AMC23C14DWV

AMC23C14 SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 AMC23C14 Dual, Fast Response, Reinforced Isolated Window Comparator With Adjustable Threshold 1 Features 3 Description • • • The AMC23C14 is a dual, isolated window comparator with a short response time. The opendrain outputs are separated from the input circuitry by an isolation barrier that is highly resistant to magnetic interference. This barrier is certified to provide reinforced galvanic isolation of up to 5 kVRMS according to VDE 0884-17 and UL1577, and supports a working voltage of up to 1 kVPK. • • • • • • • 2 Applications Overcurrent or overvoltage detection in: – Motor drives – Frequency inverters – Solar inverters – DC/DC converters The AMC23C14 also supports a positive-comparator only mode. When the voltage on the REF pin is greater than 550 mV, the negative comparators are disabled and only the positive comparators are functional. The reference voltage in this mode can be as high as 2.7 V. This mode is particularly useful for monitoring positive voltage supplies. The AMC23C14 is available in an 8-pin, wide-body SOIC package and is specified over the extended industrial temperature range of –40°C to +125°C. Package Information(1) PART NUMBER AMC23C14 (1) PACKAGE SOIC (8) For all available packages, see the orderable addendum at the end of the data sheet. Low-side supply (2.7..5.5 V) AMC23C14 VDD1 I LDO 300 mV VDD2 + OUT2 IN – 100
A REF GND1 BODY SIZE (NOM) 5.85 mm × 7.50 mm High-side supply (3..27 V) RSHUNT • Both comparators have windows that are centered around 0 V, meaning that the comparators trip if the input exceeds the thresholds in a positive or negative direction. One comparator has fixed thresholds of ±300 mV. The second comparator has adjustable thresholds from ±20 mV to ±300 mV through a single external resistor. + Reinforced Isolation • Wide high-side supply range: 3 V to 27 V Low-side supply range: 2.7 V to 5.5 V Dual window comparator: – Window comparator 1: ±20-mV to ±300-mV adjustable threshold – Window comparator 2: ±300-mV fixed threshold Supports positive-comparator mode: – Cmp0: 600-mV to 2.7-V adjustable threshold – Cmp2: 300-mV fixed threshold – Cmp1 and Cmp3: Disabled Reference for threshold adjustment: 100 μA, ±2% Trip threshold error: ±1% (max) at 250 mV Open-drain outputs Propagation delay: 280 ns (typ) High CMTI: 15 V/ns (min) Safety-related certifications: – 7000-VPK reinforced isolation per DIN EN IEC 60747-17 (VDE 0884-17) – 5000-VRMS isolation for 1 minute per UL1577 Fully specified over the extended industrial temperature range: –40°C to +125°C – OUT1 to MCU to MCU GND2 Typical Application An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Pin Configuration and Functions...................................3 6 Specifications.................................................................. 4 6.1 Absolute Maximum Ratings........................................ 4 6.2 ESD Ratings............................................................... 4 6.3 Recommended Operating Conditions.........................5 6.4 Thermal Information ...................................................5 6.5 Power Ratings.............................................................5 6.6 Insulation Specifications ............................................ 6 6.7 Safety-Related Certifications ..................................... 7 6.8 Safety Limiting Values ................................................7 6.9 Electrical Characteristics ............................................8 6.10 Switching Characteristics .......................................10 6.11 Timing Diagrams..................................................... 10 6.12 Insulation Characteristics Curves............................11 6.13 Typical Characteristics............................................ 12 7 Detailed Description......................................................22 7.1 Overview................................................................... 22 7.2 Functional Block Diagram......................................... 22 7.3 Feature Description...................................................23 7.4 Device Functional Modes..........................................29 8 Application and Implementation.................................. 30 8.1 Application Information............................................. 30 8.2 Typical Applications ................................................. 30 8.3 Best Design Practices...............................................35 8.4 Power Supply Recommendations.............................36 8.5 Layout....................................................................... 36 9 Device and Documentation Support............................37 9.1 Documentation Support............................................ 37 9.2 Receiving Notification of Documentation Updates....37 9.3 Support Resources................................................... 37 9.4 Trademarks............................................................... 37 9.5 Electrostatic Discharge Caution................................37 9.6 Glossary....................................................................37 10 Mechanical, Packaging, and Orderable Information.................................................................... 37 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision * (February 2022) to Revision A (July 2022) Page • Changed document status from advance information to production data ......................................................... 1 2 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 5 Pin Configuration and Functions VDD1 1 8 VDD2 IN 2 7 OUT2 REF 3 6 OUT1 GND1 4 5 GND2 Not to scale Figure 5-1. DWV Package, 8-Pin SOIC (Top View) Table 5-1. Pin Functions PIN TYPE DESCRIPTION NO. NAME 1 VDD1 High-side power 2 IN Analog input Common analog input pin for window comparator 1 and 2. Reference pin that defines the trip threshold for window comparator 1. The voltage on this pin also affects the hysteresis of comparator Cmp0 as explained in the Reference Input section. This pin is internally connected to a 100-μA current source. Connect a resistor from REF to GND1 to define the trip threshold, and a capacitor from REF to GND1 to filter the reference voltage. For best transient noise immunity, place the capacitor as closely to the pin as possible. This pin can also be driven by an external voltage source. (1) High-side power supply.(1) 3 REF Analog input 4 GND1 High-side ground High-side ground. 5 GND2 Low-side ground Low-side ground. 6 OUT1 Digital output Open-drain output of window comparator 1. Connect to an external pullup resistor or leave unconnected (floating) when not used. 7 OUT2 Digital output Open-drain output of window comparator 2. Connect to an external pullup resistor or leave unconnected (floating) when not used. 8 VDD2 Low-side power Low-side power supply.(1) See the Layout section for power-supply decoupling recommendations. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 3 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6 Specifications 6.1 Absolute Maximum Ratings see(1) MIN Power-supply voltage Analog input voltage MAX VDD1 to GND1 –0.3 30 VDD2 to GND2 –0.3 6.5 REF to GND1 –0.5 6.5 –6 5.5 IN to GND1 Digital output voltage OUT1, OUT2 to GND2 –0.5 VDD2 + 0.5 Input current Continuous, any pin except power-supply pins –10 10 Temperature (1) Junction, TJ 150 Storage, Tstg –65 150 UNIT V V V mA °C Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime. 6.2 ESD Ratings VALUE V(ESD) (1) (2) 4 Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002(2) ±1000 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6.3 Recommended Operating Conditions over operating ambient temperature range (unless otherwise noted) MIN NOM MAX UNIT POWER SUPPLY VVDD1 High-side power-supply voltage VDD1 to GND1 3.0 5 27 V VVDD2 Low-side power supply voltage VDD2 to GND2 2.7 3.3 5.5 V ANALOG INPUT VIN Input voltage Reference voltage, window comparator mode VREF IN to GND1, VDD1 ≤ 4.3 V –0.4 VDD1 – 0.3 IN to GND1, VDD1 > 4.3 V –0.4 4 REF to GND1 20 300 Low hysteresis mode 20 450 Reference voltage, positive-comparator mode High hysteresis mode (Cmp0 only) 600 2700(1) Reference voltage headroom VDD1 – VREF 1.4 Filter capacitance on REF pin V mV V 20 100 nF DIGITAL OUTPUTS Digital output voltage OUT1, OUT2 to GND2 Sink current OUT1, OUT2 GND2 VDD2 0 4 mA V 125 °C TEMPERATURE RANGE TA (1) Specified ambient temperature –40 25 Reference voltages (VREF) >1.6 V require VVDD1 > VVDD1,MIN to maintain minimum headroom (VVDD1 – VREF) of 1.4 V. 6.4 Thermal Information DWV (SOIC) THERMAL METRIC(1) 8 PINS UNIT RθJA Junction-to-ambient thermal resistance 102.8 °C/W RθJC(top) Junction-to-case (top) thermal resistance 45.1 °C/W RθJB Junction-to-board thermal resistance 63.0 °C/W ΨJT Junction-to-top characterization parameter 14.3 °C/W ΨJB Junction-to-board characterization parameter 61.1 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.5 Power Ratings PARAMETER PD PD1 PD2 Maximum power dissipation (both sides) Maximum power dissipation (high-side) Maximum power dissipation (low-side) TEST CONDITIONS VALUE VDD1 = 25 V, VDD2 = 5.5 V 110 VDD1 = VDD2 = 5.5 V 34 VDD1 = VDD2 = 3.6 V 22 VDD1 = 25 V 98 VDD1 = 5.5 V 21 VDD1 = 3.6 V 14 VDD2 = 5.5 V 12 VDD2 = 3.6 V 8 UNIT mW mW mW Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 5 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6.6 Insulation Specifications over operating ambient temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS VALUE UNIT GENERAL CLR External clearance(1) Shortest pin-to-pin distance through air ≥ 8.5 mm CPG External creepage(1) Shortest pin-to-pin distance across the package surface ≥ 8.5 mm DTI Distance through insulation Minimum internal gap (internal clearance) of the double insulation ≥ 15.4 µm CTI Comparative tracking index DIN EN 60112 (VDE 0303-11); IEC 60112 ≥ 600 V Material group According to IEC 60664-1 Overvoltage category per IEC 60664-1 Rated mains voltage ≤ 600 VRMS I-III Rated mains voltage ≤ 1000 VRMS I-II DIN EN IEC 60747-17 (VDE I 0884-17)(2) VIORM Maximum repetitive peak isolation voltage VIOWM At AC voltage 1060 VPK Maximum-rated isolation working voltage At AC voltage (sine wave) 750 VRMS At DC voltage 1060 VDC VIOTM Maximum transient isolation voltage VTEST = VIOTM, t = 60 s (qualification test) 7070 VTEST = 1.2 × VIOTM, t = 1 s (100% production test) 8500 VIMP Maximum impulse voltage(3) Tested in air, 1.2/50-µs waveform per IEC 62368-1 8300 VPK VIOSM Maximum surge isolation voltage(4) Tested in oil (qualification test), 1.2/50-µs waveform per IEC 62368-1 10000 VPK Apparent charge(5) qpd CIO Barrier capacitance, input to output(6) RIO Insulation resistance, input to output(6) Method a, after input/output safety test subgroups 2 and 3, Vini = VIOTM, tini = 60 s, Vpd(m) = 1.2 × VIORM, tm = 10 s ≤5 Method a, after environmental tests subgroup 1, Vini = VIOTM, tini = 60 s, Vpd(m) = 1.6 × VIORM, tm = 10 s ≤5 Method b1, at routine test (100% production) and preconditioning (type test), Vini = VIOTM, tini = 1 s, Vpd(m) = 1.875 × VIORM, tm = 1 s ≤5 VIO = 0.5 VPP at 1 MHz ~1.5 VIO = 500 V at TA = 25°C > 1012 VIO = 500 V at 100°C ≤ TA ≤ 125°C > 1011 VIO = 500 V at TS = 150°C > 109 Pollution degree 2 Climatic category 55/125/21 VPK pC pF Ω UL1577 VISO (1) (2) (3) (4) (5) (6) 6 Withstand isolation voltage VTEST = VISO = 5700 VRMS, t = 60 s (qualification), VTEST = 1.2 × VISO = 6840 VRMS, t = 1 s (100% production test) 5000 VRMS Apply creepage and clearance requirements according to the specific equipment isolation standards of an application. Care must be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed circuit board (PCB) do not reduce this distance. Creepage and clearance on a PCB become equal in certain cases. Techniques such as inserting grooves, ribs, or both on a PCB are used to help increase these specifications. This coupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Testing is carried out in air to determine the surge immunity of the package. Testing is carried in oil to determine the intrinsic surge immunity of the isolation barrier. Apparent charge is electrical discharge caused by a partial discharge (pd). All pins on each side of the barrier are tied together, creating a two-pin device. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6.7 Safety-Related Certifications VDE UL DIN EN IEC 60747-17 (VDE 0884-17), EN IEC 60747-17, DIN EN IEC 62368-1 (VDE 0868-1), EN IEC 62368-1, IEC 62368-1 Clause : 5.4.3 ; 5.4.4.4 ; 5.4.9 Recognized under 1577 component recognition Reinforced insulation Single protection Certificate number: pending File number: E181974 6.8 Safety Limiting Values Safety limiting(1) intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry. A failure of the I/O can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheat the die and damage the isolation barrier potentially leading to secondary system failures. PARAMETER IS Safety input, output, or supply current PS Safety input, output, or total power TS Maximum safety temperature (1) TEST CONDITIONS MIN TYP MAX UNIT RθJA = 102.8°C/W, VDD1 = VDD2 = 5.5 V, TJ = 150°C, TA = 25°C 220 RθJA = 102.8°C/W, VDD1 = VDD2 = 3.6 V, TJ = 150°C, TA = 25°C 340 RθJA = 102.8°C/W, TJ = 150°C, TA = 25°C 1220 mW 150 °C mA The maximum safety temperature, TS, has the same value as the maximum junction temperature, TJ, specified for the device. The IS and PS parameters represent the safety current and safety power, respectively. Do not exceed the maximum limits of IS and PS. These limits vary with the ambient temperature, TA. The junction-to-air thermal resistance, RθJA, in the Thermal Information table is that of a device installed on a high-K test board for leaded surface-mount packages. Use these equations to calculate the value for each parameter: TJ = TA + RθJA × P, where P is the power dissipated in the device. TJ(max) = TS = TA + RθJA × PS, where TJ(max) is the maximum junction temperature. PS = IS × AVDDmax + IS × DVDDmax, where AVDDmax is the maximum high-side voltage and DVDDmax is the maximum controller-side supply voltage. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 7 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6.9 Electrical Characteristics minimum and maximum specifications apply from TA = –40°C to 125°C, VDD1 = 3.0 V to 27 V, VDD2 = 2.7 V to 5.5 V, VREF = 20 mV to 2.7 V(1), and VIN = –400 mV to 4 V(3); typical specifications are at TA = 25°C, VDD1 = 5 V, VDD2 = 3.3 V, and VREF = 250 mV (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ANALOG INPUT RIN Input resistance IBIAS Input bias current CIN Input capacitance IN pin, 0 ≤ VIN ≤ 4 V IN pin, 0 ≤ VIN ≤ 4 1 V(4) IN pin, –400 mV ≤ VIN ≤ 0 V(5) 0.1 –310 GΩ 25 –0.5 IN pin 4 nA pF REFERENCE PIN IREF Reference current VMSEL Mode selection threshold(2) REF to GND1, 20 mV < VREF ≤ 2.7 V 99 100 101 VREF rising 500 550 600 VREF falling 450 500 550 Mode selection threshold hysteresis 50 μA mV mV 300-mV FIXED-THRESHOLD COMPARATORS (CMP2 AND CMP3) VIT+ Positive-going trip threshold Cmp2 EIT+ Positive-going trip threshold error Cmp2 VIT– Negative-going trip threshold Cmp2 EIT– Negative-going trip threshold error Cmp2 VIT– Negative-going trip threshold Cmp3 EIT– Negative-going trip threshold error Cmp3 VIT+ Positive-going trip threshold Cmp3 EIT+ Positive-going trip threshold error Cmp3 VHYS Trip threshold hysteresis Cmp2 and Cmp3, (VIT+ – VIT–) 304 –3.5 mV 3.5 300 –3.5 mV 3.5 –304 –4.5 mV mV 4.5 –300 –4.5 mV mV mV 4.5 4 mV mV VARIABLE-THRESHOLD COMPARATORS (CMP0 AND CMP1) VIT+ EIT+ VIT– EIT– Positive-going trip threshold Positive-going trip threshold error Negative-going trip threshold Negative-going trip threshold error Cmp0 EIT– VIT+ Negative-going trip threshold Negative-going trip threshold error Positive-going trip threshold EIT+ Positive-going trip threshold error VHYS Trip threshold hysteresis mV –2 2 Cmp0, (VIT+ – VREF – VHYS), VREF = 250 mV, VHYS = 4 mV –2 2 Cmp0, (VIT+ – VREF – VHYS), VREF = 2 V, VHYS = 25 mV –5 5 Cmp0 VREF –2.5 2.5 Cmp0, (VIT– – VREF), VREF = 250 mV –2.5 2.5 –5 5 Cmp1 mV mV Cmp0, (VIT– – VREF), VREF = 20 mV Cmp0, (VIT– – VREF), VREF = 2 V VIT– VREF + VHYS Cmp0, (VIT+ – VREF – VHYS), VREF = 20 mV, VHYS = 4 mV –VREF – VHYS mV mV Cmp1, (VIT– + VREF + VHYS), VREF = 20 mV, VHYS = 4 mV –3 3 Cmp1, (VIT– + VREF + VHYS), VREF = 250 mV, VHYS = 4 mV –3 3 mV Cmp1 –VREF mV Cmp1, (VIT+ + VREF), VREF = 20 mV –3.5 3.5 Cmp1, (VIT+ + VREF), VREF = 250 mV –3.5 3.5 Cmp0 and Cmp1, (VIT+ – VIT–), VREF ≤ 450 mV 4 mV mV Cmp0 only, (VIT+ – VIT–), VREF ≥ 600 mV 25 80 250 5 100 DIGITAL OUTPUTS 8 VOL Low-level output voltage ISINK = 4 mA ILKG Open-drain output leakage current VDD2 = 5 V, VOUT = 5 V CMTI Common-mode transient immunity |VIN – VREF| ≥ 4 mV, RPULLUP = 10 kΩ Submit Document Feedback 15 40 mV nA V/ns Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6.9 Electrical Characteristics (continued) minimum and maximum specifications apply from TA = –40°C to 125°C, VDD1 = 3.0 V to 27 V, VDD2 = 2.7 V to 5.5 V, VREF = 20 mV to 2.7 V(1), and VIN = –400 mV to 4 V(3); typical specifications are at TA = 25°C, VDD1 = 5 V, VDD2 = 3.3 V, and VREF = 250 mV (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLY VDD1UV VDD1 undervoltage detection threshold VDD1POR VDD1 power-on reset threshold VDD1 rising 3 VDD1 falling 2.9 VDD1 falling 2.3 VDD2 rising 2.7 VDD2 falling 2.1 V V VDD2UV VDD2 undervoltage detection threshold IDD1 High-side supply current 3.2 4.3 mA IDD2 Low-side supply current 1.8 2.2 mA (1) (2) (3) (4) (5) V Reference voltages >1.6 V require VDD1 > VDD1MIN. See the Recommended Operating Conditions table for details. The voltage level VREF determines if the device operates as window-comparator with positive and negative thresholds or as simple comparator with positive thresholds only. See the Reference Input section for more details. But not exceeding the maximum input voltage specified in the Recommended Operating Conditions table. The typical value is measured at VIN = 0.4 V. The typical value is measured at VIN = –400 mV. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 9 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6.10 Switching Characteristics over operating ambient temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX VDD2 = 3.3 V, VREF = 250 mV, VOVERDRIVE = 10 mV, CL = 15 pF 280 410 VDD2 = 3.3 V, VREF = 2 V, VOVERDRIVE = 50 mV, CL = 15 pF 240 370 VDD2 = 3.3 V, VREF = 250 mV, VOVERDRIVE = 10 mV, CL = 15 pF 280 410 VDD2 = 3.3 V, VREF = 2 V, VOVERDRIVE = 50 mV, CL = 15 pF 240 370 UNIT OPEN-DRAIN OUTPUTS tpH Propagation delay time, |VIN| rising tpL Propagation delay time, |VIN| falling tf Output signal fall time ns ns RPULLUP = 4.7 kΩ, CL = 15 pF 2 ns MODE SELECTION tHSEL Comparator hysteresis selection deglitch time Cmp0, VREF rising or falling 10 µs tDIS13 Comparator disable deglitch time Cmp1 and Cmp3, VREF rising 10 µs tEN13 Comparator enable deglitch time Cmp1 and Cmp3, VREF falling 100 µs START-UP TIMING tLS ,STA Low-side start-up time VDD2 step to 2.7 V, VDD1 ≥ 3.0 V 40 µs tHS ,STA High-side start-up time VDD1 step to 3.0 V, VDD2 ≥ 2.7 V 45 µs tHS,BLK High-side blanking time 200 µs tHS,FLT High-side-fault detection delay time 100 µs 6.11 Timing Diagrams VREF + VOVERDRIVE VOVERDRIVE VREF VOVERDRIVE IN VREF – VOVERDRIVE tpH tpL OUTx 90% 50% 10% 10% tf Figure 6-1. Rise, Fall, and Delay Time Definition 300 mV VREF VIN –VREF –300 mV OUT2 OUT1 Figure 6-2. Functional Timing Diagram 10 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6.12 Insulation Characteristics Curves 400 1400 VDD1 = VDD2 = 3.6 V VDD1 = VDD2 = 5.5 V 350 1200 300 1000 PS (mW) IS (mA) 250 200 800 600 150 400 100 200 50 0 0 0 25 50 75 TA (°C) 100 125 150 0 D069 Figure 6-3. Thermal Derating Curve for Safety-Limiting Current per VDE 25 50 75 TA (°C) 100 125 150 D070 Figure 6-4. Thermal Derating Curve for Safety-Limiting Power per VDE Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 11 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6.13 Typical Characteristics at VDD1 = 5 V, VDD2 = 3.3 V (unless otherwise noted) 306 305 304 VIT (mV) 303 302 301 300 299 298 Device 1, VIT+ Device 2, VIT+ Device 3, VIT+ 297 296 0 5 10 15 VDD1 (V) Device 1, VIT− Device 2, VIT− Device 3, VIT− 20 25 30 D008a Figure 6-6. Cmp2 Trip Threshold vs Temperature 2 2 1.5 1.5 1 1 0.5 0.5 EIT (mV) EIT (mV) Figure 6-5. Cmp2 Trip Threshold vs Supply Voltage 0 -0.5 0 -0.5 -1 -1 Device 1, EIT+ Device 2, EIT+ Device 3, EIT+ -1.5 -2 0 5 10 15 VDD1 (V) Device 1, EIT− Device 2, EIT− Device 3, EIT− 20 25 Device 1, EIT+ Device 2, EIT+ Device 3, EIT+ -1.5 -2 -40 30 -25 -10 5 D008b Figure 6-7. Cmp2 Trip Threshold Error vs Supply Voltage 20 35 50 65 Temperature (C) Device 1, EIT− Device 2, EIT− Device 3, EIT− 80 95 110 125 D009b Figure 6-8. Cmp2 Trip Threshold Error vs