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AMC1301
SBAS667F – APRIL 2016 – REVISED APRIL 2020
AMC1301 Precision, ±250-mV Input, 3-µs Delay, Reinforced Isolated Amplifier
1 Features
3 Description
•
The AMC1301 is a precision, isolated amplifier with
an output separated from the input circuitry by an
isolation barrier that is highly resistant to magnetic
interference. This barrier is certified to provide
reinforced galvanic isolation of up to 7 kVPEAK
according to VDE V 0884-11 and UL1577. Used in
conjunction with isolated power supplies, this device
prevents noise currents on a high common-mode
voltage line from entering the local ground and
interfering with or damaging sensitive circuitry.
1
•
•
•
•
•
•
•
•
±250-mV input voltage range optimized for current
measurement using shunt resistors
Low offset error and drift:
±200 µV at 25°C, ± 3 µV/°C
Fixed gain: 8.2
Very low gain error and drift:
±0.3% at 25°C, ± 50 ppm/°C
Very low nonlinearity and drift:
0.03%, 1 ppm/°C
3.3-V operation on high-side and low-side
System-level diagnostic features
Safety-related certifications:
– 7000-VPK reinforced isolation per
DIN VDE V 0884-11: 2017-01
– 5000-VRMS isolation for 1 minute per UL1577
– CAN/CSA no. 5A-component acceptance
service notice and
IEC 62368-1 end equipment standard
Fully specified over the extended industrial
temperature range
2 Applications
•
•
The input of the AMC1301 is optimized for direct
connection to shunt resistors or other low voltagelevel signal sources. The excellent performance of
the device supports accurate current control resulting
in system-level power savings and, especially in
motor control applications, lower torque ripple. The
integrated common-mode overvoltage and missing
high-side supply voltage detection features of the
AMC1301
simplify
system-level
design
and
diagnostics.
The AMC1301 is fully specified over the extended
industrial temperature range of –40°C to +125°C and
is available in a wide-body 8-pin SOIC (DWV)
package. The AMC1301S is specified over the
temperature range of –55°C to +125°C.
Device Information(1)
Shunt-resistor-based current sensing in:
– Motor drives
– Frequency inverters
– Uninterruptible power supplies
Isolated voltage sensing
PART NUMBER
AMC1301
PACKAGE
SOIC (8)
BODY SIZE (NOM)
5.85 mm × 7.50 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
Floating
Power Supply
Gate
Driver
3.3 V or
5.0 V
AMC1301
GND1
RSHUNT
VDD2
VDD1
VINN
To Load
VINP
Reinforced Isolation
HV+
3.3 V or 5.0 V
GND2
VOUTP
ADS7263
14-Bit ADC
VOUTN
Gate
Driver
HV-
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
AMC1301
SBAS667F – APRIL 2016 – REVISED APRIL 2020
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
7.11
1
1
1
2
4
4
5
Absolute Maximum Ratings ...................................... 5
ESD Ratings.............................................................. 5
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 5
Power Ratings........................................................... 5
Insulation Specifications............................................ 6
Safety-Related Certifications..................................... 7
Safety Limiting Values .............................................. 7
Electrical Characteristics........................................... 7
Insulation Characteristics Curves .......................... 9
Typical Characteristics .......................................... 10
8
Parameter Measurement Information ................ 17
9
Detailed Description ............................................ 18
8.1 Timing Diagrams ..................................................... 17
9.1
9.2
9.3
9.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
18
18
18
19
10 Application and Implementation........................ 20
10.1 Application Information.......................................... 20
10.2 Typical Applications .............................................. 20
10.3 What To Do and What Not TO Do........................ 24
11 Power Supply Recommendations ..................... 25
12 Layout................................................................... 26
12.1 Layout Guidelines ................................................. 26
12.2 Layout Example .................................................... 26
13 Device and Documentation Support ................. 27
13.1
13.2
13.3
13.4
13.5
13.6
13.7
Device Support......................................................
Documentation Support .......................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
27
27
27
27
27
27
27
14 Mechanical, Packaging, and Orderable
Information ........................................................... 27
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision E (March 2018) to Revision F
Page
•
Changed safety-related certifications details as per ISO standard ....................................................................................... 1
•
Changed IEC 60950-1 and IEC60065 to IEC 62368-1 .......................................................................................................... 1
•
Changed VDE V 0884-10 to VDE V 0884-11 in Description section ..................................................................................... 1
•
Changed TA parameter from specified to operating in Device Comparison Table................................................................. 4
•
Changed CLR and CPG values from 9 mm to 8.5 mm.......................................................................................................... 6
•
Changed Insulation Specifications table per ISO standard .................................................................................................... 6
•
Changed Safety-Related Certification table per ISO standard............................................................................................... 7
•
Changed Safety Limiting Values description as per ISO standard ........................................................................................ 7
•
Changed Rise and Fall Time Test Waveforms figure........................................................................................................... 17
•
Changed Delay Time Test Waveforms figure ...................................................................................................................... 17
•
Changed Functional Block Diagram figure ........................................................................................................................... 18
Changes from Revision D (January 2017) to Revision E
Page
•
Added AMC1301S device to document ................................................................................................................................ 1
•
Added last sentence to Description section .......................................................................................................................... 1
•
Added Device Comparison Table section .............................................................................................................................. 4
•
Added AMC1301S row to TA parameter in Recommended Operating Conditions table ....................................................... 5
•
Added AMC1301S row to Climatic category parameter of Insulation Specifications table ................................................... 6
•
Added AMC1301S temperature range to conditions statement of Electrical Characteristics table ...................................... 7
•
Added AMC1301S row to TCVOS parameter in Electrical Characteristics table..................................................................... 7
•
Changed IIB parameter specification and conditions .............................................................................................................. 7
2
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SBAS667F – APRIL 2016 – REVISED APRIL 2020
•
Added AMC1301S row to TCEG parameter in Electrical Characteristics table ..................................................................... 8
•
Changed all temperature plots in Typical Characteristics section to cover –55°C for the AMC1301S and added
respective footnote ............................................................................................................................................................... 10
•
Changed Input Bias Current vs Common-Mode Input Voltage figure to align with new test condition................................ 11
•
Changed Input Bias Current vs High-Side Supply Voltage figure to align with new test condition...................................... 11
•
