Not Recommended For New Designs
bq20z45-R1
www.ti.com
SLUS992 – DECEMBER 2009
SBS 1.1-Compliant Gas Gauge and Protection Enabled With Impedance Track™
Check for Samples: bq20z45-R1
FEATURES
1
•
2
•
•
•
•
•
•
•
•
•
•
Next Generation Patented Impedance Track™
Technology Accurately Measures Available
Charge in Li-Ion and Li-Polymer Batteries
– Better Than 1% Error Over the Lifetime of
the Battery
Supports the Smart Battery Specification
SBS V1.1
Flexible Configuration for 2 to 4 Series Li-Ion
and Li-Polymer Cells
Powerful 8-Bit RISC CPU With Ultralow Power
Modes
Full Array of Programmable Protection
Features
– Voltage, Current, and Temperature
Satisfies JEITA Guidelines
Added Flexibility to Handle More Complex
Charging Profiles
Lifetime Data Logging
Supports SHA-1 Authentication
Complete Battery Protection and Gas Gauge
Solution in One Package
Available in a 38-Pin TSSOP (DBT) package
DESCRIPTION
The bq20z45-R1 SBS-compliant gas gauge and
protection IC is a single IC solution designed for
battery-pack
or
in-system
installation.
The
bq20z45-R1 measures and maintains an accurate
record of available charge in Li-ion or Li-polymer
batteries using its integrated high-performance
analog peripherals, monitors capacity change, battery
impedance, open-circuit voltage, and other critical
parameters of the battery pack as well and reports
the information to the system host controller over a
serial-communication bus. Together with the
integrated analog front-end (AFE) short-circuit and
overload protection, the bq20z45-R1 maximizes
functionality and safety while minimizing external
component count, cost, and size in smart battery
circuits.
The implemented Impedance Track™ gas gauging
technology continuously analyzes the battery
impedance, resulting in superior gas-gauging
accuracy. This enables remaining capacity to be
calculated with discharge rate, temperature, and cell
aging all accounted for during each stage of every
cycle with high accuracy.
APPLICATIONS
•
•
•
Notebook PCs
Medical and Test Equipment
Portable Instrumentation
Table 1. AVAILABLE OPTIONS
TA
–40°C to 85°C
(1)
(2)
(3)
PACKAGE (1)
38-PIN TSSOP (DBT) Tube
38-PIN TSSOP (DBT) Tape and Reel
bq20z45-R1DBT (2)
bq20z45-R1DBTR (3)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
A single tube quantity is 50 units.
A single reel quantity is 2000 units
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Impedance Track is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
Not Recommended For New Designs
bq20z45-R1
SLUS992 – DECEMBER 2009
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
SYSTEM PARTITIONING DIAGRAM
Fuse Blow
Detection and
Logic
SMBD
SMBD
SMBC
SMBC
VSS
BAT
VCC
PACK
CHG
DSG
GPOD
PMS
ZVCHG
PFIN
SAFE
Pack +
RBI
Oscillator
Pre Charge FET
& GPOD Drive
N-Channel FET
Drive
Power Mode
Control
AFE HW Control
Watchdog
MSRT
RESET
SMB 1.1
System Control
ALERT
VCELL+
Voltage
Measurement
Cell Balancing
VC1
VC1
VDD
VC2
VC2
OUT
VC3
VC3
CD
VC4
VC4
VC5
ASRN
HW Over
Current &
Short Circuit
Protection
Coloumb
Counter
GSRN
Over Current
Protection
Impedance
Track ™
Gas Gauging
ASRP
Over & Under
Voltage
Protection
TS2
Temperature
Measurement
TOUT
SHA-1
Authentication
Over
Temperature
Protection
TS1
Charging
Algorithm
Cell Voltage
Multiplexer
GSRP
Data Flash
Memory
GND
bq294xx
REG33
Regulators
REG25
bq20z45–R1
Pack RSNS
5 mW - 20 mW typ.
bq20z45-R1
DBT PACKAGE
(TOP VIEW)
DSG
PACK
VCC
ZVCHG
GPOD
PMS
VSS
REG33
TOUT
VCELL+
ALERT
PRES
TS1
TS2
PFIN
SAFE
SMBD
SMBC
NC
2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
CHG
BAT
VC1
VC2
VC3
VC4
VC5
ASRP
ASRN
RESET
VSS
RBI
REG25
VSS
MRST
GSRN
GSRP
VSS
VSS
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Not Recommended For New Designs
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bq20z45-R1
SLUS992 – DECEMBER 2009
PIN FUNCTIONS
PIN
I/O (1)
DESCRIPTION
NO.
NAME
1
DSG
O
2
PACK
IA, P
3
VCC
P
Positive device supply input. Connect to the center connection of the CHG FET and DSG FET to
ensure device supply either from battery stack or battery pack input
4
ZVCHG
O
P-chan pre-charge FET gate drive
5
GPOD
OD
6
PMS
I
Pre-charge mode setting input. Connect to PACK to enable 0v pre-charge using charge FET
connected at CHG pin. Connect to VSS to disable 0V pre-charge using charge FET connected at
CHG pin.
7
VSS
P
Negative device power supply input. Connect all VSS pins together for operation of device
High side N-chan discharge FET gate drive
Battery pack input voltage sense input. It also serves as device wake up when device is in shutdown
mode.