Temperature 6 5 VHYS (mV) 4 3 2 Device 1 Device 2 Device 3 1 0 -40 Figure 6-9. Cmp2 Trip Threshold Hysteresis vs Supply Voltage 12 -25 -10 5 20 35 50 65 Temperature (C) 80 95 110 125 D013 Figure 6-10. Cmp2 Trip Threshold Hysteresis vs Temperature Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6.13 Typical Characteristics (continued) at VDD1 = 5 V, VDD2 = 3.3 V (unless otherwise noted) -296 -296 Device 1, VIT− Device 2, VIT− Device 3, VIT− -297 -298 -299 -299 -300 -300 -301 -302 -302 -303 -304 -304 -305 -305 -306 5 10 15 VDD1 (V) 20 25 -306 -40 30 -10 5 20 35 50 65 Temperature (C) 80 95 110 125 Figure 6-12. Cmp3 Trip Threshold vs Temperature 2 2 Device 1, EIT− Device 2, EIT− Device 3, EIT− 1.5 Device 1, EIT+ Device 2, EIT+ Device 3, EIT+ 1 1 0.5 0.5 0 -0.5 -0.5 -1 -1 -1.5 -2 5 10 15 VDD1 (V) 20 25 -2 -40 30 -25 -10 5 D014b Figure 6-13. Cmp3 Trip Threshold Error vs Supply Voltage 5 5 4 4 VHYS (mV) 6 2 20 35 50 65 Temperature (C) 80 95 110 125 D015b Figure 6-14. Cmp3 Trip Threshold Error vs Temperature 6 3 Device 1, EIT+ Device 2, EIT+ Device 3, EIT+ 0 -1.5 0 Device 1, EIT− Device 2, EIT− Device 3, EIT− 1.5 EIT (mV) EIT (mV) -25 D014a Figure 6-11. Cmp3 Trip Threshold vs Supply Voltage VHYS (mV) Device 1, VIT+ Device 2, VIT+ -301 -303 0 Device 1, VIT− Device 2, VIT− Device 3, VIT− -297 VIT (mV) VIT (mV) -298 Device 1, VIT+ Device 2, VIT+ Device 3, VIT+ 3 2 Device 1 Device 2 Device 3 1 0 0 5 10 15 VDD1 (V) 20 25 30 Device 1 Device 2 Device 3 1 0 -40 -25 D018 Figure 6-15. Cmp3 Trip Threshold Hysteresis vs Supply Voltage -10 5 20 35 50 65 Temperature (C) 80 95 110 125 D019 Figure 6-16. Cmp3 Trip Threshold Hysteresis vs Temperature Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 13 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6.13 Typical Characteristics (continued) 26 26 25 25 24 24 23 23 22 22 VIT (mV) VIT (mV) at VDD1 = 5 V, VDD2 = 3.3 V (unless otherwise noted) 21 20 19 21 20 19 18 Device 1, VIT+ Device 2, VIT+ Device 3, VIT+ 17 16 0 5 10 15 VDD1 (V) 18 Device 1, VIT− Device 2, VIT− Device 3, VIT− 20 25 Device 1, VIT+ Device 2, VIT+ Device 3, VIT+ 17 16 -40 30 -25 -10 5 D020a VREF = 20 mV 80 95 110 125 D021a VREF = 20 mV Figure 6-17. Cmp0 Trip Threshold vs Supply Voltage Figure 6-18. Cmp0 Trip Threshold vs Temperature 1.5 1.5 Device 1, EIT+ Device 2, EIT+ Device 3, EIT+ 1 Device 1, EIT− Device 2, EIT− Device 3, EIT− 1 0.5 EIT (mV) 0.5 EIT (mV) 20 35 50 65 Temperature (C) Device 1, VIT− Device 2, VIT− Device 3, VIT− 0 0 -0.5 -0.5 -1 -1 -1.5 0 5 10 15 VDD1 (V) 20 25 -1.5 -40 30 Device 1, EIT+ Device 2, EIT+ Device 3, EIT+ -25 -10 5 D020d VREF = 20 mV 20 35 50 65 Temperature (C) Device 1, EIT− Device 2, EIT− Device 3, EIT− 80 95 110 125 D021d VREF = 20 mV Figure 6-19. Cmp0 Trip Threshold Error vs Supply Voltage Figure 6-20. Cmp0 Trip Threshold Error vs Temperature 6 5 VHYS (mV) 4 3 2 Device 1 Device 2 Device 3 1 0 -40 -25 5 20 35 50 65 Temperature (C) 80 95 110 125 D025a VREF = 20 mV VREF = 20 mV Figure 6-21. Cmp0 Trip Threshold Hysteresis vs Supply Voltage 14 -10 Figure 6-22. Cmp0 Trip Threshold Hysteresis vs Temperature Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6.13 Typical Characteristics (continued) 256 256 255 255 254 254 253 253 252 252 VIT (mV) VIT (mV) at VDD1 = 5 V, VDD2 = 3.3 V (unless otherwise noted) 251 250 249 251 250 249 248 Device 1, VIT+ Device 2, VIT+ Device 3, VIT+ 247 246 0 5 10 248 Device 1, VIT− Device 2, VIT− Device 3, VIT− 15 VDD1 (V) 20 25 Device 1, VIT+ Device 2, VIT+ Device 3, VIT+ 247 246 -40 30 -25 -10 5 D020b VREF = 250 mV 95 110 125 D021b Figure 6-24. Cmp0 Trip Threshold vs Temperature 2.5 2.5 Device 1, EIT+ Device 2, EIT+ Device 3, EIT+ 2 1.5 Device 1, EIT− Device 2, EIT− Device 3, EIT− 2 1.5 1 1 0.5 0.5 EIT (mV) EIT (mV) 80 VREF = 250 mV Figure 6-23. Cmp0 Trip Threshold vs Supply Voltage 0 -0.5 0 -0.5 -1 -1 -1.5 -1.5 -2 -2 -2.5 -40 -2.5 0 5 10 15 VDD1 (V) 20 25 30 Device 1, EIT+ Device 2, EIT+ Device 3, EIT+ -25 -10 5 D020e VREF = 250 mV 20 35 50 65 Temperature (C) Device 1, EIT− Device 2, EIT− Device 3, EIT− 80 95 110 125 D021e VREF = 250 mV Figure 6-25. Cmp0 Trip Threshold Error vs Supply Voltage Figure 6-26. Cmp0 Trip Threshold Error vs Temperature 6 6 5 5 4 4 VHYS (mV) VHYS (mV) 20 35 50 65 Temperature (C) Device 1, VIT− Device 2, VIT− Device 3, VIT− 3 2 3 2 Device 1 Device 2 Device 3 1 0 0 5 10 15 VDD1 (V) 20 25 30 Device 1 Device 2 Device 3 1 0 -40 -25 D024b VREF = 250 mV -10 5 20 35 50 65 Temperature (C) 80 95 110 125 D025b VREF = 250 mV Figure 6-27. Cmp0 Trip Threshold Hysteresis vs Supply Voltage Figure 6-28. Cmp0 Trip Threshold Hysteresis vs Temperature Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 15 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6.13 Typical Characteristics (continued) 2.030 2.030 2.025 2.025 2.020 2.020 2.015 2.015 2.010 2.010 VIT (mV) VIT (mV) at VDD1 = 5 V, VDD2 = 3.3 V (unless otherwise noted) 2.005 2.000 1.995 2.005 2.000 1.995 1.990 Device 1, VIT+ Device 2, VIT+ Device 3, VIT+ 1.985 1.980 0 5 10 15 VDD1 (V) 1.990 Device 1, VIT− Device 2, VIT− Device 3, VIT− 20 25 Device 1, VIT+ Device 2, VIT+ Device 3, VIT+ 1.985 1.980 -40 30 -25 -10 5 D020c VREF = 2 V 110 125 D021c 5 Device 1, EIT+ Device 2, EIT+ Device 3, EIT+ 4 3 Device 1, EIT− Device 2, EIT− Device 3, EIT− 4 3 2 2 1 1 EIT (mV) EIT (mV) 95 Figure 6-30. Cmp0 Trip Threshold vs Temperature 5 0 -1 0 -1 -2 -2 -3 -3 -4 -4 -5 0 5 10 15 VDD1 (V) 20 25 -5 -40 30 Device 1, EIT+ Device 2, EIT+ Device 3, EIT+ -25 -10 5 D020f VREF = 2 V 20 35 50 65 Temperature (C) Device 1, EIT− Device 2, EIT− Device 3, EIT− 80 95 110 125 D021f VREF = 2 V Figure 6-31. Cmp0 Trip Threshold Error vs Supply Voltage Figure 6-32. Cmp0 Trip Threshold Error vs Temperature 30 30 25 25 20 20 VHYS (mV) VHYS (mV) 80 VREF = 2 V Figure 6-29. Cmp0 Trip Threshold vs Supply Voltage 15 10 15 10 Device 1 Device 2 Device 3 5 0 0 5 10 15 VDD1 (V) 20 25 30 Device 1 Device 2 Device 3 5 0 -40 -25 D024c VREF = 2 V -10 5 20 35 50 65 Temperature (C) 80 95 110 125 D025c VREF = 2 V Figure 6-33. Cmp0 Trip Threshold Hysteresis vs Supply Voltage 16 20 35 50 65 Temperature (C) Device 1, VIT− Device 2, VIT− Device 3, VIT− Figure 6-34. Cmp0 Trip Threshold Hysteresis vs Temperature Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6.13 Typical Characteristics (continued) at VDD1 = 5 V, VDD2 = 3.3 V (unless otherwise noted) -16 -16 Device 1, VIT− Device 2, VIT− Device 3, VIT− -17 -18 -19 -19 -20 -20 -21 -22 -22 -23 -24 -24 -25 -25 -26 5 10 15 VDD1 (V) 20 25 -26 -40 30 Device 1, VIT+ Device 2, VIT+ Device 3, VIT+ -21 -23 0 Device 1, VIT− Device 2, VIT− Device 3, VIT− -17 VIT (mV) VIT (mV) -18 Device 1, VIT+ Device 2, VIT+ Device 3, VIT+ -25 -10 5 D026a VREF = 20 mV 20 35 50 65 Temperature (C) 80 95 110 125 D027a VREF = 20 mV Figure 6-35. Cmp1 Trip Threshold vs Supply Voltage Figure 6-36. Cmp1 Trip Threshold vs Temperature 1.5 1 EIT (mV) 0.5 0 -0.5 Device 1, EIT− Device 2, EIT− Device 3, EIT− -1 -1.5 0 5 10 15 VDD1 (V) Device 