Changed Input Bias Current vs Temperature figure to align with new test condition .......................................................... 12
•
Changed legend of Output Voltage vs Input Voltage figure, VOUTP is now red and VOUTN is now black .............................. 13
Changes from Revision C (September 2016) to Revision D
Page
•
Changed VDD1 to VDD2 in test conditions of IDD2 and PDD2 parameters of Electrical Characteristics table ........................ 8
•
Changed VDD2 to VDD1 in conditions of Gain Error Histogram figures ............................................................................. 12
Changes from Revision B (June 2016) to Revision C
Page
•
Changed 12-Bit ADC to 14-Bit ADC in Simplified Schematic figure ...................................................................................... 1
•
Changed maximum specification of Supply voltage row in Absolute Maximum Ratings table ............................................. 5
•
Changed 12-Bit ADC to 14-Bit ADC in Zener-Diode Based, High Side Power Supply figure in Power Supply
Recommendations section ................................................................................................................................................... 25
Changes from Revision A (April 2016) to Revision B
Page
•
Changed Features bullet from "Safety and Regulatory Approvals" to "Safety-Related Certifications" .................................. 1
•
Changed Simplified Schematic figure in Device Information table......................................................................................... 1
•
Changed section title from "Regulatory Information" to "Safety-Related Certifications" ....................................................... 7
•
Changed VCM test conditions in Electrical Characteristics table............................................................................................. 7
•
Added VIN footnote to Electrical Characteristics table ........................................................................................................... 7
•
Changed VIN test conditions in Electrical Characteristics table .............................................................................................. 7
•
Changed VIN units in Electrical Characteristics table ............................................................................................................. 7
•
Changed common-mode rejection ratio test condition in Electrical Characteristics table...................................................... 7
•
Changed RIN parameter information in Electrical Characteristics table.................................................................................. 7
•
Changed output noise equation in Electrical Characteristics table ........................................................................................ 8
•
Deleted "Safety and" from Insulation Characteristics Curves section title ............................................................................ 9
•
Changed Using the AMC1301 for Current Sensing in Frequency Inverters figure in Application Information..................... 20
•
Changed Zener-Diode Based, High Side Power Supply figure in Power Supply Recommendations ................................. 25
•
Added a paragraph and changed the formatting of the Related Documentation section ................................................... 27
Changes from Original (April 2016) to Revision A
•
Page
Released to production .......................................................................................................................................................... 1
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SBAS667F – APRIL 2016 – REVISED APRIL 2020
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5 Device Comparison Table
PARAMETER
Operating ambient temperature, TA
AMC1301S
AMC1301
–55°C to +125°C
–40°C to +125°C
±4 µV/°C (max)
±3 µV/°C (max)
±60 ppm/°C (max)
±50 ppm/°C (max)
Input offset drift, TCVOS
Gain error drift, TCEG
6 Pin Configuration and Functions
DWV Package
8-Pin SOIC
Top View
VDD1
1
8
VDD2
VINP
2
7
VOUTP
VINN
3
6
VOUTN
GND1
4
5
GND2
Not to scale
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
GND1
4
—
High-side analog ground
GND2
5
—
Low-side analog ground
VDD1
1
—
High-side power supply, 3.0 V to 5.5 V.
See the Power Supply Recommendations section for decoupling recommendations.
VDD2
8
—
Low-side power supply, 3.0 V to 5.5 V.
See the Power Supply Recommendations section for decoupling recommendations.
VINN
3
I
Inverting analog input
VINP
2
I
Noninverting analog input
VOUTN
6
O
Inverting analog output
VOUTP
7
O
Noninverting analog output
4
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SBAS667F – APRIL 2016 – REVISED APRIL 2020
7 Specifications
7.1 Absolute Maximum Ratings (1)
Supply voltage, VDD1 to GND1 or VDD2 to GND2
Analog input voltage at VINP, VINN
Input current to any pin except supply pins
MIN
MAX
UNIT
–0.3
7
V
GND1 – 6
VDD1 + 0.5
V
–10
10
mA
150
°C
150
°C
Junction temperature, TJ
Storage temperature, Tstg
(1)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating ambient temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VDD1
High-side supply voltage (VDD1 to GND1)
3.0
5.0
5.5
VDD2
Low-side supply voltage (VDD2 to GND2)
3.0
3.3
5.5
V
TA
Operating ambient temperature
V
AMC1301
–40
125
°C
AMC1301S
–55
125
°C
7.4 Thermal Information
AMC1301
THERMAL METRIC (1)
DWV (SOIC)
UNIT
8 PINS
RθJA
Junction-to-ambient thermal resistance
110.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
51.7
°C/W
RθJB
Junction-to-board thermal resistance
66.4
°C/W
ψJT
Junction-to-top characterization parameter
16.0
°C/W
ψJB
Junction-to-board characterization parameter
64.5
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Power Ratings
PARAMETER
TEST CONDITIONS
PD
Maximum power dissipation (both sides)
PD1
Maximum power dissipation (high-side supply)
PD2
Maximum power dissipation (low-side supply)
VDD1 = VDD2 = 5.5 V
VALUE
UNIT
81.4
mW
45.65
mW
35.75
mW
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SBAS667F – APRIL 2016 – REVISED APRIL 2020
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7.6 Insulation Specifications
over operating ambient temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VALUE
UNIT
Shortest pin-to-pin distance through air
≥ 8.5
mm
Shortest pin-to-pin distance across the package
surface
≥ 8.5
mm
≥ 0.027
mm
≥ 600
V
GENERAL
CLR
External clearance (1)
CPG
External creepage
(1)
DTI
Distance through insulation
Minimum internal gap (internal clearance) of the
double insulation (2 × 0.0135 mm)
CTI
Comparative tracking index
DIN EN 60112 (VDE 0303-11); IEC 60112
Material group
According to IEC 60664-1
Overvoltage category per IEC 60664-1
DIN VDE V 0884-11: 2017-01
Maximum repetitive peak isolation
voltage
VIOWM
Maximum-rated isolation working
voltage
VIOTM
Maximum transient isolation voltage
VIOSM
Maximum surge isolation voltage (3)
Apparent charge (4)
Barrier capacitance, input to output (5)
CIO
RIO
I-IV
Rated mains voltage ≤ 600 VRMS
I-III
Rated mains voltage ≤ 1000 VRMS
I-II
(2)
VIORM
qpd
I
Rated mains voltage ≤ 300 VRMS
Insulation resistance, input to output
(5)
At ac voltage (bipolar)
1500
VPK
At ac voltage (sine wave)
1000
VRMS
At dc voltage
1500
VDC
VTEST = VIOTM, t = 60 s (qualification test)
7000
VTEST = 1.2 × VIOTM, t = 1 s (100% production test)
8400
Test method per IEC 60065, 1.2/50-μs waveform,
VTEST = 1.6 × VIOSM = 10000 VPK (qualification)
6250
Method a, after input/output safety test subgroup 2 / 3,
Vini = VIOTM, tini = 60 s,
Vpd(m) = 1.2 × VIORM = 1800 VPK, tm = 10 s
≤5
Method a, after environmental tests subgroup 1,
Vini = VIOTM, tini = 60 s,
Vpd(m) = 1.6 × VIORM = 2400 VPK, tm = 10 s
≤5
Method b1, at routine test (100% production) and
preconditioning (type test), Vini = VIOTM, tini = 1 s,
Vpd(m) = 1.875 × VIORM = 2812.5 VPK, tm = 1 s
≤5
VIO = 0.5 VPP at 1 MHz
1.2
VIO = 500 V at TS = 150°C
Climatic category
VPK
pC
pF
9
> 10
Pollution degree
VPK
Ω
2
AMC1301
40/125/21
AMC1301S
55/125/21
UL1577
VISO
(1)
(2)
(3)
(4)
(5)
6
Withstand isolation voltage
VTEST = VISO = 5000 VRMS or 7000 VDC, t = 60 s
(qualification), VTEST = 1.2 × VISO = 6000 VRMS, t = 1 s
(100% production test)
5000
VRMS
Apply creepage and clearance requirements according to the specific equipment isolation standards of an application. Care must be
taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed
circuit board (PCB) do not reduce this distance. Creepage and clearance on a PCB become equal in certain cases. Techniques such as
inserting grooves and ribs on the PCB are used to help increase these specifications.
This coupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by
means of suitable protective circuits.
Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
Apparent charge is electrical discharge caused by a partial discharge (pd).
All pins on each side of the barrier are tied together, creating a two-pin device.
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7.7 Safety-Related Certifications
VDE
UL
Certified according to DIN VDE V 0884-11: 2017-01, DIN EN 623681: 2016-05, EN 62368-1: 2014, and IEC 62368-1: 2014
Recognized under 1577 component recognition and
CSA component acceptance NO 5 programs
Reinforced insulation
Single protection
Certificate number: 40040142
File number: E181974
7.8 Safety Limiting Values
Safety limiting intends to prevent potential damage to the isolation barrier upon failure of input or output circuitry.
PARAMETER
IS
Safety input, output, or supply
current
PS
Safety input, output, or total
power (1)
TS
Maximum safety temperature
(1)
TEST CONDITIONS
MIN
TYP
MAX
RθJA = 110.1°C/W, VI = 5.5 V, TJ = 150°C, TA = 25°C
206
RθJA = 110.1°C/W, VI = 3.6 V, TJ = 150°C, TA = 25°C
315
RθJA = 110.1°C/W, TJ = 150°C, TA = 25°C
UNIT
mA
1135
mW
150
°C
The maximum safety temperature, TS, has the same value as the maximum junction temperature, TJ, specified for the device. The IS
and PS parameters represent the safety current and safety power, respectively. Do not exceed the maximum limits of IS and PS. These
limits vary with the ambient temperature, TA.
The junction-to-air thermal resistance, RθJA, in the Thermal Information table is that of a device installed on a high-K test board for
leaded surface-mount packages. Use these equations to calculate the value for each parameter:
TJ = TA + RθJA × P, where P is the power dissipated in the device.
TJ(max) = TS = TA + RθJA × PS, where TJ(max) is the maximum junction temperature.
PS = IS × VDD1max + IS × VDD2max, where VDD1max is the maximum high-side voltage and VDD2max is the maximum low-side supply
voltage.
7.9 Electrical Characteristics
minimum and maximum specifications apply from TA = –40°C to +125°C (for AMC1301S: TA = –55°C to +125°C),
VDD1 = 3.0 V to 5.5 V, VDD2 = 3.0 V to 5.5 V, VINP = –250 mV to +250 mV, and VINN = 0 V (unless otherwise noted);
typical specifications are at TA = 25°C, VDD1 = 5 V, and VDD2 = 3.3 V
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ANALOG INPUT
VClipping
Differential input voltage before clipping
output
VINP – VINN
VFSR
Specified linear differential full-scale
VINP – VINN
–250
250
VCM
Specified common-mode input voltage
(VINP + VINN) / 2 to GND1
–0.16
VDD1 – 2.1
V
Absolute common-mode input voltage (1)
(VINN + VINP) / 2 to GND1
–2
VDD1
V
VCMov
Common-mode overvoltage detection
level
VOS
Input offset voltage
TCVOS
Input offset drift
CMRR
Common-mode rejection ratio
CIND
Differential input capacitance
RIN
Single-ended input resistance
RIND
Differential input resistance
IIB
Input bias current
TCIIB
Input bias current drift
BWIN
Input bandwidth
±302.7
mV
VDD1 – 2
Initial, at TA = 25°C, VINP = VINN = GND1
V
–200
±50
200
AMC1301
–3
±1
3
AMC1301S
–4
±1
4
fIN = 0 Hz, VCM min ≤ VCM ≤ VCM max
–93
fIN = 10 kHz, VCM min ≤ VCM ≤ VCM max
–93
VINN = GND1
VINP = VINN = GND1, IIB = (IIBP + IIBN ) / 2
–41
mV
µV
µV/°C
dB
1
pF
18
kΩ
22
kΩ
–30
–24
1
1000
µA
nA/°C
kHz
ANALOG OUTPUT
Nominal gain
(1)
8.2
Steady-state voltage supported by the device in case of a system failure. See specified common-mode input voltage VCM for normal
operation. Observe analog input voltage range as specified in Absolute Maximum Ratings.