High voltage general purpose open drain output. Can be configured to be used in pre-charge
condition
8
REG33
P
3.3V regulator output. Connect at least a 2.2μF capacitor to REG33 and VSS
9
TOUT
P
Thermistor bias supply output
10
VCELL+
-
Internal cell voltage multiplexer and amplifier output. Connect a 0.1μF capacitor to VCELL+ and VSS
11
ALERT
OD
12
PRES
I
System / Host present input.
13
TS1
IA
Temperature sensor 1 input
14
TS2
IA
15
PFIN
I
16
SAFE
OD
Blow fuse signal output
17
SMBD
I/OD
SMBus data line
18
SMBC
I/OD
19
NC
-
Not connected
20, 21, 25,
28
VSS
P
Negative device power supply input. Connect all VSS pins together for operation of device
22
GSRP
IA
Coulomb counter differential input. Connect to one side of the sense resistor
23
GSRN
IA
Coulomb counter differential input. Connect to one side of the sense resistor
(1)
Alert output. In case of short circuit condition, overload condition and watchdog time out this pin will
be triggered.
Temperature sensor 2 input
Fuse blow detection input
SMBus clock line
24
MRST
I
Reset input for internal CPU core. connect to RESET for correct operation of device
26
REG25
P
2.5V regulator output. Connect at least a 1μF capacitor to REG25 and VSS
27
RBI
P
RAM backup input. Connect a capacitor to this pin and VSS to protect loss of RAM data in case of
short circuit condition
29
RESET
O
Reset output. Connect to MSRT.
30
ASRN
IA
Short circuit and overload detection differential input. Connect to sense resistor
31
ASRP
IA
Short circuit and overload detection differential input. Connect to sense resistor
32
VC5
IA, P
Cell voltage sense input and cell balancing input for the negative voltage of the bottom cell in cell
stack.
33
VC4
IA, P
Cell voltage sense input and cell balancing input for the positive voltage of the bottom cell and the
negative voltage of the second lowest cell in cell stack.
34
VC3
IA, P
Cell voltage sense input and cell balancing input for the positive voltage of the second lowest cell in
cell stack and the negative voltage of the second highest cell in 4 cell applications.
35
VC2
IA, P
Cell voltage sense input and cell balancing input for the positive voltage of the second highest cell
and the negative voltage of the highest cell in 4 cell applications. Connect to VC3 in 2 cell stack
applications
36
VC1
IA, P
Cell voltage sense input and cell balancing input for the positive voltage of the highest cell in cell
stack in 4 cell applications. Connect to VC2 in 3 or 2 cell stack applications
37
BAT
I, P
38
CHG
O
Battery stack voltage sense input
High side N-chan charge FET gate drive
I = Input, IA = Analog input, I/O = Input/output, I/OD = Input/Open-drain output, O = Output, OA = Analog output, P = Power
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bq20z45-R1
Not Recommended For New Designs
SLUS992 – DECEMBER 2009
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ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature (unless otherwise noted)
(1)
PIN
UNIT
BAT, VCC
VSS
Supply voltage range
VIN
Input voltage range
–0.3 V to 34 V
PACK, PMS
–0.3 V to 34 V
VC(n)-VC(n+1); n = 1, 2, 3, 4
–0.3 V to 8.5 V
VC1, VC2, VC3, VC4
–0.3 V to 34 V
VC5
–0.3 V to 1 V
PFIN, SMBD, SMBC
–0.3 V to 6 V
TS1, TS2, SAFE, VCELL+, PRES; ALERT
–0.3 V to V(REG25) + 0.3 V
MRST, GSRN, GSRP, RBI
–0.3 V to V(REG25) + 0.3 V
ASRN, ASRP
–1 V to 1 V
DSG, CHG, GPOD
–0.3 V to 34 V
ZVCHG
VOUT
Output voltage range
–0.3 V to V (BAT)
TOUT, ALERT, REG33
–0.3 V to 6 V
RESET
–0.3 V to 7 V
REG25
–0.3 V to 2.75 V
ISS
Maximum combined sink current for input pins
TA
Operating free-air temperature range
–40°C to 85°C
TF
Functional temperature
–40°C to 100°C
Tstg
Storage temperature range
–65°C to 150°C
(1)
PRES, PFIN, SMBD, SMBC
50 mA
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
PIN
MIN
VSS
Supply voltage
VCC, BAT
4.5
V(STARTUP)
Minimum startup voltage
VCC, BAT, PACK
5.5
VIN
Input Voltage Range
NOM
MAX
UNIT
25
V
V
VC(n)-VC(n+1); n = 1,2,3,4
0
5
V
VC1, VC2, VC3, VC4
0
VSS
V
VC5
0
0.5
V
–0.5
0.5
V
PACK, PMS
0
25
V
0
25
V
1
mA
ASRN, ASRP
V(GPOD)
Output Voltage Range
GPOD
I(GPOD)
Drain Current (1)
GPOD
C(REG25)
2.5V LDO Capacitor
REG25
1
µF
C(REG33)
3.3V LDO Capacitor
REG33
2.2
µF
C(VCELL+)
Cell Voltage Output Capacitor
VCELL+
0.1
µF
R(PACK)
PACK input block resistor (2)
PACK
1
kΩ
(1)
(2)
4
Use an external resistor to limit the current to GPOD to 1mA in high voltage application.