1, EIT+ Device 2, EIT+ Device 3, EIT+ 20 25 30 D026c VREF = 20 mV VREF = 20 mV Figure 6-38. Cmp1 Trip Threshold Error vs Temperature 6 6 5 5 4 4 VHYS (mV) VHYS (mV) Figure 6-37. Cmp1 Trip Threshold Error vs Supply Voltage 3 2 3 2 Device 1 Device 2 Device 3 1 0 0 5 10 15 VDD1 (V) 20 25 30 Device 1 Device 2 Device 3 1 0 -40 -25 D030a VREF = 20 mV -10 5 20 35 50 65 Temperature (C) 80 95 110 125 D031a VREF = 20 mV Figure 6-39. Cmp1 Trip Threshold Hysteresis vs Supply Voltage Figure 6-40. Cmp1 Trip Threshold Hysteresis vs Temperature Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 17 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6.13 Typical Characteristics (continued) at VDD1 = 5 V, VDD2 = 3.3 V (unless otherwise noted) -246 -246 Device 1, VIT− Device 2, VIT− Device 3, VIT− -247 -248 -249 -249 -250 -250 -251 -252 -252 -253 -254 -254 -255 -255 -256 5 10 15 VDD1 (V) 20 25 -256 -40 30 -25 -10 5 D026b VREF = 250 mV Figure 6-41. Cmp1 Trip Threshold vs Supply Voltage Device 1, EIT− Device 2, EIT− Device 3, EIT− 1.5 95 110 125 D027b Figure 6-42. Cmp1 Trip Threshold vs Temperature Device 1, EIT+ Device 2, EIT+ Device 3, EIT+ Device 1, EIT− Device 2, EIT− Device 3, EIT− 2 1.5 1 1 0.5 0.5 EIT (mV) EIT (mV) 80 2.5 2 0 -0.5 Device 1, EIT+ Device 2, EIT+ Device 3, EIT+ 0 -0.5 -1 -1 -1.5 -1.5 -2 -2 -2.5 0 5 10 15 VDD1 (V) 20 25 -2.5 -40 30 -25 -10 5 D026d VREF = 250 mV 20 35 50 65 Temperature (C) 80 95 110 125 D027d VREF = 250 mV Figure 6-43. Cmp1 Trip Threshold Error vs Supply Voltage Figure 6-44. Cmp1 Trip Threshold Error vs Temperature 6 6 5 5 4 4 VHYS (mV) VHYS (mV) 20 35 50 65 Temperature (C) VREF = 250 mV 2.5 3 2 3 2 Device 1 Device 2 Device 3 1 0 0 5 10 15 VDD1 (V) 20 25 30 Device 1 Device 2 Device 3 1 0 -40 -25 D030b VREF = 250 mV -10 5 20 35 50 65 Temperature (C) 80 95 110 125 D031b VREF = 250 mV Figure 6-45. Cmp1 Trip Threshold Hysteresis vs Supply Voltage 18 Device 1, VIT+ Device 2, VIT+ Device 3, VIT+ -251 -253 0 Device 1, VIT− Device 2, VIT− Device 3, VIT− -247 VIT (mV) VIT (mV) -248 Device 1, VIT+ Device 2, VIT+ Device 3, VIT+ Figure 6-46. Cmp1 Trip Threshold Hysteresis vs Temperature Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6.13 Typical Characteristics (continued) at VDD1 = 5 V, VDD2 = 3.3 V (unless otherwise noted) 310 310 VINP rising VINP falling 290 300 Propagation delay time (ns) Propagation delay time (ns) 300 280 270 260 250 240 230 220 290 280 270 260 250 240 230 210 220 200 210 -40 0 10 20 30 40 50 60 Overdrive (mV) 70 80 90 100 VINP rising VINP falling -25 -10 5 D042 20 35 50 65 Temperature (C) 80 95 110 125 D059 Figure 6-48. Cmp2 Propagation Delay vs Temperature Figure 6-47. Cmp2 Propagation Delay vs Overdrive 310 Propagation delay time (ns) 300 290 280 270 260 250 240 230 VINP falling VINP rising 220 210 -40 -10 5 20 35 50 65 Temperature (C) 80 95 110 125 D060 Figure 6-50. Cmp3 Propagation Delay vs Temperature Figure 6-49. Cmp3 Propagation Delay vs Overdrive 310 310 VINP rising VINP falling 300 290 300 Propagation delay time (ns) Propagation delay time (ns) -25 280 270 260 250 240 230 290 280 270 260 250 240 230 220 220 210 210 -40 0 10 20 30 40 50 60 Overdrive (mV) 70 80 90 100 VINP rising VINP falling -25 D046a Figure 6-51. Cmp0 Propagation Delay vs Overdrive -10 5 20 35 50 65 Temperature (C) 80 95 110 125 D057 Figure 6-52. Cmp0 Propagation Delay vs Temperature Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 19 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6.13 Typical Characteristics (continued) at VDD1 = 5 V, VDD2 = 3.3 V (unless otherwise noted) 310 310 VINP falling VINP rising 300 290 Propagation delay time (ns) Propagation delay time (ns) 300 280 270 260 250 240 230 290 280 270 260 250 240 230 220 220 210 210 -40 0 10 20 30 40 50 60 Overdrive (mV) 70 80 90 100 VINP rising VINP falling -25 -10 5 D050 20 35 50 65 Temperature (C) 80 95 110 125 D058 Figure 6-54. Cmp1 Propagation Delay vs Temperature Figure 6-53. Cmp1 Propagation Delay vs Overdrive 7 VDD1 = 3.3 V VDD1 = 5 V 6 IIB (nA) 5 4 3 2 1 0 -0.5 0 0.5 1 1.5 2 2.5 VIN (V) 3 3.5 4 4.5 5 D001 VIN = 2 V Figure 6-56. Input Bias Current vs Temperature Figure 6-55. Input Bias Current vs Input Voltage 102 102 101.5 101 100.5 IREF (A) IREF (A) 101 100 99.5 99 Device 1 Device 2 Device 3 98.5 98 10 100 1000 5000 VREF (mV) 99 Device 1 Device 2 Device 3 98 -40 -25 D007 Figure 6-57. Reference Current vs Reference Voltage 20 100 -10 5 20 35 50 65 Temperature (C) 80 95 110 125 D007b Figure 6-58. Reference Current vs Temperature Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 6.13 Typical Characteristics (continued) at VDD1 = 5 V, VDD2 = 3.3 V (unless otherwise noted) 5 5 VREF = 250 mV VREF = 2 V 4 4 3 3 IVDD1 (mA) IVDD1 (mA) VREF = 250 mV VREF = 2 V 2 1 1 0 0 3 6 9 12 15 18 VDD1 (V) 21 24 27 0 -40 30 -10 5 20 35 50 65 Temperature (C) 2 2 1.8 1.8 IVDD2 (mA) 2.2 1.6 1.4 80 95 110 125 D033a Figure 6-60. High-Side Supply Current vs Temperature 2.2 1.2 2.5 -25 D038a Figure 6-59. High-Side Supply Current vs Supply Voltage IVDD2 (mA) 2 1.6 1.4 3 3.5 4 4.5 VDD2 (V) 5 5.5 6 1.2 -40 -25 D040 Figure 6-61. Low-Side Supply Current vs Supply Voltage -10 5 20 35 50 65 Temperature (C) 80 95 110 125 D041 Figure 6-62. Low-Side Supply Current vs Temperature Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 21 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 7 Detailed Description 7.1 Overview The AMC23C14 is a dual, isolated window comparator with open-drain outputs. Window comparator 1 is comprised of comparator Cmp0 and Cmp1 and window comparator 2 is comprised of Cmp2 and Cmp3. Cmp0 and Cmp2 compare the input voltage (VIN) against their respective positive thresholds (VIT+) and Cmp1 and Cmp3 compare the input voltage (VIN) against their respective negative thresholds (VIT–). The respective VIT+ and VIT– thresholds are of equal magnitude but opposite signs, therefore both window comparators have windows that are centered around 0 V. Window comparator 2 has fixed thresholds of ±300 mV. Window comparator 1 has adjustable thresholds from ±20 mV to ±300 mV through an internally generated 100-μA reference current and a single external resistor. The open-drain outputs are actively pulled low when the input voltage (VIN) is outside the respective comparison window, but are otherwise in a high-impedance state. When the voltage on the REF pin is greater than VMSEL, the device operates in positive-comparator mode. This mode is particularly useful for monitoring positive voltage supplies. Both negative comparators (Cmp1 and Cmp3) are disabled and only the positive comparators (Cmp0 and Cmp2) are functional. The reference voltage in this mode can be as high as 2.7 V. Galvanic isolation between the high- and low-voltage side of the device is achieved by transmitting the comparator states across a SiO2-based, reinforced capacitive isolation barrier. This isolation barrier supports a high level of magnetic field immunity, as described in the ISO72x Digital Isolator Magnetic-Field Immunity application report. The digital modulation scheme used in the AMC23C14 to transmit data across the isolation barrier, and the isolation barrier characteristics itself, result in high reliability and common-mode transient immunity. 7.2 Functional Block Diagram Window Comparator 2 VDD1 AMC23C14 VDD2 LDO Cmp2 Barrier 300 mV OUT2 IN Cmp3 GND1 RX OUT1 Cmp1 Isolation Cmp0 VREF Logic 100