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Electrical Characteristics (continued)
minimum and maximum specifications apply from TA = –40°C to +125°C (for AMC1301S: TA = –55°C to +125°C),
VDD1 = 3.0 V to 5.5 V, VDD2 = 3.0 V to 5.5 V, VINP = –250 mV to +250 mV, and VINN = 0 V (unless otherwise noted);
typical specifications are at TA = 25°C, VDD1 = 5 V, and VDD2 = 3.3 V
PARAMETER
EG
Gain error
TCEG
Gain error drift
TEST CONDITIONS
MIN
TYP
MAX
–0.3%
±0.05%
0.3%
AMC1301
–50
±15
50
AMC1301S
–60
±15
60
–0.03%
±0.01%
0.03%
Initial, at TA = 25°C
Nonlinearity
Nonlinearity drift
THD
SNR
1
ppm/°C
ppm/°C
Total harmonic distortion
fIN = 10 kHz
–87
dB
Output noise
VINP = VINN = GND1, fIN = 0 Hz,
BW = 100 kHz
220
μVRMS
Signal-to-noise ratio
fIN = 1 kHz, BW = 10 kHz
80
fIN = 10 kHz, BW = 100 kHz
Power-supply rejection ratio
84
dB
71
vs VDD1, at dc
PSRR
UNIT
–94
vs VDD1, 100-mV and 10-kHz ripple
–90
vs VDD2, at dc
dB
–100
vs VDD2, 100-mV and 10-kHz ripple
–94
tr
Rise time
See Figure 45
2.0
tf
Fall time
See Figure 45
2.0
VIN to VOUT signal delay (50% – 10%)
See Figure 46, unfiltered output
0.7
2.0
µs
VIN to VOUT signal delay (50% – 50%)
See Figure 46, unfiltered output
1.6
2.6
µs
2.5
3.0
VIN to VOUT signal delay (50% – 90%)
See Figure 46, unfiltered output
CMTI
Common-mode transient immunity
|GND1 – GND2| = 1 kV
VCMout
Common-mode output voltage
Output resistance
BW
Output bandwidth
VFAILSAFE Failsafe differential output voltage
µs
15
1.39
Output short-circuit current
ROUT
µs
1.44
1.49
±13
on VOUTP or VOUTN
VCM ≥ VCMov, or VDD1 missing
V
mA
< 0.2
190
µs
kV/µs
Ω
210
kHz
–2.563
–2.545
3.0 V ≤ VDD1 ≤ 3.6 V
5.0
6.9
4.5 V ≤ VDD1 ≤ 5.5 V
5.9
8.3
3.0 V ≤ VDD2 ≤ 3.6 V
4.4
5.6
4.5 V ≤ VDD2 ≤ 5.5 V
4.8
6.5
3.0 V ≤ VDD1 ≤ 3.6 V
16.5
24.84
4.5 V ≤ VDD1 ≤ 5.5 V
29.5
45.65
3.0 V ≤ VDD2 ≤ 3.6 V
14.52
20.16
4.5 V ≤ VDD2 ≤ 5.5 V
24
35.75
V
POWER SUPPLY
IDD1
High-side supply current
IDD2
Low-side supply current
PDD1
High-side power dissipation
PDD2
Low-side power dissipation
8
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mA
mA
mW
mW
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7.10
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Insulation Characteristics Curves
500
VDD1 = VDD2 = 3.6 V
VDD1 = VDD2 = 5.5 V
300
PS (mW)
IS (mA)
400
200
100
0
0
50
100
TA (°C)
150
200
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
0
50
100
TA (°C)
D043
Figure 1. Thermal Derating Curve for Safety-Limiting
Current per VDE
150
200
D044
Figure 2. Thermal Derating Curve for Safety-Limiting
Power per VDE
TA up to 150°C, stress voltage frequency = 60 Hz
Figure 3. Reinforced Isolation Capacitor Lifetime Projection
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7.11 Typical Characteristics
3.8
3.8
3.4
3.4
3
3
VCMov (V)
VCMov (V)
at VDD1 = 5 V, VDD2 = 3.3 V, VINP = –250 mV to 250 mV, VINN = 0 V, and fIN = 10 kHz (unless otherwise noted)
2.6
2.2
2.6
2.2
1.8
1.8
1.4
1.4
1
-55 -40 -25 -10
1
3
3.25
3.5
3.75
4
4.25 4.5
VDD1 (V)
4.75
5
5.25
5.5
5
20 35 50 65
Temperature (°C)
D001
80
95 110 125
D002
–55°C ≤ TA < 40°C valid for the AMC1301S only
Figure 5. Common-Mode Overvoltage Detection Level
vs Temperature
50
40
40
D003
VOS (PV)
200
175
150
125
75
50
0
25
-25
-50
100
D004
VOS (PV)
VDD1 = 3.3 V
VDD1 = 5 V
Figure 6. Input Offset Voltage Histogram
Figure 7. Input Offset Voltage Histogram
200
200
vs VDD1
vs VDD2
150
150
100
100
50
50
VOS (PV)
VOS (PV)
-75
-200
200
175
150
125
75
100
50
0
25
-25
-50
-75
-100
0
-125
0
-150
10
-175
10
-100
20
-125
20
30
-150
30
-175
Devices (%)
50
-200
Devices (%)
Figure 4. Common-Mode Overvoltage Detection Level
vs High-Side Supply Voltage
0
0
-50
-50
-100
-100
-150
-150
-200
3
3.25
3.5
3.75
4
4.25 4.5
VDDx (V)
4.75
5
5.25
5.5
Device 1
Device 2
Device 3
-200
-55 -40 -25 -10
D005
5
20 35 50 65
Temperature (°C)
80
95 110 125
D006
–55°C ≤ TA < 40°C valid for the AMC1301S only
Figure 8. Input Offset Voltage vs Supply Voltage
10
Figure 9. Input Offset Voltage vs Temperature
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Typical Characteristics (continued)
70
60
60
50
50
D007
TCVOS (PV/qC)
3
2.5
2
1.5
1
0
0.5
-1
-3
3
2.5
2
1.5
1
-2
0
0
0.5
0
-1
10
-0.5
10
-1.5
20
-2.5
20
-0.5
30
-1.5
30
40
-2
40
-2.5
Devices (%)
70
-3
Devices (%)
at VDD1 = 5 V, VDD2 = 3.3 V, VINP = –250 mV to 250 mV, VINN = 0 V, and fIN = 10 kHz (unless otherwise noted)
D008
TCVOS (PV/qC)
VDD1 = 3.3 V
VDD1 = 5 V
Figure 10. Input Offset Drift Histogram
Figure 11. Input Offset Drift Histogram
0
-60
-65
-20
-70
-75
CMRR (dB)
CMRR (dB)
-40
-60
-80
-80
-85
-90
-95
-100
-100
-105
-120
0.001
0.01
0.1
0.5
2 3 5 10 20
fIN (kHz)
100
-110
-55 -40 -25 -10
1000
5
D009
20 35 50 65
Temperature (°C)
80
95 110 125
D011
–55°C ≤ TA < 40°C valid for the AMC1301S only
Figure 12. Common-Mode Rejection Ratio
vs Input Frequency