Use an external resistor to limit the inrush current PACK pin required.
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Product Folder Link(s): bq20z45-R1
Not Recommended For New Designs
bq20z45-R1
www.ti.com
SLUS992 – DECEMBER 2009
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted), TA = –40°C to 85°C, V(REG25) = 2.41 V to 2.59 V,
V(BAT) = 14 V, C(REG25) = 1 µF, C(REG33) = 2.2 µF; typical values at TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
I(NORMAL)
Firmware running
I(SLEEP)
Sleep Mode
I(SHUTDOWN)
550
µA
CHG FET on; DSG FET on
124
µA
CHG FET off; DSG FET on
90
µA
CHG FET off; DSG FET off
52
Shutdown Mode
0.1
µA
1
µA
1
µA
1.25
10
mV
V (WAKE) = 1 mV;
I(WAKE)= 0, RSNS1 = 0, RSNS0 = 1;
-0.7
0.7
V(WAKE) = 2.25 mV;
I(WAKE) = 1, RSNS1 = 0, RSNS0 = 1;
I(WAKE) = 0, RSNS1 = 1, RSNS0 = 0;
-0.8
0.8
V(WAKE) = 4.5 mV;
I(WAKE) = 1, RSNS1 = 1, RSNS0 = 1;
I(WAKE) = 0, RSNS1 = 1, RSNS0 = 0;
-1.0
1.0
V(WAKE) = 9 mV;
I(WAKE) = 1, RSNS1 = 1, RSNS0 = 1;
-1.4
1.4
SHUTDOWN WAKE; TA = 25°C (unless otherwise noted)
I(PACK)
Shutdown exit at VSTARTUP
threshold
SRx WAKE FROM SLEEP; TA = 25°C (unless otherwise noted)
V(WAKE)
V(WAKE_ACR)
Positive or negative wake
threshold with 1.00 mV, 2.25
mV, 4.5 mV and 9 mV
programmable options
Accuracy of V(WAKE)
V(WAKE_TCO)
Temperature drift of V(WAKE)
accuracy
t(WAKE)
Time from application of current
and wake of bq20z45-R1
mV
0.5
%/°C
1
10
ms
1.70
1.80
1.90
V
50
150
250
mV
100
250
560
µs
250
500
1000
ms
50
100
150
µs
2.41
2.5
2.59
V
POWER-ON RESET
VIT–
Negative-going voltage input
Voltage at REG25 pin
Vhys
Hysteresis
VIT+ – VIT-
tRST
RESET active low time
active low time after power up or watchdog reset
WATCHDOG TIMER
tWDTINT
Watchdog start up detect time
tWDWT
Watchdog detect time
2.5V LDO; I(REG33OUT) = 0 mA; TA = 25°C (unless otherwise noted)
V(REG25)
Regulator output voltage
4.5 < VCC or BAT < 25 V;
I(REG25OUT) ≤ 16 mA;
TA = –40°C to 100°C
ΔV(REG25TEMP)
Regulator output change with
temperature
I(REG25OUT) = 2 mA;
TA = –40°C to 100°C
ΔV(REG25LINE)
Line regulation
5.4 < VCC or BAT < 25 V;
I(REG25OUT) = 2 mA
ΔV(REG25LOAD)
Load Regulation
I(REG25MAX)
Current Limit
±0.2
3
%
10
mV
0.2 mA ≤ I(REG25OUT) ≤ 2 mA
7
25
0.2 mA ≤ I(REG25OUT) ≤ 16 mA
25
50
5
40
75
mA
3
3.3
3.6
V
drawing current until
REG25 = 2 V to 0 V
mV
3.3V LDO; I(REG25OUT) = 0 mA; TA = 25°C (unless otherwise noted)
V(REG33)
Regulator output voltage
4.5 < VCC or BAT < 25 V;
I(REG33OUT) ≤ 25 mA;
TA = –40°C to 100°C
ΔV(REG33TEMP)
Regulator output change with
temperature
I(REG33OUT) = 2 mA;
TA = –40°C to 100°C
ΔV(REG33LINE)
Line regulation
5.4 < VCC or BAT < 25 V;
I(REG33OUT) = 2 mA
±0.2
3
%
10
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5
bq20z45-R1
Not Recommended For New Designs
SLUS992 – DECEMBER 2009
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ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range (unless otherwise noted), TA = –40°C to 85°C, V(REG25) = 2.41 V to 2.59 V,
V(BAT) = 14 V, C(REG25) = 1 µF, C(REG33) = 2.2 µF; typical values at TA = 25°C (unless otherwise noted)
PARAMETER
ΔV(REG33LOAD)
Load Regulation
I(REG33MAX)
Current Limit
TYP
MAX
0.2 mA ≤ I(REG33OUT) ≤ 2 mA
TEST CONDITIONS
MIN
7
17
0.2mA ≤ I(REG33OUT) ≤ 25 mA
40
100
100
145
drawing current until REG33 = 3 V
25
short REG33 to VSS, REG33 = 0 V
12
65
UNIT
mV
mA
THERMISTOR DRIVE
V(TOUT)
RDS(on)
Output voltage
I(TOUT) = 0 mA; TA = 25°C
TOUT pass element resistance
I(TOUT) = 1 mA; RDS(on) = (V(REG25) - V(TOUT) )/ 1 mA; TA =
–40°C to 100°C
V(REG25)
V
50
100
Ω
VCELL+ HIGH VOLTAGE TRANSLATION
V(VCELL+OUT)
V(VCELL+REF)
