015 The safety-limiting constraint is the operating virtual junction temperature range specified in the Absolute Maximum Ratings table. The power dissipation and junction-to-air thermal impedance of the device installed in the application hardware determine the junction temperature. The assumed junction-to-air thermal resistance in the Thermal Information table is that of a device installed in the JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages and is conservative. The power is the recommended maximum input voltage times the current. The junction temperature is then the ambient temperature plus the power times the junction-to-air thermal resistance. 7.3.6 Regulatory Information VDE/IEC UL Certified according to VDE V 0884-10 Recognized under 1577 component recognition program Certificate number: 40016131 File number: E181974 7.3.7 Isolation Amplifier The AMC1200 device consists of a second order delta-sigma modulator input stage including an internal reference and clock generator. The output of the modulator and clock signal are differentially transmitted over the integrated capacitive isolation barrier that separates the high- and low-voltage domains. The received bitstream and clock signals are synchronized and processed by a third-order analog filter with a nominal gain of 8 on the low-side and presented as a differential output of the device, as shown in Functional Block Diagram section. 7.3.8 Analog Input The analog input range is tailored to directly accommodate a voltage drop across a shunt resistor used for current sensing. However, there are two restrictions on the analog input signals, VINP and VINN. If the input voltage exceeds the range AGND – 0.5 V to AVDD + 0.5 V, the input current must be limited to 10 mA to prevent the implemented input protection diodes from damage. In addition, the linearity and the noise performance of the device are ensured only when the differential analog input voltage remains within ±250 mV. The differential analog input of the AMC1200 and AMC1200B devices is a switched-capacitor circuit based on a second-order modulator stage that digitizes the input signal into a 1-bit output stream. These devices compare the differential input signal (VIN = VINP – VINN) against the internal reference of 2.5 V using internal capacitors that are continuously charged and discharged with a typical frequency of 10 MHz. With the S1 switches closed, CIND charges to the voltage difference across VINP and VINN. For the discharge phase, both S1 switches open first and then both S2 switches close. CIND discharges to approximately AGND + 0.8 V during this phase. Figure 31 shows the simplified equivalent input circuitry. VDD1 GND1 GND1 CINP = 3pF 3pF 400W VINP S1 S2 Equivalent Circuit AGND + 0.8V VINP CIND = 3.6pF S1 400W VINN RIN = 28kW S2 VINN AGND + 0.8V 3pF CINN = 3pF GND1 RIN = GND1 1 fCLK · CDIFF GND1 (fCLK = 10MHz) Figure 31. Equivalent Input Circuit 7.4 Device Functional Modes The AMC1200 is operational when the power supplies VDD1 and VDD2 are applied as specified in the Recommended Operating Conditions section. Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B Submit Documentation Feedback 13 AMC1200, AMC1200B SBAS542D – APRIL 2011 – REVISED JULY 2015 www.ti.com Device Functional Modes (continued) The AMC1200 does not have any additional functional modes. 14 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B AMC1200, AMC1200B www.ti.com SBAS542D – APRIL 2011 – REVISED JULY 2015 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The AMC1200 and AMC1200B devices offer unique linearity, high input common mode rejection, low DC errors and low temperature drift. These features make the AMC1200 a robust, high-performance isolation amplifier for industrial applications where high voltage isolation is required. 8.2 Typical Applications 8.2.1 Motor Control Figure 32 shows a typical operation of the AMC1200 and AMC1200B devices in a motor-control application. Measurement of the motor phase current is done through the shunt resistor, RSHUNT (in this case, a two-terminal shunt). HV+ Floating Power Supply Gated Drive Circuit Isolation Barrier R1 VDD1 D1 5.1V C5(1) 0.1mF VINP To Load VOUTP C2(1) 330pF C3 10pF (optional) Power Supply VDD2 C1(1) 0.1mF R2 12W R3 12W RSHUNT TMC320 C/F28xxx AMC1200 AMC1200B ADC C4 10pF (optional) VINN VOUTN GND1 GND2 Gated Drive Circuit HV- (1) Place these capacitors as close as possible to the AMC device. Figure 32. Typical Application Diagram The high-side power supply (VDD1) for the AMC1200 and AMC1200B are derived from the power supply of the upper gate driver. Further details are provided in the Power Supply Recommendations section. The high transient immunity of the AMC1200 and AMC1200B ensures reliable and accurate operation even in high-noise environments such as the power stages of the motor drives. As shown in Figure 37, TI recommends placing the bypass and filter capacitors as close as possible to the AMC device to ensure best performance. Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B Submit Documentation Feedback 15 AMC1200, AMC1200B SBAS542D – APRIL 2011 – REVISED JULY 2015 www.ti.com Typical Applications (continued) 8.2.1.1 Design Requirements For better performance, the differential input signal is filtered using RC filters (components R2, R3, and C2). Optionally, C3 and C4 can be used to reduce charge dumping from the inputs. In this case, take care when choosing the quality of these capacitors; mismatch in values of these capacitors leads to a common mode error at the modulator input. If implemented, TI recommends using NP0 capacitors for C2, C3 and C4. Isolation Barrier Phase TMC320 C/F28xxx R1 Device 1 C1(1) 0.1 mF R2 12 W RSHUNT R3 12 W 2 VDD1 VINP VDD2 VOUTP 14 13 C5(1) 0.1 mF R (1) C2 330 pF C 3 C3 10 pF (optional) C4 10 pF (optional) 4 VINN VOUTN GND1 GND2 11 ADC R 9 Figure 33. Shunt-Based Current Sensing with the AMC1200 Similar to the current measurements, isolated voltage measurements can be performed as described in the . 8.2.1.2 Detailed Design Procedure The floating ground reference (GND1) is derived from the end of the shunt resistor, which is connected to the negative input of the AMC1200 (VINN). If a four-terminal shunt is used, the inputs of the AMC1200 are connected to the inner leads and GND1 is connected to one of the outer shunt leads. The differential input of the AMC1200 ensures accurate operation even in noisy environments. TI recommends limiting the value of resistors R2 and R3 to less than 24 Ω to avoid the incomplete settling of the AMC1200 input circuitry. The section provides more details on the AMC1200 input circuitry. The differential output of the AMC1200 can either directly drive an analog-to-digital converter (ADC) input or can be further filtered before being processed by the ADC. For more information on the general procedure to design the filtering and driving stages for SAR ADCs, consult the TI Precision Designs 18 bit, 1Msps Data Acquisition Block Optimized for Lowest Distortion and Noise (SLAU515), and 18 bit Data Acquisition Block Optimized for Lowest Power (SLAU513) available for download at www.ti.com 16 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B AMC1200, AMC1200B www.ti.com SBAS542D – APRIL 2011 – REVISED JULY 2015 Typical Applications (continued) 8.2.1.3 Application Curve In frequency inverter applications the power switches must be protected in case of an overcurrent condition. To allow fast powering off of the system, low delay caused by the isolation amplifier is required. Figure 34 shows the typical full-scale step response of the AMC1200. 500 mV/div 200 mV/div 500 mV/div Time (2 ms/div) Figure 34. Typical Step Response of the AMC1200 8.2.2 Isolated Voltage Measurement The AMC1200 and AMC1200B can also be used for isolated voltage measurement applications, as shown in a simplified way in Figure 35. In such applications, usually a resistor divider (R1 and R2 in Figure 35) is used to match the relatively small input voltage range of the AMC device. R2 and the input resistance RIN of the AMC1200 also create a resistance divider that results in additional gain error. With the assumption that R1 and RIN have a considerably higher value than R2, the resulting total gain error can be estimated using Equation 1: R GERRTOT = GERR + 2 RIN where • GERR = the gain error of AMC device. (1) L1 R1 R2 RIN L2 Figure 35. Voltage Measurement Application Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B Submit Documentation Feedback 17 AMC1200, AMC1200B SBAS542D – APRIL 2011 – REVISED JULY 2015 www.ti.com 9 Power Supply Recommendations In a typical frequency inverter application, the high-side power supply for the AMC1200 (VDD1) is derived from the system supply, as shown in Figure 36. For lowest cost, a Zener diode can be used to limit the voltage to 5 V ± 10%. TI recommends using a 0.1-µF, low-ESR