Figure 13. Common-Mode Rejection Ratio
vs Temperature
60
-23
-25
40
-27
-29
0
IIB (PA)
IIB (PA)
20
-20
-31
-33
-35
-40
-37
-60
-80
-0.5
-39
-41
0
0.5
1
1.5
VCM (V)
2
2.5
3
3
3.25
D012
Figure 14. Input Bias Current
vs Common-Mode Input Voltage
3.5
3.75
4
4.25 4.5
VDD1 (V)
4.75
5
5.25
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Figure 15. Input Bias Current
vs High-Side Supply Voltage
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Typical Characteristics (continued)
at VDD1 = 5 V, VDD2 = 3.3 V, VINP = –250 mV to 250 mV, VINN = 0 V, and fIN = 10 kHz (unless otherwise noted)
-23
0
-25
-10
Normalized Gain (dB)
-27
IIB (PA)
-29
-31
-33
-35
-37
-20
-30
-40
-50
-60
-70
-39
-41
-55 -40 -25 -10
5
20 35 50 65
Temperature (°C)
80
-80
0.01
95 110 125
0.1
D014
1
10
100
Input Signal Frequency (kHz)
1000
D015
–55°C ≤ TA < 40°C valid for the AMC1301S only
Figure 17. Normalized Gain vs Input Frequency
40
40
EG (%)
0.3
0.25
0.2
0.15
0.1
0
EG (%)
D017
VDD1 = 5 V
Figure 18. Gain Error Histogram
Figure 19. Gain Error Histogram
0.3
0.3
vs VDD1
vs VDD2
0.25
0.2
Device 1
Device 2
Device 3
0.25
0.2
0.15
0.15
0.1
0.1
0.05
0.05
EG (%)
EG (%)
0.05
D016
VDD1 = 3.3 V
-0.1
-0.3
0.3
0.25
0.2
0.15
0.1
0
0.05
-0.1
-0.05
0
-0.15
0
-0.2
10
-0.25
10
-0.05
20
-0.15
20
30
-0.2
30
-0.25
Devices (%)
50
50
-0.3
Devices (%)
Figure 16. Input Bias Current vs Temperature
0
-0.05
0
-0.05
-0.1
-0.1
-0.15
-0.15
-0.2
-0.2
-0.25
-0.25
-0.3
3
3.25
3.5
3.75
4
4.25 4.5
VDDx (V)
4.75
5
5.25
5.5
-0.3
-55 -40 -25 -10
D018
5
20 35 50 65
Temperature (°C)
80
95 110 125
D019
–55°C ≤ TA < 40°C valid for the AMC1301S only
Figure 20. Gain Error vs Supply Voltage
12
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Figure 21. Gain Error vs Temperature
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Typical Characteristics (continued)
90
80
80
70
70
60
60
Devices (%)
90
50
40
50
40
30
20
20
10
10
0
0
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
35
40
45
50
30
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
35
40
45
50
Devices (%)
at VDD1 = 5 V, VDD2 = 3.3 V, VINP = –250 mV to 250 mV, VINN = 0 V, and fIN = 10 kHz (unless otherwise noted)
D020
TCEG (ppm/qC)
VDD1 = 5 V
Figure 22. Gain Error Drift Histogram
Figure 23. Gain Error Drift Histogram
5
0.03
VOUTN
VOUTP
4.5
0.025
0.02
4
0.015
Nonlinearity (%)
VOUT (V)
3.5
3
2.5
2
1.5
0.01
0.005
0
-0.005
-0.01
-0.015
1
-0.02
0.5
-0.025
0
-350
-250
-150
-50
50
150
Differential Input Voltage (mV)
250
-0.03
-250 -200 -150 -100 -50
0
50 100 150
Differential Input Voltage (mV)
350
D022
Figure 24. Output Voltage vs Input Voltage
200
250
D024
Figure 25. Nonlinearity vs Input Voltage
0.03
0.03
vs VDD1
vs VDD2
0.025
0.02
0.025
0.02
0.015
0.015
0.01
Nonlinearity (%)
Nonlinearity (%)
D021
TCEG (ppm/qC)
VDD1 = 3.3 V
0.005
0
-0.005
-0.01
-0.015
0.01
0.005
0
-0.005
-0.01
-0.015
-0.02
-0.02
-0.025
-0.025
-0.03
3
3.25
3.5
3.75
4
4.25 4.5
VDDx (V)
4.75
5
5.25
5.5
Device 1
Device 2
Device 3
-0.03
-55 -40 -25 -10
D025
5
20 35 50 65
Temperature (°C)
80
95 110 125
D026
–55°C ≤ TA < 40°C valid for the AMC1301S only
Figure 26. Nonlinearity vs Supply Voltage
Figure 27. Nonlinearity vs Temperature
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Typical Characteristics (continued)
at VDD1 = 5 V, VDD2 = 3.3 V, VINP = –250 mV to 250 mV, VINN = 0 V, and fIN = 10 kHz (unless otherwise noted)
-60
-60
vs VDD1
vs VDD2
-65
-70
-70
-75
-75
-80
-80
THD (dB)
THD (dB)
-65
-85
-90
-85
-90
-95
-95
-100
-100
-105
-105
-110
-55 -40 -25 -10
-110
3
3.25
3.5
3.75
4
4.25 4.5
VDDx (V)
4.75
5
5.25
Device 1
Device 2
Device 3
5.5
5
D027
20 35 50 65
Temperature (°C)
80
95 110 125
D028
–55°C ≤ TA < 40°C valid for the AMC1301S only
Figure 29. Total Harmonic Distortion vs Temperature
80
80
75
77.5
70
75
65
72.5
SNR (dB)
SNR (dB)
Figure 28. Total Harmonic Distortion vs Supply Voltage
60
55
70
67.5
50
65
45
62.5
60
40
0
50
100
150
200
|VINP - VINN| (mV)
250
3
300
3.25
3.5
D029
Figure 30. Signal-to-Noise Ratio vs Input Voltage
3.75
4
4.25 4.5
VDDx (V)
4.75
5
5.25
5.5
D030
Figure 31. Signal-to-Noise Ratio vs Supply Voltage
10000
Input Referred Noise Density (nV/—Hz)
80
77.5
75
SNR (dB)
vs VDD1
vs VDD2
72.5
70
67.5
65
Device 1
Device 2
Device 3
62.5
60
-55 -40 -25 -10
5
20 35 50 65
Temperature (°C)
80
95 110 125
1000
100
10
0.01
D031
0.1
1
10
Frequency (kHz)
100
1000
D032
–55°C ≤ TA < 40°C valid for the AMC1301S only
Figure 32. Signal-to-Noise Ratio vs Temperature
14
Figure 33. Input-Referred Noise Density vs Frequency
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Typical Characteristics (continued)
0
0
-20
-20
-40
-40
PSRR (dB)
PSRR (dB)
at VDD1 = 5 V, VDD2 = 3.3 V, VINP = –250 mV to 250 mV, VINN = 0 V, and fIN = 10 kHz (unless otherwise noted)
-60
-60
-80
-80
-100
-100
-120
0.001
0.01
0.1
1
10
Ripple Frequency (kHz)
100