Translation output
VC(n) - VC(n+1) = 0 V;
TA = –40°C to 100°C
0.950
0.975
1
VC(n) - VC(n+1) = 4.5 V;
TA = –40°C to 100°C
0.275
0.3
0.375
internal AFE reference voltage ;
TA = –40°C to 100°C
0.965
0.975
0.985
V(VCELL+PACK)
Voltage at PACK pin;
TA = –40°C to 100°C
0.98 ×
V(PACK)/18
V(PACK)/18
1.02 ×
V(PACK)/18
V(VCELL+BAT)
Voltage at BAT pin;
TA = –40°C to 100°C
0.98 ×
V(BAT)/18
V(BAT)/18
1.02 ×
V(BAT)/18
CMMR
Common mode rejection ratio
K
Cell scale factor
VCELL+
40
V
dB
K= {VCELL+ output (VC5=0V; VC4=4.5V) - VCELL+
output (VC5=0V; VC4=0V)}/4.5
0.147
0.150
0.153
K= {VCELL+ output (VC2=13.5V; VC1=18V) - VCELL+
output
(VC5=13.5V; VC1=13.5V)}/4.5
0.147
0.150
0.153
12
18
-18
-1
18
mV
-1
0.01
1
μA
200
400
600
Ω
I(VCELL+OUT)
Drive Current to VCELL+
capacitor
VC(n) - VC(n+1) = 0V; VCELL+ = 0 V;
TA = –40°C to 100°C
V(VCELL+O)
CELL offset error
CELL output (VC2 = VC1 = 18 V) - CELL output (VC2 =
VC1 = 0 V)
IVCnL
VC(n) pin leakage current
VC1, VC2, VC3, VC4, VC5 = 3 V
μA
CELL BALANCING
internal cell balancing FET
resistance
R(BAL)
RDS(on) for internal FET switch at
VDS = 2 V; TA = 25°C
HARDWARE SHORT CIRCUIT AND OVERLOAD PROTECTION; TA = 25°C (unless otherwise noted)
OL detection threshold voltage
accuracy
V(OL)
VOL = 25 mV (min)
15
25
35
VOL = 100 mV; RSNS = 0, 1
90
100
110
185
205
225
VOL = 205 mV (max)
V(SCC) = 50 mV (min)
SCC detection threshold
voltage accuracy
V(SCC)
30
50
70
V(SCC) = 200 mV; RSNS = 0, 1
180
200
220
V(SCC) = 475 mV (max)
428
475
523
V(SCD) = –50 mV (min)
SCD detection threshold
voltage accuracy
V(SCD)
tda
Delay time accuracy
tpd
Protection circuit propagation
delay
–30
–50
–70
V(SCD) = –200 mV; RSNS = 0, 1
–180
–200
–220
V(SCD) = –475 mV (max)
–428
–475
–523
mV
mV
mV
±15.25
μs
50
μs
FET DRIVE CIRCUIT; TA = 25°C (unless otherwise noted)
V(DSGON)
DSG pin output on voltage
V(DSGON) = V(DSG) - V(PACK);
V(GS) connect to 10 MΩ; DSG and CHG on;
TA = –40°C to 100°C
8
12
16
V
V(CHGON)
CHG pin output on voltage
V(CHGON) = V(CHG) - V(BAT);
V(GS) = 10 MΩ; DSG and CHG on;
TA = –40°C to 100°C
8
12
16
V
V(DSGOFF)
DSG pin output off voltage
V(DSGOFF) = V(DSG) - V(PACK)
0.2
V
V(CHGOFF)
CHG pin output off voltage
V(CHGOFF) = V(CHG) - V(BAT)
0.2
V
6
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SLUS992 – DECEMBER 2009
ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range (unless otherwise noted), TA = –40°C to 85°C, V(REG25) = 2.41 V to 2.59 V,
V(BAT) = 14 V, C(REG25) = 1 µF, C(REG33) = 2.2 µF; typical values at TA = 25°C (unless otherwise noted)
PARAMETER
TYP
MAX
V(CHG): V(PACK) ≥ V(PACK) + 4V
TEST CONDITIONS
400
1000
V(DSG): V(BAT) ≥ V(BAT) + 4V
400
1000
V(CHG): V(PACK) + V(CHGON) ≥ V(PACK)
+ 1V
40
200
V(DSG): VC1 + V(DSGON) ≥ VC1 + 1V
40
200
3.3
3.5
3.7
ALERT
60
100
200
RESET
1
3
6
tr
Rise time
CL= 4700 pF
tf
Fall time
CL= 4700pF
V(ZVCHG)
ZVCHG clamp voltage
BAT = 4.5 V
MIN
UNIT
μs
μs
V
LOGIC; TA = –40°C to 100°C (unless otherwise noted)
R(PULLUP)
Internal pullup resistance
VOL
Logic low output voltage level
ALERT
0.2
RESET; V(BAT) = 7V; V(REG25) = 1.5 V; I (RESET) = 200 μA
0.4
GPOD; I(GPOD) = 50 μA
0.6
kΩ
V
LOGIC SMBC, SMBD, PFIN, PRES, SAFE, ALERT
VIH
High-level input voltage
VIL
Low-level input voltage
VOH
Output voltage high (1)
IL = –0.5 mA
VOL
Low-level output voltage
PRES, PFIN, ALERT, IL = 7 mA;
CI
Input capacitance
I(SAFE)
Ilkg
2.0
V
0.8
V
VREG25–0.5
V
0.4
V
5
SAFE source currents
SAFE active, SAFE = V(REG25) –0.6 V
SAFE leakage current
SAFE inactive
pF
–3
mA
–0.2
Input leakage current
0.2
µA
1
µA
ADC (2)
Input voltage range
TS1, TS2, using Internal Vref
–0.2