A REF TX Logic –300 mV –VREF GND2 Window Comparator 1 22 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 7.3 Feature Description 7.3.1 Analog Input The AMC23C14 has a single input that drives both window comparators. Window comparator 1 has an adjustable threshold and window comparator 2 has a fixed threshold. The positive comparators trip when the input voltage (VIN) rises above the respective VIT+ threshold that is defined as the reference value plus the internal hysteresis voltage (for example, 304 mV for the fixed-threshold comparator). The positive comparators release when VIN drops below the respective VIT– threshold that equals the reference value (for example, 300 mV for the fixed-threshold comparator). The negative comparators trip when VIN drops below the respective VIT– threshold that is defined as the negative reference value minus the internal hysteresis voltage (for example, –304 mV for the fixed-threshold comparator). The negative comparators release when VIN rises above the respective VIT+ threshold that equals the negative reference value (for example –300 mV for the fixed-threshold comparator). The difference between VIT+ and VIT– is referred to as the comparator hysteresis and is 4 mV for reference voltages below 450 mV. The integrated hysteresis makes the AMC23C14 less sensitive to input noise and provides stable operation in noisy environments without having to add external positive feedback to create hysteresis. The hysteresis of Cmp0 increases to 25 mV for reference values (VREF) greater than 600 mV. See the Reference Input description for more details. Figure 7-1 shows a timing diagram of the relationship between hysteresis and switching thresholds. VIT+ VHYS VIT– (300 mV) 0V VIN VIT+ (–300 mV) VIT– VHYS OUT2 VIT+ VHYS VIT– (VREF) 0V VIN VIT+ (–VREF) VIT– VHYS OUT1 Figure 7-1. Switching Thresholds and Hysteresis Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 23 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 7.3.2 Reference Input The voltage on the REF pin determines the trip threshold of window comparator 1. The internal precision current source forces a 100-μA current through an external resistor connected from the REF pin to GND1. The resulting voltage across the resistor (VREF) equals the magnitude of the positive and negative trip thresholds, see Figure 7-1. Place a 100-nF capacitor parallel to the resistor to filter the reference voltage. This capacitor must be charged by the 100-μA current source during power-up and the charging time may exceed the high-side blanking time (tHS,BLK). In this case, as shown in Figure 7-2, window comparator 1 may output an incorrect state after the high-side blanking time has expired until VREF reaches its final value. See the Power-Up and Power-Down Behavior section for more details on power-up behavior. VDD1 VDD2 ON tHS,STA + tHS,BLK VDD2 (low-side) VDD2UV (Hi-Z) 90% VDD2UV normal operation OUT2 normal (open-drain) operation (Hi-Z) normal operation OUT1 normal (open-drain) operation (Hi-Z) tLS,STA OUT1 (Hi-Z) (open-drain) (Hi-Z) Figure 7-9. VDD1 Turns On, Followed by VDD2 (Long Delay) Figure 7-10. VDD2 Turns Off, Followed by VDD1 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 27 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 7.3.6 VDD1 Brownout and Power-Loss Behavior Brownout is a condition where the VDD1 supply droops below the specified operating voltage range but the device remains functional. Power-loss is a condition where the VDD1 supply drops below a level where the device stops being functional. Depending on the duration and the voltage level, a brownout condition may or may not be noticeable at the output of the device. A power-loss condition is always signaled on the output of the isolated comparator. Figure 7-11 through Figure 7-13 show typical brownout and power-loss scenarios. In Figure 7-11, VDD1 droops below the undervoltage detection threshold (VDD1UV) but recovers before the high-side-fault detection delay time (tHS,FLT) expires. The brownout event has no effect on the comparator outputs. In Figure 7-12, VDD1 droops below the undervoltage detection threshold (VDD1UV) for more than the high-sidefault detection delay time (tHS,FLT). The brownout condition is detected as a fault and both outputs are pulled low after a delay equal to tHS,FLT. The device resumes normal operation as soon as VDD1 recovers above the VDD1UV threshold. VDD1 (high-side) VDD1UV VDD1 (high-side) VDD1UV < tHS,FLT tHS,FLT VDD2 (low-side) VDD2 (low-side) ON ON OUT2 (open-drain) no change on output OUT2 normal (open-drain) operation OUT1 (open-drain) no change on output OUT1 normal (open-drain) operation 90% fault normal operation normal operation Figure 7-11. Output Response to a Short Brownout Figure 7-12. Output Response to a Long Brownout Event on VDD1 Event on VDD1 In Figure 7-13, VDD1 droops below the power-on-reset (POR) threshold (VDD1POR). The power-loss condition is detected as a fault and both outputs are pulled low after a delay equal to tHS,FLT. The device resumes normal operation after a delay equal to tHS,STA + tHS,BLK after VDD1 recovers above the VDD1UV threshold. VDD1 (high-side) VDD1UV VDD1POR tHS,STA+ tHS,BLK VDD2 (low-side) ON tHS,FLT OUT2 normal (open-drain) operation 90% fault normal operation OUT1 normal (open-drain) operation 90% fault normal operation Figure 7-13. Output Response to a Power-Loss Event on VDD1 28 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 7.4 Device Functional Modes The AMC23C14 is operational when the power supplies VDD1 and VDD2 are applied, as specified in the Recommended Operating Conditions table. The four comparators on the high-side (Cmp0 to Cmp3) function as two independent window comparators when the voltage on the REF pin is below the VMSEL threshold. If the voltage on the REF pin exceeds the VMSEL threshold, the negative comparators (Cmp1 and Cmp3) are disabled, and Cmp0 and Cmp2 function as two independent positive comparators, as described in the Reference Input section. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 29 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 8 Application and Implementation Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality. 8.1 Application Information With its low response time, high common-mode transient immunity (CMTI) and reinforced isolation barrier, the AMC23C14 is designed to provide fast and reliable overcurrent and overvoltage detection for high-voltage applications in harsh and noisy environments. 8.2 Typical Applications 8.2.1 Overcurrent and Short-Circuit Current Detection Fast overcurrent and short-circuit current detection is a common requirement in DC/DC converter and motorcontrol applications, and can be implemented with an AMC23C14 isolated window comparator as shown in Figure 8-1. DC-link Low-side supply (3..5.5 V) R2 4.7 k HS Gate Driver Supply (3..27 V) R4 10  R3 4.7 k AMC23C14 R5 10  C2 1 µF C1 100 nF C6 1 nF R1 1.96 k VDD1 VDD2 IN OUT2 to MCU REF OUT1 to MCU GND1 GND2 C5 100 nF C3 100 nF C4 1µF Low-side supply (3..5.5 V) AMC1300B VDD2 INP OUTP INN OUTN GND1 GND2 RSHUNT 10 m