-120
0.001
1000
0.01
D033
0.1
1
10
Ripple Frequency (kHz)
vs VDD1
1000
D042
vs VDD2
Figure 34. Power-Supply Rejection Ratio
vs Ripple Frequency
Figure 35. Power-Supply Rejection Ratio
vs Ripple Frequency
4
3.8
3.5
3.4
50% - 10%
50% - 50%
50% - 90%
3
Signal Delay (Ps)
3
Rise/Fall Time (Ps)
100
2.5
2
1.5
1
2.6
2.2
1.8
1.4
1
0.5
0.6
0
-55 -40 -25 -10
0.2
5
20 35 50 65
Temperature (°C)
80
95 110 125
3
3.25
3.5
3.75
4
D034
4.25 4.5
VDD2 (V)
4.75
5
5.25
5.5
D035
–55°C ≤ TA < 40°C valid for the AMC1301S only
Figure 36. Output Rise and Fall Time vs Temperature
Figure 37. VIN to VOUT Signal Delay
vs Low-Side Supply Voltage
3.8
1.49
Signal Delay (Ps)
3
Output Common-Mode Voltage (V)
50% - 10%
50% - 50%
50% - 90%
3.4
2.6
2.2
1.8
1.4
1
0.6
0.2
-55 -40 -25 -10
1.48
1.47
1.46
1.45
1.44
1.43
1.42
1.41
1.4
1.39
5
20 35 50 65
Temperature (°C)
80
95 110 125
3
3.25
D036
3.5
3.75
4
4.25 4.5
VDD2 (V)
4.75
5
5.25
5.5
D010
–55°C ≤ TA < 40°C valid for the AMC1301S only
Figure 38. VIN to VOUT Signal Delay vs Temperature
Figure 39. Output Common-Mode Voltage
vs Low-Side Supply Voltage
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Typical Characteristics (continued)
at VDD1 = 5 V, VDD2 = 3.3 V, VINP = –250 mV to 250 mV, VINN = 0 V, and fIN = 10 kHz (unless otherwise noted)
240
1.49
1.48
1.47
220
1.45
BW (kHz)
VCMout (V)
1.46
1.44
1.43
1.42
200
180
1.41
1.4
1.39
-55 -40 -25 -10
160
5
20 35 50 65
Temperature (°C)
80
95 110 125
3
3.25
3.5
3.75
4
D037
4.25 4.5
VDD2 (V)
4.75
5
5.25
5.5
D038
–55°C ≤ TA < 40°C valid for the AMC1301S only
Figure 40. Output Common-Mode Voltage vs Temperature
Figure 41. Output Bandwidth vs Low-Side Supply Voltage
190
8.5
IDD1 vs VDD1
IDD2 vs VDD2
8
200
7.5
7
IDDx (mA)
BW (kHz)
210
220
230
6.5
6
5.5
5
4.5
240
4
250
-55 -40 -25 -10
3.5
5
20 35 50 65
Temperature (°C)
80
95 110 125
3
3.25
3.5
3.75
D039
4
4.25 4.5
VDDx (V)
4.75
5
5.25
5.5
D040
–55°C ≤ TA < 40°C valid for the AMC1301S only
Figure 42. Output Bandwidth vs Temperature
Figure 43. Supply Current vs Supply Voltage
8.5
IDD1
IDD2
8
7.5
IDDx (mA)
7
6.5
6
5.5
5
4.5
4
3.5
-55 -40 -25 -10
5
20 35 50 65
Temperature (°C)
80
95 110 125
D041
–55°C ≤ TA < 40°C valid for the AMC1301S only
Figure 44. Supply Current vs Temperature
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8 Parameter Measurement Information
8.1 Timing Diagrams
0.25 V
VINP - VINN
-0.25 V
VOUTN
90%
10%
VOUTP
tr
tf
Figure 45. Rise and Fall Time Test Waveforms
0.25 V
VINP - VINN
50%
-0.25 V
50% - 50%
50% - 90%
50% - 10%
VOUTN
90%
50%
10%
VOUTP
Figure 46. Delay Time Test Waveforms
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9 Detailed Description
9.1 Overview
The AMC1301 is a fully-differential, precision, isolated amplifier. The input stage of the device consists of a fullydifferential amplifier that drives a second-order, delta-sigma (ΔΣ) modulator. The modulator uses the internal
voltage reference and clock generator to convert the analog input signal to a digital bitstream. The drivers (called
TX in the Functional Block Diagram) transfer the output of the modulator across the isolation barrier that
separates the high-side and low-side voltage domains. The received bitstream and clock are synchronized and
processed by a fourth-order analog filter on the low-side and presented as a differential output of the device, as
shown in the Functional Block Diagram.
The SiO2-based, double-capacitive isolation barrier supports a high level of magnetic field immunity, as described
in ISO72x Digital Isolator Magnetic-Field Immunity. The digital modulation used in the AMC1301 and the isolation
barrier characteristics result in high reliability and common-mode transient immunity.
9.2 Functional Block Diagram
VDD2
VDD1
Reinforced
Isolation
Barrier
AMC1301
VDD1
Detection
Bandgap
Reference
Bandgap
Reference
VINP
VOUTP
û -Modulator
Data
TX
RX
Retiming and
4th order
active
low-pass filter
VOUTN
VINN
VCM
Diagnostic
CLK
RX
GND1
TX
Oscillator
GND2
9.3 Feature Description
9.3.1 Analog Input
The AMC1301 incorporates front-end circuitry that contains a fully-differential amplifier followed by a ΔΣ
modulator sampling stage. The gain of the differential amplifier is set by internal precision resistors to a factor of
4 with a differential input impedance of 22 kΩ. Consider the input impedance of the AMC1301 in designs with
high-impedance signal sources that may cause degradation of gain and offset specifications. The importance of
this effect, however, depends on the desired system performance.
Additionally, the input bias current caused by the internal common-mode voltage at the output of the differential
amplifier causes an offset that is dependent on the actual amplitude of the input signal. See the Isolated Voltage
Sensing section for more details on reducing this effect.