Conversion time
1
V
31.5
Resolution (no missing codes)
16
Effective resolution
14
bits
15
Integral nonlinearity
bits
±0.03
Offset error (4)
Offset error drift (4)
ms
TA = 25°C to 85°C
Full-scale error (5)
Full-scale error drift
140
250
µV
2.5
18
μV/°C
±0.1%
±0.7%
50
Effective input resistance (6)
%FSR (3)
PPM/°C
8
MΩ
COULOMB COUNTER
Input voltage range
–0.20
Conversion time
Single conversion
Effective resolution
Single conversion
Integral nonlinearity
Offset error
(7)
±0.007
±0.007
(9)
(7)
(8)
(9)
±0.034
%FSR
10
0.4
µV
0.7
µV/°C
±0.35%
Full-scale error drift
(1)
(2)
(3)
(4)
(5)
(6)
bits
–0.20 V to –0.1 V
TA = 25°C to 85°C
V
ms
15
–0.1 V to 0.20 V
Offset error drift
Full-scale error (8)
0.20
250
150
PPM/°C
RC[0:7] bus
Unless otherwise specified, the specification limits are valid at all measurement speed modes
Full-scale reference
Post-calibration performance and no I/O changes during conversion with SRN as the ground reference
Uncalibrated performance. This gain error can be eliminated with external calibration.
The A/D input is a switched-capacitor input. Since the input is switched, the effective input resistance is a measure of the average
resistance.
Post-calibration performance
Reference voltage for the coulomb counter is typically Vref/3.969 at V(REG25) = 2.5 V, TA = 25°C.
Uncalibrated performance. This gain error can be eliminated with external calibration.
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ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range (unless otherwise noted), TA = –40°C to 85°C, V(REG25) = 2.41 V to 2.59 V,
V(BAT) = 14 V, C(REG25) = 1 µF, C(REG33) = 2.2 µF; typical values at TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Effective input resistance (10)
TA = 25°C to 85°C
MIN
TYP
MAX
UNIT
2.5
MΩ
INTERNAL TEMPERATURE SENSOR
V(TEMP)
Temperature sensor voltage (11)
-2.0
mV/°C
VOLTAGE REFERENCE
Output voltage
1.215
Output voltage drift
1.225
1.230
65
V
PPM/°C
HIGH FREQUENCY OSCILLATOR
f(OSC)
Operating frequency
f(EIO)
Frequency error
t(SXO)
Start-up time (14)
4.194
(12) (13)
TA = 20°C to 70°C
MHz
–3%
0.25%
3%
–2%
0.25%
2%
2.5
5
ms
LOW FREQUENCY OSCILLATOR
f(LOSC)
f(LEIO)
t(LSXO)
Operating frequency
Frequency error (13)
Start-up time
32.768
(15)
TA = 20°C to 70°C
(14)
kHz
–2.5%
0.25%
2.5%
–1.5%
0.25%
1.5%
500
µs
(10) The CC input is a switched capacitor input. Since the input is switched, the effective input resistance is a measure of the average
resistance.
(11) –53.7 LSB/°C
(12) The frequency error is measured from 4.194 MHz.
(13) The frequency drift is included and measured from the trimmed frequency at V(REG25) = 2.5V, TA = 25°C
(14) The startup time is defined as the time it takes for the oscillator output frequency to be ±3%
(15) The frequency error is measured from 32.768 kHz.
8
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DATA FLASH CHARACTERISTICS OVER RECOMMENDED OPERATING TEMPERATURE AND
SUPPLY VOLTAGE
Typical Values at TA = 25°C and V(REG25) = 2.5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
Data retention
Flash programming write-cycles
t(ROWPROG)
Row programming time
See
TYP MAX
UNIT
10
Years
20k
Cycles
(1)
t(MASSERASE) Mass-erase time
t(PAGEERASE) Page-erase time
2
ms
200
ms
20
ms
I(DDPROG)
Flash-write supply current
5
10
mA
I(DDERASE)
Flash-erase supply current
5
10
mA
RAM BACKUP
I(RB)
RB data-retention input current
V(RB)
RB data-retention input voltage (1)
(1)
V(RBI) > V(RBI)MIN , VREG25 < VIT–, TA = 85°C
1000 2500
V(RBI) > V(RBI)MIN , VREG25 < VIT–, TA = 25°C
90
220
1.7
nA
V
Specified by design. Not production tested.