LS Gate Driver Supply Barrier ADC Isoation M 3~ VDD1 Figure 8-1. Using the AMC23C14 for Overcurrent and Short-Circuit Detection The load current flowing through an external shunt resistor RSHUNT produces a voltage drop that is sensed by the AMC1300B for control purposes. The same voltage is monitored by the AMC23C14 that is connected in parallel to the current-sensing amplifier and provides a fast sensing path for positive and negative fault-current detection. The trip threshold for overcurrent detection is set by the external resistor R1. The trip threshold for short-circuit detection is fixed by the internal 300-mV reference. Overcurrent conditions are signaled on OUT1, and short-circuit conditions are signaled on OUT2. As depicted in Figure 8-1, the integrated low-dropout (LDO) regulator on the high-side allows direct connection of the VDD1 input to a commonly used floating gate-driver supply. Alternatively, the AMC23C14 can share a regulated supply with the AMC1300B. In that case, the VDD1 pin of the AMC23C14 connects directly to the VDD1 pin of the AMC1300B and R4 is not needed. The fast response time and high common-mode transient immunity (CMTI) of the AMC23C14 ensure reliable and accurate operation even in high-noise environments. 30 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 8.2.1.1 Design Requirements Table 8-1 lists the parameters for the application example in Figure 8-1. Table 8-1. Design Requirements PARAMETER VALUE High-side supply voltage 3 V to 27 V Low-side supply voltage 2.7 V to 5.5 V Shunt-resistor value 10 mΩ Linear input voltage range of the AMC1300B ±250 mV Maximum peak motor current ±25 A Overcurrent detection threshold ±20 A Short-circuit current detection threshold ±30 A 8.2.1.2 Detailed Design Procedure The value of the shunt resistor in this example is 10 mΩ, determined by the linear input voltage range of the AMC1300B current-sensing amplifier (±250 mV) and the full-scale current of ±25 A. The short-circuit current detection threshold of the AMC23C14 is a fixed 300-mV value and places the short-circuit current threshold at 30 A. At the desired 20-A overcurrent detection level, the voltage drop across the shunt resistor is 10 mΩ × 20 A = 200 mV. The positive-going trip threshold of window comparator 1 is VREF + VHYS, where VHYS is 4 mV as specified in the Electrical Characteristics table and VREF is the voltage across R1 that is connected between the REF and GND1 pins. R1 is calculated as (VTRIP – VHYS) / IREF = (200 mV – 4 mV) / 100 μA = 1.96 kΩ and matches a value from the E96 series (1% accuracy). A 10-Ω, 1-nF RC filter (R5, C6) is placed at the input of the comparator to filter the input signal and reduce noise sensitivity. This filter adds 10 Ω × 1 nF = 10 ns of propagation delay that must be considered when calculating the overall response time of the protection circuit. Larger filter constants are preferable to increase noise immunity if the system can tolerate the additional delay. Table 8-2 summarizes the key parameters of the design. Table 8-2. Overcurrent and Short-Circuit Detection Design Example PARAMETER VALUE Reference resistor value (R1) 1.96 kΩ Reference capacitor value (C5) 100 nF Reference voltage 196 mV Reference voltage settling time (to 90% of final value) 470 μs Overcurrent trip threshold (rising) 200 mV / 20.0 A Overcurrent trip threshold (falling) 196 mV / 19.6 A Short-circuit current trip threshold (rising) 304 mV / 30.4 A Short-circuit current trip threshold (falling) 300 mV / 30.0 A Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 31 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 8.2.2 Overvoltage and Undervoltage Detection Industrial I/O modules are frequently powered by external field supplies with a nominal voltage of 24 V and a tolerance of –15% to +20%. In safety-critical applications, the controller-side may need to know whether the voltage is in the valid range for correct operation or not. Figure 8-2 shows the AMC23C14 in an application that monitors a 24-V supply on the high-side and signals undervoltage and overvoltage conditions to the programmable logic controller (PLC) on the low-side. The voltage divider R5 and R6 is sized to trip the fixed internal 300-mV threshold when the power supply exceeds the minimum valid operating voltage of 20.4 V (24 V – 15%). In a second step, R1 (connected to the REF pin) is sized to trip the adjustable-threshold comparator when the power supply exceeds 28.8 V (24 V + 20%). The AMC23C14 is powered from the field supply and is protected against voltages greater than 30 V by a Zener diode (Z1) and shunt resistor R4. When the power supply is below 20.4 V, both outputs of the AMC23C14 are in a Hi-Z state. Between 20.4 V and 28.8 V, OUT1 is in a Hi-Z state and OUT2 is actively pulled low. Both outputs are pulled low, as shown in Figure 8-3, when the power supply is above 28.8 V. Low-side supply (2.7..5.5 V) 24 V field supply R2 R3 4.7 k 4.7 k R4 1 k R5 237 k AMC23C14 + – R6 3.52 k
Z1 27 V C2 1 µF C1 100 nF C6 1 nF R1 4.17 k VDD1 VDD2 IN OUT2 to PLC REF OUT1 to PLC GND1 GND2 C5 100 nF C3 100 nF C4 1 µF Figure 8-2. Using the AMC23C14 for Overvoltage and Undervoltage Detection 28.8 V 28.5 V Supply Voltage Valid Supply Range 20.8 V 20.5 V OUT2 OUT1 Off Undervoltage Normal Overvoltage Normal Undervoltage Off Figure 8-3. Output of the AMC23C14 in Supply Voltage Supervisor Application 32 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 8.2.2.1 Design Requirements Table 8-1 lists the parameters for the application example in Figure 8-2. Table 8-3. Design Requirements PARAMETER VALUE High-side supply voltage 3 V to 27 V Low-side supply voltage 2.7 V to 5.5 V Field supply range 24 V, –15 % to +20% Undervoltage detection threshold 20.4 V Overvoltage detection threshold 28.8 V Cross-current in resistor divider (R5, R6) 100 μA 8.2.2.2 Detailed Design Procedure The 100-μA, cross-current requirement at nominal field-supply voltage (24 V) determines that the total impedance of the resistor divider comprised of R5 and R6 is 240 kΩ. The impedance of the voltage divider is dominated by R5, and therefore R5 is chosen as 237 kΩ. At a field-supply voltage of 20.4 V, the voltage across R6 must equal the fixed-comparator threshold of 300 mV. This value determines the voltage divider ratio and the ideal value of R6 is calculated as