There are two restrictions on the analog input signals (VINP and VINN). First, if the input voltage exceeds the
range GND1 – 6 V to VDD1 + 0.5 V, then the input current must be limited to 10 mA because the device input
electrostatic discharge (ESD) protection turns on. In addition, the linearity and noise performance of the device
are ensured only when the analog input voltage remains within the specified linear full-scale range (FSR) and
within the specified common-mode input voltage range.
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Feature Description (continued)
9.3.2 Fail-Safe Output
The AMC1301 offers a fail-safe output that simplifies diagnostics on system level. The fail-safe output is active in
two cases:
• When the high-side supply VDD1 of the AMC1301 is missing, or
• When the common-mode input voltage, that is VCM = (VINP + VINN) / 2, exceeds the minimum commonmode over-voltage detection level VCMov of VDD1 – 2 V.
The fail-safe output of the AMC1301 is a negative differential output voltage value that differs from the negative
clipping output voltage, as shown in Figure 47 and Figure 48. As a reference value for the fail-safe detection on a
system level, use the VFAILSAFE maximum value of –2.545 V.
Figure 47. Typical Negative Clipping Output of the
AMC1301
Figure 48. Typical Failsafe Output of the AMC1301
9.4 Device Functional Modes
The AMC1301 is operational when the power supplies VDD1 and VDD2 are applied, as specified in
Recommended Operating Conditions.
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10 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
The AMC1301 offers unique linearity, high input common-mode and power-supply rejection, low ac and dc
errors, and low temperature drift. These features make the AMC1301 a robust, high-performance, isolated
amplifier for industrial applications where high voltage isolation is required.
10.2 Typical Applications
10.2.1 Frequency Inverter Application
Isolated amplifiers are widely used in frequency inverters that are critical parts of industrial motor drives,
photovoltaic inverters, uninterruptible power supplies, electrical and hybrid electrical vehicles, and other industrial
applications. The input structure of the AMC1301 is optimized for use with low-value shunt resistors and is
therefore tailored for isolated current sensing using shunts.
Figure 49 shows a typical operation of the AMC1301 for current sensing in a frequency inverter application.
Phase current measurement is done through the shunt resistor, RSHUNT (in this case, a two-pin shunt). The
differential input and the high common-mode transient immunity of the AMC1301 ensure reliable and accurate
operation even in high-noise environments (such as the power stage of the motor drive).
Additionally, the AMC1301 may also be used for isolated voltage measurement of the dc-link, as described in the
Isolated Voltage Sensing section.
AMC1301
R1
Gate Driver
5.1 V
D1
C1
10 F
GND1
RSHUNT
VINN
To Load
VDD2
VDD1
C2
0.1 F
VINP
Reinforced Isolation
HV+
Floating
Power Supply
15 V
3.3 V
C4
0.1 F
C5
2.2 F
GND2
VOUTP
TMS320
C/F28x
R2
C3
ADC
VOUTN
R3
Gate Driver
HV-
Figure 49. Using the AMC1301 for Current Sensing in Frequency Inverters
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Typical Applications (continued)
10.2.1.1 Design Requirements
Table 1 lists the parameters for the typical application in Figure 49.
Table 1. Design Requirements
PARAMETER
VALUE
High-side supply voltage
3.3 V or 5 V
Low-side supply voltage
3.3 V or 5 V
Voltage drop across the shunt for a linear response
± 250 mV (maximum)
10.2.1.2 Detailed Design Procedure
The high-side power supply (VDD1) for the AMC1301 is derived from the power supply of the upper gate driver.
Further details are provided in the Power Supply Recommendations section.
The floating ground reference (GND1) is derived from one of the ends of the shunt resistor that is connected to
the negative input of the AMC1301 (VINN). If a four-pin shunt is used, the inputs of the AMC1301 are connected
to the inner leads and GND1 is connected to one of the outer shunt leads.
Use Ohm's Law to calculate the voltage drop across the shunt resistor (VSHUNT) for the desired measured
current: VSHUNT = I × RSHUNT.
Consider the following two restrictions to choose the proper value of the shunt resistor RSHUNT:
• The voltage drop caused by the nominal current range must not exceed the recommended differential input
voltage range: VSHUNT ≤ ± 250 mV
• The voltage drop caused by the maximum allowed overcurrent must not exceed the input voltage that causes
a clipping output: VSHUNT ≤ VClipping
For best performance, use an RC filter (components R2, R3, and C3 in Figure 49) to minimize the noise of the
differential output signal. Tailor the bandwidth of this RC filter to the bandwidth requirement of the system. TI
recommends an NP0-type capacitor to be used for C3.
For more information on the general procedure to design the filtering and driving stages of SAR ADCs, consult
the TI Precision Designs 18-Bit, 1MSPS Data Acquisition Block (DAQ) Optimized for Lowest Distortion and Noise
and 18-Bit Data Acquisition Block (DAQ) Optimized for Lowest Power, available for download at www.ti.com.
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10.2.1.3 Application Curves
In frequency inverter applications, the power switches must be protected in case of an overcurrent condition. To
allow for fast powering off of the system, a low delay caused by the isolated amplifier is required. Figure 50
shows the typical full-scale step response of the AMC1301. Consider the delay of the required window
comparator and the MCU to calculate the overall response time of the system.
VIN
VOUTP
VOUTN
Figure 50. Step Response of the AMC1301
The high linearity and low temperature drift of offset and gain errors of the AMC1301, as shown in Figure 51,
allows design of motor drives with low torque ripple.
0.03
0.025
0.02
Nonlinearity (%)
0.015
0.01
0.005
0
-0.005
-0.01
-0.015
-0.02
-0.025
-0.03
-250 -200 -150 -100 -50
0
50 100 150
Differential Input Voltage (mV)
200
250
D024
Figure 51. Typical Nonlinearity of the AMC1301
22
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10.2.2 Isolated Voltage Sensing
The AMC1301 is optimized for usage in current-sensing applications using low-impedance shunts. However, the
device may also be used in isolated voltage-sensing applications if the effect of the (usually higher) impedance of
the resistor divider used in this case is considered.
High Voltage
Potential
3.3 V
or 5 V
R1
AMC1301 Front-End
VDD1
R2
R4
VINP
IIB
R5
+
RIN
R3
û -Modulator
±
VINN
R3'
R4'
R5'
GND1
VCM = 2 V
Figure 52. Using the AMC1301 for Isolated Voltage Sensing
10.2.2.1 Design Requirements
Figure 52 shows a simplified circuit typically used in high-voltage sensing applications. The high-impedance
resistors (R1 and R2) dominate the current value that flows through the resistive divider. The resistance of the
sensing resistor R3 is chosen to meet the input voltage range of the AMC1301. This resistor and the input
impedance of the device (RIN = 18 kΩ) also create a voltage divider that results in an additional gain error. With
the assumption of R1 and R2 having a considerably higher value than R3 and omitting R3' for the moment, the
resulting total gain error is estimated using Equation 1, with EG being the initial gain error of the AMC1301.