SMBus TIMING CHARACTERISTICS
TA = –40°C to 85°C Typical Values at TA = 25°C and VREG25 = 2.5 V (Unless Otherwise Noted)
PARAMETER
f(SMB)
TEST CONDITIONS
MIN
SMBus operating frequency
Slave mode, SMBC 50% duty cycle
f(MAS)
SMBus master clock frequency
Master mode, No clock low slave
extend
t(BUF)
Bus free time between start and stop
(see Figure 1)
t(HD:STA)
Hold time after (repeated) start (see Figure 1)
t(SU:STA)
Repeated start setup time (see Figure 1)
t(SU:STO)
Stop setup time (see Figure 1)
t(HD:DAT)
Data hold time (see Figure 1)
t(SU:DAT)
Data setup time (see Figure 1)
t(TIMEOUT)
Error signal/detect (see Figure 1)
t(LOW)
Clock low period (see Figure 1)
TYP
10
MAX
UNIT
100
kHz
51.2
kHz
4.7
µs
4
µs
4.7
µs
4
µs
Receive mode
0
ns
Transmit mode
300
250
See
(1)
25
ns
35
4.7
µs
µs
t(HIGH)
Clock high period (see Figure 1)
See
(2)
50
µs
t(LOW:SEXT)
Cumulative clock low slave extend time
See
(3)
25
ms
t(LOW:MEXT)
Cumulative clock low master extend time
(see Figure 1)
See
(4)
10
ms
tf
Clock/data fall time
See
(5)
300
ns
tr
Clock/data rise time
See
(6)
1000
ns
(1)
(2)
(3)
(4)
(5)
(6)
4
The bq20z45-R1 times out when any clock low exceeds t(TIMEOUT).
t(HIGH), Max, is the minimum bus idle time. SMBC = SMBD = 1 for t > 50 ms causes reset of any transaction involving bq20z45-R1 that
is in progress. This specification is valid when the NC_SMB control bit remains in the default cleared state (CLK[0]=0).
t(LOW:SEXT) is the cumulative time a slave device is allowed to extend the clock cycles in one message from initial start to the stop.
t(LOW:MEXT) is the cumulative time a master device is allowed to extend the clock cycles in one message from initial start to the stop.
Rise time tr = VILMAX – 0.15) to (VIHMIN + 0.15)
Fall time tf = 0.9VDD to (VILMAX – 0.15)
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TLOW
SCLK
TR
THD:STA
THD:STA
TF
THIGH
THD:DAT
TSU:STA
TSU:STO
TSU:DAT
SDATA
TBUF
P
S
S
P
Start
Stop
TLOW:SEXT
SCLKACK†
SCLKACK†
TLOW:MEXT
TLOW:MEXT
TLOW:MEXT
SCLK
SDATA
A.
SCLKACK is the acknowledge-related clock pulse generated by the master.
Figure 1. SMBus Timing Diagram
10
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FEATURE SET
Primary (1st Level) Safety Features
The bq20z45-R1 supports a wide range of battery and system protection features that can easily be configured.
The primary safety features include:
•
•
•
•
•
Cell over/undervoltage protection
Charge and discharge overcurrent
Short Circuit
Charge and discharge overtemperature with independent alarms and thresholds for each thermistor
AFE Watchdog
Secondary (2nd Level) Safety Features
The secondary safety features of the bq20z45-R1 can be used to indicate more serious faults via the SAFE (pin
7). This pin can be used to blow an in-line fuse to permanently disable the battery pack from charging or
discharging. The secondary safety protection features include:
•
•
•
•
•
•
•
•
•
Safety overvoltage
Safety undervoltage
Safety overcurrent in charge and discharge
Safety overtemperature in charge and discharge with independent alarms and thresholds for each thermistor
Charge FET and 0 Volt Charge FET fault
Discharge FET fault
Cell imbalance detection (active and at rest)
Open thermistor detection
AFE communication fault
Charge Control Features
The bq20z45-R1 charge control features include:
•
•
•
•
•
•
•
Supports JEITA temperature ranges. Reports charging voltage and charging current according to the active
temperature range.
Handles more complex charging profiles. Allows for splitting the standard temperature range into 2
sub-ranges and allows for varying the charging current according to the cell voltage.
Reports the appropriate charging current needed for constant current charging and the appropriate charging
voltage needed for constant voltage charging to a smart charger using SMBus broadcasts.
Determines the chemical state of charge of each battery cell using Impedance Track™ and can reduce the
charge difference of the battery cells in fully charged state of the battery pack gradually using cell balancing
algorithm during charging. This prevents fully charged cells from overcharging and causing excessive
degradation and also increases the usable pack energy by preventing premature charge termination
Supports pre-charging/zero-volt charging
Supports charge inhibit and charge suspend if battery pack temperature is out of temperature range
Reports charging fault and also indicate charge status via charge and discharge alarms.
Gas Gauging
The bq20z45-R1 uses the Impedance Track™ Technology to measure and calculate the available charge in
battery cells. The achievable accuracy is better than 1% error over the lifetime of the battery and there is no full
charge discharge learning cycle required.
See Theory and Implementation of Impedance Track Battery Fuel-Gauging Algorithm application note (SLUA364)
for further details.
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Lifetime Data Logging Features
The bq20z45-R1 offers lifetime data logging, where important measurements are stored for warranty and
analysis purposes. The data monitored include:
• Lifetime maximum temperature
• Lifetime minimum temperature
• Lifetime maximum battery cell voltage
• Lifetime minimum battery cell voltage
• Lifetime maximum battery pack voltage
• Lifetime minimum battery pack voltage
• Lifetime maximum charge current
• Lifetime maximum discharge current
• Lifetime maximum charge power
• Lifetime maximum discharge power
• Lifetime maximum average discharge current
• Lifetime maximum average discharge power
• Lifetime average temperature
Authentication
The bq20z45-R1 supports authentication by the host using SHA-1.