decoupling capacitor for filtering this power-supply. TI also recommends using a 0.1-µF decoupling capacitor for filtering the power-supply on the VDD2 side. For best performance, place these capacitors (C1 and C4) as close as possible to the VDD1 and VDD2 pins respectively. If better filtering is required, an additional 1-µF to 10-µF capacitor can be used in parallel to C1 and C4. HV+ Floating Power Supply 20 V R1 800  Gate Driver Z1 1N751A AMC1200 5.1 V VDD1 VDD2 3.3 V, or 5.0 V C4 0.1F C1 0.1F GND1 GND2 RSHUNT VINP to load R2 12  ADS7263 VINN Gate Driver VOUTP C3 330pF VOUTN R3 12  HV- Figure 36. Zener Diode Based High-Side Supply For higher power efficiency and better performance, a buck converter can be used; an example of such an approach is based on the LM5017. A reference design including performance test results and layout documentation can be downloaded at PMP9480, Isolated Bias Supplies + Isolated Amplifier Combo for Line Voltage or Current Measurement. 10 Layout 10.1 Layout Guidelines A layout recommendation showing the critical placement of the decoupling capacitors that be placed as close as possible to the AMC1200 while maintaining a differential routing of the input signals is shown in Figure 37. To maintain the isolation barrier and the high CMTI of the device, the distance between the high-side ground (GND1) and the low-side ground (GND2) should be kept at maximum; that is, the entire area underneath the device should be kept free of any conducting materials. 18 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B AMC1200, AMC1200B www.ti.com SBAS542D – APRIL 2011 – REVISED JULY 2015 10.2 Layout Example Top View 12 W SMD 0603 To Shunt 12 W SMD 0603 330 pF SMD 0603 LEGEND Top layer; copper pour and traces VDD1 VDD2 VINP VOUTP 0.1 mF SMD 1206 0.1mF 0.1 mF SMD 1206 AMC1200 AMC1200B VINN VOUTN GND1 GND2 To Filter or ADC SMD 1206 Clearance area. Keep free of any conductive materials. High-side area Controller-side area Via Figure 37. Layout Recommendation Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B 19 AMC1200, AMC1200B SBAS542D – APRIL 2011 – REVISED JULY 2015 www.ti.com 11 Device and Documentation Support 11.1 Documentation Support 11.1.1 Related Documentation For related documentation see the following: • TI Isolation Glossary, SLLA353 • 18 bit, 1Msps Data Acquisition Block Optimized for Lowest Distortion and Noise, SLAU515 • 18 bit Data Acquisition Block Optimized for Lowest Power, SLAU513 • High-Voltage Lifetime of the ISO72x Family of Digital Isolators, SLLA197 • ISO72x Digital Isolator Magnetic-Field Immunity, SLLA181 • AMC1100: Replacement of Input Main Sensing Transformer in Inverters with Isolate Amplifier, SLAA552 • Isolated Current Sensing Reference Design Solution, 5A, 2kV, TIPD121 • Isolated Bias Supplies + Isolated Amplifier Combo for Line Voltage or Current Measurement, PMP9480 • TPS62120 Data Sheet, SLVSAD5 • MSP430F471xx Data Sheet, SLAS626 • SN6501 Data Sheet, SLLSEA0 • LM5017 Data Sheet, SNVS783 11.2 Related Links The following table lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy. Table 1. Related Links PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY AMC1200 Click here Click here Click here Click here Click here AMC1200B Click here Click here Click here Click here Click here 11.3 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.4 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 11.5 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 11.6 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 20 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B AMC1200, AMC1200B www.ti.com SBAS542D – APRIL 2011 – REVISED JULY 2015 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: AMC1200 AMC1200B Submit Documentation Feedback 21 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) AMC1200BDUB ACTIVE SOP DUB 8 50 RoHS & Green NIPDAU Level-4-260C-72 HR -40 to 105 1200B AMC1200BDUBR ACTIVE SOP DUB 8 350 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 105 1200B AMC1200BDWV ACTIVE SOIC DWV 8 64 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 105 AMC1200B AMC1200BDWVR ACTIVE SOIC DWV 8 1000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 105 AMC1200B AMC1200SDUB ACTIVE SOP DUB 8 50 RoHS & Green NIPDAU Level-4-260C-72 HR -40 to 105 AMC1200 AMC1200SDUBR ACTIVE SOP DUB 8 350 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 105 AMC1200 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of