R3
EGtot
EG
RIN
(1)
This gain error may be easily minimized during the initial system-level gain calibration procedure.
10.2.2.2 Detailed Design Procedure
As indicated in Figure 52, the output of the integrated differential amplifier is internally biased to a common-mode
voltage of 2 V. This voltage results in a bias current IIB through the resistive network R4 and R5 (or R4' and R5')
used for setting the gain of the amplifier. The value of this current is specified in the Pin Configuration and
Functions section. This bias current generates additional offset and gain errors that depend on the value of the
resistor R3. Because the value of this bias current depends on the actual common-mode amplitude of the input
signal (as shown in Figure 53), the initial system offset calibration eliminates the offset but not the gain error
component. Therefore, in systems with high accuracy requirements, a series resistor is recommended to be used
at the negative input (VINN) of the AMC1301 with a value equal to the shunt resistor R3 (that is, R3' = R3 in
Figure 52) to eliminate the effect of the bias current.
This additional series resistor (R3') influences the gain error of the circuit. The effect is calculated using
Equation 2 with R4 = R4' = 12.5 kΩ. The effect of the internal resistors R5 = R5' cancels in this calculation.
R4 ·
§
EG (%) ¨1
¸ * 100 %
R
4
' R 3' ¹
©
(2)
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10.2.2.3 Application Curve
Figure 53 shows the dependency of the input bias current on the common-mode voltage at the input of the
AMC1301.
60
40
IIB (PA)
20
0
-20
-40
-60
-80
-0.5
0
0.5
1
1.5
VCM (V)
2
2.5
3
D012
Figure 53. Input Current vs Input Common-Mode Voltage
10.3 What To Do and What Not TO Do
Do not leave the inputs of the AMC1301 unconnected (floating) when the device is powered up. If both device
inputs are left floating, the input bias current drives them to the output common-mode of the analog front-end of
approximately 2 V. If the high-side supply voltage VDD1 is below 4 V, the internal common-mode overvoltage
detector turns on and the output functions as described in the Fail-Safe Output section, which may lead to an
undesired reaction on the system level.
24
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11 Power Supply Recommendations
In a typical frequency inverter application, the high-side power supply (VDD1) for the device is derived from the
floating power supply of the upper gate driver. For lowest cost, a Zener diode may be used to limit the voltage to
5 V (or 3.3 V, depending on the design) ± 10%. Alternatively a low-cost, low-dropout (LDO) regulator (for
example, the LM317-N) may be used to minimize noise on the power supply. TI recommends a low-ESR
decoupling capacitor of 0.1 µF to filter this power-supply path. Place this capacitor (C2 in Figure 54) as close as
possible to the VDD1 pin of the AMC1301 for best performance. If better filtering is required, an additional 10-µF
capacitor may be used. The floating ground reference (GND1) is derived from the end of the shunt resistor,
which is connected to the negative input (VINN) of the device. If a four-pin shunt is used, the device inputs are
connected to the inner leads, and GND1 is connected to one of the outer leads of the shunt.
To decouple the digital power supply on the controller side, use a 0.1-µF capacitor placed as close to the VDD2
pin of the AMC1301 as possible, followed by an additional capacitor from 1 µF to 10 µF.
R1
800
Gate Driver
Z1
1N751A
C1
10 F
AMC1301
5.1 V
C2
0.1 F
GND1
RSHUNT
VINN
To Load
VDD2
VDD1
VINP
Reinforced Isolation
HV+
Floating
Power Supply
20 V
C4
0.1 F
C5
2.2 F
3.3 V or
5.0 V
GND2
VOUTP
VOUTN
ADS7263
14-Bit ADC
Gate Driver
HV-
Figure 54. Zener-Diode-Based, High-Side Power Supply
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12 Layout
12.1 Layout Guidelines
A layout recommendation showing the critical placement of the decoupling capacitors (as close as possible to the
AMC1301) and placement of the other components required by the device is shown in Figure 55. For best
performance, place the shunt resistor close to the VINP and VINN inputs of the AMC1301 and keep the layout of
both connections symmetrical.
12.2 Layout Example
Clearance area,
to be kept free of any
conductive materials.
Shunt Resistor
To Floating
Power
Supply
0.1 µF
0.1 µF
2.2 µF
SMD
0603
SMD
0603
SMD
0603
VDD1
VDD2
VINP
VOUTP
To Filter
or ADC
AMC1301
VINN
VOUTN
GND1
GND2
LEGEND
Copper Pour and Traces
High-Side Area
Low-Side Area
Via to Ground Plane
Via to Supply Plane
Figure 55. Recommended Layout of the AMC1301
26
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13 Device and Documentation Support
13.1 Device Support
13.1.1 Device Nomenclature
Texas Instruments, Isolation Glossary
13.2 Documentation Support
13.2.1 Related Documentation
For related documentation, see the following:
• Texas Instruments, Dual, 1MSPS, 16-/14-/12-Bit, 4×2 or 2×2 Channel, Simultaneous Sampling Analog-toDigital Converter data sheet
• Texas Instruments, LM117, LM317-N Wide Temperature Three-Pin Adjustable Regulator data sheet
• Texas Instruments, ISO72x Digital Isolator Magnetic-Field Immunity application report
• Texas Instruments, 18-Bit, 1-MSPS Data Acquisition Block (DAQ) Optimized for Lowest Distortion and Noise
reference guide
• Texas Instruments, 18-Bit, 1-MSPS Data Acquisition Block (DAQ) Optimized for Lowest Power reference
guide
13.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
13.4 Community Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
13.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
13.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
13.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
6-Feb-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
AMC1301DWV
ACTIVE
SOIC
DWV
8
64
Green (RoHS
& no Sb/Br)
NIPDAU
Level-3-260C-168 HR
-40 to 125
AMC1301
AMC1301DWVR
ACTIVE
SOIC
DWV
8
1000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-3-260C-168 HR
-40 to 125
AMC1301
AMC1301SDWV
ACTIVE
SOIC
DWV
8
64
Green (RoHS
& no Sb/Br)
NIPDAU
Level-3-260C-168 HR
-55 to 125
AMC1301S
AMC1301SDWVR
ACTIVE
SOIC
DWV
8
1000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-3-260C-168 HR
-55 to 125
AMC1301S
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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