Power Modes
The bq20z45-R1 supports 3 different power modes to reduce power consumption:
•
•
•
In Normal Mode, the bq20z45-R1 performs measurements, calculations, protection decisions and data
updates in 1 second intervals. Between these intervals, the bq20z45-R1 is in a reduced power stage.
In Sleep Mode, the bq20z45-R1 performs measurements, calculations, protection decisions and data update
in adjustable time intervals. Between these intervals, the bq20z45-R1 is in a reduced power stage. The
bq20z45-R1 has a wake function that enables exit from Sleep mode, when current flow or failure is detected.
In Shutdown Mode the bq20z45-R1 is completely disabled.
CONFIGURATION
Oscillator Function
The bq20z45-R1 fully integrates the system oscillators. Therefore the bq20z45-R1 requires no external
components for this feature.
System Present Operation
The bq20z45-R1 checks the PRES pin periodically (1s). If PRES input is pulled to ground by external system, the
bq20z45-R1 detects this as system present.
BATTERY PARAMETER MEASUREMENTS
The bq20z45-R1 uses an integrating delta-sigma analog-to-digital converter (ADC) for current measurement, and
a second delta-sigma ADC for individual cell and battery voltage, and temperature measurement.
Charge and Discharge Counting
The integrating delta-sigma ADC measures the charge/discharge flow of the battery by measuring the voltage
drop across a small-value sense resistor between the SR1 and SR2 pins. The integrating ADC measures bipolar
signals from -0.25 V to 0.25 V. The bq20z45-R1 detects charge activity when VSR = V(SRP)- V(SRN)is positive and
discharge activity when VSR = V(SRP) - V(SRN) is negative. The bq20z45-R1 continuously integrates the signal over
time, using an internal counter. The fundamental rate of the counter is 0.65 nVh.
12
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Voltage
The bq20z45-R1 updates the individual series cell voltages at one second intervals. The internal ADC of the
bq20z45-R1 measures the voltage, scales and calibrates it appropriately. This data is also used to calculate the
impedance of the cell for the Impedance Track™ gas-gauging.
Current
The bq20z45-R1 uses the SRP and SRN inputs to measure and calculate the battery charge and discharge
current using a 5 mΩ to 20 mΩ typ. sense resistor.
Auto Calibration
The bq20z45-R1 provides an auto-calibration feature to cancel the voltage offset error across SRN and SRP for
maximum charge measurement accuracy. The bq20z45-R1 performs auto-calibration when the SMBus lines stay
low continuously for a minimum of 5 s.
Temperature
The bq20z45-R1 has an internal temperature sensor and inputs for 2 external temperature sensor inputs TS1
and TS2 used in conjunction with two identical NTC thermistors (default are Semitec 103AT) to sense the battery
environmental temperature. The bq20z45-R1 can be configured to use internal or up to 2 external temperature
sensors.
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COMMUNICATIONS
The bq20z45-R1 uses SMBus v1.1 with Master Mode and package error checking (PEC) options per the SBS
specification.
SMBus On and Off State
The bq20z45-R1 detects an SMBus off state when SMBC and SMBD are logic-low for ≥ 2 seconds. Clearing this
state requires either SMBC or SMBD to transition high. Within 1 ms, the communication bus is available.
SBS Commands
Table 2. SBS COMMANDS
SBS
Cmd
Mode
Name
Format
Size in
Bytes
Min
Value
Max
Value
Default Value
Unit
0x00
R/W
ManufacturerAccess
hex
2
0x0000
0xffff
—
—
0x01
R/W
RemainingCapacityAlarm
unsigned int
2
0
65535
300
mAh or 10mWh
0x02
R/W
RemainingTimeAlarm
unsigned int
2
0
65535
10
min
0x03
R/W
BatteryMode
hex
2
0x0000
0xe383
—
—
0x04
R/W
AtRate
signed int
2
–32768
32767
—
mA or 10mW
0x05
R
AtRateTimeToFull
unsigned int
2
0
65534
—
min
0x06
R
AtRateTimeToEmpty
unsigned int
2
0
65534
—
min
0x07
R
AtRateOK
unsigned int
2
0
65535
—
—
0x08
R
Temperature
unsigned int
2
0
65535
—
0.1°K
0x09
R
Voltage
unsigned int
2
0
65535
—
mV
0x0a
R
Current
signed int
2
–32768
32767
—
mA
0x0b
R
AverageCurrent
signed int
2
–32768
32767
—
mA
0x0c
R
MaxError
unsigned int
1
0
100
—
%
0x0d
R
RelativeStateOfCharge
unsigned int
1
0
100
—
%
0x0e
R
AbsoluteStateOfCharge
unsigned int
1
0
100+
—
%
0x0f
R/W
RemainingCapacity
unsigned int
2
0
65535
—
mAh or 10mWh
0x10
R
FullChargeCapacity
unsigned int
2
0
65535
—
mAh or 10mWh
0x11
R
RunTimeToEmpty
unsigned int
2
0
65534
—
min
0x12
R
AverageTimeToEmpty
unsigned int
2
0
65534
—
min
0x13
R
AverageTimeToFull
unsigned int
2
0
65534
—
min
0x14
R
ChargingCurrent
unsigned int
2
0
65534
—
mA
0x15
R
ChargingVoltage
unsigned int
2
0
65534
—
mV
0x16
R
BatteryStatus
unsigned int
2
0x0000
0xffff
—
—
0x17
R/W
CycleCount
unsigned int
2
0
65535
—
—
0x18
R/W
DesignCapacity
unsigned int
2
0
65535
4400
mAh or 10mWh
0x19
R/W
DesignVoltage
unsigned int
2
7000
16000
14400
mV
0x1a
R/W
SpecificationInfo
unsigned int
2
0x0000
0xffff
0x0031
—
0x1b
R/W
ManufactureDate
unsigned int
2
0
65535
01-Jan-1980
—
0x1c
R/W
SerialNumber
hex
2
0x0000
0xffff
0x0001
—
0x20
R/W
ManufacturerName
String
20+1
—
—
Texas Inst.