R6 = R5 × 300 mV / (VTRIP – 300 mV), where VTRIP equals 20.4 V. The calculated value for R6 is 3.54 kΩ and the closest lower value from the E192 series is 3.52 kΩ. With R6 and R5 known, the voltage can be calculated that is present at the input of the comparator when the field supply reaches 28.8 V, which is the upper limit of the valid operating range. This voltage is V2 = 28.8 V × (R6 / (R5 + R6) = 421.5 mV, and determines the value of R1. R1 is the resistor connected to the REF pin of the AMC23C14. R1 is calculated as (V2 – VHYS) / IREF = (421.5 mV – 4 mV) / 100 μA = 4.17 kΩ. The value 4.17 kΩ matches a value in the E192 series. The comparator hysteresis voltage (VHYS) is subtracted from V2 because the comparator trips at VREF + VHYS, see Figure 7-1. With R5 = 237 kΩ, R6 = 3.52 kΩ, and R1 = 4.17 kΩ, the resulting rising and falling thresholds are 20.8 V and 20.5 V for undervoltage detection and 28.8 V and 28.5 V for overvoltage detection, see Figure 8-3. Table 8-4 summarizes the key parameters of the design. Table 8-4. Overvoltage and Undervoltage Detection Design Example PARAMETER VALUE Voltage divider, top resistor value (R5) 237 kΩ Voltage divider, bottom resistor value (R6) 3.52 kΩ Reference resistor value (R1) 4.17 kΩ Reference capacitor value (C5) 100 nF Reference voltage 417 mV Reference voltage settling time (to 90% of final value) 960 μs Undervoltage trip threshold (rising) 20.5 V Undervoltage trip threshold (falling) 20.8 V Overvoltage trip threshold (rising) 28.8 V Overvoltage trip threshold (rising) 28.5 V Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 33 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 8.2.3 Application Curves Figure 8-4 shows the typical response of the AMC23C14 to a bipolar, triangular input waveform with an amplitude of 720 mVPP. OUT1 switches when VIN crosses the ±250-mV level determined by the REF pin voltage that is biased to 250 mV in this example. OUT2 switches when VIN crosses the ±300-mV level determined by the fixed internal reference value. Figure 8-4. Output Response of the AMC23C14 to a Triangular Input Waveform The integrated LDO of the AMC23C14 greatly relaxes the power-supply requirements on the high-voltage side and allows powering the device from non-regulated transformer, charge pump, and bootstrap supplies. As shown in Figure 8-5 through Figure 8-7, the internal LDO provides a stable operating voltage to the internal circuitry, allowing the trip thresholds to remain mostly undisturbed even at ripple voltages of 2 VPP and higher. 1.4 VDD1 = 5 V VDD1 = 10 V 1.2 Trip Threshold Uncertainty (mV) Trip Threshold Uncertainty (mV) 1.4 1 0.8 0.6 0.4 0.2 1 0.8 0.6 0.4 0.2 0 0 0 1 VDD1 2 3 Ripple Voltage (VPP) 4 5 0 D063a Figure 8-5. Trip Threshold Sensitivity to VDD1 Ripple Voltage (Cmp0, fRIPPLE = 10 kHz) 34 VDD1 = 5 V VDD1 = 10 V 1.2 1 2 3 VDD1 Ripple Voltage (VPP) 4 5 D063b Figure 8-6. Trip Threshold Sensitivity to VDD1 Ripple Voltage (Cmp1, fRIPPLE = 10 kHz) Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 1.4 VDD1 = 5 V VDD1 = 10 V 1.2 Trip Threshold Uncertainty (mV) Trip Threshold Uncertainty (mV) 1.4 1 0.8 0.6 0.4 0.2 0 0 1 2 3 VDD1 Ripple Voltage (VPP) 4 5 VDD1 = 5 V VDD1 = 10 V 1.2 1 0.8 0.6 0.4 0.2 0 0 D063c Figure 8-7. Trip Threshold Sensitivity to VDD1 Ripple Voltage (Cmp2, fRIPPLE = 10 kHz) 1 2 3 VDD1 Ripple Voltage (VPP) 4 5 D063d Figure 8-8. Trip Threshold Sensitivity to VDD1 Ripple Voltage (Cmp3, fRIPPLE = 10 kHz) 8.3 Best Design Practices Keep the connection between the low-side of the sense resistor and the GND1 pin of the AMC23C14 short and low impedance. Any voltage drop in the ground line adds error to the voltage sensed at the input of the comparator and leads to inaccuracies in the trip thresholds. For best common-mode transient immunity, place the filter capacitor C5 as closely to the REF pin as possible as illustrated in Figure 8-10. Use a low value pullup resistor (5.5 V) place a 10-Ω resistor (R4) is series with the VDD1 power supply for additional filtering. Low-side supply (2.7..5.5 V) High-side supply (3..27V) R2 4.7 k R4 10  AMC23C14 R5 10 Ω RSHUNT I C2 1 µF R3 4.7 k C1 100 nF C6 1 nF VDD1 VDD2 IN OUT2 to MCU REF OUT1 to MCU GND1 GND2 C5 R1 1.96 k
100 nF C3 100 nF C4 1 µF Figure 8-9. Decoupling of the AMC23C14 Capacitors must provide adequate effective capacitance under the applicable DC bias conditions they experience in the application. Multilayer ceramic capacitors (MLCCs) typically exhibit only a fraction of their nominal capacitance under real-world conditions and this factor must be taken into consideration when selecting these capacitors. This problem is especially acute in low-profile capacitors, in which the dielectric field strength is higher than in taller components. Reputable capacitor manufacturers provide capacitance versus DC bias curves that greatly simplify component selection. 8.5 Layout 8.5.1 Layout Guidelines Figure 8-10 shows a layout recommendation with the critical placement of the decoupling capacitors (as close as possible to the AMC23C14 supply pins) and placement of the other components required by the device. 8.5.2 Layout Example High-side supply R5 C4 C3 C6 IN Low-side supply VDD2 C1 AMC23C14 C5 REF R1 RSHUNT C2 VDD1 R4 Clearance area, to be kept free of any conductive materials. OUT2 to MCU OUT1 to MCU GND2 GND1 Top Metal Inner or Bottom Layer Metal Via Figure 8-10. Recommended Layout of the AMC23C14 36 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 AMC23C14 www.ti.com SBAS945A – FEBRUARY 2022 – REVISED JULY 2022 9 Device and Documentation Support 9.1 Documentation Support 9.1.1 Related Documentation For related documentation, see the following: • • • • • Texas Instruments, Isolation Glossary application report Texas Instruments, Semiconductor and IC Package Thermal Metrics application report Texas Instruments, ISO72x Digital Isolator Magnetic-Field Immunity application report Texas Instruments, AMC1300 Precision, ±250-mV Input, Reinforced Isolated Amplifier data sheet Texas Instruments, Isolated Amplifier Voltage Sensing Excel Calculator design tool 9.2 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on Subscribe to updates to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 9.3 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 9.4 Trademarks TI E2E™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners. 9.5 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 9.6 Glossary TI Glossary This glossary lists and explains terms, acronyms, and definitions. 10 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: AMC23C14 37 PACKAGE OPTION ADDENDUM www.ti.com 31-Jan-2023 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) AMC23C14DWV ACTIVE SOIC DWV 8 64 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 MC23C14 Samples AMC23C14DWVR ACTIVE SOIC DWV 8 1000 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 MC23C14 Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of