—
0x21
R/W
DeviceName
String
20+1
—
—
bq20z45-R1
—
0x22
R/W
DeviceChemistry
String
4+1
—
—
LION
—
0x23
R
ManufacturerData
String
14+1
—
—
—
—
0x2f
R/W
Authenticate
String
20+1
—
—
—
—
0x3c
R
CellVoltage4
unsigned int
2
0
65535
—
mV
0x3d
R
CellVoltage3
unsigned int
2
0
65535
—
mV
0x3e
R
CellVoltage2
unsigned int
2
0
65535
—
mV
0x3f
R
CellVoltage1
unsigned int
2
0
65535
—
mV
14
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Table 3. EXTENDED SBS COMMANDS
SBS Cmd
Mode
Name
Format
Size in
Bytes
Min Value
Max Value
Default
Value
Unit
—
0x45
R
AFEData
String
11+1
—
—
—
0x46
R/W
FETControl
hex
2
0x00
0xff
—
—
0x4f
R
StateOfHealth
hex
2
0x0000
0xffff
—
%
0x51
R
SafetyStatus
hex
2
0x0000
0xffff
—
—
0x53
R
PFStatus
hex
2
0x0000
0xffff
—
—
0x54
R
OperationStatus
hex
2
0x0000
0xffff
—
—
0x55
R
ChargingStatus
hex
2
0x0000
0xffff
—
—
0x57
R
ResetData
hex
2
0x0000
0xffff
—
—
0x58
R
WDResetData
unsigned int
2
0
65535
—
—
0x5a
R
PackVoltage
unsigned int
2
0
65535
—
mV
0x5d
R
AverageVoltage
unsigned int
2
0
65535
—
mV
0x5e
R
TS1Temperature
integer
2
–400
1200
—
0.1°C
0x5f
R
TS2Temperature
integer
2
–400
1200
—
0.1°C
0x60
R/W
UnSealKey
hex
4
0x00000000
0xffffffff
—
—
0x61
R/W
FullAccessKey
hex
4
0x00000000
0xffffffff
—
—
0x62
R/W
PFKey
hex
4
0x00000000
0xffffffff
—
—
0x63
R/W
AuthenKey3
hex
4
0x00000000
0xffffffff
—
—
0x64
R/W
AuthenKey2
hex
4
0x00000000
0xffffffff
—
—
0x65
R/W
AuthenKey1
hex
4
0x00000000
0xffffffff
—
—
0x66
R/W
AuthenKey0
hex
4
0x00000000
0xffffffff
—
—
0x69
R
SafetyStatus2
hex
2
0x0000
0x000f
—
—
0x6b
R
PFStatus2
hex
2
0x0000
0x000f
—
—
0x6c
R/W
ManufBlock1
String
20
—
—
—
—
0x6d
R/W
ManufBlock2
String
20
—
—
—
—
0x6e
R/W
ManufBlock3
String
20
—
—
—
—
0x6f
R/W
ManufBlock4
String
20
—
—
—
—
0x70
R/W
ManufacturerInfo
String
31+1
—
—
—
—
0x71
R/W
SenseResistor
unsigned int
2
0
65535
—
μΩ
0x72
R
TempRange
hex
2
0x0000
0xffff
—
—
0x73
R
LifetimeData
String
32+1
—
—
—
—
0x77
R/W
DataFlashSubClassID
hex
2
0x0000
0xffff
—
—
0x78
R/W
DataFlashSubClassPage1
hex
32
—
—
—
—
0x79
R/W
DataFlashSubClassPage2
hex
32
—
—
—
—
0x7a
R/W
DataFlashSubClassPage3
hex
32
—
—
—
—
0x7b
R/W
DataFlashSubClassPage4
hex
32
—
—
—
—
0x7c
R/W
DataFlashSubClassPage5
hex
32
—
—
—
—
0x7d
R/W
DataFlashSubClassPage6
hex
32
—
—
—
—
0x7e
R/W
DataFlashSubClassPage7
hex
32
—
—
—
—
0x7f
R/W
DataFlashSubClassPage8
hex
32
—
—
—
—
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APPLICATION SCHEMATIC
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
BQ20Z45DBT-R1
NRND
TSSOP
DBT
38
50
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
20Z45
BQ20Z45DBTR-R1
NRND
TSSOP
DBT
38
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
20Z45
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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